Semiconductor devices

Abstract

The semiconductor device (1) of the present invention comprises a mounting substrate (10), a cured silicone resin film (20) in contact with the mounting substrate (10), and a first cured silicone resin (30) in contact with the cured silicone resin film (20). In the semiconductor device (1), the oxygen content per unit volume of the cured silicone resin film (20) in the entire thickness direction is greater than the oxygen content per unit volume of the first cured silicone resin (30).

Description

Technical Field

[0001] The present application relates to a semiconductor device. Background Art

[0002] In the past, semiconductor devices having an LED (light emitting diode) packaging structure in which a light-transmitting member is bonded to a light-emitting element via a light-guiding member have been used as semiconductor devices. For example, Patent Document 1 discloses a light-emitting device having a light-emitting element mounted on a substrate, a light-transmitting member on the upper side of the light-emitting element, a light-guiding member for bonding the light-emitting element to the light-transmitting member, and a covering member covering the surface of the substrate, the light-emitting element, the light-transmitting member, and the light-guiding member. The light-guiding member and the covering member are composed of resin members such as a cured silicone resin, for example.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2010-219324 Summary of the invention

[0006] Problems to be solved by the invention

[0007] Semiconductor devices are required to suppress peeling of components of the semiconductor device and resin components such as cured silicone resin covering the components. Therefore, an object of the present application is to provide a semiconductor device capable of suppressing peeling of cured silicone resin covering components of the semiconductor device.

[0008] Means for solving problems

[0009] In order to achieve the above-mentioned purpose, one scheme of the semiconductor device of the present application comprises a substrate, a silicone resin cured material film in contact with the above-mentioned substrate, and a first silicone resin cured material in contact with the above-mentioned silicone resin cured material film, wherein the oxygen content per unit volume of the above-mentioned silicone resin cured material film in the entire thickness direction is greater than the oxygen content per unit volume of the above-mentioned first silicone resin cured material.

[0010] Effects of the Invention

[0011] According to the present application, it is possible to suppress peeling of the cured silicone resin covering a member of a semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a top view showing the structure of the semiconductor device according to the first embodiment.

[0013] Figure 2 yes Figure 1Cross-sectional view along line II-II.

[0014] Figure 3 This is a flowchart for explaining the method for manufacturing the semiconductor device according to the first embodiment.

[0015] Figure 4 It is a top view for explaining the step of preparing a mounting substrate in the manufacturing process of the semiconductor device according to the first embodiment.

[0016] Figure 5 This is a top view for explaining the step of mounting the light emitting element in the manufacturing process of the semiconductor device according to the first embodiment.

[0017] Figure 6 This is a top view for explaining the step of applying an adhesive in the manufacturing process of the semiconductor device according to the first embodiment.

[0018] Figure 7 This is a cross-sectional view for explaining the step of pressing the light-transmitting member from above the adhesive in the manufacturing process of the semiconductor device according to the first embodiment.

[0019] Fig. 8A This is another cross-sectional view for explaining the step of pressing the light-transmitting member from above the adhesive in the manufacturing process of the semiconductor device according to the first embodiment.

[0020] Figure 8B This is another cross-sectional view for explaining the step of pressing the light-transmitting member from above the adhesive in the manufacturing process of the semiconductor device according to the first embodiment.

[0021] Figure 8C This is still another cross-sectional view for explaining the step of pressing the light-transmitting member from above the adhesive in the manufacturing process of the semiconductor device according to the first embodiment.

[0022] Fig. 9A This is a cross-sectional view for explaining the step of curing the adhesive in the manufacturing process of the semiconductor device according to the first embodiment.

[0023] Fig. 9B This is a top view for explaining the step of curing the adhesive in the manufacturing process of the semiconductor device according to the first embodiment.

[0024] Fig.10 This is a diagram showing an example of the relationship between the distance from the silicone resin and the thickness of the formed scattered film.

[0025] Fig.11 It is a top view for explaining the step of forming a dam in the manufacturing process of the semiconductor device according to the first embodiment.

[0026] Fig.12 yes Fig.11Cross-sectional view along line XII-XII.

[0027] Fig.13 This is a top view for explaining the step of filling and curing the material for forming the reflective member in the manufacturing process of the semiconductor device according to the first embodiment.

[0028] Fig.14 yes Fig.13 Cross-sectional view along line XIV-XIV.

[0029] Fig.15 It is a top view for explaining the step of singulating the semiconductor device in the manufacturing process of the semiconductor device according to the first embodiment.

[0030] Fig.16 This is a graph showing the detected amount of fragment ions of the cured silicone resin thin film according to the first embodiment.

[0031] Fig.17 It is a graph showing the relationship between the cumulative light amount of UV light and the ratio of the detected amount of SiO2-based fragment ions.

[0032] Fig.18 It is a cross-sectional view showing the structure of a semiconductor device according to a second embodiment.

[0033] Fig.19 This is a cross-sectional view for explaining the step of irradiating UV light in the manufacturing process of the semiconductor device according to the second embodiment.

[0034] Fig. 20 It is a cross-sectional view showing the structure of a semiconductor device according to a third embodiment.

[0035] Fig.21 This is a flowchart for explaining a method for manufacturing a semiconductor device according to a third embodiment.

[0036] Fig. 22 It is a cross-sectional view for explaining the first UV light irradiation step in the manufacturing process of the semiconductor device according to the third embodiment.

[0037] Fig.23 It is a cross-sectional view for explaining the step of forming a dam in the manufacturing process of the third embodiment.

[0038] Fig.24 It is a cross-sectional view for explaining the step of curing the dam material in the manufacturing process of the semiconductor device according to the third embodiment.

[0039] Fig.25 It is a cross-sectional view for explaining the second UV light irradiation step in the manufacturing process of the semiconductor device according to the third embodiment. DETAILED DESCRIPTION

[0040] (As to the origin of the solution of this application)

[0041] First, before describing the implementation mode of the present application, the background leading to one aspect of the present application will be described.

[0042] Generally, an LED package using a silicone resin is manufactured as disclosed in Patent Document 1. In addition, in this specification, "silicone resin" means a liquid silicone resin before curing unless otherwise specified.

[0043] The inventors have found that, in this production method, when the silicone resin is thermally cured, a portion of the silicone resin evaporates and scatters before curing, forming a scattering film of the silicone resin cured product on nearby components. Furthermore, it has been found that the adhesion between components such as mounting substrates on which a thin film of the silicone resin cured product is formed and the silicone resin cured product covering each component is reduced.

[0044] Therefore, an object of the present application is to provide a semiconductor device capable of suppressing peeling of a cured silicone resin covering a member of the semiconductor device even when a cured silicone resin film is formed on the member of the semiconductor device.

[0045] Hereinafter, the embodiments of the present application will be described with reference to the accompanying drawings. It should be noted that the embodiments described below are all specific examples of the present application. Therefore, the numerical values, shapes, materials, constituent elements, the configuration positions and connection forms of the constituent elements, and the steps (processes) and the order of the steps shown in the following embodiments are examples, and the subject matter does not limit the present application.

[0046] In addition, each figure is a schematic diagram and is not necessarily a strict illustration. Therefore, the scales and the like in each figure are not necessarily the same. In each figure, the same reference numerals are given to substantially the same components, and repeated descriptions are omitted or simplified.

[0047] In addition, in the following embodiments, the terms "upper side" and "lower side" do not refer to the upper direction (vertical upper side) and the lower direction (vertical lower side) in absolute spatial cognition. In addition, the terms "upper side" and "lower side" are applicable not only to the case where two components are arranged with a gap between them and there is another component between them, but also to the case where two components are arranged closely to each other and the two components are in contact.

[0048] (Implementation Method 1)

[0049] The semiconductor device according to the first embodiment will be described.

[0050] [Overall composition]

[0051] First, the overall structure of the semiconductor device 1 according to the first embodiment is described using Figure 1 and Figure 2 Provide explanation. Figure 1 It is a top view showing the structure of the semiconductor device 1 according to the first embodiment. Figure 2 yes Figure 1 Cross-sectional view along line II-II.

[0052] like Figure 1 and Figure 2 As shown in , the semiconductor device 1 includes a mounting substrate 10 having a conductive pattern 11 formed thereon, a cured silicone resin film 20, a first cured silicone resin 30, a light emitting element 40, a light-transmitting member 50, a second cured silicone resin 60, and a third cured silicone resin 70. In the present embodiment, the semiconductor device 1 is a light emitting device in which the light emitting element 40 is mounted on the mounting substrate 10.

[0053] The mounting substrate 10 is, for example, a ceramic substrate composed of a sintered body of AlN. In the present embodiment, the mounting substrate 10 is an example of a base. The mounting substrate 10 may also be a metal substrate or a resin substrate. The conductive pattern 11 is a conductive layer formed on the mounting substrate 10 and electrically connected to the light emitting element 40, and is formed of, for example, copper, silver, gold, or aluminum.

[0054] The cured silicone resin film 20 is provided on the mounting substrate 10 and is in contact with the mounting substrate 10. The cured silicone resin film 20 is also in contact with the first cured silicone resin 30 and is located between the mounting substrate 10 and the first cured silicone resin 30. In addition, the cured silicone resin film 20 is also in contact with the conductive pattern 11 and the third cured silicone resin 70 in a part or all of the region in a plan view relative to the mounting substrate 10. The cured silicone resin film 20 is arranged around and near the side surface of the light emitting element 40 in a plan view relative to the mounting substrate 10. For example, the cured silicone resin film 20 is arranged in a region within 3 mm from the side surface of the light emitting element 40 in a plan view relative to the mounting substrate 10 at least. The cured silicone resin film 20 is adjacent to the light emitting element 40, but the cured silicone resin film 20 and the light emitting element 40 may be separated in a plan view relative to the mounting substrate 10.

[0055] The cured silicone resin film 20 is, for example, a film obtained by modifying a scattered film formed by evaporating and scattering a part of the silicone resin used to form the cured silicone resin. The thickness of the cured silicone resin film 20 is, for example, 0.1 μm or less. The cured silicone resin film 20 contains, for example, silicone as a main component, silicone obtained by oxidatively modifying silicone having a hydrocarbon group on the side chain such as polydimethyl silicone or polydiphenyl silicone, and a coupling agent. The coupling agent is, for example, a silane coupling agent having a functional group such as a vinyl group or an epoxy group for bonding to a polymer such as silicone in the resin, and a functional group such as an OH group for bonding to a substrate having an OH group such as a mounting substrate in one molecule.

[0056] The oxygen content per unit volume of the silicone resin cured material film 20 in the entire thickness direction is greater than the oxygen content per unit volume of the first silicone resin cured material 30. In other words, regardless of the position in the thickness direction, the oxygen content per unit volume of the silicone resin cured material film 20 is greater than the oxygen content per unit volume of the first silicone resin cured material 30. For example, the oxygen content per unit volume of the silicone resin cured material film 20 in the entire thickness direction at the same position in the plane vision relative to the silicone resin cured material film 20 is greater than the oxygen content per unit volume of the first silicone resin cured material 30. The oxygen content in the present application is calculated, for example, from the amount of SiO2-based fragment ions measured by the TOF-SIMS (Time-Of-Flight Secondary-Ion-Mass-Spectoroscopy) method. The specific calculation method is described below. As a result, OH groups are easily present on the surface of the silicone resin cured material film 20.

[0057] The first silicone resin cured material 30 is a resin member for covering various components such as the light emitting element 40. The first silicone resin cured material 30 is in contact with the upper surface of the silicone resin cured material film 20. The first silicone resin cured material 30 is also in contact with the side surfaces of the light-transmitting component 50, the second silicone resin cured material 60, and the third silicone resin cured material 70. The first silicone resin cured material 30 is arranged in a region surrounded by the third silicone resin cured material 70, the mounting substrate 10, and the light-emitting element 40. The first silicone resin cured material 30 is located around the light-emitting element 40, the light-transmitting component 50, and the second silicone resin cured material 60 in a planar view relative to the mounting substrate 10, and covers them. In addition, the first silicone resin cured material 30 covers the upper side of the mounting substrate 10. It should be noted that the first silicone resin cured material 30 may also be in contact with the mounting substrate 10 and the light-emitting element 40.

[0058] The first silicone resin cured material 30, for example, contains silicone having a hydrocarbon group on the side chain, such as polydimethyl silicone or polydiphenyl silicone, which is a silicone as a main component, and a coupling agent. In addition, a particulate light-reflective material may also be added to the first silicone resin cured material 30. Examples of the light-reflective material include titanium oxide (TiO2) and zinc oxide (ZnO). Thus, the first silicone resin cured material 30 has electrical insulation and light-reflective properties. Since the first silicone resin cured material 30 has light-reflective properties, light emitted from the lower side and the side of the light-emitting element 40 is reflected by the light-reflective material and emitted from the semiconductor device 1 toward the upper side.

[0059] The light emitting element 40 is mounted on the upper side of the mounting substrate 10. The light emitting element 40 is, for example, a solid light emitting element such as an LED. As the LED, for example, a blue LED in which a nitride compound semiconductor is formed on a GaN substrate is used. Figure 1 and Figure 2 In the example shown in FIG. 1 , two light emitting elements 40 are mounted on the upper side of the mounting substrate 10 by being electrically connected in series. However, the number of light emitting elements 40 mounted on the mounting substrate 10 is not particularly limited and may be one or more than three.

[0060] The light-transmitting member 50 is a member that transmits light emitted from the light-emitting element 40. The light-transmitting member 50 is made of, for example, resin or glass. The light-transmitting member 50 may also include a phosphor that converts the wavelength of at least a portion of the light emitted from the light-emitting element 40. The phosphor is dispersed in the light-transmitting member 50.

[0061] The second silicone resin cured material 60 is disposed between the light emitting element 40 and the light transmissive member 50, and covers the side surface of the light emitting element 40. The second silicone resin cured material 60 may also cover the side surface of the light transmissive member 50. The second silicone resin cured material 60 bonds the light emitting element 40 to the light transmissive member 50. The second silicone resin cured material 60 contains, for example, silicone having a hydrocarbon group on a side chain such as polydimethyl silicone or polydiphenyl silicone as a main component of silicone, and a coupling agent.

[0062] The third silicone resin cured material 70 is arranged on the upper side of the mounting substrate 10, and is in contact with the outer side of the first silicone resin cured material 30 in a planar view relative to the mounting substrate 10. The third silicone resin cured material 70 is in contact with the mounting substrate 10. In addition, the third silicone resin cured material 70 is located near the silicone resin cured material film 20 in a planar view relative to the mounting substrate 10. The third silicone resin cured material 70 functions as a frame for intercepting the flow of the silicone resin when the first silicone resin cured material 30 is formed. The third silicone resin cured material 70 is, for example, a cured material of a UV-curable silicone resin. The third silicone resin cured material 70 may also be a cured material of a thermosetting silicone resin. The third silicone resin cured material 70 contains, for example, silicone having a hydrocarbon group on a side chain such as polydimethyl silicone or polydiphenyl silicone of silicone as a main component, and a coupling agent.

[0063] In addition, the third silicone resin cured material 70 may also be a reflective member having light reflectivity with respect to UV light. For example, the reflective member is formed by evaporating the third silicone resin cured material 70 with a metal or the like that reflects UV light. The details are described below, but the oxygen content of the silicone resin cured material film 20 can be increased by irradiation with UV light. Therefore, in this case, the oxygen content per unit volume of the entire thickness direction of the portion near the reflective member in the silicone resin cured material film 20 becomes greater than the oxygen content per unit volume of the entire thickness direction of the portion farther away from the reflective member than the nearby portion. Therefore, in the portion near the reflective member, the adhesion between the silicone resin cured material film 20 and the first silicone resin cured material 30 is further improved.

[0064] It should be noted that, instead of the third silicone resin cured product 70 , the frame may be formed of other resin materials or ceramics.

[0065] Generally speaking, although the silicone resin itself does not have the bonding function with the substrate such as the mounting substrate 10, by mixing a small amount of coupling agent in the silicone resin and then coating and curing, the bonding function can be given, and the bonding force between the substrate and the silicone resin is improved. Specifically, if there is an OH group on the surface of the substrate such as metal, ceramic or plastic on the coating side when the silicone resin is coated and cured, the OH group on the surface of the substrate and the OH group of the coupling agent contained in the silicone resin are close to each other. The OH group on the surface of the close substrate and the OH group of the coupling agent undergo a dehydration reaction by heating, etc., and a covalent bond is formed between the substrate and the silicone resin. As a result, the bonding force between the substrate and the silicone resin cured product is improved. In addition, during curing, since the coupling agent is bonded to the substrate, the coupling agent becomes locally present at the interface between the substrate and the silicone resin. Therefore, after curing, the surface of the silicone resin cured product that is not bonded to the substrate becomes a state where there is basically no OH group.

[0066] [Function and Effect]

[0067] Next, the operation and effects of the semiconductor device 1 according to the present embodiment will be described.

[0068] As described above, the semiconductor device 1 includes the mounting substrate 10, the cured silicone resin film 20 in contact with the mounting substrate 10, and the first cured silicone resin 30 in contact with the cured silicone resin film 20. In the semiconductor device 1, the oxygen content per unit volume of the cured silicone resin film 20 is greater than the oxygen content per unit volume of the first cured silicone resin 30 in the entire thickness direction.

[0069] As described above, the silicone resin cured product formed by the usual method (for example, the scattered film of silicone resin formed on the substrate due to some reasons) basically does not have OH groups on the surface. On the other hand, the silicone resin cured film 20 in the present embodiment is, for example, a silicone resin cured film in which the macro structure of silicone is not destroyed by irradiating the scattered film with ultraviolet rays (UV light) or the like, and only the hydrocarbon groups of the side chains of silicone are oxidized to increase the oxygen content. That is, OH groups are likely to exist on the surface of the silicone resin cured film 20 that is not the bonding side with the mounting substrate 10. In this way, when the first silicone resin cured product 30 is formed by coating the silicone resin cured product 20 having an oxygen content per unit volume greater than that per unit volume of the first silicone resin cured product 30, it becomes easy to form a bond through a coupling agent or the like contained in the silicone resin before curing of the first silicone resin cured product 30. Therefore, the adhesion between the silicone resin cured product film 20 and the first silicone resin cured product 30 is improved. Therefore, the semiconductor device 1 can suppress the peeling of the first silicone resin cured material 30 covering members such as the mounting substrate 10 of the semiconductor device 1 .

[0070] The semiconductor device 1 includes a light emitting element 40 mounted on the upper side of the mounting substrate 10, and a light transmissive member 50 disposed on the upper side of the light emitting element 40. The semiconductor device 1 is disposed between the light emitting element 40 and the light transmissive member 50, and includes a second silicone resin cured material 60 covering at least one of the side surface of the light emitting element 40 and the side surface of the light transmissive member 50. The silicone resin cured material film 20 is disposed around and near the side surface of the light emitting element 40 in a plan view relative to the mounting substrate 10.

[0071] As described above, the adhesive force between the cured silicone resin film 20 and the first cured silicone resin 30 is improved. As a result, in a plan view relative to the mounting substrate 10, even around and near the side surfaces of the light emitting element 40 where peeling is easily caused by heat generation of the light emitting element 40, peeling of the first cured silicone resin 30 can be suppressed.

[0072] [Manufacturing method]

[0073] Next, refer to Figure 3 to Figure 15 At the same time, a method for manufacturing the semiconductor device 1 according to the first embodiment will be described.

[0074] Figure 3 This is a flowchart for explaining the method for manufacturing the semiconductor device 1 according to the first embodiment.

[0075] First, a mounting substrate 10 (sub-base) having a conductive pattern 11 formed thereon is prepared ( Figure 3As the mounting substrate 10, for example, a fired AlN substrate is used. Figure 4 It is a top view for explaining a step of preparing the mounting substrate 10 in the manufacturing process of the semiconductor device 1 .

[0076] like Figure 4 As shown in FIG. 1 , a conductive pattern 11 is formed in a 3×3 matrix on the mounting substrate 10. Although not shown in the figure, the conductive pattern 11 is electrically connected to the connection terminal on the back side, and power can be supplied to the light emitting element 40 connected to the conductive pattern 11. The mounting substrate 10 is cut into Figure 4 The shape of the dotted line shown in . Figure 4 In the example, nine semiconductor devices 1 are manufactured from one mounting substrate 10. It should be noted that the mounting substrate 10 may not be divided, and one semiconductor device 1 may be manufactured from one mounting substrate 10, or one mounting substrate 10 may be divided into a number other than nine.

[0077] Furthermore, when a plurality of light emitting elements 40 are used for one semiconductor device 1, a conductive pattern may be appropriately formed so as to enable series connection or parallel connection by flip-chip connection. Figure 4 The conductive pattern 11 shown in the figure is a pattern when two light emitting elements 40 are connected in series, but the shape of the metal pad can also be designed so as to be able to make bump connection with the p-type electrode and the n-type electrode of the light emitting element 40. It should be noted that the actual conductive pattern 11 on the mounting substrate 10 has a complex shape corresponding to the electrode pattern of the light emitting element 40, but Figure 4 Simplified shown in FIG.

[0078] Next, the light emitting element 40 is mounted on the mounting substrate 10 ( Figure 3 S12). Figure 5 It is a top view for explaining a step of mounting the light emitting element 40 in the manufacturing process of the semiconductor device 1 .

[0079] As the mounted light emitting element 40, a blue LED chip having a nitride compound semiconductor formed on a GaN substrate is used. For example, a plurality of metal bumps are placed on a metal pad, and the light emitting element 40 is placed by flip-chip method with the growth substrate side facing upward, and ultrasonic welding is performed. For example, the light emitting element 40 is placed on a metal bump with a height of 100 μm, a width of 1 mm, and a height of 20 μm. Figure 5 As shown in FIG. 1 , two light emitting elements 40 are mounted on the cut mounting substrate 10 .

[0080] It should be noted that the growth substrate may also have a micro texture structure by making the back side (the upper surface of the light emitting element 40 mounted thereon) rough. In order to make the back side of the growth substrate rough, tiny bumps and depressions are formed by etching, sandblasting, or processing using a laser or a cutting blade. When the growth substrate is sapphire or the like, and a growth substrate with a lower refractive index than GaN is used as the substrate, the back side of the growth substrate may also be made flat.

[0081] Next, the light-transmitting member 50 is bonded onto the light-emitting element 40 .

[0082] First, an adhesive 60a is applied on the light emitting element 40 ( Figure 3 The details are described below, but the second silicone resin cured product 60 is formed by curing the adhesive 60a. Figure 6 1 is a top view for explaining the step of applying the adhesive 60a in the manufacturing process of the semiconductor device 1. Figure 6 In the Figure 4 and Figure 5 One of the ranges enclosed by the dotted lines (the range of one semiconductor device 1 after cutting). Figure 6 As shown in the figure, a prescribed amount of translucent resin is applied as an adhesive 60a by a dispenser to the center of the back side (upper surface) of the growth substrate of the light-emitting element 40. The adhesive 60a is, for example, a liquid silicone resin. The silicone resin is, for example, a thermosetting silicone resin, or a UV-curing silicone resin. The silicone resin, for example, has a main silicone component of polydimethyl silicone, but may also be polydiphenyl silicone or modified polysilicone. In addition, the silicone resin may also contain a coupling agent to improve the adhesion with the light-emitting element 40 and the translucent component 50. It should be noted that a dispensing method is used for applying the adhesive 60a, but other coating methods such as a stamping method may also be used.

[0083] Next, the light-transmitting member 50 ( Figure 3 S14). Figure 7 , Fig. 8A , Figure 8B and Figure 8C 1 is an example of a cross-sectional view for explaining a step of pressing the light-transmitting member 50 from above the adhesive 60a in the manufacturing process of the semiconductor device 1. Figure 7 , Fig. 8A , Figure 8B and Figure 8C In the Figure 4 and Figure 5 One of the ranges enclosed by the dotted lines (the range of one semiconductor device 1 after cutting). Figure 8B and Figure 8CAs another example of the light-transmitting member 50, a light-transmitting member having a size of Fig. 8A The light-transmitting component 50 is different from the light-transmitting components 50a and 50b.

[0084] like Figure 7 As shown in , the light-transmitting member 50 is placed on the adhesive 60a, and the light-transmitting member 50 is pressed from above, so that the adhesive 60a is spread and the upper surface of the light-emitting element 40 is completely covered. The light-transmitting member 50 is placed so that the center is aligned with the light-emitting element 40 in a planar view relative to the mounting substrate 10. At this time, the gap between the light-emitting element 40 and the light-transmitting member 50 becomes smaller, as shown in FIG. Fig. 8A As shown in FIG. , the adhesive 60a overflows from the bonding surface between the light emitting element 40 and the light transmissive member 50 to the side surface of the light emitting element 40, covering the side surface of the light emitting element 40. Figure 8B and Figure 8C In FIG. 1 , it is shown that the adhesive 60a is connected to the Fig. 8A The translucent member 50 is pressed by the translucent member 50a or 50b of a different size in a planar view relative to the mounting substrate 10.

[0085] The adhesive 60a is formed due to the size relationship between the light emitting element 40 and the light transmissive member 50, 50a or 50b. Fig. 8A , Figure 8B and Figure 8C As shown in Fig. 8A As shown in FIG. 1 , in the plan view relative to the mounting substrate 10, when the size of the light emitting element 40 is smaller than the size of the light-transmitting member 50, the adhesive 60a covers the side surface of the light emitting element 40. Figure 8B As shown in , in the plan view relative to the mounting substrate 10, when the size of the light emitting element 40 is equal to or greater than the size of the light transmissive member 50a, the adhesive 60a covers the side surfaces of both the light emitting element 40 and the light transmissive member 50a. Figure 8C As shown in , in a plan view relative to the mounting substrate 10, when the size of the light emitting element 40 is greater than the size of the light transmissive member 50b, the adhesive 60a covers the side surface of the light transmissive member 50b. In this way, the shape of the portion where the adhesive 60a overflows changes according to the size of the light transmissive member, and the adhesive 60a covers at least one of the side surface of the light emitting element 40 and the side surface of the light transmissive member.

[0086] Then, the mounting substrate 10 with the adhesive 60a pressed on the light-transmitting member 50 is heated in an oven at 150° C. for about 3 hours to cure the adhesive 60a. In addition, during the curing, a scattered film 20a ( Figure 3The details are described below, but the scattered film 20a is modified to form a silicone resin cured film 20. Fig. 9A It is a cross-sectional view for explaining the step of curing the adhesive 60 a in the manufacturing process of the semiconductor device 1 . Fig. 9B It is a top view for explaining a step of curing the adhesive 60 a in the manufacturing process of the semiconductor device 1 .

[0087] like Fig. 9A and Fig. 9B As shown in FIG. 1 , due to the high vapor pressure, low molecular weight silicone and coupling agent in the silicone resin (liquid) evaporate from the adhesive 60a by heating during curing, and scatter around and near the light emitting element 40 in a planar view relative to the mounting substrate 10. As a result, a scattered film 20a is formed as a film of a silicone resin cured product containing low molecular weight silicone and coupling agent, which is in contact with the mounting substrate 10. In addition, the adhesive 60a is cured by heating, and the second silicone resin cured product 60 is formed by the adhesive 60a.

[0088] Fig.10 This is a diagram showing an example of the relationship between the distance from the silicone resin (evaporation source) and the thickness of the scattered film 20 a formed. Fig.10 The distance from the evaporation source (adhesive 60a) is Fig. 9B The distance from the side surface of the light emitting element 40 in the plane view relative to the mounting substrate 10 as shown in FIG. Fig.10 , the height of the adhesive 60a from the mounting substrate 10 is 20 μm to 120 μm, and the thickness of the scattered film 20a when it is thermally cured at 150°C for 3 hours is shown. The thickness of the scattered film 20a is measured by, for example, repeatedly performing measurement using the TOF-SIMS method and sputtering using sputtered ions with a thickness of about 1 nm, and analyzing the position where fragment ions originating from the scattered film 20a are detected. The thickness of the silicone resin cured film 20 can also be measured by the same method.

[0089] like Fig.10 As shown in , the thickness of the scattered film 20a on the mounting substrate 10 at a position 1 mm away from the evaporation source is, for example, 6 nm. Generally speaking, in the case of lateral scattering, since the thickness of the scattered film 20a can be approximately inversely proportional to the distance, the thickness of the scattered film 20a formed becomes thicker when the distance from the evaporation source is closer. Therefore, the thickness of the scattered film 20a can be, for example, Fig.10 As shown by the dotted line, it decreases monotonically as it moves away from the side surface of the light emitting element 40.

[0090] When a silicone resin cured product is further formed on the mounting substrate 10 on which the scattered film 20a is formed, the silicone resin cured product is easily peeled off from the mounting substrate 10 at a distance of about 3 mm or less from the light-emitting element. That is, it is considered that at a position within 3 mm from the light-emitting element 40, since the scattered film 20a is formed on the mounting substrate 10 without a gap, the easy peelability of the silicone resin cured product is the same as that of a general silicone resin cured product. On the other hand, the thickness of the scattered film 20a at a distance of 3 mm from the light-emitting element is predicted to be 2 nm. It is considered that when the thickness of the scattered film is less than 2 nm, since the scattered film only partially covers the surface of the mounting substrate (i.e., covers it in an island shape), a part of the silicone resin cured product can be directly bonded to the mounting substrate 10, and is therefore not easily peeled off.

[0091] Next, a UV-curable dam 70a ( 20a ) is formed on the mounting substrate 10 so as to surround the entire light emitting element 40 in plan view. Figure 3 The dam material 70a serves as a frame to prevent the material for forming the reflective member covering the side and bottom surfaces of the light emitting element 40 from flowing out in the subsequent process. The details are described below, but the third silicone resin cured product 70 is formed by curing the dam material 70a.

[0092] Fig.11 It is a top view for explaining a step of forming the dam 70 a in the manufacturing process of the semiconductor device 1 . Fig.12 yes Fig.11 The cross-sectional view on line XII-XII. Fig.11 and Fig.12 As shown in , the dam material 70a is formed by coating the mounting substrate 10 by a dispensing method or the like in a manner of surrounding the plurality of light emitting elements 40. Three dam materials 70a are formed in a manner of surrounding the plurality of light emitting elements 40 arranged in the longitudinal direction, but the shape of the light emitting elements 40 is not limited. The dam material 70a may be formed in a manner of surrounding two light emitting elements 40 included in a semiconductor device after cutting, or in a manner of surrounding the plurality of light emitting elements 40 arranged in the transverse direction, or in a manner of surrounding all the light emitting elements 40 on the mounting substrate 10. In addition, the dam material 70a may overlap with the upper surface of the scattered film 20a in a planar view relative to the mounting substrate 10, or may be separated.

[0093] Here, as a necessary condition for the structure of the dam material 70a, the higher the viscosity of the material forming the dam material 70a, the better. However, if it is too high, it becomes difficult to eject the material from the coating nozzle. Therefore, the viscosity of the material forming the dam material 70a can also be adjusted to a viscosity that does not collapse much after coating, such as a paste-like toothpaste, specifically, a viscosity of about 100 Pa·s to 200 Pa·s.

[0094] For example, the material for forming the dam 70a is applied by a dispensing method in a manner such that it becomes a thin line with a width of about 200 μm. For example, the thin line is formed by applying the material under the conditions that the inner diameter of the coating nozzle is φ250 μm, the ambient temperature during coating is 30° C., the viscosity of the material at 30° C. is about 200 Pa·s, and the coating speed is 2.8 mm / s.

[0095] The material forming the dam 70 a is a UV curable silicone resin in this embodiment, but may be a thermosetting silicone resin. The case where the material forming the dam 70 a is a thermosetting silicone resin will be described below.

[0096] Next, UV light is irradiated from above the mounting substrate 10 ( Figure 3 S17). Therefore, Fig.11 and Fig.12 The mounting substrate 10 shown in the figure, which is formed with a scattered film 20a and a linear dam material 70a, is irradiated with UV light, and the scattered film 20a is modified and the paste-like dam material 70a is UV cured. In the modification of the scattered film 20a, specifically, dimethyl silicone is oxidized, and the methyl group of the side chain of silicone is replaced by an OH group. By irradiation with UV light, a silicone resin cured film 20 is formed from the scattered film 20a. In addition, by irradiation with UV light, a third silicone resin cured product 70 is formed, which functions as a frame that prevents the material for forming the reflective component from flowing out of the dam material 70a in the subsequent process. The lamp used for UV curing is, for example, a low-pressure mercury lamp, but it can also be other lamps that irradiate UV light, such as a high-pressure mercury lamp.

[0097] For example, in the UV irradiation process, a low-pressure mercury lamp is used, and the accumulated light intensity is 3000 mJ / cm in the air atmosphere at a temperature of 50°C for 3 minutes. 2 The irradiation conditions of UV light are not limited to the above conditions. For example, the irradiated UV light may also have a cumulative light amount of 1000 mJ / cm 2 ~5000mJ / cm 2 The cumulative amount of UV light was 1000, 3000 and 5000 mJ / cm 2In the case where the silicone resin cured film 20 is formed from the scattered film 20a by irradiating UV light, the effect of improving the adhesion with the first silicone resin cured product 30 (reflection member) formed later is seen. The oxygen content per unit volume of the silicone resin cured film 20 formed by irradiating UV light in this way is described below.

[0098] Here, the surface of the mounting substrate 10 in contact with the silicone resin cured film 20 may also have light reflectivity with respect to UV light. Thus, the UV light that has passed through the scattered film 20a or the silicone resin cured film 20 is reflected on the surface of the mounting substrate 10, and can irradiate the scattered film 20a or the silicone resin cured film 20 again, thereby improving the effect of modification. For example, in the case of a mounting substrate whose surface is formed of gold, aluminum, copper, etc., the reflectivity of UV light on the surface is 30% or more.

[0099] In addition, the thickness of the formed silicone resin cured film 20 can be less than 0.1 μm, or less than 0.01 μm. In the case where the thickness of the silicone resin cured film 20 is thin, the oxygen in the atmosphere required for the oxidation reaction by UV irradiation is supplied to the entire thickness direction of the silicone resin cured film 20. Therefore, it is easy to increase the oxygen content per unit volume of the silicone resin cured film 20 in the entire thickness direction. In addition, in the case where the thickness of the silicone resin cured film 20 is thin, the generated gas such as water molecules generated inside the silicone resin cured film 20 can pass through the silicone resin cured film 20 and be released to the outside. In the case where the OH group of the coupling agent of the silicone resin cured film 20 forms a hydrogen bond with the OH group of the mounting substrate 10, a dehydration reaction is generated by UV irradiation to generate a covalent bond. Therefore, the adhesion between the silicone resin cured film 20 and the mounting substrate 10 is further improved. As a result, water molecules generated by the dehydration reaction are released to the outside, and the dehydration reaction is further promoted, thereby improving the adhesiveness between the cured silicone resin film 20 and the mounting substrate 10 .

[0100] In addition, as described above, the thickness of the scattered film 20a may also decrease monotonically as it moves away from the side of the light emitting element 40. Therefore, the thickness of the cured silicone resin film 20 formed by the scattered film 20a may also decrease monotonically as it moves away from the side of the light emitting element 40. Thus, when the thickness of the cured silicone resin film 20 is thin, there is still a region where the cured silicone resin film 20 does not form a continuous film. Therefore, since the bonding of the mounting substrate 10 and the first cured silicone resin 30 (for example, bonding via a coupling agent) and the bonding of the cured silicone resin film 20 and the first cured silicone resin 30 coexist, the peeling of the first cured silicone resin 30 can be further suppressed.

[0101] Furthermore, the thickness of the scattered film 20 a is reduced by the irradiation of UV light, and for example, the thickness of the formed silicone resin cured film 20 at a distance of 1 mm from the side surface of the light emitting element 40 is 4 nm.

[0102] In addition, as described above, the dam material 70a is a UV curable silicone resin. Therefore, the third silicone resin cured product 70 formed by the dam material 70a is a cured product of the UV curable silicone resin. Therefore, since the third silicone resin cured product 70 is irradiated with a sufficient amount of UV light for modifying the scattered film 20a when forming the third silicone resin cured product 70, the oxygen content of the silicone resin cured product thin film 20 formed by the scattered film 20a can be increased. In addition, since the UV curable silicone resin does not require a heating and cooling process during curing, the manufacturing time of the semiconductor device 1 is shortened, and the productivity of the semiconductor device 1 is improved.

[0103] In addition, the third silicone resin cured material 70 (dam material 70a) may also be translucent with respect to UV light. Specifically, the transmittance of the third silicone resin cured material 70 (dam material 70a) with respect to UV light having a wavelength of 254 nm may also be 50% or more. For example, the third silicone resin cured material 70 is made of a material that does not contain UV absorbing materials such as titanium oxide. Thus, since the scattered film 20a located in the area overlapping with the third silicone resin cured material 70 is also irradiated with UV light in a planar view relative to the mounting substrate 10, the oxygen content of the silicone resin cured material thin film 20 formed by the scattered film 20a can be increased.

[0104] Next, the material for forming the reflective member is filled between the light emitting element 40 and the third silicone resin cured product 70 functioning as a frame, and the material is cured ( Figure 3 S18). Fig.13 It is a top view for explaining a step of filling and curing a material for forming a reflective member in a manufacturing process of the semiconductor device 1 . Fig.14 for Fig.13 Cross-sectional view along line XIV-XIV.

[0105] After the dam 70a is cured to form the third silicone resin cured product 70, the material for forming the reflective member is injected (filled) between the light emitting element 40 and the third silicone resin cured product 70. As the material for forming the reflective member, for example, a silicone resin in which titanium oxide particles are dispersed as a light reflective material in a thermosetting dimethyl silicone resin having a low viscosity of about 20 Pa·s is used.

[0106] After the low-viscosity reflective member forming material is spread between the light emitting element 40 and the third silicone resin cured product 70, or the surface of the reflective member forming material becomes flat, the mounting substrate 10 is heated in an oven to cure the reflective member forming material. The curing of the reflective member forming material is performed at 150° C. for 3 hours, for example. Thus, the first silicone resin cured product 30 is formed as a reflective member.

[0107] like Fig.13 and Fig.14 As shown in , the first silicone resin cured material 30 is formed to surround the region on the mounting substrate 10 on which the light emitting element 40 is mounted, namely, the bottom and side surfaces of the light emitting element 40 , the side surfaces of the second silicone resin cured material 60 , and the side surfaces of the light transmissive member 50 .

[0108] The material for forming the reflective member is not limited to liquid silicone resin, but may be a material obtained by dispersing a granular light-reflective material in a low-viscosity liquid translucent medium with a resin such as epoxy resin, acrylic resin, polyimide resin, urea resin, or fluororesin or glass as a main material. The light-reflective material is not limited to titanium oxide particles, but may be zinc oxide particles, for example. The reflective member such as the first silicone resin cured product 30 may be formed by curing a substance obtained by containing a light-reflective material and a dispersant for the light-reflective material in a liquid resin.

[0109] It should be noted that the first silicone resin cured product 30 may not be a reflective material including a light reflective material, but may be a sealing member or the like that does not contain a light reflective material.

[0110] Finally, the semiconductor device 1 is singulated by dicing ( Figure 3 S19). Fig.15 1 is a top view for explaining the process of singulating the semiconductor device 1 in the manufacturing process of the semiconductor device 1. Fig.15 As shown in , a mounting substrate 10 on which a plurality of semiconductor devices 1 are arranged in a matrix is ​​diced (separated) into individual semiconductor devices 1. During dicing, for example, a rotating grindstone (dicing blade) is used to separate the semiconductor devices 1. Fig.15 The dotted line portion C in the figure is where the cutting is performed. When the dicing blade is used to cut the hard mounting substrate 10 such as AlN, for example, a dicing blade with a width of about 100 μm to 150 μm is used. Figure 1 and Figure 2 The semiconductor device 1 shown in FIG.

[0111] [Test Example 1]

[0112] Next, a test example 1 of the semiconductor device 1 of the first embodiment is described. In this test example, the semiconductor device 1 is manufactured by the above-mentioned manufacturing method. Figure 3 In step S17, a low-pressure mercury lamp with a cumulative light intensity of 3000 mJ / cm 2 , in the atmosphere, at an ambient temperature of 50°C and for 3 minutes, the scattered film 20a was irradiated with UV light. Then, for the silicone resin cured material film 20 and the first silicone resin cured material 30 of the manufactured semiconductor device 1, TOF-SIMS analysis was performed at a position where the distance from the light emitting element 40 was 1 mm (thickness 6 nm) in a plane view relative to the mounting substrate 10. Specifically, at a position where the distance from the light emitting element 40 was 1 mm in a plane view relative to the mounting substrate 10, first, a portion of the upper side of the first silicone resin cured material 30 was cut off. Then, in the direction from the first silicone resin cured material 30 toward the silicone resin cured material film 20 (the thickness direction of the silicone resin cured material film 20), the measurement using the TOF-SIMS method and the sputtering using the sputtering ion with a thickness of about 1 nm were repeatedly performed. In this way, the fragment ions were measured multiple times along the thickness direction. In order to be able to compare the results of each measurement, the detection amount of each fragment ion was standardized. That is, the detection amount of the fragment ions per unit volume is obtained by standardization. Then, for each of the first cured silicone resin material 30 and the cured silicone resin film 20, the standardized multiple measurement results (measurement results obtained by measuring multiple times while performing sputtering in the thickness direction) are averaged for each fragment ion and set as the detection amount of the fragment ions of the first cured silicone resin material 30 and the cured silicone resin film 20.

[0113] Fig.16 This is a graph showing the detected amount of fragment ions of the cured silicone resin film 20 . Fig.16 The detection amount ratio shown on the vertical axis is a value calculated for each fragment ion by "detection amount ratio = detection amount of the cured silicone resin film 20 / detection amount of the first cured silicone resin 30". Fig.16In, as the detected fragment ions, SiC2H5O, SiCH3O2, SiC2H7O2, Si2C3H9O3, SiO2 and SiO2H ions are shown. Among them, SiC2H5O, SiCH3O2, SiC2H7O2 and Si2C3H9O3 ions are Si-CHO series fragment ions, which are fragment ions derived from dimethyl silicone skeletons. In addition, SiO2 and SiO2H ions are SiO2 series fragment ions, which are fragment ions whose detection amount becomes more as the oxygen content of silicone resin becomes more. Therefore, in this specification, the average value of the detection amount of SiO2 series fragment ions is set as oxygen content. It should be noted that the oxygen content can also be the oxygen content measured by a method other than the TOF-SIMS method.

[0114] like Fig.16 As shown in , the ratio F1 of the detected amount of Si-CHO-based fragment ions is greater than 90% and less than 110%, and if the values ​​of the individual fragment ions are averaged, it is approximately 100% (approximately 1.0 times). Therefore, on a per unit volume basis, the detected amount of the silicone resin cured material film 20 is approximately the same as the detected amount of the first silicone resin cured material 30. In contrast, the ratio F2 of the detected amount of SiO2-based fragment ions is 128% (approximately 1.3 times) if the values ​​of the individual fragment ions are averaged. Therefore, on a per unit volume basis, the detected amount of the silicone resin cured material film 20 is greater than the detected amount of the first silicone resin cured material 30. That is, the oxygen content per unit volume of the silicone resin cured material film 20 in the entire thickness direction is greater than the oxygen content per unit volume of the first silicone resin cured material.

[0115] Furthermore, not only the average of the detected amount at each thickness position of the cured silicone resin film 20 , but also the detected amount at each thickness position of the cured silicone resin film 20 is larger than the detected amount of the first cured silicone resin 30 .

[0116] [Test Example 2]

[0117] Next, Experimental Example 2 of the semiconductor device 1 of Embodiment 1 is described. In this experimental example, when the semiconductor device 1 is manufactured in Experimental Example 1, the UV light irradiation conditions in step S17 are 1000, 3000, and 5000 mJ / cm 2 In addition, for the semiconductor device 1 that is not irradiated with UV light in step S17 (in other words, the cumulative light amount in step S17 is 0 mJ / cm 2 The obtained semiconductor device was subjected to the organic silicone resin cured film 20 (the accumulated light intensity was 0 mJ / cm 2In the case of the scattering film 20a), the peel test was performed on the first silicone resin cured product 30. The peel test was performed under stress conditions of 0.5 MPa and 2.0 MPa. In addition, for the case of the scattering film 20a), the first silicone resin cured product 30 was tested. The peel test was performed under stress conditions of 0.5 MPa and 2.0 MPa. 2 The semiconductor device manufactured under the conditions of was also analyzed by the TOF-SIMS method in Experimental Example 1.

[0118] The results of the peel test showed that in the semiconductor device manufactured without irradiating the scattered film 20a with UV light, the interface between the scattered film 20a and the first silicone resin cured product 30 peeled under any stress conditions of 0.5 MPa and 2.0 MPa. On the other hand, under stress conditions of 1000, 3000, and 5000 mJ / cm 2 In the semiconductor devices manufactured by irradiating UV light with the accumulated light amount of 1.5 MPa and 2.0 MPa, no peeling occurred under the stress condition of 0.5 MPa. In addition, in the semiconductor devices, under the stress condition of 2.0 MPa, cohesive failure occurred in which the first silicone resin cured material 30 was broken inside the first silicone resin cured material 30 in a state where a part of the first silicone resin cured material 30 was bonded to the silicone resin cured material film 20. As described above, by irradiating the scattered film 20a with UV light to form the silicone resin cured material film 20, the peeling can be suppressed.

[0119] Fig.17 Is based on Fig.16 Graph showing the relationship between the ratio of the detected amount of fragment ions and the ratio of the detected amount of SiO 2 -based fragment ions. Fig.17 The vertical axis in φ represents the ratio of the detected amount of SiO 2 -based fragment ions of the cured silicone resin film 20 or the scattered film 20 a measured by the method of Test Example 1. Fig.17 The horizontal axis in FIG. 1 is the cumulative light intensity of UV light irradiation in step S17. If it is assumed that the ratio of the detected amount of SiO2-based fragment ions to the cumulative light intensity increases linearly, then, as described above, when the cumulative light intensity is 1000 mJ / cm 2 In the case of , the peeling mode is converted into cohesive failure, so it can be said that the adhesion is improved when the ratio of the detected amount is 1.1 times or more. That is, the oxygen content per unit volume of the cured silicone resin film 20 in the entire thickness direction may also be 1.1 times or more of the oxygen content per unit volume of the first cured silicone resin 30. In such a cured silicone resin film 20, there are many OH groups on the surface of the cured silicone resin film 20 that improve the adhesion, and the adhesion with the first cured silicone resin 30 is improved. From the viewpoint of further improving the adhesion, the oxygen content per unit volume of the cured silicone resin film 20 in the entire thickness direction may also be 1.25 times or more of the oxygen content per unit volume of the first cured silicone resin 30.

[0120] Furthermore, from the viewpoint of suppressing a decrease in the strength of the cured silicone resin film 20 , the oxygen content per unit volume of the cured silicone resin film 20 in the entire thickness direction may be 1.8 times or less of the oxygen content per unit volume of the first cured silicone resin 30 .

[0121] Furthermore, even when the thickness of the cured silicone resin film 20 was changed, the peel test results did not change, and no clear correlation was confirmed between the thickness of the cured silicone resin film 20 and the improvement in adhesive strength.

[0122] (Implementation Method 2)

[0123] Next, a semiconductor device according to Embodiment 2 will be described. In the following description of Embodiment 2, differences from Embodiment 1 will be mainly described, and description of common points will be omitted or simplified.

[0124] Fig.18 1 is a cross-sectional view showing the structure of the semiconductor device 2 according to the second embodiment. The semiconductor device 2 is different from the semiconductor device 1 according to the first embodiment in that it has a second silicone resin cured material 61 instead of the second silicone resin cured material 60 and has a silicone resin cured material film 21 in contact with the second silicone resin cured material 61 .

[0125] like Fig.18 As shown in , the semiconductor device 2 includes a mounting substrate 10 , silicone resin cured films 20 and 21 , a first silicone resin cured material 30 , a light emitting element 40 , a light transmissive member 50 , a second silicone resin cured material 61 , and a third silicone resin cured material 70 .

[0126] The cured silicone resin film 21 is in contact with the second cured silicone resin 61 and the first cured silicone resin 30, and covers the periphery of the second cured silicone resin 61. The cured silicone resin film 21 is located between the second cured silicone resin 61 and the first cured silicone resin 30, and joins the second cured silicone resin 61 to the first cured silicone resin 30. The cured silicone resin film 21 contains, for example, silicone having OH groups and a coupling agent, similarly to the cured silicone resin film 20. The oxygen content per unit volume of the cured silicone resin film 21 in the entire thickness direction is greater than the oxygen content per unit volume of the first cured silicone resin 30.

[0127] The second silicone resin cured material 61 is disposed between the light emitting element 40 and the translucent member 50, and covers the side surface of the light emitting element 40. In the present embodiment, the second silicone resin cured material 61 is an example of a substrate. The second silicone resin cured material 61 may also cover at least one of the side surface of the light emitting element 40 and the side surface of the translucent member 50. The second silicone resin cured material 61 has a portion that overflows from between the light emitting element 40 and the translucent member 50 to the side surface. The second silicone resin cured material 61 is in contact with the silicone resin cured material film 21 in the portion of the second silicone resin cured material 61 that overflows from between the light emitting element 40 and the translucent member 50 to the side surface.

[0128] The resin structure of the second silicone resin cured product 61 is substantially the same as the resin structure of the silicone resin cured product film 21. In the present embodiment, the so-called substantially the same resin structure means that the standardized detection amount of each Si-CHO series fragment ion derived from the main skeleton of the silicone resin cured product among the fragment ions detected by the TOF-SIMS method is substantially the same. For example, with respect to each Si-CHO series fragment ion, the ratio of the detection amount of the silicone resin cured product film 21 to the detection amount of the second silicone resin cured product 61 is Fig.16 The ratio of the detected amount of the fragment ions shown in is similarly 90% or more and less than 110%.

[0129] Next, a description will be given of a method for manufacturing the semiconductor device 2. The semiconductor device 2 is manufactured, for example, by using the mounting substrate 10 having light reflectivity with respect to UV light in the method for manufacturing the semiconductor device 1. Fig.19 It is a cross-sectional view for explaining the step of irradiating UV light in the manufacturing process of the semiconductor device 2 . Fig.19 In the Figure 3 In step S17 of the manufacturing process shown in FIG. 1 , the surface of the mounting substrate 10 on the side of the first silicone resin cured product 30 formed later (in other words, the upper surface of the mounting substrate 10 ) is used, which has light reflectivity with respect to UV light. Fig.19 As shown in FIG. 1 , the UV light is reflected on the upper surface of the mounting substrate 10, and the second silicone resin cured material 60 (see FIG. 1 ) is formed. Fig.12) is also irradiated, thereby modifying the surface of the second silicone resin cured material 60. As a result, the second silicone resin cured material 61 and the silicone resin cured material film 21 are formed from the second silicone resin cured material 60. In this way, the semiconductor device 2 having the silicone resin cured material film 21 in contact with the side surface of the second silicone resin cured material 61 is obtained. In this way, since the upper surface of the mounting substrate 10 has light reflectivity with respect to UV light, even the portion that becomes a shadow in the direct light of UV light is effectively irradiated with UV light, and thus the oxygen content of the silicone resin cured material film 21 is increased.

[0130] It should be noted that the mounting substrate 10 may not have light reflectivity with respect to UV light, and the second silicone resin cured material 60 may be irradiated with UV light by adjusting the position of a lamp or the like.

[0131] As described above, the semiconductor device 2 includes the second silicone resin cured material 61, the silicone resin cured material film 21 in contact with the second silicone resin cured material 61, and the first silicone resin cured material 30 in contact with the silicone resin cured material film 21. The oxygen content per unit volume of the silicone resin cured material film 21 in the entire thickness direction is greater than the oxygen content per unit volume of the first silicone resin cured material 30. In the semiconductor device 2, the second silicone resin cured material 61 is a material obtained by curing silicone resin, and the resin structure of the second silicone resin cured material 61 is substantially the same as the resin structure of the silicone resin cured material film 21.

[0132] As described above, the oxygen content per unit volume of the silicone resin cured material film 21 in contact with the second silicone resin cured material 61 is higher than the oxygen content per unit volume of the first silicone resin cured material 30. Such a silicone resin cured material film 21 can obtain the same effect as the silicone resin cured material film 20 of the first embodiment, and has high adhesion to the first silicone resin cured material 30. In addition, since the resin structure of the second silicone resin cured material 61 is substantially the same as the resin structure of the silicone resin cured material film 21, the silicone resin cured material film 21 is not a fragile structure even if the oxygen content is high, and the mechanical strength is maintained. Therefore, the silicone resin cured material film 21 is not easily damaged. Therefore, the semiconductor device 2 can suppress the peeling of the first silicone resin cured material 30.

[0133] In addition, the semiconductor device 2 further includes a mounting substrate 10, a light emitting element 40 mounted on the upper side of the mounting substrate 10, and a light transmissive member 50 disposed on the upper side of the light emitting element 40. The second silicone resin cured material 61 is disposed between the light emitting element 40 and the light transmissive member 50 to cover the side surface of the light emitting element 40. The first silicone resin cured material 30 is disposed on the upper side of the mounting substrate 10.

[0134] Thus, the second silicone resin cured material 61 and the first silicone resin cured material 30 covering the side surface of the light emitting element 40 are bonded to each other via the silicone resin cured material film 21. As described above, the silicone resin cured material film 21 and the first silicone resin cured material 30 have high adhesion. Therefore, the silicone resin cured material film 21 and the first silicone resin cured material 30, which are in contact with the second silicone resin cured material 61 covering the side surface of the light emitting element 40, can be suppressed from peeling off from each other.

[0135] (Implementation 3)

[0136] Next, a semiconductor device according to Embodiment 3 will be described. It should be noted that in the following description of Embodiment 3, differences from Embodiment 1 will be mainly described, and description of common points will be omitted or simplified.

[0137] Fig. 20 1 is a cross-sectional view showing the structure of the semiconductor device 3 according to the third embodiment. The semiconductor device 3 is different from the semiconductor device 1 according to the first embodiment in that it has a third silicone resin cured material 71 instead of the third silicone resin cured material 70 and has a silicone resin cured material film 22 in contact with the third silicone resin cured material 71 .

[0138] like Fig. 20 As shown in , the semiconductor device 3 includes a mounting substrate 10 , silicone resin cured films 20 and 22 , a first silicone resin cured material 30 , a light emitting element 40 , a light transmissive member 50 , a second silicone resin cured material 60 , and a third silicone resin cured material 71 .

[0139] The cured silicone resin film 22 is in contact with the third cured silicone resin 71 and the first cured silicone resin 30. The cured silicone resin film 22 covers the third cured silicone resin 71. The cured silicone resin film 22 is located between the third cured silicone resin 71 and the first cured silicone resin 30, and joins the third cured silicone resin 71 to the first cured silicone resin 30. The cured silicone resin film 22 contains, for example, silicone having an OH group and a coupling agent, similarly to the cured silicone resin film 20. The oxygen content per unit volume of the cured silicone resin film 22 in the entire thickness direction is greater than the oxygen content per unit volume of the first cured silicone resin 30.

[0140] The first silicone resin cured material 30 is arranged in a region surrounded by the third silicone resin cured material 71 , the mounting substrate 10 , and the light emitting element 40 .

[0141] The third silicone resin cured material 71 is disposed on the upper side of the mounting substrate 10 as at least a part of a frame including the light emitting element 40 and outside the light emitting element 40 in a plan view relative to the mounting substrate 10. In the present embodiment, the third silicone resin cured material 71 is an example of a base.

[0142] The resin structure of the third silicone resin cured material 71 is substantially the same as the resin structure of the silicone resin cured material film 22. For example, for each Si-CHO based fragment ion, the ratio of the detected amount of the silicone resin cured material film 22 to the detected amount of the third silicone resin cured material 71 is Fig.16 The ratio of the detected amount of the fragment ions shown in is similarly 90% or more and less than 110%.

[0143] Next, a method for manufacturing the semiconductor device 3 will be described. Fig.21 This is a flowchart for explaining a method for manufacturing the semiconductor device 3 according to the third embodiment.

[0144] like Fig.21 As shown in FIG. 1 , the steps from step S11 to step S15 are the same as those of the method for manufacturing the semiconductor device 1 of the first embodiment, and the description thereof is omitted. Fig. 9A and Fig. 9B As shown in FIG. 1 , a scattered film 20 a is formed around the light emitting element 40 in a plan view relative to the mounting substrate 10 .

[0145] Next, UV light is irradiated from above the mounting substrate 10 ( Fig.21 S31). Fig. 22 2 is a cross-sectional view for explaining the first UV light irradiation step in the manufacturing process of the semiconductor device 3. Fig. 22 As shown in FIG. 1 , the mounting substrate 10 formed with the scattered film 20a is irradiated with UV light to modify the scattered film 20a. Thus, the silicone resin cured film 20 is formed from the scattered film 20a. Regarding the irradiation conditions of the UV light, etc., due to the above Figure 3 The process is the same as step S17, so the description is omitted.

[0146] Next, a thermosetting dam 71a ( 20a ) is formed on the mounting substrate 10 so as to surround the entire light emitting element 40 in plan view. Fig.21 S32). Fig.23 2 is a cross-sectional view for explaining a step of forming the dam 71a in the manufacturing process of the semiconductor device 3. Fig.23As shown in FIG. 1 , the dam material 71a is formed by applying the dam material 71a to the mounting substrate 10 by a dispensing method or the like so as to surround the light emitting element 40. The material forming the dam material 71a is a thermosetting silicone resin. The structural requirements of the dam material 71a, the shape to be formed, and the coating method of the material forming the dam material 71a are different from those described above. Figure 3 The dam material 70a in step S16 is the same as that in step S16, so the description is omitted.

[0147] Next, the mounting substrate 10 formed with the dam 71a is heated to cure the dam 71a. During the curing, a scattered film 20b ( 20a ) is formed on the mounting substrate 10 around the dam 71a in a plan view relative to the mounting substrate 10. Fig.21 S33). Fig.24 1 is a cross-sectional view for explaining the step of curing the dam 71a in the manufacturing process of the semiconductor device 3. Due to the high vapor pressure, low molecular weight silicone and coupling agent in the silicone resin (liquid) evaporate from the dam 71a by heating during curing, and fly around and near the dam 71a in the plane view relative to the mounting substrate 10. As a result, Fig.24 As shown in , a scattered film 20b is formed in contact with the mounting substrate 10 and the silicone resin cured film 20. The silicone resin cured film 20 with a high oxygen content is formed from the scattered film 20b by the UV light irradiation in step S31, so the adhesion between the silicone resin cured film 20 and the scattered film 20b is high. Therefore, the silicone resin cured film 20 and the scattered film 20b are not easily peeled off.

[0148] The dam member 71a is cured by heating, and the dam member 71a forms the third silicone resin cured product 71. Heating during curing is performed for about 3 hours at a temperature about 50°C higher than the gelation temperature of the material forming the dam member 71a, for example.

[0149] Next, UV light is irradiated again from above the mounting substrate 10 ( Fig.21 S34). Fig.25 2 is a cross-sectional view for explaining the second UV light irradiation step in the manufacturing process of the semiconductor device 3. Fig.25 As shown in FIG. 1 , the mounting substrate 10 formed with the scattered film 20b is irradiated with UV light to modify the scattered film 20b. Thus, the silicone resin cured film 20 is formed from the scattered film 20b. In addition, by irradiating the surface of the third silicone resin cured product 71 with UV light, the surface of the third silicone resin cured product 71 is modified to form a silicone resin cured product film 22. Regarding the irradiation conditions of the UV light, etc., due to the above Figure 3 The process is the same as step S17, so the description is omitted.

[0150] After that, the material for forming the reflective member is filled and cured to form the first silicone resin cured product 30, and the semiconductor device 3 is singulated by dicing ( Fig.21 S18 and S19). Regarding these steps, due to the above Figure 3 Steps S18 and S19 are the same, and thus description thereof is omitted. In this manner, the mounting substrate 10 on which a plurality of semiconductor devices 3 are arranged in a matrix is ​​singulated by dicing to obtain Fig. 20 The semiconductor device 3 shown in FIG.

[0151] As described above, the semiconductor device 3 includes the third silicone resin cured material 71, the silicone resin cured material film 22 in contact with the third silicone resin cured material 71, and the first silicone resin cured material 30 in contact with the silicone resin cured material film 22. The oxygen content per unit volume of the silicone resin cured material film 22 in the entire thickness direction is greater than the oxygen content per unit volume of the first silicone resin cured material 30. In the semiconductor device 2, the third silicone resin cured material 71 is a material obtained by curing silicone resin, and the resin structure of the third silicone resin cured material 71 is substantially the same as that of the silicone resin cured material film 22.

[0152] Since such a cured silicone resin film 22 can obtain the same effects as the cured silicone resin film 21 of the second embodiment, the semiconductor device 3 can suppress the peeling of the first cured silicone resin 30 .

[0153] In addition, the semiconductor device 3 further includes a mounting substrate 10 and a light emitting element 40 mounted on the upper side of the mounting substrate 10. The third silicone resin cured material 71 is arranged on the upper side of the mounting substrate 10 and outside the light emitting element 40 as at least a part of a frame including the light emitting element 40. The first silicone resin cured material 30 is arranged in a region surrounded by the third silicone resin cured material 71, the mounting substrate 10, and the light emitting element 40.

[0154] Thus, the third silicone resin cured material 71 and the first silicone resin cured material 30, which are arranged as a frame surrounding the light emitting element 40, are bonded to each other via the silicone resin cured material film 22. As described above, the silicone resin cured material film 22 and the first silicone resin cured material 30 have high adhesion. Therefore, the silicone resin cured material film 22 and the first silicone resin cured material 30, which are in contact with the third silicone resin cured material 71 arranged so as to surround the light emitting element 40, can be suppressed from peeling off.

[0155] (Other Embodiments)

[0156] As mentioned above, the semiconductor device of the present application has been described based on the embodiments, but the present application is not limited to the above-mentioned embodiments.

[0157] For example, in the above embodiment, the semiconductor device is a light emitting device having the light emitting element 40, the light transmissive member 50 and the second silicone resin cured product 60, but the present invention is not limited thereto. The semiconductor device may also be a semiconductor device having other semiconductor elements such as transistors or diodes instead of the light emitting element 40.

[0158] In the above-mentioned first and second embodiments, the semiconductor device has the third silicone resin cured product 70, but the present invention is not limited thereto. For example, in order to achieve miniaturization of the semiconductor device, the third silicone resin cured product 70 may be cut by dicing in step S19. In addition, instead of the third silicone resin cured product 70, a frame may be formed on the mounting substrate 10 by other resin materials or ceramics.

[0159] In addition, in the above-mentioned embodiment 3, the manufacturing process of the semiconductor device 3 includes the steps of curing the adhesive 60a and the dam material 71a (step S15 and step S34), but it is not limited to this. For example, the step of curing the adhesive 60a in step S15 can be omitted, and the adhesive 60a and the dam material 71a are cured by heating after the dam material 71a is formed. In this case, since the formation of the scattered film 20a is not utilized in the step of curing the adhesive 60a, the step of irradiating UV light (step S31) can also be omitted.

[0160] In the third embodiment, a thermosetting silicone resin is used as the dam material 71a, but a UV curing silicone resin may be used. In this case, the step of curing the dam material 71a (step S33) may be omitted. Furthermore, in step S34, in addition to the UV light irradiation for curing the UV curing silicone resin, the UV light irradiation for modifying the surface of the third silicone resin cured product 71 is also performed.

[0161] In addition, in the above-mentioned Embodiments 2 and 3, the semiconductor device has the cured silicone resin film 20 in contact with the mounting substrate 10, but the present invention is not limited to this. For example, in the step of curing the adhesive 60a (step S15), the formation of the flying film 20a can be prevented by generating an airflow, etc., so that a semiconductor device without the cured silicone resin film 20 on the mounting substrate 10 can be manufactured.

[0162] In addition, various modifications that can be conceived by those skilled in the art relative to the implementation of the embodiments and methods implemented by arbitrarily combining the components and functions in each embodiment within the scope not departing from the gist of the present application are also included in the present application.

[0163] Industrial Applicability

[0164] The semiconductor device of the present application can be used for a semiconductor device covered with a resin material, and is useful for, for example, a semiconductor device using a light-emitting element as a semiconductor element.

[0165] Explanation of symbols

[0166] 1, 2, 3 Semiconductor devices

[0167] 10 Mounting the Base Plate

[0168] 11 Conductive pattern

[0169] 20, 21, 22 Silicone resin cured film

[0170] 20a, 20b Scattered film

[0171] 30 The first silicone resin cured product

[0172] 40 Light-emitting element

[0173] 50, 50a, 50b light-transmitting member

[0174] 60, 61 Second organic silicone resin cured product

[0175] 60a Adhesive

[0176] 70, 71 The third silicone resin cured product

[0177] 70a, 71a Dam material

Claims

1. A semiconductor device comprising: matrix; a cured silicone resin film in contact with the substrate; and a first cured organosilicon resin in contact with the cured organosilicon resin film; The oxygen content per unit volume of the cured silicone resin film in the entire thickness direction is greater than the oxygen content per unit volume of the first cured silicone resin. The cured silicone resin film is a cured silicone resin film obtained by irradiating the scattered film with ultraviolet rays to oxidize the hydrocarbon groups in the side chains of silicone to increase the oxygen content. The base is a mounting substrate, The semiconductor device further comprises: a light emitting element mounted on the upper side of the mounting substrate; a light-transmitting member disposed on an upper side of the light-emitting element; and a second silicone resin cured product, the second silicone resin cured product being disposed between the light emitting element and the light transmissive member and covering at least one of a side surface of the light emitting element and a side surface of the light transmissive member; The cured silicone resin film is arranged around and near the side surface of the light emitting element in a planar view relative to the mounting substrate.

2. The semiconductor device according to claim 1, wherein The thickness of the cured silicone resin thin film decreases monotonically as it moves away from the side surface of the light emitting element.

3. The semiconductor device according to claim 1 or 2, wherein: The thickness of the cured silicone resin film is less than 0.1 μm.

4. The semiconductor device according to claim 1 or 2, wherein: The oxygen content of the cured silicone resin thin film in the entire thickness direction is 1.1 times or more the oxygen content of the first cured silicone resin.

5. The semiconductor device according to claim 1 or 2, wherein: The surface of the mounting substrate in contact with the cured silicone resin film has light reflectivity with respect to UV light.

6. The semiconductor device according to claim 1 or 2, wherein: A reflective member having light reflectivity with respect to UV light is further provided near the cured silicone resin film. The portion of the cured silicone resin film near the reflector member has a higher oxygen content per unit volume over the entire thickness direction than the portion farther from the reflector member than the portion near the reflector member.

7. The semiconductor device according to claim 1 or 2, further comprising a third silicone resin cured material disposed on the upper side of the mounting substrate and in contact with the outer side of the first silicone resin cured material, The third silicone resin cured product is a UV-curable silicone resin cured product.

8. The semiconductor device according to claim 7, wherein: The third silicone resin cured product is light-transmissive to UV light.

9. The semiconductor device according to claim 1, further comprising: a light emitting element mounted on the upper side of the mounting substrate; A third silicone resin cured material surrounding the light emitting element on the upper side of the mounting substrate and outside the light emitting element; and another cured silicone resin film in contact with the third cured silicone resin and the first cured silicone resin; The other cured silicone resin film covers the third cured silicone resin. The first silicone resin cured material is arranged in a region surrounded by the third silicone resin cured material, the mounting substrate, and the light emitting element. The oxygen content per unit volume of the other cured silicone resin thin film in the entire thickness direction is higher than the oxygen content per unit volume of the first cured silicone resin.

10. The semiconductor device according to claim 1, further comprising: a light emitting element mounted on the upper side of the mounting substrate; a light-transmitting member disposed on the upper side of the light-emitting element; a second silicone resin cured product disposed between the light emitting element and the light transmissive member; and another cured silicone resin film in contact with a portion of the second cured silicone resin covering at least one of the side surfaces of the light emitting element and the side surfaces of the light transmissive member, and the first cured silicone resin, The other cured silicone resin film covers the outer periphery of the second cured silicone resin. The first silicone resin cured material is arranged on the upper side of the mounting substrate, The oxygen content per unit volume of the other cured silicone resin thin film in the entire thickness direction is higher than the oxygen content per unit volume of the first cured silicone resin.

11. The semiconductor device according to claim 9 or 10, wherein: The surface of the mounting substrate on the first silicone resin cured product side has light reflectivity with respect to UV light.

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