Testing Method for High-Precision Large-Current-Flow Micro-Impedance Resistor and Non-Inductive Resistor Module

Abstract

The present invention relates to the technical field of performance testing of non-inductive resistors, and solves the technical problem that it is currently impossible to simulate and test the relevant performance of a load before a real test. In particular, it relates to a testing method for a high-precision large-current-carrying micro-impedance resistor, which includes the following processes: S1. Select the basic load resistor in the resistor module to be tested; S2. Measure the resistance value and inductance value of the basic load resistor; S3. Conduct a current-carrying test on the basic load resistor; S4. Build a test platform according to the simulation model, and connect the basic load resistor to the test platform for actual current-carrying testing; S5. Conduct a temperature change test on the basic load resistor; if the overall temperature rise of the basic load resistor is controllable, the overall structure of the basic load resistor is stable and reliable. The present invention achieves the purpose of simulating and testing the load before a real test, and at the same time provides a reliable simulation data basis for the real test.

Description

Technical Field

[0001] The present invention relates to the technical field of non-inductive resistor performance testing, and particularly to a testing method for a high-precision large-current-carrying micro-impedance resistor and a non-inductive resistor module. Background Art

[0002] In the field of pulsed power, the pulsed current of a pulsed emission device can reach several hundred kA or even MA level at the moment of emission. In order to reduce the device power and reduce the heat loss, the resistance value of the load resistor is mostly at the mΩ level, and it is required that the parasitic inductance of the resistor is as small as possible. Since it is not easy to develop a real load and the use cost is high, before the real test, a simulated load needs to be used to verify and test various related technical indicators to lay a good foundation for the real test and ensure the orderly and reliable development of the real test.

[0003] At present, before the real test of the load, there is a lack of corresponding load testing means, resulting in the inability to obtain various data of the load performance before the real test, and at the same time, unable to provide a reliable test data basis for the real test. Therefore, conducting a real test without a simulated test of the load is likely to cause various adverse conditions, and at the same time, there is no measure to timely solve possible technical problems in the real test, thereby reducing the success rate of the real test and increasing the test cost. Summary of the Invention

[0004] Aiming at the deficiencies of the prior art, the present invention provides a testing method for a high-precision large-current-carrying micro-impedance resistor and a non-inductive resistor module, which solves the technical problem that the related performance of the load cannot be simulated and tested before the real test at present, achieves the purpose of simulating and testing the load before the real test, and at the same time provides a reliable simulated data basis for the real test, thereby improving the success rate of the real test and reducing the test cost.

[0005] To solve the above technical problems, the present invention provides a technical solution: A testing method for a high-precision large-current-carrying micro-impedance resistor, including the following processes:

[0006] S1. Select the basic load resistor in the resistor module to be tested;

[0007] S2. Measure the resistance value and inductance value of the basic load resistor;

[0008] S3. Conduct a current-carrying test on the basic load resistor;

[0009] S4. Build a test platform according to the simulation model, and connect the basic load resistor to the test platform for actual current-carrying testing;

[0010] S5. Conduct a temperature change test on the basic load resistor;

[0011] If the overall temperature rise of the basic load resistor is controllable, the overall structure of the basic load resistor is stable and reliable;

[0012] If the overall temperature rise of the basic load resistor is uncontrollable, the overall structure of the basic load resistor is unstable;

[0013] S6. Obtain the test results of the basic load resistor.

[0014] Furthermore, in step S3, building the current-carrying test simulation model includes the following processes:

[0015] S31. Build the current-carrying test simulation model;

[0016] S32. Simulate the actual discharge condition of the basic load resistor through the simulation model.

[0017] Furthermore, in step S4, connecting the basic load resistor to the test platform for actual current-carrying test includes the following processes:

[0018] S41. Control the charging voltage to rise slowly, and then trigger the discharge;

[0019] S42. Obtain the trigger discharge condition and compare it with the actual discharge condition;

[0020] If the comparison results are consistent, the structure of the basic load resistor is stable, there is no deformation or damage phenomenon in the structure, and the overall structure is stable and reliable;

[0021] If the comparison results are inconsistent, the basic load resistor is unstable.

[0022] The present invention also provides another technical solution, a non-inductive resistor module, including a resistor module, the resistor module includes an assembly frame as the main body bearing structure, on which four basic load resistors are detachably fixed, insulating pads are installed at the ends of the four basic load resistors, the insulating pads are fixed on the assembly frame, and copper bars for series connection with each other are arranged at the front ends of the four basic load resistors.

[0023] Furthermore, the basic load resistor includes an outer tube and an inner tube arranged in a coaxial manner, the outer tube is sleeved outside the inner tube, and a gap is left between the inner wall of the outer tube and the outer wall of the inner tube.

[0024] Furthermore, the materials of the outer tube and the inner tube are both stainless steel.

[0025] Furthermore, the resistor module is composed of four basic load resistors connected in series in a rectangular array.

[0026] Furthermore, the ends of the four basic load resistors are all short-circuited through insulating pads.

[0027] Further, the specific dimensions of the resistor module are: 340 mm * 430 mm * 1718 mm, and the length of the basic load resistor is 1.6 meters.

[0028] By means of the above technical solutions, the present invention provides a test method for a high-precision large-current-carrying micro-impedance resistor and a non-inductive resistor module, which at least have the following beneficial effects:

[0029] 1. The test method for the high-precision large-current-carrying micro-impedance resistor proposed by the present invention can test the relevant performance of the load before the actual test, achieving the purpose of simulating the test for the load before the actual test, and at the same time providing a reliable simulation data basis for the actual test, thereby improving the success rate of the actual test and reducing the test cost.

[0030] 2. The non-inductive resistor module provided by the present invention is composed of four basic load resistors connected in series in a rectangular array, which can further reduce the influence of parasitic inductance, achieving an approximately non-inductive effect, and at the same time having the characteristics of simple structure, stable performance, safety and reliability, and convenient heat dissipation.

[0031] 3. The non-inductive resistor module provided by the present invention can withstand a high peak pulse current and has a low parasitic inductance. Moreover, the basic load adopts the coaxial layout of the inner tube and the outer tube of a stainless steel pipe. The stainless steel pipe is a non-ferromagnetic material. The processed resistor not only meets the requirements of the resistance value, but also the coaxial structure arrangement makes the parasitic inductance smaller. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The drawings described herein are used to provide a further understanding of the present application and form a part of the present application. The schematic embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation of the present application. In the drawings:

[0033] Figure 1 is a flowchart of the test method for the high-precision large-current-carrying micro-impedance resistor of the present invention;

[0034] Figure 2 is a flowchart of building a current-carrying test simulation model of the present invention;

[0035] Figure 3 is a flowchart of actually testing the current-carrying by connecting the basic load resistor to the test platform of the present invention;

[0036] Figure 4 is a circuit diagram of the parameter simulation model of the basic load resistor test platform of the present invention;

[0037] Figure 5 is a waveform diagram of the test of the parameter simulation model of the basic load resistor test platform of the present invention;

[0038] Figure 6Waveform diagram of the discharge current for testing the basic load resistance of the present invention;

[0039] Figure 7 Schematic diagram of the simulation result of the electromagnetic force of the basic load resistance simulation unit of the present invention;

[0040] Figure 8 Temperature rise curve diagram after each discharge in the thermal simulation of the basic load resistance of the present invention;

[0041] Figure 9 Temperature rise curve diagram after 20 - minute cooling in the thermal simulation of the basic load resistance of the present invention;

[0042] Figure 10 Waveform diagram for testing and recording the output current and voltage of the present invention;

[0043] Figure 11 Waveform diagram for testing two and recording the output current and voltage of the present invention;

[0044] Figure 12 Schematic diagram of the three - dimensional structure of the resistance module of the present invention;

[0045] Figure 13 Schematic diagram of the three - dimensional structure of the basic load resistance of the present invention;

[0046] Figure 14 Schematic cross - section diagram of the basic load resistance of the present invention.

[0047] In the figure: 10. Resistance module; 101. Assembly frame; 102. Basic load resistance; 103. Insulating spacer; 104. Copper busbar; 1021. Outer tube; 1022. Inner tube. Detailed implementation manners

[0048] To make the above - mentioned objects, features, and advantages of the present invention more obvious and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific implementation manners. Thereby, the implementation process of how the present application uses technical means to solve technical problems and achieve technical effects can be fully understood and implemented accordingly.

[0049] Figures 1 - 14 One embodiment of the present invention: A testing method for a high - precision large - current - carrying micro - impedance resistor includes the following processes:

[0050] S1. Select the basic load resistance in the resistor module to be tested. Since the overall resistance value of the non - inductive resistor is required to be 1.5 mΩ in theory, the current - carrying capacity is 1 MA, and a total of 24 MJ of energy needs to be absorbed. According to the overall scheme design, the volume and weight of this resistor are relatively large. For scheme verification and parameter confirmation, in this embodiment, a scaled - down version of the basic load resistance is used for testing and verification.

[0051] The resistance value of a single resistor module is 16.48 mΩ. When 12 such resistor modules are connected in parallel, the resulting resistance value is 1.37 mΩ. The resistor module is composed of 4 basic load resistors connected in series. Therefore, the resistance value of a single basic load resistor is 4.12 mΩ. So, the current passing through the basic load resistor should reach 85 kA, and the energy absorbed should reach 500 kJ.

[0052] The entire non-inductive resistor is formed by connecting 12 resistor modules in parallel. In this test, 1 / 12 of the non-inductive resistor with a theoretical value of 1.5 mΩ is selected for verification, that is, a single resistor module. For the convenience of subsequent testing, finally, a 1.6-meter basic load resistor in the resistor module, which is 1 / 4 of the resistor module, is selected for easy testing. The parameters of the basic load resistor to be tested are as follows:

[0053] Pipe diameter Pipe thickness Pipe length Cross-sectional area Resistance Outer pipe 70 mm 2.8 mm 1600 mm <![CDATA[590.8224mm 2 > 0.001976905 mΩ Inner pipe 40 mm 4.8 mm 1600 mm <![CDATA[530.5344mm 2 > 0.002201554 mΩ Total 0.004178459 mΩ

[0054] S2. Measure the resistance value and inductance value of the actual basic load resistor. Using a resistance meter and a capacitance-inductance tester, the measured resistance of the actual basic load resistor is 4.13 mΩ, and the inductance value is 0.1 μH, which is close to the theoretical design value.

[0055] S3. Conduct a current-carrying test on the basic load resistor. To further verify the performance of the basic load resistor, a current-carrying test is conducted on the basic load resistor, and a simulation model is built as Figure 4 shown.

[0056] Figure 4 This is the circuit diagram of the simulation model of the parameters of the basic load resistor test platform. Among them, C9 is the energy storage capacitor, R32 is the internal resistance of the parasitic inductance, ESL9 is the parasitic inductance, U9 is the discharge switch, R16 is the discharge load, R12 is the internal resistance of the inductance, L3 is the loop inductance, R3 is the loop resistance, and D18 is the freewheeling diode.

[0057] Select the energy storage capacitor C9 in the current-carrying test loop to be 42.5 mF. A 15 μH loop inductance L3 is connected in series in the loop. The self-resistance of the loop inductance L3 is 1.6 mΩ. At the same time, a discharge load R16 is connected in series in the loop, and a parasitic inductance ESL9 and a discharge switch U9 are connected in series in the main circuit. At this time, the energy storage capacitor C9 in the main circuit is gradually charged, and then through the control of the discharge switch U9, the discharge load R16 is discharged. Since the resistance value of the discharge load R16 is very small, the relevant parasitic parameters of each component in the discharge loop need to be considered. Therefore, this circuit is designed, and various resistors and inductors are used to simulate the parasitic inductance, parasitic resistance, capacitance internal resistance, inductance internal resistance, etc. of the discharge loop.

[0058] Considering the circuit parasitic parameters as above, when the charging voltage on the energy storage capacitor C9 reaches 2.4 kV, the actual output current can reach 92.4 kA, which exceeds the actual working current of 84 kA by 10%. At the same time, the 10 kV voltage in the specification is applied to the resistor and inductor simultaneously. According to the current charging voltage, it is already very close to 10 kV. There is no problem with the designed discharge load R16 meeting the withstand voltage of 10 kV.

[0059] S31. Build a current-carrying test simulation model;

[0060] S32. Simulate the real discharge working condition of the basic load resistor through the simulation model.

[0061] Figure 5 It is the waveform diagram of the simulation model test for the parameters of the basic load resistor test platform.

[0062] Combined with Figure 5 the test waveform diagram, this circuit simulates the real discharge working condition of the basic load resistor and is used to conveniently verify the reliability of the basic load resistor.

[0063] S4. Build a test platform according to the simulation model, and connect the basic load resistor to the test platform for actual current-carrying test;

[0064] S41. Control the charging voltage to rise slowly, and then trigger the discharge. The performance of the basic load resistor is stable. At the same time, when the set voltage value reaches 2.4 kV, the output waveform is as Figure 6 shown and reaches 92.4 kA;

[0065] S42. Obtain the trigger discharge working condition and compare it with the real discharge working condition;

[0066] If the comparison results are consistent, the structure of the basic load resistor is stable, there is no deformation or damage to the structure, and the overall structure is stable and reliable;

[0067] If the comparison results are inconsistent, there is instability in the basic load resistor.

[0068] Refer to Figure 6 the waveform diagram of the test discharge current of the basic load resistor. It can be seen that the above is the discharge current waveform when the charging voltage of the energy storage capacitor is 2.4 kV. This waveform has a correspondence of 1 V to 1 kA, and the total discharge current is 92.4 kA, with an overall pulse width of 8 ms, which is basically consistent with the results of the test simulation model. In this case, the structure of the basic load resistor is stable, there is no deformation or damage to the structure, and the overall structure is stable and reliable.

[0069] S5. Conduct a temperature change test on the basic load resistor;

[0070] If the overall temperature rise of the basic load resistor is controllable, the overall structure of the basic load resistor is stable and reliable;

[0071] If the overall temperature rise of the basic load resistor is uncontrollable, there is instability in the overall structure of the basic load resistor.

[0072] To simulate the temperature change of the basic load resistor, 500 kJ of energy needs to be quickly applied to the basic load resistor in a short time. Considering the actual situation of the test platform, with a single charge of 2.4 kV, the energy applied to the basic load resistor each time is about 100 kJ. The charge-discharge test is carried out 5 times at a working frequency of 2 min / time to check the temperature rise of the basic load resistor. When 500 kJ of energy is applied to the resistor module in a short time, the highest temperature is 55 °C and the overall temperature rise is controllable.

[0073] Summary: The overall structure of the basic load resistor, the test object this time, is reliable, the temperature rise is controllable, and it meets the test requirements.

[0074] S6. Obtain the test results of the basic load resistor. The test method for the high-precision large current-carrying micro-impedance resistor proposed in this embodiment can test the relevant performance of the load before the actual test, achieving the purpose of simulating the test for the load before the actual test. At the same time, it provides a reliable simulation data basis for the actual test, thereby improving the success rate of the actual test and reducing the test cost.

[0075] Perform electromagnetic force and thermal simulation on the basic load resistor, as Figures 7 to 9 shown.

[0076] Calculate the resistance magnetic field according to the 2D plane model of the basic load resistor. The basic load resistor uses stainless steel. The maximum magnetic flux generated by the magnet is 3.2 T. The theoretical strength of 304 stainless steel is 1000 MPa. The structural strength of the basic load resistor meets the requirements.

[0077] Use the 3D model to calculate the temperature rise. The basic load resistor uses stainless steel. Forced internal convection heat dissipation is adopted for the plane between the central hole and the two tubes with a flow velocity of 0.1 m / s, and natural convection heat dissipation is adopted for other parts.

[0078] It can be seen from the simulation results (the initial temperature is 20 °C):

[0079] A. The highest temperatures after three discharges of the inductor are: 42.78 °C, 58.46 °C, 74.03 °C; the temperature after 20 min of natural cooling: 51.84 °C;

[0080] B. The highest temperatures after three discharges of the inner tube of the basic load resistor are: 35.90 °C, 44.97 °C, 58.36 °C; the temperature after 20 min of natural cooling: 47.11 °C;

[0081] C. The maximum temperatures of the outer tube of the basic load resistor after three discharges are: 31.18℃, 37.89℃, 47.52℃; the temperature after 20 minutes of natural cooling is: 35.82℃.

[0082] In actual measurement, the inductor is epoxy coated, and the inner tube of the basic load resistor is not easy to measure. The outer tube of the basic load resistor is used as the temperature sensor test point. The temperature rise of the outer tube of the basic load resistor is 27.52℃, and the maximum temperature rise of the impedance device is 54.03℃. The ratio of the temperature rise of the outer tube of the basic load resistor to the maximum temperature rise of the impedance device is 0.5.

[0083] It can be seen from the above data that under natural cooling conditions, the temperature of each part is within the controllable range.

[0084] Test the resistance module according to the above test method:

[0085] There are five typical values ​​of resistance and inductance for this resistor module. When the current is 1MA, a total of 24MJ of energy needs to be absorbed. The non-inductive resistor adopts 12 groups of resistor modules in parallel, which reduces the difficulty of designing a single load. The test object is 1 / 12 non-inductive resistor, which contains resistance and inductance, to verify the test plan and confirm the parameters. While ensuring the static parameters, the current test is verified at the same time. The load accuracy analysis table is as follows:

[0086]

[0087] Considering the actual inductance of the resistance module and the discharge current output waveform, the above inductance measurements were all measured using an LCR tester at a measurement frequency of 1K.

[0088] Considering that there are six combinations of non-inductive resistors in the field, two representative values ​​were selected for test and recording, and the other three values ​​were calculated based on them. The above table is updated and removed:

[0089] (1) Typical value: 1μH+3mΩ, corresponding to the theoretical value of the resistance module load is 12μH+36mΩ;

[0090] Measured value: 11.8μH+31.3mΩ, excluding busbar and internal connecting coaxial cable.

[0091] (2) Typical value: 5μH+3mΩ, the theoretical value of the resistance module load is 60μH+36mΩ;

[0092] Measured value: 53.3μH+32.97mΩ, excluding busbar and internal connecting coaxial cable.

[0093] According to the above measured values, the accuracy analysis table is reorganized as follows:

[0094]

[0095] According to the above measured values, it can be seen that the static parameters of the resistor module meet the requirements, and its overall accuracy is within the overall requirement range of 20%.

[0096] Conduct a dynamic current-carrying test on the resistor module:

[0097] According to the load condition of the resistor module, three groups of PFNs with a storage capacitor size of 9.47 mF are selected to be charged simultaneously and then discharged in parallel to the load to test the structural stability and temperature rise of the load.

[0098] Since there are a total of 6 typical values for the current load resistance and inductance combination, considering the actual test situation, the following two typical values are selected for testing.

[0099] Test 1

[0100] Test load condition 1: 11.8 μH + 31.3 mΩ, corresponding total typical value: 1 μH + 3 mΩ.

[0101] The positive and negative outputs are respectively connected to the busbar connection of the coaxial output of the three groups of PFNs through three cables. The first section of the tapped inductor is selected for the inductor connection as shown in the loop, focusing on testing the first section of the inductor coil. The PFN charging voltage starts from 500 V and gradually increases to 6500 V, and the output current and voltage waveforms are recorded as shown in Figure 10.

[0102] In the figure, 4 corresponds to the discharge current waveform (PEM current flexible probe, 1 V corresponds to 1 kA), and the other curve is the discharge voltage waveform (TEK P6015 high-voltage probe). It can be seen that the peak discharge current has reached 111 kA at this time, the current pulse width can reach 6 ms, and the actual charging voltage is 6.56 kV.

[0103]

[0104]

[0105] Conclusion: For this kind of load parameter situation, the peak current-carrying of 111 kA has reached 1.33 times the rated discharge current (note: the rated discharge current is divided into 12 equal parts according to 1 MA, and each part should be 84 kA). The total absorbed energy of the load in the continuous discharge test > 2 MA, and at this time the temperature rise is about 10 °C for the resistor, while the temperature of the inductor basically does not change, and the overall load structure meets the requirements.

[0106] Test 2

[0107] Test load condition 2: 53.3 μH + 32.97 mΩ, corresponding total typical value: 5 μH + 3 mΩ.

[0108] For the inductance connection, the tap connection of the third section of the tapped inductance is selected (the entire inductance coil is fully connected to the circuit). The connection is as shown in the figure above. The PFN charging voltage starts from 500V and gradually increases to 6800V. Record the output current and voltage waveforms as Figure 11 shown below.

[0109] In the figure, the curve corresponding to 1 is the discharge current waveform (PEM current flexible probe, 1V corresponds to 1kA), and the other curve is the discharge voltage waveform (TEK P6015 high-voltage probe). It can be seen that the peak discharge current has reached 84kA at this time. Because the entire inductance of the load connection is connected to the circuit at this time and the load becomes larger, the output current only reaches 84kA when charging to 6.8kV, the current pulse width can reach 12ms, and the actual charging voltage is 6.8kV.

[0110]

[0111]

[0112] Conclusion: For this kind of load parameter situation, the peak current-carrying capacity of 84kA has reached the rated discharge current (Note: The rated discharge current should be 84kA when dividing 1MA into 12 equal parts. Limited by the current situation of the platform, the large current was not increased further). The total absorbed energy of the load in the continuous discharge test > 2MA. At this time, the temperature rise of the resistor is about 10°C, and the temperature of the inductance basically does not change. The overall load structure meets the design requirements.

[0113] Please refer to Figures 12 - 14 , this embodiment also proposes a non-inductive resistor module, which includes a resistor module 10. The resistor module 10 includes an assembly frame 101 as the main body bearing structure. Four basic load resistors 102 are detachably fixed on the assembly frame 101. Insulating pads 103 are installed at the ends of the four basic load resistors 102. The insulating pads 103 are fixed on the assembly frame 101. Copper bars 104 for series connection with each other are provided at the front ends of the four basic load resistors 102.

[0114] The basic load resistor 102 includes an outer tube 1021 and an inner tube 1022 arranged coaxially. The outer tube 1021 is sleeved outside the inner tube 1022, and there is a gap between the inner wall of the outer tube 1021 and the outer wall of the inner tube 1022. The materials of the outer tube 1021 and the inner tube 1022 are both stainless steel.

[0115] The resistor module 10 is composed of four basic load resistors 102 connected in series in a rectangular array. The ends of the four basic load resistors 102 are all short-circuited through insulating pads 103, which can ensure that the overall volume of the resistor module is small enough.

[0116] Four basic load resistors 102 are arranged in series, each with a length of 1.6 meters. The resistance of a single resistor module 10 is 18 mΩ, and the material weight is about 60 kg. Then, 12 resistor modules 10 are connected in parallel again to make the resistance value 1.5 mΩ.

[0117] Since the models of the outer tube 1021 and the inner tube 1022 are different, and their weights and resistances are also different. When 24 MJ of energy is applied to the resistor unit, the temperature rises of them are calculated respectively. The temperature rise of the outer tube 1021 is 61.5 °C, the temperature rise of the inner tube 1022 is 76.3 °C, and the average temperature rise is 68.5 °C, meeting the requirements.

[0118] The specific dimensions of the resistor module 10 are: 340 mm * 430 mm * 1718 mm. At the same time, 12 resistor modules 10 are connected in parallel to form a non-inductive resistor. When the total current reaches 1.5 MA, the current passing through each unit is 125 kA. According to the selection of the above materials, the cross-sectional area reaches more than 500 mm2, which can fully meet the current-carrying requirement of 125 kA.

[0119] At the same time, for the resistor designed in the above way, a single stainless steel tube is arranged in a coaxial manner to minimize the inductance as much as possible. According to the simulation, using non-magnetic stainless steel as the basic load resistor, the parasitic inductance of a single resistor module 10 is 0.357 μH. Therefore, the parasitic inductance after 12 resistor modules 10 are connected in parallel is 0.03 μH, thus ensuring the consistency of the entire resistor structure. At the same time, it can also better meet the absorption of energy and reduce the temperature rise during testing.

[0120] The non-inductive resistor module provided in this embodiment is composed of four basic load resistors connected in series in a rectangular array, which can further reduce the influence of parasitic inductance, achieve an approximately non-inductive effect, and has the characteristics of simple structure, stable performance, safety and reliability, and convenient heat dissipation.

[0121] The non-inductive resistor module provided in this embodiment can withstand a high peak pulse current and has a low parasitic inductance. Moreover, the basic load adopts the coaxial layout of the inner tube and the outer tube of the rust steel pipe. This stainless steel pipe is a non-ferromagnetic material. The processed resistor not only meets the resistance value requirements, but also the coaxial structure arrangement makes the parasitic inductance smaller.

[0122] The above embodiments have introduced the present invention in detail. Specific examples are used in this article to elaborate on the principle and implementation of the present invention. The description of the above embodiments is only used to help understand the method and its core idea of the present invention; at the same time, for those of ordinary skill in the art, according to the idea of the present invention, there will be changes in the specific implementation and application scope. In summary, the content of this specification should not be construed as a limitation to the present invention.

Claims

1. A test method for a high-precision large-current-carrying micro-impedance resistor, characterized in that, It includes the following processes: S1. Select the basic load resistor in the resistor module to be tested; S2. Measure the resistance value and inductance value of the basic load resistor; S3. Conduct a current-carrying test on the basic load resistor, including: S31. Build a simulation model for the current-carrying test; S32. Simulate the actual discharge condition of the basic load resistor through the simulation model; S4. Build a test platform according to the simulation model, and connect the basic load resistor to the test platform for actual current-carrying test, including: S41. Control the charging voltage to rise slowly, and then trigger the discharge; S42. Obtain the trigger discharge condition and compare it with the actual discharge condition; If the comparison results are consistent, the structure of the basic load resistor is stable, without deformation and damage, and the overall structure is stable and reliable; If the comparison results are inconsistent, the basic load resistor has instability; S5. Conduct a temperature change test on the basic load resistor; If the overall temperature rise of the basic load resistor is controllable, the overall structure of the basic load resistor is stable and reliable; If the overall temperature rise of the basic load resistor is uncontrollable, the overall structure of the basic load resistor has instability; S6. Obtain the test results of the basic load resistor.

2. A non-inductive resistor module is subjected to a current-carrying test using the test method described in claim 1, characterized in that, It includes a resistor module (10), and the resistor module (10) includes an assembly frame (101) as the main body bearing structure. Four basic load resistors (102) are detachably fixed on the assembly frame (101). Insulating pads (103) are installed at the ends of the four basic load resistors (102), and the insulating pads (103) are fixed on the assembly frame (101). Copper bars (104) for series connection with each other are arranged at the front ends of the four basic load resistors (102).

3. The non-inductive resistor module according to claim 2, wherein: The basic load resistor (102) includes an outer tube (1021) and an inner tube (1022) arranged in a coaxial manner. The outer tube (1021) is sleeved outside the inner tube (1022), and there is a gap between the inner wall of the outer tube (1021) and the outer wall of the inner tube (1022).

4. The non-inductive resistor module according to claim 3, wherein: The materials of the outer tube (1021) and the inner tube (1022) are both stainless steel.

5. The non-inductive resistance module according to claim 2, wherein: The resistor module (10) is composed of four basic load resistors (102) connected in series in a rectangular array.

6. The non-inductive resistance module according to claim 2, wherein: The ends of the four basic load resistors (102) are all short-circuited through insulating pads (103).

7. The non-inductive resistance module according to claim 2, characterized in that: The specific dimensions of the resistor module (10) are: 340mm * 430mm * 1718mm, and the length of the basic load resistor (102) is 1.6 meters.

Images