Wafer carrier and semiconductor process apparatus

Abstract

The application provides a wafer carrying disc, which comprises a wafer tray, a lifting assembly, a carrying ring and a plurality of fingers, the wafer tray is used for carrying a wafer, the carrying ring is arranged around the wafer tray, the plurality of fingers are arranged on the carrying ring, the fingers have a supporting part and a limiting part fixedly arranged on the supporting part, the lifting assembly is used for driving the carrying ring to drive the plurality of fingers to lift or drive the carrying ring to drive the plurality of fingers to descend, the limiting part has a guiding slope towards the inner side, the diameter of a circle defined by the inner sides of the plurality of limiting parts is greater than the diameter of a circle defined by the inner sides of the plurality of supporting parts, and the plurality of limiting parts are used for guiding and limiting the wafer. In the application, the limiting part is fixedly arranged on the supporting part of the plurality of fingers of the wafer carrying disc, the limiting part can guide and limit the wafer from the periphery of the wafer, thereby ensuring the uniformity of wafer heating and improving the safety of semiconductor process. The application further provides a semiconductor process equipment.

Description

Technical Field

[0001] This invention relates to the field of semiconductor process equipment, and more specifically, to a wafer carrier disk and a semiconductor process equipment including the wafer carrier disk. Background Technology

[0002] Physical vapor deposition (PVD) is a process that uses physical methods under vacuum conditions to vaporize the surface of a material source into gaseous atoms or molecules, or partially ionize them into ions, and then deposits a thin film with specific functions onto a substrate surface through a low-pressure gas or plasma process. For example... Figure 1 The diagram shows a schematic of an existing metal magnetron sputtering device. Its process transfer path is as follows: the wafer is taken out from the foup on the load port 1, passes through the equipment front end module (EFEM) 2 and the load lock module 3, and is transferred to the degassing chamber 4 for degassing. Then it is transferred to the process module (PM) 6 for metal thin film deposition, and finally the wafer is transferred back to the foup.

[0003] The degassing chamber 4 heats the wafer to a specific temperature, removing water vapor and other volatile impurities adsorbed on its surface. The wafer enters the degassing chamber and is placed on a heating base. Because the heater is difficult to achieve perfect equilibrium, and different types of wafers have different coefficients of friction, the wafer is prone to slippage during the process, leading to uneven heating and incomplete removal of water vapor and volatile impurities in some areas. Severe slippage can even cause wafer transfer failure, posing a risk of fragmentation.

[0004] Therefore, how to avoid wafer slippage has become a technical problem that urgently needs to be solved in this field. Summary of the Invention

[0005] The present invention aims to provide a wafer carrier disk and a semiconductor process apparatus including the wafer carrier disk. The wafer carrier disk can prevent the wafer from sliding during transportation or process, ensure the uniformity of wafer heating, and improve the safety of semiconductor process.

[0006] To achieve the above objectives, as one aspect of the present invention, a wafer carrier is provided, comprising a wafer tray, a lifting assembly, a carrier ring, and a plurality of fingers. The wafer tray is used to carry a wafer. The carrier ring is disposed around the wafer tray. The plurality of fingers are disposed on the carrier ring and spaced apart circumferentially along the carrier ring. Each finger has a support portion and a limiting portion fixedly disposed on the support portion. The lifting assembly is used to drive the carrier ring to lift the plurality of fingers, so that the support portions of the plurality of fingers lift the wafer on the wafer tray, or to drive the carrier ring to lower the plurality of fingers to place the wafer on the wafer tray. The limiting portion has an inwardly facing guide slope. The pitch circle diameter defined by the inner side of the plurality of limiting portions is larger than the pitch circle diameter defined by the inner side of the plurality of support portions. The plurality of limiting portions are used to guide and limit the wafer.

[0007] Optionally, the guide slope includes a first guide segment, a second guide segment, and a third guide segment distributed sequentially from top to bottom. The second guide segment is a plane with an angle of 110°-120° with the horizontal plane. The first guide segment and the third guide segment are curved surfaces. The first guide segment is transitionally connected between the top surface of the limiting part and the second guide segment, and the third guide segment is transitionally connected between the inner side surface of the limiting part and the second guide segment.

[0008] Optionally, a temperature measuring and fixing hole is formed on the limiting part, and a first temperature measuring sensor is disposed in the temperature measuring and fixing hole. The first temperature measuring sensor is used to detect the actual temperature of the wafer surface in a non-contact manner.

[0009] Optionally, the first temperature sensor includes a housing, a rotating mechanism, and an infrared sensor. The housing is fixedly disposed in the temperature measurement fixing hole, the rotating mechanism is fixedly disposed in the housing, and the infrared sensor is rotatably disposed in the housing via the rotating mechanism. The rotating mechanism is used to drive the infrared sensor to rotate freely in the housing to change the temperature measurement position of the infrared sensor on the wafer surface.

[0010] Optionally, the rotating mechanism includes a housing and a driving unit. The infrared sensor is disposed in the housing. The housing has a temperature measuring opening on one side corresponding to the opening of the temperature measuring fixing hole. The infrared sensor is used to measure the temperature of the wafer through the temperature measuring opening. The side of the housing away from the temperature measuring opening is fixedly connected to the inner wall of the outer shell through the driving unit. The other sides of the housing are movably connected to the inner wall of the outer shell through elastic telescopic rods. The driving unit is used to drive the housing to make the infrared sensor rotate freely relative to the outer shell.

[0011] Optionally, a second temperature sensor is provided on the top of the support portion. The second temperature sensor is used to detect the actual temperature of the wafer at the position corresponding to the second temperature sensor by contact.

[0012] Optionally, a wiring hole is formed inside the finger, and a cable is disposed in the wiring hole. Both the first temperature sensor and the second temperature sensor output the detected actual temperature through the cable in the wiring hole.

[0013] As a second aspect of the present invention, a semiconductor process apparatus is provided, including a process chamber and a wafer carrier disk disposed inside the process chamber, wherein the wafer carrier disk is the wafer carrier disk described above.

[0014] Optionally, the semiconductor process equipment further includes a control module and a heater. The heater is used to heat the wafer supported on the wafer carrier disk. The control module is used to adjust the heating temperature of the heater according to the actual temperature detected by the first temperature sensor and / or the second temperature sensor, so as to maintain the temperature of the wafer at a preset temperature.

[0015] Optionally, the control module is located outside the process chamber, and a wiring hole is formed inside the finger. A cable is installed in the wiring hole, and both the first temperature sensor and the second temperature sensor are connected to the control module through the cable in the wiring hole. A corrugated tube is sleeved on the cable, one end of the corrugated tube is sealed to the first temperature sensor or the second temperature sensor, and the other end of the corrugated tube is sealed to the wall of the process chamber.

[0016] In the wafer carrier tray and semiconductor process equipment provided by the present invention, the wafer carrier tray includes multiple fingers arranged around the wafer tray. After being raised, the multiple fingers can jointly support the wafer through the support portion, thereby acting as ejector pins to realize the loading and unloading of the wafer. In addition, the support portion is also fixedly provided with limiting portions, which can limit the wafer from all sides, thereby preventing the wafer from sliding during transportation or process, thus ensuring the uniformity of wafer heating, reducing the risk of fragmentation, and improving the safety of semiconductor process. Furthermore, the limiting portions have inclined guide slopes that slope inward, so that when the wafer is about to contact the support portion but is not completely in the center position, it can slide down between the multiple limiting portions by means of the inclined guide slopes, realizing automatic alignment of the wafer and further ensuring the stability of the wafer position. Attached Figure Description

[0017] The accompanying drawings are provided to further illustrate the invention and form part of the specification. They are used together with the following detailed description to explain the invention, but do not constitute a limitation thereof. In the drawings:

[0018] Figure 1 This is a schematic diagram of an existing metal magnetron sputtering device;

[0019] Figure 2 This is a schematic diagram of the structure of the wafer carrier disk in the process chamber of a semiconductor process equipment according to an embodiment of the present invention;

[0020] Figure 3 This is a side view of the wafer carrier disk provided in an embodiment of the present invention;

[0021] Figure 4 This is a schematic diagram of the structure of the finger in the wafer carrier disk provided in an embodiment of the present invention;

[0022] Figure 5 This is a partial structural diagram of the finger in the wafer carrier disk provided in an embodiment of the present invention;

[0023] Figure 6 yes Figure 5 A sectional view of the middle structure;

[0024] Figure 7 This is a partial structural schematic diagram of the semiconductor process equipment provided in an embodiment of the present invention.

[0025] Explanation of reference numerals in the attached figures:

[0026] 100: Wafer tray 200: Finger

[0027] 210: Support part; 220: Limiting part

[0028] 221: Guide slope 230: Connecting part

[0029] 300: First temperature sensor; 310: Housing

[0030] 320: Rotating mechanism; 330: Infrared sensor

[0031] 400: Second temperature sensor; 500: Cable

[0032] 600: Bearing ring; 10: Wafer

[0033] 20: Process Chamber Detailed Implementation

[0034] The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit the present invention.

[0035] To address the aforementioned technical problems, as one aspect of the present invention, a wafer carrier disk is provided, such as... Figure 2 , Figure 3 As shown, the wafer carrier includes a wafer tray 100, a lifting assembly, a carrier ring 600, and multiple fingers 200. The wafer tray 100 is used to carry the wafer 10. The carrier ring 600 is arranged around the wafer tray 100, and the multiple fingers 200 are arranged on the carrier ring 600 and spaced circumferentially along the carrier ring 600. Figure 4 As shown, the finger 200 has a support portion 210 and a limiting portion 220 fixedly disposed on the support portion 210. The lifting assembly is used to drive the carrier ring 600 to lift the multiple fingers 200, so that the support portion 210 of the multiple fingers 200 lifts the wafer 10 on the wafer tray 100, or to drive the carrier ring 600 to lower the multiple fingers 200 to place the wafer 10 on the wafer tray 100. The limiting portion has a guide slope facing inward (i.e., inclined towards the center side of the wafer 10). The diameter of the pitch circle defined by the inner side of the multiple limiting portions 220 (i.e., the horizontal circle passing through the inner side of the multiple limiting portions 220) is larger than the diameter of the pitch circle defined by the inner side of the multiple support portions 210 (i.e., the horizontal circle passing through the inner side of the multiple support portions 210). The multiple limiting portions 220 are used to guide and limit the wafer 10.

[0036] Optionally, the wafer carrier can be used in a degassing chamber, i.e., heating the wafer 10 to sublimate impurities on the surface of the wafer 10 into a gaseous state for removal. It should be noted that the pitch circle diameter defined by the inner sides of the plurality of support portions 210 should be smaller than the diameter of the wafer 10 to be processed, to prevent the wafer 10 from falling between the multiple support portions 210. The pitch circle diameter defined by the inner sides of the plurality of limiting portions 220 should be larger than the diameter of the wafer 10 to be processed (preferably 2 mm larger than the wafer diameter) to ensure that the wafer 10 can fall normally onto the multiple support portions 210.

[0037] In this invention, the wafer carrier tray includes multiple fingers 200 arranged around the wafer tray 100. These fingers 200, when raised, collectively support the wafer 10 via a support portion 210, acting as ejector pins to facilitate loading and unloading of the wafer 10. Furthermore, a limiting portion 220 is fixedly provided on the support portion 210. This limiting portion 220 can limit the wafer 10 from all sides, preventing it from sliding during transport or processing, improving the stability of the wafer 10's position, ensuring uniform heating of the wafer 10, reducing the risk of fragmentation, and enhancing the safety of the semiconductor process. Additionally, the limiting portion 220 has an inwardly oriented guide slope 221. When the wafer is about to contact the support portion 210 but is not yet fully centered, it can slide down between the multiple limiting portions 220 using the inclined guide slope 221, achieving automatic alignment and further ensuring the stability of the wafer 10's position.

[0038] As an optional embodiment of the present invention, such as Figure 2 , Figure 3 As shown, the finger 200 also includes a connecting part 230 fixedly connected to the support part 210, and the multiple fingers 200 are fixedly connected to the bearing ring 600 through the connecting part 230.

[0039] As an optional embodiment of the present invention, such as Figure 4 As shown, the guide slope 221 includes a first guide section 221a, a second guide section 221b, and a third guide section 221c distributed sequentially from top to bottom. The second guide section 221b is a plane with an angle of 110°-120° with the horizontal plane. The first guide section 221a and the third guide section 221c are curved surfaces. The first guide section 221a is transitionally connected between the top surface 223 of the limiting part 220 and the second guide section 221b. The third guide section 221c is transitionally connected between the inner side surface 222 of the limiting part and the second guide section 221b. This prevents the wafer 10 from being scratched by the sharp edges and corners on the limiting part 220 and ensures the structural integrity of the wafer 10.

[0040] In an optional embodiment of the present invention, both the finger 200 and the bearing ring 600 are made of stainless steel.

[0041] During the research, the inventors of this invention discovered that different types of wafers 10 have different requirements for the heating temperature of the degassing process. If the temperature is too low, water vapor and other impurities will not be completely removed, while if the temperature is too high, it will affect the properties of the wafer surface material (e.g., resistivity). Therefore, it is necessary to ensure strict control of the wafer temperature in the degassing process. However, in the prior art, it is usually not possible to monitor the temperature of the wafer 10 surface in real time during the degassing process.

[0042] To solve this technical problem, as a preferred embodiment of the present invention, such as Figure 5 , Figure 6 As shown, a temperature measuring and fixing hole is formed on the limiting part 220, and a first temperature measuring sensor 300 is disposed in the temperature measuring and fixing hole. The first temperature measuring sensor 300 is used to detect the actual temperature of the surface of the wafer 10 in a non-contact manner.

[0043] Specifically, the first temperature sensor 300 can determine the actual temperature at a corresponding position on the surface of wafer 10 based on the principle of infrared thermometry and the thermal radiation energy emitted from that position. In this embodiment of the invention, a temperature-measuring fixing hole is formed on the limiting part 220 of the finger 200, and the first temperature sensor 300 is disposed in the temperature-measuring fixing hole. The first temperature sensor 300 can detect the actual temperature of the surface of wafer 10 in a non-contact manner, so that the heating temperature can be adjusted in real time according to the detection result of the first temperature sensor 300 during the degassing process, ensuring that the temperature of wafer 10 is controlled at the required level, thereby ensuring product yield.

[0044] To expand the detection range of the first temperature sensor 300 for wafer surface temperature, as a preferred embodiment of the present invention, such as... Figure 5 , Figure 6 As shown, the first temperature sensor 300 includes a housing 310, a rotating mechanism 320, and an infrared sensor 330. The housing 310 is fixedly disposed in the temperature measurement fixing hole, the rotating mechanism 320 is fixedly disposed in the housing 310, and the infrared sensor 330 is rotatably disposed in the housing 310 through the rotating mechanism 320. The rotating mechanism 320 is used to drive the infrared sensor 330 to rotate freely in the housing 310 to change the temperature measurement position of the infrared sensor 330 on the surface of the wafer 10.

[0045] In this embodiment of the invention, the first temperature sensor 300 includes a housing 310, a rotating mechanism 320, and an infrared sensor 330. The rotating mechanism 320 can drive the infrared sensor 330 inside the housing 310 to rotate, thereby changing the direction in which the infrared sensor 330 receives thermal radiation energy. This changes the area currently being detected by the first temperature sensor 300 on the surface of the wafer 10, thereby enabling real-time monitoring of the temperature at various locations on the surface of the wafer 10 and expanding the range of temperature detection area of ​​the first temperature sensor 300.

[0046] In an optional embodiment of the present invention, the rotating mechanism 320 includes a housing and a driving unit, and the infrared sensor 330 is disposed in the housing, with the housing on the side corresponding to the opening of the temperature measuring fixing hole (i.e., Figure 6 The left side of the wafer 10 has a temperature measuring opening, through which the infrared sensor 330 measures the temperature of the wafer 10. The housing is located on the side opposite to the temperature measuring opening (i.e., Figure 6 The right side of the housing is fixedly connected to the inner wall of the housing 310 via a drive unit, and accommodates the remaining sides of the housing (i.e., Figure 6 The upper and lower sides (and the front and rear sides perpendicular to the paper plane) are movably connected to the inner wall of the outer shell via elastic telescopic rods. The drive unit is used to drive the housing shell to make the infrared sensor 330 rotate freely relative to the outer shell 310.

[0047] In this embodiment of the invention, the driving unit can drive the housing to rotate the infrared sensor 330 freely relative to the outer casing 310 around the driving unit, thereby freely adjusting the orientation of the infrared sensor 330 and thus changing the position of the first temperature sensor 300 for temperature detection of the wafer 10 surface. Furthermore, the four sides of the housing surrounding the temperature measurement opening are each movably connected to the inner wall of the outer casing 310 via an elastic telescopic rod, effectively ensuring the stability of the orientation of the first temperature sensor 300 and thus ensuring the stability of the temperature detection results.

[0048] It should be noted that the side of the housing 310 corresponding to the opening of the temperature measuring hole is transparent to avoid obstructing the optical path of the infrared sensor 330 for temperature measurement. To prevent the infrared sensor 330 from contacting the gaseous environment in the semiconductor process, preferably, the side of the housing 310 corresponding to the opening of the temperature measuring hole has a transparent window structure to isolate the rotating mechanism 320 and the infrared sensor 330 from the external environment of the temperature measuring hole. More preferably, the housing of the rotating mechanism 320 also has a transparent window structure on the side corresponding to the opening of the temperature measuring hole, further preventing the infrared sensor 330 from contacting external gases.

[0049] As a preferred embodiment of the present invention, such as Figure 4 As shown, a second temperature sensor 400 is provided on the top of the support 210. The second temperature sensor 400 is used to detect the actual temperature of the wafer 10 and the corresponding location of the second temperature sensor 400 by contact.

[0050] In this embodiment of the invention, a second temperature sensor 400 is provided on the top of the support portion 210, thereby allowing the first temperature sensor 300 and the second temperature sensor 400 to divide the temperature monitoring task. Specifically, in the degassing process, the lifting assembly can drive multiple fingers 200 to rise and fall until the second temperature sensor 400 on the top of the support portion 210 is in contact with the wafer 10, such as... Figure 7 As shown, the heating wire of the heater built into the wafer tray 100 is usually divided into inner and outer rings. In order to ensure the adequacy and stability of the process, it is necessary to ensure that the temperature of the inner ring and the temperature of the outer ring are consistent with the set temperature.

[0051] Therefore, in this embodiment of the invention, the first temperature sensor 300 and the second temperature sensor 400 can respectively monitor the temperature of the central and edge regions of the wafer 10. Specifically, the second temperature sensor 400 contacts the corresponding position on the wafer 10 and detects the temperature of the outer ring (edge ​​region), while the first temperature sensor 300 rotates to receive infrared radiation energy emitted from the inner ring (central region) of the wafer and focuses the energy onto the photosensitive surface of the infrared sensor 330, converting the infrared radiation energy into a corresponding electrical signal to detect the temperature of the inner ring (central region). Finally, the control module of the process chamber (e.g., the degassing chamber) amplifies and processes the signal, converting it into temperature data of the inner ring of the wafer. Finally, the process chamber adjusts the heating temperature of the heater based on the comparison between the collected temperature data and the set temperature until the sensor temperature matches the set temperature, and maintains it at the set temperature to prevent temperature fluctuations during the degassing process and ensure complete degassing.

[0052] As an optional embodiment of the present invention, the second temperature sensor 400 is fixedly connected to the support portion 210 by a high-temperature resistant screw.

[0053] As an optional embodiment of the present invention, such as Figure 4 As shown, a wiring hole is formed inside the finger 200, and a cable 500 is installed in the wiring hole. The first temperature sensor 300 and the second temperature sensor 400 both output the detected actual temperature through the cable 500 in the wiring hole (that is, they are connected to the control module of the semiconductor process equipment through the cable 500).

[0054] In a preferred embodiment of the present invention, the control module is located outside the process chamber of the semiconductor process equipment. A corrugated tube is sleeved on the cable 500. One end of the corrugated tube is sealed to the corresponding temperature sensor (i.e., the first temperature sensor 300 or the second temperature sensor 400), and the other end of the corrugated tube is sealed to the wall of the process chamber to maintain the airtightness of the process chamber.

[0055] Optionally, the contact position between the second temperature sensor 400 and the support 210, as well as the connection between the first temperature sensor 300 and the bellows, are sealed by high-temperature resistant sealing rings (e.g., O-rings).

[0056] As a second aspect of the present invention, a semiconductor process apparatus is provided, including a process chamber 20 and a wafer carrier disk disposed inside the process chamber 20, wherein the wafer carrier disk is the wafer carrier disk provided in the embodiments of the present invention.

[0057] Optionally, the process chamber is a degassing chamber, that is, used to heat the wafer 10 so that impurities on the surface of the wafer 10 sublimate into a gaseous state to remove them.

[0058] As a preferred embodiment of the present invention, such as Figure 5 , Figure 6 As shown, a temperature measuring and fixing hole is formed on the limiting part 220, and a first temperature measuring sensor 300 is disposed in the temperature measuring and fixing hole. The first temperature measuring sensor 300 is used to detect the actual temperature of the surface of the wafer 10 in a non-contact manner. A second temperature measuring sensor 400 is disposed on the top of the support part 210. The second temperature measuring sensor 400 is used to detect the actual temperature of the wafer 10 at the corresponding position of the second temperature measuring sensor 400 in a contact manner.

[0059] The semiconductor process equipment also includes a control module and a heater. The heater is used to heat the wafer 10 carried on the wafer carrier disk. The control module is used to adjust the heating temperature of the heater according to the actual temperature detected by the first temperature sensor 300 and / or the second temperature sensor 400, so as to maintain the temperature of the wafer 10 at a preset temperature.

[0060] In this embodiment of the invention, the first temperature sensor 300 can detect the actual temperature of the inner ring of the wafer 10 in real time, and the second temperature sensor 400 can detect the actual temperature of the outer ring of the wafer 10 in real time. The control module can adjust the heating temperature in real time during the degassing process based on the actual temperature detected by the first temperature sensor 300 and / or the second temperature sensor 400, thereby ensuring that the temperature of the wafer 10 is controlled at the preset temperature, and thus ensuring product yield.

[0061] In a preferred embodiment of the present invention, the control module is located outside the process chamber 20, and a wiring hole is formed inside the finger 200. A cable 500 is installed in the wiring hole, and the temperature sensors on the finger 200 are all connected to the control module through the cable 500 in the wiring hole. A corrugated tube is sleeved on the cable 500. One end of the corrugated tube is sealed to the corresponding temperature sensor, and the other end of the corrugated tube is sealed to the wall of the process chamber to maintain the airtightness of the process chamber.

[0062] Optionally, the contact point between the second temperature sensor 400 and the support 210, as well as the connection point between the first temperature sensor 300 and the bellows, are sealed with high-temperature resistant sealing rings.

[0063] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A wafer carrier disk, characterized in that, The wafer carrier includes a wafer tray, a lifting assembly, a carrier ring, and multiple fingers. The wafer tray is used to hold and heat the wafer. The carrier ring surrounds the wafer tray, and the multiple fingers are disposed on the carrier ring at circumferential intervals. Each finger has a support portion and a limiting portion fixedly disposed on the support portion. The lifting assembly is used to drive the carrier ring to lift the multiple fingers, so that the support portions of the multiple fingers lift the wafer on the wafer tray, or to drive the carrier ring to lower the multiple fingers to place the wafer on the wafer tray. The limiting portion has an inwardly facing guide slope. The pitch circle diameter defined by the inner side of the multiple limiting portions is larger than the pitch circle diameter defined by the inner side of the multiple support portions. The multiple limiting portions are used to guide and limit the wafer. A temperature measuring and fixing hole is formed on the limiting part, and a first temperature measuring sensor is disposed in the temperature measuring and fixing hole; A second temperature sensor is provided on the top of the support portion; The first temperature sensor and the second temperature sensor monitor the temperature of the central region and the edge region of the wafer, respectively.

2. The wafer carrier disk according to claim 1, characterized in that, The guide slope includes a first guide segment, a second guide segment, and a third guide segment distributed sequentially from top to bottom. The second guide segment is a plane with an angle of 110°-120° with the horizontal plane. The first guide segment and the third guide segment are curved surfaces. The first guide segment is transitionally connected between the top surface of the limiting part and the second guide segment, and the third guide segment is transitionally connected between the inner side surface of the limiting part and the second guide segment.

3. The wafer carrier disk according to claim 1, characterized in that, The first temperature sensor is used to detect the actual temperature of the wafer surface in a non-contact manner.

4. The wafer carrier disk according to claim 3, characterized in that, The first temperature sensor includes a housing, a rotating mechanism, and an infrared sensor. The housing is fixedly disposed in the temperature measurement fixing hole, the rotating mechanism is fixedly disposed in the housing, and the infrared sensor is rotatably disposed in the housing via the rotating mechanism. The rotating mechanism is used to drive the infrared sensor to rotate freely in the housing to change the temperature measurement position of the infrared sensor on the wafer surface.

5. The wafer carrier disk according to claim 4, characterized in that, The rotating mechanism includes a housing and a driving unit. The infrared sensor is disposed in the housing. The housing has a temperature measuring opening on one side corresponding to the opening of the temperature measuring fixing hole. The infrared sensor is used to measure the temperature of the wafer through the temperature measuring opening. The side of the housing away from the temperature measuring opening is fixedly connected to the inner wall of the outer shell through the driving unit. The other sides of the housing are movably connected to the inner wall of the outer shell through elastic telescopic rods. The driving unit is used to drive the housing to make the infrared sensor rotate freely relative to the outer shell.

6. The wafer carrier disk according to any one of claims 3 to 5, characterized in that, The second temperature sensor is used to detect the actual temperature of the wafer at the location corresponding to the second temperature sensor by means of contact.

7. The wafer carrier disk according to claim 6, characterized in that, The finger has a wiring hole inside, and a cable is installed in the wiring hole. Both the first temperature sensor and the second temperature sensor output the detected actual temperature through the cable in the wiring hole.

8. A semiconductor process apparatus, comprising a process chamber and a wafer carrier disk disposed inside the process chamber, characterized in that, The wafer carrier disk is the wafer carrier disk according to any one of claims 1 to 7.

9. The semiconductor process equipment according to claim 8, characterized in that, The wafer carrier is the wafer carrier as described in any one of claims 3 to 6. The semiconductor process equipment further includes a control module and a heater. The heater is used to heat the wafer carried on the wafer carrier. The control module is used to adjust the heating temperature of the heater according to the actual temperature detected by the first temperature sensor and / or the second temperature sensor, so as to maintain the temperature of the wafer at a preset temperature.

10. The semiconductor process equipment according to claim 9, characterized in that, The control module is located outside the process chamber. A wiring hole is formed inside the finger, and a cable is installed in the wiring hole. The first temperature sensor and the second temperature sensor are both connected to the control module through the cable in the wiring hole. A corrugated tube is sleeved on the cable. One end of the corrugated tube is sealed to the first temperature sensor or the second temperature sensor, and the other end of the corrugated tube is sealed to the wall of the process chamber.

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