Method of manufacturing a module comprising an elastic wave device

Abstract

A method of manufacturing a module including an elastic wave device, including: a mounting step of mounting an elastic wave device and a semiconductor device on a packaging substrate; a resin covering step of covering the elastic wave device and the semiconductor device with a single material resin; a first resin curing step of curing a first resin of a portion of the resin covering the elastic wave device and leaving a gap between the packaging substrate and the elastic wave device; a second resin softening step of temporarily softening a second resin of a portion of the resin covering the semiconductor device after the first resin is cured and allowing the second resin to fill at least a portion of a space between the packaging substrate and the semiconductor device; and a second resin heat curing step of heat curing the second resin. Thus, a method of manufacturing a module including an elastic wave device that is suitable for reducing costs can be provided.

Description

Technical Field

[0001] This disclosure relates to a method for manufacturing a module including an elastic wave device. Background Technology

[0002] Japanese Patent Document 1 (JP2017-157922) illustrates a packaging method for an electronic device such as an elastic wave device, wherein the packaging method mounts a chip face down on a circuit board and covers the outer periphery of the chip with a sealing material.

[0003] For example, a Power Amplifier Module Integrated Duplexer (PAMiD), which mounts surface acoustic wave (SAW) filters, power amplifiers, and switches onto a substrate, is suitable for miniaturization and thinning due to its bare-chip mounting and module fabrication. However, while reserving space under the SAW filter chip, the space under other chips must be filled with underfill resin. Therefore, when using bare-chip mounting for all components, different resin sealing methods must be employed. In other words, separate resins must be formed to seal the SAW filter chip and to seal the other chips, thus preventing cost reduction. Summary of the Invention

[0004] In view of the above-mentioned problems, the present disclosure aims to provide a module containing an elastic wave device suitable for reducing costs.

[0005] This disclosure includes a method for manufacturing a module of an elastic wave device, comprising:

[0006] Installation steps: Install the elastic wave device and the semiconductor device on the packaging substrate;

[0007] Resin coating step: Coat the elastic wave device and the semiconductor device with a resin of a single material;

[0008] First resin curing step: Curing the portion of the resin covering the elastic wave device, leaving a gap between the encapsulation substrate and the elastic wave device;

[0009] The second resin softening step: After the first resin has cured, the second resin covering the semiconductor device is temporarily softened, and the second resin fills at least a portion of the space between the packaging substrate and the semiconductor device; and

[0010] Second resin thermosetting step: The second resin is thermoset.

[0011] In one embodiment of this disclosure, the first resin is cured by irradiation with a UV or electron beam.

[0012] In one embodiment of this disclosure, the UV light or the electron beam does not reach the second resin by means of a mask.

[0013] In one embodiment of this disclosure, the elastic wave device is provided with a functional element, which is exposed in the gap.

[0014] In one embodiment of the present disclosure, the step of removing at least a portion of the first resin formed on the elastic wave device is further included.

[0015] One embodiment of this disclosure further includes the step of removing at least a portion of the second resin formed on the semiconductor device.

[0016] In one embodiment of this disclosure, the semiconductor device includes a power amplifier and a switch, and the method of manufacturing the module including the elastic wave device further includes removing at least a portion of the second resin formed on the power amplifier, but not removing the second resin formed on the switch.

[0017] In one embodiment of this disclosure, the temperature at which the second resin is thermally cured is higher than the temperature at which the second resin is softened.

[0018] In one embodiment of this disclosure, the method for manufacturing the module comprising the elastic wave device further includes the step of forming a metal layer covering the resin covering the elastic wave device and the semiconductor device.

[0019] In one embodiment of this disclosure, the metal layer is formed by an electroless electroplating method.

[0020] In one embodiment of this disclosure, a metal layer fills openings in the resin covering the elastic wave device and the semiconductor device, and connects to the conductive pattern of the encapsulation substrate.

[0021] In one embodiment of this disclosure, the method for manufacturing the module comprising the elastic wave device further includes the step of forming a protective layer on the metal layer, wherein the upper surface of the protective layer is a flat surface.

[0022] In one embodiment of this disclosure, prior to the resin coating step, a step of providing a bottom-filling resin in the space between the packaging substrate and the semiconductor device is further included.

[0023] In one embodiment of this disclosure, the resin coating step, the first resin curing step, and the second resin softening step are performed in a vacuum environment.

[0024] In one embodiment of this disclosure, a through-hole is provided in the region of the packaging substrate located directly below the semiconductor device.

[0025] The beneficial effects of the present invention are as follows: According to this disclosure, a method for manufacturing a module containing an elastic wave device suitable for reducing costs can be provided. Attached Figure Description

[0026] Figure 1 This is a cross-sectional view of a module containing an elastic wave device.

[0027] Figure 2 This is a flowchart of a method for manufacturing a module that includes an elastic wave device.

[0028] Figure 3 This is a schematic diagram of a device mounted on a substrate.

[0029] Figure 4 This is a schematic diagram of the device covered with resin.

[0030] Figure 5 This is a schematic diagram showing how a portion of the resin is cured by irradiating it with UV light.

[0031] Figure 6 This is a schematic diagram showing the flow of resin between the device and the substrate.

[0032] Figure 7 (A) in the image is a photograph of resin that has been heated after being exposed to UV light.

[0033] Figure 7 (B) is a photograph of resin heated without UV irradiation.

[0034] Figure 8 This is a schematic diagram of the through-hole in the packaging substrate.

[0035] Figure 9 This is a schematic diagram showing the removal of a portion of the resin.

[0036] Figure 10 This is a schematic diagram of the protective layer. Detailed Implementation

[0037] The specific embodiments of the present invention will be described below with reference to the accompanying drawings. It should be noted that the same or equivalent parts in each figure are labeled with the same reference numerals. The descriptions of the same or equivalent parts will be appropriately simplified or omitted.

[0038] (Example)

[0039] Figure 1This is a cross-sectional view of module 10, which includes an elastic wave device, according to an embodiment. Module 10 includes an encapsulation substrate 12. According to one example, the encapsulation substrate 12 is a printed circuit board (PCB) substrate or a high-temperature co-fired ceramic (HTCC) substrate. According to other examples, the encapsulation substrate 12 is a low-temperature co-fired ceramic (LTCC) multilayer substrate formed of multiple dielectric layers. According to other examples, any substrate with wiring electrodes extending through the substrate can also serve as the encapsulation substrate. Figure 1 In the example, the packaging substrate 12 includes a substrate, an upper electrode, and a lower electrode electrically connected to the upper electrode via through-hole wiring, etc. Passive components such as capacitors and inductors can be disposed inside the packaging substrate 12.

[0040] The elastic wave device 14, semiconductor device 20, passive component 30, and semiconductor device 40 are mounted on the packaging substrate 12 via bumps 15, 21, 31, and 41, respectively. Bump 15 electrically connects the packaging substrate 12 to the elastic wave device 14. Bump 21 electrically connects the packaging substrate 12 to the semiconductor device 20. Bump 31 electrically connects the packaging substrate 12 to the passive component 30. Bump 41 electrically connects the packaging substrate 12 to the semiconductor device 40. Bumps 15, 21, 31, and 41 are, for example, gold bumps. According to other examples, bump 31 can also be replaced with solder. According to one example, the height of the bump is 10 μm to 50 μm.

[0041] According to one example, the elastic wave device 14 includes one of a filter, a bidirectional filter, or a dual filter, consisting of an elastic surface wave filter and a thin-film acoustic resonator. According to other examples, structures other than elastic wave devices may also be used. The elastic wave device 14 faces the packaging substrate 12 with its first main surface containing functional elements and is mounted on the packaging substrate 12. Figure 1In one example, the elastic wave device 14 has an interdigital transducer (IDT) 14a and a pair of reflectors as functional elements on its first main surface. The first main surface is patterned with wiring made of a suitable metal or alloy such as silver, aluminum, copper, titanium, or palladium. The IDT 14a and the reflectors are arranged in a manner that can excite elastic surface waves. According to other examples, the functional elements formed on the first main surface are a receiving filter and a transmitting filter. The receiving filter allows electrical signals of the desired frequency band to pass through. For example, the receiving filter has a trapezoidal filter formed by multiple series resonators and multiple parallel resonators. The transmitting filter allows electrical signals of the desired frequency band to pass through. For example, the transmitting filter has a trapezoidal filter formed by multiple series resonators and multiple parallel resonators.

[0042] The elastic wave device 14 includes, for example, a substrate formed of a piezoelectric single crystal such as lithium tantalate, lithium niobate, or quartz. According to other examples, the elastic wave device 14 includes a substrate formed of piezoelectric ceramic. According to other examples, the elastic wave device 14 includes a substrate formed by bonding a piezoelectric substrate and a support substrate. For example, the support substrate is a substrate made of sapphire, silicon, alumina, spinel, quartz, or glass.

[0043] The elastic wave device 14 is covered by resin 17. However, the first main surface of the elastic wave device 14 is not covered by the resin 17. A gap 16 exists between the elastic wave device 14 and the packaging substrate 12. The elastic wave device 14 also has a second main surface located on the opposite side of the first main surface. According to one example, at least a portion of the second main surface is not covered by the resin 17. A metal layer 18 is connected to the second main surface. The metal layer 18 has a first metal layer 18a disposed on the second main surface, a second metal layer 18b connected to the resin 17, and a third metal layer 18c connected to the packaging substrate 12.

[0044] According to one example, the semiconductor device 20 includes any one of a power amplifier, a low-noise amplifier, or a switch. Figure 1In the example, the semiconductor device 20 is a power amplifier. The semiconductor device 20 is covered by resins 22 and 23. Resin 22 is the resin that fills the space between the packaging substrate 12 and the semiconductor device 20. Resin 22 serves as an underfill resin. Resin 23 is the resin that covers the side surface and a portion of the upper surface of the semiconductor device 20. The semiconductor device 20 has a facing surface and a non-facing surface, the facing surface being the side facing the packaging substrate 12 and the non-facing surface being the side opposite to the facing surface. According to one example, at least a portion of the non-facing surface is not covered by resin. The non-facing surface is connected to a metal layer 28. The metal layer 28 has a first metal layer 28a disposed on the non-facing surface, a second metal layer 28b connected to the resin 23, and a third metal layer 28c connected to the packaging substrate 12.

[0045] According to one example, the passive element 30 is a capacitor. The passive element 30 is covered by resins 32 and 33. The resin 32 is the resin that fills the space between the encapsulation substrate 12 and the passive element 30. Therefore, the resin 32 serves as an underfill resin. The resin 33 covers the side and top surfaces of the passive element 30. A metal layer 38 is formed on the resin 33. The metal layer 38 has a first portion 38a that connects to the encapsulation substrate 12.

[0046] According to one example, the semiconductor device 40 includes any one of a power amplifier, a low-noise amplifier, or a switch. Figure 1 In this example, the semiconductor device 40 is a switch. The semiconductor device 40 is covered by resins 42 and 43. Resin 42 is the resin that fills the space between the packaging substrate 12 and the semiconductor device 40. Resin 42 serves as an underfill resin. Resin 43 is the resin that covers the sides and top surface of the semiconductor device 20. A metal layer 48 is formed on the resin 43.

[0047] The resin 17 leaves a gap 16 between the packaging substrate 12 and the functional element of the elastic wave device 14 while covering the elastic wave device 14. The resins 22 and 23 fill the space between the packaging substrate 12 and the semiconductor device 20 while covering the semiconductor device 20. The resins 32 and 33 fill the space between the packaging substrate 12 and the passive component 30 while covering the passive component 30. The resins 42 and 43 fill the space between the packaging substrate 12 and the semiconductor device 40 while covering the semiconductor device 40.

[0048] Resins 17, 22, 23, 32, 33, 42, and 43 can all be resins of the same material. That is, resins 17, 22, 23, 32, 33, 42, and 43 are formed in the same process, and therefore have the same composition (molecular structure) before and after curing. According to one example, resins 17, 22, 23, 32, 33, 42, and 43 have photocurability and thermosetting properties. According to one example, the thermosetting property of the resin refers to temporary softening at a first temperature higher than room temperature, and continued curing at the first temperature or at a second temperature higher than the first temperature. Various materials can be used as resin materials, listed below:

[0049] KPM500 dry film manufactured by Nippon Chemicals, based on epoxy resin

[0050] PSR-800 AUS410 and PSR-800 AUS SR1 are manufactured using epoxy resin-based solar inks.

[0051] LPA-22 is manufactured by Toray Industries, based on polyimide resin.

[0052] like Figure 1 As shown, the resin 17 covering the elastic wave device 14 is photocured and thermocured, while the remaining resins are thermocured. For example, the resins 22 and 42 filling the space between the encapsulation substrate 12 and the semiconductor devices 20 and 40 are thermocured.

[0053] As described above, all resins 17, 22, 23, 32, 33, 42, and 43 in the module 10 containing the elastic wave device are made of the same material. That is, resins 17, 22, 23, 32, 33, 42, and 43 are a single material (the same type of resin). This reduces material costs and the number of process steps compared to using multiple different types of resins. Therefore, the module 10 containing the elastic wave device is suitable for cost reduction. Furthermore, the gap 16 is formed between the packaging substrate 12 and the elastic wave device 14, and resins 22, 32, and 42 are provided as bottom-filling resins below other chips, thus providing a PAMID module 10 containing the elastic wave device. Contacting the metal layer 18 with the second main surface of the elastic wave device 14 helps improve heat dissipation. Contacting the metal layer 28 with the non-opposing surface of the semiconductor device 20 also helps improve heat dissipation. However, resin can also be formed on the entire second main surface of the elastic wave device 14 and a metal layer can be formed on the formed resin, and resin can also be formed on the entire non-opposing surface of the semiconductor device 20 and a metal layer can be formed on the formed resin. The metal layers 18, 28, 38, and 48 function as electromagnetic shielding layers.

[0054] exist Figure 1 In the example, the third metal layer 18c, the third metal layer 28c, and the first portion 38a are connected to the encapsulation substrate 12. The third metal layer 18c, the third metal layer 28c, and the first portion 38a are formed in an opening in the resin directly above the encapsulation substrate 12, thus connecting to the encapsulation substrate 12. At least a portion of the third metal layer 18c, the third metal layer 28c, and the first portion 38a can contact the conductive pattern of the encapsulation substrate 12. If the conductive pattern has the same potential as the ground potential of the elastic wave device 14, the metal layers 18, 28, 38, and 48 will also be at the ground potential. The grounded metal layers 18, 28, 38, and 48 function as electromagnetic shielding layers.

[0055] Figure 2 This is a flowchart illustrating a method for manufacturing a module including an elastic wave device. Referring to the flowchart, the following explanation is provided. Figure 1 A method for manufacturing a module including an elastic wave device. Steps Sa and Sb are steps of mounting multiple chips on the packaging substrate 12. Step Sa includes step S1 - mounting components, step S2 - solder reflow, and step S3 - cleaning. In step Sa, firstly, in step S1, solder paste is applied to predetermined positions on the packaging substrate 12. Then, chips are mounted on the solder paste. Next, a solder reflow process is performed in step S2, and a cleaning process is performed in step S3, thereby bonding the chips to the packaging substrate 12.

[0056] Step Sb includes step S4 - plasma cleaning and step S5 - component mounting. In step Sb, firstly, step S4 performs a plasma cleaning process on the packaging substrate 12. Therefore, in step S5, the chip bumps are attached to conductive adhesive disposed at predetermined positions on the packaging substrate 12. Step Sb, according to one example, is an Au-Au bonding (GGI bonding) process.

[0057] In step Sa, solder paste is used to mount the chip onto the packaging substrate, while in step Sb, conductive adhesive is used to mount the chip onto the packaging substrate. According to one example, the elastic wave device 14 is mounted onto the packaging substrate 12 in step Sb, and the semiconductor device 20, the passive component 30, and the semiconductor device 40 are mounted onto the packaging substrate 12 in step Sa. According to another example, the elastic wave device 14 is mounted onto the packaging substrate 12 in step Sa, and the semiconductor device 20, the passive component 30, and the semiconductor device 40 are mounted onto the packaging substrate 12 in step Sb. According to yet another example, all the chips can be mounted onto the packaging substrate 12 in either step Sa or step Sb, and the other step Sa or step Sb can be omitted. Figure 3 As shown, the elastic wave device 14, the semiconductor devices 20 and 40, and the passive component 30 are mounted on the packaging substrate 12 via steps Sa and Sb. According to one example, Figure 3 The packaging substrate 12 is a substrate arranged in a two-dimensional array of unit wiring substrates. In this case, the packaging substrate 12 may be provided with multiple unit wiring substrates.

[0058] Next, step Sc is performed. Step Sc is the resin formation step and includes step S6 - setting the resin layer, step S7 - vacuum coating, step S8 - partial UV irradiation, step S9 - resin flow and curing, and step S10 - laser removal of resin. First, in step S6, a resin layer is placed so that it spans the multiple mounted device chips. The resin layer is obtained by pressing liquid epoxy resin into a sheet shape. According to other examples, the resin layer can be a synthetic resin such as polyimide, which is different from epoxy resin. A protective film made of polyethylene terephthalate (PET) can be provided on the upper surface of the resin layer, or a base film made of polyester fiber can be provided on the lower surface of the resin layer. By placing the resin layer on the multiple device chips, the resin layer is temporarily fixed to the multiple device chips.

[0059] Next, in step S7, resin is provided between the chips by vacuum coating. For example, in a vacuum environment, the resin layer is gradually provided to the area between the chips by applying pressure toward the packaging substrate 12. The pressure toward the packaging substrate 12 can be applied to the resin layer by silicone gas-filled with compressed air, or by a rubber sheet. Figure 4 Example of the shape of resin after vacuum coating. Figure 4 In the process, resin 50 has a portion 50a located on the chip and a portion 50b provided between the chips.

[0060] Other methods can be used to provide resin to the chip space instead of vacuum coating. For example, a method known as hot rolling can be used. Hot rolling provides the resin to the upper surface of the device chip and fills the sides of the device chip and the upper surface of the packaging substrate 12 by means of an upper roller and a lower roller heated to at least the softening temperature of the resin layer.

[0061] Therefore, the elastic wave device 14, the semiconductor devices 20 and 40, and the passive element 30 are covered by a resin 50 of a single material. As described above, the resin 50 has photocurable and thermosetting properties.

[0062] Next, in step S8, the portion of the resin 50 covering the elastic wave device 14 is cured. Figure 5 This illustrates the curing of a portion of the resin 50. The resin 50 has a first resin 17' covering the elastic wave device 14. In step S8, the first resin 17' is irradiated with UV light. According to one example, a mask 56 with an opening only directly above the first resin 17' is used during UV irradiation. UV light from a UV irradiation device 58 is supplied to the resin 50 via the mask 56, in which the first resin 17' is irradiated, while other portions (the subsequent second resin) are not irradiated. Thus, only the first resin 17' in the resin 50 is selectively exposed. Through this selective exposure, the first resin 17' leaves a gap 16 between the encapsulation substrate 12 and the elastic wave device 14 and cures.

[0063] The curing method for the first resin 17' is not limited to UV irradiation. The first resin 17' can also be cured using various existing methods other than thermal curing. For example, the first resin 17' can be cured by irradiating it with an electron beam. According to one example, the first resin 17' can be irradiated with an electron beam using the mask 56. According to other examples, scanning can be performed while moving the platform that holds the packaging substrate, allowing the first resin 17' to be irradiated with an electron beam from an electron beam source without using the mask 56. According to other examples, electron beam scanning can also be performed simultaneously with the mask.

[0064] By allowing the first resin 17' to cure, it maintains its relationship with Figure 1 The resin has the same shape, while the functional elements of the elastic wave device 14 are kept exposed in the gap 16. According to one example, the gap 16 is a closed space.

[0065] Next, step S9 is performed. In step S9, a bottom filler adhesive is provided for the semiconductor device, etc., and then the second resin 51 is thermally cured. Specifically, in step S8, the uncured second resin is temporarily softened, and the second resin 51 is used to fill at least a portion of the space between the packaging substrate 12 and the semiconductor device. The resin 50 is softened by heating, and flows in the space between, for example, the semiconductor devices 20 and 40, the passive element 30, and the packaging substrate 12. Figure 6 As shown, resins 22, 32, and 42 with underfill adhesive function are formed by softening the second resin 51.

[0066] After the underfill adhesive is provided, the second resin 51 is heat-cured. The heat-curing method depends on the material of the resin. For example, one type of resin cures the second resin 51 by maintaining it at a temperature that softens the second resin (i.e., a first temperature) for a period of time. Another type of resin cures the second resin 51 at a second temperature higher than the first temperature. The heat treatment that softens and cures the second resin 51 also promotes the curing of the first resin 17'. In other words, the first resin 17' has its shape fixed during the aforementioned exposure process and is then fully cured during the heat treatment of the second resin 51. In other words, the first resin 17' is heat-cured by heat treatment. Heat treatment prevents or inhibits the flow of the first resin 17', thus preventing the resin from covering the IDT 14a.

[0067] During the softening or curing process of the resin, a hot press equipped with an upper mold and a lower mold applies pressure to the resin layer toward the encapsulation substrate 12. For example, the resin layer is heated to a primary softening temperature to form an underfill adhesive, and then heated to a curing temperature to fix its shape.

[0068] The above manufacturing process can be carried out by using resins that have both photocurable and thermosetting properties. Figure 7 The experiment shows the results of suppressing resin flow during heating with and without UV irradiation. In this experiment, a spacer with a thickness of approximately 20 μm and an area of ​​5 mm² was placed on the glass slide substrate. 2 A coverslip with a thickness of approximately 150 μm is used. The area of ​​the coverslip is larger than the area of ​​the gasket. A dry film resin is then applied to the coverslip at a bonding temperature of approximately 60°C. Two samples with the above structure are prepared, one with resin irradiated with UV light and the other without. The samples are then heated at 180°C for one minute. Figure 7 Image (A) shows a photograph of the suppressed flow of the resin in a sample irradiated by UV light. The darker areas represent the resin. From Figure 7 As can be understood in (A), directly beneath the near-square coverslip, although some resin flow occurs near the edge of the square, the flow is largely suppressed. On the other hand, Figure 7 Image (B) shows a photograph of the resin flow in a sample not exposed to UV light. The darker areas represent the resin. From Figure 7 (B) can be understood as having a large amount of resin flowing directly beneath the square-shaped coverslip.

[0069] Incidentally, if air is present in the space between the chip and the packaging substrate 12 during the thermosetting of the resin, it will hinder the filling of the space with underfill resin. Therefore, before covering the chip, which includes the elastic wave device 14 and the semiconductor devices 20 and 40, with resin, an underfill resin can be provided in the space between the packaging substrate 12 and the semiconductor devices 20 and 40. For example, if a thermosetting underfill resin is provided between the packaging substrate 12 and the semiconductor device 20, between the packaging substrate 12 and the passive component 30, and between the packaging substrate 12 and the semiconductor device 40, then the underfill resin and the second resin 51 can be softened simultaneously. In this way, resin can be filled in the space between the packaging substrate 12 and the chip.

[0070] According to other examples, the steps of covering the elastic wave device 14 and the semiconductor device with the resin, curing the first resin 17', and softening the second resin 51 can be performed in a vacuum environment. This allows the underfill adhesive to be provided in a space free of air between the chip and the packaging substrate 12, ensuring reliable underfill filling.

[0071] In another example, the packaging substrate 12 may have through-holes located directly beneath the chip where the underfill adhesive should be applied. For instance, through-holes may be provided in the packaging substrate 12 in a region directly beneath the semiconductor devices 20 and 40. Figure 8 This is a schematic diagram showing the through-hole 12h formed on the packaging substrate 12. When the resin is flowed to form the underfill adhesive, the air between the packaging substrate 12 and the chip can be discharged to the bottom of the packaging substrate 12 through the through-hole 12h, thereby reliably filling the underfill adhesive.

[0072] The provision of the underfill resin, the utilization of the vacuum environment, and the formation of the through-hole 12h described above can also be used in combination. For example, when the underfill resin and the second resin 51 are flowing, air between the packaging substrate 12 and the chip can be discharged through the through-hole 12h of the packaging substrate 12. The provision of the underfill resin, the utilization of the vacuum environment, and the formation of the through-hole described above can be used as auxiliary means when forming the underfill adhesive. Therefore, these methods can also be omitted.

[0073] Next, proceed to step S10. In step S10, a portion of the resin is removed. Figure 9 A schematic diagram showing the removal of a portion of the resin is shown. In this example, at least a portion of the resin formed on the elastic wave device 14 is removed to form opening h2, and at least a portion of the resin formed on the semiconductor device 20 is removed to form opening h4. Furthermore, openings h1, h3, and h5 are formed to expose the packaging substrate 12. In this example, at least a portion of the resin formed on the semiconductor device 20, which serves as a power amplifier, is removed, but the resin formed on the semiconductor device 40, which serves as a switch, is not removed. According to one example, the resin removal can be performed using a laser.

[0074] Next, step Sd is performed. Step Sd is the step of forming a metal layer and includes step S11 - applying adhesive tape to the back, step S12 - catalyst treatment, step S13 - replacing the adhesive tape on the back, step S14 - pretreatment, and step S15 - electroless nickel plating. For example, in step S11, adhesive tape is applied to the back of the packaging substrate 12, and in step S12, catalyst treatment is performed to induce an electroless plating reaction. Next, the adhesive tape is replaced in step S13, pretreatment is performed in step S14, and in step S15, for example, electroless nickel plating is formed. Therefore, a metal layer covering the resin is formed by electroless plating. Specifically, forming... Figure 1 Metal layers 18, 28, 38, and 48. According to one example, the metal layers are connected to the conductive pattern of the encapsulation substrate 12 via openings in the resin. The metal layers 18, 28, 38, and 48 can also be formed using methods other than electroless nickel plating. According to one example, electroless copper plating and electroless nickel plating can be used sequentially to form the metal layers. According to other examples, electroless silver plating and electroless nickel plating can be used sequentially to form the metal layers. According to yet another embodiment, Ti, sputtered Cu, and electroless nickel plating can be used sequentially to form the metal layers. These variations improve the adhesion between the resin and the metal layers compared to forming the metal layers with electroless nickel plating.

[0075] Next, step Se is performed. Step Se is the so-called post-processing and includes step S16 - cutting, step S17 - visual inspection, step S18 - electrical inspection, and step S19 - packaging. For example, in step S16, the packaging substrate 12 is cut. This divides the product. Next, visual inspection is performed in step S17, and the electrical properties of the product are inspected in step S18. In step S19, the products without problems are packaged. Thus, the process is completed. Figure 1 The fabrication of module 10, which includes an elastic wave device, is shown.

[0076] Based on an example, it is possible to Figure 1 A protective layer is formed on the upper surface of the structure. Figure 10 This is a schematic diagram of the protective layer 60. In this example, the step of forming the protective layer 60 on the metal layers 18, 28, 38, and 48 is added. According to one example, the upper surface of the protective layer 60 is generally flat. According to one example, the protective layer 60 is formed of an insulating material.

[0077] While at least one embodiment has been described above, it should be understood that various changes, modifications, or improvements will readily occur to those skilled in the art. These changes, modifications, or improvements are also part of this disclosure and fall within the scope of this invention.

[0078] It should be understood that the embodiments of the methods or apparatus described herein are not limited to the architecture and arrangement of the constituent components described above or illustrated in the accompanying drawings. The methods and apparatus can be installed or performed in other embodiments.

[0079] The embodiments described are for illustrative purposes only and are not intended to be limiting.

[0080] The descriptions and terms used in this disclosure are for illustrative purposes only and are not intended to be limiting. The use of "including," "possessing," "having," "comprise," and variations thereof here means to include the items listed below, their equivalents, and additional items.

[0081] The word “or”, or any word used in a description, may be interpreted as one, more than one, or all of the descriptive words.

[0082] The references to front, back, left, right, top, bottom, upper, lower, and horizontal and vertical are for ease of description and are not intended to limit the position and spatial configuration of any component in this invention. Therefore, the above description and drawings are merely exemplary.

Claims

1. A method for manufacturing a module including an elastic wave device, characterized in that... Include: Installation steps: Install the elastic wave device and the semiconductor device on the packaging substrate; Resin coating step: Coat the elastic wave device and the semiconductor device with a resin of a single material; First resin curing step: The first resin covering the portion of the elastic wave device is cured, leaving a gap between the encapsulation substrate and the elastic wave device; and the first resin is cured by irradiation with UV or electron beam; Second resin softening step: After the first resin is cured, the second resin covering the semiconductor device in the resin is temporarily softened, and the second resin fills at least a portion of the space between the packaging substrate and the semiconductor device. and Second resin thermosetting step: The second resin is thermoset.

2. The method for manufacturing a module including an elastic wave device according to claim 1, characterized in that: By means of a mask, the UV or the electron beam does not reach the second resin.

3. A method for manufacturing a module comprising an elastic wave device according to any one of claims 1 to 2, characterized in that: The elastic wave device is provided with functional elements, which are exposed in the gap.

4. The method for manufacturing a module including an elastic wave device according to claim 1, characterized in that... It also includes the step of removing at least a portion of the first resin formed on the elastic wave device.

5. The method for manufacturing a module including an elastic wave device according to claim 1, characterized in that... It also includes the step of removing at least a portion of the second resin formed on the semiconductor device.

6. The method for manufacturing a module including an elastic wave device according to claim 1, characterized in that: The semiconductor device includes a power amplifier and a switch, and the method of manufacturing the module including the elastic wave device further includes removing at least a portion of the second resin formed on the power amplifier, but not removing the second resin formed on the switch.

7. The method for manufacturing a module including an elastic wave device according to claim 1, characterized in that: The temperature at which the second resin is thermally cured is higher than the temperature at which the second resin is softened.

8. The method for manufacturing a module including an elastic wave device according to claim 1, characterized in that: The method of manufacturing the module including the elastic wave device further includes the step of forming a metal layer covering the resin on the resin covering the elastic wave device and the semiconductor device.

9. The method for manufacturing a module including an elastic wave device according to claim 8, characterized in that: The metal layer is formed by an electroless electroplating method.

10. The method for manufacturing a module including an elastic wave device according to claim 8, characterized in that: On the resin covering the elastic wave device and the semiconductor device, the metal layer fills the openings in the resin and connects to the conductive pattern of the packaging substrate.

11. The method for manufacturing a module including an elastic wave device according to claim 8, characterized in that: The method for manufacturing the module containing the elastic wave device further includes the step of forming a protective layer on the metal layer, wherein the upper surface of the protective layer is a flat surface.

12. The method for manufacturing a module including an elastic wave device according to claim 1, characterized in that: Prior to the resin coating step, the process also includes a step of providing bottom-filling resin in the space between the packaging substrate and the semiconductor device.

13. The method for manufacturing a module including an elastic wave device according to claim 1, characterized in that: The resin coating step, the first resin curing step, and the second resin softening step are performed in a vacuum environment.

14. The method for manufacturing a module including an elastic wave device according to claim 1, characterized in that: A through-hole is provided in the region of the packaging substrate located directly below the semiconductor device.

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