Semiconductor process equipment and preheating chamber thereof

Abstract

The present application discloses a semiconductor process equipment and a preheating chamber thereof, which relates to the field of semiconductor technology. The preheating chamber includes a chamber body, a wafer carrier, a transmission mechanism, a heating component, a driving mechanism and a sealing mechanism. A preheating chamber is provided in the chamber body. The wafer carrier includes a carrier plate, which is used to carry a wafer. The transmission mechanism is arranged in the preheating chamber, which is used to transport and support the wafer carrier. The heating component is movably connected to the chamber body, and the heating component includes a first electrode and a second electrode. The first electrode and the second electrode have opposite polarities, and the first electrode and the second electrode are used to be electrically connected to the carrier plate to heat the carrier plate. The driving mechanism is used to drive the first electrode and the second electrode to be electrically connected or disconnected with the carrier plate. The sealing mechanism is used to seal the chamber body and the heating component. The semiconductor process equipment includes the above-mentioned preheating chamber. In this way, the heat of the carrier plate is directly transferred to the wafer, the heat transfer efficiency is improved, and the time for heating the wafer to the process temperature is shortened.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and specifically relates to a semiconductor process equipment and a preheating chamber thereof. Background Art

[0002] Semiconductor process equipment such as plasma enhanced chemical vapor deposition (PECVD) is mainly used to deposit thin films on the surface of wafers. Before the deposition process is performed on the wafer, the semiconductor process equipment needs to heat the wafer to a specific process temperature within a certain period of time to ensure the uniformity of the deposition process.

[0003] In the related art, semiconductor process equipment includes a heating chamber, in which a first heater, a second heater and a carrier are provided, the first heater and the second heater are respectively located on both sides of the carrier, a chip is placed on the carrier, and the first heater and the second heater radiate heat to the carrier and the chip, thereby heating the chip to a specific process temperature.

[0004] However, the first heater and the second heater heat the wafer and the carrier at the same time. Since the volume of the carrier is larger than that of the wafer and the heat capacity of the carrier is larger than that of the wafer, the heating rate of the wafer is faster than that of the carrier. The wafer reaches the process temperature first and the carrier reaches the process temperature later, resulting in a longer overall heating time and low heating efficiency. Moreover, during the heating process, the temperature of the wafer is higher than that of the carrier. Since the wafer is in direct contact with the carrier, part of the heat of the wafer will be transferred to the carrier through heat conduction, resulting in a decrease in the heating rate of the wafer. Then, the heating time for the wafer to reach the process temperature will be further extended, thereby affecting the production line rhythm. Summary of the invention

[0005] The purpose of the embodiments of the present application is to provide a semiconductor process equipment and a preheating chamber thereof, which can solve the problem in the related art that the semiconductor process equipment takes a long time to heat the wafer.

[0006] In a first aspect, an embodiment of the present application provides a preheating chamber of a semiconductor process equipment, comprising:

[0007] A chamber body, wherein the chamber body is provided with a preheating chamber;

[0008] A wafer carrier device, the wafer carrier device comprising a carrier plate, the carrier plate is used to carry the wafer;

[0009] A transmission mechanism, the transmission mechanism is arranged in the preheating chamber and is used to transport and support the wafer carrier;

[0010] A heating assembly, the heating assembly is movably connected to the chamber body, the heating assembly comprises a first electrode and a second electrode, the first electrode and the second electrode have opposite polarities, and the first electrode and the second electrode are used to be electrically connected to the carrier to heat the carrier;

[0011] A driving mechanism, the driving mechanism is used to drive the first electrode and the second electrode to be electrically connected to or disconnected from the carrier;

[0012] A sealing mechanism is used to seal the chamber body and the heating component.

[0013] In a second aspect, an embodiment of the present application further provides a semiconductor process equipment, comprising the above-mentioned preheating chamber, wherein the preheating chamber is used to heat the wafer.

[0014] In the embodiment of the present application, the transmission mechanism can transfer the wafer carrier to a suitable position in the preheating chamber, and use the driving mechanism to drive the first electrode and the second electrode to move, so that the first electrode and the second electrode are both electrically connected to the carrier. In this process, the sealing mechanism seals the chamber body and the heating component, so the preheating chamber can maintain a vacuum state, avoiding the heat in the chamber body from diffusing outward and avoiding heat loss. The carrier generates heat when it is powered on. Since the carrier directly supports the wafer, the heat generated by the carrier is directly transferred to the wafer. Compared with the method of heating by air radiation, the heat transfer efficiency is improved, and the time for heating the wafer to the process temperature is shortened; moreover, the carrier directly serves as a heating component, and the heat of the wafer will not be reversely transferred to the carrier. The heating process of the carrier and the wafer is relatively synchronized, further improving the heating speed of the wafer and shortening the heating time, thereby speeding up the production line beat. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 is a schematic structural diagram of a semiconductor process equipment disclosed in an embodiment of the present application;

[0016] Figure 2 It is a schematic diagram of the cooperation between the wafer carrier device and the wafer disclosed in the embodiment of the present application;

[0017] Figure 3 is a top view of a semiconductor process equipment disclosed in an embodiment of the present application;

[0018] Figure 4 is a top view of the preheating chamber disclosed in the embodiment of the present application;

[0019] Figure 5 It is a partial structural schematic diagram of the preheating chamber disclosed in the embodiment of the present application;

[0020] Figure 6 It is a schematic diagram of the coordination of the heating assembly, driving mechanism and sealing mechanism disclosed in the embodiment of the present application.

[0021] Description of reference numerals:

[0022] 100 - chamber body; 110 - first side wall; 111 - first insulating gap; 120 - second side wall;

[0023] 200-slide carrier;

[0024] 210 - carrier plate; 211 - sheet material support surface; 212 - first side surface; 213 - second side surface; a - first plug-in slot;

[0025] 220-support column;

[0026] 230-Insulation board;

[0027] 240-support plate;

[0028] 300 - heating component; 301 - first heating component; 302 - second heating component; 310 - first electrode; 320 - second electrode;

[0029] 400 - sealing mechanism; 410 - first bellows; 420 - second bellows;

[0030] 500-driving mechanism; 510-first driving plate; 520-first insulating ring; 521-extension portion; 522-contraction portion;

[0031] 600-wafer;

[0032] 700-transmission mechanism; 710-connecting rod; 720-roller;

[0033] 810-film feeding chamber;

[0034] 820-process chamber;

[0035] 830- switch valve;

[0036] 900 - Power supply. DETAILED DESCRIPTION

[0037] The following will be combined with the drawings in the embodiments of the present application to clearly describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments in the present application belong to the scope of protection of this application.

[0038] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0039] The semiconductor process equipment and the preheating chamber thereof provided in the embodiments of the present application are described in detail below through specific embodiments and their application scenarios in combination with the accompanying drawings.

[0040] Please refer to Figure 1-Figure 6 The preheating chamber of the semiconductor process equipment disclosed in the present application includes a chamber body 100, a wafer carrier 200, a transmission mechanism 700, a heating component 300, a driving mechanism 500 and a sealing mechanism 400.

[0041] The chamber body 100 is provided with a preheating chamber, and the wafer carrier 200 includes a carrier 210, and the carrier 210 is used to carry the wafer 600. The carrier 210 has a sheet support surface 211, and the sheet support surface 211 is used to contact the wafer 600 to support the wafer 600; the carrier 210 is a heat-conducting structural member, that is, the carrier 210 has heat-conducting properties. Optionally, when the carrier 210 is in a horizontal placement state, the upper end surface of the carrier 210 can be used as the sheet support surface 211, and the wafer 600 is directly placed on the upper end surface of the carrier 210; when the carrier 210 is in a non-horizontal placement state, the carrier 210 can be provided with a groove, and the groove wall surface of the groove serves as the sheet support surface 211.

[0042] The transmission mechanism 700 is disposed in the preheating chamber, and is used to transport and support the wafer carrier 200. The wafer carrier 200 is transported to a suitable position in the preheating chamber by the transmission mechanism 700. Optionally, the transmission mechanism 700 may be a conveying chain, or other mechanisms capable of transporting the wafer carrier 200.

[0043] The heating assembly 300 is used to heat the carrier 210. The heating assembly 300 is movably connected to the chamber body 100. The heating assembly 300 includes a first electrode 310 and a second electrode 320. The first electrode 310 and the second electrode 320 have opposite polarities. The first electrode 310 and the second electrode 320 are used to be electrically connected to the carrier 210 to heat the carrier 210. In this embodiment, the carrier 210 is a conductive structural member, that is, the carrier 210 has conductive properties. The first electrode 310 and the second electrode 320 are used to contact the carrier 210 to achieve electrical connection. Figure 3 and Figure 4 As shown, the first electrode 310 is used to electrically connect to the positive electrode of the power source 900, and the second electrode 320 is used to electrically connect to the negative electrode of the power source 900. The first electrode 310, the second electrode 320 and the carrier 210 form a power-on loop. The carrier 210 directly generates heat when it is powered on, and the carrier 210 then transfers the heat to the wafer 600. The first electrode 310 and the positive electrode of the power source 900, and the second electrode 320 and the negative electrode of the power source 900 can be electrically connected through wires. Moreover, the first electrode 310 and the second electrode 320 are movably connected to the chamber body 100, respectively.

[0044] Specifically, an opening can be set in the cavity wall of the chamber body 100, and the first electrode 310 and the second electrode 320 directly pass through the opening and can move relative to the opening; the first electrode 310 and the second electrode 320 can also be directly set in the chamber body 100, and a separate mounting component is set on the inner wall of the chamber body 100, and the mounting component can be slidably connected to the first electrode 310 and the second electrode 320 respectively. There is no restriction on the connection form of the first electrode 310 and the second electrode 320.

[0045] In this solution, the electrical connection between the first electrode 310 and the second electrode 320 and the carrier 210 is achieved based on the movement of the first electrode 310 and the second electrode 320. The first electrode 310 and the second electrode 320 can be manually pushed to move. However, the manual action is very likely to cause a risk of electric shock. Moreover, the movement speed of the first electrode 310 and the second electrode 320 is slow, which will delay the power-on time of the carrier 210.

[0046] The driving mechanism 500 can solve the above problems. The driving mechanism 500 is used to drive the first electrode 310 and the second electrode 320 to be electrically connected or disconnected with the carrier 210. In other words, during the movement of the first electrode 310 and the second electrode 320, when the first electrode 310 and the second electrode 320 are in contact with the carrier 210, the first electrode 310 and the second electrode 320 can be electrically connected with the carrier 210, and when the first electrode 310 and the second electrode 320 are separated from the carrier 210, the first electrode 310 and the second electrode 320 can be disconnected from the carrier 210. Optionally, the driving mechanism 500 can be a motor, a linear drive, or a driving member such as a cylinder that can drive the first electrode 310 and the second electrode 320 to move. In this way, the driving mechanism 500 drives at least one of the first electrode 310 and the second electrode 320 to move, avoids manual force, avoids the risk of electric shock, and at the same time increases the movement speed of at least one of the first electrode 310 and the second electrode 320, shortening the power-on time of the carrier 210.

[0047] The sealing mechanism 400 is used to seal the chamber body 100 and the heating assembly 300 .

[0048] In this embodiment, the transmission mechanism 700 can transfer the wafer carrier 200 to a suitable position of the preheating chamber, and use the driving mechanism 500 to drive the first electrode 310 and the second electrode 320 to move, so that the first electrode 310 and the second electrode 320 are both electrically connected to the carrier 210. In this process, the sealing mechanism 400 seals and connects the chamber body 100 and the heating assembly 300, so the preheating chamber can maintain a vacuum state, preventing the heat in the chamber body 100 from diffusing outward and preventing heat loss. The combination of the above mechanisms can make the wafer 600 reach the process temperature in a short time, and make the wafer 600 have good temperature uniformity.

[0049] The carrier 210 generates heat when powered on, which avoids the process of heat transfer to the carrier 210. Moreover, since the carrier 210 is in direct contact with the chip 600, the heat is directly transferred from the carrier 210 to the chip 600. Compared with the heating method through air radiation, the heat transfer efficiency is improved, so the time for the chip 600 to be heated to the process temperature is shortened; moreover, the carrier 210 directly serves as a heating component, and the heat of the chip 600 will not be transferred back to the carrier 210. The heating process of the carrier 210 and the chip 600 is relatively synchronized, which further improves the heating speed of the chip 600, shortens the heating time, and ensures the normal production line rhythm.

[0050] In the solution of the present application, the wafer carrier 200 includes a plurality of carriers 210 and a plurality of support columns 220. The plurality of carriers 210 are stacked and arranged. The support columns 220 are arranged between two adjacent carriers 210 to support the carriers 210. Specifically, the support columns 220 are used to support the carriers 210 located at the upper end thereof. In actual application, the carriers 210 are arranged at intervals in the vertical direction, such as Figure 2 and Figure 5 As shown, a plurality of support pillars 220 may be disposed between two adjacent carriers 210 , and the sheet support surface 211 of each carrier 210 may contact a plurality of wafers 600 , and the plurality of wafers 600 may be disposed at intervals.

[0051] In the case where there is only one carrier 210, in order to ensure that a sufficient number of wafers 600 are supported, the area of ​​the sheet support surface 211 of the carrier 210 needs to be large enough, and thus the volume of the carrier 210 is also large, and the heat capacity is also large. As a result, when the carrier 210 is heated, since the heat dissipation of the edge area of ​​the carrier 210 is higher than that of the central area of ​​the carrier 210, it is easy for the temperature of the central area to be higher than that of the edge area, resulting in a temperature difference, and there are also differences in the degree of heating of different wafers 600, thereby affecting the process effect.

[0052] Arranging a plurality of carriers 210 can reduce the area of ​​the sheet supporting surface 211 of each carrier 210, and can also reduce the volume of each carrier 210. In this way, when the carrier 210 is heated, the distance between the edge area and the center area of ​​the same carrier 210 is reduced, and the heat dissipation of the edge area and the center area is basically the same, so the temperature of the edge area and the center area tends to be consistent, thereby ensuring the process effect.

[0053] In this embodiment, the carrier 210 is a graphite plate. When the carrier 210 is electrically connected to the first electrode 310 and the second electrode 320, the carrier 210 is energized, and the carrier 210 can directly generate heat as a heating resistor. Based on this situation, the support column 220 can be an insulating structural member, that is, the support column 220 is made of insulating material to avoid electrical connection between two adjacent carriers 210 through the support column 220 when power is turned on, which affects the process. Therefore, the support column 220 has insulating properties.

[0054] In an optional embodiment, if Figure 2As shown, the wafer carrier 200 may further include a supporting plate 240, the supporting plate 240 is provided with a supporting surface for the carrier, and along the arrangement direction of the carriers 210, the supporting surface for the carrier contacts the carrier 210 at the bottom. Specifically, in the arrangement direction of the carriers 210, the carrier 210 at the bottom is the second carrier, and the supporting plate 240 faces away from the wafer 600 on the second carrier. Moreover, the supporting plate 240 is an insulating structural member, that is, the supporting plate 240 is made of insulating material and has insulating properties. In this way, the supporting member separates the second carrier from the transmission mechanism 700, so as to prevent the second carrier from contacting the metal parts of the transmission mechanism 700 when the power is on and causing a short circuit.

[0055] In this embodiment, the insulating material may be ceramic, mica, polyimide or other high temperature resistant materials.

[0056] In an optional embodiment, the wafer carrier 200 further includes a heat preservation plate 230, and the heat preservation plate 230 is arranged above the carrier 210 at the top along the arrangement direction of the carriers 210. Figure 5 As shown, in the arrangement direction of the carrier plates 210, the carrier plate 210 at the top is the first carrier plate, the heat preservation plate 230 faces the sheet support surface 211 of the first carrier plate, and the heat preservation plate 230 is a heat-conducting structural member, that is, the heat preservation plate 230 is made of a heat-conducting material and has heat-conducting properties. In a specific embodiment, a support column 220 is also provided between the heat preservation plate 230 and the first carrier plate, and the number of the support columns 220 can be multiple, and the heat preservation plate 230 is supported by the support columns 220.

[0057] Moreover, the number of the heating components 300 is at least two, including a first heating component 301 and a second heating component 302. The first electrode 310 and the second electrode 320 of the first heating component 301 are used to heat the carrier 210, and the first electrode 310 and the second electrode 320 of the second heating component 302 are used to heat the heat preservation plate 230. When the wafer carrier 200 is transferred to the position to be heated, the driving mechanism 500 drives the first electrode 310 and the second electrode 320 of the first heating component 301 to move relative to the chamber body 100 to contact with the carrier 210 to heat the carrier 210, and the driving mechanism 500 can drive the first electrode 310 and the second electrode 320 of the second heating component 302 to move relative to the chamber body 100 to contact with the heat preservation plate 230 to heat the heat preservation plate 230. In this embodiment, both the carrier plate 210 and the heat preservation plate 230 can be graphite plates, that is, both the carrier plate 210 and the heat preservation plate 230 can be heated by electricity. When the carrier plate 210 contacts the first heating component 301, the carrier plate 210 is directly energized to generate heat. When the heat preservation plate 230 contacts the second heating component 302, the heat preservation plate 230 is directly energized to generate heat. Of course, the first heating component 301 and the second heating component 302 can also use other methods to heat the carrier plate 210 and the heat preservation plate 230 respectively.

[0058] The heat preservation plate 230 is arranged above the first carrier plate, which can prevent the heat loss of the wafer 600 on the first carrier plate; moreover, the heat preservation plate 230 is heated by the second heating assembly 302, and the heat preservation plate 230 creates a high temperature environment for the first carrier plate, so that the first carrier plate is in a high temperature environment, and further prevents the heat loss of the first carrier plate and the wafer 600 thereon. Similarly, of the two adjacent carrier plates 210, the carrier plate 210 located at the top also has the effect of preventing heat loss, and also has thermal conductivity, so that the carrier plate 210 located at the bottom is in a high temperature environment, so that the heat loss of the carrier plate 210 and the wafer 600 located at the bottom can be prevented.

[0059] In this embodiment, there are multiple first electrodes 310 and multiple second electrodes 320, and multiple carriers 210. Each carrier 210 is electrically connected to one first electrode 310 and one second electrode 320. When the wafer carrier 200 is transferred to the position to be heated, the driving mechanism 500 drives each first electrode 310 and each second electrode 320 to move relative to the chamber body 100 to contact each carrier 210 in a one-to-one correspondence. In this way, each carrier 210 is heated by the corresponding heating assembly 300, that is, multiple heating assemblies 300 perform heating work at the same time. Compared with the solution of heating each carrier 210 at the same time by one heating assembly 300, the heating efficiency is improved, the heating speed of each carrier 210 is improved, and the time for the wafer 600 to heat up to the process temperature is shortened.

[0060] In an optional embodiment, if Figure 4 As shown, the carrier 210 has a first side surface 212 and a second side surface 213 opposite to each other, and the sheet support surface 211 is located between the first side surface 212 and the second side surface 213, and the sheet support surface 211 is connected to the first side surface 212 and the second side surface 213 respectively. The first electrode 310 is used to move relative to the chamber body 100 to be electrically connected to the first side surface 212 under the drive of the driving mechanism 500, and the second electrode 320 is used to move relative to the chamber body 100 to be electrically connected to the second side surface 213 under the drive of the driving mechanism 500. Specifically, when the carrier device 200 is transferred to the position to be heated, the driving mechanism 500 drives the first electrode 310 to move relative to the chamber body 100 to contact the first side surface 212, and at the same time, the driving mechanism 500 drives the second electrode 320 to move relative to the chamber body 100 to contact the second side surface 213. In a specific embodiment, the carrier 210 is a rectangular plate, and the first side surface 212 and the second side surface 213 are disposed opposite to each other along the length direction of the carrier 210 ; the first side surface 212 and the second side surface 213 may also be disposed opposite to each other along the width direction of the carrier 210 .

[0061] The first electrode 310 is in contact with the first side surface 212, and the second electrode 320 is in contact with the second side surface 213. The openings for the first electrode 310 and the second electrode 320 to pass through can be directly provided on the side wall of the chamber body 100, so as to facilitate the movable connection of the first electrode 310 and the second electrode 320. Moreover, since the first electrode 310 and the second electrode 320 are located between the upper end surface and the lower end surface, the heat generated by the partial energization between the first electrode 310 and the second electrode 320 can flow to the upper end surface and the lower end surface more evenly, thereby improving the temperature rise uniformity of the carrier 210.

[0062] In this embodiment, the first side surface 212 is provided with a first plugging slot a, and the first plugging slot a is used to plug the first electrode 310, and the second side surface 213 is provided with a second plugging slot, and the second plugging slot is used to plug the second electrode 320. Optionally, the end of the first electrode 310 can be inserted into the first plugging slot a, and the first electrode 310 cooperates with the first plugging slot a, and the end of the second electrode 320 can be inserted into the second plugging slot, and the second electrode 320 cooperates with the second plugging slot. Such a configuration avoids the first electrode 310 or the second electrode 320 directly contacting the surface of the carrier 210 and causing poor contact. The structure of the plugging slot and the electrode matching ensures good contact, thereby ensuring the normal power-on heating process of the carrier 210.

[0063] In an optional embodiment, if Figure 6 As shown, the chamber body 100 has a first side wall 110 and a second side wall 120 which are arranged opposite to each other. The first side wall 110 and the second side wall 120 are parallel to the transmission direction of the wafer carrier 200, and the first side surface 212 is arranged opposite to the first side wall 110, and the second side surface 213 is arranged opposite to the second side wall 120. The first side wall 110 is provided with a first opening, and the first opening is used to penetrate the first electrode 310, that is, the first end of the first electrode 310 can extend into the chamber body 100 after passing through the first opening, and a first insulating gap 111 is provided between the first electrode 310 and the hole wall of the first opening; the second side wall 120 is provided with a second opening, and the second opening is used to penetrate the second electrode 320, that is, the first end of the second electrode 320 can extend into the chamber body 100 after passing through the second opening, and a second insulating gap is provided between the second electrode 320 and the hole wall of the second opening.

[0064] The first insulating gap 111 prevents the first electrode 310 from directly contacting the first sidewall 110 and causing a short circuit; similarly, the second insulating gap prevents the second electrode 320 from directly contacting the second sidewall 120 and causing a short circuit.

[0065] In this embodiment, there are multiple first openings and multiple second openings, each first opening corresponds to each first electrode 310, and each second opening corresponds to each second electrode 320. In this way, any first electrode 310 or any second electrode 320 is prevented from contacting the chamber body 100 and causing a short circuit.

[0066] In this embodiment, the driving mechanism 500 is insulated from the first electrode 310 and the second electrode 320. Specifically, a spacer may be provided between the first electrode 310, the second electrode 320 and the driving mechanism 500, and the spacer is an insulating structural member, that is, the intermediate member is an insulating material and has insulating properties. The driving mechanism 500 is separated from the first electrode 310 and the driving mechanism 500 from the second electrode 320 by the spacer, so as to avoid the first electrode 310, the second electrode 320 and the driving mechanism 500 from contacting and short-circuiting, thereby ensuring the normal conduct of the power-on process of the carrier 210.

[0067] In an optional embodiment, the driving mechanism 500 includes a first driving plate 510 and a first insulating ring 520, the first driving plate 510 is provided with a third opening, the first insulating ring 520 is provided at the third opening, and the first electrode 310 is insulated and connected to the first driving plate 510 through the first insulating ring 520. The first insulating ring 520 may be a ceramic ring. Specifically, Figure 6 As shown, the first electrode 310 passes through the third opening, the first insulating ring 520 is disposed between the first electrode 310 and the first driving plate 510, the outer wall of the first insulating ring 520 is fixedly connected and sealed with the third opening, and the inner wall of the first insulating ring 520 is fixedly connected and sealed with the first electrode 310. In this way, the first electrode 310 is prevented from contacting with the first driving plate 510 and causing a short circuit, thereby ensuring that the power-on process of the carrier 210 proceeds normally.

[0068] Optionally, the driving mechanism 500 further includes a second driving plate and a second insulating ring, the second driving plate is provided with a fourth opening, the second insulating ring is provided at the fourth opening, and the second electrode 320 is insulated and connected to the second driving plate through the second insulating ring. Among them, the second insulating ring can be a ceramic ring. Specifically, the second electrode 320 runs through the fourth opening, the second insulating ring is provided between the second electrode 320 and the second driving plate, the outer wall of the second insulating ring is fixedly connected and sealed to the hole wall of the fourth opening, and the inner wall of the second insulating ring is fixedly connected and sealed to the second electrode 320. In this way, the second electrode 320 is prevented from contacting with the second driving plate and short-circuiting, and the normal power-on process of the carrier 210 is ensured.

[0069] In this scheme, if Figure 5 and Figure 6As shown, the sealing mechanism 400 includes a first bellows 410 and a second bellows 420, and both the first bellows 410 and the second bellows 420 have telescopic properties. The first bellows 410 is sleeved outside the first electrode 310, and the first bellows 410 is located outside the chamber body 100. The first end of the first bellows 410 is connected to the outer wall of the first side wall 110, and the second end of the first bellows 410 is fixedly connected and sealed with the first driving plate 510 to achieve sealed communication between the first bellows 410 and the chamber body 100. Specifically, the first bellows 410 is sealed and connected to the chamber body 100 through the first opening, the first end of the first bellows 410 is connected to the first opening, and the second end of the first bellows 410 is blocked by the first driving plate 510, thereby achieving sealing. Moreover, the first bellows 410 is telescopic with the movement of the first electrode 310.

[0070] The first opening is sealed by the first bellows 410, which can retain the first insulating gap 111 to prevent the chamber body 100 from contacting the first electrode 310, and can also keep the interior of the chamber body 100 in a vacuum sealed state to prevent the heat in the chamber body 100 from diffusing outward through the first opening and thus preventing heat loss.

[0071] The first bellows 410 and the first drive plate 510, the first drive plate 510 and the first insulating ring 520, and the first insulating ring 520 and the first electrode 310 can be fixedly connected by welding, bonding, etc., and the sealing performance is ensured during the connection process. In a specific embodiment, the first insulating ring 520 and the first drive plate 510 are insulated and connected by brazing; moreover, both ends of the first bellows 410 are provided with a first flange, the first end of the first bellows 410 is connected to the outer wall of the first side wall 110 through the first flange, and the second end of the first bellows 410 is connected to the first drive plate 510 through the first flange.

[0072] Optionally, the second bellows 420 is sleeved outside the second electrode 320, the second bellows 420 is located outside the chamber body 100, the first end of the second bellows 420 is connected to the outer wall of the second side wall 120, and the second end of the second bellows 420 is fixedly connected and sealed with the second drive plate to achieve sealed communication between the second bellows 420 and the chamber body 100. Specifically, the second bellows 420 is sealed and connected to the chamber body 100 through the second opening, the first end of the second bellows 420 is connected to the second opening, and the second end of the second bellows 420 is blocked by the second drive plate to achieve sealing. Moreover, the second bellows 420 expands and contracts with the movement of the second electrode 320.

[0073] The second opening is sealed by the second bellows 420, which can not only retain the second insulating gap to prevent the chamber body 100 from contacting the second electrode 320, but also keep the interior of the chamber body 100 in a vacuum sealed state to prevent the heat in the chamber body 100 from diffusing outward through the second opening and thus preventing heat loss.

[0074] The second bellows 420 and the second drive plate, the second drive plate and the second insulating ring, and the second insulating ring and the second electrode 320 can be fixedly connected by welding, bonding, etc., and the sealing performance is guaranteed during the connection process. In a specific embodiment, the second insulating ring and the second drive plate are insulated by brazing; and both ends of the second bellows 420 are provided with a second flange, the first end of the second bellows 420 is connected to the outer wall of the second side wall 120 through the second flange, and the second end of the second bellows 420 is connected to the second drive plate through the second flange.

[0075] In this embodiment, if Figure 6 As shown, the first insulating ring 520 and the second insulating ring both include an extension portion 521 and a contraction portion 522, the extension portion 521 and the contraction portion 522 are an integrally formed structure, the cross-sectional area of ​​the first port of the contraction portion 522 is greater than the cross-sectional area of ​​the second port of the contraction portion 522, the first port of the contraction portion 522 is connected to the extension portion 521, and the outer wall of the extension portion 521 is fixedly connected and sealed to the hole wall of the third opening, and the second port of the contraction portion 522 is fixedly connected and sealed to the first electrode 310 or the second electrode 320.

[0076] By combining the driving mechanism 500 with the sealing mechanism 400, the sealing performance of the chamber body 100 can be ensured, and the insulation connection between the heating assembly 300 and the driving mechanism 500 can be ensured. In addition, there is no need to separately set up a blocking component, which reduces the number of components.

[0077] In addition, the driving mechanism 500 also includes a driving source, which is connected to the first driving plate 510, and the driving source drives the first driving plate 510, so that the first driving plate 510 moves, and then the first driving plate 510 drives the first electrode 310 to move. Similarly, the driving source can be connected to the second driving plate, and the driving source drives the second driving plate, so that the second driving plate moves, and then the second driving plate drives the second electrode 320 to move. The driving source can be the motor, cylinder and other components described above. In a specific embodiment, the first driving plate 510 can be an integrated structure, which is respectively connected to each first electrode 310, and the second driving plate can be an integrated structure, which is respectively connected to each second electrode, or the number of the first driving plate 510 is multiple, and each first electrode 310 corresponds to the first driving plate 510 and the first insulating ring 520, and the number of the second driving plate is multiple, and each second electrode 320 also corresponds to the second driving plate and the second insulating ring.

[0078] In a specific embodiment, there are multiple driving sources, each first electrode 310 and each second electrode 320 corresponds to a driving source, the first electrode 310 is driven by the corresponding driving source, and the second electrode 320 is driven by the corresponding driving source; or, when each first electrode 310 is connected through an integrated first driving plate 510, each first electrode 310 is driven by one driving source, and when each second electrode 320 is connected through an integrated second driving plate, each second electrode 320 is driven by another driving source, that is, each first electrode 310 moves synchronously, and each second electrode 320 moves synchronously. In this way, multiple components are driven to move by one driving mechanism 500, saving power sources; moreover, the synchronization of each first electrode 310 is improved, and the synchronization of each second electrode 320 is improved, ensuring that each carrier 210 can be powered on and off at the same time.

[0079] In an optional embodiment, if Figure 3 As shown, the transmission mechanism 700 includes a plurality of connecting rods 710 and a plurality of rollers 720. The chamber body 100 has a first side wall 110 and a second side wall 120 arranged opposite to each other. The first end of the connecting rod 710 is connected to the first side wall 110, and the second end of the connecting rod 710 is connected to the second side wall 120. The plurality of connecting rods 710 are arranged at intervals. Optionally, the extending direction of the connecting rod 710 is perpendicular to the first side wall 110 and the second side wall 120, and the arrangement direction of the plurality of connecting rods 710 is parallel to the first side wall 110 and the second side wall 120. The connecting rod 710 is provided with a plurality of rollers 720, and the rollers 720 are connected to the connecting rod 710 in a rolling manner, and are used to transport the slide device 200, that is, the rollers 720 are connected to the chamber body 100 through the connecting rod 710. Optionally, a bearing seat is provided at the connection between the rollers 720 and the connecting rod 710, and the bearing seat is used to provide rolling support for the rollers 720.

[0080] When the wafer carrier 200 is transported, the rollers 720 can be driven to roll by the driving member, and the plurality of rollers 720 are all in contact with the supporting plate 240 of the wafer carrier 200. When the rollers 720 roll, the wafer carrier 200 is driven to move. In this way, the plurality of rollers 720 are supported by the plurality of connecting rods 710, and the plurality of rollers 720 are supported at different positions of the wafer carrier 200, so as to improve the stability of the wafer carrier 200 during the transport process.

[0081] Based on the preheating chamber disclosed in the embodiment of the present application, Figure 1 and Figure 3 As shown, an embodiment of the present application further discloses a semiconductor process equipment, and the disclosed semiconductor process equipment includes the preheating chamber described in any of the above embodiments.

[0082] Optionally, the semiconductor process equipment also includes a film feeding chamber 810 and a process chamber 820. The film feeding chamber 810 is arranged at the inlet end of the preheating chamber, and the process chamber 820 is arranged at the outlet end of the preheating chamber. Switch valves 830 are provided between the film feeding chamber 810 and the chamber body 100 and between the preheating chamber and the process chamber 820.

[0083] In actual application, first, the wafer 600 enters the wafer feeding chamber 810. When a heating process is required, the switch valve 830 between the preheating chamber and the wafer feeding chamber 810 is opened, and the wafer 600 is transported to the preheating chamber; the wafer 600 is heated in the preheating chamber, and after the temperature of the wafer 600 reaches the process temperature, the switch valve 830 between the preheating chamber and the process chamber 820 is opened, and the wafer 600 can be transported to the process chamber 820 for a deposition process. The switch valve 830 can accurately control the transfer process of the wafer 600 between different chambers, thereby ensuring the sealing of each chamber.

[0084] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A preheating chamber of a semiconductor process equipment, characterized in that: include: A chamber body (100), wherein a preheating chamber is provided in the chamber body (100); A wafer carrier (200), the wafer carrier (200) comprising a carrier plate (210), the carrier plate (210) being used to carry a wafer (600); A transmission mechanism (700), the transmission mechanism (700) being arranged in the preheating chamber and used for transmitting and supporting the wafer carrier device (200); a heating component (300), the heating component (300) being movably connected to the chamber body (100), the heating component (300) comprising a first electrode (310) and a second electrode (320), the first electrode (310) and the second electrode (320) having opposite polarities, the first electrode (310) and the second electrode (320) being used to be electrically connected to the carrier (210) to heat the carrier (210); a driving mechanism (500), the driving mechanism (500) being used to drive the first electrode (310) and the second electrode (320) to be electrically connected to or disconnected from the carrier (210); A sealing mechanism (400), the sealing mechanism (400) being used to seal the chamber body (100) and the heating component (300); The driving mechanism (500) can drive the first electrode (310) and the second electrode (320) to move relative to the chamber body (100) until they are in contact with the carrier (210).

2. The preheating chamber according to claim 1, characterized in that: The carrier plate (210) has a first side surface (212) and a second side surface (213) opposite to each other. The first electrode (310) is used to move relative to the chamber body (100) to be electrically connected to the first side surface (212) under the drive of the driving mechanism (500). The second electrode (320) is used to move relative to the chamber body (100) to be electrically connected to the second side surface (213) under the drive of the driving mechanism (500).

3. The preheating chamber according to claim 2, characterized in that: The first side surface (212) is provided with a first plugging slot (a), and the first plugging slot (a) is used to plug the first electrode (310); the second side surface (213) is provided with a second plugging slot, and the second plugging slot is used to plug the second electrode (320).

4. The preheating chamber according to claim 2, characterized in that: The chamber body (100) comprises a first side wall (110) and a second side wall (120) which are arranged opposite to each other, wherein the first side wall (110) and the second side wall (120) are parallel to the transmission direction of the wafer carrier (200); the first side surface (212) is arranged opposite to the first side wall (110), and the second side surface (213) is arranged opposite to the second side wall (120); A first opening is provided on the first side wall (110), the first opening is used to penetrate the first electrode (310), and a first insulating gap (111) is provided between the first electrode (310) and the hole wall of the first opening; A second opening is provided on the second side wall (120), the second opening is used to penetrate the second electrode (320), and a second insulating gap is provided between the second electrode (320) and the hole wall of the second opening.

5. The preheating chamber according to claim 4, characterized in that: The driving mechanism (500) comprises a first driving plate (510) and a first insulating ring (520), the first driving plate (510) being provided with a third opening, the first insulating ring (520) being arranged at the third opening, and the first electrode (310) being insulated and connected to the first driving plate (510) via the first insulating ring (520); The driving mechanism (500) further comprises a second driving plate and a second insulating ring, the second driving plate being provided with a fourth opening, the second insulating ring being arranged at the fourth opening, and the second electrode (320) being insulated and connected to the second driving plate via the second insulating ring.

6. The preheating chamber according to claim 5, characterized in that: The sealing mechanism (400) comprises a first bellows (410) and a second bellows (420); The first bellows (410) is sleeved outside the first electrode (310), the first end of the first bellows (410) is connected to the outer wall of the first side wall (110), and the second end of the first bellows (410) is fixedly connected to the first driving plate (510) and sealed; The outer wall of the first insulating ring (520) is fixedly connected to the third opening and sealed, and the inner wall of the first insulating ring (520) is fixedly connected to the first electrode (310) and sealed; The second bellows (420) is sleeved outside the second electrode (320), the first end of the second bellows (420) is connected to the outer wall of the second side wall (120), and the second end of the second bellows (420) is fixedly connected to the second driving plate and sealed; The outer wall of the second insulating ring is fixedly connected to and sealed with the fourth opening, and the inner wall of the second insulating ring is fixedly connected to and sealed with the second electrode (320).

7. The preheating chamber according to claim 1, characterized in that: The wafer carrier device (200) comprises a plurality of carrier plates (210) and a plurality of support columns (220), wherein the plurality of carrier plates (210) are stacked and arranged, and the support columns (220) are arranged between two adjacent carrier plates (210) for supporting the carrier plates (210).

8. The preheating chamber according to claim 1, characterized in that: The number of the first electrode (310) and the number of the second electrode (320) are both plural, the number of the carrier plates (210) are plural, and each of the carrier plates (210) is electrically connected to one of the first electrodes (310) and one of the second electrodes (320).

9. The preheating chamber according to claim 1, characterized in that: The transmission mechanism (700) includes a plurality of connecting rods (710) and a plurality of rollers (720); the chamber body (100) has a first side wall (110) and a second side wall (120) that are arranged opposite to each other; the first end of the connecting rod (710) is connected to the first side wall (110); the second end of the connecting rod (710) is connected to the second side wall (120); and the plurality of connecting rods (710) are arranged at intervals; a plurality of rollers (720) are arranged on the connecting rod (710); the rollers (720) are rollingly connected to the connecting rod (710) for conveying the wafer carrier (200).

10. A semiconductor process equipment, characterized in that: The preheating chamber comprises the preheating chamber according to any one of claims 1 to 9, wherein the preheating chamber is used to heat the wafer (600).

11. The semiconductor process equipment according to claim 10, characterized in that: The semiconductor process equipment further comprises a film feeding chamber (810) and a process chamber (820), wherein the film feeding chamber (810) is arranged at the inlet end of the preheating chamber, and the process chamber (820) is arranged at the outlet end of the preheating chamber, and switch valves (830) are arranged between the film feeding chamber (810) and the preheating chamber, and between the preheating chamber and the process chamber (820).

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