Display panel and display device

Abstract

The application discloses a display panel and a display device. The display panel comprises a substrate, a gate electrode, an insulating barrier layer and an active layer. The active layer is arranged on the side of the gate electrode away from or close to the substrate. The insulating barrier layer is arranged between the gate electrode and the active layer. The band gap of the material of the insulating barrier layer is greater than the work function of the material of the gate electrode. In the application, the insulating barrier layer is arranged between the active layer and the gate electrode, and the band gap of the material of the insulating barrier layer is set to be greater than the work function of the material of the gate electrode, so that the electrons of the gate electrode are prevented from jumping to the active layer, the threshold voltage is prevented from being positively shifted, and the performance of the display panel is improved.

Description

Technical Field

[0001] This application relates to the field of display technology, specifically to a display panel and a display device. Background Technology

[0002] In current thin-film transistor (TFT) display panels, there are typically an active layer, a gate, and a gate insulating layer disposed between the active layer and the gate. The bandgap of the gate insulating layer material is usually smaller than the work function of the gate material. Furthermore, the bandgap of the gate insulating layer material will further decrease under long-term continuous operation. As a result, the bandgap of the gate insulating layer material differs significantly from the work function of the gate material, causing electrons from the gate to continuously jump to the active layer interface. This leads to a positive shift in the threshold voltage and affects the performance of the TFT display panel. Summary of the Invention

[0003] This application provides a display panel and a display device to solve the problem of electrons transitioning from the gate to the active layer.

[0004] This application provides a display panel, including:

[0005] Substrate;

[0006] A gate is disposed on the substrate;

[0007] An insulating barrier layer is disposed on the gate, wherein the bandgap of the material of the insulating barrier layer is greater than the work function of the material of the gate; and

[0008] An active layer disposed on the insulating barrier layer; and...

[0009] Optionally, in some embodiments of this application, the material of the gate includes one or more combinations of Cu, Al, Ag, Mo, Ti, Sn and Zn, and the bandgap of the material of the insulating barrier layer is greater than 5.1 eV.

[0010] Optionally, in some embodiments of this application, the insulating barrier layer is made of one or a combination of diamond, aluminum nitride, and boron nitride.

[0011] Optionally, in some embodiments of this application, the material of the insulating barrier layer includes an atomic diffusion blocking material and an electron blocking material. The electron blocking material includes one or more combinations of diamond, aluminum nitride, and boron nitride, and the atomic diffusion blocking material includes at least one of silicon oxide and aluminum oxide.

[0012] Optionally, in some embodiments of this application, the insulating barrier layer is composed of a mixture of the atomic diffusion blocking material and the electron blocking material, wherein the atomic diffusion blocking material accounts for 10%-95% of the mass of the material in the insulating barrier layer.

[0013] Optionally, in some embodiments of this application, the insulating barrier layer includes an electron blocking layer and an atomic diffusion blocking layer, wherein the electron blocking layer and the atomic diffusion blocking layer are sequentially stacked on the gate, or the atomic diffusion blocking layer and the electron blocking layer are sequentially stacked on the gate, wherein the electron blocking layer is made of the electron blocking material, and the atomic diffusion blocking layer is made of the atomic diffusion blocking material.

[0014] Optionally, in some embodiments of this application, the active layer is made of amorphous silicon, and the display panel further includes a gate insulating layer, which is disposed between the gate and the insulating barrier layer, or between the insulating barrier layer and the active layer.

[0015] Optionally, in some embodiments of this application, the active layer is made of oxide semiconductor, and the display panel further includes a gate insulating layer disposed between the insulating barrier layer and the active layer.

[0016] Optionally, in some embodiments of this application, the display panel further includes an ohmic contact layer and source / drain electrodes. The ohmic contact layer is disposed on the substrate. The active layer includes a semiconductor portion and conductive portions disposed on both sides of the semiconductor portion. The orthographic projection of the semiconductor portion on the substrate overlaps with the orthographic projection of the gate electrode on the substrate. The ohmic contact layer is located on the conductive portions, and the source / drain electrodes are disposed on the ohmic contact layer.

[0017] Accordingly, this application also provides a display device, which includes a backlight module and a display panel as described above, wherein the backlight module is connected to the display panel.

[0018] This application discloses a display panel and a display device. The display panel includes a substrate, a gate, an insulating barrier layer, and an active layer. The gate, the insulating barrier layer, and the active layer are stacked on the substrate, and the insulating barrier layer is located between the gate and the active layer. The bandgap of the insulating barrier layer material is greater than the work function of the gate material. In this application, an insulating barrier layer is disposed between the active layer and the gate, and the bandgap of the insulating barrier layer material is set to be greater than the work function of the gate material, thereby preventing electrons from the gate from transitioning to the active layer, thus preventing a positive shift in the threshold voltage, and thereby improving the performance of the display panel. Attached Figure Description

[0019] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 This is a schematic diagram of the first structure of the display panel provided in the embodiments of this application.

[0021] Figure 2 This is a schematic diagram of a second structure of the display panel provided in an embodiment of this application.

[0022] Figure 3 This is a schematic diagram of the electronic transitions between the gate, the insulating barrier layer, and the gate insulating layer provided in the embodiments of this application.

[0023] Figure 4 This is a schematic diagram of the structure of the display device provided in the embodiments of this application. Detailed Implementation

[0024] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. Furthermore, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application. In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, specifically the drawing directions in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In this application, "reaction" can be a chemical reaction or a physical reaction.

[0025] This application provides a display panel and a display device. The display panel includes a substrate, a gate, an insulating barrier layer, and an active layer. The gate, the insulating barrier layer, and the active layer are stacked on the substrate, and the insulating barrier layer is located between the gate and the active layer. The bandgap of the material of the insulating barrier layer is greater than the work function of the material of the gate.

[0026] In this application, an insulating barrier layer is provided between the active layer and the gate, and the bandgap of the material of the insulating barrier layer is set to be greater than the work function of the material of the gate, thereby preventing electrons from the gate from jumping to the active layer, thereby preventing the threshold voltage from shifting positively, and thus improving the performance of the display panel.

[0027] The following is a detailed explanation:

[0028] Please see Figure 1 and Figure 2 This application provides a display panel 10, which includes a substrate 100, a gate 200, an insulating barrier layer 300, a gate insulating layer 400, an active layer 500, an ohmic contact layer 600, and source / drain electrodes 700.

[0029] A gate 200 is disposed on the substrate 100. The work function of the material of the gate 200 is less than 5.1 eV. Specifically, the work function of the material of the gate 200 can be 3.2 eV, 3.8 eV, 4.5 eV, 4.8 eV, or 5.1 eV, etc.

[0030] In one embodiment, the material of the gate 200 includes one or more combinations of Cu, Al, Ag, Mo, Ti, Sn, and Zn. Specifically, Cu has a work function of 4.5-5.1 eV, Al has a work function of 4.28 eV, Ag has a work function of 4.26 eV, Mo has a work function of 4.6 eV, Ti has a work function of 3.84 eV, Sn has a work function of 4.42 eV, and Zn has a work function of 4.42 eV.

[0031] An insulating barrier layer 300 is disposed on the substrate 100 and the gate 200, and the bandgap Eg of the material of the insulating barrier layer 300 is greater than the work function of the material of the gate 200.

[0032] A gate insulating layer 400 is disposed on an insulating barrier layer 300. The bandgap Eg of the material of the gate insulating layer 400 is smaller than the bandgap Eg of the material of the insulating barrier layer 300, and smaller than the work function of the material of the gate 200.

[0033] In one embodiment, the bandgap Eg of the material of the gate insulating layer 400 is 4.0-5.0 eV. Specifically, the bandgap Eg of the material of the gate insulating layer 400 can be 4.0 eV, 4.3 eV, 4.8 eV, or 5.0 eV, etc.

[0034] In one embodiment, the gate insulating layer 400 is made of silicon nitride. In this application, using silicon nitride to form the gate insulating layer 400 can prevent the active layer 500 from being corroded by water and oxygen, thereby improving the performance of the display panel 10.

[0035] In this application, an insulating barrier layer 300 is provided between the gate insulating layer 400 and the gate 200, and the bandgap Eg of the material of the insulating barrier layer 300 is set to be greater than the work function of the material of the gate 200. This forms a potential barrier between the gate 200 and the active layer 500, which can prevent the Si-H bonds in the silicon nitride in the gate insulating layer 400 from breaking under long-term continuous operation. This would prevent the bandgap Eg of the gate insulating layer 400 from decreasing, thus preventing electrons from the gate 200 from jumping to the active layer 500, thereby avoiding a positive shift in the threshold voltage and a decrease in the on-state current. This prevents the display panel 10 from exhibiting problems such as screen flickering, screen distortion, or uneven color display, thereby improving the performance of the display panel 10. Simultaneously, the insulating barrier layer 300 is provided in the display panel 10 so that it can form an insulating layer with the gate insulating layer 400.

[0036] In one embodiment, the insulating barrier layer 300 is a transparent insulating barrier layer 300. In this application, the insulating barrier layer 300 is set to be a transparent insulating barrier layer 300, so that when the display panel 10 is applied in a backlight product, the light emission rate of the display panel 10 can be improved, thereby improving the display effect of the display panel 10.

[0037] In one embodiment, the bandgap Eg of the material of the insulating barrier layer 300 is greater than 5.1 eV. Specifically, the bandgap Eg of the material of the insulating barrier layer 300 can be 5.1 eV, 5.8 eV, 6.5 eV, 7.1 eV, 7.3 eV, 7.8 eV, or 8.6 eV, etc.

[0038] In this application, the bandgap Eg of the insulating barrier layer 300 material is set to be greater than 5.1 eV, which can further prevent electrons from the gate 200 from transitioning to the active layer 500, thereby avoiding a positive shift in the threshold voltage and thus avoiding a decrease in the on-state current, thereby improving the performance of the display panel 10.

[0039] In one embodiment, the bandgap Eg of the material of the insulating barrier layer 300 is greater than or equal to 5.3 eV. Specifically, the bandgap Eg of the material of the insulating barrier layer 300 can be 5.3 eV, 5.8 eV, 6.4 eV, 7.6 eV, 9.3 eV, or 10.1 eV, etc.

[0040] In this application, the bandgap Eg of the insulating barrier layer 300 is set to be greater than or equal to 5.3 eV, which can further prevent electrons from the gate 200 from transitioning to the active layer 500, thereby further avoiding a positive shift in the threshold voltage, further avoiding a decrease in the on-state current, and thus further improving the performance of the display panel 10.

[0041] In one embodiment, the insulating barrier layer 300 is made of an electron blocking material.

[0042] In one embodiment, the electron blocking material includes one or a combination of diamond, aluminum nitride (AlN), and boron nitride (BN). Diamond has a bandgap of 5.3 eV. AlN has a bandgap of 6.4 eV. BN has a bandgap of 6 eV.

[0043] In another embodiment, the insulating barrier layer 300 is made of an electron blocking material and an atomic diffusion blocking material. That is, the insulating barrier layer is formed by mixing the electron blocking material and the atomic diffusion blocking material. The bandgap of the electron blocking material and the atomic diffusion blocking material is greater than the work function of the material of the gate 200, meaning the bandgap of the insulating barrier layer 300 is greater than the work function of the material of the gate 200.

[0044] In this application, an atomic diffusion blocking material is added to the material of the insulating barrier layer 300, so that the insulating barrier layer 300 has the property of blocking water and oxygen. This allows the insulating barrier layer 300 to block the electrons of the gate 200 from transitioning to the active layer 500, while also preventing water and oxygen from eroding the active layer 500, thereby further improving the water and oxygen blocking performance of the display panel 10 and further ensuring the display effect of the display panel 10. At the same time, the insulating barrier layer 300 is provided in the display panel 10 so that the insulating barrier layer 300 can be reused as an additional gate insulating layer, forming an insulating layer together with the gate insulating layer 400.

[0045] In one embodiment, the atomic diffusion blocking material accounts for 10%-95% of the mass of the insulating barrier layer 300. Specifically, the mass percentage of the atomic diffusion blocking material in the insulating barrier layer 300 can be 10%, 15%, 20%, 25%, or 30%, etc. This can improve the water and oxygen barrier performance of the insulating barrier layer and further improve its electron blocking performance, thereby further improving the performance of the display panel.

[0046] In another embodiment, the insulating barrier layer 300 includes an electron blocking layer and an atomic diffusion blocking layer stacked together. The electron blocking layer is made of an electron blocking material. The atomic diffusion blocking layer is made of an atomic diffusion blocking material. The atomic diffusion blocking material includes at least one of silicon oxide and aluminum oxide. The electron blocking layer and the atomic diffusion blocking layer are stacked sequentially on the gate 200, or the atomic diffusion blocking layer and the electron blocking layer are stacked sequentially on the gate 200.

[0047] An active layer 500 is disposed on the gate insulating layer 400. The active layer 500 includes a semiconductor portion and conductive portions located on both sides of the semiconductor portion. The semiconductor portion is located above the gate 200.

[0048] In one embodiment, when the gate insulating layer 400 is formed using silicon nitride, the active layer 500 is a silicon-based active layer 500. The silicon-based layer includes amorphous silicon (a-Si) or polycrystalline silicon. In this application, when the gate insulating layer 400 is formed using silicon nitride, the active layer 500 is configured as a silicon-based active layer 500. Silicon nitride has good step coverage, high breakdown voltage, and reduces ESD risk, thereby improving device stability.

[0049] In another embodiment, the gate insulating layer 400 is disposed between the insulating barrier layer 300 and the active layer 500.

[0050] In another embodiment, the active layer 500 is an oxide active layer 500. The material of the oxide active layer 500 includes indium gallium tin oxide, zinc oxide, or tin oxide, etc., and is not limited herein.

[0051] In another embodiment, when the active layer 500 is an oxide active layer, the gate insulating layer 400 is also an oxide gate insulating layer 400, such as a silicon oxide gate insulating layer 400 or an aluminum oxide gate insulating layer 400. This avoids the influence of hydrogen in silicon nitride on the active layer 500, thereby improving the stability of the active layer 500.

[0052] Please see Figure 3 As an example, the gate 200 is made of Cu, the insulating barrier layer 300 is made of AlN, the gate insulating layer 400 is made of SiNx, and the active layer 500 is made of a-Si. In this application, the insulating barrier layer 300 is formed of AlN, and the gate 200 is formed of Cu. The bandgap of AlN is greater than the work function of Cu, which blocks electrons from the gate 200 from transitioning to the active layer 500, thereby preventing a positive shift in the threshold voltage and a decrease in the on-state current, thus improving the performance of the display panel 10. When this is implemented in a backlight product, it can meet the requirements of high backlight and long-term continuous operation.

[0053] Please continue reading. Figure 1 An ohmic contact layer 600 is disposed on the active layer 500. The ohmic contact layer 600 includes spaced-apart ohmic contact portions. These ohmic contact portions are located on the conductive portions of the active layer 500. The material of the ohmic contact layer 600 is N+ type a-Si. The source / drain electrode 700 includes a source electrode 710 and a drain electrode 720 spaced-apart from each other. The source electrode 710 is disposed on one ohmic contact portion, and the drain electrode 720 is disposed on the other ohmic contact portion.

[0054] A transistor is composed of a gate 200, an insulating barrier layer 300, a gate insulating layer 400, an active layer 500, an ohmic contact layer 600, and source / drain electrodes 700. This transistor is a bottom-gate transistor. The transistor is disposed in the array substrate 20.

[0055] In this application, an ohmic contact layer 600 is provided between the source / drain electrode 700 and the active layer 500, which is beneficial for the input or output of electrons, thereby improving the performance of the display panel 10.

[0056] Please see Continue Figure 2 In one embodiment, the display panel 10 further includes a color filter substrate 30 and a liquid crystal 40. The liquid crystal 40 is disposed between the color filter substrate 30 and the array substrate 20.

[0057] It should be noted that the gate insulating layer 400, ohmic contact layer 600, and source / drain electrode 700 in the display panel 10 can be removed according to the needs of the product. For example, the ohmic contact layer 600, the gate insulating layer 400, or the source / drain electrode 700 may not be provided in the display panel 10.

[0058] It should be noted that the display panel 10 provided in this application can also be a direct-view display panel.

[0059] Please see Figure 4 This application also provides a display device 21. The display device 21 includes a backlight module 50 and a display panel 10 as described above. The backlight module 50 is connected to the display panel 10. The backlight module 50 is located on the side of the array substrate 20 away from the color filter substrate 30.

[0060] This application provides a display panel 10 and a display device 21. An insulating barrier layer 300 is disposed between a gate insulating layer 400 and a gate 200. The bandgap Eg of the material of the insulating barrier layer 300 is set to be greater than the work function of the material of the gate 200. This prevents the bandgap Eg of the gate insulating layer 400 from decreasing due to the breakage of Si-H bonds in silicon nitride during long-term continuous operation. Consequently, when the work function of the gate 200 is greater than the bandgap Eg of the gate insulating layer 400, electrons in the gate 200 will not jump to the active layer 500, thereby preventing a positive shift in the threshold voltage and a decrease in the on-state current, thus improving the performance of the display panel 10.

[0061] The above provides a detailed description of a display panel and display device provided in the embodiments of this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A display panel, characterized by, include: Substrate; A gate is disposed on the substrate; An insulating barrier layer is disposed on the gate, wherein the bandgap of the material of the insulating barrier layer is greater than the work function of the material of the gate; A gate insulating layer is disposed on the insulating barrier layer; as well as An active layer is disposed on the gate insulating layer, and the active layer is made of oxide semiconductor.

2. The display panel of claim 1, wherein, The gate material includes one or more combinations of Cu, Al, Ag, Mo, Ti, Sn and Zn, and the insulating barrier layer material has a band gap greater than 5.1 eV.

3. The display panel according to claim 2, characterized in that, The insulating barrier layer is made of one or more of diamond, aluminum nitride, and boron nitride.

4. The display panel according to claim 1, characterized in that, The insulating barrier layer is made of atomic diffusion blocking materials and electron blocking materials. The electron blocking materials include one or more combinations of diamond, aluminum nitride, and boron nitride, and the atomic diffusion blocking materials include at least one of silicon oxide and aluminum oxide.

5. The display panel according to claim 4, characterized in that, The insulating barrier layer is composed of a mixture of the atomic diffusion blocking material and the electron blocking material, wherein the atomic diffusion blocking material accounts for 10% to 95% of the mass of the insulating barrier layer.

6. The display panel according to claim 4, characterized in that, The insulating barrier layer includes an electron blocking layer and an atomic diffusion blocking layer, which are sequentially stacked on the gate, or the atomic diffusion blocking layer and the electron blocking layer are sequentially stacked on the gate. The electron blocking layer is made of the electron blocking material, and the atomic diffusion blocking layer is made of the atomic diffusion blocking material.

7. The display panel according to claim 1, characterized in that, The active layer is made of amorphous silicon, and the display panel further includes a gate insulating layer, which is disposed between the gate and the insulating barrier layer, or between the insulating barrier layer and the active layer.

8. The display panel according to claim 7, characterized in that, The display panel further includes an ohmic contact layer and source / drain electrodes. The ohmic contact layer is disposed on the substrate. The active layer includes a semiconductor portion and conductive portions disposed on both sides of the semiconductor portion. The orthographic projection of the semiconductor portion on the substrate overlaps with the orthographic projection of the gate electrode on the substrate. The ohmic contact layer is located on the conductive portions, and the source / drain electrodes are disposed on the ohmic contact layer.

9. A display device, characterized in that, The display device includes a backlight module and a display panel as described in any one of claims 1-8, wherein the backlight module is connected to the display panel.

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