Auxiliary mechanism and testing method for high voltage testing device of semiconductor device

Abstract

The present application relates to an auxiliary mechanism and a testing method for a high-voltage test device for semiconductor devices. An auxiliary mechanism for a high-voltage test device for semiconductor devices, the high-voltage test device for semiconductor devices includes a test bench for placing semiconductor devices and a probe assembly for performing high-voltage testing on semiconductor devices; the auxiliary mechanism includes an enclosing frame and a connecting component. One end of the connecting component is arranged at the open end of the enclosing frame, and the other end is sealedly connected to the test bench and one of the semiconductor devices placed on the test bench to define a sealed space. The probe of the probe assembly is located in the sealed space, and the sealed space is filled with a gas with a preset pressure value. In the process of performing high-voltage testing on semiconductor devices using the probe assembly in the sealed space, the discharge voltage of the semiconductor device will be lower than the voltage required for the semiconductor device in the high-voltage test, and the semiconductor device will not be prone to discharge sparking.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor device testing, and in particular to an auxiliary mechanism and a testing method for a high-voltage testing device of a semiconductor device. Background Art

[0002] The working characteristics of semiconductor devices are high voltage (1 to 3 kilovolts or even higher) and large current (tens or hundreds of amperes). Semiconductor devices usually need to be tested at high voltage. However, semiconductor devices are very prone to discharge and sparking during high-voltage testing, which can damage the semiconductor device chip. Summary of the Invention

[0003] Based on this, it is necessary to provide an auxiliary mechanism and testing method for a semiconductor device high-voltage testing device to address the problem that semiconductor devices are very likely to experience discharge and sparking during high-voltage testing, which may damage the chips of the semiconductor devices.

[0004] According to one aspect of the present application, an auxiliary mechanism for a semiconductor device high voltage test apparatus is provided, wherein the semiconductor device high voltage test apparatus comprises a test bench for placing a semiconductor device and a probe assembly for performing a high voltage test on the semiconductor device;

[0005] The auxiliary mechanism includes:

[0006] a bounding box having an open end facing the test bench; and

[0007] a connecting member, one end of which is disposed at the open end of the enclosing frame, and the other end of which is sealedly connected to the test bench and one of the semiconductor devices placed on the test bench to define a sealed space;

[0008] Wherein, the probe of the probe assembly is located in the sealed space, and the sealed space is filled with gas with a preset pressure value.

[0009] In one embodiment, the probe assembly includes a probe arm disposed on the enclosing frame, and the probe is disposed on a portion of the probe arm located within the sealed space;

[0010] The probe arm is configured to operably drive the probe to move toward a test point of the semiconductor device.

[0011] In one embodiment, the enclosing frame is arranged opposite to the semiconductor device on the test bench along a first direction;

[0012] The connecting component includes a first buffer component connected to both sides of the open end of the enclosing frame and extending along the first direction, so that the probe arm can operably drive the probe to move toward the test point of the semiconductor device;

[0013] The first direction is perpendicular to the surface of the semiconductor device.

[0014] In one embodiment, the first buffer component includes an annular main portion connected to the open end of the surrounding frame, and bent portions respectively provided on both radial sides of the annular main portion;

[0015] The bending portion is configured to bend and extend from one axial end to the other axial end of the annular main body portion;

[0016] A central axis of the annular main body is parallel to the first direction.

[0017] In one embodiment, the probe assembly further includes a high voltage test circuit board connected to the probe arm and the probe respectively;

[0018] One of the probe arm and the high voltage test circuit board is sealed and connected to the surrounding frame.

[0019] In one embodiment, a second buffer component is further included;

[0020] The probe arm is sealed and connected to the surrounding frame through the second buffer component, and the second buffer component extends along the first direction.

[0021] In one embodiment, the second buffer component includes two buffer portions located on both radial sides of the probe arm;

[0022] Each of the buffer portions includes a first buffer segment connected to the enclosing frame and extending along a first direction, and a second buffer segment connected between the first buffer segment and the probe arm;

[0023] The second buffer section extends along a second direction;

[0024] The first direction and the second direction are perpendicular to each other.

[0025] In one embodiment, the enclosing frame is provided with a closable high-pressure gas injection port that is in communication with the sealed space, so as to provide gas with a preset pressure value to the sealed space through the high-pressure gas injection port.

[0026] In one embodiment, the surrounding frame includes an insulating frame body to insulate the probe assembly and the surrounding frame from each other.

[0027] According to another aspect of the present application, a testing method is provided, wherein the testing method utilizes the above-mentioned auxiliary mechanism to perform testing, and the testing method comprises:

[0028] In the sealed space, a high voltage test is performed on the semiconductor device using the probes of the probe assembly.

[0029] The above-mentioned auxiliary mechanism and testing method for the high-voltage testing device of semiconductor devices, when the auxiliary mechanism is used, can make the air pressure in the sealed space reach a preset pressure value, and then use the probe assembly in the sealed space to perform high-voltage testing on the semiconductor device. According to Paschen's law, as the air pressure in the sealed space increases, the discharge voltage of the semiconductor device will also increase. The preset pressure value can be set according to the voltage required for the semiconductor device in the high-voltage test, so that the discharge voltage of the semiconductor device is lower than the voltage required for the semiconductor device in the high-voltage test. Then, in the process of performing high-voltage testing on the semiconductor device using the probe assembly in the sealed space, the discharge voltage of the semiconductor device will be lower than the voltage required for the semiconductor device in the high-voltage test, and the semiconductor device will be less prone to discharge sparking, thereby preventing the semiconductor device from being damaged by discharge sparking. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 A schematic structural diagram of a semiconductor device high voltage test device and an auxiliary mechanism for the semiconductor device high voltage test device in an embodiment of the present application is shown;

[0031] Figure 2 A schematic structural diagram of a semiconductor device high voltage test device and an auxiliary mechanism for the semiconductor device high voltage test device in another embodiment of the present application is shown;

[0032] Figure 3 A schematic structural diagram of the first buffer component in an embodiment of the present application is shown.

[0033] In the figure: 100, semiconductor device; 210, test bench; 220, probe assembly; 221, probe arm; 222, probe; 223, high-voltage test circuit board; 300, auxiliary mechanism; 310, enclosing frame; 311, opening end; 312, high-pressure gas injection port; 313, gas injection valve; 320, connecting component; 321, annular main body; 3211, central cavity; 322, bending portion; 3220, bending unit; 3221, branch segment; 3222, branch cavity; 330, sealed space; 340, second buffer component; 341, first buffer segment; 342, second buffer segment. DETAILED DESCRIPTION

[0034] To make the above-mentioned objects, features, and advantages of the present application more clearly understood, the specific embodiments of the present application are described in detail below with reference to the accompanying drawings. The following description sets forth many specific details to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways than those described herein, and those skilled in the art can make similar improvements without violating the scope of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.

[0035] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0036] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of such features. Throughout the description of this application, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0037] In this application, unless otherwise specified or limited, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two elements or interaction between two elements, unless otherwise specified. Those skilled in the art will understand the specific meanings of the above terms in this application based on specific circumstances.

[0038] In this application, unless otherwise expressly specified or limited, when a first feature is "above" or "below" a second feature, it may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Furthermore, when a first feature is "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0039] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be an intermediate element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be an intermediate element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only implementation methods.

[0040] A semiconductor device 100 is usually subjected to a high-voltage test using a semiconductor device high-voltage test apparatus. The semiconductor device high-voltage test apparatus includes a test bench 210 for placing the semiconductor device 100 and a probe assembly 220 for performing a high-voltage test on the semiconductor device 100. The probe assembly 220 can be used to perform a high-voltage test on the semiconductor device 100 placed on the test bench 210.

[0041] Figure 1 A schematic structural diagram of an auxiliary mechanism 300 for a high-voltage test apparatus for a semiconductor device in an embodiment of the present application is shown.

[0042] In some embodiments of the present application, optionally, see Figure 1 An auxiliary mechanism 300 for a high-voltage test apparatus for a semiconductor device provided by an embodiment of the present application includes a surrounding frame 310 and a connecting component 320 .

[0043] The enclosing frame 310 has an open end 311 facing the test table 210. One end of the connecting component 320 is set at the open end 311 of the enclosing frame 310. The other end of the connecting component 320 is sealedly connected to the test table 210 and one of the semiconductor devices 100 placed on the test table 210 to define a sealed space 330.

[0044] The probe 222 of the probe assembly 220 is located in the sealed space 330, and the sealed space 330 is filled with gas at a preset pressure value. When the auxiliary mechanism 300 is used, the air pressure in the sealed space 330 can reach the preset pressure value. Then, the semiconductor device 100 can be subjected to a high-voltage test using the probe assembly 220 in the sealed space 330. According to Paschen's law, as the air pressure in the sealed space 330 increases, the discharge voltage of the semiconductor device 100 also increases. The preset pressure value can be set according to the voltage required for the semiconductor device 100 during the high-voltage test, so that the discharge voltage of the semiconductor device 100 is lower than the voltage required for the high-voltage test. Then, during the high-voltage test of the semiconductor device 100 using the probe assembly 220 in the sealed space 330, the discharge voltage of the semiconductor device 100 will be lower than the voltage required for the high-voltage test, making it less likely for the semiconductor device 100 to experience discharge sparks, thereby preventing the semiconductor device 100 from being damaged by discharge sparks.

[0045] For example, if the voltage required for the high-voltage test of the semiconductor device 100 is 1700V, a preset pressure value can be set so that the discharge voltage of the semiconductor device 100 is 2000V. In this way, during the high-voltage test of the semiconductor device 100 using the probe assembly 220 in the sealed space 330, the semiconductor device 100 is unlikely to experience discharge sparks.

[0046] In some embodiments, see Figure 1 , a sealed space 330 is formed between the surrounding frame 310 and the semiconductor device 100 placed on the test stage 210 .

[0047] In other embodiments, see Figure 2 A sealed space 330 is formed between the enclosing frame 310 and the test table 210. Compared with the sealed space 330 formed between the enclosing frame 310 and the semiconductor device 100 placed on the test table 210, the semiconductor device 100 in this embodiment is accommodated in the sealed space 330, the semiconductor device 100 is isolated from the external environment, and there is sufficient spacing between the semiconductor device 100 and the probe 222 before testing, further reducing the risk of scratches on the semiconductor device 100.

[0048] Optionally, liquid such as fluorinated oil may be injected into the sealed space 330 to further increase the discharge voltage of the semiconductor device 100 and better avoid discharge sparking.

[0049] In some embodiments, see Figure 1The probe assembly 220 is disposed on a probe arm 221 of the enclosing frame 310, and a probe 222 is connected to the probe arm 221. The probe 222 is disposed on the portion of the probe arm 221 located within the sealed space 330. The probe arm 221 is configured to operably drive the probe 222 toward a test point of the semiconductor device 100. The probe arm 221 can drive the probe 222 toward the test point of the semiconductor device 100, so that the probe 222 contacts the test point of the semiconductor device 100. In this way, the semiconductor device 100 can be well tested by using the probe assembly 220 within the sealed space 330.

[0050] In some embodiments of the present application, optionally, see Figure 1 The enclosing frame 310 is disposed opposite to the semiconductor device 100 on the test table 210 along a first direction F1. The connecting component 320 includes a first buffer component extending along the first direction F1, so that the probe arm 221 can operably drive the probe 222 to move toward the test point of the semiconductor device 100. The first direction F1 is perpendicular to the surface of the semiconductor device 100.

[0051] It can be understood that a connecting component 320 is connected between the test bench 210 and one of the semiconductor devices 100 placed on the test bench 210 and the open end 311 of the enclosing frame 310, and a first buffer component extending along the first direction F1 is also located between the test bench 210 and one of the semiconductor devices 100 placed on the test bench 210 and the open end 311 of the enclosing frame 310. Then, the probe arm 221 can be manually operated to move along the first direction F1, and the probe 222 can be driven to move along the first direction F1 and toward the test point of the semiconductor device 100, so that the probe 222 contacts the test point of the semiconductor device 100 and can perform high-voltage testing on the semiconductor device 100. The provision of the first buffer component can improve the convenience of operation.

[0052] Each time a high-voltage test is performed, the first buffer component needs to be sealed between the test bench 210 and one of the semiconductor devices 100 placed on the test bench 210 and the open end 311 of the enclosing frame 310 to maintain the sealed environment of the sealed space 330, while also better preventing the probe 222 from scratching the surface of the semiconductor device 100 and causing other damage.

[0053] In addition, the provision of the first buffer component can also improve the versatility of the auxiliary mechanism 300. Normally, different probes 222 need to be configured for different semiconductor devices 100, and each measurement also requires customization of the corresponding probe 222 according to the test point of the semiconductor device 100. In this application, after adding the first buffer component, probes 222 of different sizes can be applied to the auxiliary mechanism 300 of this application, which is beneficial to reduce the consumption cost of the probe 222 to a certain extent and improves the versatility of the auxiliary mechanism 300.

[0054] In some embodiments of the present application, optionally, see Figure 1 and Figure 2 , and refer to Figure 3 The first buffer component includes an annular main body portion 321 connected to the open end 311 of the enclosing frame 310, and bending portions respectively arranged on both radial sides of the annular main body portion 321, and the bending portions are constructed to bend and extend from one axial end to the other end of the annular main body portion 321, and the central axis of the annular main body portion 321 is parallel to the first direction F1.

[0055] It can be understood that the first buffer component can be well extended and retracted along the first direction F1, which makes it convenient to drive the probe 222 to move along the first direction through the probe arm 221, so that the probe 222 can contact the test point of the semiconductor device 100. At the same time, using the first buffer component, the position of the probe 222 along the first direction F1 can be adjusted according to the test point of the semiconductor device 100, and the position of the probe 222 along the direction parallel to the surface of the semiconductor device 100 can also be adjusted according to the test point of the semiconductor device 100. In this way, the first buffer component can enable probes 222 of different sizes to be better applied to the auxiliary mechanism 300 of the present application, which is beneficial to reduce the consumption cost of the probe 222 to a certain extent and improve the versatility of the auxiliary mechanism 300.

[0056] Optionally, the bending portion includes a plurality of bending units 3220 arranged along the axial direction of the annular main portion 321. The annular main portion 321 is formed with a central cavity 3211. Each bending unit 3220 includes two branch segments 3221 arranged along the axial direction of the annular main portion 321. There is a gap along the axial direction of the annular main portion 321 between the ends of the two branch segments 3221 that are closer to the central axis of the annular main portion 321. The ends of the two branch segments 3221 that are farther from the central axis of the annular main portion 321 are connected to each other, forming a branch cavity 3222 between the two branch segments 3221 that is connected to the central cavity 3211.

[0057] In this way, the first buffer component can better expand and contract along the first direction F1, so that probes 222 of different sizes can be better applied to the auxiliary mechanism 300 of the present application, which is helpful to reduce the consumption cost of the probe 222 to a certain extent and improve the versatility of the auxiliary mechanism 300.

[0058] In some embodiments of the present application, optionally, see Figure 1 and Figure 2 The probe assembly 220 further includes a high voltage test circuit board 223 connected to the probe arm 221 and the probe 222 , respectively. One of the probe arm 221 and the high voltage test circuit board 223 is sealed and connected to the surrounding frame 310 .

[0059] In some embodiments, see Figure 1 The high-voltage test circuit board 223 is sealed and connected to the surrounding frame 310. The probe arm 221 can be manually operated to move along the first direction F1, which can drive the entire connection between the probe assembly 220 and the surrounding frame 310 to move along the first direction F1 and toward the test point of the semiconductor device 100, so that the probe 222 contacts the test point of the semiconductor device 100, thereby enabling a high-voltage test to be performed on the semiconductor device 100.

[0060] In other embodiments, see Figure 2 The probe arm 221 is sealed and connected to the surrounding frame 310. The probe arm 221 can be manually operated to move along the first direction F1, which can drive the entire connection between the probe assembly 220 and the surrounding frame 310 to move along the first direction F1 and toward the test point of the semiconductor device 100, so that the probe 222 contacts the test point of the semiconductor device 100, thereby enabling a high voltage test to be performed on the semiconductor device 100.

[0061] In some embodiments of the present application, optionally, see Figure 2 The auxiliary mechanism 300 further includes a second buffer member 340, through which the probe arm 221 is sealedly connected to the surrounding frame 310. The second buffer member 340 extends along the first direction F1. This allows the position of the probe 222 along the first direction F1 to be adjusted according to the test points of the semiconductor device 100. This improves the versatility of the auxiliary mechanism 300 and reduces the impact of the probe 222 on the semiconductor device 100.

[0062] In some embodiments of the present application, optionally, see Figure 2 The second buffer component 340 includes two buffer portions located on both radial sides of the probe arm 221, each buffer portion includes a first buffer segment 341 connected to the enclosing frame 310 and extending along the first direction F1, and a second buffer segment 342 connected between the first buffer segment 341 and the probe arm 221, and the second buffer segment 342 extends along the second direction F2, wherein the first direction F1 and the second direction F2 are perpendicular to each other.

[0063] In this way, it is convenient to adjust the position of the probe 222 along the first direction F1 according to the test point of the semiconductor device 100, and it is also convenient to adjust the position of the probe 222 along the second direction F2 according to the test point of the semiconductor device 100, so as to better utilize the probe assembly 220 to perform high-voltage testing on the semiconductor device 100, which can further improve the versatility of the auxiliary mechanism 300.

[0064] In some embodiments of the present application, optionally, see Figure 1 and Figure 2 The surrounding frame 310 is provided with a closable high-pressure gas injection port 312 that is in communication with the sealed space 330 to supply high-pressure gas to the sealed space 330. Gas having a preset pressure value can be supplied to the sealed space 330 through the high-pressure gas injection port 312, so that the gas pressure in the sealed space 330 reaches the preset pressure value, so that the semiconductor device 100 can be subjected to a high-voltage test in the sealed space 330 using the probe 222 of the probe assembly 220.

[0065] It should be noted that each time a semiconductor device 100 is subjected to a high-voltage test, it only needs to be filled with gas once. The setting of the sealed space 330 can avoid repeated filling, which can save filling costs and filling time to a certain extent and improve test capacity.

[0066] The setting of the sealed space 330 makes it unnecessary to inflate during the high-pressure test, and the airflow is stable, thereby avoiding airflow fluctuations during inflation that cause the probe 222 to be unstable and affect the stability of the test.

[0067] Optionally, a gas injection valve 313 is provided on the high-pressure gas injection port 312, so that the high-pressure gas injection port 312 can be operably closed by the gas injection valve 313. This facilitates operation and facilitates adjustment of the flow of gas passing through the high-pressure gas injection port 312, so as to better provide the sealed space 330 with gas having a preset pressure value.

[0068] In some embodiments of the present application, the surrounding frame 310 optionally includes an insulating frame to insulate the probe assembly 220 from the surrounding frame 310 , thereby improving the safety of the auxiliary mechanism 300 .

[0069] The material of the insulating frame can be plastic, glass, or other materials that can provide insulation and protection, without any specific limitation.

[0070] An embodiment of the present application provides a testing method that utilizes the auxiliary mechanism 300 to perform testing. The testing method includes: performing a high voltage test on the semiconductor device 100 within the sealed space 330 using the probe 222 of the probe assembly 220 .

[0071] In some embodiments, the testing method comprises:

[0072] The test platform 210 and one of the semiconductor devices 100 placed on the test platform 210 are sealedly connected to a side of the connection component 320 away from the opening end 311, so that a sealed space 330 is defined between the test platform 210, one of the semiconductor devices 100 placed on the test platform 210, and the surrounding frame 310;

[0073] Provide gas with a preset pressure value to the sealed space 330 through the high-pressure gas injection port 312;

[0074] Applying a force toward the semiconductor device 100 to the probe pins 222 of the probe assembly 220 so that the probe pins 222 of the probe assembly 220 contact the test points of the semiconductor device 100 ;

[0075] The semiconductor device 100 is subjected to a high voltage test using the probe assembly 220 .

[0076] It can be understood that during the high-voltage test of the semiconductor device 100 using the probe assembly 220 in the sealed space 330, the discharge voltage of the semiconductor device 100 is lower than the voltage required for the high-voltage test of the semiconductor device 100, so the semiconductor device 100 is less likely to experience discharge sparks, thereby preventing the semiconductor device 100 from being damaged by discharge sparks.

[0077] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0078] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that a person skilled in the art could make various modifications and improvements without departing from the spirit of the present application, all of which fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.

Claims

1. An auxiliary mechanism for a high-voltage test device for a semiconductor device, characterized in that: The semiconductor device high-voltage test device comprises a test bench (210) for placing a semiconductor device (100) and a probe assembly (220) for performing a high-voltage test on the semiconductor device (100); The auxiliary mechanism (300) comprises: a surrounding frame (310) having an open end (311) facing the test station (210); and a connecting component (320), one end of which is disposed at the open end (311) of the enclosing frame (310), and the other end of which is sealedly connected to the test bench (210) and one of the semiconductor devices (100) placed on the test bench (210) to define a sealed space (330); The probe (222) of the probe assembly (220) is located in the sealed space (330), and the sealed space (330) is filled with a gas having a preset pressure value; The enclosing frame (310) and the semiconductor device (100) on the test bench (210) are arranged opposite to each other along a first direction; the connecting component (320) includes a first buffer component connected to both sides of an open end (311) of the enclosing frame (310) and extending along the first direction, so that the probe assembly (220) can be operably moved toward a test point of the semiconductor device (100); Wherein, the first direction is perpendicular to the surface of the semiconductor device (100).

2. The auxiliary mechanism for a semiconductor device high voltage test device according to claim 1, characterized in that: The probe assembly (220) includes a probe arm (221) disposed on the surrounding frame (310), and the probe (222) is disposed on a portion of the probe arm (221) located within the sealed space (330); The probe arm (221) is configured to operably drive the probe (222) to move toward a test point of the semiconductor device (100).

3. The auxiliary mechanism for a semiconductor device high voltage test device according to claim 2, characterized in that: The first buffer component comprises an annular main body portion (321) connected to the open end (311) of the surrounding frame (310), and bending portions (322) respectively arranged on both radial sides of the annular main body portion (321); The bending portion (322) is configured to bend and extend from one axial end to the other end of the annular main body portion (321); The central axis of the annular main body (321) is parallel to the first direction.

4. The auxiliary mechanism for a semiconductor device high voltage test device according to claim 2, characterized in that: The probe assembly (220) further includes a high-voltage test circuit board (223) connected to the probe arm (221) and the probe (222) respectively; One of the probe arm (221) and the high-voltage test circuit board (223) is sealed and connected to the surrounding frame (310).

5. The auxiliary mechanism for a semiconductor device high voltage test device according to claim 4, characterized in that: Also comprising a second buffer component (340); The probe arm (221) is sealed and connected to the surrounding frame (310) via the second buffer component (340), and the second buffer component (340) extends along the first direction.

6. The auxiliary mechanism for a semiconductor device high voltage test device according to claim 5, characterized in that: The second buffer component (340) includes two buffer portions located on both radial sides of the probe arm (221); Each of the buffer portions comprises a first buffer segment (341) connected to the enclosing frame (310) and extending along a first direction, and a second buffer segment (342) connected between the first buffer segment (341) and the probe arm (221); The second buffer section (342) extends along a second direction; The first direction and the second direction are perpendicular to each other.

7. The auxiliary mechanism for a semiconductor device high voltage test device according to claim 1, characterized in that: The surrounding frame (310) is provided with a closable high-pressure gas injection port (312) that is in communication with the sealed space (330), so as to provide gas with a preset pressure value to the sealed space (330) through the high-pressure gas injection port (312).

8. The auxiliary mechanism for a semiconductor device high voltage test device according to claim 1, characterized in that: The surrounding frame (310) includes an insulating frame body so as to insulate the probe assembly (220) and the surrounding frame (310) from each other.

9. A testing method, characterized in that: The testing method is performed using the auxiliary mechanism according to any one of claims 1 to 8, and the testing method comprises: In the sealed space (330), a high voltage test is performed on the semiconductor device (100) using the probe (222) of the probe assembly (220).

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