Integrated LED chip and manufacturing method thereof

Abstract

The application provides an integrated LED chip and a manufacturing method thereof. Each LED light emitting unit in the integrated LED chip has a common electrode, and another electrode pad is distributed around the integrated LED chip and connected with each LED light emitting unit through a second metal layer (i.e. an electrode lead), and the electrode lead of the LED light emitting unit is led out to the edge of the conductive substrate in a way that it is isolated from the adjacent LED light emitting unit through the first insulating layer, and is independently arranged, thereby realizing flexible control of each LED light emitting unit. Therefore, based on the above arrangement, the second metal layer can be electrically connected with the second semiconductor layer of each light emitting unit, and can also serve as a lead wire to realize electrical connection with the electrode pad around the integrated LED, and the layout of the electrode lead wire and the electrode pad is completed at the wafer end, thereby realizing integrated packaging, and effectively saving product manufacturing process and labor cost.

Description

Technical Field

[0001] This invention relates to the field of light-emitting diodes, and more particularly to integrated LED chips and their manufacturing methods. Background Technology

[0002] The LED chip, as the core component of an LED lamp, functions to convert electrical energy into light energy. Specifically, it includes an epitaxial wafer and N-type and P-type electrodes respectively disposed on the epitaxial wafer. The epitaxial wafer includes a P-type semiconductor layer, an N-type semiconductor layer, and an active layer located between the N-type and P-type semiconductor layers. When current flows through the LED chip, holes in the P-type semiconductor and electrons in the N-type semiconductor move towards the active layer and recombine there, causing the LED chip to emit light.

[0003] With the rapid development of LED technology, LED applications are becoming increasingly widespread, leading to higher demands on LED light sources, especially increasing luminous intensity per unit area, which is a crucial design consideration. For light-emitting units requiring image display, achieving both high-density light emission and individual control of the unit array places higher demands on chip and packaging technologies. Examples include MICRO LEDs and matrix LED automotive headlights.

[0004] However, in the existing technology, the light-emitting unit is usually a separate package. During the integration process, due to the limitations of package size and process, the package integration is poor. At the same time, the contact pads of conventional LED chips are often located on top of the chip, which can easily block light and affect the light-emitting morphology.

[0005] In view of this, the inventor has specifically designed an integrated LED chip and its manufacturing method, which leads to this invention. Summary of the Invention

[0006] The purpose of this invention is to provide an integrated LED chip and its manufacturing method to solve the technical problems faced by existing LED chips, such as poor packaging integration, light blocking by contact pads, and impact on light emission morphology.

[0007] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0008] An integrated LED chip, characterized in that it comprises: a conductive substrate, a plurality of LED light-emitting units formed on the surface of the conductive substrate, electrode pads, and electrode leads;

[0009] Each of the LED light-emitting units includes an epitaxial stack, a first insulating layer, a second metal layer, and a first metal layer; the epitaxial stack is disposed above the conductive substrate, and the epitaxial stack includes at least a second type semiconductor layer, an active region, and a first type semiconductor layer stacked sequentially along a first direction, and the epitaxial stack has a through-hole exposing a portion of the surface of the first type semiconductor layer; the first direction is perpendicular to the conductive substrate and extends from the conductive substrate to the epitaxial stack;

[0010] The second metal layer includes a metal material layer that is ohmically contactable and enables light reflection. It is stacked on the side surface of the second type semiconductor layer away from the active region and extends to the edge of the conductive substrate to form the electrode lead. The electrode pad is formed on the edge of the conductive substrate and is connected to the electrode lead.

[0011] The first insulating layer covers the epitaxial stack and exposes the bottom surface of each via and a portion of the surface of the adjacent second type semiconductor layer;

[0012] The second insulating layer is disposed on the side of the epitaxial stack facing the conductive substrate, and covers the second metal layer and the epitaxial stack and extends to the sidewall of the via.

[0013] The first metal layer is stacked on the side surface of the conductive substrate facing the epitaxial stack; and the through-hole is embedded to form an electrical contact with the first type of semiconductor layer, so that each of the LED light-emitting units forms a common electrode.

[0014] Preferably, each of the LED light-emitting units is integrally formed, and the electrode leads of the LED light-emitting unit are isolated by the first insulating layer and disposed below the adjacent LED light-emitting unit and led out to the edge of the conductive substrate.

[0015] Preferably, each of the LED light-emitting units is formed on the surface of the conductive substrate through trenches that isolate them from each other;

[0016] The electrode leads of the LED light-emitting unit are isolated by the first insulating layer and disposed below the adjacent LED light-emitting unit and led out to the edge of the conductive substrate; or, the electrode leads extend to the edge of the conductive substrate through the trench.

[0017] Preferably, the first metal layer completely fills the through-hole.

[0018] Preferably, the through hole is provided with a filling structure.

[0019] Preferably, the filling structure includes independent epitaxial pillars formed by etching in the epitaxial stack, the independent epitaxial pillars being isolated from the epitaxial stack by grooves, and the first metal layer being embedded in the grooves to form an electrical contact with the first type of semiconductor layer.

[0020] Preferably, the filling structure includes a filling layer directly stacked at the bottom of the via; the filling layer is isolated from the epitaxial stack by a groove, and the first metal layer is embedded in the groove to form an electrical contact with the first type of semiconductor layer.

[0021] Preferably, the filling layer comprises at least one or more stacks of insulating materials and metallic materials.

[0022] Preferably, the substrate has a first long side and a second long side, and a first short side and a second short side.

[0023] Preferably, at least some of the electrode leads of the LED light-emitting units extend to the long side of the conductive substrate.

[0024] This invention also provides a method for manufacturing an integrated LED chip, comprising the following steps:

[0025] S01, Provide a growth substrate;

[0026] S02. An epitaxial stack is stacked on the surface of the growth substrate, the epitaxial stack comprising a first type semiconductor layer, an active region and a second type semiconductor layer stacked sequentially along the growth direction;

[0027] S03. A plurality of through holes are formed in the epitaxial stack by an etching process, wherein the through holes expose a portion of the surface of the first type semiconductor layer;

[0028] S04. Deposit a first insulating layer, the first insulating layer covering the epitaxial stack and exposing the bottom surface of each of the vias and a portion of the surface of the adjacent second type semiconductor layer;

[0029] S05. Form a second metal layer, the second metal layer comprising a metal material layer that can be ohmically contacted and realize light reflection, which is stacked on the exposed surface of the second type semiconductor layer and extends to the edge of the growth substrate through both sides of the epitaxial stack to form electrode leads;

[0030] S06. Deposit a second insulating layer that covers the second metal layer and the epitaxial stack and extends to the sidewall of the via.

[0031] S07. Fabricate a first metal layer, which is stacked on the surface of the second insulating layer and embedded in the through-hole to form contact with the first type of semiconductor layer; and fix the first metal layer to the conductive substrate by a metal bonding process.

[0032] S08. Peel off the growth substrate;

[0033] S09. Etch the edges of the epitaxial stack to expose the first insulating layer;

[0034] Alternatively, the epitaxial stack can be etched to form a plurality of LED light-emitting units isolated from each other by trenches, and the trenches expose the first insulating layer;

[0035] S10. Etch the first insulating layer located at one edge of the conductive substrate to expose the electrode leads corresponding to each LED light-emitting unit.

[0036] S11. An electrode pad is deposited on the exposed portion of the electrode lead to form an electrode pad.

[0037] Preferably, each of the LED light-emitting units is integrally formed, and the electrode leads of the LED light-emitting unit are isolated by the first insulating layer and disposed below the adjacent LED light-emitting unit and led out to the edge of the conductive substrate.

[0038] Preferably, each of the LED light-emitting units is formed on the surface of the conductive substrate through trenches that isolate them from each other;

[0039] The electrode leads of the LED light-emitting unit are isolated by the first insulating layer and disposed below the adjacent LED light-emitting unit and led out to the edge of the conductive substrate; or, the electrode leads extend to the edge of the conductive substrate through the trench.

[0040] Preferably, the through hole is provided with a filling structure.

[0041] Preferably, step S07 further includes:

[0042] First, a filling structure is formed within the via, the filling structure including a filling layer directly stacked at the bottom of the via; the filling layer is isolated from the epitaxial stack by a groove, and the first metal layer is embedded in the groove to form an electrical contact with the first type semiconductor layer;

[0043] Then, a first metal layer is fabricated, which is stacked on the surface of the second insulating layer and embedded in the groove to form contact with the first type of semiconductor layer; and the first metal layer is fixed to the conductive substrate by a metal bonding process.

[0044] Preferably, the filling structure includes independent epitaxial pillars formed by etching in the epitaxial stack, the independent epitaxial pillars being isolated from the epitaxial stack by grooves, and the first metal layer being embedded in the grooves to form an electrical contact with the first type of semiconductor layer.

[0045] As can be seen from the above technical solution, the integrated LED chip provided by the present invention includes an epitaxial stack, a second metal layer, a second insulating layer, and a first metal layer in each LED light-emitting unit; the epitaxial stack is disposed above the conductive substrate, and the epitaxial stack includes at least a second type semiconductor layer, an active region, and a first type semiconductor layer stacked sequentially along a first direction, and the epitaxial stack has a through-hole exposing a portion of the surface of the first type semiconductor layer; the first direction is perpendicular to the conductive substrate and extends from the conductive substrate to the epitaxial stack; the second metal layer is stacked on the second type semiconductor layer. A layer is formed on the side surface opposite to the active region and extends to the edge of the conductive substrate through the trench, forming the electrode lead; the electrode pad is formed on the edge of the conductive substrate and connected to the electrode lead; a second insulating layer is disposed on the side of the epitaxial stack facing the conductive substrate, and covers the second metal layer and the epitaxial stack, extending to the sidewall of the via; a first metal layer is stacked on the side surface of the conductive substrate facing the epitaxial stack; and is embedded in the via to form an electrical contact with the first type of semiconductor layer, so that each LED light-emitting unit forms a common electrode. Thus, each LED light-emitting unit has a common electrode, and another electrode pad is distributed around the integrated LED chip and connected to each LED light-emitting unit through the second metal layer (i.e., electrode lead). The electrode leads of the LED light-emitting units are led out to the edge of the conductive substrate through the first insulating layer, isolating them from adjacent LED light-emitting units, and are independently configured, thereby enabling flexible control of each LED light-emitting unit. Therefore, based on the above configuration, the second metal layer can be electrically connected to the second semiconductor layer of each light-emitting unit, and can also act as a lead to achieve electrical connection with the electrode pads around the integrated LED. The layout of electrode leads and electrode pads is completed at the chip end, realizing integrated packaging, which can effectively save product manufacturing process and labor costs.

[0046] Secondly, the electrode leads of the LED light-emitting unit are isolated by the first insulating layer and disposed below the adjacent LED light-emitting unit and led out to the edge of the conductive substrate. This can effectively reduce the spacing between each LED light-emitting unit or even eliminate the need for spacing, thereby increasing the luminous density.

[0047] The method for manufacturing an integrated LED chip provided by this invention achieves the beneficial effects of the aforementioned integrated LED chip while being simple, convenient, and easy to mass-produce. Attached Figure Description

[0048] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0049] Figure 1 This is a top view of the integrated LED chip provided in Embodiment 1 of the present invention;

[0050] Figure 2 This is a schematic diagram of the structure of two adjacent LED light-emitting units in the integrated LED chip provided in Embodiment 1 of the present invention;

[0051] Figures 3.1A to 3.11A This is a schematic diagram of the structure corresponding to the steps of the integrated LED chip manufacturing method provided in Embodiment 1 of the present invention;

[0052] Figures 3.1B to 3.11B This is a top view of the structure corresponding to the steps of the integrated LED chip manufacturing method provided in Embodiment 1 of the present invention;

[0053] Figure 4 This is a top view of the integrated LED chip provided in Embodiment 2 of the present invention;

[0054] Figure 5 This is a schematic diagram of the structure of two adjacent LED light-emitting units in the integrated LED chip provided in Embodiment 2 of the present invention;

[0055] Symbol explanations in the figure: 1. Conductive substrate, 2. Type I semiconductor layer, 3. Active region, 4. Type II semiconductor layer, 5. First insulating layer, 6. Second metal layer, 7. Second insulating layer, 8. First metal layer, 9. Through hole, 10. Growth substrate, 11. Trench, 12. Electrode pad, L1...Ln: Light-emitting unit. Detailed Implementation

[0056] To make the content of this invention clearer, the following description, in conjunction with the accompanying drawings, further illustrates the invention. This invention is not limited to this specific embodiment. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention.

[0057] Example 1

[0058] like Figure 1 As shown, an integrated LED chip includes: a conductive substrate 1, a plurality of LED light-emitting units (L1...Ln) formed on the surface of the conductive substrate 1 and isolated from each other by trenches 11, electrode pads 12, and electrode leads as shown. Figure 2 As shown, each LED light-emitting unit includes an epitaxial stack, a first insulating layer 5, a second metal layer 6, a second insulating layer 7, and a first metal layer 8; the epitaxial stack is disposed above the conductive substrate 1, and the epitaxial stack includes at least a second type semiconductor layer 4, an active region 3, and a first type semiconductor layer 2 stacked sequentially along a first direction, and the epitaxial stack has a through hole 9 exposing part of the surface of the first type semiconductor layer 2; the first direction is perpendicular to the conductive substrate 1 and points from the conductive substrate 1 to the epitaxial stack;

[0059] The second metal layer 6 includes a metal material layer that can be ohmically contacted and realize light reflection. It is stacked on the surface of the second type semiconductor layer 4 away from the active region 3 and extends to the edge of the conductive substrate 1 through the trench 11 to form an electrode lead. The electrode pad 12 is formed on the edge of the conductive substrate 1 and is connected to the electrode lead.

[0060] The first insulating layer 5 covers the epitaxial stack and exposes the bottom surface of each via 9 and a portion of the surface of the adjacent second type semiconductor layer 4;

[0061] The second insulating layer 7 has an epitaxial stack on the side facing the conductive substrate 1, and covers the second metal layer 6 and the epitaxial stack and extends to the sidewall of the through hole 9.

[0062] The first metal layer 8 is stacked on the side surface of the conductive substrate 1 facing the epitaxial stack; and through-hole 9 is embedded to form an electrical contact with the first type semiconductor layer 2, so that each LED light-emitting unit forms a common electrode.

[0063] in, Figure 1 , Figure 2 This illustration only shows the application of two adjacent LED light-emitting units (L1, L2) forming a group and then leading out electrode leads and electrode pads 12 on the same side. In other embodiments of the present invention, three or more adjacent LED light-emitting units may form a group and then lead out electrode leads and electrode pads 12 on the same side. The specific implementation may be adjusted according to product requirements, and this application does not limit this.

[0064] It is worth mentioning that the types of the first type semiconductor layer 2, the active region 3, and the second type semiconductor layer 4 in the epitaxial stack can also be unrestricted in this embodiment. For example, the first type semiconductor layer 2 can be, but is not limited to, a gallium nitride layer, and correspondingly, the second type semiconductor layer 4 can be, but is not limited to, a gallium nitride layer.

[0065] Meanwhile, this embodiment does not limit the first insulating layer 5 and the second insulating layer 7, as long as the insulation requirements are met. In a specific embodiment, the materials of the first and second insulating layers 7 can be, but are not limited to, SiO2 (silicon dioxide).

[0066] Similarly, this embodiment does not limit the specific material type of the first metal layer 8, as long as the first metal layer 8 meets the conductivity requirements.

[0067] In a specific embodiment, the first type semiconductor layer 2 is a P-type semiconductor layer, and correspondingly, the second type semiconductor layer 4 is an N-type semiconductor layer; then the second metal layer 6 only needs to meet the conductivity requirements.

[0068] In another specific embodiment, the first type semiconductor layer 2 is an N-type semiconductor layer, and correspondingly, the second type semiconductor layer 4 is a P-type semiconductor layer; then the second metal layer 6 is a metal material layer that can be ohmically contacted and realize light reflection.

[0069] In one specific embodiment, the second metal layer 6 includes one or more of indium, tin, aluminum, gold, platinum, zinc, silver, titanium, lead, nickel, rhodium, tungsten, etc.

[0070] Furthermore, the accompanying drawings in the specification only illustrate the case where a single LED light-emitting unit corresponds to a single through hole 9, but this embodiment does not limit the number of through holes 9 in the LED light-emitting unit; there can be one or more, depending on the product requirements.

[0071] In this embodiment, the first metal layer 8 completely fills the through hole 9.

[0072] In this embodiment, the through hole 9 is provided with a filling structure.

[0073] In this embodiment, the filling structure includes independent epitaxial pillars formed by etching in the epitaxial stack. The independent epitaxial pillars are isolated from the epitaxial stack by grooves, and the first metal layer 8 is embedded in the grooves to form an electrical contact with the first type semiconductor layer 2.

[0074] In this embodiment, the filling structure includes a filling layer directly stacked on the bottom of the via 9; the filling layer is isolated from the epitaxial stack through a groove, and the first metal layer 8 is embedded in the groove to form an electrical contact with the first type semiconductor layer 2.

[0075] In this embodiment, the filling layer includes at least one or more stacks of insulating materials and metallic materials, and this embodiment does not limit the specific material type.

[0076] In this embodiment, the substrate has a first long side and a second long side, and a first short side and a second short side.

[0077] In this embodiment, the electrode pads 12 of two adjacent LED light-emitting units extend to the long side of the conductive substrate 1 through the second metal layer 6 and the trench 11.

[0078] In this embodiment, a first insulating layer 5 is also provided on the surface of the trench 11. The first insulating layer 5 covers the second metal layer 6 and exposes the electrode leads of each LED light-emitting unit located on one side edge of the conductive substrate 1; the electrode pad 12 is formed on the exposed part of the electrode lead.

[0079] In this embodiment, the first insulating layer 5 extends to the sidewall of the through hole 9, and the second insulating layer 7 covers the first insulating layer 5.

[0080] This invention also provides a method for manufacturing an integrated LED chip, comprising the following steps:

[0081] S01, such as Figure 3.1A and Figure 3.1B As shown, a growth substrate 10 is provided;

[0082] It is worth mentioning that the type of growth substrate 10 is not limited to the LED chip in this embodiment. For example, the substrate can be, but is not limited to, a sapphire substrate, a silicon substrate, etc.

[0083] S02, such as Figure 3.2A and Figure 3.2B As shown, an epitaxial stack is stacked on the surface of the growth substrate 10. The epitaxial stack includes a first type semiconductor layer 2, an active region 3, and a second type semiconductor layer 4 stacked sequentially along the growth direction.

[0084] In this embodiment, the types of the first type semiconductor layer 2, the active region 3, and the second type semiconductor layer 4 of the epitaxial stack can also be unrestricted. For example, the first type semiconductor layer 2 can be, but is not limited to, an N-type gallium nitride layer, and correspondingly, the second type semiconductor layer 4 can be, but is not limited to, a P-type gallium nitride layer.

[0085] S03, such as Figure 3.3A and Figure 3.3B As shown, several vias 9 are formed in the epitaxial stack by an etching process, and the vias 9 expose part of the surface of the first type semiconductor layer 2.

[0086] S04, such as Figure 3.4A and Figure 3.4B As shown, a first insulating layer 5 is deposited, which covers the epitaxial stack and exposes the bottom surface of each via 9 and a portion of the surface of the adjacent second type semiconductor layer 4.

[0087] S05, such as Figure 3.5A and Figure 3.5B As shown, a second metal layer 6 is formed, which is stacked on the exposed surface of the second type semiconductor layer 4 and extends to the edge of the growth substrate 10 through both sides of the epitaxial stack to form electrode leads;

[0088] S06, such as Figure 3.6A and Figure 3.6BAs shown, a second insulating layer 7 is deposited, which covers the second metal layer 6 and the epitaxial stack and extends to the sidewall of the via 9;

[0089] S07, such as Figure 3.7A and Figure 3.7B As shown, a first metal layer 8 is fabricated, which is stacked on the surface of the second insulating layer 7 and embedded with a through-hole 9 to form a contact with the first type semiconductor layer 2; and the first metal layer 8 is fixed to the conductive substrate 1 by a metal bonding process.

[0090] S08, such as Figure 3.8A and Figure 3.8B As shown, the growth substrate 10 is peeled off;

[0091] S09, such as Figure 3.9A and Figure 3.9B As shown, the epitaxial stack is etched to form a plurality of LED light-emitting units that are isolated from each other by trenches 11, and the trenches 11 expose the first insulating layer 5;

[0092] S10, such as Figure 3.10A and Figure 3.10B As shown, the first insulating layer 5 located on one side edge of the conductive substrate 1 is etched to expose the electrode leads corresponding to each LED light-emitting unit.

[0093] S11, such as Figure 3.11A and Figure 3.11B As shown, electrode pads 12 are deposited and formed on the exposed portion of the electrode leads.

[0094] In a specific embodiment, the first type semiconductor layer 2 is a P-type semiconductor layer, and correspondingly, the second type semiconductor layer 4 is an N-type semiconductor layer; then the second metal layer 6 only needs to meet the conductivity requirements.

[0095] In another specific embodiment, the first type semiconductor layer 2 is an N-type semiconductor layer, and correspondingly, the second type semiconductor layer 4 is a P-type semiconductor layer; then the second metal layer 6 is a metal material layer that can be ohmically contacted and realize light reflection.

[0096] In this embodiment, the through hole 9 is provided with a filling structure.

[0097] In this implementation, step S07 further includes:

[0098] First, a filling structure is formed in the via 9, the filling structure including a filling layer directly stacked on the bottom of the via 9; the filling layer is isolated from the epitaxial stack through a groove, and the first metal layer 8 is embedded in the groove to form an electrical contact with the first type semiconductor layer 2;

[0099] Then, a first metal layer 8 is fabricated, which is stacked on the surface of the second insulating layer 7 and embedded in a groove to form contact with the first type semiconductor layer 2; and the first metal layer 8 is fixed to the conductive substrate 1 by a metal bonding process.

[0100] In this embodiment, the filling structure includes independent epitaxial pillars formed by etching in the epitaxial stack. The independent epitaxial pillars are isolated from the epitaxial stack by grooves, and the first metal layer 8 is embedded in the grooves to form an electrical contact with the first type semiconductor layer 2.

[0101] As can be seen from the above technical solution, the integrated LED chip provided by the present invention includes an epitaxial stack, a second metal layer 6, a second insulating layer 7, and a first metal layer 8 in each LED light-emitting unit; the epitaxial stack is disposed above the conductive substrate 1, and the epitaxial stack includes at least a second type semiconductor layer 4, an active region 3, and a first type semiconductor layer 2 stacked sequentially along a first direction, and the epitaxial stack has a through-hole 9 exposing a portion of the surface of the first type semiconductor layer 2; the first direction is perpendicular to the conductive substrate 1 and points from the conductive substrate 1 to the epitaxial stack; the second metal layer 6 is stacked on the first... The second type semiconductor layer 4 is located on the side of the active region 3 away from the surface of the active region 3 and extends to the edge of the conductive substrate 1 through the trench 11 to form electrode leads. Electrode pads 12 are formed on the edge of the conductive substrate 1 and are connected to the electrode leads. A second insulating layer 7 is provided on the side of the epitaxial stack facing the conductive substrate 1, and covers the second metal layer 6 and the epitaxial stack, extending to the sidewall of the via 9. A first metal layer 8 is stacked on the side of the conductive substrate 1 facing the epitaxial stack and is embedded in the via 9 to form an electrical contact with the first type semiconductor layer 2, so that each LED light-emitting unit forms a common electrode. Thus, each LED light-emitting unit has a common electrode, and another electrode pad 12 is distributed around the integrated LED chip and connected to each LED light-emitting unit through the second metal layer (i.e., electrode leads). The electrode leads of the LED light-emitting units are led out to the edge of the conductive substrate through the first insulating layer in a way that isolates them from adjacent LED light-emitting units. Each is independently set, thereby enabling flexible control of each LED light-emitting unit. Therefore, based on the above configuration, the second metal layer can be electrically connected to the second semiconductor layer of each light-emitting unit, and can also act as a lead to achieve electrical connection with the electrode pads around the integrated LED. The layout of electrode leads and electrode pads is completed at the chip end to achieve integrated packaging, which can effectively save product manufacturing process and labor costs.

[0102] Secondly, the electrode leads of the LED light-emitting unit are isolated by the first insulating layer 5 and disposed below the adjacent LED light-emitting unit and led out to the edge of the conductive substrate 1. This can effectively reduce the spacing between each LED light-emitting unit and thus increase the luminous density.

[0103] The method for manufacturing an integrated LED chip provided by this invention achieves the beneficial effects of the aforementioned integrated LED chip while being simple, convenient, and easy to mass-produce.

[0104] Example 2

[0105] like Figure 4 , 5 As shown, an integrated LED chip differs from Embodiment 1 in that each of the LED light-emitting units forms an integral structure L, without the need for mutual isolation via trenches; and the electrode leads of the LED light-emitting units are isolated below adjacent LED light-emitting units by the first insulating layer 5 and led out to the edge of the conductive substrate 1.

[0106] Accordingly, the method for manufacturing an integrated LED chip differs from that of Embodiment 1 above in that step S09 is replaced by etching the edge of the epitaxial stack and exposing the first insulating layer 5.

[0107] Thus, the integrated LED chip and its manufacturing method provided in this embodiment, compared with the above embodiment 1, do not require a trench cutting process. Furthermore, since the electrode leads of its LED light-emitting unit are isolated and disposed below the adjacent LED light-emitting unit through the first insulating layer 5 and led out to the edge of the conductive substrate, the setting of each LED light-emitting unit does not require any spacing, thereby effectively increasing the luminous density.

[0108] The apparatus provided in this embodiment of the invention operates on the same principle and produces the same technical effects as the aforementioned method embodiments. For the sake of brevity, any parts not mentioned in the apparatus embodiments can be referred to the corresponding content in the aforementioned method embodiments. Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, apparatuses, and units described above can all be referred to the corresponding processes in the aforementioned method embodiments, and will not be repeated here.

[0109] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0110] It should also be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that an article or apparatus comprising a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such an article or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the article or apparatus that includes the aforementioned element.

[0111] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An integrated LED chip, characterized in that, include: A conductive substrate, a plurality of LED light-emitting units formed on the surface of the conductive substrate, electrode pads and electrode leads; Each of the LED light-emitting units includes an epitaxial stack, a first insulating layer, a second metal layer, and a first metal layer; the epitaxial stack is disposed above the conductive substrate, and the epitaxial stack includes at least a second type semiconductor layer, an active region, and a first type semiconductor layer stacked sequentially along a first direction, and the epitaxial stack has a through-hole exposing a portion of the surface of the first type semiconductor layer; the first direction is perpendicular to the conductive substrate and extends from the conductive substrate to the epitaxial stack; The second metal layer includes a metal material layer that is ohmically contactable and enables light reflection. It is stacked on the side surface of the second type semiconductor layer away from the active region and extends to the edge of the conductive substrate to form the electrode lead. The electrode pad is formed on the edge of the conductive substrate and is connected to the electrode lead. The first insulating layer covers the epitaxial stack and exposes the bottom surface of each via and a portion of the surface of the adjacent second type semiconductor layer; The second insulating layer is disposed on the side of the epitaxial stack facing the conductive substrate, and covers the second metal layer and the epitaxial stack and extends to the sidewall of the via. The first metal layer is stacked on the side surface of the conductive substrate facing the epitaxial stack; and the through-hole is embedded to form an electrical contact with the first type of semiconductor layer, so that each of the LED light-emitting units forms a common electrode; Each of the LED light-emitting units is formed on the surface of the conductive substrate by being isolated from each other by trenches; The through hole is provided with a filling structure; The filling structure includes independent epitaxial pillars formed by etching in the epitaxial stack. The independent epitaxial pillars are isolated from the epitaxial stack by grooves, and the first metal layer is embedded in the grooves to form an electrical contact with the first type semiconductor layer. Alternatively, the filling structure includes a filling layer directly stacked at the bottom of the via; the filling layer is isolated from the epitaxial stack by a groove, and the first metal layer is embedded in the groove to form an electrical contact with the first type of semiconductor layer.

2. The integrated LED chip according to claim 1, characterized in that, Each of the LED light-emitting units is integrated, and the electrode leads of the LED light-emitting units are isolated by the first insulating layer and disposed below the adjacent LED light-emitting units and led out to the edge of the conductive substrate.

3. The integrated LED chip according to claim 1, characterized in that, in, The electrode leads of the LED light-emitting unit are isolated by the first insulating layer and disposed below the adjacent LED light-emitting unit and led out to the edge of the conductive substrate; or, the electrode leads extend to the edge of the conductive substrate through the trench.

4. The integrated LED chip according to claim 1, characterized in that, The first metal layer completely fills the through hole.

5. The integrated LED chip according to claim 1, characterized in that, The filling layer comprises at least one or more stacks of insulating materials and metallic materials.

6. The integrated LED chip according to claim 1, characterized in that, The substrate has a first long side and a second long side, and a first short side and a second short side.

7. The integrated LED chip according to claim 6, characterized in that, At least some of the LED light-emitting units have electrode leads that extend to the long side of the conductive substrate.

8. A method for manufacturing an integrated LED chip, characterized in that, Includes the following steps: S01, Provide a growth substrate; S02. An epitaxial stack is stacked on the surface of the growth substrate, the epitaxial stack comprising a first type semiconductor layer, an active region and a second type semiconductor layer stacked sequentially along the growth direction; S03. A plurality of through holes are formed in the epitaxial stack by an etching process, wherein the through holes expose a portion of the surface of the first type semiconductor layer; S04. Deposit a first insulating layer, the first insulating layer covering the epitaxial stack and exposing the bottom surface of each of the vias and a portion of the surface of the adjacent second type semiconductor layer; S05. Form a second metal layer, the second metal layer comprising a metal material layer that can be ohmically contacted and realize light reflection, which is stacked on the exposed surface of the second type semiconductor layer and extends to the edge of the growth substrate through both sides of the epitaxial stack to form electrode leads; S06. Deposit a second insulating layer that covers the second metal layer and the epitaxial stack and extends to the sidewall of the via. S07. Fabricate a first metal layer, which is stacked on the surface of the second insulating layer and embedded in the through-hole to form contact with the first type of semiconductor layer; The first metal layer is then fixed to the conductive substrate using a metal bonding process. S08. Peel off the growth substrate; S09. Etch the edges of the epitaxial stack to expose the first insulating layer; Alternatively, the epitaxial stack can be etched to form a plurality of LED light-emitting units isolated from each other by trenches, and the trenches expose the first insulating layer; S10. Etch the first insulating layer located at one edge of the conductive substrate to expose the electrode leads corresponding to each LED light-emitting unit. S11. An electrode pad is deposited on the exposed portion of the electrode lead to form an electrode pad.

9. The method for manufacturing an integrated LED chip according to claim 8, characterized in that, Each of the LED light-emitting units is integrated, and the electrode leads of the LED light-emitting units are isolated by the first insulating layer and disposed below the adjacent LED light-emitting units and led out to the edge of the conductive substrate.

10. The method for manufacturing an integrated LED chip according to claim 8, characterized in that, Each of the LED light-emitting units is isolated from each other by trenches and is formed on the surface of the conductive substrate; The electrode leads of the LED light-emitting unit are isolated by the first insulating layer and disposed below the adjacent LED light-emitting unit and led out to the edge of the conductive substrate; or, the electrode leads extend to the edge of the conductive substrate through the trench.

11. The method for manufacturing an integrated LED chip according to claim 8, characterized in that, The through hole is provided with a filling structure.

12. The method for manufacturing an integrated LED chip according to claim 11, characterized in that, Step S07 also includes: First, a filling structure is formed within the via, the filling structure including a filling layer directly stacked at the bottom of the via; the filling layer is isolated from the epitaxial stack by a groove, and the first metal layer is embedded in the groove to form an electrical contact with the first type semiconductor layer; Then, a first metal layer is fabricated, which is stacked on the surface of the second insulating layer and embedded in the groove to form contact with the first type of semiconductor layer; and the first metal layer is fixed to the conductive substrate by a metal bonding process.

13. The method for manufacturing an integrated LED chip according to claim 11, characterized in that, The filling structure includes independent epitaxial pillars formed by etching in the epitaxial stack. The independent epitaxial pillars are isolated from the epitaxial stack by grooves, and the first metal layer is embedded in the grooves to form an electrical contact with the first type semiconductor layer.

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