Confinement features for laser molding and coupling with silicon photonic components

Abstract

The present invention relates to confinement features for molding lasers and coupling to silicon photonic components. A laser structure includes: a dielectric matrix formed of a first material; a laser source formed of a semiconductor material and formed within the dielectric matrix; and a plurality of side confinement features formed within the dielectric matrix and extending parallel to and along the length of the laser source. The plurality of side confinement features are formed of the semiconductor material.

Description

Technical Field

[0001] This disclosure generally relates to photonic integrated circuits, and more specifically to mode shaping and confinement features for enhancing coupling with silicon (Si) photonic components for III-V lasers. Background Technology

[0002] Silicon photonics is becoming the mainstream data transmission solution for next-generation data centers, high-performance computers, and many emerging applications. Silicon-based photonic integrated circuits (PICs) promise to provide a low-cost, high-volume solution for next-generation high-speed, energy-efficient optical interconnects. While significant progress has been made at both the component and system levels, integrating low-cost, high-efficiency laser sources (such as III-V semiconductor lasers) onto silicon-based PICs remains a major challenge. For example, effective coupling between III-V semiconductor lasers and silicon photonic waveguides remains a critical issue due to mode distribution mismatch. Summary of the Invention

[0003] Generally, this disclosure relates to photonic integrated circuits, and more specifically to molding and confining features for enhancing coupling with silicon (Si) photonic components in III-V lasers. An exemplary laser structure disclosed herein includes: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along the length of the laser source, the plurality of side confining features being formed of the semiconductor material.

[0004] Another exemplary laser structure disclosed herein includes: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and comprising a semiconductor material; and a plurality of vertical confinement features formed within the dielectric matrix and parallel to and extending along the length of the laser source, the plurality of vertical confinement features comprising the semiconductor material.

[0005] An exemplary laser system disclosed herein includes: a laser source; and a waveguide optically coupled to the laser source, wherein the laser source includes: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and comprising a semiconductor material; and a plurality of limiting features formed within the dielectric matrix and extending parallel to and along the length of the laser source, the plurality of limiting features comprising the semiconductor material, wherein the plurality of limiting features are formed on at least one of a side, a top, and a bottom of the laser source, and wherein the plurality of limiting features are configured to adjust the size and profile of the mode of the laser source to match the mode of the waveguide. Attached Figure Description

[0006] This disclosure can be understood by referring to the following description taken in conjunction with the accompanying drawings, wherein like reference numerals denote like elements.

[0007] Figure 1 A cross-sectional view of a III-V semiconductor laser structure with symmetrically arranged side-confined features according to various embodiments of the present disclosure is shown.

[0008] Figure 2 Various embodiments according to this disclosure Figure 1 A plan view of the laser core and side confinement features.

[0009] Figure 3 A cross-sectional view of another III-V semiconductor laser structure including lateral confinement features according to various embodiments of the present disclosure is shown.

[0010] Figure 4 Various embodiments according to this disclosure Figure 3 A plan view of the laser core and side confinement features.

[0011] Figure 5 A cross-sectional view of another III-V semiconductor laser structure including lateral confinement features according to various embodiments of the present disclosure is shown.

[0012] Figure 6 Various embodiments according to this disclosure Figure 5 A plan view of the laser core and side confinement features.

[0013] Figure 7 A cross-sectional view of another III-V semiconductor laser structure including lateral confinement features according to various embodiments of the present disclosure is shown.

[0014] Figure 8 Various embodiments according to this disclosure Figure 7 A plan view of the laser core and side confinement features.

[0015] Figure 9 A cross-sectional view of another III-V semiconductor laser structure including lateral confinement features according to various embodiments of the present disclosure is shown.

[0016] Figure 10 Various embodiments according to this disclosure Figure 9 A plan view of the laser core and side confinement features.

[0017] Figure 11 A cross-sectional view of another III-V semiconductor laser structure including lateral confinement features according to various embodiments of the present disclosure is shown.

[0018] Figure 12 A cross-sectional view of a III-V semiconductor laser structure including a vertically confined feature, according to various embodiments of the present disclosure, is shown.

[0019] Figure 13 Various embodiments according to this disclosure Figure 12 A side perspective view of the laser core and vertically confined features.

[0020] Figure 14 A cross-sectional view of another III-V semiconductor laser structure including a vertically confined feature, according to various embodiments of the present disclosure, is shown.

[0021] Figure 15 Various embodiments according to this disclosure Figure 14 A side perspective view of the laser core and vertically confined features.

[0022] Figure 16 A cross-sectional view of another III-V semiconductor laser structure including a vertically confined feature, according to various embodiments of the present disclosure, is shown.

[0023] Figure 17 Various embodiments according to this disclosure Figure 16 A side perspective view of the laser core and vertically confined features.

[0024] Figure 18 A cross-sectional view of another III-V semiconductor laser structure including a vertically confined feature, according to various embodiments of the present disclosure, is shown.

[0025] Figure 19 Various embodiments according to this disclosure Figure 18 A side perspective view of the laser core and vertically confined features.

[0026] Figure 20 A cross-sectional view of another III-V semiconductor laser structure including a vertically confined feature, according to various embodiments of the present disclosure, is shown.

[0027] Figure 21 Various embodiments according to this disclosure are shown. Figure 20 A cross-sectional view of the laser core and vertical confinement features.

[0028] Figure 22-28 A cross-sectional view is shown of a process for forming a III-V semiconductor laser structure with lateral confinement features according to various embodiments of the present disclosure.

[0029] Figures 29-33 A cross-sectional view is shown of a process for forming a III-V semiconductor laser structure with vertical confinement features according to various embodiments of the present disclosure.

[0030] While the subject matter disclosed herein is susceptible to various modifications and alternatives, specific embodiments thereof have been illustrated by way of example in the accompanying drawings and described in detail herein. However, it should be understood that the description of specific embodiments herein is not intended to limit this disclosure to the particular forms disclosed, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and scope of this disclosure as defined by the appended claims. Detailed Implementation

[0031] In the following description, reference is made to the accompanying drawings, which form a part thereof, and which illustrate specific exemplary embodiments in which the present teachings may be practiced. These embodiments have been described in sufficient detail to enable those skilled in the art to practice the present teachings, and it should be understood that other embodiments may be used and changes may be made without departing from the scope of the present teachings. Therefore, the following description is merely exemplary.

[0032] The words and phrases used herein should be understood and interpreted in accordance with the understanding of those skilled in the art. Specific definitions of terms or phrases, that is, definitions that differ from the common and customary meanings understood by those skilled in the art, are not intended to be implied by the consistent use of terms or phrases herein. If a term or phrase is intended to have a specific meaning, that is, a meaning different from that understood by those skilled in the art, such specific definition will be clearly stated in the specification by way of providing the specific definition of the term or phrase directly and explicitly.

[0033] This disclosure generally relates to III-V semiconductor lasers integrated with various configurations of side and / or vertical confinement features. The laser core (laser medium) and confinement features can be formed from a III-V semiconductor material with a high refractive index and can be embedded in a metamaterial (e.g., a dielectric matrix) with a refractive index lower than that of the laser core and confinement features. The side and / or vertical confinement features can be formed in symmetrical and / or asymmetrical configurations, depending on, for example, the geometry and mode shape of the waveguide (e.g., a silicon (Si) inverse taper waveguide) to which the laser core is coupled. The side and / or vertical confinement features can be selected to adjust the mode size and profile of the laser to reduce mode mismatch between the III-V semiconductor laser and the waveguide, thereby improving coupling efficiency.

[0034] Now for reference Figure 1 A cross-sectional view of a III-V semiconductor laser structure 10 (hereinafter referred to as III-V laser 10) according to an embodiment is shown. As shown, the III-V laser 10 may include a laser core 12 formed of a III-V semiconductor material having a high refractive index (e.g., >2.0) and embedded in a dielectric matrix 14 formed of a material with a refractive index lower than that of the laser core 12. According to an embodiment, the laser core 12 may be formed of a III-V semiconductor material such as indium gallium arsenide phosphide (InGaAsP). Other suitable III-V semiconductor materials may also be used to form the laser core 12, including, for example, InCaAs, InCaASN, GaAsSb, AlGaAs, or GaAs. The dielectric matrix 14 may be formed of doped indium phosphide (InP) or other suitable materials (e.g., InAs and InSb).

[0035] The dielectric matrix 14 may be formed between n- and p-doped layers 16, 18 of InP or other suitable materials (e.g., InAs and InSb). A portion of the dielectric matrix 14 adjacent to the n-doped layer 16 of InP may include an n-doped portion 20 of InP formed between p-doped portions 22, 24. A portion of the dielectric matrix 14 adjacent to the p-doped layer 18 of InP may include a p-doped portion 26 of InP formed between n-doped portions 28, 30. N-type dopants may include, but are not limited to, phosphorus (P), arsenic (As), and antimony (Sb), and p-type dopants may include, but are not limited to, boron (B), indium (In), and gallium (Ga).

[0036] According to an embodiment, one or more side-mounted limiting features 40 may be formed adjacent to the laser core 12. For example... Figure 1As shown, for example, a plurality of symmetrically arranged side confinement features 40 can be formed laterally adjacent to the laser core 12 in the p-doped portions 22, 24 of InP. According to an embodiment, the side confinement features 40 can be formed of the same high-refractive-index III-V semiconductor material (e.g., InGaAsP) as the laser core. Other high-refractive-index III-V semiconductor materials (e.g., InCaAs, InCaASN, GaAsSb, AlGaAs, or GaAs) can also be used to form the side confinement features 40. In some embodiments, the laser core 12 and the side confinement features 40 can be formed of different III-V semiconductor materials. The plurality of symmetrically arranged side confinement features 40 formed in the p-doped portions 22, 24 of InP on each side of the laser core 12 can have the same spacing and duty cycle. The side confinement features 40 can be formed simultaneously with the laser core 12 and, according to an embodiment, can have the same height 40H.

[0037] According to an embodiment, the side-confining feature 40 (and other side-confining features 40 described below) can be configured to adjust the mode size and profile of the III-V laser 10 to reduce mode mismatch between the III-V laser 10 and the waveguide of the photonic integrated circuit. For example, as Figure 1 As shown, the side confinement feature can be configured for use with the inverted conical Si waveguide 52 of the Si-based photonic integrated circuit 50.

[0038] Figure 1 The plan view of the side confinement feature 40 and the laser core 12 in Figure 2 As shown in the figure. According to an embodiment, refer to Figure 1 and Figure 2 The side confinement features 40 can be symmetrically formed on opposite sides of the laser core 12 in the p-doped portions 22 and 24 of InP. The laser core 12 can have a width 12W of about 1 μm to about 5 μm and a height 12H of about 50 nm to about 300 nm. The side confinement features 40 can have a height 40H of about 50 nm to about 300 nm and a width 40W of about 50 nm to about 1 μm. Typically, the width 40W of the side confinement features 40 is smaller than the width 12W of the laser core 12. The side confinement features 40 in the p-doped portions 22 and 24 of InP can be separated from each other by a distance 40S. The spacing distance 40S between adjacent side confinement features 40 can be about 50 nm to about 1 μm. The spacing distance 12S between the laser core 12 and adjacent side confinement features 40 can be about 50 nm to 1 μm.

[0039] like Figure 2As shown, the side confinement features 40 in the p-doped portions 22, 24 of InP can be parallel to the laser core 12 and extend along the length of the laser core 12, and can have a length 40L less than or equal to the length 12L of the laser core 12. In this embodiment and any other embodiments including the side confinement features 40 described herein, the distal end 12E of the laser core 12 can be aligned with the distal end 40E of each side confinement feature 40. This alignment ensures that the end 12E of the side confinement feature toward the gain layer (laser core 12) reshapes the mode shape of the III-V laser 10. However, in practice, some slight offset may be allowed (e.g., the end 40E of the side confinement feature 40 may be located slightly ahead or slightly behind the end 12E of the laser core).

[0040] According to an embodiment, the side-limiting feature 40 may have a length 40L of about 10 μm to about 10 mm. Generally, according to any embodiment including the side-limiting feature 40 described herein, the number and / or configuration (e.g., height, width, length) of the side-limiting features 40, and / or the arrangement of the side-limiting features 40 relative to the laser core 12 and relative to each other (e.g., spacing distances 40S, 12S) may vary depending on the application and may be modified as needed to address mode mismatch between the III-V group laser 10 and waveguides or other components of the photonic integrated circuit.

[0041] Other embodiments of the III-V group laser 10 may include one or more asymmetrically arranged lateral confinement features 40. For example, as Figure 3 and Figure 4 As shown, the number of side confinement features 40 formed on each side of the laser core 12 can vary. In this example, three side confinement features 40 can be formed in the p-doped portion 22 of InP, while two side confinement features 40 can be formed in the p-doped portion 24 of InP, wherein all side confinement features 40 can have the same height 40H, length 40L, width 40W, and spacing 40S.

[0042] In other embodiments, the number, configuration, and / or arrangement of the side limiting features 40 can vary on each side of the laser core 12. For example, in Figure 5 and Figure 6In this embodiment, two lateral confinement features 40 can be formed in the p-doped portion 22 of InP, each having a height 40H, a first width 40W1, and a first spacing distance 40S1, while three lateral confinement features 40 can be formed in the p-doped portion 24 of InP, each having a height 40H, a second width 40W2 (where 40W2 > 40W1), and a second spacing distance 40S2. In this example, the spacing 40S2 between the lateral confinement features 40 in the p-doped portion 24 of InP can be different from (e.g., smaller than) the spacing 40S1 between the lateral confinement features 40 in the p-doped portion 22 of InP. In this regard, the asymmetrically arranged lateral confinement features 40 can be described as having different spacing and duty cycles on each side of the laser core 12.

[0043] Another embodiment of a III-V laser 10 with an asymmetrical arrangement of lateral confinement features 40 is described in Figure 7 and Figure 8 As shown in the figure, the width and spacing of the lateral confinement features 40 of one or both of the p-doped InP portions 22 and 24 adjacent to the laser core 12 can vary.

[0044] In the above embodiments, all side limiting features 40 can have the same height 40H and length 40L. However, in other embodiments, such as Figure 9 and Figure 10 As shown, the side confinement features 40 may have different heights and / or lengths. For example, one or more of the side confinement features 40 in the p-doped portions 22 and 24 of InP may have a height 40H1 and a length 40L1, while one or more of the other side confinement features 40 in the p-doped portions 22 and 24 of InP may have different heights 40H2 and lengths 40L2.

[0045] Figure 11 A III-V group laser 10 with multi-layer side-confining features 40 according to an embodiment is shown. For example, Figure 11 It shows Figure 1 A III-V group laser 10 is provided, wherein additional side confinement features 40 are formed in the n-doped portions 28, 30 of InP located below and on the sides of the laser core 12. As shown, the side confinement features 40 formed in the n-doped portions 28, 30 of InP can have the same configuration / arrangement as the side confinement features 40 formed in the p-doped portions 22, 24 of InP. However, generally, the side confinement features 40 formed in the p-doped portions 22, 24 of InP and / or formed in the n-doped portions 28, 30 of InP can be configured / arranged according to any embodiment described herein.

[0046] refer to Figure 12 and Figure 13 According to another embodiment, the III-V group laser 10 may include one or more vertically confining features 60 formed adjacent to (e.g., vertically above and / or below) the laser core 12. For example, Figure 12 and Figure 13 An embodiment is shown including a plurality of vertical confinement features 60 formed directly above the laser core 12 in the n-doped portion 20 of InP. Like the side confinement features 40, the vertical confinement features 60 can be formed of the same high-refractive-index semiconductor material (e.g., InGaAsP) as the laser core 12, or they can be formed of other suitable high-refractive-index III-V semiconductor materials, including, for example, InCaAs, InCaASN, GaAsSb, AlGaAs, or GaAs. In some embodiments, the laser core 12 and the vertical confinement features 60 can be formed of different III-V semiconductor materials. The vertical confinement features 60 can be formed simultaneously with the laser core 12 and, according to embodiments, can have the same height 60H. Furthermore, the vertical confinement features 60 can be used in conjunction with any embodiment of the side confinement features 40 described herein (e.g., as shown in...). Figure 12 (As shown by the dashed line in the diagram) or it can be used without the lateral limiting feature 40.

[0047] Figure 12 The vertical limiting feature 60 and the side view of the laser core 12 are in Figure 13 As shown in the figure. According to an embodiment, the laser core 12 may have a width 12W of about 1 μm to about 5 μm and a height 12H of about 50 nm to about 300 nm. The vertical limiting feature 60 may have a height 60H of about 5 nm to about 200 nm and a width 60W corresponding to (e.g., the same as) the width 12W of the laser core 12 (e.g., about 50 nm to about 1 μm). Generally, the height 60H of the vertical limiting feature 60 may be smaller than the height 12H of the laser core 12. As shown, the vertical limiting features 60 may be spaced at a distance 60S of about 5 nm to about 50 nm, which may be the same as or different from the spacing distance 12S between the lowermost vertical limiting feature 60 and the laser core 12. The spacing distance 12S between the laser core 12 and the adjacent vertical limiting feature 60 may be about 5 nm to about 50 nm. In some embodiments, the vertical limiting feature 60 may have a different width 60W or a width different from the width 12W of the laser core 12.

[0048] like Figure 13As shown, the vertical limiting feature 60 may be parallel to the laser core 12 and extend along the length of the laser core 12, and may have a length 60L less than or equal to the length 12L of the laser core 12. For example, according to an embodiment, the vertical limiting feature 60 may have a length 60L of about 10 μm to about 10 mm. In this embodiment and any other embodiment including the vertical limiting feature 60 described herein, the distal end 12E of the laser core 12 may be aligned with the distal end 60E of each vertical limiting feature 60. Generally, according to any embodiment including the vertical limiting feature 60 described herein, the number and / or configuration (e.g., height, width, length) of the vertical limiting features 60, and / or the arrangement of the vertical limiting features 60 relative to the laser core 12 and relative to each other (e.g., spacing distances 60S, 12S) may vary depending on the application and may be modified as needed to address mode mismatch between the III-V group laser 10 and waveguides or other components of the photonic integrated circuit.

[0049] Other embodiments of the III-V group laser 10 with vertical confinement feature 60 are in Figures 14 to 21 As shown in [the image]. For example, in [the image]. Figure 14 and Figure 15 In the process, a vertical confinement feature 60 with the same height 60H and width 60W can be formed in the p-doped portion 26 of InP directly below the laser core 12, instead of as Figure 12 and Figure 13 As in the example, the n-doped portion 20 is formed directly above the laser core 12. Furthermore, as... Figure 16 and Figure 17 As shown, a symmetrical arrangement of vertical confinement features 60 with the same height 60H and width 60W can be formed above and below the laser core 12 in the n-doped portion 20 and the p-doped portion 26, respectively. In this symmetrical example, the vertical confinement features 60 formed above and below the laser core 12 can have the same spacing 60S and 12S.

[0050] like Figure 18 and Figure 19 As shown, vertical confinement features 60 with the same width but different heights 60H1 and 60H2 can be formed in the n-doped portion 20 above the laser core 12. Figure 20 and Figure 21 As further shown, the number, spacing, and / or height of the vertical limiting features 60 formed above and below the laser core 12 can vary. Generally, the number, spacing, arrangement, and / or configuration of the vertical limiting features 60 relative to the laser core 12 can vary depending on the application and can be modified as needed to address laser mode mismatch.

[0051] An exemplary process for forming a III-V laser 10 having lateral confinement features 40 is described in Figures 22 to 28 As shown in the image.

[0052] Figure 22 A semiconductor substrate 100 is shown, comprising an undoped layer 102 of indium phosphide (InP) covering a p-doped layer 104 of InP. (See diagram) Figure 23 As shown, one or more doping processes 106 (e.g., ion implantation) can be performed to form an n-doped portion 108 of InP, an n-doped portion 110 of InP, and a p-doped portion 112 of InP between the n-doped portions 108 and 110 of InP. After doping, as... Figure 24 As shown, an InGaAsP layer 114 can be formed (e.g., by epitaxy) on top of the doped portions 108, 110, 112 of InP.

[0053] Figure 25 The image shows the result after performing one or more masking / etching steps to selectively remove portions of the InGaAsP layer 114. Figure 24 The structure. Comparison Figure 25 and Figure 1 It can be seen that the remaining portion 116 of the InGaAsP layer 114 corresponds to the laser core 12, and the remaining portion 118 of the InGaAsP layer 114 corresponds to... Figure 1 The side confinement feature 40 of the III-V group laser 10 shown.

[0054] Figure 26 The diagram illustrates the formation (e.g., by epitaxy) of an undoped layer 120 of indium phosphide (InP) over the remaining portions 116, 118 of the InGaAsP layer 114 and the doped portions 108, 110, 112 of InP. Figure 25 The structure. For example... Figure 27 As shown, one or more doping processes 122 (e.g., ion implantation) can be performed to form p-doped portions 124, p-doped portions 126, and n-doped portions 128 of InP between the p-doped portions 124 and 126. Figure 28 This illustrates the process after forming an InP n-doped layer 130 over the InP doped portions 124, 126, and 128. Figure 27 The structure.

[0055] An exemplary process for forming a III-V laser 10 having a vertical confinement feature 60 is described in Figures 29 to 33 As shown in the image.

[0056] Figure 29 The image shows the result after performing one or more masking / etching steps to selectively remove portions of the InGaAsP layer 114. Figure 24 The structure. Comparison Figure 29 and Figure 1 It can be seen that the remaining portion 116 of the InGaAsP layer 114 corresponds to the laser core 12 of the III-V laser 10.

[0057] Figure 30 The diagram illustrates the formation (e.g., by epitaxy) of an undoped InP layer (not shown) over the remaining portion 116 of the InGaAsP layer 114 and the doped portions 108, 110, 112 of InP, followed by doping via one or more doping processes 132 (e.g., ion implantation). Figure 29 The structure is formed by this step. The p-doped portion 134, the p-doped portion 136, and the n-doped portion 138 between the n-doped portions 134 and 136 of InP.

[0058] Figure 31 This shows the result after several additional processes were performed. Figure 30 The structure is as follows. One or more masking / etching steps have been performed to selectively remove a portion of the n-doped portion 138 of InP. An InGaAsP layer 140 is then formed (e.g., by epitaxy) on the remaining n-doped portion 138 of InP.

[0059] Figure 32 This shows the result after several additional processes were performed. Figure 31 The structure is as follows: After forming an n-doped InP layer 142 on top of the InGaAsP layer 140, another InGaAsP layer 144 is formed on top of the n-doped InP layer 142.

[0060] Figure 33 This shows the result after several additional processes were performed. Figure 32 The structure is as follows: After forming an n-doped InP layer 146 on top of the InGaAsP layer 144, an n-doped InP layer 148 is formed on top of the doped portions 134, 136, and 146. (Comparison) Figure 33 and Figure 12 It can be seen that the remaining portion 116 of the InGaAsP layer 114 corresponds to the laser core 12, and the InGaAsP layers 142 and 144 correspond to... Figure 12 The vertical confinement feature 60 of the III-V group laser 10 shown.

[0061] The use of lateral confinement features and / or vertical confinement features in III-V lasers improves the coupling efficiency between the III-V laser and the waveguide of a photonic integrated circuit (e.g., an inverted tapered Si waveguide for a Si-based photonic integrated circuit). The lateral confinement features and / or vertical confinement features can be selectively configured as needed to adjust the mode size of the III-V laser (e.g., along the lateral direction) to better match the mode size of the waveguide, thereby improving coupling efficiency.

[0062] The above method is used for the manufacture of photonic integrated circuit (PIC) chips. The resulting PIC chips can be distributed by the manufacturer in raw wafer form (i.e., as a single wafer with multiple unpackaged chips), as bare die, or in package form. In the latter case, the chip is mounted in a single-chip package (e.g., a plastic carrier with leads attached to a motherboard or other higher-level carrier) or a multi-chip package (e.g., a ceramic carrier with surface interconnects and / or buried interconnects). In any case, the chip is then integrated with other chips, discrete circuit elements, and / or other signal processing devices as part of (a) an intermediate product (e.g., a motherboard) or (b) a final product. The final product can be any product that includes integrated circuit chips, ranging from toys and other low-end applications to advanced computer products with displays, keyboards or other input devices, and central processing units.

[0063] The specific embodiments disclosed above are merely illustrative, as the invention can be modified and practiced in different but equivalent ways, as will be apparent to those skilled in the art who benefit from the teachings herein. For example, the process steps described above may be performed in different orders. Furthermore, the details of the constructions or designs shown herein are not intended to be limiting, except as described in the following claims. It is therefore apparent that the specific embodiments disclosed above can be altered or modified, and all such changes are considered to be within the scope and spirit of this disclosure. Note that the use of terms such as “first,” “second,” “third,” or “fourth” in this specification and the appended claims to describe various processes or structures is merely a shorthand reference to such steps / structures and does not necessarily imply that such steps / structures are performed / formed in that ordered order. Of course, depending on the precise language of the claims, an ordered sequence of these processes may or may not be required. Therefore, the protection sought herein is as set forth in the following claims.

Claims

1. A laser structure, comprising: The dielectric matrix formed from the first material; A laser source formed within the dielectric matrix and comprising semiconductor material; as well as Multiple lateral confinement features are formed within the dielectric matrix and extend parallel to and along the length of the laser source, the multiple lateral confinement features comprising the semiconductor material.

2. The laser structure according to claim 1, wherein the refractive index of the first material is lower than the refractive index of the semiconductor material.

3. The laser structure according to claim 1, wherein the semiconductor material is a III-V group semiconductor material.

4. The laser structure according to claim 3, wherein the semiconductor material comprises indium gallium arsenide phosphide (InGaAsP).

5. The laser structure according to claim 1, wherein the first material comprises indium phosphide (InP).

6. The laser structure according to claim 1, wherein the plurality of side-confining features include: A first set of lateral limiting features is formed within the dielectric matrix and extends parallel to and along the length of the first side of the laser source. as well as The second set of lateral limiting features is formed within the dielectric matrix and is parallel to and extends along the length of the second opposite side of the laser source.

7. The laser structure according to claim 6, wherein the first set of side-confining features and the second set of side-confining features are arranged symmetrically with respect to the laser source.

8. The laser structure according to claim 6, wherein the first set of side-confining features and the second set of side-confining features are arranged asymmetrically with respect to the laser source.

9. The laser structure of claim 1, wherein the laser source is formed in a region of a first doping type of the dielectric matrix, and wherein the plurality of side-confining features are formed in a region of a second doping type of the dielectric matrix.

10. A laser structure, comprising: The dielectric matrix formed from the first material; A laser source formed within the dielectric matrix and comprising semiconductor material; as well as Multiple vertical confinement features are formed within the dielectric matrix and extend parallel to and along the length of the laser source, the multiple vertical confinement features comprising the semiconductor material.

11. The laser structure according to claim 10, wherein the refractive index of the first material is lower than the refractive index of the semiconductor material.

12. The laser structure according to claim 10, wherein the semiconductor material is a III-V group semiconductor material.

13. The laser structure according to claim 12, wherein the semiconductor material comprises indium gallium arsenide phosphide (InGaAsP).

14. The laser structure of claim 10, wherein the first material comprises indium phosphide (InP).

15. The laser structure of claim 10, wherein the plurality of vertical confinement features are formed in the dielectric matrix as one of the following: Located vertically above the laser source; Located vertically below the laser source; and Located vertically above and below the laser source.

16. The laser structure according to claim 15, wherein the plurality of vertical confinement features are arranged symmetrically with respect to the laser source.

17. The laser structure of claim 15, wherein the plurality of vertical confinement features are arranged asymmetrically relative to the laser source.

18. The laser structure of claim 10, wherein the laser source is formed in a region of a first doping type of the dielectric matrix, and wherein at least a portion of the plurality of vertical confinement features is formed in one or more regions of a second doping type of the dielectric matrix.

19. A laser system comprising: Laser source; as well as The waveguide optically coupled to the laser source The laser source includes: The dielectric matrix formed from the first material; A laser source formed within the dielectric matrix and comprising a semiconductor material; and Multiple limiting features are formed within the dielectric matrix and extend parallel to and along the length of the laser source, the multiple limiting features comprising the semiconductor material, wherein the multiple limiting features are formed on at least one of multiple sides, top and bottom of the laser source, and wherein the multiple limiting features are configured to adjust the size and profile of the mode of the laser source to match the mode of the waveguide.

20. The laser system of claim 19, wherein the plurality of limiting features are arranged symmetrically with respect to the laser source.

Images