Semiconductor heat treatment equipment

Abstract

The application discloses a semiconductor heat treatment equipment, and belongs to the technical field of semiconductor process equipment. The semiconductor heat treatment equipment comprises an inner chamber pipe, the inner chamber pipe has an inner circumferential surface; an exhaust pipe, the exhaust pipe is communicated with the inner chamber pipe; and an exhaust structure, the exhaust structure is arranged on the inner circumferential surface, an exhaust cavity is formed between the exhaust structure and the inner chamber pipe, the exhaust cavity is communicated with the exhaust pipe, an exhaust port is arranged on the exhaust structure, and the total exhaust area of the exhaust port is greater than a first preset area, so that the gas in the inner chamber pipe flows into the exhaust cavity in a diffusion manner. The above scheme can solve the problems that the semiconductor heat treatment equipment is prone to form residues, the pressure of a process chamber is difficult to reduce to a target value in a short time, and the temperature field of the inner chamber pipe is uneven.

Description

Technical Field

[0001] The present application belongs to the technical field of semiconductor process equipment, and specifically relates to a semiconductor heat treatment equipment. Background Art

[0002] Diffusion furnaces are a crucial piece of process equipment in semiconductor production lines, used for diffusion, oxidation, annealing, and other processes on various components. For example, in integrated circuits, diffusion furnaces are used for depositing thin films such as insulating and dielectric layers.

[0003] A diffusion furnace primarily consists of a process chamber and components such as a gas injector installed within the process chamber. The chamber tube within the process chamber is equipped with an exhaust slit, a protrusion, and an exhaust port. An exhaust cavity is formed between the exhaust slit and the protrusion, and the exhaust cavity is connected to the exhaust port. Wafers can be placed within the process chamber, and the gas ejected from the gas injector reaches the wafer surface, enabling deposition. After deposition is complete, unreacted gases and byproducts within the process chamber can enter the exhaust cavity through the exhaust slit and be discharged through the exhaust port.

[0004] During the operation of a diffusion furnace, when gas flows rapidly from the exhaust slit to the protrusion, the airflow density at both edges of the exhaust slit is high and the flow rate is slow, which easily leads to the formation of residue at the edges of the exhaust slit. When the residue accumulates to a certain level, it is easily dropped onto the product due to thermal stress or exhaust wind force, resulting in a decrease in product yield. Furthermore, the gas remaining at the exhaust slit makes it difficult to quickly reduce the pressure in the process chamber to the target value. Furthermore, the protrusion causes an uneven temperature field in the chamber tube, which also leads to a decrease in product yield. Summary of the Invention

[0005] The purpose of the embodiments of the present application is to provide a semiconductor heat treatment device that can solve the problems of easy formation of residues in semiconductor heat treatment equipment, difficulty in reducing the pressure of the process chamber to the target value in a short time, and uneven temperature field in the tubes inside the chamber.

[0006] In order to solve the above technical problems, this application is implemented as follows:

[0007] An embodiment of the present application provides a semiconductor heat treatment device, which includes:

[0008] a chamber inner tube, the chamber inner tube having an inner circumferential surface;

[0009] an exhaust pipe, the exhaust pipe being in communication with the inner pipe of the chamber;

[0010] An exhaust structure is provided on the inner circumferential surface, an exhaust cavity is formed between the exhaust structure and the inner tube of the chamber, the exhaust cavity is communicated with the exhaust pipe, an exhaust port is provided on the exhaust structure, and the total exhaust area of ​​the exhaust port is greater than the first preset area so that the gas in the inner tube of the chamber flows into the exhaust cavity in a diffused manner.

[0011] In the embodiment of the present application, since the exhaust structure is embedded in the chamber inner tube, the size of the first exhaust portion can be set relatively large, thereby increasing the size of the exhaust cavity formed. When exhausting the gas in the chamber inner tube, since the exhaust structure is provided with exhaust ports, and the total exhaust area of ​​the exhaust ports is greater than the first predetermined area, indicating that the total exhaust area is sufficiently large, the gas in the chamber inner tube can flow into the exhaust cavity in a diffuse manner. Therefore, it is not easy to accumulate at the two edges of the exhaust structure. In other words, the gas density at the two edges is low, thereby avoiding a reduction in gas flow rate, which is beneficial for preventing gas and byproducts from adhering to the edges of the exhaust structure and forming residues, thereby improving product yield. In addition, preventing gas and byproducts from adhering to the edges of the exhaust structure can avoid affecting the pressure in the process chamber, and the pressure in the process chamber can be reduced to the target value in a shorter time. Moreover, since the exhaust structure is embedded in the chamber inner tube, the temperature field in the chamber inner tube is more uniform, which is further beneficial for improving product yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 A schematic structural diagram of a semiconductor heat treatment device disclosed in an embodiment of the present application;

[0013] Figure 2 for Figure 1 sectional view of ;

[0014] Figure 3 A cross-sectional view of a semiconductor thermal processing apparatus disclosed in another embodiment of the present application;

[0015] Figure 2 and Figure 3 The arrows in the figure indicate the direction of gas flow.

[0016] Description of reference numerals:

[0017] 100 - chamber inner tube, 101 - inner circumference;

[0018] 200-exhaust pipe, 201-convex part;

[0019] 300-exhaust structure, 310-first exhaust part, 311-first exhaust port, 320-second exhaust part, 321-second exhaust port, 330-third exhaust part, 331-third exhaust port;

[0020] 400-exhaust chamber;

[0021] 500-outer tube of chamber;

[0022] 600-mounting seat;

[0023] 700-intake pipe;

[0024] 800-Crystal Boat. DETAILED DESCRIPTION

[0025] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0026] The terms "first," "second," and the like in the specification and claims of this application are used to distinguish similar objects, and are not used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of this application can be implemented in an order other than that illustrated or described herein, and that the objects distinguished by "first," "second," and the like are generally of the same type, and do not limit the number of objects; for example, the first object can be one or more. In addition, the term "and / or" in the specification and claims refers to at least one of the connected objects, and the character " / " generally indicates that the objects connected are in an "or" relationship.

[0027] The semiconductor heat treatment equipment provided in the embodiments of the present application is described in detail below through specific embodiments and their application scenarios in conjunction with the accompanying drawings.

[0028] like Figures 1 to 3 As shown, an embodiment of the present application provides a semiconductor heat treatment device, which may be a diffusion furnace. The semiconductor heat treatment device includes a chamber inner tube 100 , an exhaust pipe 200 and an exhaust structure 300 .

[0029] The inner chamber tube 100 may be cylindrical in shape. The inner chamber tube 100 has an inner circumferential surface 101 and a first through hole. The first through hole may penetrate the inner chamber tube 100. The first through hole may be a circular hole, a rectangular hole, or other hole types, which are not limited in this embodiment of the present application.

[0030] The exhaust pipe 200 is in communication with the chamber inner pipe 100, specifically, the exhaust pipe 200 is in communication with the chamber inner pipe 100 through the first through hole, the exhaust pipe 200 is connected with the chamber inner pipe 100, the exhaust pipe 200 is located outside the chamber inner pipe 100, and the exhaust pipe 200 can be in communication with the first through hole to discharge the gas flowing into the first through hole. A convex portion 201 is arranged at the outer edge of the exhaust end of the exhaust pipe 200, which can facilitate the connection of the exhaust pipe 200 with other pipe fittings.

[0031] The exhaust structure 300 is arranged on the inner circumferential surface 101, and the exhaust structure 300 and the chamber inner pipe 100 form an exhaust cavity 400 therebetween. Since the exhaust cavity 400 is arranged inside the chamber inner pipe 100, the volume of the exhaust cavity 400 can be larger, thereby accommodating more gas discharged by the chamber inner pipe 100. The exhaust cavity 400 is in communication with the exhaust pipe 200, specifically, the exhaust cavity 400 can be in communication with the exhaust pipe 200 through the first through hole, so that the gas can flow out of the exhaust pipe 200.

[0032] The exhaust structure 300 is arranged on the inner circumferential surface 101, and the exhaust structure 300 and the chamber inner pipe 100 form an exhaust cavity 400 therebetween. Since the exhaust cavity 400 is arranged inside the chamber inner pipe 100, the volume of the exhaust cavity 400 can be larger, thereby accommodating more gas discharged by the chamber inner pipe 100. The exhaust cavity 400 is in communication with the exhaust pipe 200, specifically, the exhaust cavity 400 can be in communication with the exhaust pipe 200 through the first through hole, so that the gas can flow out of the exhaust pipe 200.

[0033] In the embodiment, the total exhaust area of the exhaust port can be set according to the total intake area of the chamber inner pipe 100, and the total exhaust area of the exhaust port and the total intake area of the chamber inner pipe 100 can satisfy a certain ratio relationship or other relationship, and the total exhaust area of the exhaust port can be set according to the need.

[0034] In the embodiment of the present application, since the exhaust structure 300 is embedded in the chamber inner tube 100, the size of the first exhaust portion 310 can be set to be relatively large, thereby increasing the size of the exhaust cavity 400 formed. When the gas in the chamber inner tube 100 is discharged, since the exhaust port is provided on the exhaust structure 300, and the total exhaust area of ​​the exhaust port is greater than the first preset area, it means that the total exhaust area is large enough. Therefore, the gas in the chamber inner tube 100 can flow into the exhaust cavity 400 in a diffused manner. Therefore, it is not easy to gather at the two edges of the exhaust structure 300. That is to say, the gas density at the two edges is relatively small, thereby avoiding the reduction of the gas flow rate, which is beneficial to prevent the gas and by-products from adhering to the edge of the exhaust structure 300 and avoiding the formation of residues, thereby improving the yield of the product. In addition, preventing gases and by-products from adhering to the edge of the exhaust structure 300 can avoid affecting the pressure in the process chamber, and the pressure in the process chamber can be easily reduced to the target value in a shorter time. Moreover, since the exhaust structure 300 is embedded in the chamber inner tube 100, the temperature field in the chamber inner tube 100 is more uniform, which is more conducive to improving the yield of the product.

[0035] In an optional embodiment, the exhaust structure 300 may include a first exhaust portion 310, the exhaust port includes a first exhaust port 311, the first exhaust portion 310 is provided with a plurality of first exhaust ports, and the first exhaust portion 310 is opposite to the first through hole to shorten the path of gas flow, thereby improving the exhaust efficiency. The first exhaust portion 310 may be an arc-shaped structure, or a structure of other shapes, which is not limited in the embodiment of the present application. Optionally, the first exhaust portion 310 is an arc-shaped structure and is arranged around the crystal boat 800. In this way, when the airflow contacts the first exhaust portion 310, the airflow can flow to both sides of the exhaust structure 300 under the guidance of the arc-shaped structure, which helps the gas in the chamber inner tube 100 to flow into the exhaust cavity 400 in a diffused state, avoids the gas from gathering at the two edges of the exhaust structure 300, and helps to improve the yield of the product. Moreover, the first exhaust portion 310 is recessed toward the side where the exhaust pipe 200 is located, so that the first exhaust portion 310 matches the shape of the chamber inner tube 100 to form a larger exhaust cavity 400. At the same time, the first exhaust portion 310 can match the shape of the crystal boat 800, thereby facilitating the rapid diffusion flow of gas throughout the crystal boat 800, thereby achieving smoother exhaust.

[0036] A wafer boat 800 is disposed within the chamber inner tube 100, and wafers can be placed on the boat 800. Optionally, the boat 800 is located at the center of the chamber inner tube 100. A plurality of first exhaust ports 311 are spaced apart in the first exhaust portion 310 to facilitate diffusion of gas through each of the first exhaust ports 311 into the exhaust chamber 400. Optionally, the first exhaust ports 311 can be rectangular in shape to facilitate smooth passage of gas through the first exhaust ports 311. Furthermore, the dimensions of the first exhaust ports 311 in a direction surrounding the wafer boat 800 can be greater than the dimensions of the first exhaust ports 311 in a direction parallel to the axis of the chamber inner tube 100. Of course, the first exhaust ports 311 can also be circular or have other shapes, which are not limited in this embodiment of the present application.

[0037] A plurality of first exhaust ports 311 can be spaced apart in a direction parallel to the axis of the chamber inner tube 100. Since the gas can enter the space above the wafer, most of the gas can be discharged through the gap between adjacent wafers. The first exhaust ports 311 can correspond to the gap formed between adjacent wafers, thereby facilitating rapid gas discharge.

[0038] Optionally, the exhaust area of ​​the first exhaust ports 311 can be larger than the second preset area, so that the total exhaust flow rate of each first exhaust port 311 is larger, and the total exhaust area of ​​the exhaust ports is greater than the first preset value. The spacing between adjacent edges of adjacent first exhaust ports 311 is smaller than the first preset spacing, that is, the spacing between adjacent first exhaust ports 311 is smaller, and the spacing between first exhaust ports 311 adjacent to the edge of the first exhaust section 310 and the edge is smaller than the second preset spacing, that is, the spacing between first exhaust ports 311 near the edge and the edge of the first exhaust section 310 is also smaller. This allows each first exhaust port 311 to be laid out entirely on the first exhaust section 310, and the total exhaust area of ​​the exhaust ports to be greater than the first preset value. It should be noted that the second preset area, the first preset spacing, and the second preset spacing do not have to be fixed values ​​and can be set as needed.

[0039] In one embodiment, the axial centerline of the cylinder where the first exhaust portion 310 is located is not collinear with the axial centerline of the cylinder where the chamber inner tube 100 is located. In another embodiment, the axial centerline of the cylinder where the first exhaust portion 310 is located is collinear with the axial centerline of the cylinder where the chamber inner tube 100 is located to prevent gas disturbance and increase the size of the exhaust chamber 400, thereby facilitating stable gas flow within the exhaust chamber 400.

[0040] When the gas to be exhausted flows to both sides of the exhaust structure 300, if there are no exhaust channels on either side, the gas will easily remain on these sides, making it difficult to quickly reduce the pressure in the chamber inner tube 100 to the target value. The "two sides" here refer to the two edge portions of the exhaust structure 300 in the direction surrounding the wafer boat 800. Therefore, to address this issue, the exhaust structure 300 may further include a second exhaust section 320 and a third exhaust section 330. The first exhaust section 310 is connected to the chamber inner tube 100 via the second exhaust section 320 and the third exhaust section 330, respectively. The second exhaust section 320 has a second exhaust port 321, and the third exhaust section 330 has a third exhaust port 331. The second exhaust port 321 on the second exhaust section 320 and the third exhaust port 331 on the third exhaust section 330 allow the gas remaining in the chamber inner tube 100 to be exhausted, thereby quickly reducing the pressure in the chamber inner tube 100 to the target value. Furthermore, the addition of the second exhaust portion 320 and the third exhaust portion 330 can form a larger exhaust cavity, making exhaust more convenient. The second exhaust port 321 and the third exhaust port 331 can be rectangular in shape, thereby facilitating smooth passage of gas through the second exhaust port 321 and the third exhaust port 331. Of course, the second exhaust port 321 and the third exhaust port 331 can also be circular or in other shapes, which are not limited in this embodiment of the present application.

[0041] In one embodiment, the central angle corresponding to the first exhaust portion 310 is less than 120° or greater than 180°. In another embodiment, the central angle corresponding to the first exhaust portion 310 is between 120° and 180°. Alternatively, the central angle corresponding to the first exhaust portion 310 can be 120°, 150°, 180°, etc. The appropriate central angle in this embodiment facilitates rapid gas discharge and the deposition of thin films such as insulating layers and dielectric layers.

[0042] Optionally, at least one of the second exhaust portion 320 and the third exhaust portion 330 has an arc-shaped structure. In another optional embodiment, at least one of the second exhaust portion 320 and the third exhaust portion 330 has a flat plate structure, with the plane of the flat plate extending radially along the inner tube 100 of the chamber. In this embodiment, the flat-plate shape of the second exhaust portion 320 and / or the third exhaust portion 330 has a minimal impact on the direction of gas flow, thereby facilitating gas discharge from the second exhaust portion 320 and the third exhaust portion 330, thereby shortening the time it takes for gas to be discharged from the second exhaust portion 320 and the third exhaust portion 330.

[0043] In another embodiment, Figure 3As shown, at least one of the second exhaust portion 320 and the third exhaust portion 330 is a flat plate structure. The plane on which the flat plate structure is located is tilted relative to the radial direction of the chamber inner tube 100. The angle between the normal line at the intersection of the chamber inner tube 100 and the flat plate structure and the flat plate structure is acute, indicating that the flat plate structure is tilted relative to the normal line at the intersection. Furthermore, the flat plate structure is oriented toward the wafer boat 800. Specifically, the side of the flat plate structure connected to the chamber inner tube 100 is farther away from the exhaust pipe 200 than the side of the flat plate structure connected to the first exhaust portion 310. It should be noted that the normal line at the intersection of the chamber inner tube 100 and the flat plate structure is perpendicular to the tangent line at the intersection of the chamber inner tube 100 and the flat plate structure, and the normal line at the intersection passes through the center of the chamber inner tube 100. In this embodiment, since the second exhaust portion 320 and the third exhaust portion 330 are arranged at an angle, when the gas flows toward the second exhaust portion 320 and the third exhaust portion 330, even if the gas is blocked by an area where no exhaust port is opened, it can flow to the position of the exhaust port and then be discharged, and is not easy to gather in a dead corner, thereby avoiding the accumulation of residues on the two edges of the exhaust structure 300 and improving the product yield.

[0044] The second exhaust port 321 needs to penetrate the second exhaust section 320, and the third exhaust port 331 needs to penetrate the third exhaust section 330. The direction of the second exhaust port 321 penetrating the second exhaust section 320 may form an angle, and the direction of the third exhaust port 331 penetrating the third exhaust section 330 may form an angle. In another embodiment, the second exhaust section 320 is a flat plate structure, and the second exhaust port 321 penetrates the second exhaust section 320 perpendicularly to the second exhaust section 320; and / or the third exhaust section 330 is a flat plate structure, and the third exhaust port 331 penetrates the third exhaust section 330 perpendicularly to the third exhaust section 330. In this embodiment, gas flowing through the second and third exhaust ports 321 and 331 is less likely to collide with the chamber inner tube 100 or the first exhaust section 310, thereby improving exhaust flow and allowing the pressure in the chamber inner tube 100 to be reduced to the target value in a shorter period of time.

[0045] In an optional embodiment, to quickly exhaust residual gas from both sides of the exhaust structure 300 out of the chamber inner tube 100, a plurality of second exhaust ports 321 are spaced apart parallel to the axis of the chamber inner tube 100, each second exhaust port 321 extending perpendicularly through the second exhaust portion 320. Furthermore, a plurality of third exhaust ports 331 are spaced apart parallel to the axis of the chamber inner tube 100, each extending perpendicularly through the third exhaust portion 330. The greater number of second exhaust ports 321 and / or third exhaust ports 331 allows more gas to be exhausted from these ports, thereby more quickly exhausting the residual gas. Furthermore, the greater number of second exhaust ports 321 and / or third exhaust ports 331 allows each second exhaust port 321 and / or third exhaust port 331 to correspond to a gap between adjacent wafers, resulting in smoother exhaust.

[0046] The first exhaust port 311 needs to penetrate the first exhaust portion 310. An angle may exist between the penetration direction of the first exhaust port 311 and the radial direction of the chamber inner tube 100. In other embodiments, the first exhaust port 311 penetrates the first exhaust portion 310 along the radial direction of the chamber inner tube 100. In this embodiment, the extension direction of the first exhaust port 311 is substantially the same as the direction of the gas before entering the first exhaust port 311. The gas flow direction does not change when passing through the first exhaust port 311, thereby improving fluidity. Furthermore, the pressure in the chamber inner tube 100 can be reduced to the target value in a short period of time.

[0047] When there are multiple first exhaust ports 311, the multiple first exhaust ports 311 can be irregularly distributed. In another embodiment, the multiple first exhaust ports 311 are distributed in an array, or further, in a determinant distribution. In this case, along the axial direction of the chamber inner tube 100, each layer has a large number of first exhaust ports 311, and the gas distribution is relatively uniform, which facilitates the rapid discharge of gas flowing to each layer of wafers from the chamber inner tube 100.

[0048] The exhaust structure 300 has two axial ends along the chamber inner tube 100, each defined as a first end and a second end. The first end is spaced a first predetermined distance from one end of the chamber inner tube 100, and the second end is spaced a second predetermined distance from the other end of the chamber inner tube 100. In another alternative embodiment, the first end of the exhaust structure 300 extends to one end of the chamber inner tube 100, and the second end of the exhaust structure 300 extends to the other end of the chamber inner tube 100. In this embodiment, the exhaust structure 300 extends from one end of the chamber inner tube 100 to the other end of the chamber inner tube 100, preventing gas from accumulating at both ends of the chamber inner tube 100 and facilitating smooth gas discharge from the exhaust structure 300.

[0049] In an alternative embodiment, the chamber inner tube 100 is sealed at both axial ends by a plate. In another alternative embodiment, the semiconductor thermal processing apparatus can further comprise a chamber outer tube 500, which is sleeved outside the chamber inner tube 100. The chamber outer tube 500 is provided with a second through hole, and one end of the exhaust pipe 200 passes through the second through hole and is connected to the chamber inner tube 100. The chamber outer tube 500 can reduce the contact area between the chamber inner tube 100 and the external environment, which is conducive to improving the uniformity of the temperature field in the chamber inner tube 100.

[0050] In an alternative embodiment, in order to avoid the gas discharged into the exhaust chamber 400 from being discharged to other places along the axial ends of the chamber inner tube 100, the semiconductor thermal processing apparatus can further comprise a top cover and a bottom plate, the exhaust structure 300 has a first end and a second end along the axial direction of the chamber inner tube 100, the top cover is arranged at the first end, and the bottom plate is arranged at the second end. The top cover and the bottom plate are opposite to each other, and the exhaust structure 300 is connected to the top cover and the bottom plate respectively, so as to form a relatively closed exhaust chamber 400. The top cover and the bottom plate can prevent the gas discharged into the exhaust chamber 400 from being discharged to other places along the axial ends of the chamber inner tube 100. Alternatively, the top cover and the bottom plate can be flat plate structures. When the exhaust structure 300 comprises the first exhaust part 310, the second exhaust part 320 and the third exhaust part 330, the first exhaust part 310, the second exhaust part 320, the third exhaust part 330, the top cover and the bottom plate can be integrally formed, and then are welded to the chamber inner tube 100, so as to improve the sealing performance of the exhaust chamber 400.

[0051] The semiconductor thermal processing apparatus can further comprise a mounting seat 600 and an air inlet pipe 700, and the inner circumferential surface 101 of the chamber inner tube 100 is further provided with a third through hole, and the mounting seat 600 is embedded in the third through hole. The air inlet pipe 700 is arranged in a groove on the mounting seat 600, and the air inlet pipe 700 is opposite to the first exhaust part 310. The outer circumferential surface of the air inlet pipe 700 is provided with a plurality of air outlet openings, and the plurality of air outlet openings are directed towards the first exhaust part 310. The axis of the air inlet pipe 700 can be parallel to the axis of the chamber inner tube 100.

[0052] The embodiments of the present application are described above in combination with the drawings, but the present application is not limited to the specific embodiments described above, which are only illustrative but not restrictive. Those skilled in the art can make many forms under the inspiration of the present application without departing from the scope of the present application and the protection scope of the claims.

Claims

1. A semiconductor heat treatment device, characterized in that: include: a chamber inner tube (100), wherein the chamber inner tube (100) has an inner peripheral surface (101); an exhaust pipe (200), the exhaust pipe (200) being in communication with the chamber inner pipe (100); an exhaust structure (300), the exhaust structure (300) being arranged on the inner circumferential surface (101), an exhaust cavity (400) being formed between the exhaust structure (300) and the chamber inner tube (100), the exhaust cavity (400) being in communication with the exhaust tube (200), an exhaust port being provided on the exhaust structure (300), the total exhaust area of ​​the exhaust port being greater than a first preset area, so that the gas in the chamber inner tube (100) flows into the exhaust cavity (400) in a diffused manner; A crystal boat (800) is provided in the chamber inner tube (100), the exhaust structure (300) comprises a first exhaust portion (310), the first exhaust portion (310) is an arc-shaped structure and is arranged around the crystal boat (800), and the first exhaust portion (310) is provided with a plurality of first exhaust ports (311) at intervals; The exhaust structure (300) further comprises a second exhaust portion (320), the first exhaust portion (310) is connected to the chamber inner tube (100) via the second exhaust portion (320), and the second exhaust portion (320) is provided with a second exhaust port (321).

2. The semiconductor heat treatment equipment according to claim 1, characterized in that The axial centerline of the cylinder where the first exhaust portion (310) is located is collinear with the axial centerline of the cylinder where the chamber inner tube (100) is located.

3. The semiconductor heat treatment equipment according to claim 2, characterized in that The exhaust structure (300) further comprises a third exhaust portion (330), wherein the first exhaust portion (310) is connected to the chamber inner tube (100) via the second exhaust portion (320) and the third exhaust portion (330), respectively, and the third exhaust portion (330) is provided with a third exhaust port (331).

4. The semiconductor heat treatment equipment according to claim 3, characterized in that At least one of the second exhaust portion (320) and the third exhaust portion (330) is a flat plate structure, and a plane where the flat plate structure is located extends along the radial direction of the chamber inner tube (100); or, At least one of the second exhaust portion (320) and the third exhaust portion (330) is a flat plate structure, the plane where the flat plate structure is located is inclined relative to the radial direction of the chamber inner tube (100), and the angle between the normal line at the intersection of the chamber inner tube (100) and the flat plate structure and the flat plate structure is an acute angle.

5. The semiconductor heat treatment equipment according to claim 4, characterized in that The second exhaust portion (320) is a flat plate structure, and a plurality of second exhaust ports (321) are arranged at intervals in a direction parallel to the axis of the chamber inner tube (100), and each second exhaust port (321) penetrates the second exhaust portion (320) in a direction perpendicular to the second exhaust portion (320); and / or, The third exhaust portion (330) is a flat plate structure, and a plurality of third exhaust ports (331) are arranged at intervals in a direction parallel to the axis of the chamber inner tube (100), and each of the third exhaust ports (331) penetrates the third exhaust portion (330) in a direction perpendicular to the third exhaust portion (330).

6. The semiconductor heat treatment equipment according to claim 1, wherein The plurality of first exhaust ports (311) are distributed in an array, and the first exhaust ports (311) penetrate the first exhaust portion (310) along the radial direction of the chamber inner tube (100).

7. The semiconductor heat treatment equipment according to claim 1, wherein The central angle corresponding to the first exhaust portion (310) is 120° to 180°.

8. The semiconductor heat treatment equipment according to claim 1, wherein The exhaust structure (300) has two axial ends along the chamber inner tube (100) respectively comprising a first end and a second end, wherein the first end extends to one end of the chamber inner tube (100) and the second end extends to the other end of the chamber inner tube (100).

9. The semiconductor heat treatment equipment according to claim 1, wherein The semiconductor heat treatment equipment further comprises a chamber outer tube (500), wherein the chamber outer tube (500) is sleeved outside the chamber inner tube (100); One end of the exhaust pipe (200) passes through a side wall of the chamber outer pipe (500) and is connected to the chamber inner pipe (100).

10. The semiconductor heat treatment equipment according to claim 1, wherein The semiconductor heat treatment equipment further comprises a top cover and a bottom plate, the exhaust structure (300) has two axial ends along the chamber inner tube (100) at a first end and a second end respectively, the top cover is arranged at the first end, the bottom plate is arranged at the second end, and the top cover is opposite to the bottom plate.

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