Precursor packaging container for semiconductor epitaxial growth and semiconductor epitaxial growth method

Abstract

The application discloses a precursor packaging container for semiconductor epitaxial growth and a semiconductor epitaxial growth method. The precursor packaging container comprises a first accommodating body which forms a first accommodating chamber, a second accommodating body in the first accommodating body which forms a second accommodating chamber, a gas inlet channel which is communicated with the second accommodating chamber, a gas outlet channel which is communicated with the first accommodating chamber, and a connecting channel which is communicated with the first accommodating chamber and the second accommodating chamber and is long and narrow. The first precursor in the first accommodating chamber can compensate for the decrease of the vapor pressure caused by the continuous consumption of the solid source in the second precursor by using the long and narrow connecting channel to communicate the first and second accommodating chambers. The vapor pressure difference in the first and second accommodating chambers caused by external factors can be quickly adjusted by the long and narrow connecting channel, the stable precursor output is provided, the process stability is improved, the replacement period of the solid source is reduced, and the growth rate of gallium is improved.

Description

Technical Field

[0001] This invention relates to the field of vapor deposition technology, and more particularly to a precursor packaging container for semiconductor epitaxial growth and a semiconductor epitaxial growth method. Background Technology

[0002] Organometallic compounds (precursors) are crucial raw materials for the epitaxial growth of optoelectronic materials using techniques such as metal-organic chemical vapor deposition (MOCVD). The quality and transport stability of precursor materials have a significant impact on the quality of epitaxial growth, especially when using solid-state precursors. As epitaxial growth progresses, the surface area of ​​the solid-state source decreases, and channeling intensifies, causing instability in the saturated vapor pressure of the solid-state source. Furthermore, the carrier gas transports the solid-state source to areas in the delivery system that are difficult for the carrier gas flow to approach, resulting in poor stability of the solid-state source flowing into the reaction chamber, which is particularly difficult to control towards the end of its use. This leads to uneven composition in the epitaxial layer, affecting the stability of the epitaxial growth process, reducing the quality of epitaxial growth, shortening the precursor replacement cycle, wasting precursors, and reducing the gallium growth efficiency of the equipment.

[0003] To compensate for the shortcomings of pure solid precursors, some existing studies have developed solution precursors. For example, the widely used TMIn and Cp2Mg sources are solid at room temperature. Chinese invention patent CN02138168.2 describes the preparation of a room temperature solid Mg source solution by liquefying a solid Mg source with a Schiff base. Chinese invention patent TW201734253A describes the preparation of a solid In source solution by dissolving solid In into a hydrocarbon solvent with a suitable number of C atoms. Literature such as Journal of Crystal Growth 124 (1992) and Journal of Electronic Materials 30 (2001) reported the application of TMIn and Cp2Mg solutions in MOCVD epitaxial growth of III-V semiconductor materials. Given the more stable extraction efficiency of solid source solutions, some domestic customers have already used TMIn and Cp2Mg solutions for the epitaxial growth of semiconductors.

[0004] Although solid source solutions have more stable vapor pressure and extraction efficiency, the steady state of a solid source solution is an equilibrium between a solid source and a saturated source solution, such as... Figure 1 As shown, as the carrier gas continuously carries source vapor, the solid source is continuously consumed. With long-term use, the vapor pressure decreases, and the solution source becomes more unstable towards the end of its use.

[0005] Therefore, improving the transport stability of solid-state and / or solution-based sources has become a pressing technical challenge. Summary of the Invention

[0006] To address the shortcomings of existing technologies, the present invention aims to provide a precursor packaging container for semiconductor epitaxial growth and a semiconductor epitaxial growth method.

[0007] To achieve the aforementioned objectives, the technical solution adopted by this invention includes:

[0008] In a first aspect, the present invention provides a semiconductor epitaxial growth precursor packaging container, comprising:

[0009] A first accommodating body is used to accommodate a first precursor, and the first accommodating body surrounds to form a first accommodating chamber;

[0010] The second accommodating body is used to accommodate the second precursor. The second accommodating body is disposed inside the first accommodating cavity, and the second accommodating body surrounds to form the second accommodating cavity.

[0011] An air intake passage, which is connected to the second accommodating chamber;

[0012] An air outlet channel is connected to the first accommodating chamber, and both the air inlet channel and the air outlet channel are equipped with air passage connectors.

[0013] In addition, a connecting channel that connects the first accommodating chamber and the second accommodating chamber, and the connecting channel is elongated.

[0014] The term "elongated" refers to a shape in which the length of the connecting channel is significantly greater than its width, such as some interlayers, tubular channels or narrow slits and combinations thereof, such as tubular objects with a length-to-diameter ratio greater than 10, or interlayers with a length-to-thickness ratio greater than 5, etc.

[0015] Furthermore, the first precursor includes a solid precursor, and the second precursor includes a solution of the solid precursor.

[0016] Furthermore, the second accommodating body includes a nested outer cavity wall and an inner cavity wall, the second accommodating chamber is located inside the inner cavity wall, and the buffer gap layer between the inner cavity wall and the outer cavity wall constitutes part of the connecting channel; a perforated plate is provided at one end of the second accommodating space away from the air intake channel, and the mesh in the perforated plate connects the second accommodating chamber and the buffer gap layer.

[0017] Furthermore, the connecting channel also includes an air guide tube, which is disposed on the second accommodating body and penetrates the outer cavity wall. The air guide tube connects the buffer gap layer and the first accommodating chamber. The air guide tube extends from the outer cavity wall to the side of the first accommodating chamber away from the air inlet channel.

[0018] Furthermore, the end of the air guide tube away from the air intake channel is bent at a predetermined angle toward the center of the first accommodating chamber.

[0019] Furthermore, the mesh openings in the perforated plate are evenly spaced, and the diameter of the mesh openings is 5-200μm; or, the width of the buffer gap layer is 1000-5000μm, or it can be a combination of the above two parameters.

[0020] Furthermore, the air intake channel includes an air intake pipe extending into the second accommodating chamber, and a spray structure connected to and communicating with the end of the air intake pipe.

[0021] Furthermore, the spray structure is provided with a transverse gas passage, a diffusion hole communicating with the transverse gas passage, a buffer unit communicating with the diffusion hole, and a diffusion structure connected to the buffer unit in sequence along the air intake direction of the air intake pipe. The diffusion structure is a multi-hole structure.

[0022] Furthermore, the buffer unit is provided with a horizontal guide passage, which connects the diffuser hole and the buffer unit. The carrier gas flowing through the horizontal guide passage enters the buffer unit in the radial direction of the spray structure.

[0023] Furthermore, the airflow guiding passage is disposed in the circumference of the buffer unit.

[0024] Furthermore, the first accommodating chamber is connected to an openable and closable first feeding port for adding the first precursor, and the second accommodating chamber is connected to an openable and closable second feeding port for adding the second precursor.

[0025] Furthermore, control valves are installed on both the air intake channel and the air outlet channel.

[0026] In a second aspect, the present invention also provides a method for semiconductor epitaxial growth using the above-described precursor packaging container, comprising:

[0027] A solution of the solid precursor is filled into the first accommodating chamber of the precursor encapsulation container, and the solid precursor is filled into the second accommodating chamber;

[0028] The carrier gas is sequentially passed through the inlet channel, the second accommodating chamber, the connecting channel, the first accommodating chamber, and the outlet channel, so that the carrier gas carries the gaseous precursor.

[0029] The carrier gas carrying the gaseous precursor is introduced into the deposition equipment of the vapor phase epitaxial deposition system for epitaxial growth.

[0030] Thirdly, the present invention also provides a semiconductor epitaxial growth system, comprising a front device, the aforementioned precursor packaging container, and a rear device arranged sequentially along the carrier gas advance direction; the front device is at least used to provide the carrier gas; and the rear device is at least used to perform epitaxial growth based on the gaseous precursor carried by the carrier gas after passing through the precursor packaging container.

[0031] Based on the above technical solution, compared with the prior art, the beneficial effects of the present invention include at least the following:

[0032] This invention utilizes a narrow connecting channel to connect the first and second accommodating chambers. On one hand, the first precursor in the first accommodating chamber can compensate for the vapor pressure drop caused by the continuous consumption of the solid source in the second precursor, making it more stable as a solution source for the second precursor at the end of its use. On the other hand, the narrow connecting channel quickly adjusts the vapor pressure difference inside the first and second accommodating chambers caused by changes in external factors, providing a continuous and stable precursor output, improving process stability, reducing the replacement cycle of the solid source, and improving the gallium growth efficiency of the machine.

[0033] The above description is merely an overview of the technical solution of the present invention. In order to enable those skilled in the art to better understand the technical means of this application and to implement it in accordance with the contents of the specification, the preferred embodiments of the present invention are described below in conjunction with detailed drawings. Attached Figure Description

[0034] Figure 1 This is a schematic diagram of the solution source vaporization process and its equilibrium state in the background technology of this invention;

[0035] Figure 2 This is a schematic diagram of the precursor packaging container provided in the first typical embodiment of the present invention;

[0036] Figure 3 This is a schematic diagram of the precursor packaging container provided in the second typical embodiment of the present invention;

[0037] Figure 4 This is a schematic diagram of the spray structure in the precursor packaging container provided in the second typical embodiment of the present invention;

[0038] Figure 5 This is a schematic diagram of the spray structure in the precursor packaging container provided in the third typical embodiment of the present invention;

[0039] Figure 6 This is a schematic diagram of the spray structure in the precursor packaging container provided in the fourth typical embodiment of the present invention;

[0040] Figure 7 This is a schematic diagram of the semiconductor epitaxial growth system structure provided in the fifth typical embodiment of the present invention;

[0041] Figure 8 This is a statistical distribution diagram of TMIn flow rate in the early, middle and late stages of epitaxial growth provided by the first typical embodiment of the present invention for the precursor encapsulation container and the conventional solution source encapsulation container.

[0042] Figure 9 This is a statistical distribution diagram of Cp2Mg flow rate in the precursor encapsulation container and the conventional solution source encapsulation container during the early, middle and late stages of epitaxial growth, provided in the first typical embodiment of the present invention.

[0043] Explanation of reference numerals in the attached figures:

[0044] 10. First container; 11. First feed port;

[0045] 20. Second receiving body; 21. Outer cavity wall; 22. Inner cavity wall; 23. Mesh plate; 24. Second feeding port;

[0046] 30. Intake channel; 31. Intake control valve; 32. Intake connector; 33. Spray structure; 34. Lateral gas passage; 35. Diffuser hole; 36. Buffer unit; 37. Diffuser structure; 38. Horizontal guide passage;

[0047] 40. Air outlet channel; 41. Air outlet control valve; 42. Air outlet connector;

[0048] 51. Buffer gap layer; 52. Air duct;

[0049] 61. Carrier gas supply equipment; 62. First flow meter; 63. Second flow meter; 64. Deposition equipment. Detailed Implementation

[0050] In view of the shortcomings of the prior art, the inventors of this invention, through long-term research and extensive practice, have proposed the technical solution of this invention. The following will further explain and illustrate this technical solution, its implementation process, and its principles.

[0051] Many specific details are set forth in the following description in order to provide a full understanding of the invention. However, the invention may also be practiced in other ways different from those described herein, and therefore the scope of protection of the invention is not limited to the specific embodiments disclosed below.

[0052] Moreover, relational terms such as “first” and “second” are used merely to distinguish one component or method step from another that has the same name, and do not necessarily require or imply any such actual relationship or order between these components or method steps.

[0053] The technical solution of the present invention will be further described in detail below through several embodiments and in conjunction with the accompanying drawings. However, the selected embodiments are only for illustrating the present invention and do not limit the scope of the present invention.

[0054] Example 1

[0055] like Figure 2 As shown, this embodiment provides a solid-liquid hybrid precursor encapsulation container:

[0056] It includes a first accommodating body 10 and a second accommodating body 20 composed of an outer cavity wall 21 and an inner cavity wall 22. A perforated plate 23 is provided at the bottom of the inner cavity wall 22. A vapor pressure buffer gap layer 51 is provided between the outer cavity wall 21 and the inner cavity wall 22. This buffer gap layer 51 communicates with the first accommodating chamber surrounded by the first accommodating body 10 through a gas guide pipe 52 penetrating the outer cavity wall 21. Both sides of the perforated plate 23 are respectively connected to the second accommodating chamber surrounded by the inner cavity wall 22 and the aforementioned buffer gap layer 51. As an air inlet pipe for the second accommodating chamber, an air inlet pipe is provided at the top of the second accommodating body 20, and an air outlet pipe is provided at the top of the first accommodating body 10 as an air outlet channel 40. An air inlet control valve 31 and an air outlet control valve 41, an air inlet connector 32, and an air outlet connector 42 are respectively provided on the air inlet pipe and the air outlet pipe. The tops of the first accommodating body 10 and the second accommodating body 20 are respectively provided with an openable and closable first feeding port 11 and a second feeding port 24 that communicate with them. The end of the air guide tube 52 away from the air inlet channel 30 is bent at about 45° toward the center of the first accommodating chamber. This bend can extend the path of the carrier gas flowing out through the air guide tube 52 and through the precursor in the first accommodating body 10.

[0057] Based on the above structure, a precursor solution can be added to the first container 10, and a solid precursor can be added to the second container 20. The temperature of the encapsulation container is adjusted to a set temperature and maintained stably, so that the vapor pressure of the precursor in the first container 10 and the second container 20 is stable. In the early stage of epitaxial growth, the carrier gas first flows through the second container 20 and mixes with the gaseous substances volatilized from the solid precursor. When the vapor pressure in the first container 10, the buffer gap layer 51, and the second container 20 remains stable, the carrier gas does not carry precursor vapor into the second container 20 after passing through the first container 10 and the buffer gap layer 50. As epitaxial growth proceeds, the concentration of solute in the solution precursor tends to decrease. After passing through the first container 10 and the buffer gap layer 50, the carrier gas carries precursor vapor into the second container 20 and compensates for the precursor in the second container 20.

[0058] Meanwhile, in actual production, the demand for capacity and integration of vapor phase epitaxial deposition equipment is increasing, so the space of each component of the epitaxial growth equipment is getting smaller and smaller. The size of the packaging container is limited by the specific dense space of the epitaxial deposition equipment. The nested structure of the first and second accommodating bodies provided in this embodiment of the invention allows the packaging container to be free from the limitation of the lateral dense space of the vapor phase epitaxial deposition equipment, which facilitates the replacement of the packaging container, abnormal maintenance and other operations, and reduces the risk of misoperation.

[0059] refer to Figure 1 The solid precursor solution at a specific temperature is in a state of equilibrium between the precursor saturated gas, the precursor saturated solution, and the solid precursor. As the concentration of solute in the solution precursor tends to decrease, the undissolved solid precursor dissolves into the solvent, thus maintaining a stable vapor pressure.

[0060] When changes in external factors cause a vapor pressure difference inside the first and second accommodating chambers, such as the difference between the carrier gas temperature and the packaging container temperature settings during conventional epitaxial growth (i.e., the carrier gas temperature is higher or lower than the packaging container temperature), vapor pressure fluctuations will inevitably occur when the carrier gas enters the packaging container. At this time, the narrow connecting channel formed by the buffer gap layer 5l and the gas guide pipe 52 can automatically buffer the vapor pressure inside the packaging container, so that the carrier gas can be stably output and compensated through the packaging container precursor.

[0061] In practical applications, the diameter of the equally spaced through holes in the perforated plate 23 can be set to 5-200 μm, with 10-80 μm being the preferred choice. If the through hole diameter is too large, the retention effect of the carrier gas passing through the mesh will be weakened. As the precursor is consumed, especially when the total amount of the precursor is less than 1 / 4, the vapor pressure will fluctuate. The thickness of the vapor pressure buffer gap layer 51 can be set to 1000-5000 μm, with the optimal range being 2000-3000 μm. If the thickness is too large, it wastes space; if the thickness is too small, the buffering effect is not obvious.

[0062] When using the precursor packaging container provided in this embodiment, before connecting it to the terminal of the vapor phase epitaxial deposition application equipment, a solution source and a solid source are added from the first feed port 11 and the second feed port 24, respectively. For example, it can be a trimethylindium (TMIn) source solution and a trimethylindium (TMIn) solid source or a magnesia pyrocene (Cp2Mg) source solution or a solid magnesia pyrocene (Cp2Mg) source.

[0063] When connected to the terminal of the vapor phase epitaxial deposition application equipment, high-purity carrier gas H2 or N2 enters the interior of the second container 20 through the inlet pipe, carrying solid trimethylindium (TMIn) or magnesia pyrocene (Cp2Mg) vapor from the mesh plate 23 into the vapor pressure buffer gap layer 51, and then enters the trimethylindium (TMIn) source solution or magnesia pyrocene (Cp2Mg) source solution inside the first container 10 through the gas guide pipe 52, and then enters the epitaxial growth equipment pipeline through the outlet pipe.

[0064] A vapor pressure buffer gap layer 51 is provided between the outer cavity wall 21 and the inner cavity wall 22 of the solid precursor cylinder. It is connected to the inside of the first container 10 through a gas guide pipe 52, serving as the gas inlet pipe for the solution source inside the outer cavity of the solution source cylinder. On the one hand, it compensates for the problem that the vapor pressure inside the outer cavity of the solution source cylinder decreases with long-term use as the solid source dissolved in the solution source is continuously consumed, and the solution source becomes more unstable at the end of its use. On the other hand, the vapor pressure buffer layer quickly adjusts the vapor pressure difference between the second container 20 carrying the solution precursor and the first container carrying the solid precursor caused by changes in external factors, providing a continuous and stable precursor output, improving process stability, reducing the solid source replacement cycle, and improving the gallium growth efficiency of the machine.

[0065] See Figure 8 and Figure 9 The flow rate statistics of the precursor encapsulation container and the conventional solution source encapsulation container provided in Embodiment 1 of the present invention during the early, middle and late stages of epitaxial growth show that when the encapsulation container temperature is set at 25°C, the flow rate of the encapsulation container of Embodiment 1 of the present invention changes by 6% over the entire cycle, while the change in the conventional encapsulation container is 20%. In some other epitaxial growth application scenarios, the flow rate of the encapsulation container provided in Embodiment 1 of the present invention changes by 2% over the entire cycle, while the change in the conventional encapsulation container is 7%.

[0066] Furthermore, the precursor packaging container provided in this embodiment can also be used as a pure solid precursor container. For example, a solid precursor is added to both the first and second accommodating chambers. In this case, the air inlet channel is used for air outlet and the air outlet channel is used for air inlet. The flow paths of the carrier gas are reversed, thereby realizing the application of the solid precursor. However, the use of this pure solid precursor is not the main technical concept of this invention.

[0067] Example 2

[0068] like Figure 3 as well as Figure 4 As shown, this embodiment also provides a solid-liquid hybrid precursor encapsulation container, which is further improved based on Embodiment 1. The specific improvements are as follows:

[0069] A spray structure 33 is added to the end of the air intake pipe and connected to it. The air intake pipe and the spray structure 33 constitute the air intake channel 30. The spray structure includes a transverse gas passage 34, a diffuser hole 35 connected to the transverse gas passage 34, a buffer unit 36 ​​connected to the diffuser hole 35, and a diffuser structure 37 connected to the buffer unit 36, arranged sequentially along the air intake direction of the air intake pipe. The diffuser structure is a multi-hole structure.

[0070] The air intake direction refers to the initial direction of the carrier gas blown out of the air outlet pipe. The function of the transverse gas passage 34 is to distribute the carrier gas laterally and evenly in a radial direction with the initial direction as the axis. The direction of the diffuser hole 35 should be parallel, substantially parallel, or nearly parallel to the aforementioned air intake direction. The circumferential direction in this invention also refers to a complete circumference with the aforementioned air intake direction as the axis.

[0071] like Figure 3 As shown in the figure, this embodiment does not have a feeding port, but can instead use the fixed surfaces of the air inlet channel 30 and the air outlet channel 40, i.e. Figure 3 The topmost first accommodating body 10 has a detachable cover to facilitate feeding, maintenance, and cleaning.

[0072] By setting up the spray structure 33, the direction of the air intake in the air intake pipe is changed, which improves the uniformity of the air intake distribution of the carrier gas. The carrier gas escaping from the through holes of the spray structure 33 increases its contact area with the solid source, which improves the phenomena such as "channeling" and "caking" that are very easy to occur in the solid source. At the same time, it can also stabilize the source concentration inside the bottle that is consumed with the use of the solid source, that is, improve the vapor pressure stability, thereby further improving the stability of the vapor deposition process, extending the service life of the solid source, and improving the equipment gallium dynamism.

[0073] Meanwhile, the spray structure 33 is preferably located within the second container 20 near the air inlet channel 30, that is, it can be located at the top of the second container 20 in Figure 3, or at a short distance in a suspended position. The part of the air guide pipe 52 connected to the second container 20 can also be located on the outer cavity wall 21 near the upper half of the air inlet channel 30. This arrangement allows the carrier gas to first move downward through the second container chamber with a certain height, then move upward through the narrow buffer gap layer 51, and then move downward through the air guide pipe 52. This forms two connected U-shaped gas flow directions. After multiple reversals, the contact time between the carrier gas and the volatilized gaseous precursor is increased within a limited space. At the same time, the multiple reversals enhance the turbulence effect on the carrier gas, thereby improving the stability and uniformity of the precursor carried out by the carrier gas in the second container 20. Combined with the above-mentioned bubbling compensation in the precursor solution, the stability of the precursor supply is further improved based on the above implementation method.

[0074] Example 3

[0075] like Figure 5 As shown, this embodiment is a further improvement on embodiment 2, specifically as follows:

[0076] A horizontal guide passage 38 is provided in the buffer unit, which connects the diffuser hole 35 and the buffer unit 36. The carrier gas flowing through the horizontal guide passage enters the buffer unit 36 ​​in the radial direction of the spray structure. However, the horizontal guide passage 38 is only provided in the outermost ring of the spray structure 33.

[0077] The advantage of the above configuration is that the horizontal guide passage allows the carrier gas moving vertically in the circumferential direction to collide and mix with the carrier gas moving horizontally in the radial direction within the buffer unit 36, further improving the uniformity of the carrier gas intake.

[0078] Example 4

[0079] like Figure 6 As shown, this embodiment is a further improvement on embodiment 3, specifically as follows:

[0080] Compared to Embodiment 3, where the horizontal guide path 38 is only set around the outermost ring of the spray structure 33, in this embodiment, each diffuser hole 35 is not directly connected to the buffer unit 36. Instead, each diffuser hole 35 is indirectly connected to the buffer unit 36 ​​through the horizontal guide path 38.

[0081] This embodiment is based on the same principle as embodiment 3, but the structure of the horizontal guide passage 38 is more complete. Although this setting increases the complexity and manufacturing cost of the spray structure 33, it has been found in practice that its airflow uniformity is the highest among all embodiments.

[0082] Example 5

[0083] See Figure 7 This embodiment provides a semiconductor vapor phase epitaxial deposition system, which mainly utilizes the precursor packaging container provided in embodiments 1-4 above for epitaxial growth.

[0084] It includes a pre-device arranged sequentially along the carrier gas forward direction, a precursor encapsulation container provided in embodiments 1-4 above, and a post-device, with the precursor encapsulation container provided in embodiment 4 being the most preferred; the pre-device is used at least to provide the carrier gas; the post-device is used at least to perform epitaxial growth based on the gaseous precursor carried by the carrier gas after passing through the precursor encapsulation container.

[0085] For example, the pre-processing equipment may include a carrier gas supply device 61 and a first flow meter 62. The first flow meter 62 is provided between the output end of the carrier gas supply device 61 and the air inlet channel 30 of the precursor packaging container to monitor the carrier gas inlet flow rate. The post-processing equipment may include a deposition device 64 and a second flow meter 63. The second flow meter 63 is provided between the air outlet channel 40 of the precursor packaging container and the deposition device 64 to monitor the carrier gas outlet flow rate. Of course, depending on the actual process requirements, pressure gauges, control valves, and other connecting gas pipe interfaces may also be provided, or the carrier gas supply device 61 and / or deposition device 64 may be directly connected to the precursor packaging container, etc., in other variations.

[0086] Semiconductor epitaxial growth using the above-described semiconductor epitaxial growth system may, for example, include the following steps:

[0087] A solution of the solid precursor is filled into the first accommodating chamber of the precursor encapsulation container, and the solid precursor is filled into the second accommodating chamber.

[0088] The carrier gas is sequentially passed through the inlet channel, the second accommodating chamber, the connecting channel, the first accommodating chamber, and the outlet channel, so that the carrier gas carries the gaseous precursor.

[0089] The carrier gas carrying the gaseous precursor is introduced into the deposition equipment of the vapor phase epitaxial deposition system for epitaxial growth.

[0090] It should be noted that, in this embodiment, the solid precursor in the encapsulation container may include at least one of the following: non-metallic elements, metallic elements, metal halides, and organometallic compounds. For example, dimethyl sulfide (DMH), hafnium tetrachloride (HfCl4), aluminum trichloride (AlCl3), magnesia pyrocene (Cp2Mg), trimethylindium (TMIn), zirconia tetrachloride (ZrCl4), indium trichloride (InCl3), titanium iodide (TiI4), carbonyl tungsten, Ba(DPM)2, Sr(DPM)2, TiO(DPM)2, Zr(DPM)4, decaborane, octadecborane, boron, magnesium, gallium, indium, antimony, copper, phosphorus, arsenic, lithium, sodium tetrafluoroborate, precursors doped with alkyl-amide ligands, organometallic precursors, zirconium tert-butoxide (Zr(t-OBu)4), tetraalkyl... Diethylaminozirconium (Zr(Net2)4), tetraalkyldiethylaminohafnium (Hf(Net2)4), tetra(dimethylamino)titanium (TDMAT), tert-butyliminotris(tert-butylamino)tantalum (TBTDET), penta(pentamethylamino)tantalum (PDMAT), penta(ethylmethylamino)tantalum (PEMAT), tetra(dimethylamino)zirconium (Zr(NMe2)4), tert-butoxide hafnium (Hf(tOBu)4), xenon difluoride (XeF2), xenon tetrafluoride (XeF4), xenon hexafluoride (XeF6), and compatible combinations and mixtures of two or more of the above, but not limited thereto.

[0091] Based on the above implementation examples, it can be clearly understood that the semiconductor epitaxial growth precursor packaging container and semiconductor epitaxial growth method provided by the embodiments of the present invention utilize a narrow connecting channel to connect the first accommodating chamber and the second accommodating chamber. On the one hand, the first precursor in the first accommodating chamber can compensate for the vapor pressure drop caused by the continuous consumption of the solid source in the second precursor, making it more stable as a solution source for the second precursor at the end of its use. On the other hand, the narrow connecting channel quickly adjusts the vapor pressure difference inside the first and second accommodating chambers caused by changes in external factors, providing a continuous and stable precursor output, improving process stability, reducing the replacement cycle of the solid source, and improving the gallium growth efficiency of the machine.

[0092] It should be noted that the main application of this invention is as a pre-encapsulation container device for solid-liquid mixtures. It is mainly aimed at the problem that the solid source in the solution source is continuously consumed, and the vapor pressure decreases with long-term use, and the solution source becomes more unstable at the end of its use. However, this invention can also be used as an encapsulation container for pure solid sources (such as trimethylindium TMIn, magnesium pyrocene Cp2Mg, etc.), and when used as a pure solid source, it also has a better constant solid source vapor pressure.

[0093] It should be understood that the above embodiments are merely illustrative of the technical concept and features of the present invention, and are intended to enable those skilled in the art to understand the content of the present invention and implement it accordingly. They should not be construed as limiting the scope of protection of the present invention. All equivalent changes or modifications made in accordance with the spirit and essence of the present invention should be covered within the scope of protection of the present invention.

Claims

1. A semiconductor epitaxial growth precursor packaging container, characterized in that, include: A first receiving body, the first receiving body surrounding to form a first receiving chamber for receiving a first precursor; The second accommodating body is disposed inside the first accommodating cavity, and the second accommodating body surrounds to form a second accommodating cavity for accommodating the second precursor; An air intake passage, which is connected to the second accommodating chamber; An air outlet channel is connected to the first accommodating chamber, and both the air inlet channel and the air outlet channel are equipped with air passage connectors. And, a connecting channel, the connecting channel connecting the first receiving chamber and the second receiving chamber, and the connecting channel being elongated; Wherein, the second precursor is a solid precursor, and the first precursor is a solution of the solid precursor; The carrier gas passes sequentially through the air inlet channel, the second accommodating chamber, the connecting channel, the first accommodating chamber, and the air outlet channel; The air intake channel includes an air intake pipe extending into the second accommodating chamber and a spray structure connected to and communicating with the end of the air intake pipe. The spray structure is provided with a transverse gas passage, a plurality of diffusion holes communicating with the transverse gas passage, a buffer unit communicating with each of the diffusion holes, and a diffusion structure connected to each of the buffer units in sequence along the air intake direction of the air intake pipe. The diffusion structure is a multi-hole structure. The transverse gas passage is used to distribute the carrier gas transversely and evenly in the radial direction with the air intake direction as the axis.

2. The precursor packaging container according to claim 1, characterized in that, The second accommodating body includes a nested outer cavity wall and an inner cavity wall, the second accommodating chamber is located inside the inner cavity wall, and the buffer gap layer formed between the inner cavity wall and the outer cavity wall constitutes part of the connecting channel; The buffer gap layer is connected to the second accommodating chamber through multiple through holes.

3. The precursor packaging container according to claim 2, characterized in that, The second accommodating body has a perforated plate at one end away from the air intake channel, and the perforations in the perforated plate connect the second accommodating chamber and the buffer gap layer.

4. The precursor packaging container according to claim 2, characterized in that, The connection channel also includes an air guide tube, which is disposed on the second accommodating body and penetrates the outer cavity wall. The air guide tube connects the buffer gap layer and the first accommodating chamber. The air guide tube extends from the outer cavity wall to the side of the first accommodating chamber away from the air intake channel.

5. The precursor packaging container according to claim 4, characterized in that, The end of the air guide tube away from the air inlet channel is bent at a predetermined angle toward the center of the first accommodating chamber.

6. The precursor packaging container according to claim 3, characterized in that, The mesh in the perforated plate is evenly spaced, and the diameter of the mesh is 5-200μm; And / or, the width of the buffer gap layer is 1000-5000μm.

7. The precursor packaging container according to claim 1, characterized in that, The buffer unit is provided with a horizontal guide passage, which connects the diffuser hole and the buffer unit. The carrier gas flowing through the horizontal guide passage enters the buffer unit in the radial direction of the spray structure.

8. The precursor packaging container according to claim 7, characterized in that, The horizontal guide path is located circumferentially in the buffer unit.

9. The precursor packaging container according to claim 1, characterized in that, The first accommodating chamber is connected to an openable and closable first feeding port for adding the first precursor, and the second accommodating chamber is connected to an openable and closable second feeding port for adding the second precursor; And / or, control valves are provided on both the air intake channel and the air outlet channel.

10. A method for semiconductor epitaxial growth using the precursor packaging container according to any one of claims 1-9, characterized in that, include: A solution of the solid precursor is filled into the first accommodating chamber of the precursor encapsulation container, and the solid precursor is filled into the second accommodating chamber; The carrier gas is sequentially passed through the inlet channel, the second accommodating chamber, the connecting channel, the first accommodating chamber, and the outlet channel, so that the carrier gas carries the gaseous precursor. The carrier gas carrying the gaseous precursor is introduced into the deposition equipment of the vapor phase epitaxial deposition system for epitaxial growth.

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