Substrate Processing Apparatus, Thermal Insulation Component Assembly, and Method for Manufacturing Semiconductor Device

Abstract

The present invention provides a structure including: a substrate holder having a heat-insulating region at a lower portion thereof; a first reaction tube that houses the substrate holder therein and has openings at an upper end and a lower end; a second reaction tube that has a closed upper end and an open lower end; a furnace port flange portion having a holding portion in a first space between the first reaction tube and the second reaction tube; and a heating portion that is disposed so as to cover the second reaction tube and heats a substrate placed on the substrate holder within the first reaction tube. The structure further includes: a first high-reflection member that is disposed in the heat-insulating region and has a higher infrared reflectance than a heat-insulating member; and a second high-reflection member that is disposed in the first space at a lower portion of the second reaction tube and on an inner wall of the second reaction tube and has a higher infrared reflectance than the heat-insulating member disposed at an upper end of the furnace port flange portion and configured as the holding portion.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, a heat insulating member assembly, and a method for manufacturing a semiconductor device. Background Art

[0002] As an example of a substrate processing apparatus, a semiconductor manufacturing apparatus is known. Further, as an example of a semiconductor manufacturing apparatus, a vertical type apparatus is known. In the vertical type apparatus, sometimes a plurality of substrates are carried into a processing chamber provided inside a reaction tube while being held in multiple stages by a substrate holder, and while heating the substrates, a processing gas is supplied to the processing chamber, for example, to form a film on the substrates, and the substrates are processed (for example, refer to Japanese Unexamined Patent Application Publication No. 2019-021910 and Japanese Unexamined Patent Application Publication No. 2012-064804).

[0003] However, in such a vertical type apparatus, sometimes the processing quality of the substrates deteriorates due to heat release from the processing chamber to the outside. Summary of the Invention

[0004] Problems to be Solved by the Invention

[0005] An object of the present disclosure is to provide a structure capable of suppressing a decrease in the temperature of a processing chamber.

[0006] Means for Solving the Problems

[0007] According to one aspect of the present disclosure, there is provided a structure including:

[0008] A substrate holder having a heat insulating region that holds a plurality of heat insulating members at a lower portion thereof;

[0009] A first reaction tube that houses the substrate holder therein and has openings at an upper end and a lower end;

[0010] A second reaction tube that has a closed upper end and an open lower end;

[0011] A furnace port flange portion having a holding portion in a first space between the first reaction tube and the second reaction tube; and

[0012] A heating portion that is provided so as to cover the second reaction tube and heats a substrate placed on the substrate holder in the first reaction tube,

[0013] The substrate processing apparatus further includes:

[0014] A first high-reflection member that is provided in the heat insulating region and has a higher infrared reflectivity than the heat insulating member; and

[0015] The second high-reflection member is disposed below the second reaction tube and on the inner wall side of the second reaction tube in the first space, and has a higher infrared reflectivity than the heat insulator of the holding portion provided at the furnace mouth flange portion.

[0016] Advantages of the Invention

[0017] According to one aspect of the present disclosure, a structure capable of suppressing a temperature drop in a processing chamber can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 is a partial cross-sectional front view of a substrate processing apparatus according to an embodiment of the present disclosure.

[0019] Figure 2 is a front cross-sectional view of a substrate processing apparatus according to an embodiment of the present disclosure.

[0020] Figure 3A is a cross-sectional view showing the periphery of a heat insulation region of a substrate holder according to an embodiment of the present disclosure.

[0021] Figure 3B is a cross-sectional view showing a heat insulation plate with a reflection member.

[0022] Figure 4A is a perspective view showing a reflection plate according to an embodiment of the present disclosure.

[0023] Figure 4B is a cross-sectional view showing a support base of the reflection plate.

[0024] Figure 5 is a perspective view showing a reflection plate supported by a manifold.

[0025] Figure 6 is a perspective view showing a third high-reflection member according to an embodiment of the present disclosure.

[0026] Figure 7 is a cross-sectional view showing a third high-reflection member according to another embodiment of the present disclosure.

[0027] Figure 8 is a diagram showing the hardware structure of a controller in a substrate processing apparatus according to an embodiment of the present disclosure.

[0028] Figure 9 is a flowchart of a substrate processing step according to an embodiment of the present disclosure.

[0029] Figure 10 is a flowchart of a substrate processing step according to another embodiment of the present disclosure. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0030] Hereinafter, an embodiment of the present disclosure will be described with reference to the accompanying drawings. In addition, the drawings used in the following description are all schematic, and the dimensional relationships of the elements shown in the drawings, the ratios of the elements, etc. are not necessarily the same as in reality. In addition, among the multiple drawings, the dimensional relationships of the elements and the ratios of the elements are not necessarily the same either.

[0031] As Figure 1 shown, as an example, the substrate processing apparatus 10 of the present embodiment is configured as a batch-type vertical apparatus for performing a film-forming process in a method for manufacturing an IC.

[0032] As Figure 1 and Figure 2 shown, the substrate processing apparatus 10 includes a processing tube 11 as a vertically supported reaction tube. The processing tube 11 is composed of an outer tube 12 as a second reaction tube and an inner tube 13 as a first reaction tube that are arranged concentrically with each other.

[0033] As an example, the outer tube 12 is made of quartz (SiO2) and is integrally formed into a cylindrical shape with a closed upper end and an open lower end. A processing chamber 14 is formed inside the outer tube 12 and a manifold 16 of a furnace port flange portion described later.

[0034] As an example, the inner tube 13 is made of quartz (SiO2) and is formed into a cylindrical shape with both upper and lower ends open. The inner tube 13 is disposed in the processing chamber 14, and the hollow portion of the inner tube 13 is configured to form a processing flow path for loading a susceptor 31 as a substrate holder. Through the gap between the outer tube 12 and the inner tube 13, an exhaust-side flow path 17 as a first space is formed into a circular ring shape with a constant width cross-sectional shape. The lower end opening of the inner tube 13 is specifically configured as a furnace port space of a furnace port portion 15 for loading and unloading the susceptor 31. In addition, the exhaust-side flow path 17 and the furnace port portion 15 are also part of the processing chamber 14.

[0035] In addition, the outer tube 12 and the inner tube 13 are not limited to quartz (SiO2), and may also be formed of a material with high heat resistance such as silicon carbide (SiC), quartz, or a composite material of silicon carbide.

[0036] As described later, the susceptor 31 inserted into the inner tube 13 is configured to hold a plurality of substrates 1 (hereinafter also referred to as wafers) in a vertically arranged state. Therefore, the inner diameter of the inner tube 13 is set to be larger than the maximum outer diameter of the processed substrate 1 (for example, a diameter of 300 mm).

[0037] At the lower end between the outer tube 12 and the inner tube 13, a manifold 16 serving as a furnace mouth flange portion formed in a substantially cylindrical shape is provided. For the replacement of the outer tube 12 and the inner tube 13, etc., the manifold 16 is detachably attached to the outer tube 12 and the inner tube 13 respectively. By supporting the manifold 16 on the casing 2 of the substrate processing apparatus 10, the processing tube 11 is vertically installed. The inner tube 13 is disposed on a support portion on a circular plate protruding from the manifold 16.

[0038] As Figure 1 shown, one end of the exhaust pipe 18 is connected to the cylindrical portion 16A of the manifold 16, and the exhaust pipe 18 is in a state of communicating with the lowermost end portion of the exhaust side flow path 17.

[0039] An exhaust device 19 controlled by a pressure controller 21 is connected to the other end of the exhaust pipe 18, and a pressure sensor 20 is connected in the middle of the exhaust pipe 18. The pressure controller 21 is configured to perform feedback control on the exhaust device 19 based on the measurement result from the pressure sensor 20.

[0040] In addition, a gas introduction pipe 22 is disposed on the cylindrical portion 16A of the manifold 16 in a manner of communicating with the furnace mouth portion 15, and a raw material gas supply device, a reaction gas supply device, and an inert gas supply device (hereinafter referred to as a gas supply device) 23 are connected to the gas introduction pipe 22. The gas supply device 23 is configured to be controlled by a gas flow controller 24. The gas introduced from the gas introduction pipe 22 into the furnace mouth portion 15 flows through the processing flow path and is discharged by the exhaust pipe 18 through the exhaust side flow path 17 (flowing through the processing chamber 14).

[0041] A seal cover 25 serving as a cover for closing the lower end opening contacts the manifold 16 from the lower side in the vertical direction. The seal cover 25 is formed in a disk shape substantially equal to the outer diameter of the manifold 16, and is configured to be lifted and lowered in the vertical direction by a susceptor elevator 26 protected by a susceptor cover 37 disposed in the standby chamber 3 of the casing 2. The susceptor elevator 26 is composed of a feed screw shaft device driven by a motor (not shown) and a bellows, etc.

[0042] A rotating shaft 30 is disposed on the center line of the seal cover 25 and is rotatably supported. The rotating shaft 30 is configured to be rotationally driven by a susceptor rotation mechanism 29 including a motor, etc. A susceptor 31 is vertically supported at the upper end of the rotating shaft 30.

[0043] (Structure of the susceptor)

[0044] As Figure 2 shown, the susceptor 31 includes a pair of upper and lower end plates 32, 33, an end plate

[0045] Among the three holding members 34, the holding grooves engraved on the same layer open facing each other. The susceptor 31 is between the end plate 32 and the end plate 38. By inserting the substrate 1 between the holding grooves on the same layer of the three holding members 34, a plurality of substrates 1 are arranged and held in a horizontal and mutually centered alignment state.

[0046] In addition, between the end plate 38 and the end plate 33 of the susceptor 31, a heat insulating member is provided between the holding grooves 39 on the same layer of the three holding members 34. The heat insulating member may also insert the heat insulating plate 120 with a reflective member as the first high-reflection member, and a plurality of heat insulating plates 120 with reflective members are arranged and held in a horizontal and mutually centered alignment state.

[0047] As Figure 1 shown, the susceptor 31 is configured to distinguish between the substrate processing region 35 between the end plate 32 holding a plurality of substrates 1 and the end plate 38 and the heat insulating plate region (hereinafter, also referred to as the heat insulating region) 36 between the end plate 38 holding a plurality of heat insulating plates 120 with reflective members and the end plate 33, and the heat insulating plate region 36 is arranged below the substrate processing region 35. The heat insulating plate region 36 holds a plurality of heat insulating plates 120 with reflective members at a constant interval between the end plate 38 and the end plate 33.

[0048] (Heater)

[0049] As Figure 1 、 Figure 2 、 Figure 3A shown, outside the processing tube 11, a heater unit 40 as a heating part is arranged in a concentric circle manner and is arranged in a state supported by the box body 2. Thus, the heater unit 40 is configured to heat the substrate 1 in the substrate processing region 35 held by the susceptor 31 inserted into the inner tube 13. The heater unit 40 is formed of stainless steel (SUS) into a cylindrical shape with a closed upper end and an open lower end, preferably formed into a cylindrical shape, and a heat insulating member 40a and a heat insulating member 41 are arranged inside it, and an electric heater (not shown) is assembled to the heat insulating member 41.

[0050] Hereinafter, with reference to FIGS. 3 to Figure 7 , the high-reflection member will be described in detail.

[0051] (Heat insulating plate with reflective member: First high-reflection member)

[0052] As Figure 3BAs shown, as an example, the heat insulation plate 120 with a reflection component as the first high-reflection component is formed in a film shape (with a thickness thinner than that of the disc 121) on the surface of an opaque quartz disc 121 serving as a heat insulation member, where the infrared reflectivity of the first high-reflection component 122 is higher than that of the opaque quartz. It should be noted that the opaque quartz disc 121 is an example of the heat insulation plate of the present disclosure.

[0053] In addition, the heat insulation plate 120 with a reflection component itself can also be formed of a material having a heat insulation property equal to or higher than that of the opaque quartz and an infrared reflectivity higher than that of the opaque quartz.

[0054] In this way, by disposing the heat insulation plate 120 with a reflection component in the heat insulation plate region 36 of the susceptor 31, compared with only disposing a heat insulation member, the heat release from the furnace port 15 can be suppressed.

[0055] (Reflection plate: Second high-reflection component)

[0056] As Figure 3A shown, a reflection plate 124 with a higher infrared reflectivity than the outer tube 12 and the inner tube 13 is disposed in the exhaust-side flow path 17 between the outer tube 12 and the inner tube 13. Specifically, at the upper end portion of the inner peripheral surface of the manifold 16, as a holding portion, a plurality of blocks 127 are provided along the circumferential direction, and the reflection plate 124 serving as the second high-reflection component is disposed on the block 127 in such a manner that it is provided at the lower part of the outer tube 12 and on the inner wall of the outer tube 12.

[0057] As Figure 4A shown, the reflection plate 124 includes a support base 124A formed in an arc shape, and a plurality of (two in this embodiment) struts 124B are erected on the support base 124A. On these struts 124B, a plurality of arc-shaped reflectors 124C are supported at regular intervals in the vertical direction.

[0058] As an example, the support base 124A, the struts 124B, and the reflectors 124C can be formed of opaque quartz or the like, and the second high-reflection component 126 is formed in a film shape on the surfaces thereof. The second high-reflection component 126 is composed of a material having an infrared reflectivity higher than that of the material forming the support base 124A, the struts 124B, and the reflectors 124C (in this embodiment, as an example, it is opaque quartz) (refer to Figure 4B ). As the material of the second high-reflection component 126, the same material as the first high-reflection component 122 of the heat insulation plate 120 with a reflection component can be used. In addition, the film thickness of the second high-reflection component 126 is thinner than that of the disc 121 of the heat insulation plate 120 with a reflection component.

[0059] Alternatively, these support bases 124A, struts 124B, and the reflector 124C itself can be formed of a material having heat insulation properties equal to or better than those of opaque quartz and a higher infrared reflectivity than opaque quartz.

[0060] As Figure 5 shown, the reflector 124 mounted on the block 127 is fixed by bolts or the like. Moreover, a plurality of reflectors 124 formed in an arc shape are arranged inside the first space S1 so as to surround the inner tube 13.

[0061] As Figure 3A shown, in a state where the susceptor 31 is disposed at a predetermined position (the position of the processing substrate 1) in the inner tube 13, the reflector 124 is disposed at a position facing the heat insulation plate region 36 of the susceptor 31 and at a position lower than the end plate 38.

[0062] In addition, in order not to block the exhaust side flow path 17, gaps for allowing gas to pass through are provided between the reflector 124 and the outer tube 12 and between the reflector 124 and the inner tube 13.

[0063] (Third high-reflection member)

[0064] As Figure 3A shown, inside the second space S2 between the heater unit 40 and the outer tube 12, a cylindrical third high-reflection member 128 as shown is arranged along the outer peripheral surface of the outer tube 12. The third high-reflection member 128 of the present embodiment is formed in a cylindrical shape along the outer surface shape of the outer tube 12, and an outer flange 128A extending radially outward is formed at the lower end. Figure 6

[0065] Figure 3A As shown, the manifold 16 located below the outer tube 12 has a cylindrical portion 16A, an upper flange 16B extending radially outward is integrally formed at the upper end of the cylindrical portion 16A, and a lower flange 16C extending radially outward is integrally formed at the lower end of the cylindrical portion 16A.

[0066] On the outer side of the upper surface of the upper flange 16B, an annular cooling ring 130 having a flow path formed therein for cooling water to flow is integrally provided. A groove for embedding an O-ring 132 made of an elastomer for sealing the gap between the cooling ring 130 is formed on the upper surface of the upper flange 16B, and a groove for embedding an O-ring 136 made of an elastomer for sealing the gap between the cooling ring 130 and the outer flange 12A of the outer tube 12 is formed on the upper surface of the cooling ring 130. The second space S2 is sealed by these O-rings. In addition, by flowing cooling water through the cooling ring 130, it is possible to cool the periphery of the cooling ring 130, the O-ring 132, and the O-ring 136, and it is possible to suppress deterioration and damage of the O-ring 132 and the O-ring 136 caused by heat. Moreover, through the cooling ring 130, the heat transfer from the outer flange 12A of the outer tube 12 to the upper flange 16B can be reduced.

[0067] A fixing ring 140 is disposed above the outer flange 12A of the outer tube 12, and the outer flange 12A is clamped between the fixing ring 140 and the cooling ring 130. In addition, the fixing ring 140 is fixed to the cooling ring 130 by bolts 142.

[0068] A third high-reflection member 128 is placed above the fixing ring 140 via a ring 144. As an example, the third high-reflection member 128 can be formed of a material having a higher infrared reflectivity than the material (opaque quartz) constituting the outer tube 12.

[0069] In addition, instead of disposing the cylindrical third high-reflection member 128 outside the outer tube 12, as Figure 7 shown, a reflective film 146 made of a material having a higher infrared reflectivity than the material constituting the outer tube 12 can also be formed on the outer peripheral surface of the outer tube 12. In addition, it is preferable that the thickness of the reflective film 146 is thinner than the thickness of the circular plate 121 of the heat insulating plate 120 with a reflective member.

[0070] As the material of the reflective film, the same material as that used for the heat insulating plate 120 with a reflective member and the reflective plate 124 can be used.

[0071] As Figure 3A shown, in a state where the susceptor 31 is disposed at a predetermined position in the inner tube 13 (a state of processing the substrate 1), the reflective plate 124 and the third high-reflection member 128 are disposed at positions opposed to the heat insulating plate region 36 of the susceptor 31 and at a position lower than the end plate 38. In other words, the height of the reflective plate 124 and the third high-reflection member 128 is determined so as not to be opposed to the substrate 1 supported by the heat insulating member 41 and the susceptor 31, that is, not to be opposed to the substrate processing region 35.

[0072] Here, as the material of each high-reflection component (the first high-reflection component 122, the second high-reflection component 124, and the third high-reflection component 128), as an example, gold (Au: infrared reflectivity 97%), silver (Ag: infrared reflectivity 95%), platinum (Pt: infrared reflectivity 90%), etc. can be used, but other materials can also be used in addition. In addition, the infrared reflectivity of quartz is 50%. It should be noted that, as an example, the reflectivity in this specification is the infrared reflectivity near a wavelength of 3000 nm (for example, above 2800 nm and below 3200 nm). For example, at 600 °C of infrared rays, the peak of the emission wavelength is 3200 nm, and at 800 °C it is 2800 nm.

[0073] Here, the infrared reflectivity of the first high-reflection component 122 (the heat-insulating plate 120 with a reflection component), the second high-reflection component 126 (the reflector 124), and the third high-reflection component 128 is preferably 80% or more. However, even if it is less than 80%, as long as it is higher than 50%, an infrared reflection effect can be obtained.

[0074] The infrared reflectivities of the first high-reflection component 122 (the heat-insulating plate 120 with a reflection component), the second high-reflection component 126 (the reflector 124), and the third high-reflection component 128 can be the same or at least one of the reflectivities can be different. That is, as long as each is at least higher than 50%, an infrared reflection effect can be obtained.

[0075] In addition, the reflector 124 can also form the second high-reflection component 126 in a film shape on the surface of the outer tube 12 in the same manner as the third high-reflection component 128. The uppermost end of the third high-reflection component 128 can also be located at a position higher than the uppermost end of the reflector 124.

[0076] According to this embodiment, the heat-insulating plate 120 with a reflection component, the reflector 124, and the third high-reflection component are arranged at positions facing the heat-insulating plate area 36. Therefore, not only can the heat release from the furnace mouth portion 15 be suppressed, but also the heat release from the annular cooling ring 130 in which a flow path for cooling water flows inside can be suppressed.

[0077] As Figure 8 shown, the substrate processing apparatus 10 of this embodiment includes a control computer, that is, a controller 200, as a control unit. The controller 200 has a computer main body 203 including a CPU (Central Processing Unit) 201 and a memory 202, etc., a communication IF (Inter face) 204 as a communication unit, a storage device 205 as a storage unit, and a display / input device 206 as an operation unit. That is, the controller 200 includes components constituting a general computer.

[0078] The CPU 201 forms the center of the operation unit, executes the control program stored in the storage device 205, and executes the recipe (e.g., the processing recipe) stored in the storage device 205 according to the instructions from the display / input device 206. In addition, the processing recipe of course includes Figure 9 the processes from step S1 to step S9 described later. Of course, it includes Figure 10 the processes from step S1 to step S9 described later.

[0079] In addition, the memory 202 as a temporary storage unit is a flash memory, a RAM (Random Access Memory), etc. In particular, the RAM functions as a working area of the CPU 201, etc.

[0080] The communication unit 204 is electrically connected to the pressure controller 21, the gas flow controller 24, the drive controller 28, and the temperature controller 64 (collectively referred to as sub-controllers). The controller 200 can process data related to the operations of the sub-controllers and each component via this communication unit 204. Here, the sub-controller has at least a structure of the main body 203 and may have the same structure as the controller 200.

[0081] In the embodiment of the present disclosure, the controller 200 is taken as an example for description, but it is not limited thereto, and a general computer system can be used to implement it. For example, by installing the program from an external recording medium 207 such as a USB that stores the program for executing the above processing in a general computer, the above processing can also be executed. In addition, a communication IF 204 such as a communication line, a communication network, and a communication system can also be used. In this case, for example, the program can also be announced on a bulletin board of the communication network and provided by overlapping it with a carrier wave via the network. Then, by starting the program provided in this way and executing it under the control of the OS (Operating System) in the same manner as other application programs, the above processing can be executed.

[0082] (Film formation process)

[0083] Next, as one process of the manufacturing process of a semiconductor device (equipment) using the above substrate processing apparatus 10, an example of the sequence of the process of forming a film on a substrate (hereinafter, also referred to as a film formation process) will be described.

[0084] In the film formation process of the present embodiment, a film is formed on the substrate 1 by simultaneously performing at least during a constant period the step of supplying a source gas to the substrate 1 in the processing chamber 14 and the step of supplying a reaction gas to the substrate 1 in the processing chamber 14. Additionally, it is also possible to perform a cycle having the steps of supplying a source gas and a reaction gas to the substrate 1 in the processing chamber 14 and removing unreacted residual gas from the processing chamber 14 a predetermined number of times (1 or more times).

[0085] In addition, in the case of using the term "substrate" in this specification, it is the same as the case of using the term "wafer".

[0086] In the film formation process of the present embodiment, a film is formed on the substrate 1 by simultaneously performing the step of supplying a source gas to the substrate 1 in the processing chamber 14 and the step of supplying a reaction gas to the substrate 1 in the processing chamber 14. Here, the case of simultaneous supply throughout the period of supplying the source gas and the reaction gas is described below.

[0087] (Substrate loading: Step S1)

[0088] The susceptor 31 holding the substrate 1 and the heat insulating plate 120 with a reflection member is loaded into the processing tube 11 by operating the susceptor elevator 26 by the drive controller 28 and is carried into (susceptor loading) the processing chamber 14. At this time, the sealing lid 25 is in a state of hermetically sealing (sealing) the processing chamber 14 via an O-ring (not shown).

[0089] In addition, in the substrate processing area 35 of the susceptor 31, a plurality of substrates 1 can be loaded (wafer supply) by operating a transfer device (not shown) and a transfer device elevator by the drive controller 28. In addition, a plurality of heat insulating plates 120 with reflection members are pre-loaded in the heat insulating plate area 36 of the susceptor 31.

[0090] (Pressure adjustment and temperature adjustment: Step S2)

[0091] The exhaust device 19 is controlled by the pressure controller 21 so that the processing chamber 14 becomes a predetermined pressure (vacuum degree). At this time, the pressure in the processing chamber 14 is measured by the pressure sensor 20, and feedback control of the exhaust device 19 is performed based on the measured pressure information. The exhaust device 19 maintains an operating state throughout at least the period until the processing of the substrate 1 is completed.

[0092] In addition, the substrate 1 in the processing chamber 14 is heated by the heater unit 40 in such a way that it reaches a predetermined processing temperature. At this time, based on the temperature information detected by the thermocouple 65 provided in the heater unit 40, feedback control is performed on the energization of the electric heater of the heater unit 40 so that the processing chamber 14 has a predetermined temperature distribution through the temperature controller 64. The heating of the processing chamber 14 by the heater unit 40 continues at least until the processing of the substrate 1 is completed. Here, as the processing temperature, it is maintained at 650 °C or higher and 800 °C or lower, preferably 650 °C or higher and 700 °C or lower. [[ID=~1]]

[0093] In addition, the rotation of the susceptor 31 and the substrate 1 by the motor of the susceptor rotation mechanism 29 is started. Specifically, when the motor of the susceptor rotation mechanism 29 is rotated by the drive controller 28, the substrate 1 rotates as the susceptor 31 rotates. The rotation of the susceptor 31 and the substrate 1 by the rotation of the motor of the susceptor rotation mechanism 29 continues at least until the processing of the substrate 1 is completed.

[0094] (Raw material gas supply: Step S3)

[0095] When the temperature of the processing chamber 14 stabilizes at a preset processing temperature, the supply of the raw material gas to the substrate 1 in the processing chamber 14 and the supply of the reaction gas to the substrate 1 in the processing chamber 14 are performed simultaneously.

[0096] In this step, the mixed gas of the raw material gas and the reaction gas, whose flow rates are respectively controlled by the gas flow controller 24, is introduced into the processing chamber 14 from the gas introduction pipe 22. Then, this mixed gas thermally decomposes in the gas phase of the processing chamber 14, and a film is formed on the substrate 1. The unreacted mixed gas flows through the exhaust-side flow path 17 and is discharged from the exhaust pipe 18. At this time, N2 gas can also be introduced into the gas introduction pipe 22 simultaneously. In addition, the gas introduction pipe for the raw material gas and the gas introduction pipe for the reaction gas can be provided independently, and the raw material gas and the reaction gas are mixed in the processing chamber 14 to form a film on the substrate 1.

[0097] (Purge gas supply: Step S4)

[0098] After the film is formed, the supply of the raw material gas and the reaction gas is stopped. Then, at this time, the processing chamber 14 is evacuated by the exhaust device 19, and the unreacted or raw material gas, reaction gas, or their mixed gas remaining in the processing chamber 14 after contributing to the film formation is discharged from the processing chamber 14. At this time, N2 gas can also be supplied to the processing chamber 14. The N2 gas acts as a purge gas, thereby improving the effect of discharging the gas remaining in the processing chamber 14 from the processing chamber 14.

[0099] (Performed a predetermined number of times)

[0100] Although not shown, a film with a predetermined film thickness can also be formed on the substrate 1 by performing the above steps in a cycle that is not simultaneous, i.e., without synchronizing them, for a predetermined number of times (n times).

[0101] (Purge and atmospheric pressure recovery: Step S5)

[0102] After the film formation process is completed, N2 gas is supplied from the gas introduction pipe 22 to the processing chamber 14 and discharged from the exhaust pipe 18. The N2 gas acts as a purge gas. Thereby, the processing chamber 14 is purged, and the gas and reaction by-products remaining in the processing chamber 14 are removed from the processing chamber 14 (purge). At the same time, cooling air 90 as a cooling gas is supplied to the gas introduction path 107 via the check valve 104. The supplied cooling air 90 accumulates temporarily in the buffer portion 106 and is blown out into the space 75 from the plurality of opening holes 110 via the gas supply flow path 108. And the cooling air 90 blown out from the opening holes 110 into the space 75 is discharged through the exhaust holes 81 and the exhaust pipe 82. After that, the environment of the processing chamber 14 is replaced with an inert gas (inert gas replacement), and the pressure of the processing chamber 14 is restored to atmospheric pressure (atmospheric pressure recovery).

[0103] (Substrate unloading: Step S6)

[0104] By using the drive controller 28 to lower the susceptor elevator 26, the seal cover 25 is lowered, and the lower end opening of the processing tube 11 is opened. Then, in a state where the processed substrate 1 is supported by the susceptor 31, it is unloaded from the lower end of the processing tube 11 to the outside of the processing tube 11 (susceptor unloading). The processed substrate 1 is taken out from the susceptor 31 (wafer discharge). Through the above, the processing of the substrate 1 is completed.

[0105] (Functions and effects of the structure of the substrate processing apparatus)

[0106] Next, the functions and effects of the structure of the substrate processing apparatus 10 of the present embodiment will be described.

[0107] According to the substrate processing apparatus 10 of the present embodiment, the heater unit 40 is provided so as to surround the processing chamber 14, and the substrate 1 is heated from the side. Therefore, in particular, the central portion of the substrate 1 below the processing chamber 14 is difficult to be heated, and in addition, the temperature is likely to drop, and it takes time for the processing chamber 14 to warm up, and the recovery time (temperature stabilization time) tends to be long. However, as described above, by disposing the first high-reflection member 120 having a high infrared reflectivity in the heat insulation plate region 36, heat release to the lower part (furnace port portion 15) of the substrate processing region 35 can be suppressed through the heat insulation effect and the infrared reflection effect, and the temperature drop can be reduced.

[0108] That is, according to the present embodiment, by disposing the first high-reflection member 120 having a high infrared reflectivity in the heat insulation plate region 36, the radiant energy of the first high-reflection member 120 is reduced, and the amount of heat received near the center of the substrate 1 below the susceptor 31 and above the heat insulation plate region 36 can be increased. Thereby, the in-plane temperature deviation caused by the decrease in the temperature of the center of the substrate below the processing chamber 14 can be reduced.

[0109] In addition, in the substrate processing apparatus 10 of the present embodiment, a reflector 124 having a high infrared reflectivity is disposed in the exhaust-side flow path 17 between the outer tube 12 and the inner tube 13. Therefore, while ensuring the exhaust path of the gas, the radiant energy passing below the substrate processing region 35 is reduced. Therefore, compared with the case where the reflector 124 is not disposed, the temperature decrease on the lower side of the susceptor 31 can be suppressed, and the amount of heat received by the substrate 1 disposed on the lower side of the susceptor 31 can be increased. In addition, the reflector 124 also enhances heat insulation in the vertical direction. Therefore, the plurality of reflectors 124C are supported at a constant interval in the vertical direction.

[0110] In addition, in the substrate processing apparatus 10 of the present embodiment, a third high-reflection member 128 having a high infrared reflectivity is disposed on the radially outer side of the outer tube 12. The third high-reflection member 128 suppresses heat release in the lateral direction and provides heat insulation.

[0111] And, in the substrate processing apparatus 10 of the present embodiment, the second high-reflection member 124 is disposed in the exhaust-side flow path 17 between the outer tube 12 and the inner tube 13 in such a manner that it is provided at the lower part of the outer tube 12 and on the inner wall side of the outer tube 12, and a third high-reflection member 128 is disposed on the radially outer side of the outer tube 12. Through these second high-reflection member 124 and third high-reflection member 128, heat release to the cooling ring 130 is suppressed while providing heat insulation.

[0112] In this way, in the substrate processing apparatus 10 of the present embodiment, the heat release to the manifold 16 provided below the substrate processing region 35, the heat release to the cooling ring 130, and the heat release in the lateral direction can be effectively suppressed by the heat insulation plate 120 with the reflection member having the first high-reflection member 122, the reflector 124 having the second high-reflection member 126, and the third high-reflection member 128.

[0113] In addition, due to the heat release suppression effect of the present embodiment, the heater output can also be reduced, and energy saving can be achieved.

[0114] In addition, as an example, the first highly reflective member 122, the second highly reflective member 126, and the third highly reflective member 128 are formed thinner than the circular plate 121 of the heat insulating plate 120 with a reflective member, and have a small heat capacity. Therefore, the temperature easily rises during heating and easily drops during cooling, the temperature followability is improved, and the heater output can also be reduced.

[0115] Moreover, during substrate processing, heat release to the manifold 16 and the cooling ring 130 located below the substrate processing area 35 and heat release in the lateral direction are suppressed. Therefore, the output of the heater during the steady state can be reduced to save energy.

[0116] In addition, by suppressing heat release to the manifold 16, the temperature rise of the manifold 16 can be suppressed, and the thermal durability of the motor, the magnetic seal of the rotating shaft 30, etc. constituting the susceptor rotation mechanism 29 can be improved.

[0117] <Experimental Example>

[0118] In order to confirm the effects of the present embodiment, a substrate processing apparatus of an example and a substrate processing apparatus of a comparative example that applied the structure of the above-described embodiment were prototyped, and heat release was compared.

[0119] The substrate processing apparatus of the comparative example removed the reflector 124 and the third highly reflective member 128 from the substrate processing apparatus of the example, and installed a quartz circular plate 121 without a formed reflective member in place of the heat insulating plate 120 with a reflective member.

[0120] In the experiment, the processing chamber 14 was heated by the heater unit 40, and cooling water was made to flow into the cooling ring 130. The water temperature of the cooling water discharged from the cooling ring 130 was measured in a steady state where the temperature of the processing chamber 14 (here 800 °C) became constant.

[0121] As a result of the experiment, for the cooling water discharged from the substrate processing apparatus of the comparative example, the temperature of the cooling water discharged from the substrate processing apparatus of the example was reduced by about 1.5 °C. If this temperature is converted into heat, it is equivalent to a reduction of 300 W, and it can be seen that the effect of heat release brought about by the structure of the present embodiment is obtained.

[0122] In addition, as a result of measuring the temperature of the processing chamber 14, the time until the temperature of the processing chamber 14 reached a predetermined temperature when the processing chamber 14 was heated by the heater unit 40 and the time until the temperature of the processing chamber 14 dropped to the predetermined temperature after stopping the heating by the heater unit 40 were measured. As a result, it was found that the temperature change was faster in the substrate processing apparatus of the example than in the substrate processing apparatus of the comparative example.

[0123] (Other Embodiments)

[0124] As described above, the embodiments of the present invention have been specifically described. However, the present disclosure is not limited to the above-described embodiments, and various modifications can be made without departing from the gist thereof.

[0125] In the above method, a treatment temperature of 600°C or higher and 800°C or lower is described, but of course, it can also be applied to a change in the treatment temperature by changing the material of the high-reflection member or the like. Hereinafter, Figure 10 An example of forming a film on the substrate 1 using a source gas and a reaction gas will be described. In addition, the treatment temperature here is 500°C or higher and 600°C or lower.

[0126] In the film formation treatment of the present embodiment, a cycle of non-simultaneously performing the steps of supplying a source gas to the substrate 1 in the processing chamber 14, removing the source gas (residual gas) from the processing chamber 14, supplying a reaction gas to the substrate 1 in the processing chamber 14, and removing the reaction gas (residual gas) from the processing chamber 14 is performed a predetermined number of times (1 or more), whereby a film is formed on the substrate 1.

[0127] In addition, Figure 9 The results of a process different from the process shown (cyclic film formation) will be described, Figure 9 The same process as that shown is omitted here. Thus, the substrate loading process (step S1), the pressure adjustment and temperature adjustment process (step S2) have been described in detail, and thus are omitted here.

[0128] <Film Formation Treatment>

[0129] When the temperature, pressure, etc. in the processing chamber 14 are stabilized at a preset processing temperature and pressure, the following 4 steps, namely steps S3 to S6, are sequentially executed.

[0130] (Source Gas Supply: Step S3)

[0131] In this step, a source gas is supplied to the substrate 1 in the processing chamber 14.

[0132] In this step, the source gas introduced into the processing chamber 14 from the gas introduction pipe 22 is flow-controlled by the gas flow controller 24, flows through the processing chamber 14 of the inner pipe 13, and is discharged from the exhaust pipe 18 through the exhaust side flow path 17. At this time, N2 gas is caused to flow into the gas introduction pipe 22 simultaneously. The N2 gas is flow-adjusted by the gas flow controller 24, supplied to the processing chamber 14 together with the source gas, and discharged from the exhaust pipe 18. By supplying the source gas to the substrate 1, a first layer (for example, a thin film having a thickness of less than 1 atomic layer to several atomic layers) is formed on the outermost surface of the substrate 1.

[0133] (Purge Gas Supply: Step S4)

[0134] After forming the first layer, the supply of the source gas is stopped. At this time, the processing chamber 14 is evacuated by the exhaust device 19, and the unreacted source gas remaining in the processing chamber 14 or the source gas that contributed to the formation of the first layer is discharged from the processing chamber 14. At this time, the supply of N2 gas to the processing chamber 14 is maintained. The N2 gas acts as a purge gas, whereby the effect of discharging the gas remaining in the processing chamber 14 from the processing chamber 14 can be improved.

[0135] (Reaction gas supply: Step S5)

[0136] After Step S4 ends, a reaction gas is supplied to the substrate 1 in the processing chamber 14, that is, the first layer formed on the substrate 1. The reaction gas is thermally activated and supplied to the substrate 1.

[0137] In this step, the reaction gas introduced into the processing chamber 14 from the gas introduction pipe 22 is flow-controlled by the gas flow controller 24, flows through the processing chamber 14 of the inner pipe 13, and is discharged from the exhaust pipe 18 through the exhaust side flow path 17. At this time, N2 gas is simultaneously made to flow into the gas introduction pipe 22. The N2 gas is flow-adjusted by the gas flow controller 24, supplied to the processing chamber 14 together with the reaction gas, and discharged from the exhaust pipe 18. At this time, the reaction gas is supplied to the substrate 1. The reaction gas supplied to the substrate 1 reacts with at least a part of the first layer formed on the substrate 1 in Step S3. Thus, the first layer is thermally nitrided by non-plasma and changes (is modified) into the second layer.

[0138] (Purge gas supply: Step S6)

[0139] After forming the second layer, the supply of the reaction gas is stopped. Then, through the same processing steps as in Step S4, the unreacted reaction gas remaining in the processing chamber 14 or the reaction by-products that contributed to the formation of the second layer are discharged from the processing chamber 14. At this time, it is also possible not to completely discharge the gas remaining in the processing chamber 14, which is the same as in Step S4.

[0140] (Execute a predetermined number of times: Step S7)

[0141] By performing the above 4 steps in a cycle that is not simultaneous, i.e., not synchronized, a predetermined number of times (n times), a film with a predetermined film thickness can be formed on the substrate 1. In addition, it is preferable that the thickness of the second layer formed when performing one cycle of the above is less than the predetermined film thickness, and the above cycle is repeated multiple times until the film thickness of the film formed by laminating the second layer reaches the predetermined film thickness.

[0142] Moreover, the purge and atmospheric pressure recovery process (Step S8) and the substrate unloading process (Step S9) are also the same as Figure 9 Step S5 and Step S6 shown, and the description thereof is omitted.

[0143] In the present embodiment, a first high-reflection member 120 having a high infrared reflectivity is also disposed in the heat-insulating plate region 36, a second high-reflection member 124 is disposed in a holding portion provided inside the upper end of the manifold 16, and a third high-reflection member 128 is disposed radially outside the outer tube 12, whereby heat release to the manifold 16 and the cooling ring 130 provided below the substrate processing region 35 and heat release in the lateral direction of the processing chamber 14 can be suppressed.

[0144] In addition, in the above-described embodiment, an example of forming a film on a substrate has been described, but the film type is not particularly limited. For example, it can be applied to various film types such as a silicon nitride film (SiN), a nitride film such as a metal nitride film, a silicon oxide film (SiO film), and an oxide film such as a metal oxide film.

[0145] In addition, in the above-described embodiment, a substrate processing apparatus has been described, but it can be applied to the entire semiconductor manufacturing apparatus. Further, it is not limited to a semiconductor manufacturing apparatus, and it can also be applied to an apparatus for processing a glass substrate such as an LCD (Liquid Crystal Display) apparatus.

[0146] The entire disclosure of Japanese Patent Application No. 2020-50144 filed on March 19, 2020 is incorporated herein by reference.

[0147] All documents, patent applications, and technical specifications described in this specification are incorporated herein by reference to the same extent as if each document, patent application, and technical specification is specifically and individually described as being incorporated by reference.

[0148] Symbol Description

[0149] 1 - Substrate (wafer), 10 - Substrate processing apparatus, 121 - Disk, 122 - First high-reflection member, 126 - Second high-reflection member, 128 - Third high-reflection member.

Claims

1. A substrate processing apparatus, characterized in that: It includes: A substrate holder having a heat insulation region provided with a heat insulator at the lower part; A first reaction tube which houses the substrate holder inside, with openings at the upper and lower ends; A second reaction tube which is closed at the upper end and open at the lower end; A furnace port flange part which has a holding part in a first space between the first reaction tube and the second reaction tube; and A heating part which is arranged to cover the second reaction tube and heats a substrate on the substrate holder placed in the first reaction tube, This substrate processing apparatus further includes: A first high-reflection member which is arranged in the heat insulation region and has a higher infrared reflectivity than the heat insulator; and A second high-reflection member which is arranged inside the first space at the lower part of the second reaction tube and on the inner wall side of the second reaction tube, and has a higher infrared reflectivity than the heat insulator arranged in the holding part provided in the furnace port flange part.

2. The substrate processing apparatus according to claim 1, characterized in that: It further includes a third high-reflection member which is arranged in a second space formed between the heating part and the second reaction tube and has a higher infrared reflectivity than the heat insulator.

3. The substrate processing apparatus according to claim 2, characterized in that: The reflectivities of the first high-reflection member, the second high-reflection member, and the third high-reflection member are 80% or more.

4. The substrate processing apparatus according to claim 2, characterized in that: The reflectivities of the first high-reflection member, the second high-reflection member, and the third high-reflection member are the same.

5. The substrate processing apparatus according to claim 2, characterized in that: It is configured such that the reflectivities of at least one of the first high-reflection member, the second high-reflection member, and the third high-reflection member are different.

6. The substrate processing apparatus according to claim 2, characterized in that: The first high-reflection member, the second high-reflection member, and the third high-reflection member are configured to be thinner than the heat insulator.

7. The substrate processing apparatus according to claim 2, characterized in that: At least any one of the second high-reflection member and the third high-reflection member is configured to form a reflection film on the surface of the second reaction tube.

8. The substrate processing apparatus according to claim 2, characterized in that: At least any one of the second high-reflection member and the third high-reflection member is configured to be mounted on the surface of the second reaction tube.

9. The substrate processing apparatus according to claim 2, characterized in that: The uppermost end of the third high-reflection member is configured to be higher than the uppermost end of the second high-reflection member.

10. The substrate processing apparatus according to claim 2, characterized in that: At least any one of the second high-reflection member and the third high-reflection member is configured to be arranged on the lower side of the substrate processing region for holding the substrate and at a position facing the heating part.

11. The substrate processing apparatus according to claim 2, characterized in that: The first high-reflection member, the second high-reflection member, and the third high-reflection member are configured to be disposed at positions facing the heat-insulating region and positions facing the heating unit.

12. The substrate processing apparatus according to claim 1, wherein: A cooling ring is further provided between the second reaction tube and the furnace mouth flange portion.

13. The substrate processing apparatus according to claim 12, wherein: The cooling ring is disposed outside the first space.

14. The substrate processing apparatus according to claim 12, wherein: The cooling ring is disposed between the second reaction tube and the furnace mouth flange portion with a sealing member therebetween.

15. A heat-insulating member assembly, wherein: It is disposed in a processing chamber, and the processing chamber includes: A second reaction tube disposed outside a first reaction tube, and the first reaction tube houses a substrate holder having a heat-insulating region provided with a heat-insulating member; and A furnace mouth flange portion having a holding portion in a first space between the first reaction tube and the second reaction tube, The heat-insulating member assembly includes: A first high-reflection member disposed in the heat-insulating region and having a higher infrared reflectivity than the heat-insulating member; and a second high-reflection member disposed inside the second reaction tube at a lower portion thereof and on the inner wall side of the second reaction tube in the first space, and having a higher infrared reflectivity than the heat-insulating member disposed in the holding portion provided in the furnace mouth flange portion.

16. A method for manufacturing a semiconductor device, wherein: It includes the following steps: A loading step of loading, while holding a plurality of substrates, a substrate holder having a substrate processing region holding the plurality of substrates and a heat-insulating region provided with a heat-insulating member into a first reaction tube having openings at both upper and lower ends, thereby loading the substrates into a processing chamber, the processing chamber being provided below a second reaction tube having a closed upper end and an open lower end and formed inside a furnace mouth flange portion having a holding portion in a first space between the first reaction tube and the second reaction tube; and A substrate processing step of processing the substrates while heating the processing chamber, and the processing chamber includes: a first high-reflection member disposed in the heat-insulating region and having a higher infrared reflectivity than the heat-insulating member; and a second high-reflection member disposed inside the second reaction tube at a lower portion thereof and on the inner wall side of the second reaction tube in the first space, and having a higher infrared reflectivity than the heat-insulating member disposed in the holding portion provided in the furnace mouth flange portion.

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