High oxide film removal rate Shallow Trench Isolation (STI) Chemical Mechanical Planarization (CMP) polishing

Abstract

A high oxide film removal rate shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing composition, a method of using the same, and a system are provided. The CMP polishing composition comprises an abrasive of inorganic oxide particles coated with ceria, such as ceria-coated silica; and a chemical additive for providing a high oxide film removal rate. The chemical additive is a gelatin molecule having negative and positive charges on the same molecule.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This patent application claims priority to U.S. application No. 62 / 943,314 filed on December 4, 2019, the disclosure of which is incorporated herein by reference. Background of the Invention

[0004] The present invention relates to a shallow trench isolation (STI) chemical mechanical planarization (CMP) composition, method and system with high oxide film removal rate for shallow trench isolation (STI) process.

[0005] In the manufacture of microelectronic devices, an important step involved is polishing, in particular chemical mechanical polishing of surfaces for the purpose of recovering selected materials and / or planarizing structures.

[0006] In the global planarization of patterned STI structures, fast removal of bulk capping oxide films such as tetraethyl orthosilicate (TEOS) and high-density deposition chemical vapor deposition (CVD) or HDP films is a key requirement for high-throughput STI CMP processes in 3D NAND, interlayer dielectric (ILD) and STICMP processes.

[0007] U.S. Patent No. 5,876,490 discloses a polishing composition containing abrasive particles and exhibiting a normal stress effect. The slurry also contains non-polishing particles, resulting in a reduced polishing rate at recesses, while the abrasive particles maintain a high polishing rate at elevations. This results in improved planarization. More specifically, the slurry contains ceria particles and a polymer electrolyte and can be used for shallow trench isolation (STI) polishing applications.

[0008] U.S. Patent 6,964,923 teaches a polishing composition containing ceria particles and a polymer electrolyte for shallow trench isolation (STI) polishing applications. The polymer electrolyte used comprises a salt of polyacrylic acid, similar to those in U.S. Patent 5,876,490. Ceria, alumina, silica, and zirconium oxide are used as abrasives. The molecular weight of such listed polyelectrolytes ranges from 300 to 20,000, but generally, <100,000.

[0009] U.S. Patent No. 6,616,514 discloses a chemical mechanical planarization polishing slurry for removing a first substance from a surface of an article by chemical mechanical planarization polishing in preference to silicon nitride. The chemical mechanical planarization polishing slurry according to the invention comprises an abrasive, an aqueous medium and an organic polyol that does not dissociate protons, the organic polyol comprising a compound having at least three hydroxyl groups that are not dissociable in an aqueous medium, or a polymer formed from at least one monomer having at least three hydroxyl groups that are not dissociable in an aqueous medium.

[0010] U.S. Patent 6,984,588 discloses a ground ceria slurry to evaluate its ability to polish blanket silicon dioxide and nitride wafers. Rhodite grade 400HS ceria with a particle size of about 2-4 μm was purchased from Universal Photonics, Hicksville, NY and ground to a primary median particle size of 150 nm using an agitator bead mill. The grinding was done under wet conditions so that the resulting slurry (pH of about 7.5 to 8.5) contained 20% to 30% solids after the grinding process.

[0011] US Patent 6,544,892 discloses a method for removing silicon dioxide from a surface of an article in preference to silicon nitride by chemical mechanical polishing, the method comprising polishing the surface using a polishing pad, water, abrasive particles and an organic compound having a carboxylic acid functional group and a second functional group selected from amines and halides.

[0012] U.S. Pat. No. 7,247,082 discloses a polishing composition comprising an abrasive, a pH adjuster, a selectivity ratio improver and water, wherein the content of the abrasive is 0.5 to 30 wt %, the content of the pH adjuster is 0.01 to 3 wt %, the content of the selectivity ratio improver is 0.3 to 30 wt %, and the content of water is 45 to 99.49 wt %, wherein the wt % is based on the weight of the polishing composition, wherein the improver is one or more compounds selected from methylamine, ethylamine, propylamine, isopropylamine, dimethylamine, diethylamine, dipropylamine, diisopropylamine, ethylenediamine, 1,2-diaminopropane, 1,3-propylenediamine, 1,4-butylenediamine, hexamethylenediamine, N,N,N',N'-tetramethyl-1,6-diaminohexane, 6-(dimethylamino)-1-hexanol, bis(3-aminopropyl)amine, triethylenetetramine, diethylene glycol bis(3-aminopropyl) ether, piperazine and piperidine. (Note: There are four slurry claims. Claim: A polishing composition according to claim 1, wherein the modifier is one or more compounds selected from propylamine, isopropylamine, N,N,N',N'-tetramethyl-1,6-diaminohexane, 6-(dimethylamino)-1-hexanol, bis(3-aminopropyl)amine, triethylenetetramine, diethylene glycol bis(3-aminopropyl)ether and piperazine. The abrasive claimed is colloidal silica or fumed silica or a mixture.

[0013] U.S. Patent 8,778,203 discloses a method for selectively removing a target material on a surface of a substrate, the method comprising the following steps: providing a substrate comprising a target material and a non-target material; dissolving oxygen in a polishing solution to achieve a predetermined dissolved oxygen concentration, the polishing solution having a pH of about 5 to about 11, wherein the polishing solution comprises a plurality of abrasive silica particles, at least some of the plurality of abrasive silica particles being functionalized with n-(trimethoxysilylpropyl)isothiourea chloride; maintaining the predetermined dissolved oxygen concentration of the polishing solution at or between about 8.6 mg / L and about 16.6 mg / L by continuously applying substantially pure oxygen to the polishing solution; placing the polishing solution between a polishing pad and a surface; applying the polishing pad to the surface; and selectively removing a predetermined thickness of the target material; wherein changing the dissolved oxygen content of the polishing solution changes the removal ratio of the target material to the non-target material during the removing step.

[0014] U.S. Patent 6,914,001 discloses a chemical mechanical polishing method, which includes: contacting the surface of a semiconductor wafer with the surface of a polishing pad; applying an aqueous solution containing abrasive particles, a removal rate promoter, and different first and second passivating agents to the interface between the surface of the polishing pad and the surface of the semiconductor wafer, wherein the first passivating agent is an anionic, cationic or non-ionic surfactant; and rotating the surface of the semiconductor wafer relative to the surface of the polishing pad to remove oxide material on the semiconductor wafer.

[0015] However, there remains a strong need for STI CMP slurries that can provide high oxide and dielectric film removal rates by using relatively low abrasive concentrations and suitable new chemical additives that can enhance the oxide film removal rate.

[0016] Therefore, it should be readily apparent from the foregoing that there remains a need in the art for compositions, methods, and systems for STI chemical mechanical planarization (CMP) polishing that can provide high oxide film removal rates in STI CMP processes. SUMMARY OF THE INVENTION

[0018] The present invention provides STI CMP polishing compositions, methods and systems for achieving high oxide film removal rates and related CMP polishing methods.

[0019] The disclosed chemical mechanical planarization (CMP) polishing composition for shallow trench isolation (STI) CMP applications has a unique combination of inorganic oxide abrasive particles coated with ceria and gelatin molecules having negative and positive charges on the same molecule and made from natural sources or from synthetic chemistry as suitable chemical additives to enhance the oxide film removal rate.

[0020] In one aspect, a STI CMP polishing composition is provided, comprising:

[0021] Ceria-coated inorganic oxide particles;

[0022] Gelatin molecules with negative and positive charges on the same molecule;

[0023] A water-miscible solvent; and

[0024] Optionally

[0025] Biocides; and

[0026] pH adjusters;

[0027] Wherein the pH of the composition is from 2 to 12, preferably from 3 to 10, more preferably from 4 to 9, and most preferably from 4.5 to 7.5.

[0028] The ceria-coated inorganic oxide particles include, but are not limited to, ceria-coated colloidal silica, ceria-coated high purity colloidal silica, ceria-coated alumina, ceria-coated titania, ceria-coated zirconia, or any other ceria-coated inorganic metal oxide particles.

[0029] Water-soluble solvents include, but are not limited to, deionized (DI) water, distilled water, and alcoholic organic solvents.

[0030] The gelatin molecules act as oxide film removal rate accelerators.

[0031] Gelatin molecules can be organic or inorganic and made from natural sources or synthetic chemistry, with both negative and positive charges on the same molecule.

[0032] For example, gelatin made from animal skins, such as cold water fish skin, pig skin, and cow skin, has been considered and used as a gelatin molecule in STI CMP polishing compositions.

[0033] In another aspect, a method of chemically mechanically planarizing (CMP) a substrate having at least one surface including a silicon dioxide film in a shallow trench isolation (STI) process using the above-mentioned STI CMP polishing composition is provided.

[0034] In another aspect, a system for chemically mechanically polishing (CMP) a substrate having at least one surface including a silicon dioxide film in a shallow trench isolation (STI) process using the above-mentioned STI CMP polishing composition is provided.

[0035] The oxide film to be polished may be a silicon dioxide film formed by chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), or high density deposition CVD (HDP), or a spin-coated silicon dioxide film.

[0036] The substrate disclosed above may also include a silicon nitride surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 Using gelatin made from cold water fish skin, the oxide film was subjected to 3.0 psi down force (DF). removal effect.

[0039] Figure 2 Gelatin made from cold water fish skin was used to treat oxide and SiN films at 3.0 psi down force (DF). removal effect.

[0040] Figure 3 Gelatin made from fish skin at 4.0 psi downforce (DF) on oxide and SiN membranes impact. DETAILED DESCRIPTION OF THE INVENTION

[0042] Rapid removal of the oxide capping layer at a high oxide film removal rate is a key factor to be considered in the global planarization of patterned STI structures. Therefore, it is important to have a STI CMP polishing composition that can provide a high oxide film removal rate when used to effectively remove the oxide capping layer.

[0043] The present invention relates to chemical mechanical polishing (CMP) compositions for shallow trench isolation (STI) CMP applications.

[0044] More specifically, the disclosed chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) CMP applications has a unique combination of using ceria-coated inorganic oxide abrasive particles and suitable chemical additives as oxide film removal rate enhancers.

[0045] Suitable chemical additives include, but are not limited to, gelatin molecules having negative and positive charges on the same molecule and made from natural sources, synthetic chemistry, and combinations thereof.

[0046] The use of gelatin molecules as chemical additives in the STI CMP polishing composition of the present invention provides the benefit of achieving high oxide film removal rates, which is very useful for VNAND, ILD and STI CMP applications that require high oxide film removal rates for high throughput device manufacturing.

[0047] In one aspect, a STI CMP polishing composition is provided, comprising:

[0048] Ceria-coated inorganic oxide particles;

[0049] Gelatin molecules with positive and negative charges on the same molecule;

[0050] A water-miscible solvent; and

[0051] Optionally

[0052] Biocides; and

[0053] pH adjusters;

[0054] Wherein the pH of the composition is from 2 to 12, preferably from 3 to 10, more preferably from 4 to 9, and most preferably from 4.5 to 7.5.

[0055] Ceria-coated inorganic oxide particles include, but are not limited to, ceria-coated colloidal silica, ceria-coated high purity colloidal silica, ceria-coated alumina, ceria-coated titania, ceria-coated zirconia, or any other ceria-coated metal oxide particles.

[0056] The average particle size (MPS) of the cerium oxide coated inorganic oxide particles in the invention disclosed herein ranges from 10 nm to 1,000 nm, 20 nm to 500 nm, 30 nm to 400 nm, 50 nm to 250 nm, or 100 nm to 200 nm. MPS refers to the diameter of the particles and is measured using a dynamic light scattering (DLS) technique.

[0057] The concentration of these ceria-coated inorganic oxide particles ranges from 0.01 wt % to 20 wt %, 0.02 wt % to 10 wt %, 0.005 wt % to 5 wt %, or 0.01 wt % to 3 wt %.

[0058] Preferred ceria-coated inorganic oxide particles are ceria-coated colloidal silica particles.

[0059] Gelatin chemical additives contain gelatin molecules with negative and positive charges on the same molecule.

[0060] Gelatin molecules can be organic or inorganic and made from natural sources or synthetic chemistry, carrying both negative and positive charges on the same molecule.

[0061] For example, gelatin molecules contain organic carboxylate functional groups that provide negative charges and protonated organic amino groups that provide positive charges. In addition, gelatin molecules can also contain organic amide functional groups, 5-membered non-aromatic rings with one nitrogen atom as a heteroatom.

[0062] For example, organic gelatin molecules are made from animal skins, such as cold-water fish skin, pig skin, and cow skin.

[0063] Gelatin from cold water fish skin (G7041), bovine hide (G9381, G9382, G6650), and pig hide (G1890) can be purchased from Sigma-Aldrich, St. Louis, MO.

[0064] For example, the molecular structure of gelatin made from cold-water fish skin is shown below:

[0065]

[0066] Water-soluble solvents include, but are not limited to, deionized (DI) water, distilled water, and alcoholic organic solvents.

[0067] The concentration of gelatin ranges from 0.0001 wt % to 5 wt %, 0.0005 wt % to 2 wt %, 0.001 wt % to 1 wt %, 0.002 wt % to 0.5 wt %, 0.0025 wt % to 0.25 wt %, or 0.003 wt % to 0.1 wt %.

[0068] The preferred water-soluble solvent is deionized water.

[0069] The STI CMP composition may contain 0.0001 wt % to 0.05 wt %; 0.0005 wt % to 0.025 wt % or 0.001 wt % to 0.01 wt % of the biocide.

[0070] Biocides include, but are not limited to, Kathon from Dupont / Dow Chemical Co. TM Kathon TM CG / ICP II, Bioban from Dupont / Dow Chemical Co. They have the active ingredients 5-chloro-2-methyl-4-isothiazolin-3-one and 2-methyl-4-isothiazolin-3-one.

[0071] The STI CMP composition may include a pH adjuster.

[0072] Acidic or basic pH adjusters can be used to adjust the STI polishing composition to an optimized pH value.

[0073] pH adjusters include, but are not limited to, nitric acid, hydrochloric acid, sulfuric acid, phosphoric acid, other inorganic or organic acids, and mixtures thereof.

[0074] pH adjusters also include alkaline pH adjusters such as sodium hydroxide, potassium hydroxide, ammonium hydroxide, tetraalkylammonium hydroxides, organic quaternary ammonium hydroxides, organic amines, and other chemical agents that can be used to adjust the pH toward a more alkaline direction.

[0075] The STI CMP composition contains 0 wt % to 1 wt %; 0.01 wt % to 0.5 wt %; or 0.1 wt % to 0.25 wt % of a pH adjuster.

[0076] In another aspect, a method of chemically mechanically planarizing (CMP) a substrate having at least one surface including a silicon dioxide film in a shallow trench isolation (STI) process using the above-mentioned STI CMP polishing composition is provided.

[0077] In another aspect, a system for chemically mechanically polishing (CMP) a substrate having at least one surface including a silicon dioxide film in a shallow trench isolation (STI) process using the above-mentioned STI CMP polishing composition is provided.

[0078] The polished silicon dioxide film can be formed by chemical vapor deposition (CVD), called CVD silicon dioxide film; formed by plasma enhanced CVD (PECVD), called PECVD silicon dioxide film; formed by high density deposition CVD (HDP), called high density silicon dioxide film; or formed by spin coating, called spin coated silicon dioxide film.

[0079] The substrate disclosed above may also include a silicon nitride surface.

[0080] In another aspect, a method for chemical mechanical planarization (CMP) of a substrate having at least one surface containing a silicon dioxide film using the above-mentioned STI CMP polishing composition in a shallow trench isolation (STI) process is provided. The silicon dioxide film to be polished can be CVD silicon dioxide, PECVD silicon dioxide, high-density silicon dioxide or spin-on silicon dioxide film.

[0081] The following non-limiting examples are presented to further illustrate the present invention.

[0082] CMP Method

[0083] In the examples given below, CMP experiments were carried out using the procedures and experimental conditions given below.

[0084] parameter

[0085] or A: Angstrom-unit of length

[0086] BP: Back pressure, in psi

[0087] CMP: Chemical Mechanical Planarization or Chemical Mechanical Polishing

[0088] CS: Carrier speed

[0089] DF: Downforce: The pressure applied during CMP, in psi

[0090] min: minutes

[0091] ml: milliliters

[0092] mV: millivolt

[0093] psi: pounds per square inch

[0094] PS: The platen rotation speed of the polishing equipment, measured in rpm (revolutions per minute)

[0095] SF: combined flow, ml / min

[0096] Weight %: weight percentage (of listed components)

[0097] HDP: TEOS deposited by high density plasma

[0098] TEOS: Tetraethyl orthosilicate

[0099] TEOS or HDP Removal Rate: TEOS or HDP removal rate measured at a given downforce. In the examples listed below, the downforce of the CMP apparatus was 3.0 or 4.0 psi.

[0100] SiN removal rate: SiN removal rate measured at a given down pressure. In the examples listed, the down pressure of the CMP apparatus was 3.0 psi or 4.0 psi.

[0101] Polishing experiment

[0102] The CMP equipment used was a 200 mm Mirra or 300 mm Reflexion manufactured by Applied Materials, 3050 Bowers Avenue, Santa Clara, California, 95054. An IC1000 pad supplied by DOW, Inc, 451 Bellevue Rd., Newark, DE 19713 was used on platen 1 for blanket and patterned wafer studies.

[0103] Polishing pad: Polishing pad used during CMP, IC1010, IC1000 and other pads, provided by DOW, Inc.

[0104] IC1010 pads or other pads provided by DOW, Inc. were worn in by conditioning the pads at 7 pounds down force on the conditioner for 18 minutes. To qualify the equipment setup and pad wear-in, two tungsten monitors and two TEOS monitors were placed under baseline conditions using a 30-well pad provided by Versum Materials Inc. STI2305 composition was used for polishing.

[0105] Ceria-coated silica particles (with different sizes) were provided by JGC C&CLtd., Japan. The particles were prepared by the methods described in JP2013119131, JP2013133255, and WO2016159167; the properties of the particles are also described in US20160200944A1; these disclosures are incorporated herein by reference.

[0106] The MPS of the ceria-coated silica composite particles used in the examples is about 110 nm to about 125 nm. The ceria nanoparticles coated on the surface of the colloidal silica particles are >10 nm or >13 nm.

[0107] Gelatin made from cold water fish skin (G7041) was provided by Sigma-Aldrich, St. Louis, MO.

[0108] In the blanket wafer study, oxide blanket wafers and SiN blanket wafers were polished under baseline conditions. The equipment baseline conditions were: table speed: 87 rpm, head speed: 93 rpm, film pressure: 3.0 psi DF or 4.0 psi DF, combination flow: 200 ml / min. The polishing pad used for the test was an IC1010 pad provided by Dow Chemicals.

[0109] Polishing experiments were performed using PECVD or LECVD or HD TEOS wafers. These blanket wafers were purchased from Silicon Valley Microelectronics, 2985 Kifer Rd., Santa Clara, CA 95051.

[0110] Deionized water was used as a solvent in the compositions of the working examples.

[0111] The composition was used in polishing experiments on patterned wafers (MIT860) provided by SWK Associates, Inc. 2920 Scott Blvd. Santa Clara, CA 95054. These wafers were measured on a Veeco VX300 profiler / AFM instrument. Three different sized spacing structures were used for oxide recess measurements. The wafers were measured at the center, middle, and edge die locations.

[0112] Working Example

[0113] Example 1

[0114] In Example 1, the polishing composition used for oxide polishing is shown in Table 1.

[0115] Reference samples were made by using 0.2 wt% ceria coated silica particles plus very low concentrations of biocide ranging from 0.0001 wt% to 0.05 wt% and deionized water with a final pH of 5.35.

[0116] A polishing composition was prepared by adding 0.0083 wt % (or 83 ppm) of gelatin made from cold water fish skin to the reference sample, with a final pH of 5.35.

[0117] The polishing step conditions used were Dow's IC1010 pad at 3.0 psi DF, table / head speeds of 87 / 93 rpm, and ex-situ conditioning.

[0118] The removal rates (RR, in The effects of chemical additive gelatin made from cold water fish skin on membrane removal rates were observed and are listed in Table 1 and described in Figure 1 middle.

[0119] Table 1. Gelatin films made from cold water fish skin Impact

[0120]

[0121] As shown in Table 1 and Figure 1 The results show that adding 0.0083 wt% of gelatin made from cold water fish skin to the polishing composition effectively increases the removal rates of TEOS, HDP and SiN films. Respectively, the TEOS film removal rate increases by 60%, the HDP film removal rate increases by 134%, and the PECVD film removal rate increases by 246%.

[0122] Example 2

[0123] In Example 2, the polishing composition used for polishing is shown in Table 2.

[0124] Reference samples were made by using 1.0 wt % of ceria coated silica particles plus very low concentrations of biocide ranging from 0.0001 wt % to 0.05 wt % and deionized water.

[0125] Polishing compositions were prepared by adding different concentrations of 0.0083 wt % (83 ppm), 0.0415 wt % (415 ppm), or 0.083 wt % (830 ppm) of gelatin made from cold water fish skin to the reference sample, respectively.

[0126] The reference sample and the polishing composition had the same pH value, approximately 7.0.

[0127] The effects of gelatin made from cold water fish skin on the removal rates of oxide and SiN films were tested at 3.0 psi DF and the results are listed in Table 2 and described in Figure 2 middle.

[0128] Table 2. Effect of gelatin made from fish skin on oxide and silicon nitride films

[0129]

[0130] As shown in Table 2 and Figure 2 The results show that adding gelatin made from cold water fish skin as a chemical additive in the polishing composition at different concentrations improves the oxide and SiN film removal rates at a pH of about 7.0. With 0.0415 wt % gelatin made from cold water fish skin as a chemical additive, the TEOS film removal rate is increased by >70% and the SiN film removal rate is increased by >500% at 3.0 spi DF.

[0131] Example 3

[0132] In Example 3, the reference sample and the polishing composition were the same as those used in Example 2.

[0133] The effect of gelatin made from cold water fish skin on the removal rate of oxide and SiN films was tested at 4.0 psi DF and the results are listed in Table 3 and described in Figure 3 middle.

[0134] Table 3. Effect of fish skin gelatin on oxide and silicon nitride films

[0135]

[0136]

[0137] As shown in Table 3 and Figure 3As shown in the results, adding different concentrations of gelatin made from cold water fish skin as a chemical additive in the polishing composition increased the oxide and SiN film removal rates at a pH of about 7.0. Using 0.0415 wt % gelatin made from cold water fish skin as a chemical additive, the TEOS film removal rate was increased by >70% and the SiN film removal rate was increased by >170% at 4.0 psi DF.

[0138] The embodiments of the invention listed above, including the working examples, are examples of the many embodiments that can be made by the invention. It is contemplated that many other configurations of the process can be used, and the materials used in the process can be selected from many materials other than those specifically disclosed.

Claims

1. A chemical mechanical planarization polishing composition comprising: Ceria-coated inorganic oxide particles; a gelatin molecule that contains an organic carboxylate functional group providing a negative charge and a protonated organic amino group providing a positive charge on the same molecule; A water-miscible solvent; and Optionally Biocides; and pH adjusters; in The composition has a pH of 2 to 12; and The concentration of the gelatin molecules is 0.0415 wt % to 0.25 wt %.

2. The chemical mechanical planarization polishing composition according to claim 1, wherein the pH value of the composition is 3 to 10.

3. The chemical mechanical planarization polishing composition according to claim 1, wherein the pH value of the composition is 4 to 9.

4. The chemical mechanical planarization polishing composition of claim 1, wherein the pH value of the composition is 4.5 to 7.

5.

5. The chemical mechanical planarization polishing composition according to claim 1, wherein The ceria-coated inorganic oxide particles are selected from the group consisting of ceria-coated colloidal silica, ceria-coated alumina, ceria-coated titania, ceria-coated zirconia particles, and combinations thereof.

6. The chemical mechanical planarization polishing composition of claim 1, wherein the concentration of the ceria-coated inorganic oxide particles is 0.01 wt% to 20 wt%.

7. The chemical mechanical planarization polishing composition of claim 1, wherein the concentration of the ceria-coated inorganic oxide particles is 0.02 wt% to 10 wt%.

8. The chemical mechanical planarization polishing composition of claim 1, wherein the concentration of the ceria-coated inorganic oxide particles is 0.005 wt% to 5 wt%.

9. The chemical mechanical planarization polishing composition of claim 1, wherein the concentration of the ceria-coated inorganic oxide particles is 0.01 wt% to 3 wt%.

10. The chemical mechanical planarization polishing composition of claim 1, wherein the gelatin molecule further comprises an organic amide functional group, and a 5-membered non-aromatic ring having a nitrogen atom as a heteroatom.

11. The chemical mechanical planarization polishing composition of claim 1, wherein the gelatin molecules are organic gelatin molecules made from animal skin.

12. The chemical mechanical planarization polishing composition of claim 1, wherein the gelatin molecules are organic gelatin molecules made from animal skin selected from the group consisting of cold water fish skin, pig skin, cow skin, and combinations thereof.

13. The chemical mechanical planarization polishing composition according to claim 1, wherein the gelatin molecule has the following molecular structure:

14. The chemical mechanical planarization polishing composition of claim 1, wherein the concentration of the gelatin molecules is 0.0415 wt% to 0.1 wt%.

15. The chemical mechanical planarization polishing composition of claim 1, wherein the concentration of the gelatin molecules is 0.0415 wt% to 0.083 wt%.

16. The chemical mechanical planarization polishing composition of claim 1, wherein the concentration of the gelatin molecules is 0.083 wt% to 0.25 wt%.

17. The chemical mechanical planarization polishing composition of claim 1, wherein the concentration of the gelatin molecules is 0.083 wt% to 0.1 wt%.

18. The chemical mechanical planarization polishing composition of claim 1, wherein the concentration of the gelatin molecules is 0.1 wt% to 0.25 wt%.

19. The chemical mechanical planarization polishing composition of claim 1, wherein the water-soluble solvent is selected from deionized (DI) water, distilled water, and alcohol organic solvents.

20. The chemical mechanical planarization polishing composition of claim 1, wherein the composition further comprises a biocide at a concentration of 0.0001 wt. % to 0.05 wt. %.

21. The chemical mechanical planarization polishing composition of claim 1, wherein the composition further comprises a biocide at a concentration of 0.0005 wt. % to 0.025 wt. %.

22. The chemical mechanical planarization polishing composition of claim 1, wherein the composition further comprises a biocide at a concentration of 0.001 wt. % to 0.01 wt. %.

23. The chemical mechanical planarization polishing composition of claim 1, wherein the composition further comprises a biocide having an active ingredient of 5-chloro-2-methyl-4-isothiazolin-3-one or 2-methyl-4-isothiazolin-3-one.

24. The chemical mechanical planarization polishing composition of claim 1, wherein the composition further comprises a pH adjuster at a concentration of 0 wt% to 1 wt%.

25. The chemical mechanical planarization polishing composition of claim 1, wherein the composition further comprises a pH adjuster at a concentration of 0.01 wt% to 0.5 wt%.

26. The chemical mechanical planarization polishing composition of claim 1, wherein the composition further comprises a pH adjuster at a concentration of 0.1 wt% to 0.25 wt%.

27. The chemical mechanical planarization polishing composition according to claim 1, wherein the composition further comprises a pH adjuster selected from nitric acid, hydrochloric acid, sulfuric acid, phosphoric acid and mixtures thereof for acidic pH conditions; or selected from sodium hydroxide, potassium hydroxide, ammonium hydroxide, tetraalkylammonium hydroxide, organic quaternary ammonium hydroxide for alkaline pH conditions. Oxides, organic amines and combinations thereof.

28. The chemical mechanical planarization polishing composition of claim 1, wherein the composition comprises ceria-coated colloidal silica particles as the ceria-coated inorganic oxide particles, and gelatin molecules made from an animal skin selected from the group consisting of cold water fish skin, pig skin, cow skin, and combinations thereof.

29. The chemical mechanical planarization polishing composition of claim 1, wherein the composition comprises ceria-coated colloidal silica particles as the ceria-coated inorganic oxide particles, and gelatin molecules made from animal skins selected from cold water fish skin, pig skin, cow skin, and combinations thereof; and the pH value of the chemical mechanical planarization polishing composition is 4 to 9.

30. The chemical mechanical planarization polishing composition of claim 1, wherein the composition comprises ceria-coated colloidal silica particles as the ceria-coated inorganic oxide particles, and gelatin molecules made from cold water fish skin.

31. The chemical mechanical planarization polishing composition of claim 1, wherein the composition comprises ceria-coated colloidal silica particles as the ceria-coated inorganic oxide particles, and gelatin molecules made from cold-water fish skin, and the pH value of the chemical mechanical planarization polishing composition is 4 to 9.

32. A method of chemical mechanical planarization (CMP) of a semiconductor substrate having at least one surface comprising a silicon dioxide film, the method comprising: providing the semiconductor substrate; Provide polishing pads; Providing a chemical mechanical planarization polishing composition as described in any one of claims 1 to 31; contacting the semiconductor substrate with the polishing pad and the chemical mechanical polishing composition; and The at least one surface comprising the silicon dioxide film is polished.

33. The method of claim 32, wherein the silicon dioxide film is selected from the group consisting of a chemical vapor deposition (CVD) silicon dioxide film, a plasma enhanced CVD (PECVD) silicon dioxide film, a high density deposition CVD (HDP) silicon dioxide film, a spin-on silicon dioxide film, and combinations thereof.

34. The method of claim 32, wherein the semiconductor substrate further has at least one surface including a silicon nitride film.

35. The method of claim 32, wherein the semiconductor substrate further has at least one surface including a silicon nitride film, and a ratio of a polishing rate of the silicon dioxide film to a polishing rate of the silicon nitride film is ≥1.

36. A system for chemical mechanical polishing (CMP) of a semiconductor substrate having at least one surface comprising a silicon dioxide film, the system comprising: a. the semiconductor substrate; b. A chemical mechanical planarization polishing composition as claimed in any one of claims 1 to 31; and c. Polishing pad; The at least one surface comprising a silicon dioxide film is in contact with the polishing pad and the chemical mechanical polishing composition.

37. The system of claim 36, wherein the silicon dioxide film is selected from a chemical vapor deposition (CVD) silicon dioxide film, a plasma enhanced CVD (PECVD) silicon dioxide film, a high density deposition CVD (HDP) silicon dioxide film, or a spin-on silicon dioxide film.

38. The system of claim 36, wherein the semiconductor substrate further has at least one surface comprising a silicon nitride film.

39. The system of claim 36, wherein the semiconductor substrate further has at least one surface including a silicon nitride film, and a ratio of a polishing rate of the silicon dioxide film to a polishing rate of the silicon nitride film is ≥1.

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