A temperature compensation device, system and method for a reaction chamber

Abstract

This application relates to the technical field of epitaxial equipment, and specifically provides a temperature compensation device, system and method for a reaction chamber. The epitaxial equipment includes the reaction chamber and an induction coil, the induction coil is spirally arranged outside the reaction chamber, the outer shape of the reaction chamber is cylindrical, and the temperature compensation device of the reaction chamber includes: a temperature compensation coil arranged outside the reaction chamber; a horizontal driving component connected to the temperature compensation coil for driving the temperature compensation coil to displace along a direction parallel to the axis of the reaction chamber; a rotating component connected to the horizontal driving component for driving the horizontal driving component to rotate; this device can perform compensating heating on local positions corresponding to uneven temperature field distribution so as to make the temperature field distribution in the reaction chamber uniform.

Description

Technical Field

[0001] The present application relates to the technical field of epitaxial equipment, and in particular, to a temperature compensation device, system and method for a reaction chamber. Background Art

[0002] Silicon carbide (SiC) epitaxial equipment is a core process equipment in the third-generation semiconductor technology. The SiC epitaxial equipment is used to epitaxially grow a layer of high-quality silicon carbide thin film on the surface of a substrate. Whether the temperature field distribution in the reaction chamber of the epitaxial equipment is uniform affects the quality of the epitaxial growth process. The existing SiC epitaxial equipment places the entire reaction chamber inside an induction coil, and the induction coil heats the reaction chamber by generating eddy currents through high-frequency alternating current. When the local temperature field distribution in the reaction chamber is uneven during the heating process of the SiC epitaxial equipment, since the heating object of the induction coil is the entire reaction chamber, the induction coil cannot perform compensation heating on the local position with uneven temperature field distribution. That is, the existing SiC epitaxial equipment cannot adjust the temperature field distribution in the reaction chamber to be uniform when the local temperature field distribution is uneven.

[0003] In view of the above problems, there is currently no effective technical solution. Summary of the Invention

[0004] The purpose of the present application is to provide a temperature compensation device, system and method for a reaction chamber, which can perform compensation heating on the local position corresponding to the uneven temperature field distribution, so as to make the temperature field distribution in the reaction chamber uniform.

[0005] In a first aspect, the present application provides a temperature compensation device for a reaction chamber, which is used to compensate the temperature in the reaction chamber of an epitaxial equipment. The above epitaxial equipment includes the above reaction chamber and an induction coil. The above induction coil is spirally arranged outside the above reaction chamber. The outer shape of the above reaction chamber is cylindrical. The temperature compensation device for the reaction chamber includes:

[0006] A temperature compensation coil, arranged outside the above reaction chamber;

[0007] A horizontal driving component, connected to the above temperature compensation coil, and used to drive the above temperature compensation coil to displace along a direction parallel to the axis of the above reaction chamber;

[0008] A rotating component, connected to the above horizontal driving component, and used to drive the above horizontal driving component to rotate.

[0009] The temperature compensation device for a reaction chamber provided by the present application first moves the temperature compensation coil to the local position corresponding to the uneven temperature field distribution through the horizontal driving component and the rotating component, and then performs compensation heating on the reaction chamber through the temperature compensation coil, so as to realize compensation heating on the local position corresponding to the uneven temperature field distribution, and make the temperature field distribution in the reaction chamber uniform.

[0010] Optionally, the above temperature compensation coil is a planar coil.

[0011] Optionally, the above reaction chamber includes an upper half reaction chamber body and a lower half reaction chamber body. The two sides of the above upper half reaction chamber body are connected to the above lower half reaction chamber body through side wall support members. The above rotation assembly is used to drive the above horizontal drive assembly to rotate within the outer range of the above upper half reaction chamber body or within the outer range of the above lower half reaction chamber body.

[0012] In a second aspect, the present application further provides a temperature compensation system for a reaction chamber, which is used to compensate the temperature inside the reaction chamber of an epitaxial device. The above epitaxial device includes the above reaction chamber and an induction coil. The above induction coil is spirally arranged outside the above reaction chamber. The outer shape of the above reaction chamber is cylindrical. The temperature compensation system for the above reaction chamber includes:

[0013] A temperature compensation device, which includes a temperature compensation coil, a horizontal drive assembly, and a rotation assembly. The above temperature compensation coil is arranged outside the above reaction chamber. The above horizontal drive assembly is connected to the above temperature compensation coil. The above horizontal drive assembly is used to drive the above temperature compensation coil to displace along a direction parallel to the axis of the above reaction chamber. The above rotation assembly is connected to the above horizontal drive assembly. The above rotation assembly is used to drive the above horizontal drive assembly to rotate;

[0014] A temperature field detection assembly, which is used to detect the temperature field information inside the above reaction chamber;

[0015] A controller, which is electrically connected to the above induction coil, the above temperature compensation coil, the horizontal drive assembly, the above rotation assembly, and the above temperature field detection assembly;

[0016] The above controller is used to obtain the position information of the temperature abnormal point according to the above temperature field information;

[0017] The above controller is further used to control the above horizontal drive assembly and the above rotation assembly to drive the above temperature compensation coil to move to perform compensation heating on the above reaction chamber according to the above position information, so as to make the distribution of the above temperature field information uniform.

[0018] The temperature compensation system for a reaction chamber provided by the present application first obtains the position information of the temperature abnormal point according to the temperature field information detected by the temperature field detection assembly, and then controls the horizontal drive assembly and the rotation assembly to move the temperature compensation coil and controls the temperature compensation coil to perform compensation heating according to the position information, so as to automatically perform compensation heating on the local position corresponding to the uneven temperature field distribution, so as to make the temperature field distribution inside the reaction chamber uniform.

[0019] Optionally, the temperature anomaly point is a low-temperature point. The control process in which the controller controls the horizontal drive assembly and the rotating assembly to drive the temperature compensation coil to move to compensate for the heating of the reaction chamber according to the position information so that the temperature field information is evenly distributed includes:

[0020] Controlling the horizontal drive assembly and the rotating assembly to drive the temperature compensation coil to move according to the position information so that the temperature compensation coil moves to the position corresponding to the position information;

[0021] Controlling the temperature compensation coil to perform compensation heating on the reaction chamber so that the temperature field information is evenly distributed.

[0022] Optionally, the temperature anomaly point is a high-temperature point. The control process in which the controller controls the horizontal drive assembly and the rotating assembly to drive the temperature compensation coil to move to compensate for the heating of the reaction chamber according to the position information so that the temperature field information is evenly distributed includes:

[0023] Controlling the horizontal drive assembly and the rotating assembly to drive the temperature compensation coil to move according to the position information so that the temperature compensation coil moves to a position other than the position corresponding to the position information;

[0024] Controlling the temperature compensation coil to perform compensation heating on the reaction chamber so that the temperature field information is evenly distributed.

[0025] Optionally, before controlling the temperature compensation coil to perform compensation heating on the reaction chamber so that the temperature information is evenly distributed, the controller is further configured to control the induction coil to stop heating.

[0026] In this technical solution, the controller first controls the induction coil to stop heating, and then controls the temperature compensation coil to perform compensation heating on the reaction chamber to avoid the eddy current generated by the induction coil interfering with the eddy current generated by the temperature compensation coil.

[0027] Optionally, the control process in which the controller obtains the position information of the temperature anomaly point according to the temperature field information includes:

[0028] Detecting whether there is a temperature anomaly point in the reaction chamber according to the temperature field information;

[0029] If there is a temperature anomaly point, obtaining the position information of the temperature anomaly point according to the temperature field information.

[0030] Optionally, the temperature field detection component includes an infrared pyrometer. An observation hole is penetrated through the cavity of the reaction chamber. The infrared pyrometer is used to detect the temperature distribution in the reaction chamber through the observation hole, and the controller is electrically connected to the infrared pyrometer.

[0031] In a third aspect, the present application also provides a temperature compensation method for a reaction chamber, which is used to compensate the temperature in the reaction chamber of an epitaxial device. The above-mentioned epitaxial device includes the above-mentioned reaction chamber and an induction coil, and the above-mentioned induction coil is spirally arranged outside the above-mentioned reaction chamber. The outer shape of the above-mentioned reaction chamber is cylindrical. Applied in the temperature compensation system of the reaction chamber, the above-mentioned temperature compensation system of the reaction chamber includes a temperature compensation device and a temperature field detection component. The above-mentioned temperature compensation device includes a temperature compensation coil, a horizontal driving component and a rotating component. The above-mentioned temperature compensation coil is arranged outside the above-mentioned reaction chamber. The above-mentioned horizontal driving component is connected to the above-mentioned temperature compensation coil. The above-mentioned horizontal driving component is used to drive the above-mentioned temperature compensation coil to displace along a direction parallel to the axis of the above-mentioned reaction chamber. The above-mentioned rotating component is connected to the above-mentioned horizontal driving component. The above-mentioned rotating component is used to drive the above-mentioned horizontal driving component to rotate. The above-mentioned temperature field detection component is used to detect the temperature field information in the above-mentioned reaction chamber. The temperature compensation method for the above-mentioned reaction chamber includes the following steps:

[0032] Obtain the position information of the temperature anomaly point according to the above-mentioned temperature field information;

[0033] Control the above-mentioned horizontal driving component and the above-mentioned rotating component to drive the above-mentioned temperature compensation coil to move to compensate and heat the above-mentioned reaction chamber according to the above-mentioned position information, so that the above-mentioned temperature field information is evenly distributed.

[0034] A temperature compensation method for a reaction chamber provided by the present application first obtains the position information of the temperature anomaly point according to the temperature field information detected by the temperature field detection component, and then controls the horizontal driving component and the rotating component to move the temperature compensation coil according to the position information and control the temperature compensation coil to perform compensation heating, so as to automatically compensate and heat the local position corresponding to the uneven temperature field distribution, so that the temperature field distribution in the reaction chamber is uniform.

[0035] As can be seen from the above, a temperature compensation device, system and method for a reaction chamber provided by the present application first move the temperature compensation coil to the local position corresponding to the uneven temperature field distribution through the horizontal driving component and the rotating component, and then perform compensation heating on the reaction chamber through the temperature compensation coil, so as to realize compensation heating on the local position corresponding to the uneven temperature field distribution, so that the temperature field distribution in the reaction chamber is uniform.

[0036] Other features and advantages of the present application will be described in the subsequent specification, and part of them will become obvious from the specification, or be understood by implementing the embodiments of the present application. The objectives and other advantages of the present application can be achieved and obtained through the structures specifically pointed out in the written specification and the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 It is a schematic structural diagram of a temperature compensation device for a reaction chamber provided by an embodiment of the present application.

[0038] Figure 2 A schematic side view structure diagram of a reaction chamber, an induction coil, and a temperature compensation coil provided by an embodiment of the present application.

[0039] Figure 3 A schematic control structure diagram of a temperature compensation system for a reaction chamber provided by an embodiment of the present application.

[0040] Figure 4 A schematic structure diagram of a temperature compensation system for a reaction chamber provided by an embodiment of the present application.

[0041] Figure 5 A flowchart of a temperature compensation method for a reaction chamber provided by an embodiment of the present application.

[0042] Reference numerals: 1, reaction chamber; 11, upper half-moon reaction cavity; 12, lower half-moon reaction cavity; 13, side wall support member; 2, induction coil; 3, horizontal drive assembly; 31, first motor; 32, lead screw; 33, nut; 4, rotation assembly; 41, second motor; 42, connecting rod; 5, temperature compensation coil; 6, wafer; 7, temperature field detection assembly; 8, controller; 9, observation hole. Detailed implementation manners

[0043] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Usually, the components of the embodiments of the present application described and shown in the accompanying drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application to be protected, but only represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application.

[0044] It should be noted that similar reference numerals and letters represent similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. At the same time, in the description of the present application, the terms "first", "second", etc. are only used for distinguishing descriptions and cannot be understood as indicating or implying relative importance.

[0045] Silicon carbide (SiC) epitaxial equipment is the core process equipment in third-generation semiconductor technology. The SiC epitaxial equipment is used to epitaxially grow a high-quality silicon carbide thin film on the surface of a substrate. The parameters such as the epitaxial growth rate and film thickness at different positions are related to the temperature at that place. Therefore, whether the temperature field distribution in the reaction chamber of the epitaxial equipment is uniform affects the quality of the epitaxial growth process. The existing SiC epitaxial equipment places the entire reaction chamber inside an induction coil, and the induction coil heats the reaction chamber by generating eddy currents through high-frequency alternating current. When there is an uneven local temperature field distribution in the reaction chamber during the heating process of the SiC epitaxial equipment, since the heating object of the induction coil is the entire reaction chamber, the induction coil cannot perform compensating heating on the local position with uneven temperature field distribution. That is, the existing SiC epitaxial equipment cannot adjust the temperature field distribution in the reaction chamber to be uniform when the local temperature field distribution is uneven, thus affecting the quality of the epitaxial growth process.

[0046] In a first aspect, as Figure 1 - Figure 2 shown, the present application provides a temperature compensation device for the reaction chamber, which is used to compensate the temperature in the reaction chamber 1 of the epitaxial equipment. The epitaxial equipment includes a reaction chamber 1 and an induction coil 2. The induction coil 2 is spirally arranged outside the reaction chamber 1. The outer shape of the reaction chamber 1 is cylindrical. The temperature compensation device for the reaction chamber includes:

[0047] A temperature compensation coil 5, arranged outside the reaction chamber 1;

[0048] A horizontal driving component 3, connected to the temperature compensation coil 5, and used to drive the temperature compensation coil 5 to displace along a direction parallel to the axis of the reaction chamber 1;

[0049] A rotating component 4, connected to the horizontal driving component 3, and used to drive the horizontal driving component 3 to rotate.

[0050] Among them, the epitaxial device includes a reaction chamber 1 and an induction coil 2. The induction coil 2 is spirally arranged outside the reaction chamber 1. The induction coil 2 is used to heat the entire reaction chamber 1. The wafer 6 is placed inside the reaction chamber 1. Preferably, the wafer 6 is horizontally placed in the middle of the reaction chamber 1. After the temperature inside the reaction chamber 1 reaches the temperature required for epitaxial growth and there is a reaction gas required for epitaxial growth inside the reaction chamber 1, the epitaxial device performs an epitaxial growth process. The reaction gas undergoes a chemical reaction and deposits a corresponding thin film on the wafer 6. The temperature compensation coil 5 can be a planar coil, an arc-shaped coil, etc. The temperature compensation coil 5 is preferably a planar coil. The temperature compensation coil 5 can be arranged outside the induction coil 2 or between the induction coil 2 and the reaction chamber 1. The temperature compensation coil 5 is preferably arranged between the induction coil 2 and the reaction chamber 1. The temperature compensation coil 5 is used to perform compensation heating on a local position of the reaction chamber 1. The horizontal drive assembly 3 is a linear drive assembly, such as a cylinder, an oil cylinder, an electric linear module, and an electric slide bar, etc. The horizontal drive assembly 3 is connected to the temperature compensation coil 5. The horizontal drive assembly 3 is used to drive the temperature compensation coil 5 to displace along a direction parallel to the axis of the reaction chamber 1. The rotation assembly 4 can be an electric rotating gear, an electric rotating rod, etc. The rotation assembly 4 is connected to the horizontal drive assembly 3. The rotation assembly 4 is used to drive the horizontal drive assembly 3 to rotate, so that the temperature compensation coil 5 can perform a rotational motion around the axis of the reaction chamber 1.

[0051] The working principle of this embodiment is as follows: The temperature compensation coil 5 can be moved to any position outside the reaction chamber 1 under the drive of the horizontal drive assembly 3 and the rotation assembly 4. Therefore, when the temperature field distribution inside the reaction chamber 1 is uneven, the temperature compensation coil 5 can perform compensation heating on the local position corresponding to the temperature abnormal point in the temperature field distribution (i.e., the local position corresponding to the uneven temperature field distribution), so as to make the temperature field distribution inside the reaction chamber 1 uniform. When the temperature field distribution is uniform, the temperatures of all regions inside the reaction chamber 1 are equal; when the temperature field distribution is uneven, the temperatures of some points or some regions inside the reaction chamber 1 are lower or higher than those of other regions. Therefore, the temperature abnormal point can be a high-temperature point or a high-temperature region with a temperature higher than that of other regions, and the temperature abnormal point can also be a low-temperature point or a low-temperature region with a temperature lower than that of other regions. It should be understood that since the temperature compensation coil 5 can only perform heating, when there is a high-temperature point in the temperature field inside the reaction chamber 1, the temperature compensation coil 5 performs compensation heating on the positions other than the high-temperature point to raise the temperatures of the positions other than the high-temperature point to the temperature corresponding to the high-temperature point, so as to make the temperature field distribution inside the reaction chamber 1 uniform; when there is a low-temperature point in the temperature field inside the reaction chamber 1, the temperature compensation coil 5 performs compensation heating on the position where the low-temperature point is located to raise the temperature of the position where the low-temperature point is located to the temperature corresponding to the position other than the low-temperature point, so as to make the temperature field distribution inside the reaction chamber 1 uniform. It should be understood that when the epitaxial device performs an epitaxial growth process, the temperature compensation device of the reaction chamber in this embodiment is used to solve the situation of uneven temperature field distribution inside the reaction chamber 1.

[0052] A temperature compensation device for a reaction chamber provided by the present application first moves the temperature compensation coil 5 to a local position corresponding to the uneven temperature field distribution through the horizontal driving assembly 3 and the rotating assembly 4, and then compensates and heats the reaction chamber 1 through the temperature compensation coil 5, so as to realize the compensation heating of the local position corresponding to the uneven temperature field distribution, so that the temperature field distribution in the reaction chamber 1 is uniform.

[0053] In some preferred embodiments, the horizontal driving assembly 3 includes a first motor 31, a lead screw 32 and a nut 33. The temperature compensation coil 5 is arranged on the nut 33. The nut 33 is in threaded connection with the lead screw 32. The first motor 31 is in transmission connection with the lead screw 32. The first motor 31 drives the lead screw 32 to rotate so that the nut 33 moves on the lead screw 32.

[0054] In some preferred embodiments, the rotating assembly 4 includes a connecting rod and a second motor 41. Two ends of the connecting rod 42 are respectively connected with the second motor 41 and the horizontal driving assembly 3. The second motor 41 is used to drive the horizontal driving assembly 3 to rotate through the connecting rod 42.

[0055] In some embodiments, the reaction chamber 1 includes an upper half-moon reaction cavity 11 and a lower half-moon reaction cavity 12. Two sides of the upper half-moon reaction cavity 11 are connected with the lower half-moon reaction cavity 12 through side wall supports 13. The rotating assembly 4 is used to drive the horizontal driving assembly 3 to rotate within the outer range of the upper half-moon reaction cavity 11 or within the outer range of the lower half-moon reaction cavity 12. Epitaxial deposition occurs on the surface of the wafer 6. Since the wafer 6 can be approximately regarded as a plane, only by ensuring the uniform temperature field distribution in the plane where the wafer 6 is located and its nearby planes can the quality of the epitaxial growth process be ensured. And since the wafer 6 is horizontally placed in the middle of the reaction chamber 1, for the reaction chamber 1, heating the upper half-moon reaction cavity 11 or the lower half-moon reaction cavity 12 can adjust the temperature field distribution in the plane where the wafer 6 is located and its nearby planes. Therefore, the rotating assembly 4 in this embodiment only needs to drive the horizontal driving assembly 3 to rotate within the outer range of the upper half-moon reaction cavity 11 or within the outer range of the lower half-moon reaction cavity 12.

[0056] As can be seen from the above, a temperature compensation device for a reaction chamber provided by the present application first moves the temperature compensation coil 5 to a local position corresponding to the uneven temperature field distribution through the horizontal driving assembly 3 and the rotating assembly 4, and then compensates and heats the reaction chamber 1 through the temperature compensation coil 5, so as to realize the compensation heating of the local position corresponding to the uneven temperature field distribution, so that the temperature field distribution in the reaction chamber 1 is uniform.

[0057] In a second aspect, as Figure 3 - Figure 4As shown in the figure, the present application also provides a temperature compensation system for a reaction chamber, which is used to compensate the temperature in the reaction chamber 1 of an epitaxial device. The epitaxial device includes a reaction chamber 1 and an induction coil 2. The induction coil 2 is spirally arranged outside the reaction chamber 1. The outer shape of the reaction chamber 1 is cylindrical. The temperature compensation system of the reaction chamber includes:

[0058] A temperature compensation device, which includes a temperature compensation coil 5, a horizontal driving component 3 and a rotating component 4. The temperature compensation coil 5 is arranged outside the reaction chamber 1. The horizontal driving component 3 is connected to the temperature compensation coil 5. The horizontal driving component 3 is used to drive the temperature compensation coil 5 to displace along the direction parallel to the axis of the reaction chamber 1. The rotating component 4 is connected to the horizontal driving component 3. The rotating component 4 is used to drive the horizontal driving component 3 to rotate;

[0059] A temperature field detection component 7, which is used to detect the temperature field information in the reaction chamber 1;

[0060] A controller 8, which is electrically connected to the induction coil 2, the temperature compensation coil 5, the horizontal driving component 3, the rotating component 4 and the temperature field detection component 7;

[0061] The controller 8 is used to obtain the position information of the temperature anomaly point according to the temperature field information;

[0062] The controller 8 is also used to control the horizontal driving component 3 and the rotating component 4 to drive the temperature compensation coil 5 to move to compensate the heating of the reaction chamber 1 according to the position information, so as to make the temperature field information evenly distributed.

[0063] Among them, the temperature compensation coil 5 can be a planar coil, an arc-shaped coil, etc. The temperature compensation coil 5 is preferably a planar coil. The temperature compensation coil 5 can be arranged outside the induction coil 2 or between the induction coil 2 and the reaction chamber 1. The temperature compensation coil 5 is preferably arranged between the induction coil 2 and the reaction chamber 1. The temperature compensation coil 5 is used to perform compensation heating on a local position of the reaction chamber 1. The horizontal drive assembly 3 is a linear drive assembly, such as a cylinder, an oil cylinder, an electric linear module, an electric slide bar, etc. The horizontal drive assembly 3 is connected to the temperature compensation coil 5. The horizontal drive assembly 3 is used to drive the temperature compensation coil 5 to displace in a direction parallel to the axis of the reaction chamber 1. The rotation assembly 4 can be an electric rotating gear, an electric rotating rod, etc. The rotation assembly 4 is connected to the horizontal drive assembly 3. The rotation assembly 4 is used to drive the horizontal drive assembly 3 to rotate, so that the temperature compensation coil 5 can perform a rotational movement around the axis of the reaction chamber 1. The temperature field detection assembly 7 can be an infrared detection assembly, multiple temperature sensors arranged in the reaction chamber 1, etc. The temperature field detection assembly 7 is used to detect the temperature field information in the reaction chamber 1. The temperature field information can reflect the temperature distribution in the reaction chamber 1. Therefore, the controller 8 can obtain the temperature abnormal point and its position information according to the temperature field information. The controller 8 is electrically connected to the induction coil 2, the temperature compensation coil 5, the horizontal drive assembly 3, the rotation assembly 4, and the temperature field detection assembly 7. The controller 8 can control the induction coil 2 and the temperature compensation coil 5 to start or stop heating. The controller 8 can also control the horizontal drive assembly 3 to drive the temperature compensation coil 5 to displace in a direction parallel to the axis of the reaction chamber 1 and control the rotation assembly 4 to drive the horizontal drive assembly 3 to rotate.

[0064] The working principle of the temperature compensation system of the reaction chamber is as follows: The controller 8 obtains the position information of the temperature abnormal point according to the temperature field information. The controller 8 controls the horizontal drive assembly 3 and the rotation assembly 4 to drive the temperature compensation coil 5 to move according to the position information of the temperature abnormal point, and controls the temperature compensation coil 5 to perform compensation heating on the reaction chamber 1, so that the temperature field distribution in the reaction chamber 1 is uniform. A temperature compensation system of a reaction chamber provided in the present application first obtains the position information of the temperature abnormal point according to the temperature field information detected by the temperature field detection assembly 7, and then controls the horizontal drive assembly 3 and the rotation assembly 4 to move the temperature compensation coil 5 according to the position information and controls the temperature compensation coil 5 to perform compensation heating, thereby automatically performing compensation heating on the local position corresponding to the uneven temperature field distribution, so that the temperature field distribution in the reaction chamber 1 is uniform.

[0065] In some embodiments, the temperature abnormal point is a low-temperature point. The control process of the controller 8 controlling the horizontal drive assembly 3 and the rotation assembly 4 to drive the temperature compensation coil 5 to move to perform compensation heating on the reaction chamber 1 so that the temperature field information is evenly distributed includes:

[0066] The controller 8 controls the horizontal drive assembly 3 and the rotating assembly 4 to drive the temperature compensation coil 5 to move according to the position information, so that the temperature compensation coil 5 moves to the position corresponding to the position information;

[0067] The controller 8 controls the temperature compensation coil 5 to perform compensation heating on the reaction chamber 1, so that the temperature field information is evenly distributed.

[0068] Among them, the working principle of this embodiment is: the temperature at the position corresponding to the temperature anomaly point is lower than the temperature at the position outside the temperature anomaly point. The controller 8 controls the horizontal drive assembly 3 and the rotating assembly 4 to move the temperature compensation coil 5 to the position corresponding to the position information of the temperature anomaly point, and controls the temperature compensation coil 5 to perform compensation heating on the reaction chamber 1. Since the heating object of the temperature compensation coil 5 at this time is the position corresponding to the temperature anomaly point, the temperature rising rate at the position corresponding to the temperature anomaly point is higher than the temperature rising rate at the position outside the temperature anomaly point. The temperature at the position corresponding to the temperature anomaly point will gradually rise to be equal to the temperature at the position outside the temperature anomaly point, so that the temperature field information in the reaction chamber 1 is evenly distributed. It should be understood that the low temperature point can be a low temperature region. At this time, the controller 8 controls the horizontal drive assembly 3 and the rotating assembly 4 to drive the temperature compensation coil 5 to move within the low temperature region, so that the temperature compensation coil 5 performs compensation heating on the entire low temperature region.

[0069] In some embodiments, the temperature anomaly point is a high temperature point. The control process of the controller 8 controlling the horizontal drive assembly 3 and the rotating assembly 4 to drive the temperature compensation coil 5 to move according to the position information to perform compensation heating on the reaction chamber 1 so that the temperature field information is evenly distributed includes:

[0070] The controller 8 controls the horizontal drive assembly 3 and the rotating assembly 4 to drive the temperature compensation coil 5 to move, so that the temperature compensation coil 5 moves to a position outside the position corresponding to the position information;

[0071] The controller 8 controls the temperature compensation coil 5 to perform compensation heating on the reaction chamber 1, so that the temperature field information is evenly distributed.

[0072] Among them, the working principle of this embodiment is: the temperature at the position corresponding to the temperature anomaly point is higher than the temperature at the position outside the temperature anomaly point. The controller 8 controls the horizontal drive assembly 3 and the rotating assembly 4 to drive the temperature compensation coil 5 to move to a position outside the position corresponding to the position information of the temperature anomaly point, and controls the temperature compensation coil 5 to perform compensation heating on the reaction chamber 1. Since the heating corresponding to the temperature compensation coil 5 at this time is the position outside the temperature anomaly point, the temperature rising rate at the position corresponding to the temperature anomaly point is lower than the temperature rising rate at the position outside the temperature anomaly point. The temperature at the position outside the temperature anomaly point will gradually rise to be equal to the temperature at the position corresponding to the temperature anomaly point, so that the temperature field information in the reaction chamber 1 is evenly distributed.

[0073] When the induction coil 2 of the above embodiment is continuously heating the reaction chamber 1 during the compensation heating of the temperature compensation coil 5, the eddy current generated by the induction coil 2 may interfere with the eddy current generated by the temperature compensation coil 5, thereby affecting the compensation heating of the temperature compensation coil 5. To solve this technical problem, in some embodiments, before the controller 8 controls the temperature compensation coil 5 to perform compensation heating on the reaction chamber 1 to make the temperature field information distribution uniform, it is also used to control the induction coil 2 to stop heating.

[0074] Among them, the working principle of this embodiment is: Since the reaction chamber 1 has a sealed structure, even if the induction coil 2 stops heating the reaction chamber 1, the temperature field information in the reaction chamber 1 will not change much. Therefore, the controller 8 of this embodiment first controls the induction coil 2 to stop heating, and then controls the temperature compensation coil 5 to perform compensation heating on the reaction chamber 1 to avoid the eddy current generated by the induction coil 2 interfering with the eddy current generated by the temperature compensation coil 5.

[0075] In some embodiments, the control process in which the controller 8 obtains the position information of the temperature abnormal point according to the temperature field information includes:

[0076] The controller 8 detects whether there is a temperature abnormal point in the reaction chamber 1 according to the temperature field information;

[0077] If there is a temperature abnormal point, the controller 8 obtains the position information of the temperature abnormal point according to the temperature field information.

[0078] Among them, since the temperature field information can reflect the temperature distribution in the reaction chamber 1, and this temperature distribution can reflect whether there is a temperature abnormal point in the reaction chamber 1 and the position of the temperature abnormal point in the reaction chamber 1 when there is a temperature abnormal point, the controller 8 can detect whether there is a temperature abnormal point in the reaction chamber 1 according to the temperature field information, and when there is a temperature abnormal point, obtain the position information of the temperature abnormal point according to the temperature field information.

[0079] In some preferred embodiments, the temperature field detection component 7 includes an infrared pyrometer. An observation hole 9 is penetrated through the cavity of the reaction chamber 1. The infrared pyrometer is used to detect the temperature distribution in the reaction chamber 1 through the observation hole 9. The controller 8 is electrically connected to the infrared pyrometer. The infrared pyrometer can detect the temperature distribution of a certain area by detecting the infrared rays in that area. Therefore, the infrared pyrometer obtains the infrared rays in the reaction chamber 1 through the observation hole 9 to detect the temperature distribution in the reaction chamber 1. Since the temperature distribution in the reaction chamber 1 is associated with the temperature field information in the reaction chamber 1, the controller 8 can obtain the temperature field information in the reaction chamber 1 according to the temperature distribution detected by the infrared pyrometer. The infrared pyrometer can detect the temperature field distribution of the inner bottom surface of the reaction chamber 1, the inner top surface of the reaction chamber 1, or the substrate in the reaction chamber 1. Since the wafer 6 is placed on the substrate, detecting the temperature field distribution of the substrate can more accurately reflect the temperature field distribution of the plane where the wafer 6 is located and the planes nearby. Therefore, the infrared pyrometer preferably detects the temperature field distribution of the substrate.

[0080] As can be seen from the above, for a temperature compensation system of a reaction chamber provided by the present application, first, the position information of the temperature anomaly point is obtained according to the temperature field information detected by the temperature field detection component 7, and then, according to the position information, the horizontal driving component 3 and the rotating component 4 are controlled to move the temperature compensation coil 5 and control the temperature compensation coil 5 to perform compensation heating, so as to automatically perform compensation heating on the local position corresponding to the uneven temperature field distribution, so that the temperature field distribution in the reaction chamber 1 is uniform.

[0081] In the third aspect, as Figure 5 shown, the present application also provides a temperature compensation method for a reaction chamber, which is used to compensate the temperature in the reaction chamber 1 of an epitaxial device. The epitaxial device includes a reaction chamber 1 and an induction coil 2. The induction coil 2 is spirally arranged outside the reaction chamber 1. The outer shape of the reaction chamber 1 is cylindrical. Applied in the temperature compensation system of the reaction chamber, the temperature compensation system of the reaction chamber includes a temperature compensation device and a temperature field detection component 7, which includes a temperature compensation coil 5, a horizontal driving component 3, and a rotating component 4. The temperature compensation coil 5 is arranged outside the reaction chamber 1. The horizontal driving component 3 is connected to the temperature compensation coil 5. The horizontal driving component 3 is used to drive the temperature compensation coil 5 to displace along the direction parallel to the axis of the reaction chamber 1. The rotating component 4 is connected to the horizontal driving component 3. The rotating component 4 is used to drive the horizontal driving component 3 to rotate. The temperature field detection component 7 is used to detect the temperature field information in the reaction chamber 1. The temperature compensation method for the reaction chamber includes the following steps:

[0082] S1. Obtain the position information of the temperature anomaly point according to the temperature field information;

[0083] S2. According to the position information, control the horizontal driving component 3 and the rotating component 4 to drive the temperature compensation coil 5 to move to perform compensation heating on the reaction chamber 1, so that the temperature field information is evenly distributed.

[0084] Among them, the working principle of a temperature compensation method for a reaction chamber provided by an embodiment of this application is the same as that of a temperature compensation system for a reaction chamber provided in the second aspect above, and will not be elaborated in detail here. For a temperature compensation method for a reaction chamber provided by this application, first, the position information of the temperature anomaly point is obtained according to the temperature field information detected by the temperature field detection component 7, and then the horizontal driving component 3 and the rotating component 4 are controlled according to the position information to move the temperature compensation coil 5 and control the temperature compensation coil 5 to perform compensation heating, so as to automatically perform compensation heating on the local position corresponding to the uneven temperature field distribution, so that the temperature field distribution in the reaction chamber 1 is uniform.

[0085] As can be seen from the above, for a temperature compensation device, system and method provided by this application, first, the temperature compensation coil 5 is moved to the local position corresponding to the uneven temperature field distribution through the horizontal driving component 3 and the rotating component 4, and then the reaction chamber 1 is compensated and heated through the temperature compensation coil 5, so as to perform compensation heating on the local position corresponding to the uneven temperature field distribution, so that the temperature field distribution in the reaction chamber 1 is uniform.

[0086] In this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations.

[0087] The above description is only for the embodiments of this application and is not intended to limit the protection scope of this application. For those skilled in the art, this application can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of this application shall be included in the protection scope of this application.

Claims

1. A temperature compensation device for a reaction chamber, which is used to compensate the temperature inside the reaction chamber (1) of an epitaxial device. The epitaxial device includes the reaction chamber (1) and an induction coil (2). The induction coil (2) is spirally arranged outside the reaction chamber (1). The outer shape of the reaction chamber (1) is cylindrical, and it is characterized in that, The temperature compensation device of the reaction chamber includes: A temperature compensation coil (5), which is arranged outside the reaction chamber (1). When the temperature compensation coil (5) performs compensation heating, the induction coil (2) stops heating; A horizontal drive assembly (3), which is connected to the temperature compensation coil (5) and is used to drive the temperature compensation coil (5) to displace along a direction parallel to the axis of the reaction chamber (1); A rotation assembly (4), which is connected to the horizontal drive assembly (3) and is used to drive the horizontal drive assembly (3) to rotate.

2. The temperature compensation device for the reaction chamber according to claim 1, wherein The temperature compensation coil (5) is a planar coil.

3. The temperature compensation device of the reaction chamber according to claim 1, characterized in that, The reaction chamber (1) includes an upper semi-moon reaction cavity (11) and a lower semi-moon reaction cavity (12). Both sides of the upper semi-moon reaction cavity (11) are connected to the lower semi-moon reaction cavity (12) through side wall supports (13). The rotation assembly (4) is used to drive the horizontal drive assembly (3) to rotate within the outer range of the upper semi-moon reaction cavity (11) or within the outer range of the lower semi-moon reaction cavity (12).

4. A temperature compensation system for a reaction chamber, which is used to compensate the temperature inside the reaction chamber (1) of an epitaxial device. The epitaxial device includes the reaction chamber (1) and an induction coil (2). The induction coil (2) is spirally arranged outside the reaction chamber (1). The outer shape of the reaction chamber (1) is cylindrical, and it is characterized in that, The temperature compensation system of the reaction chamber includes: A temperature compensation device, which includes a temperature compensation coil (5), a horizontal drive assembly (3) and a rotation assembly (4). The temperature compensation coil (5) is arranged outside the reaction chamber (1). The horizontal drive assembly (3) is connected to the temperature compensation coil (5). The horizontal drive assembly (3) is used to drive the temperature compensation coil (5) to displace along a direction parallel to the axis of the reaction chamber (1). The rotation assembly (4) is connected to the horizontal drive assembly (3). The rotation assembly (4) is used to drive the horizontal drive assembly (3) to rotate; A temperature field detection assembly (7), which is used to detect the temperature field information inside the reaction chamber (1); A controller (8), which is electrically connected to the induction coil (2), the temperature compensation coil (5), the horizontal drive assembly (3), the rotation assembly (4) and the temperature field detection assembly (7); The controller (8) is used to obtain the position information of the temperature anomaly point according to the temperature field information; The controller (8) is also used to control the horizontal drive assembly (3) and the rotation assembly (4) to drive the temperature compensation coil (5) to move to perform compensation heating on the reaction chamber (1) according to the position information, so that the temperature field information is evenly distributed; Before the controller (8) controls the temperature compensation coil (5) to perform compensation heating on the reaction chamber (1) to make the temperature field information evenly distributed, it is also used to control the induction coil (2) to stop heating.

5. The temperature compensation system of a reaction chamber according to claim 4, characterized in that, The temperature anomaly point is a low-temperature point. The control process of the controller (8) controlling the horizontal drive assembly (3) and the rotation assembly (4) to drive the temperature compensation coil (5) to move to perform compensation heating on the reaction chamber (1) so that the temperature field information is evenly distributed includes: Controlling the horizontal drive assembly (3) and the rotation assembly (4) to drive the temperature compensation coil (5) to move according to the position information, so that the temperature compensation coil (5) moves to the position corresponding to the position information; Control the temperature compensation coil (5) to perform compensation heating on the reaction chamber (1) so that the temperature field information is evenly distributed.

6. The temperature compensation system of a reaction chamber according to claim 4, characterized in that The temperature anomaly point is a high-temperature point. The control process in which the controller (8) controls the horizontal drive assembly (3) and the rotation assembly (4) to drive the temperature compensation coil (5) to move to perform compensation heating on the reaction chamber (1) so that the temperature field information is evenly distributed includes: Control the horizontal drive assembly (3) and the rotation assembly (4) to drive the temperature compensation coil (5) to move according to the position information, so that the temperature compensation coil (5) moves to a position other than the position corresponding to the position information; Control the temperature compensation coil (5) to perform compensation heating on the reaction chamber (1) so that the temperature field information is evenly distributed.

7. The temperature compensation system of a reaction chamber according to claim 5 or 6, characterized in that, Before the controller (8) controls the temperature compensation coil (5) to perform compensation heating on the reaction chamber (1) so that the temperature field information is evenly distributed, it is also used to control the induction coil (2) to stop heating.

8. The temperature compensation system of a reaction chamber according to claim 4, characterized in that The control process in which the controller (8) obtains the position information of the temperature anomaly point according to the temperature field information includes: Detect whether there is a temperature anomaly point in the reaction chamber (1) according to the temperature field information; If there is a temperature anomaly point, obtain the position information of the temperature anomaly point according to the temperature field information.

9. The temperature compensation system of a reaction chamber according to claim 4, wherein The temperature field detection component (7) includes an infrared pyrometer. An observation hole (9) is penetrated through the cavity of the reaction chamber (1). The infrared pyrometer is used to detect the temperature distribution in the reaction chamber (1) through the observation hole (9). The controller (8) is electrically connected to the infrared pyrometer.

10. A temperature compensation method for a reaction chamber, which is used to compensate the temperature inside the reaction chamber (1) of an epitaxial device. The epitaxial device includes the reaction chamber (1) and an induction coil (2). The induction coil (2) is spirally arranged outside the reaction chamber (1). The outer shape of the reaction chamber (1) is cylindrical, and it is characterized in that, Applied in the temperature compensation system of the reaction chamber. The temperature compensation system of the reaction chamber includes a temperature compensation device and a temperature field detection component (7). The temperature compensation device includes a temperature compensation coil (5), a horizontal drive assembly (3), a rotation assembly (4) and a temperature field detection component (7). The temperature compensation coil (5) is arranged outside the reaction chamber (1). The horizontal drive assembly (3) is connected to the temperature compensation coil (5). The horizontal drive assembly (3) is used to drive the temperature compensation coil (5) to displace along the direction parallel to the axis line of the reaction chamber (1). The rotation assembly (4) is connected to the horizontal drive assembly (3). The rotation assembly (4) is used to drive the horizontal drive assembly (3) to rotate. The temperature field detection component (7) is used to detect the temperature field information in the reaction chamber (1). The temperature compensation method of the reaction chamber includes the following steps: Obtain the position information of the temperature anomaly point according to the temperature field information; Control the induction coil (2) to stop heating; Control the horizontal drive assembly (3) and the rotation assembly (4) to drive the temperature compensation coil (5) to move to perform compensation heating on the reaction chamber (1) so that the temperature field information is evenly distributed.

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