Method and device for detecting resistivity of semiconductor material and method for determining a relationship
By irradiating semiconductor materials with ultraviolet light to obtain the emission color, and using the color value-resistivity relationship to determine the resistivity, the problem of low detection efficiency and high cost in existing technologies is solved, realizing efficient and low-cost resistivity detection.
Patent Information
- Application Number
- CN202210345171.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-03-31
- Publication Date
- 2026-02-06
- Estimated Expiration
- 2042-03-31
AI Technical Summary
Existing technologies require processing steps such as slicing to detect the resistivity of semiconductor crystals, resulting in low detection efficiency and high cost. Furthermore, precision detection equipment is expensive and not suitable for manufacturing processes.
Semiconductor materials are irradiated with ultraviolet light to obtain their emission color, and the resistivity is determined by using the color value-resistivity relationship, thus avoiding the use of slicing and precision testing instruments.
It improves the detection efficiency in the production process, reduces the detection cost, and enables resistivity detection without the need for slicing and precision testing equipment.
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Figure CN114966207B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] Embodiments of the present application relate to resistivity detection technology, and in particular to a semiconductor material resistivity detection method and device and a relationship determination method. BACKGROUND
[0002] For industrial production of semiconductor crystals, resistivity is one of the most important performance parameter indicators.
[0003] However, in the prior art, the resistivity of industrial semiconductor crystal products needs to be detected by slicing, cutting, grinding and polishing the wafer product after slicing, cutting, grinding and polishing the ingot, and then using precise detection instruments in the laboratory for detection. Therefore, the method of slicing and other steps after processing each ingot for precise detection increases the work intensity of the detection personnel in the detection department, and also increases the depreciation rate of the precise detection equipment. In addition, the precise detection equipment is large in size, expensive and strict in detection environment requirements, and is not suitable for resistivity detection in the production process. Therefore, there are problems of low detection efficiency and high detection cost. SUMMARY
[0004] The present application provides a semiconductor material resistivity detection method and device and a relationship determination method to improve detection efficiency and reduce detection cost.
[0005] In a first aspect, embodiments of the present application provide a semiconductor material resistivity detection method, comprising:
[0006] Irradiating the semiconductor material to be measured with ultraviolet light;
[0007] Obtaining the luminescent color of the semiconductor material to be measured;
[0008] Determining a color value according to the luminescent color;
[0009] Determining the resistivity corresponding to the color value according to the color value-resistivity relationship.
[0010] Optionally, determining the color value according to the luminescent color comprises determining an RGB value according to the luminescent color, and determining the color value according to the RGB value.
[0011] Optionally, determining the color value according to the RGB value comprises:
[0012] Determining the color value according to the following formula: A=(65536*B)+(256*G)+(R);
[0013] Wherein, A is the color value, B is the blue value in the RGB value, G is the green value in the RGB value, and R is the red value in the RGB value.
[0014] Optionally, the determining the resistivity corresponding to the color value according to the color value-resistivity relationship comprises determining the resistivity according to a color value-resistivity relationship formula A=kρ.
[0015] wherein ρ is the resistivity and k is a positive number.
[0016] Optionally, the determining the resistivity corresponding to the color value according to the color value-resistivity relationship comprises determining the resistivity corresponding to the color value according to a color value-resistivity corresponding database.
[0017] Optionally, the obtaining the light-emitting color of the semiconductor material under test comprises: taking a photo of the semiconductor material under test to obtain a color photo of the semiconductor material under test; and determining the light-emitting color according to the color of the color photo.
[0018] Optionally, the wavelength of the ultraviolet light is 320-340 nm.
[0019] In a second aspect, the embodiment of the present application further provides a method for determining the relationship between the light-emitting color and the resistivity of a semiconductor material, comprising:
[0020] Irradiating the semiconductor material under test with ultraviolet light;
[0021] Obtaining the light-emitting color of the semiconductor material under test;
[0022] Determining a color value according to the light-emitting color;
[0023] Obtaining the resistivity of the semiconductor material under test;
[0024] Determining the color value-resistivity relationship according to the color value and the resistivity.
[0025] Optionally, the determining the color value-resistivity relationship according to the color value and the resistivity comprises establishing the corresponding relationship between the color value and the resistivity to form a color value-resistivity corresponding database.
[0026] In a third aspect, the embodiment of the present application further provides a device for detecting the resistivity of a semiconductor material, comprising:
[0027] An ultraviolet emitter for irradiating the semiconductor material under test with ultraviolet light;
[0028] A color sensor for obtaining the light-emitting color of the semiconductor material under test;
[0029] An information processor for determining a color value according to the light-emitting color, and determining the resistivity corresponding to the color value according to a color value-resistivity relationship.
[0030] The embodiment of the present application provides a semiconductor material resistivity detection method, which comprises the following steps: irradiating a to-be-detected semiconductor material with ultraviolet light; obtaining the luminescent color of the to-be-detected semiconductor material; determining a color value according to the luminescent color; and determining the resistivity corresponding to the color value according to the color value-resistivity relationship. The embodiment of the present application can determine the resistivity of the semiconductor material through the luminescent color, without the need of processing steps such as slicing and precise detection instruments, thereby improving the detection efficiency in the production process and reducing the detection cost. BRIEF DESCRIPTION OF DRAWINGS
[0031] Figure 1 A semiconductor material resistivity detection method provided by the embodiment of the present application is shown in the method flowchart.
[0032] Figure 2 A semiconductor material luminescent color-resistivity relationship determination method provided by the embodiment of the present application is shown in the method flowchart.
[0033] Figure 3 A semiconductor material resistivity detection device provided by the embodiment of the present application is shown in the structural schematic diagram. DETAILED DESCRIPTION
[0034] The present application will be further described in detail below in combination with the drawings and embodiments. It can be understood that the specific embodiments described herein are only used to explain the present application, but not to limit the present application. In addition, it should be noted that, for the convenience of description, only the parts related to the present application are shown in the drawings, but not all the structures.
[0035] The phenomenon that the solid is excited by light to cause luminescence is that the internal substance absorbs energy and emits the excess energy in the form of light radiation other than heat radiation. It roughly goes through three main stages of absorption, energy transmission and light emission. The absorption and emission of light occur in the transition between energy levels, that is, the luminescent center absorbs external energy and is excited from the ground state to the excited state, and when it returns to the ground state from the excited state, the energy is released in the form of luminescence. Ultraviolet radiation, visible light and infrared radiation can all cause photoluminescence.
[0036] For semiconductor materials, they also have the photoluminescence phenomenon. Based on the above phenomenon, the following embodiments are provided.
[0037] Figure 1 The method flowchart of the semiconductor material resistivity detection method provided by the embodiment of the present application is shown in Figure 1 The embodiment of the present application provides a semiconductor material resistivity detection method, which comprises the following steps:
[0038] S11: irradiating a to-be-detected semiconductor material with ultraviolet light.
[0039] The semiconductor material to be measured can be silicon carbide and the like. When different semiconductor materials are irradiated, the intensity of the ultraviolet light, the incident angle, the irradiation distance, the placement position of the semiconductor material and the like can be fixed one by one, and the crystals of different resistivities are photographed under the same parameters. The purpose of irradiating different semiconductor materials with the same ultraviolet light is achieved by controlling the variables as much as possible. Optionally, the wavelength of the ultraviolet light can be 320-340 nm.
[0040] S12: Obtain the light-emitting color of the semiconductor material to be measured.
[0041] The inventors find that the light-emitting color of the semiconductor material is directly related to the resistivity of the semiconductor material, and the resistivity of the semiconductor material can be determined by the light-emitting color of the semiconductor material. Therefore, obtaining the light-emitting color of the semiconductor material to be measured is of great significance for determining the resistivity of the semiconductor material. The embodiments of the present application do not limit the method for obtaining the light-emitting color of the semiconductor material to be measured. For example, the color sensor can be used to obtain the light-emitting color of the semiconductor material to be measured.
[0042] In other embodiments, the semiconductor material to be measured can also be photographed to obtain a color photograph of the semiconductor material to be measured, and the light-emitting color can be determined according to the color of the color photograph.
[0043] In the color photograph of the semiconductor material to be measured photographed by the camera, the light-emitting color of the semiconductor material is recorded, so the light-emitting color of the semiconductor material can be determined according to the color of the color photograph.
[0044] S13: Determine the color value according to the light-emitting color.
[0045] The color value is the result of numericalizing the light-emitting color. The light-emitting color can be digitized by any color mode, and then the digitized result is numerized to obtain the color value. The color mode can be any one of RGB mode, CMYK mode, Lab mode and the like. Taking the RGB mode as an example, the RGB value can be determined according to the light-emitting color, and the color value can be determined according to the RGB value. The algorithm for obtaining the color value from the RGB value can be determined according to actual needs. For example, the color value can be determined according to the following formula: A=(65536*B)+(256*G)+(R); wherein A is the color value, B is the blue value in the RGB value, G is the green value in the RGB value, and R is the red value in the RGB value. The RGB value obtained is substituted into the above formula to obtain the color value. The color value calculated by the above formula has a characteristic of being proportional to the resistivity of the semiconductor material to be measured.
[0046] S14: determining the resistivity corresponding to the color value according to the color value-resistivity relationship.
[0047] Since the light-emitting color of the semiconductor material is directly related to the resistivity of the semiconductor material, a corresponding relationship between the color value and the resistivity can be established, and the resistivity of the semiconductor material can be determined by the color value of the light-emitting color of the semiconductor material. The corresponding relationship between the color value and the resistivity is named as the color value-resistivity relationship. In actual implementation, the corresponding method between the color value and the resistivity can be determined as required, and the embodiments of the present application are not limited to specific implementation. In addition, two corresponding methods between the color value and the resistivity will be exemplarily provided below. According to the color value-resistivity relationship, the resistivity of the semiconductor material can be obtained only by the color value of the light-emitting color of the semiconductor material. That is, only by the color value of the light-emitting color of the semiconductor material crystal, it can be preliminarily judged whether the resistivity of the semiconductor material crystal such as silicon carbide is in the qualified range. When detecting the resistivity of the semiconductor material in the production process, there is no need to perform processing steps such as slicing and detection by precise detection instruments. The detection efficiency in the production process is improved, and the detection cost is reduced.
[0048] In other embodiments, the resistivity corresponding to the color value can be determined according to the color value-resistivity relationship, including determining the resistivity by the color value-resistivity relationship A=kρ.
[0049] Wherein, ρ is the resistivity, and k is a positive number. The color value can be calculated according to the formula A=(65536*B)+(256*G)+(R), and the color value is proportional to the resistivity. k is a preset value, and the color value can be brought into the color value-resistivity relationship resistivity to obtain the resistivity. The resistivity can be obtained simply and efficiently by the above-mentioned method.
[0050] In other embodiments, the resistivity corresponding to the color value can be determined according to the color value-resistivity relationship, including determining the resistivity by the color value-resistivity relationship A=kρ.
[0051] Wherein, the resistivity corresponding to the color value can be obtained according to the color value-resistivity corresponding database obtained in advance. The way of directly determining the resistivity according to the preset corresponding relationship also has the characteristics of simple and efficient determination of the resistivity.
[0052] Figure 2 A method flowchart of a semiconductor material light-emitting color and resistivity relationship determination method provided by the embodiments of the present application is shown in Figure 2 The embodiments of the present application also provide a semiconductor material light-emitting color and resistivity relationship determination method, which comprises:
[0053] S21: irradiating the semiconductor material to be measured with ultraviolet light.
[0054] S22: Obtain the light-emitting color of the semiconductor material to be measured.
[0055] S23: Determine the color value according to the light-emitting color.
[0056] S24: Obtain the resistivity of the semiconductor material to be measured.
[0057] S25: Determine the color value-resistivity relationship according to the color value and the resistivity.
[0058] In which, the photo recording the light-emitting color of the semiconductor material can be taken by the camera, the color value is determined according to the light-emitting color on the photo, and then the parameters of the semiconductor material in different photos are listed in the table. The resistivity can be measured in advance, the resistivity of the semiconductor material to be measured can be directly obtained according to the type of the semiconductor material in the photo, and then the resistivity of the semiconductor material to be measured is filled in the table. For example, the relationship table of the color value and the resistivity of the semiconductor material photo can be as shown in Table 1. 1 .
[0059] Table 1 Relationship table of color value and resistivity
[0060] Photo sequence RGB Color value Measured resistivity Photo 1 (128，185，101) 6666624 0.025 Photo 2 (73，98，50) 3301961 0.019
[0061] In the determination of the color value-resistivity relationship according to the color value and the resistivity, since the color value is proportional to the resistivity, it can be determined by the relationship A=kp. Wherein A is the color value, p is the resistivity, and k is a positive number. By bringing the color value and the resistivity into the above relationship, the parameter k can be obtained. And determine the unique relationship between the color value and the resistivity.
[0062] In the determination of the color value-resistivity relationship according to the color value and the resistivity, the corresponding relationship between the color value and the resistivity can also be established to form a color value-resistivity corresponding database. In which, the color value and the resistivity corresponding to the color value can be bound. After multiple measurements, the measurement data is bound pair by pair to form a color value-resistivity corresponding database. In order to query the corresponding resistivity according to the color value subsequently.
[0063] Figure 3 A structure diagram of a semiconductor material resistivity detection device provided by an embodiment of the present application is shown in FIG. 1. Figure 3 The embodiment of the present application also provides a semiconductor material resistivity detection device, which comprises:
[0064] An ultraviolet emitter 1 is used to irradiate the semiconductor material to be measured with ultraviolet light.
[0065] A color sensor 2 is used to obtain the light-emitting color of the semiconductor material to be measured.
[0066] The information processor 3 is configured to determine a color value according to the light-emitting color, and determine a resistivity corresponding to the color value according to a color value-resistivity relationship.
[0067] The color sensor 2 can be a camera, and the information processor 3 can be a computer. The ultraviolet emitter 1 can be configured to emit ultraviolet light with a wavelength of 320-340 nm. The ultraviolet light source is arranged to emit light towards the side of the semiconductor material to be measured, and the angle of incidence, the distance of illumination, and the position of the semiconductor material to be measured are fixed. The camera is arranged to capture a light-emitting photo of the semiconductor material to be measured, and the light-emitting photo is transmitted to the computer. The RGB values of the photo are obtained, and the color value of the light-emitting photo of the semiconductor material to be measured is calculated. The color value is compared with the measured real resistivity data, and a linear relationship between the color value and the resistivity is established. Then, the range of the resistivity of the semiconductor material to be measured can be preliminarily determined according to the color value of the light-emitting photo of the semiconductor material to be measured.
[0068] It should be noted that the above only describes the preferred embodiments of the present application and the principles of the applied technology. Those skilled in the art will understand that the present application is not limited to the specific embodiments described herein, and that various obvious changes, re-adjustments, combinations, and substitutions can be made without departing from the scope of the present application. Therefore, although the present application has been described in detail through the above embodiments, the present application is not limited to the above embodiments, and can include more other equivalent embodiments without departing from the concept of the present application, and the scope of the present application is determined by the appended claims.
Claims
1. A method of detecting the resistivity of a semiconductor material, characterized in that, The method comprises the following steps: irradiating the semiconductor material to be tested with ultraviolet light; acquiring the light-emitting color of the semiconductor material to be tested; determining a color value according to the light-emitting color; determining the resistivity corresponding to the color value according to the color value-resistivity relationship; the step of determining the color value according to the light-emitting color comprises the steps of: determining an RGB value according to the light-emitting color, and determining the color value according to the RGB value; determining the color value according to the RGB value comprises the following steps: determining the color value according to the following formula: A=(65536*B)+(256*G)+(R); wherein A is the color value, B is the blue value in the RGB value, G is the green value in the RGB value, and R is the red value in the RGB value.
2. The method of claim 1, wherein the step of determining the resistivity corresponding to the color value according to the color value-resistivity relationship comprises the step of: determining the resistivity by the color value-resistivity relationship formula A=kρ; wherein ρ is the resistivity, and k is a positive number.
3. The method for detecting the resistivity of semiconductor materials according to claim 1, characterized in that, the step of determining the resistivity corresponding to the color value according to the color value-resistivity relationship comprises the step of: determining the resistivity corresponding to the color value according to a color value-resistivity corresponding database.
4. The method for detecting the resistivity of semiconductor materials according to claim 1, characterized in that, the step of acquiring the light-emitting color of the semiconductor material to be tested comprises the steps of: taking a color photo of the semiconductor material to be tested to obtain the color photo of the semiconductor material to be tested; determining the light-emitting color according to the color of the color photo.
5. The method for detecting the resistivity of semiconductor materials according to claim 1, characterized in that, The wavelength of the ultraviolet light is 320-340 nm.
6. A method of determining the relationship between the luminescence color and the resistivity of a semiconductor material, characterized in that, The method comprises the following steps: irradiating the semiconductor material to be tested with ultraviolet light; acquiring the light-emitting color of the semiconductor material to be tested; determining a color value according to the light-emitting color; acquiring the resistivity of the semiconductor material to be tested; determining a color value-resistivity relationship according to the color value and the resistivity; the step of determining the color value according to the light-emitting color comprises the steps of: determining an RGB value according to the light-emitting color, and determining the color value according to the RGB value; determining the color value according to the RGB value comprises the following steps: determining the color value according to the following formula: A=(65536*B)+(256*G)+(R); wherein A is the color value, B is the blue value in the RGB value, G is the green value in the RGB value, and R is the red value in the RGB value.
7. The method for determining the relationship between the luminescence color and resistivity of semiconductor materials according to claim 6, characterized in that, the step of determining the color value-resistivity relationship according to the color value and the resistivity comprises the steps of: establishing the corresponding relationship between the color value and the resistivity, and forming a color value-resistivity corresponding database.
8. A semiconductor material resistivity detection apparatus, characterized by comprising: The method comprises the following steps: an ultraviolet emitter is used to irradiate the semiconductor material to be tested with ultraviolet light; a color sensor is used to acquire the light-emitting color of the semiconductor material to be tested; an information processor is used to determine a color value according to the light-emitting color, and determine the resistivity corresponding to the color value according to the color value-resistivity relationship; the step of determining the color value according to the light-emitting color comprises the steps of: determining an RGB value according to the light-emitting color, and determining the color value according to the RGB value; determining the color value according to the RGB value comprises the following steps: determining the color value according to the following formula: A=(65536*B)+(256*G)+(R); Wherein, A is the color value, B is the blue value in the RGB value, G is the green value in the RGB value, and R is the red value in the RGB value.
Citation Information
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