Dual-sided display panel and mobile terminal

Abstract

The present application discloses a double-sided display panel and a mobile terminal; the double-sided display panel includes an array substrate, a light-emitting functional layer, and a transflective layer. The light-emitting functional layer includes an anode layer, a light-emitting layer, and a cathode layer. The light-emitting layer includes a plurality of light-emitting devices. The transflective layer is disposed on at least one side of the light-emitting functional layer. Wherein, the orthographic projection of the light-emitting device on the transflective layer is located within the transflective layer; in the present application, a transflective layer is disposed on at least one side of the light-emitting device, and the orthographic projection of the transflective layer on the light-emitting device is located within the corresponding light-emitting device, so that a part of the light emitted by the light-emitting device is transmitted through the transflective layer, and the other part is reflected by the transflective layer, so that these two parts of light are respectively emitted through the direction away from the substrate of the light-emitting device and the direction close to the substrate of the light-emitting device, thereby enabling the double-sided display panel to achieve ultra-thin double-sided display and further reducing the manufacturing cost of the double-sided display panel.

Description

Technical Field

[0001] This application relates to the field of display technologies, and particularly to a double-sided display panel and a mobile terminal. Background Art

[0002] With the increasing diversification of the forms of electronic products, the double-sided display function has become a major feature of the new generation of electronic products, especially for display products in some public places. Currently, the double-sided display devices produced in the industry are usually assembled by pasting two single-sided display panels together, such as pasting two organic electroluminescent panels together.

[0003] However, the process of the double-sided light-emitting panel by pasting is cumbersome, the thickness is extremely thick, and the cost is high. It has become an inevitable trend to prepare an adjustable double-sided light-emitting organic light-emitting diode display device on the same substrate. Summary of the Invention

[0004] This application provides a double-sided display panel and a mobile terminal to solve the technical problems of the existing double-sided display panel having a large thickness and a high cost.

[0005] To solve the above problems, the technical solutions provided in this application are as follows:

[0006] This application provides a double-sided display panel, including an array substrate, a light-emitting functional layer, and a semi-transmissive and semi-reflective layer. The light-emitting functional layer includes an anode layer disposed on the array substrate, a light-emitting layer disposed on the anode layer, and a cathode layer disposed on the light-emitting layer. The light-emitting layer includes a plurality of light-emitting devices. The semi-transmissive and semi-reflective layer is disposed on at least one side of the light-emitting functional layer;

[0007] Wherein, the orthographic projection of the light-emitting device on the semi-transmissive and semi-reflective layer is located within the semi-transmissive and semi-reflective layer.

[0008] In the double-sided display panel provided in the embodiment of this application, the semi-transmissive and semi-reflective layer is disposed on the side of the light-emitting functional layer away from the array substrate;

[0009] Alternatively, the semi-transmissive and semi-reflective layer is embedded in the array substrate.

[0010] In the double-sided display panel provided in the embodiment of this application, the array substrate includes a substrate, a buffer layer disposed on the substrate, an interlayer insulating layer disposed on the buffer layer, a passivation layer disposed on the interlayer insulating layer, and a planarization layer disposed on the passivation layer;

[0011] Wherein, one of the buffer layer, the interlayer insulating layer, the passivation layer, and the planarization layer is provided with a groove, and the semi-transmissive and semi-reflective layer fills the groove.

[0012] In the double-sided display panel provided by the embodiments of the present application, the buffer layer, the interlayer insulating layer, and the passivation layer are all composed of transparent inorganic materials, and the planarization layer is composed of transparent organic materials.

[0013] In the double-sided display panel provided by the embodiments of the present application, the transflective layer includes a first transflective layer and a second transflective layer. The first transflective layer is embedded in the array substrate, and the second transflective layer is disposed on a side of the light-emitting device away from the array substrate;

[0014] Wherein, a positive projection of the second transflective layer on the first transflective layer is located within the first transflective layer.

[0015] In the double-sided display panel provided by the embodiments of the present application, the light-emitting device includes a first sub-pixel unit that displays a first color, a second sub-pixel unit that displays a second color, and a third sub-pixel unit that displays a third color;

[0016] Wherein, the transflective layer includes a third transflective layer, a fourth transflective layer, and a fifth transflective layer. The fourth transflective layer includes a first sub-transflective layer and a second sub-transflective layer. The fifth transflective layer includes a third sub-transflective layer and a fourth sub-transflective layer;

[0017] Wherein, a positive projection of the first sub-pixel unit on the third transflective layer is located within the third transflective layer. The second sub-pixel unit is located between the first sub-transflective layer and the second sub-transflective layer. The third sub-pixel unit is located between the third sub-transflective layer and the fourth sub-transflective layer.

[0018] In the double-sided display panel provided by the embodiments of the present application, the first sub-transflective layer and the third sub-transflective layer are both disposed on a side of the light-emitting device away from the array substrate. The second sub-transflective layer and the fourth sub-transflective layer are both embedded in the array substrate;

[0019] Wherein, a distance between the first sub-transflective layer and the second sub-transflective layer is less than a distance between the third sub-transflective layer and the fourth sub-transflective layer.

[0020] In the double-sided display panel provided by the embodiments of the present application, the transflective layer is formed by stacking one of a titanium dioxide thin film and a niobium pentoxide thin film with a silicon dioxide thin film.

[0021] In the double-sided display panel provided by the embodiments of the present application, a part of the light emitted by the light-emitting device passes through the transflective layer, and another part is reflected by the transflective layer;

[0022] Among them, the proportion of the luminous flux of the light emitted by the light-emitting device transmitted by the semi-transmissive and semi-reflective layer in the total luminous flux of the light emitted by the light-emitting device ranges from 10% to 90%.

[0023] Correspondingly, an embodiment of the present application further provides a mobile terminal, including a terminal body and the double-sided display panel described in any one of the above, and the terminal body and the double-sided display panel are combined into one.

[0024] Beneficial effects: The present application discloses a double-sided display panel and a mobile terminal; the double-sided display panel includes an array substrate, a light-emitting functional layer, and a semi-transmissive and semi-reflective layer. The light-emitting functional layer includes an anode layer disposed on the array substrate, a light-emitting layer disposed on the anode layer, and a cathode layer disposed on the light-emitting layer. The light-emitting layer includes a plurality of light-emitting devices. The semi-transmissive and semi-reflective layer is disposed on at least one side of the light-emitting functional layer. Among them, the orthographic projection of the light-emitting device on the semi-transmissive and semi-reflective layer is located within the semi-transmissive and semi-reflective layer; in the present application, the semi-transmissive and semi-reflective layer is disposed on at least one side of the light-emitting functional layer, and the orthographic projection on the semi-transmissive and semi-reflective layer is located within the semi-transmissive and semi-reflective layer, so that a part of the light emitted by the light-emitting device is transmitted through the semi-transmissive and semi-reflective layer, and the other part is reflected by the semi-transmissive and semi-reflective layer, so that these two parts of light are respectively emitted through the direction away from the array substrate of the light-emitting device and the direction close to the substrate of the light-emitting device, thereby enabling the double-sided display panel to achieve ultra-thin double-sided display, and further reducing the manufacturing cost of the double-sided display panel. Description of the Drawings

[0025] The following combines the drawings and describes the technical solutions and other beneficial effects of the present application in detail through the specific embodiments of the present application, which will be obvious.

[0026] Figure 1 It is the first cross-sectional view of the double-sided display panel of the present application;

[0027] Figure 2 It is the second cross-sectional view of the double-sided display panel of the present application;

[0028] Figure 3 It is the third cross-sectional view of the double-sided display panel of the present application;

[0029] Figure 4 It is the fourth cross-sectional view of the double-sided display panel of the present application;

[0030] Figure 5 It is the flowchart of the preparation method of the double-sided display panel of the present application;

[0031] Figures 6A - 6E It is the structural schematic diagram of the preparation method of the double-sided display panel of the present application. Detailed Embodiments

[0032] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application.

[0033] Please refer to Figures 1 to 4 , the present application discloses a double-sided display panel 100 and a mobile terminal; the double-sided display panel 100 includes an array substrate, a light-emitting functional layer 300, and a transflective layer 200. The light-emitting functional layer 300 includes an anode layer 310 disposed on the array substrate, a light-emitting layer 320 disposed on the anode layer 310, and a cathode layer 330 disposed on the light-emitting layer 320. The light-emitting layer 320 includes a plurality of light-emitting devices. The transflective layer 200 is disposed on at least one side of the light-emitting functional layer 300;

[0034] Wherein, the orthographic projection of the light-emitting device on the transflective layer 200 is located within the transflective layer 200.

[0035] In the present application, the transflective layer 200 is disposed on at least one side of the light-emitting functional layer 300, and the orthographic projection on the transflective layer 200 is located within the transflective layer 200, so that a part of the light emitted by the light-emitting device is transmitted through the transflective layer 200, and the other part is reflected by the transflective layer 200, so that these two parts of light are respectively emitted through the direction away from the substrate 110 of the light-emitting device and the direction close to the substrate 110 of the light-emitting device, thereby enabling the double-sided display panel 100 to achieve ultra-thin double-sided display, and further reducing the manufacturing cost of the double-sided display panel 100.

[0036] Now, the technical solutions of the present application will be described in combination with specific embodiments.

[0037] Please refer to Figure 1 , Figure 1 is the first cross-sectional view of the double-sided display panel 100 of the present application. The double-sided display panel 100 includes an array substrate, a light-emitting functional layer 300, and a transflective layer 200. The light-emitting functional layer 300 includes an anode layer 310 disposed on the array substrate, a light-emitting layer 320 disposed on the anode layer 310, and a cathode layer 330 disposed on the light-emitting layer 320. The light-emitting layer 320 includes a plurality of light-emitting devices. The transflective layer 200 is disposed on at least one side of the light-emitting functional layer 300;

[0038] Among them, the orthographic projection of the light-emitting device on the semi-transmissive and semi-reflective layer 200 is located within the semi-transmissive and semi-reflective layer 200.

[0039] In this embodiment, the array substrate may include a substrate 110 and thin-film transistors located on the substrate.

[0040] In this embodiment, the material of the substrate 110 may be prepared from materials such as glass, quartz, or polyimide. The thin-film transistor layer may include a plurality of thin-film transistors.

[0041] In this embodiment, the thin-film transistor may have structures such as an etch-stop type or a back-channel etch type, and there is no specific limitation.

[0042] In the double-sided display panel 100 of the present application, please refer to Figure 1 , the thin-film transistor may include:

[0043] A light-shielding layer 120, the light-shielding layer 120 is disposed on the substrate 110, the light-shielding layer 120 includes a first light-shielding layer 121 and a second light-shielding layer 122 that are in the same layer and are insulated from each other. The first light-shielding layer 121 and the second light-shielding layer 122 are used to block external light from entering the thin-film transistor from the bottom. The material of the light-shielding layer 120 may be composed of a black light-shielding material, such as black light-shielding metal or black organic material, etc.

[0044] A buffer layer 130, the buffer layer 130 is disposed on the light-shielding layer 120, the buffer layer 130 is used to isolate the light-shielding layer 120 and the upper metal material. The material of the buffer layer 130 may include a compound composed of nitrogen element, silicon element, and oxygen element, such as a single-layer silicon oxide film layer, or a stacked structure of silicon oxide - silicon nitride.

[0045] An active layer 140, the active layer 140 is disposed on the buffer layer 130, the material of the active layer 140 may be IGZO (indium gallium zinc oxide), a-Si (amorphous silicon), or LTPS (low-temperature polycrystalline silicon). For example, the material of the active layer 140 in the present application may be a-Si.

[0046] A gate insulating layer 150, the gate insulating layer 150 is disposed on the active layer 140, and the gate insulating layer 150 covers the active layer 140.

[0047] A first metal layer 160, the first metal layer 160 is disposed on the gate insulating layer 150, the first metal layer 160 may include a plurality of gate lines and the gate electrodes of the thin-film transistors. The material of the first metal layer 160 may be copper, molybdenum, or molybdenum-titanium alloy, etc.

[0048] Interlayer insulating layer 170, the interlayer insulating layer 170 is disposed on the buffer layer 130, the interlayer insulating layer 170 is laid in a whole layer, the interlayer insulating layer 170 includes a first via 1701, a second via 1702, a third via 1703 and a fourth via 1704, the first via 1701 and the fourth via 1704 penetrate through the interlayer insulating layer 170 and a part of the buffer layer 130 to expose the light-shielding layer 120, and the second via 1702 and the third via 1703 penetrate through a part of the interlayer insulating layer 170 to expose a part of the active layer 140; the material of the interlayer insulating layer 170 may be an inorganic substance of a combination of silicon oxynitride or an organic material having flatness.

[0049] Second metal layer 180, the second metal layer 180 is disposed on the interlayer insulating layer 170, the second metal layer 180 may include a plurality of data lines 181, a source electrode 183 constituting the thin film transistor and a drain electrode 182 constituting the thin film transistor. Wherein, the data line 181 is electrically connected to the first light-shielding layer 121 through the first via 1701; the drain electrode 182 is electrically connected to one end of the active layer 140 through the second via 1702; the source electrode 183 is electrically connected to the other end of the active layer 140 through the third via 1703, and the source electrode 183 is also electrically connected to the second light-shielding layer 122 through the fourth via 1704.

[0050] In this embodiment, the material of the second metal layer 180 may be copper or a molybdenum-titanium alloy, such as copper or titanium.

[0051] Passivation layer 190, the passivation layer 190 is disposed on the interlayer insulating layer 170, the passivation layer 190 is laid in a whole layer, and the material of the passivation layer 190 may be an inorganic substance of a combination of silicon oxynitride or an organic material having flatness.

[0052] Planarization layer 1100, the planarization layer 1100 is disposed on the passivation layer 190, the planarization layer 1100 is laid in a whole layer, the planarization layer 1100 includes a plurality of fifth vias 1101, and the fifth vias 1101 expose a part of the source electrode 183; the material of the planarization layer 1100 may be an inorganic substance of a combination of silicon oxynitride or an organic material having flatness.

[0053] In an embodiment of the present application, the planarization layer 1100 is provided with a groove 1102, and the groove 1102 corresponds to each of the light-emitting devices.

[0054] The semi-transmissive and semi-reflective layer 200, the semi-transmissive and semi-reflective layer 200 is embedded in the planarization layer 1100.

[0055] A pixel electrode layer 1120 is disposed on the planarization layer 1100. The pixel electrode layer 1120 fills the fifth via hole 1101, and the pixel electrode layer 1120 is electrically connected to the source electrode 183 through the fifth via hole 1101. The material of the pixel electrode layer 1120 may be composed of a transparent conductive material such as indium tin oxide.

[0056] A first pixel defining layer 1110 is disposed on the planarization layer 1100, and both ends of the first pixel defining layer 1110 are in contact with the pixel electrode layer 1120.

[0057] A second pixel defining layer 1130 is disposed on a part of the first pixel defining layer 1110 and a part of the pixel electrode layer 1120. The second pixel defining layer 1130 has an opening that exposes the pixel electrode layer 1120.

[0058] In an embodiment of the present application, the materials of the first pixel defining layer 1110 and the second pixel defining layer 1130 are both organic transparent materials.

[0059] In an embodiment of the present application, the light-emitting functional layer 300 is disposed in the opening. The light-emitting functional layer 300 includes an anode layer 310 disposed on the array substrate, a light-emitting layer 320 disposed on the anode layer 310, and a cathode layer 330 disposed on the light-emitting layer 320. The light-emitting layer 320 includes a plurality of light-emitting devices. The transflective layer 200 is disposed on at least one side of the light-emitting functional layer 300.

[0060] Wherein, the orthographic projection of the light-emitting device on the transflective layer 200 is located within the transflective layer 200.

[0061] In an embodiment of the present application, both the anode layer 310 and the cathode layer 330 are transparent conductive materials.

[0062] In an embodiment of the present application, the double-sided display panel 100 further includes a packaging layer 400. The packaging layer 400 is disposed on the second pixel defining layer 1130, and the packaging layer 400 is used to block the erosion of the outside water and oxygen on the light-emitting functional layer 300.

[0063] In an embodiment of the present application, the buffer layer 130, the interlayer insulating layer 170, and the passivation layer 190 are all composed of transparent inorganic materials, and the planarization layer 1100 is composed of a transparent organic material. Such a setting helps to achieve the double-sided display of the double-sided display panel 100.

[0064] Further, in the embodiment of the present application, a groove 1102 is provided in one of the buffer layer 130, the interlayer insulating layer 170, the passivation layer 190, and the planarization layer 1100, and the semi-transmissive semi-reflective layer 200 fills the groove 1102. By setting it in this way, the brightness of the light emitted by the light-emitting functional layer 300 in the direction of the substrate 110 can be adjusted by adjusting the distance between the semi-transmissive semi-reflective layer 200 and the light-emitting functional layer 300.

[0065] In the embodiment of the present application, the semi-transmissive semi-reflective layer 200 is formed by stacking one of a titanium dioxide thin film and a niobium pentoxide thin film with a silicon dioxide thin film. Among them, the refractive index of the niobium pentoxide thin film is 2.3, the refractive index of the titanium dioxide thin film is 1.46, and the refractive index of the titanium dioxide thin film is 2.25.

[0066] Since the semi-transmissive semi-reflective layer 200 is a multi-layer stacked structure, and the higher the refractive index of different thin film materials, the lower the light transmittance; the transmission ratio and reflection ratio of the light passing through the semi-transmissive semi-reflective layer 200 can be adjusted by adjusting the ratio of the thickness of the thin film of the high refractive index material to the thickness of the thin film of the low refractive index material.

[0067] In the embodiment of the present application, part of the light emitted by the light-emitting device passes through the semi-transmissive semi-reflective layer 200, and the other part is reflected by the semi-transmissive semi-reflective layer 200;

[0068] Among them, the proportion of the luminous flux of the light emitted by the light-emitting device transmitted by the semi-transmissive semi-reflective layer 200 in the total luminous flux of the light emitted by the light-emitting device ranges from 10% to 90%.

[0069] In another embodiment of the present application, the semi-transmissive semi-reflective layer 200 is disposed on the side of the light-emitting functional layer 300 away from the array substrate; such a design can enable the bottom-emitting organic display panel to achieve double-sided transparent display.

[0070] Taking the first embodiment of the present application as an example, the principle of the double-sided display panel 100 to achieve double-sided display is as follows:

[0071] Since the array substrate in the dual-sided display panel 100 includes a plurality of transparent inorganic film layers and a plurality of transparent organic film layers, and the anode and the cathode are prepared from a transparent conductive material; thus, when the transflective layer 200 is embedded in the array substrate, and the orthographic projection of the light-emitting device on the transflective layer 200 is located within the transflective layer 200, the transflective layer 200 can transmit a part of the light emitted by the light-emitting device to the substrate 110 along the first direction D1, and at the same time, the transflective layer 200 can reflect another part of the light emitted by the light-emitting device to the substrate 110 along the second direction D2, thereby realizing the transparent dual-sided display of the dual-sided display panel 100.

[0072] Aiming at the technical problems of the existing dual-sided display panel 100 with large thickness and high cost, the embodiment of the present application provides a dual-sided display panel 100; the dual-sided display panel 100 includes an array substrate, a light-emitting functional layer 300 and a transflective layer 200, the light-emitting functional layer 300 includes an anode layer 310 disposed on the array substrate, a light-emitting layer 320 disposed on the anode layer 310, and a cathode layer 330 disposed on the light-emitting layer 320, the light-emitting layer 320 includes a plurality of light-emitting devices, the transflective layer 200 is embedded in the array substrate, wherein the orthographic projection of the light-emitting device on the transflective layer 200 is located within the transflective layer 200; the present application disposes the transflective layer 200 on at least one side of the light-emitting functional layer 300, and the orthographic projection on the transflective layer 200 is located within the transflective layer 200, so that a part of the light emitted by the light-emitting device passes through the transflective layer 200 and is transmitted out, and another part is reflected by the transflective layer 200, so that these two parts of light are respectively emitted through the direction away from the array substrate of the light-emitting device and the direction close to the substrate 110 of the light-emitting device, thereby enabling the dual-sided display panel 100 to achieve ultra-thin dual-sided display and further reducing the manufacturing cost of the dual-sided display panel 100.

[0073] Embodiment 2

[0074] Please refer to Figure 2 , Figure 2 which is the second sectional view of the dual-sided display panel 100 of the present application; Figure 2It can be seen that the structure of the double-sided display panel 100 in the second embodiment of the present application is mostly the same as that of the double-sided display panel 100 in the first embodiment of the present application. The difference lies only in that the transflective layer 200 includes a first transflective layer 210 and a second transflective layer 220. The first transflective layer 210 is embedded in the array substrate, and the second transflective layer 220 is disposed on the side of the light-emitting device away from the array substrate;

[0075] Wherein, the orthographic projection of the second transflective layer 220 on the first transflective layer 210 is located within the first transflective layer 210.

[0076] Compared with the first embodiment of the present application, in the second embodiment of the present application, the second transflective layer 220 is disposed on the side of the light-emitting functional layer 300 away from the substrate 110; the second transflective layer 220 can transmit a part of the light emitted by the light-emitting device along the second direction D2 along the second direction D2, and at the same time, the second transflective layer 220 can reflect another part of the light emitted by the light-emitting device along the second direction D2 along the first direction D1, thereby achieving the effect of enhancing the brightness of the light emitted on both sides of the double-sided display panel 100 by the light-emitting functional layer 300.

[0077] Embodiment Three

[0078] Please refer to Figure 3 , Figure 3 which is the third cross-sectional view of the double-sided display panel 100 of the present application; it can be seen from Figure 3 that the structure of the double-sided display panel 100 in the third embodiment of the present application is mostly the same as that of the double-sided display panel 100 in the first embodiment of the present application. The difference lies only in that the light-emitting device includes a first sub-pixel unit 301 that displays a first color, a second sub-pixel unit 302 that displays a second color, and a third sub-pixel unit 303 that displays a third color;

[0079] Wherein, the transflective layer 200 includes a third transflective layer 230, a fourth transflective layer 240, and a fifth transflective layer 250. The fourth transflective layer 240 includes a first sub-transflective layer 241 and a second sub-transflective layer 242. The fifth transflective layer 250 includes a third sub-transflective layer 251 and a fourth sub-transflective layer 252;

[0080] Among them, the orthographic projection of the first sub-pixel unit 301 on the third transflective layer 230 is located within the third transflective layer 230. The second sub-pixel unit 302 is located between the first sub-transflective layer 241 and the second sub-transflective layer 242. The third sub-pixel unit 303 is located between the third sub-transflective layer 251 and the fourth sub-transflective layer 252.

[0081] Compared with the second embodiment, in the embodiment of the present application, the pixel units of different colors in the light-emitting device have different light-emitting intensities. The light-emitting intensity of the first sub-pixel unit 301 is stronger than that of the second sub-pixel unit 302 or the third sub-pixel unit 303. Therefore, a transflective film is correspondingly provided for the first sub-pixel unit 301, and two transflective films are correspondingly provided for both the second sub-pixel unit 302 and the third sub-pixel unit 303, so as to reduce the brightness difference between the pixel units of different colors in the light-emitting device.

[0082] Embodiment 4

[0083] Please refer to Figure 4 , Figure 4 which is the fourth sectional view of the double-sided display panel 100 of the present application. It can be seen from Figure 4 that the structure of the double-sided display panel 100 in the fourth embodiment of the present application is mostly the same as that of the double-sided display panel 100 in the third embodiment of the present application. The difference is only that the first sub-transflective layer 241 and the third sub-transflective layer 251 are both provided on the side of the light-emitting device away from the array substrate, and the second sub-transflective layer 242 and the fourth sub-transflective layer 252 are both embedded in the array substrate.

[0084] Among them, the distance between the first sub-transflective layer 241 and the second sub-transflective layer 242 is smaller than the distance between the third sub-transflective layer 251 and the fourth sub-transflective layer 252.

[0085] Compared with Embodiment 3, in the embodiment of the present application, the pixel units of different colors in the light-emitting device have different light-emitting intensities. The light-emitting intensity of the first sub-pixel unit 301 is stronger than that of the second sub-pixel unit 302 or the third sub-pixel unit 303, and the light-emitting intensity of the second sub-pixel unit 302 is less than that of the third sub-pixel unit 303. Therefore, a semi-transmissive and semi-reflective film is correspondingly provided for the first sub-pixel unit 301, and two semi-transmissive and semi-reflective films are correspondingly provided for both the second sub-pixel unit 302 and the third sub-pixel unit 303, so that the light emitted by the second sub-pixel unit 302 and the third sub-pixel unit 303 is reflected multiple times between the two semi-transmissive and semi-reflective films. At the same time, since the distance between the first semi-transmissive and semi-reflective layer 241 and the second semi-transmissive and semi-reflective layer 242 is less than the distance between the third semi-transmissive and semi-reflective layer 251 and the fourth semi-transmissive and semi-reflective layer 252, the fourth semi-transmissive and semi-reflective layer 240 increases the light-emitting brightness of the second sub-pixel unit 302 more than the fifth semi-transmissive and semi-reflective layer 250 increases the light-emitting brightness of the third sub-pixel unit 303, thereby making the brightness between the pixel units of different colors in the light-emitting device tend to be the same, and further improving the display quality of the double-sided display panel 100.

[0086] Please refer to Figure 5 , the present application also proposes a manufacturing method of the double-sided display panel 100 (taking Embodiment 1 of the present application as an example). The manufacturing method of the double-sided display panel 100 includes:

[0087] S10. Provide a substrate;

[0088] The material of the substrate 110 can be prepared from materials such as glass, quartz or polyimide.

[0089] S20. Form multiple film layers of thin-film transistors on the substrate 110;

[0090] Please refer to Figure 6A , first, a light-shielding layer 120 is provided on the substrate 110. The light-shielding layer 120 includes a first light-shielding layer 121 and a second light-shielding layer 122 that are in the same layer and are insulated from each other. The first light-shielding layer 121 and the second light-shielding layer 122 are used to block external light from entering the thin-film transistor from the bottom. The material of the light-shielding layer 120 can be composed of a black light-shielding material, such as a black light-shielding metal or a black organic material, etc.

[0091] After that, a buffer layer 130 is provided on the light-shielding layer 120. The buffer layer 130 is used to isolate the light-shielding layer 120 from the upper metal material. The material of the buffer layer 130 may include a compound composed of nitrogen, silicon, and oxygen elements, such as a single-layer silicon oxide film layer or a stacked structure of silicon oxide - silicon nitride.

[0092] After that, an active layer 140 is provided on the buffer layer 130. The material of the active layer 140 may be IGZO (indium gallium zinc oxide), a-Si (amorphous silicon), or LTPS (low-temperature polycrystalline silicon). For example, the material of the active layer 140 in this application may be a-Si.

[0093] After that, a gate insulating layer 150 is provided on the active layer 140. The gate insulating layer 150 covers the active layer 140.

[0094] After that, a first metal layer 160 is provided on the gate insulating layer 150. The first metal layer 160 may include multiple gate lines and the gate of the thin-film transistor. The material of the first metal layer 160 may be copper, molybdenum, or a molybdenum-titanium alloy, etc.

[0095] After that, an interlayer insulating layer 170 is provided on the buffer layer 130. The interlayer insulating layer 170 is laid as a whole layer. The interlayer insulating layer 170 includes a first via 1701, a second via 1702, a third via 1703, and a fourth via 1704. The first via 1701 and the fourth via 1704 penetrate through the interlayer insulating layer 170 and part of the buffer layer 130 to expose the light-shielding layer 120. The second via 1702 and the third via 1703 penetrate through part of the interlayer insulating layer 170 to expose part of the active layer 140. The material of the interlayer insulating layer 170 may be an inorganic substance composed of a combination of silicon, nitrogen, and oxygen or a planar organic material.

[0096] Then, a second metal layer 180 is provided on the interlayer insulating layer 170. The second metal layer 180 may include multiple data lines 181, the source electrode 183 of the thin-film transistor, and the drain electrode 182 of the thin-film transistor. Among them, the data line 181 is electrically connected to the first light-shielding layer 121 through the first via 1701; the drain electrode 182 is electrically connected to one end of the active layer 140 through the second via 1702; the source electrode 183 is electrically connected to the other end of the active layer 140 through the third via 1703, and the source electrode 183 is also electrically connected to the second light-shielding layer 122 through the fourth via 1704.

[0097] In this embodiment, the material of the second metal layer 180 may be copper or a molybdenum-titanium alloy, copper or titanium, etc.

[0098] After that, a passivation layer 190 is disposed on the interlayer insulating layer 170. The passivation layer 190 is laid as a whole layer, and the material of the passivation layer 190 may be an inorganic substance of a silicon oxynitride combination or an organic material with flatness.

[0099] Finally, a planarization layer 1100 is disposed on the passivation layer 190. The planarization layer 1100 is laid as a whole layer. The planarization layer 1100 includes a plurality of fifth vias 1101, and the fifth vias 1101 expose part of the source electrode 183; the material of the planarization layer 1100 may be an inorganic substance of a silicon oxynitride combination or an organic material with flatness.

[0100] In the embodiment of the present application, the planarization layer 1100 is provided with a groove 1102, and the groove 1102 corresponds to each of the light-emitting devices.

[0101] S30. Form a semi-transmissive and semi-reflective layer 200 on the substrate 110;

[0102] Please refer to Figure 6B , and by using a sputtering film formation method, form the semi-transmissive and semi-reflective layer 200 in the groove 1102; wherein, the semi-transmissive and semi-reflective layer 200 is composed of one of a titanium dioxide thin film and a niobium pentoxide thin film stacked with a silicon dioxide thin film. Among them, the refractive index of the niobium pentoxide thin film is 2.3, the refractive index of the titanium dioxide thin film is 1.46, and the refractive index of the silicon dioxide thin film is 2.25.

[0103] Since the semi-transmissive and semi-reflective layer 200 is a multi-layer stack structure, and the higher the refractive index of different thin film materials, the lower the light transmittance; the transmission ratio and reflection ratio of the light after passing through the semi-transmissive and semi-reflective layer 200 can be adjusted by adjusting the ratio between the thickness of the thin film of the high refractive index material and the thickness of the thin film of the low refractive index material.

[0104] S40. Form a first pixel defining layer 1110 and a second pixel defining layer 1130 on the planarization layer 1100 in sequence;

[0105] Please refer to Figure 6C , first form a first pixel defining layer 1110 on the planarization layer 1100, and a first opening structure is provided in the first pixel defining layer 1110;

[0106] After that, a pixel electrode layer 1120 is prepared in the first opening structure;

[0107] Finally, a second pixel defining layer 1130 is prepared on the planarization layer 1100, and the second pixel defining layer 1130 has a second opening structure.

[0108] S50. Form a light-emitting functional layer 300 within the second opening structure corresponding to the second pixel definition layer 1130;

[0109] Please refer to Figure 6D , first, form a light-emitting functional layer 300 within the second opening structure corresponding to the second pixel definition layer 1130; the light-emitting functional layer 300 includes an anode layer 310 disposed on the array substrate, a light-emitting layer 320 disposed on the anode layer 310, and a cathode layer 330 disposed on the light-emitting layer 320, and the light-emitting layer 320 includes a plurality of light-emitting devices;

[0110] Among them, the orthographic projection of the light-emitting device on the transflective layer 200 is located within the transflective layer 200.

[0111] S60. Form a packaging layer 400 on the first pixel definition layer 1110;

[0112] Please refer to Figure 6E , form a packaging layer 400 on the first pixel definition layer 1110, and the packaging layer 400 is used to block the erosion of the external water and oxygen on the light-emitting functional layer 300.

[0113] This application also proposes a mobile terminal, which includes a terminal body and the above display panel, and the terminal body and the display panel are combined as one. The terminal body can be a device such as a circuit board bound to the display panel. The mobile terminal can include electronic devices such as mobile phones, televisions, and laptop computers.

[0114] The present application discloses a double-sided display panel 100 and a mobile terminal; the double-sided display panel 100 includes an array substrate, a light-emitting functional layer 300, and a transflective layer 200. The light-emitting functional layer 300 includes an anode layer 310 disposed on the array substrate, a light-emitting layer 320 disposed on the anode layer 310, and a cathode layer 330 disposed on the light-emitting layer 320. The light-emitting layer 320 includes a plurality of light-emitting devices. The transflective layer 200 is disposed on at least one side of the light-emitting functional layer 300. Wherein, the orthographic projection of the light-emitting device on the transflective layer 200 is located within the transflective layer 200. In the present application, the transflective layer 200 is disposed on at least one side of the light-emitting functional layer 300, and the orthographic projection on the transflective layer 200 is located within the transflective layer 200, so that a part of the light emitted by the light-emitting device passes through the transflective layer 200 and is transmitted out, and the other part is reflected by the transflective layer 200, so that these two parts of light are respectively emitted through the direction away from the array substrate of the light-emitting device and the direction close to the substrate 110 of the light-emitting device, thereby enabling the double-sided display panel 100 to achieve ultra-thin double-sided display and further reducing the manufacturing cost of the double-sided display panel 100. In the above embodiments, the descriptions of the respective embodiments have their own emphases. For parts not detailed in a certain embodiment, reference may be made to the relevant descriptions of other embodiments.

[0115] The above has introduced in detail a double-sided display panel 100 and a mobile terminal provided by the embodiments of the present application. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the technical solution and its core idea of the present application; those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A double-sided display panel, characterized in that, it includes: an array substrate; The array substrate includes: a substrate; a buffer layer disposed on the substrate; an interlayer insulating layer disposed on the buffer layer; a passivation layer disposed on the interlayer insulating layer; and a planarization layer disposed on the passivation layer; a light-emitting functional layer including an anode layer disposed on the array substrate, a light-emitting layer disposed on the anode layer, and a cathode layer disposed on the light-emitting layer, the light-emitting layer including a plurality of light-emitting devices; a transflective layer disposed on at least one side of the light-emitting functional layer; wherein, the orthographic projection of the light-emitting device on the transflective layer is located within the transflective layer, and one of the buffer layer, the interlayer insulating layer, the passivation layer, and the planarization layer is provided with a groove, the groove is provided corresponding to each light-emitting device, the transflective layer fills the groove, and the top surface of the transflective layer is flush with the top surface of the groove.

2. The double-sided display panel according to claim 1, characterized in that, the buffer layer, the interlayer insulating layer, and the passivation layer are all composed of transparent inorganic materials, and the planarization layer is composed of transparent organic materials.

3. The double-sided display panel according to claim 1, characterized in that, the transflective layer includes a first transflective layer and a second transflective layer, the first transflective layer is embedded in the array substrate, and the second transflective layer is disposed on the side of the light-emitting device away from the array substrate; wherein, the orthographic projection of the second transflective layer on the first transflective layer is located within the first transflective layer.

4. The double-sided display panel according to claim 1, characterized in that, the light-emitting device includes a first sub-pixel unit for displaying a first color, a second sub-pixel unit for displaying a second color, and a third sub-pixel unit for displaying a third color; wherein, the transflective layer includes a third transflective layer, a fourth transflective layer, and a fifth transflective layer, the fourth transflective layer includes a first sub-transflective layer and a second sub-transflective layer, and the fifth transflective layer includes a third sub-transflective layer and a fourth sub-transflective layer; wherein, the orthographic projection of the first sub-pixel unit on the third transflective layer is located within the third transflective layer, the second sub-pixel unit is located between the first sub-transflective layer and the second sub-transflective layer, and the third sub-pixel unit is located between the third sub-transflective layer and the fourth sub-transflective layer.

5. The double-sided display panel according to claim 4, characterized in that, both the first sub-transflective layer and the third sub-transflective layer are disposed on the side of the light-emitting device away from the array substrate, and both the second sub-transflective layer and the fourth sub-transflective layer are embedded in the array substrate; wherein, the distance between the first sub-transflective layer and the second sub-transflective layer is less than the distance between the third sub-transflective layer and the fourth sub-transflective layer.

6. The double-sided display panel according to claim 1, characterized in that, The semi-transmissive and semi-reflective layer is formed by stacking one of a titanium dioxide thin film and a niobium pentoxide thin film with a silicon dioxide thin film.

7. The double-sided display panel according to claim 1, wherein, a part of the light emitted by the light-emitting device passes through the semi-transmissive and semi-reflective layer, and another part is reflected by the semi-transmissive and semi-reflective layer; wherein, the proportion of the luminous flux of the light emitted by the light-emitting device transmitted by the semi-transmissive and semi-reflective layer in the total luminous flux of the light emitted by the light-emitting device ranges between 10% and 90%.

8. A mobile terminal, wherein, it includes a terminal body and the double-sided display panel according to any one of claims 1 to 7, and the terminal body and the double-sided display panel are combined as a whole.

Images