Plasma generation device and substrate processing device

Abstract

The plasma generation device of the present application has an electrode group and a dielectric. The dielectric has a first main surface and a second main surface opposite the first main surface. The electrode group is sealed by the dielectric and includes at least one first electrode and at least one second electrode alternately arranged in an arrangement surface parallel to the first main surface, so that an electric field generated by applying a high-frequency voltage between the first electrode 21a and the second electrode 21b acts on the outside of the first main surface 3a.

Description

TECHNICAL FIELD

[0001] The present application relates to a plasma generation device and a substrate processing device. BACKGROUND

[0002] Conventionally, a technique has been proposed in which an electric field is generated around a pair of electrodes by applying a high-frequency voltage between the electrodes, and a gas is plasma- ized using the electric field (for example, Patent Literature 1).

[0003] In Patent Literature 1, a plasma generation device includes a first electrode, a plurality of second electrodes, an insulator, and an insulating layer. The insulator has a rectangular parallelepiped shape. The first electrode is embedded in the inside of the insulator. The first electrode has a flat plate shape, and is embedded in the inside of the insulator in a parallel posture on one main surface of the insulator. The plurality of second electrodes are arranged on the one main surface of the insulator with spaces therebetween. In this configuration, the second electrodes each face the first electrode in a facing direction orthogonal to the one main surface of the insulator. The insulating layer is provided on the one main surface of the insulator, and covers the plurality of second electrodes. If the insulator and the insulating layer are regarded as an insulating portion as a whole, the first electrode and the second electrodes are embedded in the insulating portion.

[0004] One main surface of the insulating layer is in close contact with the insulator and the second electrodes. The other main surface of the insulating layer faces a gas, and hereinafter, the other main surface is also referred to as a plasma generation surface. The plasma generation surface is parallel to the first electrode. That is, the plasma generation surface is orthogonal to the facing direction in which the first electrode and the second electrodes face each other.

[0005] A high-frequency voltage is applied to the first electrode and the second electrodes. By applying the voltage, an electric field is generated around the first electrode and the second electrodes. The electric field is generated more strongly between the first electrode and the second electrodes, but is also generated around the first electrode and the second electrodes. Since the electric field is also generated outside the plasma generation surface, the electric field acts on the gas to plasma- ize the gas. In this way, the plasma generation device can generate plasma.

[0006] PRIOR ART DOCUMENTS

[0007] PATENT LITERATURE

[0008] Patent Literature 1: Japanese Patent Application Publication No. 2014-222664 SUMMARY

[0009] [PROBLEMS TO BE SOLVED BY THE INVENTION]

[0010] In the technology of Patent Document 1, the plasma generating surface is orthogonal to the opposing directions of the first and second electrodes, and is located on the opposite side of the first electrode relative to the second electrode. In this configuration, the electric field strength on the plasma generating surface side is relatively low because the path of the electric field lines through a space further out than the plasma generating surface is longer. Specifically, the electric field lines extend temporarily from the second electrode to the opposite side of the first electrode, passing further out than the plasma generating surface, and then bend into a U-shape to reach the first electrode. This longer path of the electric field lines reduces the electric field strength on the plasma generating surface side. Therefore, to increase the electric field strength on the plasma generating surface side, the high-frequency voltage amplitude between the first and second electrodes must be increased. That is, a more expensive high-frequency power supply is required.

[0011] Therefore, the object of the present invention is to provide a plasma generating device that can generate plasma with a relatively low voltage.

[0012] [Technical means to solve the problem]

[0013] The first state of the plasma generating apparatus is a plasma generating apparatus for generating plasma, and includes: a dielectric material having a first main surface and a second main surface opposite to the first main surface; and an electrode group sealed by the dielectric material, comprising at least one first electrode and at least one second electrode arranged alternately in an arrangement plane parallel to the first main surface, and such that an electric field generated by applying a high-frequency voltage between the first electrode and the second electrode acts on an outer side beyond the first main surface.

[0014] The second state of the plasma generating device is the same as the first state of the plasma generating device, wherein the spacing between the electrode group and the first main surface is narrower than the spacing between the electrode group and the second main surface.

[0015] The third state of the plasma generating device is a plasma generating device of the first or second state, wherein the dielectric material includes a first dielectric component having the first main surface and a second dielectric component having the second main surface, and the dielectric constant of the first dielectric component is lower than the dielectric constant of the second dielectric component.

[0016] The fourth state of the plasma generating device is any one of the first to third states of the plasma generating device, wherein the first electrode and the second electrode are cylindrical.

[0017] The first state of the substrate processing apparatus is a substrate processing apparatus for processing a substrate, and includes a holding mechanism for holding the substrate and a plasma generation device for any one of the first to fourth states.

[0018] The substrate processing apparatus, in which the second state is the same as the first state, further comprises: a first nozzle, which supplies a processing solution containing at least one of sulfuric acid, sulfate, persulfate, and persulfate to the main surface of the substrate held in the holding mechanism, so that plasma generated by the plasma generating device acts on the processing solution.

[0019] The substrate processing apparatus, whose third state is either the first or second state, further includes: a second nozzle for supplying plasma gas between the plasma generating apparatus and the substrate held by the holding mechanism.

[0020] [The effects of the invention]

[0021] According to the first configuration of the plasma generating apparatus, the first electrode and the second electrode are arranged in an alignment plane parallel to the first main surface. Therefore, the length of the electric field lines connecting the first and second electrodes through the outer space from the first main surface of the dielectric can be relatively shortened. Consequently, the electric field strength within the space can be increased, and the gas in the space can be easily plasmaized. In other words, even with a relatively low high-frequency voltage, an electric field of appropriate strength can be generated within the space, enabling plasma generation within that space.

[0022] According to the second state of the plasma generating device, since the gap between the first main surface of the dielectric and the electrode group is narrow, it is easy to generate an electric field on the outer side of the first main surface, and it is easy to plasma the gas in the space on the outer side of the first main surface.

[0023] According to the third state of the plasma generating device, since the dielectric constant of the component between the first main surface of the dielectric and the electrode group is small, it is easy to generate an electric field on the outer side of the first main surface, and it is easy to plasma the gas in the space on the outer side of the first main surface.

[0024] According to the fourth state of the plasma generating device, the electric field lines are easily bent, and an electric field is widely formed in the space outside the first main surface. Therefore, the irradiation range of the plasma (the range of plasma formation) can be expanded.

[0025] According to the first state sample of the substrate processing device, substrate processing using plasma can be performed with low power consumption.

[0026] According to the second state of the substrate processing apparatus, free radicals with strong oxidizing power are generated in the processing solution. Therefore, substrate processing using the oxidizing power of the processing solution can be performed effectively.

[0027] According to the third state of the substrate processing device, plasma can be easily generated. Attached Figure Description

[0028] Figure 1This is a top view schematically illustrating an example of the configuration of a plasma generating device.

[0029] Figure 2 This is a cross-sectional view schematically illustrating an example of the configuration of a plasma generating device.

[0030] Figure 3 This is a cross-sectional view schematically illustrating an example of the configuration of a plasma generating device.

[0031] Figure 4 This is a diagram schematically illustrating one example of the configuration of a plasma generating apparatus for a comparative example.

[0032] Figure 5 This is a top view schematically illustrating another example of the configuration of a plasma generating device.

[0033] Figure 6 This is a top view that schematically illustrates another example of the configuration of an electrode group.

[0034] Figure 7 This is another example of a schematic diagram illustrating the configuration of a substrate processing system.

[0035] Figure 8 This is a top view that schematically illustrates an example of the structure of the control unit.

[0036] Figure 9 This is another example of the configuration of a substrate processing apparatus. Detailed Implementation

[0037] The following is a reference to the appendix. Figure 1 The embodiments are described below. Furthermore, the constituent elements described in the embodiments are merely illustrative and are not intended to limit the scope of the invention. For ease of understanding, the dimensions and number of parts are sometimes exaggerated or simplified in the accompanying drawings as needed.

[0038] Expressions indicating relative or absolute positional relationships (e.g., "in a direction," "along a direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.) unless otherwise stated, not only strictly indicate the positional relationship but also indicate a state of angular or dimensional displacement within tolerance or to achieve the same level of functionality. Expressions indicating equal states (e.g., "same," "equal," "homogeneous," etc.) unless otherwise stated, not only quantitatively and strictly indicate equal states but also indicate a state with tolerance or a difference to achieve the same level of functionality. Expressions indicating shape (e.g., "quadrilateral" or "cylindrical") unless otherwise stated, not only geometrically and strictly indicate its shape but also, within the range to achieve the same level of effect, a shape with concavity, convexity, or chamfers. Expressions that refer to a constituent element as "comprising," "including," "possessing," "containing," or "having" are not exclusive expressions excluding the existence of other constituent elements. Expressions that physically combine components (e.g., "connected") include not only direct combinations of two components but also combinations via other components. The statement “at least one of A, B and C” includes only A, only B, only C, any two of A, B and C, and all of A, B and C.

[0039] <First Implementation>

[0040] Figure 1 This is a top view schematically illustrating an example of the configuration of the plasma generating device 1. Figure 2 This is a cross-sectional view schematically showing an example of the configuration of the plasma generating device 1. Figure 2 express Figure 1 Section II of the plasma generating device 1. Figure 1 and Figure 2 The XYZ orthogonal coordinate system is appropriately represented in the diagram. Hereinafter, one side in the X direction is sometimes referred to as the +X side, and the other side in the X direction as the -X side. The same applies to the Y and Z axes.

[0041] The plasma generating device 1 includes an electrode group 2 and a dielectric 3. The electrode group 2 includes a plurality of electrodes 21. The electrodes 21 are made of conductive materials such as metals. Figure 1 and Figure 2 In the example, three electrodes 21 are shown, which are represented as multiple electrodes 21.

[0042] Figure 1 In this example, each of the multiple electrodes 21 has a long, cylindrical shape that extends further in the X direction. That is to say, Figure 1 In this example, the length of electrode 21 in the X direction is longer than the length (width) of electrode 21 in the Y direction. Additionally, the axis of electrode 21 is parallel to the X direction. Figure 2In this example, the cross-sectional shape (YZ section) of electrode 21 is circular. However, the shape of electrode 21 is not necessarily limited to this and can be changed appropriately.

[0043] Multiple electrodes 21 are arranged at intervals within a specific arrangement plane. Here, as an example, the arrangement plane is a plane parallel to the XY plane. Figure 1 In this example, multiple electrodes 21 are arranged side-by-side with open intervals in the Y direction. That is, multiple electrodes 21 are arranged parallel to each other. The spacing between the electrodes 21, as described later, is set to a value that determines the degree to which the electric field generated around the electrodes 21 can ionize the gas plasma. Hereinafter, the electrodes 21 on both sides of the three electrodes 21 are sometimes referred to as electrodes 21a, and the central electrode 21 is referred to as electrode 21b. Electrodes 21a and 21b are arranged alternately in the Y direction.

[0044] Figure 1 In this example, electrode 21a extends further to the +X side than the +X side end of electrode 21b, and electrode 21b extends further to the -X side than the -X side end of electrode 21a. Therefore, electrodes 21a and 21b are arranged in a comb-like pattern.

[0045] Dielectric 3 seals the plurality of electrodes 21. Dielectric 3 is made of insulating materials such as insulating resin, glass, and ceramic. Figure 1 In the example, dielectric 3 includes dielectric component 31 and dielectric component 32. Dielectric components 31 and 32 may be made of different materials or the same material.

[0046] Figure 2 In this example, the dielectric component 31 has a plate-like shape and is arranged with its thickness direction along the Z direction. For example, when viewed along the Z direction, the dielectric component 31 has a rectangular shape, with one side parallel to the X direction. Multiple electrodes 21 are disposed on the main surface 31a of the dielectric component 31. In this case, the main surface 31a can also be referred to as the arrangement surface for arranging the multiple electrodes 21. The main surface 31a on the +Z side of the dielectric component 31 is parallel to the XY plane.

[0047] Dielectric component 32 is disposed on the main surface 31a of dielectric component 31 and covers multiple electrodes 21. Both dielectric components 31 and 32 are in close contact with the electrodes 21, and dielectric material 3 seals the multiple electrodes 21. In this way, multiple electrodes 21 are embedded in dielectric material 3. The main surface of dielectric component 32 on the +Z side, that is, the main surface 3a of dielectric material 3, is parallel to the arrangement surface of electrode group 2. In other words, the distance between the main surface 3a of dielectric material 3 and each electrode 21 is equal.

[0048] Such a dielectric component 32 can be formed, for example, by applying a liquid curable resin to the main surface 31a and the plurality of electrodes 21 of the dielectric component 31 and then curing it with heat or light. Alternatively, the dielectric component 32 can be formed by attaching adhesive tape (e.g., Teflon tape) to the main surface 31a and the electrodes 21 of the dielectric component 31.

[0049] Multiple electrodes 21 are electrically connected to a high-frequency power supply 4 located outside the dielectric 3. Figure 3 In the example, each electrode 21 is connected to the high-frequency power supply 4 via lead wire 41. Figure 3 In the example, lead-out wiring 41 represents lead-out wirings 41a and 41b corresponding to electrodes 21a and 21b, respectively. Lead-out wiring 41a is connected to electrode 21a and extends from the +X side end of dielectric 3. Lead-out wiring 41b is connected to electrode 21b and extends from the -X side end of dielectric 3. That is, lead-out wirings 41a and 41b extend from opposite ends of dielectric 3. Lead-out wiring 41a is connected to one output terminal 4a of the high-frequency power supply 4, and lead-out wiring 41b is connected to the other output terminal 4b of the high-frequency power supply 4.

[0050] Electrode 21 and a portion of lead wire 41 can be integrally formed. For example, the front end portion of a metal rod-shaped member can be sealed with dielectric 3, and the base end portion can extend outward from the end of dielectric 3. In this case, the front end portion of the rod-shaped member becomes electrode 21, and the base end portion of the rod-shaped member becomes part of lead wire 41. Lead wire 41, in addition to the base end portion of the rod-shaped member, is also composed of wires and connectors. Lead wire 41 is also protected by an insulating film or the like.

[0051] A high-frequency power supply 4 applies a high-frequency voltage between electrodes 21a and 21b. This generates an electric field around electrodes 21a and 21b. A portion of this electric field, as described later, acts on the outermost surface 31a of the dielectric 3, causing gas plasma ionization. In other words, the effective value and frequency of the high-frequency voltage output by the high-frequency power supply 4, for example, the voltage can be 9kV to 15kV and the frequency can be 12kHz to 30kHz, are set to the degree to which the electric field generated around electrodes 21 can ionize the gas plasma. The high-frequency power supply 4 may also include, for example, an inverter circuit (not shown). This allows adjustment of the effective value and frequency of the high-frequency voltage applied between electrodes 21a and 21b.

[0052] like Figure 3As illustrated, the thickness (thickness in the Z direction) of dielectric component 32 can be thinner than the thickness of dielectric component 31. In other words, the gap (gap in the Z direction) D1 between the main surface 3a on the +Z side of dielectric 3 and the electrode group 2 can be narrower than the gap D2 between the main surface 3b on the -Z side of dielectric 3 and the electrode group 2.

[0053] <Operation of the Plasma Generating Device>

[0054] Plasma generating device 1 is disposed in a gas. In the space R1 (refer to) facing the main surface 3a of dielectric 3. Figure 3 A plasma gas that is more easily ionized than the gas on the main surface 3b facing the opposite side can be introduced. For example, a rare gas such as argon, nitrogen, or oxygen can be used as the easily ionized gas.

[0055] If a high-frequency voltage is applied between electrodes 21a and 21b by the high-frequency power supply 4, an electric field will be generated between electrodes 21a and 21b. Figure 3 This is a schematic diagram illustrating an example of the electric field lines generated between electrodes 21a and 21b. (See diagram for example.) Figure 4 As illustrated, although the electric field lines through the space R2 between electrodes 21a and 21b are parallel to the Y direction, at locations closer to the +Z and -Z sides of the space R2, the electric field lines have a curved shape that bulges toward the opposite side of the space R2.

[0056] like Figure 4 As illustrated, a portion of the electric field lines pass through a space R1 located further to the +Z side than the main surface 3a of the dielectric 3. That is, a portion of the electric field generated around the electrodes 21a and 21b acts on space R1. In other words, the distance D1 between the main surface 3a of the dielectric 3 and the electrode group 2 is set to the extent that the electric field acts on space R1. The gas within space R1 is plasmaized by applying the electric field.

[0057] There are no particular restrictions on the objects that the plasma generated by the plasma generating device 1 can act on; for example, the plasma can also act on plants. As a result, plant growth can be promoted.

[0058] In the plasma generating device 1, the multiple electrodes 21 are sealed by the dielectric 3 and are therefore not exposed to the plasma gas. In other words, the multiple electrodes 21 are not exposed in the space R1. Therefore, degradation of the electrodes 21 caused by plasma can be avoided. Thus, the reliability of the plasma generating device 1 can be improved.

[0059] and, Figure 4 In this example, since the opposing directions (here, the Y direction) of adjacent electrodes 21 are parallel to the main surface 3a of dielectric 3, the electric field lines pass through space R1 with a shorter path. As a result, an electric field with a higher intensity can be generated within space R1.

[0060] Figure 4 This diagram illustrates an example of the configuration of a comparative plasma generating apparatus 1A. The plasma generating apparatus 1A includes an electrode 210a, a plurality of electrodes 210b, and a dielectric 300. The electrode 210a has a flat plate shape and is arranged with its thickness direction along the Z direction. The main surface of the electrode 210a on the +Z side is parallel to the XY plane. The plurality of electrodes 210b are provided on the +Z side of the electrode 210a. The plurality of electrodes 210b are arranged with a gap relative to the electrode 210a. Figure 4 In this example, multiple electrodes 210b are arranged with gaps between them in the XY plane. Specifically, three electrodes 210b are arranged with gaps between them in the Y direction.

[0061] Dielectric 300 covers and seals electrodes 210a and 210b. In other words, electrodes 210a and 210b are embedded in dielectric 300. The spacing between the main surface 300a on the +Z side of dielectric 300 and electrode 210b is relatively narrow. The main surface 300a of dielectric 300 is parallel to the XY plane.

[0062] Electrode 210a is connected to one output terminal of the high-frequency power supply, and multiple electrodes 210b are connected to the other output terminal of the high-frequency power supply. When the high-frequency power supply applies a high-frequency voltage between electrodes 210a and 210b, an electric field is generated around electrodes 210a and 210b. Figure 3 The electric field lines are schematically represented by dashed lines. For example... Figure 4 As illustrated, electric field lines extending from electrode 210b toward the +Z side pass through the space R100 facing the main surface 300a of dielectric 3. Specifically, the electric field lines extend from electrode 210b toward the +Z side through the space R100, and bend into a U-shape in their direction of travel to extend toward the -Z side, reaching electrode 210a between adjacent electrodes 210b.

[0063] Even in the plasma generating device 1A, the electric field acts on the space R100 on the +Z side of the main surface 300a of the dielectric 300, thus ionizing the gas within the space R100. However, in the plasma generating device 1A, the opposing direction (Z direction) of the electrodes 210a and 210b is orthogonal to the main surface 300a of the dielectric 300. Therefore, as... Figure 4 As shown, the electric field lines passing through space R100 temporarily extend from electrode 210b in the direction opposite to electrode 210a before turning their path to reach electrode 210a. Accordingly, the length of the electric field lines increases significantly relative to the distance between electrodes 210a and 210b, resulting in a lower electric field strength in space R100. To increase the electric field strength in space R100 of the plasma generation device 1A, a high-frequency power supply capable of outputting a higher voltage is required.

[0064] In contrast, in this embodiment, such as Figure 5 As illustrated, the opposing directions (Y direction) of electrodes 21a and 21b are parallel to the main surface 3a of dielectric 3. Accordingly, the electric field lines passing through the space R1 on the side of the main surface 3a of dielectric 3 are... Figure 5 Unlike before, it did not make a U-shaped turn. Therefore, Figure 1 The length of the electric field lines is slightly longer than the distance between electrodes 21a and 21b. Therefore, a high-intensity electric field can be generated within space R1, and gas plasma can be easily ionized within space R1. In other words, plasma can still be generated in space R1 even using a low-output, low-cost high-frequency power supply 4. For example, a low-cost neon lamp transformer can be used as the high-frequency power supply 4. Furthermore, since plasma can be generated with low output, the power consumption of the plasma generating device 1 can also be reduced.

[0065] Furthermore, in the example described, the cross-sectional shapes of electrodes 21a and 21b are circular. This allows the electric field lines to be easily bent, resulting in a more extensive electric field formation within space R1. Consequently, the irradiation range of the plasma (the area from which plasma is formed) can be expanded.

[0066] Furthermore, although three electrodes 21 are provided in the example described, the number of electrodes 21 is not limited to this. Figure 1 This is a top view schematically illustrating another example of the configuration of the plasma generating device 1. Figure 1 In this example, five electrodes 21 are shown as multiple electrodes 21. These five electrodes 21 are arranged at intervals along the Y direction. The five electrodes 21 and... Figure 1 Similarly arranged in a comb-like pattern, electrodes 21a and 21b are alternately arranged in the Y direction. Electrode 21a is connected to the output terminal 4a of the high-frequency power supply 4 via lead wire 41a, and electrode 21b is connected to the output terminal 4b of the high-frequency power supply 4 via lead wire 41b.

[0067] Therefore, in order to Figure 5 When the electrodes 21 are arranged at the same interval, plasma can be generated within a wider space R1. On the other hand, compared to... Figure 6 With a narrower spacing of the electrodes 21, an electric field can be generated in space R1 with a higher intensity, which can increase the amount of plasma generated.

[0068] Furthermore, in the example described, the distance D1 between the main surface 3a of the dielectric 3 and the electrode group 2 is narrower than the distance D2 between the main surface 3b of the dielectric 3 and the electrode group 2. This makes it easier to generate an electric field in the space R1 on the main surface 3a side, and to easily ionize the gas in space R1. On the other hand, since the electric field is less likely to act on the space facing the main surface 3b, plasma is less likely to be generated in that space. Therefore, the possibility of plasma acting on undesirable components can be reduced.

[0069] <Dielectric constant>

[0070] The dielectric constant of the dielectric component 31 forming the main surface 3a can be smaller than that of the dielectric component 31 forming the main surface 3b. This makes it easier to generate an electric field in the space R1 on the main surface 3a side and to easily ionize the gas in space R1. On the other hand, since an electric field is less likely to act on the space on the main surface 3b side, plasma is less likely to be generated in that space. Therefore, the possibility of plasma acting on undesirable components can be reduced.

[0071] in addition, Figure 6 and Figure 7 In the example, although there is an odd number of electrodes 21, there can also be an even number of electrodes.

[0072] In the example described above, the arrangement surface for arranging the plurality of electrodes 21 is parallel to the main surface 3a of the dielectric 3. However, this is not a limitation; the arrangement surface of the electrodes 21 may also be inclined relative to the main surface 3a of the dielectric 3. Furthermore, the main surface 3a of the dielectric 3 is not necessarily limited to a plane; it may be appropriately formed with irregularities or depressions, or it may be curved.

[0073] Furthermore, in the example described, electrode 21 extends in a straight line when viewed from above (XY plane view), but is not limited to this. The arrangement of electrodes 21 on the arrangement surface can be appropriately changed. Figure 7 This is a top view schematically illustrating an example of the configuration of electrode group 2. Figure 8 In the example, two electrodes 21 are shown. Each electrode 21 extends in a spiral shape. The electrodes 21 are spaced apart and extend parallel to each other. Plasma can be generated in this way. In addition, the shape of the cross-section (YZ cross-section) of the electrode 21 is not limited to a circular shape. For example, it can also be a rectangular cross-section with a longer strip shape in the X direction.

[0074] Alternatively, as another specific example, the multiple electrodes 21 may have annular or arcuate shapes and be arranged concentrically. Alternatively, the multiple electrodes 21 may be arranged radially. Alternatively, the multiple electrodes 21 may have point-like (e.g., circular or quadrilateral) shapes and be arranged two-dimensionally within the arrangement plane.

[0075] <Second Implementation Method>

[0076] In the second embodiment, a state in which the plasma generating apparatus 1 is used for substrate processing is described. Figure 7 This is a top view schematically illustrating an example of the configuration of a substrate processing system 100. The substrate processing system 100 includes a loading port LP, a transfer robot IR, a central robot CR, a control unit 90, and at least one processing unit UT. Figure 7(There are 4 processing units in total). Multiple processing units UT are used to process the substrate W (wafer), at least one of which corresponds to the substrate processing apparatus 110 described later. The substrate processing apparatus 110 is a monolithic device capable of substrate processing, specifically, a monolithic device capable of removing organic matter adhering to the substrate W. The organic matter is typically a used photoresist film. The photoresist film is used, for example, as an implantation mask for an ion implantation step. The substrate processing apparatus 110 may have a chamber 111. In this case, substrate processing can be performed in a desired gas by controlling the gas within the chamber 111.

[0077] The control unit 90 can control the operation of each component in the substrate processing system 100. Each carrier C is a holder for receiving substrates W. The loading port LP is a holder mechanism for holding multiple carriers C. The transfer robot IR can transfer substrates W between the loading port LP and the substrate placement unit PS. The central robot CR can transfer substrates W from the substrate placement unit PS and at least one processing unit UT to another. Based on the above configuration, the transfer robot IR, the substrate placement unit PS, and the central robot CR function as a transfer mechanism for transferring substrates W between each processing unit UT and the loading port LP.

[0078] Unprocessed substrate W is removed from carrier C by transfer robot IR and transferred to central robot CR via substrate placement unit PS. Central robot CR moves the unprocessed substrate W into processing unit UT. Processing unit UT processes substrate W. Processed substrate W is removed from processing unit UT by central robot CR, and after passing through another processing unit UT as needed, is transferred to transfer robot IR via substrate placement unit PS. Transfer robot IR moves the processed substrate W into carrier C. The substrate W is processed in this way.

[0079] Figure 9 This schematically represents the control unit 90 ( Figure 9 The block diagram illustrates an example of the structure of the control unit 90. The control unit 90 can be constructed from a conventional computer with circuitry. Specifically, the control unit 90 includes an arithmetic processing device 91 such as a CPU (Central Processing Unit), a non-temporary storage unit 92 such as ROM (Read Only Memory), a temporary storage unit 93 such as RAM (Random Access Memory), a storage device 94, an input unit 96, a display unit 97, and a communication unit 98, as well as a bus 95 connecting them to each other.

[0080] Storage unit 92 stores the basic program. Storage unit 93 serves as the working area for the computing processing unit 91 during specific processing. Storage device 94 is composed of non-volatile storage devices such as flash memory or hard disk drives. Input unit 96 is composed of various switches or touch panels, etc., and receives input setting instructions such as processing procedures from the operator. Display unit 97 is composed of, for example, a liquid crystal display device and lights, and displays various information under the control of computing processing unit 91. Communication unit 98 has data communication functions via LAN (Local Area Network), etc. Storage device 94 is pre-set with the components constituting substrate processing system 100 (… Figure 9 The control unit 90 has multiple control modes related to each device. By executing the processing program 94P on the arithmetic processing unit 91, one of the multiple modes is selected, and each device is controlled according to that mode. Alternatively, the processing program 94P can be stored on a recording medium. If the recording medium is used, the processing program 94P can be installed on the control unit 90. Some or all of the functions performed by the control unit 90 may not be implemented in software, but may be implemented in hardware such as dedicated logic circuits.

[0081] Figure 9 This diagram schematically illustrates an example of the configuration of a processing unit UT, namely a substrate processing apparatus 110. The substrate processing apparatus 110 includes a chamber 111, an adsorption and holding mechanism 50, a rotation mechanism 60, a processing section 80, and a plasma generating device 1.

[0082] An adsorption and holding mechanism 50 is disposed within chamber 111. The adsorption and holding mechanism 50 adsorbs the back side of substrate W, holding substrate W horizontally. Here, "back side" refers to, for example, the side of substrate W on which no device is formed. Substrate W is held by adsorption and holding mechanism 50 with its back side facing down. Figure 9 In this example, the adsorption holding mechanism 50 includes an adsorption member 51, and a substrate W is placed on the adsorption surface 51a of the adsorption member 51. The adsorption surface 51a of the adsorption member 51 has, for example, a circular shape when viewed from above. The diameter of the adsorption surface 51a of the adsorption member 51 is smaller than the diameter of the substrate W, for example, less than one-quarter of the diameter of the substrate W.

[0083] An adsorption port (not shown) is formed on the adsorption surface 51a of the adsorption member 51. Multiple adsorption ports may be dispersedly formed on the adsorption surface 51a. An internal flow path (not shown) connected to the adsorption ports is formed inside the adsorption member 51. This internal flow path is connected to a suction mechanism 56 via a suction pipe 55. The suction mechanism 56, for example, includes a pump that draws gas from inside the suction pipe 55. Thus, gas is drawn from the adsorption ports of the adsorption surface 51a, thereby adsorbing and holding the substrate W on the adsorption member 51. The suction mechanism 56 is controlled by a control unit 90. Alternatively, the substrate W may not necessarily be held by adsorption; it may be held by any other method.

[0084] A rotation mechanism 60 is disposed within chamber 111. The rotation mechanism 60 causes the adsorption and holding mechanism 50 (more specifically, the adsorption component 51) to rotate about the rotation axis Q1. As a result, the substrate W adsorbed and held in the adsorption and holding mechanism 50 also rotates about the rotation axis Q1. The rotation axis Q1 is an imaginary axis extending vertically through the center of the substrate W.

[0085] The rotating mechanism 60 includes a motor 61. The motor 61 is connected to the adsorption component 51 via a shaft 62. The shaft 62 extends along the rotation axis Q1 and its upper end is connected to the adsorption component 51. The shaft 62 is, for example, a hollow shaft with a cylindrical shape, and the suction tube 55 is connected to the internal flow path of the adsorption component 51 through the hollow portion of the shaft 62.

[0086] Motor 61 is connected to shaft 62, causing shaft 62 to rotate around axis Q1. Figure 9 In this example, the motor 61 and the shaft 62 are coaxially arranged. The shaft 62 extends upward from the motor 61. By rotating the shaft 62 with the motor 61, the adsorption component 51 can rotate about the rotation axis Q1. The motor 61 is controlled by the control unit 90.

[0087] Motor 61 is housed in motor housing component 70. Motor housing component 70 protects motor 61 from external processing gases. As a specific example, it protects motor 61 from liquid medicine sprayed from nozzle 81 (described later) and cleaning fluid sprayed from cleaning nozzle (not shown).

[0088] The processing unit 80 processes the substrate W that is adsorbed and held by the adsorption and holding mechanism 50. Figure 9 In this example, the processing unit 80 includes a nozzle 81, a pipe 82, and a valve 83. The nozzle 81 is located in the chamber 111 and sprays the processing liquid onto the substrate W held by the adsorption and holding mechanism 50. Figure 9 In this example, the nozzle 81 is positioned above the substrate W and faces the center of the substrate W in the vertical direction.

[0089] Nozzle 81 is connected to processing liquid supply source 84 via piping 82. Processing liquid supply source 84 supplies processing liquid to nozzle 81 via piping 82. Nozzle 81 sprays processing liquid toward the center of the surface of substrate W. Valve 83 is installed midway through piping 82. Valve 83 switches the flow path inside piping 82. Valve 83 is controlled by control unit 90. Valve 83 may also be a valve that can adjust the flow rate of processing liquid flowing inside piping 82.

[0090] With the rotating mechanism 60 causing the adsorption holding mechanism 50 and the substrate W to rotate, the valve 83 is opened and the nozzle 81 supplies the processing liquid to the rotating substrate W. As a result, the processing liquid adheres to the central part of the upper surface of the substrate W, and is diffused on the upper surface of the substrate W by the centrifugal force accompanying the rotation of the substrate W, and spreads outward from the periphery of the substrate W.

[0091] Figure 9 In this example, nozzle 81 can move between a first processing position and a second standby position via nozzle moving mechanism 85. The first processing position is the position where nozzle 81 sprays the processing liquid. ​ In the example, the first standby position is above the substrate W and opposite to the center of the substrate W. The first standby position is the position where the nozzle 81 does not spray the processing liquid, and is, for example, not opposite to the substrate W in the vertical direction. That is, for example, the first standby position is a position further outward than the periphery of the substrate W when viewed from above.

[0092] The nozzle moving mechanism 85 may include, for example, a robotic arm, a support rod, and a motor (not shown). The robotic arm extends horizontally and its front end is connected to the nozzle 81. The base end of the robotic arm is connected to the support rod. The support rod extends vertically and its base end is connected to the motor. The motor is controlled by the control unit 90. By rotating the support rod with the motor, the robotic arm rotates around the support rod, thereby moving the nozzle 81, connected to the front end of the robotic arm, along a circumferential direction centered on the support rod between a first processing position and a first standby position.

[0093] The processing unit 80 can supply various processing liquids to the substrate W. For example, the processing unit 80 may have multiple nozzles corresponding to the types of processing liquids. As processing liquids, for example, chemical solutions and cleaning solutions can be used. As chemical solutions, for example, acidic chemical solutions can be used. As a more specific example, at least one of sulfuric acid, sulfate, persulfate, and persulfate can be used as the chemical solution. Alternatively, a chemical solution containing hydrogen peroxide water can also be used. As cleaning solutions, at least one of pure water and isopropanol (IPA) can be used.

[0094] The following describes an arrangement where a cleaning nozzle is provided in addition to nozzle 81. Specifically, the processing unit 80 also includes, for example, a cleaning nozzle, cleaning piping, and a cleaning valve, none of which are shown in the figure. The cleaning nozzle sprays cleaning fluid into the center of the substrate W held by the adsorption and holding mechanism 50. The cleaning fluid is a processing fluid used to rinse the chemical solution on the substrate W.

[0095] The cleaning nozzle is connected to the cleaning fluid supply source via a cleaning pipe. The cleaning valve is modified into a cleaning pipe, switching the internal flow path of the cleaning pipe. The cleaning valve is controlled by the control unit 90. The cleaning valve can also be a valve that can adjust the flow rate of the cleaning fluid flowing inside the cleaning pipe. The cleaning nozzle can be connected to the nozzle 81. In this case, the cleaning nozzle can move integrally with the nozzle 81.

[0096] The processing unit 80 first supplies a chemical solution to the upper surface of the rotating substrate W. As a result, the chemical solution acts on the entire upper surface of the substrate W, performing a processing procedure on the substrate W. For example, a process is performed to remove the resist film from the substrate W using the chemical solution.

[0097] In this process, an immersion treatment can be performed. During the immersion treatment, the processing unit 80 stops supplying the chemical solution, and the rotation mechanism 60 reduces the rotation speed of the substrate W. The rotation mechanism 60 rotates the substrate W at a speed sufficient to maintain a liquid film of the chemical solution on the upper surface of the substrate W. That is, the substrate W is rotated at a speed sufficient to prevent the chemical solution from scattering from the periphery of the substrate W. Since no chemical solution is supplied during the immersion treatment, the consumption of the chemical solution can be reduced. After the resist film is sufficiently removed, the rotation mechanism 60 increases the rotation speed of the substrate W again, causing the chemical solution on the upper surface of the substrate W to scatter outward from the periphery of the substrate W.

[0098] Subsequently, the processing unit 80 supplies cleaning fluid to the rotating substrate W, thereby rinsing away the residual drug solution on the upper surface of the substrate W. In other words, the drug solution on the upper surface of the substrate W can be replaced with cleaning fluid. The cleaning fluid is dispersed from the periphery of the substrate W outwards due to the centrifugal force accompanying the rotation of the substrate W.

[0099] ​ In this example, the substrate processing apparatus 110 further includes a protective cover 76. The protective cover 76, when viewed from above, has a cylindrical shape surrounding the substrate W. The protective cover 76 catches processing liquid that spills from the periphery of the substrate W, allowing the processing liquid to flow to a recovery section (not shown). The protective cover 76 is movable vertically via a protective cover moving mechanism 77. The protective cover moving mechanism 77 moves the protective cover 76 between an upper position where its upper end is above the substrate W and a lower position where its upper end is below the substrate W. The protective cover moving mechanism 77 may include, for example, a cylinder mechanism or a ball screw mechanism.

[0100] ​ In this example, the plasma generating device 1 is positioned facing the upper surface of the substrate W held by the adsorption holding mechanism 50. That is, the plasma generating device 1 is positioned above the upper surface of the substrate W. Therefore, the plasma generating device 1 is positioned with a gap between it and the upper surface of the substrate W. When viewed from above, the plasma generating device 1 is offset from the nozzle 81. In other words, the plasma generating device 1 is positioned to avoid the area between the nozzle 81 and the substrate W. This prevents the processing liquid ejected from the nozzle 81 from colliding with the plasma generating device 1.

[0101] The plasma generating device 1 can also be configured to be movable via the moving mechanism 5. The moving mechanism 5 moves the plasma generating device 1 between a second processing position and a second standby position. The second processing position is a position facing the upper surface of the substrate W held by the adsorption and holding mechanism 50, and the second standby position is a position further outward than the periphery of the substrate W when viewed from above. The moving mechanism 5 may, for example, have the same configuration as the nozzle moving mechanism 85.

[0102] The plasma generating device 1 is connected to a high-frequency power supply 4 disposed outside the chamber 111. The high-frequency power supply 4 is controlled by the control unit 90. The plasma generating device 1 is arranged with the main surface 3a of the dielectric 3 facing the substrate W. Therefore, when the high-frequency power supply 4 applies a high-frequency voltage to the electrode 21, the plasma generating device 1 ionizes the gas (e.g., oxygen) between the dielectric 3 and the substrate W.

[0103] The plasma generating apparatus 1 generates plasma at a second processing position while a liquid drug is present on the upper surface of a rotating substrate W. Accordingly, the plasma acts on the liquid drug film on the upper surface of the substrate W. The plasma generating apparatus 1 is positioned on a portion of the circumference of the substrate W when viewed from above, but by rotating the substrate W, the plasma spreads throughout the entire circumference and acts on the liquid drug film on the substrate W. Through the action of the plasma on the liquid drug film on the substrate W, free radicals with strong oxidizing power are generated in the liquid film. Therefore, substrate treatment using the oxidizing power of the liquid drug can be performed effectively. Specifically, the resist film can be effectively removed from the substrate W.

[0104] Preferably, the solution contains sulfuric acid. In this case, peroxysulfuric acid (carboxylic acid) can be generated by irradiating sulfuric acid with plasma. Accordingly, the generation of carboxylic acid does not require hydrogen peroxide water. Without using hydrogen peroxide water, the burden of wastewater treatment is reduced, and sulfuric acid is easily recovered. Here, when using a solution containing sulfuric acid, the concentration of sulfuric acid is preferably in the range of 94% to 98%, more preferably around 96%.

[0105] To adjust the gas inside chamber 111, the substrate processing apparatus 110 may be provided with a gas supply unit 86. The gas supply unit 86 supplies gas (e.g., inert gas such as nitrogen or rare gas, or oxygen) into chamber 111. As a result, the atmosphere inside chamber 111 can be made close to the desired atmosphere.

[0106] Additionally, the gas supply unit 86 can also supply plasma-generating gas (e.g., inert gas or oxygen) to the vicinity of the plasma generating apparatus 1. As a specific example, the gas supply unit 86 includes a nozzle (outlet pipe) 87 for ejecting gas into the space between the main surface 3a of the plasma generating apparatus 1 and the substrate W. The nozzle 87 is connected to a gas supply source 891 via a supply pipe 88. The gas supply source 891 supplies at least one of an inert gas such as nitrogen or a rare gas and oxygen as the plasma-generating gas to the supply pipe 88. A valve 89 is provided in the supply pipe 88 to control its opening and closing. The valve 89 is controlled by a control unit 90.

[0107] Nozzle 87 may also be located near plasma generating apparatus 1. The outlet of nozzle 87 may also face the opening in the space between plasma generating apparatus 1 and substrate W. Alternatively, nozzle 87 may be located opposite the center of substrate W, ejecting gas into the center of substrate W. The gas from nozzle 87 diffuses radially outward from the center of substrate W, thus also flowing into the space between plasma generating apparatus 1 and substrate W. Nozzle 87 may also be connected to dielectric 3.

[0108] As described above, the substrate processing apparatus 110 is equipped with a plasma generating device 1. Therefore, the substrate W can be processed using plasma with low power consumption. Furthermore, according to the plasma generating device 1, the electrode 21 is sealed with a dielectric 3, thus protecting the electrode 21 from the atmosphere inside the chamber 111. For example, if an acidic solution comes into contact with the electrode 21, it may corrode the electrode 21, but the dielectric 3 can prevent such corrosion. Conversely, it can prevent components dissolved from the electrode 21 or components splashed by the plasma from adhering to the substrate W and contaminating the substrate W.

[0109] In the example described, plasma is applied to the pharmaceutical solution to generate free radicals with high oxidizing power. Therefore, the removal of the resist film from the substrate W can be performed more effectively.

[0110] Furthermore, in the aforementioned example, in the substrate processing apparatus 110, although the plasma acts on the processing liquid, it can also act directly on the substrate W. That is, the high-frequency power supply 4 can apply a high-frequency voltage between electrodes 21a and 21b when the substrate W is not coated with processing liquid. Therefore, the plasma can act directly on the substrate W, enabling surface modification (e.g., hydrophilization) and other treatments on the substrate W.

[0111] As described above, the plasma generating apparatus 1 and the substrate processing apparatus 110 have been described in detail. However, all aspects described herein are merely illustrative, and the plasma generating apparatus 1 and the substrate processing apparatus 110 are not limited thereto. It should be understood that numerous variations not illustrated can be conceived without departing from the scope of the invention. The configurations described in the various embodiments and variations can be appropriately combined or omitted as long as they do not contradict each other.

[0112] [Explanation of Symbols]

[0113] 1: Plasma generating device

[0114] 2: Electrode Group

[0115] 21: Electrode

[0116] 21a: First electrode (electrode)

[0117] 21b: Second electrode (electrode)

[0118] 3: Dielectric

[0119] 31: First dielectric component (dielectric component)

[0120] 32: Second dielectric component (dielectric component)

[0121] 110: Substrate processing apparatus

[0122] 50: Maintaining the organization

[0123] 81: Nozzle.

Claims

1. A plasma generating apparatus, disposed in a gas to generate plasma, and comprising: A dielectric material having a first main surface and a second main surface opposite to the first main surface; An electrode group, sealed by the dielectric, comprises at least one first electrode and at least one second electrode alternately arranged in an arrangement plane parallel to the first main surface, such that an electric field generated by applying a high-frequency voltage between the first electrode and the second electrode acts on an outer surface beyond the first main surface; and A high-frequency power supply, electrically connected to the first electrode and the second electrode, applies the high-frequency voltage; and The high-frequency power supply sets the effective value and frequency of the high-frequency voltage applied between the first electrode and the second electrode to be between 9 kV and 15 kV and between 12 kHz and 30 kHz.

2. The plasma generating apparatus according to claim 1, wherein... The spacing between the electrode group and the first main surface is narrower than the spacing between the electrode group and the second main surface.

3. The plasma generating apparatus according to claim 1 or claim 2, wherein... The dielectric comprises: A first dielectric member having the first main surface; and A second dielectric member having the second main surface; and The dielectric constant of the first dielectric component is lower than that of the second dielectric component.

4. The plasma generating apparatus according to claim 1 or claim 2, wherein... The first electrode and the second electrode are cylindrical in shape.

5. A substrate processing apparatus for processing a substrate, comprising: A holding mechanism for holding the substrate; and The plasma generating apparatus according to claim 1 or claim 2.

6. The substrate processing apparatus according to claim 5, further comprising: The first nozzle supplies a treatment solution containing at least one of sulfuric acid, sulfate, persulfate, and persulfate to the main surface of the substrate held in the holding mechanism, and... The plasma generated by the plasma generating device is applied to the treatment liquid.

7. The substrate processing apparatus according to claim 5, further comprising: The second nozzle supplies plasma gas between the plasma generating device and the substrate held by the holding mechanism.

8. The substrate processing apparatus according to claim 6, further comprising: A rotating mechanism is used to rotate the holding mechanism about a rotation axis; and The control unit controls the rotation mechanism and the flow rate of the processing liquid supplied from the first nozzle to maintain a liquid film of the processing liquid on the main surface of the substrate.

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