Electric field shielding effectiveness calculation method, system and electronic equipment

Abstract

The present application discloses an electric field shielding effectiveness measurement method, system and electronic device, which can comprehensively and accurately measure the electric field shielding effectiveness. The method includes: placing the electronic device to be measured in an interference electric field; adjusting the field parameters of the interference electric field and collecting the electric field information of the target analysis area under different field parameters when there is a shielding shell and when there is no shielding shell; calculating and determining the mean field strength of the target analysis area according to the electric field information; calculating and determining the electric field shielding effectiveness according to the ratio of the mean field strength when there is a shielding shell and when there is no shielding shell. The system includes an electric field interference unit, an electric field information collection unit, a field strength mean calculation unit and an electric field shielding effectiveness calculation unit. The electronic device includes a memory, a processor and a computer program stored in the memory and executable on the processor, and the processor implements the electric field shielding effectiveness measurement method when executing the computer program.

Description

Technical Field

[0001] The present application relates to the technical field of electrical performance testing, and specifically to an electric field shielding effectiveness measurement method, system and electronic equipment. Background Art

[0002] With the continuous development of science and technology, more and more electronic devices such as sensor equipment, communication equipment and computer equipment are applied to various fields, bringing great convenience to industrial production and people's daily life. Electronic equipment generally includes a variety of electronic devices, and their size, power, stability and functional characteristics will affect the operation of electronic equipment. Many important electronic devices have relatively complex circuits inside, and certain electromagnetic shielding measures need to be taken to prevent external environmental factors from affecting the normal operation of internal circuits. Therefore, the electric field shielding effectiveness of electronic devices has also become an important indicator for measuring the quality of electronic equipment. Some related technologies have relatively simple methods for measuring electric field shielding effectiveness, so there is an urgent need to provide a more comprehensive and accurate electric field shielding effectiveness measurement scheme. Summary of the invention

[0003] In view of this, the embodiments of the present application provide an electric field shielding effectiveness calculation method, system and electronic device, which can comprehensively and accurately calculate the electric field shielding effectiveness.

[0004] In a first aspect, an embodiment of the present application provides a method for calculating electric field shielding effectiveness, comprising:

[0005] The electronic device under test is placed in an interfering electric field, wherein the electronic device under test has a first state where a shielding shell is removed and a second state where a shielding shell is installed;

[0006] In the first state and the second state respectively, adjusting the field parameters of the interfering electric field and collecting the electric field information of the target analysis area in the electronic device to be tested under different field parameters;

[0007] Calculate and determine the mean value of the field intensity of the target analysis area according to the electric field information;

[0008] The electric field shielding effectiveness is determined by calculation based on the ratio of the field intensity averages corresponding to the first state and the second state.

[0009] Optionally, the field parameters include the interference frequency of the interference electric field and the interference field strength of the interference field source.

[0010] The electric field information includes electric field intensities uniformly distributed at a plurality of points in the target analysis region.

[0011] Optionally, calculating and determining the mean field intensity of the target analysis area according to the electric field information includes:

[0012] Performing symmetry judgment on the electric field of the target analysis area according to the electric field information;

[0013] In response to the symmetrical distribution of the electric field in the target analysis area, a symmetry axis is selected as a sampling curve, and the field intensity mean is calculated by using a curve sampling method;

[0014] In response to the asymmetric distribution of the electric field in the target analysis area, the surface where the target analysis area is located is used as a sampling curved surface, and the field intensity mean value is calculated by adopting a curved surface sampling method.

[0015] Optionally, the calculating the field strength mean value by adopting a curve sampling method includes:

[0016] Determining the electric field strength at a plurality of sampling points on the sampling curve;

[0017] According to the electric field strength of the plurality of sampling points, a line integral mean along the sampling curve is calculated and determined as the field strength mean value:

[0018] E avg_l =∫ l E dl / l

[0019] Among them, E avg_l represents the line integral mean, E represents the electric field intensity, and l represents the sampling curve.

[0020] Optionally, the calculating the field intensity mean value by using a curved surface sampling method includes:

[0021] Determine the electric field strength at a plurality of sampling points on the sampling surface;

[0022] According to the electric field strength of the plurality of sampling points, the surface integral mean along the sampling curved surface is calculated and determined as the field strength mean:

[0023]

[0024] Among them, E avg_s represents the surface integral mean, E represents the electric field intensity, and S represents the sampling surface.

[0025] Optionally, before calculating and determining the electric field shielding effectiveness according to the ratio of the field intensity mean values ​​corresponding to the first state and the second state, the method further includes:

[0026] Comparing the interference frequency corresponding to the field intensity mean with a skin frequency threshold;

[0027] Wherein, the skin frequency threshold is calculated and determined according to the skin depth threshold;

[0028] In response to the interference frequency being less than or equal to the skin frequency threshold, the field intensity mean is corrected and calculated.

[0029] Optionally, the correcting calculation of the field intensity mean value includes:

[0030] The field intensity mean is corrected according to the electric field intensity of multiple points in the target analysis area:

[0031] E avg_V =∫∫∫ V E dS dσ / V

[0032] Among them, E avg_V represents the corrected mean value of the field intensity, E represents the electric field intensity, S represents the sampling surface, σ represents the skin depth, and V represents the volume of the integration domain.

[0033] Optionally, calculating and determining the electric field shielding effectiveness according to the ratio of the field intensity mean values ​​corresponding to the first state and the second state includes:

[0034]

[0035] Wherein, SE represents the electric field shielding effectiveness, E avg_1 ,E avg_2 Respectively represent the mean values ​​of the field strength corresponding to the first state and the second state.

[0036] In a second aspect, the embodiment of the present application further provides an electric field shielding effectiveness calculation system, comprising:

[0037] An electric field interference unit, used for providing an interference electric field so that the electronic device under test is placed in the interference electric field, wherein the electronic device under test has a first state where a shielding shell is removed and a second state where a shielding shell is provided;

[0038] An electric field information acquisition unit, used for adjusting the field parameters of the interfering electric field and acquiring the electric field information of the target analysis area in the electronic device under test under different field parameters when the electronic device under test is in the first state and the second state respectively;

[0039] A field intensity mean value calculation unit, used to calculate and determine the field intensity mean value of the target analysis area according to the electric field information;

[0040] The electric field shielding effectiveness calculation unit is used to calculate and determine the electric field shielding effectiveness according to the ratio of the field intensity average values ​​corresponding to the first state and the second state.

[0041] The electric field shielding effectiveness calculation system is used to execute the electric field shielding effectiveness calculation method as described in the first aspect.

[0042] In a third aspect, an embodiment of the present application further provides an electric field shielding effectiveness calculation electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the computer program, the electric field shielding effectiveness calculation method as described in the first aspect is implemented.

[0043] It can be seen from the above that the electric field shielding effectiveness calculation method, system and electronic device provided by the present application have the following beneficial technical effects:

[0044] (1) The electric field shielding effectiveness calculation method is to place the electronic device to be tested in an interference electric field, and to calculate the electric field shielding effectiveness by collecting electric field information of the electronic device to be tested in two states: when the shielding shell is removed and when the shielding shell is set. Among them, when collecting the electric field information, the field parameters of the interference electric field are adjusted to obtain the electric field information under different field parameters, so as to ensure the comprehensiveness of the obtained electric field information. When calculating the electric field shielding effectiveness, the mean field strength of the target analysis area of ​​the electronic device to be tested is calculated and determined based on the collected electric field information. The field strength mean can accurately characterize and measure the electric field state in the electronic device to be tested, thereby ensuring the accuracy of the electric field shielding effectiveness calculated based on the field strength mean. In this way, the electric field shielding effectiveness can be comprehensively and accurately calculated.

[0045] (2) In the electric field shielding effectiveness calculation method, the collected electric field information includes the electric field strength at multiple points in the target analysis area. The electric field strength is used to indicate the strength and direction of the electric field. Collecting the electric field strength at multiple points as the electric field information can ensure the comprehensiveness of the electric field information in the horizontal three-dimensional space.

[0046] The field parameters adjusted include the interference frequency of the interference electric field and the interference field strength at the interference field source. Frequency and field strength are two important indicators for characterizing the interference electric field, and are also important electrical characteristics that may affect the electronic devices to be tested in the interference electric field. By adjusting the interference frequency and the interference field strength when collecting the electric field information, the electric field information corresponding to multiple different frequencies and field strengths can be obtained, and the comprehensiveness of the electric field information can be further improved vertically at the level of electric field electrical characteristics.

[0047] (3) In the electric field shielding effectiveness calculation method, the symmetry of the electric field in the target analysis area is judged.

[0048] For the target analysis area with symmetrical electric field distribution, the symmetry axis is selected as the sampling curve, and the curve sampling method is used to calculate the field strength mean. In the case of symmetrical electric field distribution, the electric field information on the symmetry axis can accurately characterize the overall state of the target analysis area. Therefore, the symmetry axis can be selected as the sampling curve, and only the electric field strength data of multiple points on the sampling curve need to be selected to calculate the field strength mean. While ensuring the accuracy of the calculated field strength mean, the amount of calculated data can be reduced, thereby improving the operation efficiency.

[0049] For the target analysis area with asymmetrical electric field distribution, the surface where the target analysis area is located is used as the sampling surface, and the mean field strength is calculated by surface sampling. In the case of asymmetrical electric field distribution, the electric field distribution in the target analysis area is more complex and disordered, so the electric field information of the entire area is required to calculate the mean field strength. The mean field strength calculated and determined in this way can cover all the electric field state information of the target analysis area, and the mean field strength data is accurate and reliable.

[0050] (4) In the electric field shielding effectiveness calculation method, the influence of the skin effect on the electric field state of the target analysis area is also taken into account. The interference frequency of the interfering electric field is compared with the skin frequency threshold. When the interference frequency of the interfering electric field is less than the skin frequency threshold, the electric field distribution of the target analysis area will be affected by the skin effect. Therefore, in this case, the mean field strength is corrected and calculated to ensure the accuracy of the mean field strength used in calculating the electromagnetic shielding effectiveness, thereby obtaining a more accurate and effective electric field shielding effectiveness. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] The features and advantages of the present application will be more clearly understood by referring to the accompanying drawings, which are schematic and should not be construed as limiting the present application in any way. In the accompanying drawings:

[0052] Figure 1 A schematic flow chart of a method for calculating electric field shielding effectiveness provided by one or more optional embodiments of the present application is shown;

[0053] Figure 2 A schematic diagram showing a method for calculating the mean value of field intensity in a target analysis area in an electric field shielding effectiveness measurement method provided by one or more optional embodiments of the present application is shown;

[0054] Figure 3 Another schematic flow chart of a method for calculating electric field shielding effectiveness provided by one or more optional embodiments of the present application is shown;

[0055] Figure 4 A schematic diagram of a curve showing a change in the mean value of the internal field strength of the electronic device to be tested with the interference frequency in the first state and the second state in one or more optional embodiments of the present application is shown.

[0056] Figure 5 A schematic diagram of a curve showing a change in the electric field shielding effectiveness of an electronic device to be tested with interference frequency in one or more optional embodiments of the present application is shown;

[0057] Figure 6 A schematic diagram of an electric field shielding effectiveness calculation system provided by one or more optional embodiments of the present application is shown;

[0058] Figure 7 A schematic diagram of the structure of an electronic device for measuring electric field shielding effectiveness provided by one or more optional embodiments of the present application is shown. DETAILED DESCRIPTION

[0059] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0060] As science and technology continue to develop, more and more electronic devices such as sensor devices, communication equipment, and computer equipment are being applied to various fields, bringing great convenience to industrial production and people's daily lives. Electronic devices generally include a variety of electronic devices, and their size, power, stability, and functional characteristics will affect the operation of the electronic devices. Many important electronic devices have relatively complex circuits inside, and certain electromagnetic shielding measures need to be taken to prevent external environmental factors from affecting the normal operation of the internal circuits.

[0061] For example, in a fiber optic sensor, the light source device is one of the most important components. The quality and stability of the light generated by the light source will directly affect the working parameters of the sensor, such as sensitivity, resolution and measurement accuracy. When selecting a light source, many factors such as the size, output power, stability, and spectral characteristics of the light source component should be considered. In addition, the cost of the light source will also have an important impact on the price of the overall sensor. Therefore, it is crucial to choose a suitable and reliable light source for fiber optic sensors. Since the semiconductor light source element of the fiber optic sensor contains a light-emitting circuit, if certain electromagnetic shielding measures are not taken, it may affect the normal operation of the internal circuit, thereby affecting the stability of the output power and destroying the working characteristics of the semiconductor laser. In severe cases, the laser may even fail to work. Therefore, it is crucial to obtain the internal electric field distribution and corresponding electromagnetic shielding effectiveness data of the semiconductor light source device in the external electromagnetic field, and to optimize the structure reasonably based on this.

[0062] Some related technologies have relatively simple methods for measuring electric field shielding effectiveness, so there is an urgent need to provide a more comprehensive and accurate electric field shielding effectiveness measurement solution.

[0063] The technical solution of this application is described below in conjunction with specific embodiments.

[0064] In a first aspect, an embodiment of the present application provides a method for calculating electric field shielding effectiveness.

[0065] like Figure 1 As shown, one or more optional embodiments of the present application provide a method for calculating electric field shielding effectiveness, including:

[0066] S1: placing an electronic device under test in an interference electric field, wherein the electronic device under test has a first state in which a shielding shell is removed and a second state in which a shielding shell is installed.

[0067] The electronic device to be tested may be a light source device in an optical fiber sensor, a signal modem device in a communication device, or a signal processing device, a microprocessor, etc. in a computer device. The electronic device to be tested includes a shielding shell, which may be fixedly arranged in the electronic device to be tested or may be removed from the electronic device to be tested.

[0068] The electronic device to be tested can be placed in an interference electric field by arranging an interference field source near the electronic device to be tested. When the shielding shell is fixedly arranged on the electronic device to be tested, the electronic device to be tested is in a first state, in which the shielding shell shields the interference electric field; when the shielding shell is removed from the electronic device to be tested, the electronic device to be tested is in a second state, in which the electronic device to be tested is exposed to the interference electric field.

[0069] S2: respectively in the first state and the second state, adjusting the field parameters of the interfering electric field and collecting the electric field information of the target analysis area in the electronic device to be tested under different field parameters.

[0070] The field parameters can be adjusted multiple times in different states of the electronic device to be tested, and the electric field information in the target analysis area of ​​the electronic device to be tested is collected each time the adjustment is made. Thus, the electric field information corresponding to the target analysis area in different states under multiple different field parameter conditions can be obtained. In some optional embodiments, the electric field information includes the electric field strength of multiple points uniformly distributed in the target analysis area. The electric field strength is used to indicate the strength and direction of the electric field. The electric field strength of multiple points is collected as the electric field information to ensure the comprehensiveness of the electric field information at the three-dimensional spatial level. The electric field information can also include corresponding electric field area information, electric field line information, whether there is electric field superposition, and other situation information.

[0071] Among them, the target analysis area refers to the setting area of ​​the main circuit in the electronic device to be tested. Taking the light source device in the optical fiber sensor as an example, the light source device includes a shielding shell, an optical fiber, a light source circuit that provides an optical signal to the optical fiber, and a heat sink element that cools and cools the light source circuit. The light source circuit is arranged in direct contact with the heat sink element, and the upper surface of the heat sink element can be selected as the target analysis area. Similarly, taking the signal processing device in the computer equipment as an example, the core processing circuit of the signal processing is generally integrated on the circuit substrate, and the upper surface of the circuit substrate can be selected as the target analysis area.

[0072] S3: Calculate and determine the mean value of the field intensity of the target analysis area according to the electric field information.

[0073] A plurality of representative positions can be selected in the target analysis area, the corresponding electric field strengths at the plurality of representative positions can be determined, and the field strength mean can be calculated based on the electric field strength data at the plurality of representative positions. The selection of the plurality of representative positions can be selected according to the specific geometric shape of the target analysis area, such as vertices, equally divided points of multiple edges, equally divided points of connecting lines of non-adjacent vertices, center points, etc. In some optional embodiments, the target analysis area can also be divided into arrays, with the vertex of each array element serving as a representative position. The array division method can be a honeycomb array division, a square array division, an equilateral triangle array division, etc.

[0074] The electric field information is calculated to determine the field intensity average value, and the field intensity average value is used to characterize and measure the electric field state in the electronic device to be tested.

[0075] S4: Calculate and determine the electric field shielding effectiveness according to the ratio of the field intensity averages corresponding to the first state and the second state.

[0076] For a certain field parameter, the field intensity averages corresponding to the first state and the second state of the target analysis area under corresponding conditions are determined. The field intensity averages corresponding to the first state and the second state can be compared, and the electric field shielding effectiveness corresponding to the field parameter can be determined based on the ratio of the two. Furthermore, multiple electric field shielding effectiveness corresponding to multiple different field parameter conditions can be determined.

[0077] The electric field shielding effectiveness calculation method sets the electronic device to be tested in an interference electric field, and calculates the electric field shielding effectiveness by collecting electric field information of the electronic device to be tested in two states: removing the shielding shell and setting the shielding shell. Among them, when collecting the electric field information, the field parameters of the interference electric field are adjusted to obtain the electric field information under different field parameters, which can ensure the comprehensiveness of the acquired electric field information. When calculating the electric field shielding effectiveness, the mean field strength of the target analysis area of ​​the electronic device to be tested is calculated and determined based on the collected electric field information. The field strength mean can accurately characterize and measure the electric field state in the electronic device to be tested, thereby ensuring the accuracy of the electric field shielding effectiveness calculated based on the field strength mean. In this way, the electric field shielding effectiveness can be comprehensively and accurately calculated.

[0078] In an electric field shielding effectiveness calculation method provided in one or more optional embodiments of the application, the field parameters include the interference frequency of the interference electric field and the interference field strength of the interference field source.

[0079] Optionally, the interference frequency can be set to a range of 50 Hz to 10 GHz. The interference field strength of the interference field source can be set to a range of 1 V / m to 5 V / m. It can be understood by those skilled in the art that the specific values ​​of the interference frequency and the interference field strength can be flexibly set according to actual conditions.

[0080] In some optional embodiments, the field parameters may also include the distance between the interference field source and the electronic device to be tested. Taking the light source device in the optical fiber sensor as an example, the interference field source can be set on the central axis of the shielding shell in the light source device, so that the propagation direction of the electromagnetic wave is perpendicular to the opening on the shielding shell for leading out the optical fiber. When the interference field strength of the interference field source is 5V / m, the vertical distance between the interference field source and the shielding shell can be set to 50mm. It can also be understood by those skilled in the art that the distance between the interference field source and the shielding shell can be flexibly adjusted according to actual conditions.

[0081] In the electric field shielding effectiveness calculation method, the field parameters adjusted include the interference frequency of the interference electric field and the interference field strength at the interference field source. Frequency and field strength are two important indicators for characterizing the interference electric field, and are also important electrical characteristics that may affect the electronic devices to be tested in the interference electric field. By adjusting the interference frequency and the interference field strength when collecting the electric field information, the electric field information corresponding to multiple different frequencies and field strengths can be obtained, and the comprehensiveness of the electric field information can be further improved vertically at the level of electric field electrical characteristics.

[0082] like Figure 2As shown, in an electric field shielding effectiveness calculation method provided by one or more optional embodiments of the present application, the step of calculating and determining the mean field strength of the target analysis area according to the electric field information includes:

[0083] S201: Determine the symmetry of the electric field in the target analysis area according to the electric field information.

[0084] Symmetry can be determined based on the distribution law of field strength data of multiple points evenly distributed in the target analysis area. In some optional embodiments, symmetry can also be determined based on component geometric dimensions, multiple component shapes, and multiple component distribution laws in the electronic device to be tested.

[0085] S202: In response to the symmetrical distribution of the electric field in the target analysis area, a symmetry axis is selected as a sampling curve, and the field intensity mean is calculated by using a curve sampling method.

[0086] In some optional embodiments of the application, the method of calculating the field intensity mean value by using a curve sampling method includes:

[0087] The electric field strengths at a plurality of sampling points on the sampling curve are determined.

[0088] According to the electric field strength of the plurality of sampling points, a line integral mean along the sampling curve is calculated and determined as the field strength mean value:

[0089] E avg_l =∫ l E dl / l

[0090] Among them, E avg_l represents the line integral mean, E represents the electric field intensity, and l represents the sampling curve.

[0091] S203: In response to the asymmetric distribution of the electric field in the target analysis area, the surface where the target analysis area is located is used as a sampling curved surface, and the mean value of the field intensity is calculated by adopting a curved surface sampling method.

[0092] In some optional embodiments of the present application, the method of calculating the field intensity mean value by using a curved surface sampling method includes:

[0093] The electric field strength at a plurality of sampling points on the sampling surface is determined.

[0094] According to the electric field strength of the plurality of sampling points, the surface integral mean along the sampling curved surface is calculated and determined as the field strength mean:

[0095]

[0096] Among them, E avg_srepresents the surface integral mean, E represents the electric field intensity, and S represents the sampling surface.

[0097] In the electric field shielding effectiveness calculation method, the symmetry of the electric field in the target analysis area is judged.

[0098] For the target analysis area with symmetrical electric field distribution, the symmetry axis is selected as the sampling curve, and the curve sampling method is used to calculate the field strength mean. In the case of symmetrical electric field distribution, the electric field information on the symmetry axis can accurately characterize the overall state of the target analysis area. Therefore, the symmetry axis can be selected as the sampling curve, and only the electric field strength data of multiple points on the sampling curve need to be selected to calculate the field strength mean. While ensuring the accuracy of the calculated field strength mean, the amount of calculated data can be reduced, thereby improving the operation efficiency.

[0099] For the target analysis area with asymmetrical electric field distribution, the surface where the target analysis area is located is used as the sampling surface, and the mean field strength is calculated by surface sampling. In the case of asymmetrical electric field distribution, the electric field distribution in the target analysis area is more complex and disordered, so the electric field information of the entire area is required to calculate the mean field strength. The mean field strength calculated and determined in this way can cover all the electric field state information of the target analysis area, and the mean field strength data is accurate and reliable.

[0100] like Figure 3 As shown, one or more optional embodiments of the present application provide an electric field shielding effectiveness calculation method, before calculating and determining the electric field shielding effectiveness according to the ratio of the field strength mean values ​​corresponding to the first state and the second state, further comprising:

[0101] S301: Compare the interference frequency corresponding to the field intensity mean with a skin frequency threshold.

[0102] The skin frequency threshold is determined by calculating the skin depth threshold, and the skin depth threshold can be determined according to the geometric dimensions of the components in the electronic device to be tested.

[0103] S302: In response to the interference frequency being less than or equal to the skin frequency threshold, performing correction calculation on the field intensity mean.

[0104] When calculating the mean field strength in the target analysis area, it is necessary to take into account the possible impact of the skin effect on the electric field strength. When the skin depth is close to the size of the circuit conductor, the electric field inside the conductor needs to be considered. At this time, the electric field inside the conductor will affect the electric field in the internal space of the shielding shell. The electric field state analysis of the target analysis area needs to be extended to the space enclosed by the shielding shell, and the mean field strength is corrected and calculated based on the internal space of the shielding shell.

[0105] The correcting calculation of the field intensity mean value comprises:

[0106] The field intensity mean is corrected according to the electric field intensity of multiple points in the target analysis area:

[0107] E avg_V =∫∫∫ V E dS dσ / V

[0108] Among them, E avg_V represents the corrected field intensity mean, E represents the electric field intensity, S represents the sampling surface, σ represents the skin depth, V represents the volume of the integration domain, and the integration domain corresponds to the space enclosed by the shielding shell.

[0109] When the skin depth is much smaller than the conductor size, it is considered that the electric field is mainly distributed on the conductor surface, and the error caused by the skin depth can be ignored.

[0110] Taking the light source device in the optical fiber sensor as an example, the upper surface of the heat sink element is used as the target analysis area. In some optional embodiments, the length and width of the upper surface of the heat sink element are both greater than 1 mm. When the skin depth is less than 0.1 mm, the electric field is mainly distributed on the conductor surface, and the skin depth threshold is 0.1 mm. The corresponding skin frequency threshold can be calculated according to the skin depth calculation formula.

[0111]

[0112] Wherein, σ is the skin depth, f represents the interference frequency, μ represents the magnetic permeability, and γ represents the electrical conductivity. According to the above formula and the skin depth threshold, the skin frequency threshold can be calculated to be 0.44MHz. Therefore, when the interference frequency corresponding to the mean value of the field strength of the interference electric field is less than 0.44MHz, it is necessary to consider the influence of the electric field inside the conductor and perform a correction calculation on the mean value of the field strength.

[0113] In the electric field shielding effectiveness calculation method, the influence of the skin effect on the electric field state of the target analysis area is also taken into account. The interference frequency of the interfering electric field is compared with the skin frequency threshold. When the interference frequency of the interfering electric field is less than the skin frequency threshold, the electric field distribution of the target analysis area will be affected by the skin effect. Therefore, in this case, the mean field strength is corrected and calculated to ensure the accuracy of the mean field strength used to calculate the electromagnetic shielding effectiveness, thereby obtaining a more accurate and effective electric field shielding effectiveness.

[0114] In an electric field shielding effectiveness calculation method provided in one or more optional embodiments of the present application, the electric field shielding effectiveness is calculated and determined according to the ratio of the field strength mean values ​​corresponding to the first state and the second state, including:

[0115] Performing a logarithmic operation on the ratio of the field intensity mean values ​​corresponding to the first state and the second state, and calculating and determining the electric field shielding effectiveness according to the logarithmic operation result:

[0116]

[0117] Wherein, SE represents the electric field shielding effectiveness, E avg_1 ,E avg_2 Respectively represent the mean values ​​of the field strength corresponding to the first state and the second state.

[0118] According to the above method, by calculating the field intensity averages corresponding to the first state and the second state in the target analysis area under a certain field parameter condition, the accurate electric field shielding effectiveness corresponding to the field parameter can be obtained.

[0119] It should be noted that the method of the embodiment of the present application can be performed by a single device, such as a computer or server. The method of this embodiment can also be applied to a distributed scenario and completed by multiple devices cooperating with each other. In the case of such a distributed scenario, one of the multiple devices can only perform one or more steps in the method of the embodiment of the present application, and the multiple devices will interact with each other to complete the described method.

[0120] It should be noted that the above describes some embodiments of the present application. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in an order different from that in the above embodiments and still achieve the desired results. In addition, the processes depicted in the accompanying drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0121] In some optional embodiments, analysis is performed on the condition that only the interference frequency is adjusted.

[0122] Figure 4 The curves showing the change of the mean internal field strength of the electronic device to be tested with the interference frequency in the first state and the second state. The electric field shielding effectiveness of the light source device in the optical fiber sensor is measured using the electric field shielding effectiveness calculation method provided in the embodiment of the present application, and the curve showing the change of the mean field strength in the target analysis area with the interference frequency of the interference electric field. It can be seen that at 50Hz-1GHz, the shielding effect of the shielding shell on external electric field interference is obvious. When placed in an electric field environment greater than 1GHz, the internal electric field strength fluctuates violently, indicating that the shielding effect of the shell on high-frequency electromagnetic interference is unstable.

[0123] Figure 5The curve of the electric field shielding effectiveness of the electronic device under test changing with the interference frequency is shown. It can be clearly seen that the shielding effectiveness changes in different frequency bands: the shielding effectiveness in the 50-1kHz segment is low and unstable, the shielding effectiveness in the 1kHz-100kHz segment increases steadily, the shielding effectiveness in the 100kHz-1MHz segment fluctuates and rises, the shielding effectiveness in the 1MHz-1GHz segment is stable, and the shielding efficiency in the segment greater than 1GHz fluctuates violently, indicating that the existing shell material structure is unstable in shielding performance for electric field interference greater than 1GHz, and it is necessary to optimize the shell structure or replace high-performance electric field shielding materials to effectively suppress energy efficiency fluctuations.

[0124] Based on the same invention purpose as the first aspect, in the second aspect, an embodiment of the present application provides an electric field shielding effectiveness calculation system.

[0125] like Figure 6 As shown, one or more optional embodiments of the present application provide an electric field shielding effectiveness measurement system, comprising:

[0126] An electric field interference unit 601 is used to provide an interference electric field so that the electronic device under test is placed in the interference electric field, and the electronic device under test has a first state in which a shielding shell is removed and a second state in which a shielding shell is provided;

[0127] An electric field information acquisition unit 602 is used to adjust the field parameters of the interference electric field and acquire electric field information of a target analysis area in the electronic device under test under different field parameters when the electronic device under test is in the first state and the second state respectively;

[0128] A field intensity average value calculation unit 603, configured to calculate and determine the field intensity average value of the target analysis area according to the electric field information;

[0129] The electric field shielding effectiveness calculation unit 604 is used to calculate and determine the electric field shielding effectiveness according to the ratio of the field intensity average values ​​corresponding to the first state and the second state.

[0130] In an electric field shielding effectiveness measurement system provided by one or more optional embodiments of the present application, the field parameters include the interference frequency of the interference electric field and the interference field strength of the interference field source;

[0131] The electric field information includes electric field intensities uniformly distributed at a plurality of points in the target analysis region.

[0132] In an electric field shielding effectiveness measurement system provided by one or more optional embodiments of the present application, the field strength mean calculation unit 603 is also used to judge the symmetry of the electric field in the target analysis area based on the electric field information; in response to the symmetrical distribution of the electric field in the target analysis area, the symmetry axis is selected as the sampling curve, and the field strength mean is calculated by using a curve sampling method; in response to the asymmetrical distribution of the electric field in the target analysis area, the surface where the target analysis area is located is used as a sampling surface, and the field strength mean is calculated by using a surface sampling method.

[0133] In an electric field shielding effectiveness measurement system provided by one or more optional embodiments of the present application, the field strength mean value calculation unit 603 is further used to determine the electric field strength of multiple sampling points on the sampling curve; and to calculate and determine the line integral mean along the sampling curve according to the electric field strength of the multiple sampling points as the field strength mean value:

[0134] E avg_l =∫ l E dl / l

[0135] Among them, E avg_l represents the line integral mean, E represents the electric field intensity, and l represents the sampling curve.

[0136] In an electric field shielding effectiveness measurement system provided by one or more optional embodiments of the present application, the field strength mean value calculation unit 603 is further used to determine the electric field strength of multiple sampling points on the sampling surface;

[0137] According to the electric field strength of the plurality of sampling points, the surface integral mean along the sampling curved surface is calculated and determined as the field strength mean:

[0138]

[0139] Among them, E avg_S represents the surface integral mean, E represents the electric field intensity, and S represents the sampling surface.

[0140] One or more optional embodiments of the present application provide an electric field shielding effectiveness measurement system, further comprising a field strength mean correction unit;

[0141] The field intensity mean correction unit is used to compare the interference frequency corresponding to the field intensity mean with a skin frequency threshold, wherein the skin frequency threshold is determined based on a skin depth threshold; in response to the interference frequency being less than or equal to the skin frequency threshold, the field intensity mean is corrected and calculated.

[0142] In an electric field shielding effectiveness measurement system provided by one or more optional embodiments of the present application, the field strength mean correction unit is further used to correct the field strength mean according to the electric field strengths of multiple points in the target analysis area:

[0143] E avg_V =∫∫∫ V E dS dσ / V

[0144] Among them, E avg_V represents the corrected mean value of the field intensity, E represents the electric field intensity, S represents the sampling surface, σ represents the skin depth, and V represents the volume of the integration domain.

[0145] In an electric field shielding effectiveness calculation system provided by one or more optional embodiments of the present application, the electric field shielding effectiveness calculation unit 604 is further used to perform a logarithmic operation on the ratio of the field strength mean values ​​corresponding to the first state and the second state, and determine the electric field shielding effectiveness according to the logarithmic operation result:

[0146]

[0147] Wherein, SE represents the electric field shielding effectiveness, E avg_1 ,E avg_2 Respectively represent the mean values ​​of the field strength corresponding to the first state and the second state.

[0148] The systems, devices, modules or units described in the above embodiments may be implemented by computer chips or entities, or by products with certain functions. A typical implementation device is a computer. Specifically, the computer may be, for example, a personal computer, a laptop computer, a cellular phone, a camera phone, a smart phone, a personal digital assistant, a media player, a navigation device, an email device, a game console, a tablet computer, a wearable device, or a combination of any of these devices.

[0149] For the convenience of description, the above device is described in various units according to their functions. Of course, when implementing the present application, the functions of each unit can be implemented in the same or multiple software and / or hardware.

[0150] The system of the above embodiment is used to implement the corresponding electric field shielding effectiveness calculation method in any of the above embodiments, and has the beneficial effects of the corresponding method embodiment, which will not be described in detail here.

[0151] Based on the same inventive concept, corresponding to any of the above-mentioned embodiments and methods, the present disclosure also provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the program, the electric field shielding effectiveness calculation method described in any of the above embodiments is implemented.

[0152] Figure 7 A more specific schematic diagram of the hardware structure of an electronic device provided in this embodiment is shown, and the device may include: a processor 1010, a memory 1020, an input / output interface 1030, a communication interface 1040, and a bus 1050. The processor 1010, the memory 1020, the input / output interface 1030, and the communication interface 1040 are connected to each other through the bus 1050 in the device.

[0153] The processor 1010 can be implemented by a general-purpose CPU (Central Processing Unit), a microprocessor, an application-specific integrated circuit (ASIC), or one or more integrated circuits, and is used to execute relevant programs to implement the technical solutions provided in the method embodiments of this specification.

[0154] The memory 1020 may be implemented in the form of ROM (Read Only Memory), RAM (Random Access Memory), static storage device, dynamic storage device, etc. The memory 1020 may store an operating system and other application programs. When the technical solutions provided in the embodiments of this specification are implemented by software or firmware, the relevant program codes are stored in the memory 1020 and are called and executed by the processor 1010.

[0155] The input / output interface 1030 is used to connect the input / output module to realize information input and output. The input / output module can be configured in the device as a component (not shown in the figure), or it can be externally connected to the device to provide corresponding functions. The input device may include a keyboard, a mouse, a touch screen, a microphone, various sensors, etc., and the output device may include a display, a speaker, a vibrator, an indicator light, etc.

[0156] The communication interface 1040 is used to connect a communication module (not shown) to realize communication interaction between the device and other devices. The communication module can realize communication through a wired mode (such as USB, network cable, etc.) or a wireless mode (such as mobile network, WIFI, Bluetooth, etc.).

[0157] The bus 1050 includes a path that transmits information between the various components of the device (eg, the processor 1010, the memory 1020, the input / output interface 1030, and the communication interface 1040).

[0158] It should be noted that, although the above device only shows the processor 1010, the memory 1020, the input / output interface 1030, the communication interface 1040 and the bus 1050, in the specific implementation process, the device may also include other components necessary for normal operation. In addition, it can be understood by those skilled in the art that the above device may also only include the components necessary for implementing the embodiments of the present specification, and does not necessarily include all the components shown in the figure.

[0159] The electronic device of the above embodiment is used to implement the corresponding electric field shielding effectiveness calculation method in any of the above embodiments, and has the beneficial effects of the corresponding method embodiment, which will not be described in detail here.

[0160] Based on the same inventive concept, corresponding to any of the above-mentioned embodiment methods, the present application also provides a non-transitory computer-readable storage medium, wherein the non-transitory computer-readable storage medium stores computer instructions, and the computer instructions are used to enable the computer to execute the electric field shielding effectiveness measurement method described in any of the above embodiments.

[0161] The computer-readable medium of this embodiment includes permanent and non-permanent, removable and non-removable media, and information storage can be implemented by any method or technology. Information can be computer-readable instructions, data structures, modules of programs, or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, read-only compact disk read-only memory (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices or any other non-transmission media that can be used to store information that can be accessed by a computing device.

[0162] The computer instructions stored in the storage medium of the above embodiment are used to enable the computer to execute the electric field shielding effectiveness calculation method described in any of the above embodiments, and have the beneficial effects of the corresponding method embodiments, which will not be repeated here.

[0163] Those skilled in the art should understand that the discussion of any of the above embodiments is merely illustrative and is not intended to imply that the scope of the present application (including the claims) is limited to these examples. In line with the concept of the present application, the technical features in the above embodiments or different embodiments may be combined, the steps may be implemented in any order, and there are many other variations of the different aspects of the embodiments of the present application as described above, which are not provided in detail for the sake of simplicity.

[0164] In addition, to simplify the description and discussion, and in order not to make the embodiments of the present application difficult to understand, the known power supply / ground connection with the integrated circuit (IC) chip and other components may or may not be shown in the provided drawings. In addition, the device can be shown in the form of a block diagram to avoid making the embodiments of the present application difficult to understand, and this also takes into account the fact that the details of the implementation of these block diagram devices are highly dependent on the platform to be implemented in the embodiments of the present application (that is, these details should be fully within the scope of understanding of those skilled in the art). In the case of elaborating specific details (e.g., circuits) to describe exemplary embodiments of the present application, it is obvious to those skilled in the art that the embodiments of the present application can be implemented without these specific details or when these specific details are changed. Therefore, these descriptions should be considered to be illustrative rather than restrictive.

[0165] Although the present application has been described in conjunction with specific embodiments of the present application, many replacements, modifications and variations of these embodiments will be apparent to those skilled in the art from the foregoing description. For example, other memory architectures (e.g., dynamic RAM (DRAM)) may use the embodiments discussed.

[0166] The embodiments of the present application are intended to cover all such substitutions, modifications and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the embodiments of the present application should be included in the scope of protection of the present application.

Claims

1. A method for calculating electric field shielding effectiveness, characterized in that: The method comprises: The electronic device under test is placed in an interfering electric field, wherein the electronic device under test has a first state where a shielding shell is removed and a second state where a shielding shell is installed; In the first state and the second state respectively, adjusting the field parameters of the interfering electric field and collecting the electric field information of the target analysis area in the electronic device to be tested under different field parameters; Calculate and determine the mean value of the field intensity of the target analysis area according to the electric field information; Calculate and determine the electric field shielding effectiveness according to the ratio of the field intensity mean values ​​corresponding to the first state and the second state; The calculating and determining the field intensity mean value of the target analysis area according to the electric field information includes: Performing symmetry judgment on the electric field of the target analysis area according to the electric field information; In response to the symmetrical distribution of the electric field in the target analysis area, a symmetry axis is selected as a sampling curve, and the field intensity mean is calculated by using a curve sampling method; In response to the asymmetric distribution of the electric field in the target analysis area, the surface where the target analysis area is located is used as a sampling curved surface, and the mean value of the field intensity is calculated by adopting a curved surface sampling method; The method of calculating the field intensity mean value by adopting a curve sampling method includes: Determining the electric field strength at a plurality of sampling points on the sampling curve; According to the electric field strength of the plurality of sampling points, a line integral mean along the sampling curve is calculated and determined as the field strength mean value: It is avg_l =∫ l He / She is Mr / Mr. Among them, E avg_l represents the line integral mean, E represents the electric field intensity, and l represents the sampling curve; The method of calculating the field intensity mean value by using a curved surface sampling method includes: Determine the electric field strength at a plurality of sampling points on the sampling surface; According to the electric field strength of the plurality of sampling points, the surface integral mean along the sampling curved surface is calculated and determined as the field strength mean: Among them, E avg_S represents the surface integral mean, E represents the electric field intensity, and S represents the sampling surface.

2. The method according to claim 1, characterized in that The field parameters include the interference frequency of the interference electric field and the interference field strength of the interference field source; The electric field information includes electric field intensities uniformly distributed at a plurality of points in the target analysis region.

3. The method according to claim 2, characterized in that Before calculating and determining the electric field shielding effectiveness according to the ratio of the field intensity averages corresponding to the first state and the second state, the method further includes: Comparing the interference frequency corresponding to the field intensity mean with a skin frequency threshold; Wherein, the skin frequency threshold is calculated and determined according to the skin depth threshold; In response to the interference frequency being less than or equal to the skin frequency threshold, the field intensity mean is corrected and calculated.

4. The method according to claim 3, characterized in that The correcting calculation of the field intensity mean value comprises: The field intensity mean is corrected according to the electric field intensity of multiple points in the target analysis area: E avg_V =∫∫∫ V E dS dσ / V Among them, E avg_V represents the corrected mean value of the field intensity, E represents the electric field intensity, S represents the sampling surface, σ represents the skin depth, and V represents the volume of the integration domain.

5. The method according to claim 1, characterized in that The calculating and determining the electric field shielding effectiveness according to the ratio of the field intensity averages corresponding to the first state and the second state comprises: Wherein, SE represents the electric field shielding effectiveness, E avg_1 ,E avg_2 Respectively represent the mean values ​​of the field strength corresponding to the first state and the second state.

6. An electric field shielding effectiveness measurement system, characterized in that: The system comprises: An electric field interference unit, used for providing an interference electric field so that the electronic device under test is placed in the interference electric field, wherein the electronic device under test has a first state where a shielding shell is removed and a second state where a shielding shell is provided; An electric field information acquisition unit, used for adjusting the field parameters of the interfering electric field and acquiring the electric field information of the target analysis area in the electronic device under test under different field parameters when the electronic device under test is in the first state and the second state respectively; A field intensity mean value calculation unit, used to calculate and determine the field intensity mean value of the target analysis area according to the electric field information; An electric field shielding effectiveness calculation unit, configured to calculate and determine the electric field shielding effectiveness according to a ratio of the field intensity averages corresponding to the first state and the second state; The calculating and determining the field intensity mean value of the target analysis area according to the electric field information includes: Performing symmetry judgment on the electric field of the target analysis area according to the electric field information; In response to the symmetrical distribution of the electric field in the target analysis area, a symmetry axis is selected as a sampling curve, and the field intensity mean is calculated by using a curve sampling method; In response to the asymmetric distribution of the electric field in the target analysis area, the surface where the target analysis area is located is used as a sampling curved surface, and the mean value of the field intensity is calculated by adopting a curved surface sampling method; The method of calculating the field intensity mean value by adopting a curve sampling method includes: Determining the electric field strength at a plurality of sampling points on the sampling curve; According to the electric field strength of the plurality of sampling points, a line integral mean along the sampling curve is calculated and determined as the field strength mean value: It is avg_l =∫ l He / She is Mr / Mr. Among them, E avg_l represents the line integral mean, E represents the electric field intensity, and l represents the sampling curve; The method of calculating the field intensity mean value by using a curved surface sampling method includes: Determine the electric field strength at a plurality of sampling points on the sampling surface; According to the electric field strength of the plurality of sampling points, the surface integral mean along the sampling curved surface is calculated and determined as the field strength mean: Among them, E avg_S represents the surface integral mean, E represents the electric field intensity, and S represents the sampling surface.

7. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the computer program, the method according to any one of claims 1 to 5 is implemented.

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