Method for confirming M-plane in gallium nitride substrate and method for cutting gallium nitride substrate

Abstract

The present application provides a method for identifying an M-plane in a gallium nitride substrate and a method for cutting a gallium nitride substrate, comprising: providing a gallium nitride substrate; selecting scanning points on the upper surface of the gallium nitride substrate; performing multiple rocking curve scans on a predetermined crystal plane of the gallium nitride substrate based on the scanning points to obtain multiple Omega curves and multiple scanning angles corresponding to the peaks of the multiple Omega curves; performing a 360° Phi scan on the W-plane of the gallium nitride substrate to obtain multiple Phi values ​​corresponding to the M-plane; and determining the M-plane closest to the bevel angle and the M-plane farthest from the bevel angle in the gallium nitride substrate based on the maximum scanning angle, the minimum scanning angle, and the multiple Phi values ​​among the multiple scanning angles. The above-mentioned method for identifying an M-plane in a gallium nitride substrate can accurately identify the M-plane closest to the bevel angle and the M-plane farthest from the bevel angle in the gallium nitride substrate.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a method for confirming an M-plane in a gallium nitride substrate and a method for cutting a gallium nitride substrate. Background Art

[0002] When growing a gallium nitride substrate, there's often a certain angle (i.e., a bevel angle) between the physical plane of the gallium nitride substrate (e.g., the top surface) and the orientation of the gallium nitride unit cell. This angle causes the gallium nitride unit cell to tilt in a certain direction of the gallium nitride substrate. In the prior art, after obtaining a gallium nitride substrate with a bevel angle, it's necessary to identify the M-face of the gallium nitride substrate closest to the bevel angle and the M-face furthest from the bevel angle, so as to facilitate subsequent processing such as cutting the gallium nitride substrate to the desired surface. However, there's currently no effective method for accurately identifying the M-face of the gallium nitride substrate closest to the bevel angle and the M-face furthest from the bevel angle. Summary of the Invention

[0003] Based on the problem that the existing technology cannot accurately confirm the M-plane of the gallium nitride substrate closest to the bevel angle and the M-plane farthest from the bevel angle, a method for confirming the M-plane in the gallium nitride substrate and a method for cutting the gallium nitride substrate are provided.

[0004] The present application provides a method for confirming an M-plane in a gallium nitride substrate, comprising:

[0005] Providing gallium nitride substrates;

[0006] selecting a scanning point on the upper surface of the gallium nitride substrate;

[0007] Performing multiple rocking curve scans on a preset crystal plane of the gallium nitride substrate based on the scanning points to obtain multiple Omega curves and multiple scanning angles corresponding to peaks of the multiple Omega curves;

[0008] Performing a 360° Phi scan on the W surface of the gallium nitride substrate to obtain a plurality of Phi values ​​corresponding to the M surface;

[0009] Based on a maximum scanning angle, a minimum scanning angle, and a plurality of Phi values ​​among the plurality of scanning angles, an M-plane closest to the off-cut angle and an M-plane farthest from the off-cut angle in the gallium nitride substrate are determined.

[0010] When growing a gallium nitride substrate, a certain angle (i.e., a bevel angle) often exists between the physical plane of the gallium nitride substrate (e.g., the top surface) and the direction of the gallium nitride unit cell. Under such circumstances, the gallium nitride unit cell may tilt toward a certain direction of the gallium nitride substrate. In the above-mentioned method for identifying the M-plane in the gallium nitride substrate, this tilt is utilized to perform multiple rocking curve scans of a preset crystal plane on the gallium nitride substrate, multiple Omega curves, and multiple scanning angles corresponding to the peaks of the multiple Omega curves. Multiple Phi scans are then performed on the W-plane of the gallium nitride substrate to obtain multiple Phi values ​​corresponding to the M-plane. Finally, based on the maximum scanning angle, the minimum scanning angle, and the multiple Phi values ​​among the multiple scanning angles, the M-plane closest to the bevel angle and the M-plane farthest from the bevel angle in the gallium nitride substrate can be accurately identified.

[0011] In one embodiment, the performing multiple rocking curve scans on a predetermined crystal plane of the gallium nitride substrate based on the scanning points to obtain multiple Omega curves and multiple scanning angles corresponding to the peaks of the multiple Omega curves includes:

[0012] Performing a rocking curve scan of the preset crystal plane on the gallium nitride substrate based on the scanning point to obtain an Omega curve of this step, and recording a scanning angle corresponding to a peak value of the Omega curve obtained in this step;

[0013] Rotating the gallium nitride substrate by a preset angle in the XY plane, performing a rocking curve scan of the preset crystal plane on the scanning point again to obtain an Omega curve of this step, and recording the scanning angle corresponding to the peak of the Omega curve obtained in this step;

[0014] Repeat the previous step several times until the gallium nitride substrate is rotated 360 degrees, so as to obtain a plurality of Omega curves and a plurality of scanning angles corresponding to the peaks of the plurality of Omega curves.

[0015] In one embodiment, before performing rocking curve scanning of the preset crystal plane on the gallium nitride substrate based on the scanning points, the method includes:

[0016] Select any point in the XY plane as the scanning starting angle point.

[0017] In one embodiment, the preset crystal plane is the (002) plane.

[0018] In one embodiment, the preset angle is 0.1° to 30°.

[0019] In one embodiment, the preset angle is 1° to 10°.

[0020] In one embodiment, the W-plane of the gallium nitride substrate is a plane parallel to an intersection line of the M-plane of the gallium nitride substrate and the C-plane of the gallium nitride substrate.

[0021] In one embodiment, the W surface of the gallium nitride substrate is a (114) surface or a (102) surface.

[0022] In one embodiment, the rotation angle of the gallium nitride substrate in the XY plane corresponding to the maximum scanning angle is recorded as a first angle, and the rotation angle of the gallium nitride substrate in the XY plane corresponding to the minimum scanning angle is recorded as a second angle; and based on the maximum scanning angle, the minimum scanning angle, and the multiple Phi values ​​among the multiple scanning angles, determining the M-plane closest to the bevel angle and the M-plane farthest from the bevel angle in the gallium nitride substrate includes:

[0023] Comparing the first angle with the plurality of Phi values, the M-plane corresponding to the Phi value whose absolute value of the difference between the first angle and the Phi value is less than or equal to a preset value is the M-plane on the gallium nitride substrate farthest from the bevel angle;

[0024] The second angle is compared with the plurality of Phi values, and the M-plane corresponding to the Phi value whose absolute value of the difference with the second angle is less than or equal to the preset value is the M-plane closest to the bevel angle on the gallium nitride substrate.

[0025] In one example, the preset value is less than or equal to 31°.

[0026] The present application also provides a method for cutting a gallium nitride substrate, comprising:

[0027] Determine the M-plane closest to the bevel angle and the M-plane farthest from the bevel angle in the gallium nitride substrate using the method for confirming the M-plane in the gallium nitride substrate as described in any of the above solutions;

[0028] The gallium nitride substrate is cut from an M-plane of the gallium nitride substrate that is closest to the bevel angle or from an M-plane of the gallium nitride substrate that is farthest from the bevel angle.

[0029] When growing a GaN substrate, a certain angle (i.e., a bevel angle) often exists between the physical plane (e.g., the top surface) of the GaN substrate and the direction of the GaN unit cell. Under such circumstances, the GaN unit cell may tilt toward a certain direction of the GaN substrate. In the above-mentioned method for identifying the M-plane in the GaN substrate, this tilt is utilized to perform multiple rocking curve scans of a preset crystal plane on the GaN substrate, multiple Omega curves, and multiple scanning angles corresponding to the peaks of the multiple Omega curves. Then, multiple Phi scans are performed on the W-plane of the GaN substrate to obtain multiple Phi values ​​corresponding to the M-plane. Finally, based on the maximum scanning angle, the minimum scanning angle, and the multiple Phi values ​​among the multiple scanning angles, the M-plane closest to the bevel angle and the M-plane farthest from the bevel angle in the GaN substrate can be accurately identified. This ensures that when the GaN substrate 10 is cut, it can be precisely cut along the M-plane closest to the bevel angle or the M-plane farthest from the bevel angle in the GaN substrate, thereby ensuring the cutting yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the conventional technology, the following briefly introduces the drawings required for use in the embodiments or the conventional technology descriptions. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0031] Figure 1 This is a flow chart of a method for confirming an M-plane in a gallium nitride substrate provided in one embodiment of the present application;

[0032] Figure 2 Schematic diagram of a top view of a gallium nitride substrate in a method for confirming an M-plane in a gallium nitride substrate provided in one embodiment of the present application;

[0033] Figure 3 A schematic diagram of the three-dimensional structure of a gallium nitride unit cell in a gallium nitride substrate in a method for confirming an M-plane in a gallium nitride substrate provided in an embodiment of the present application;

[0034] Figure 4 Schematic diagram of the cross-sectional structure of a gallium nitride substrate in a method for confirming an M-plane in a gallium nitride substrate provided in one embodiment of the present application;

[0035] Figure 5 This is a flow chart of a method for cutting a gallium nitride substrate provided in another embodiment of the present application.

[0036] Description of reference numerals: 10, gallium nitride substrate; 101, gallium nitride unit cell. DETAILED DESCRIPTION

[0037] To facilitate understanding of the present application, the present application will be described more fully below with reference to the accompanying drawings. The accompanying drawings provide embodiments of the present application. However, the present application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to make the disclosure of the present application more thorough and comprehensive.

[0038] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application.

[0039] It will be understood that the terms "first," "second," etc. used herein may be used to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish a first element from another element.

[0040] It can be understood that the “connection” in the following embodiments should be understood as “electrical connection”, “communication connection”, etc. if there is transmission of electrical signals or data between the connected circuits, modules, units, etc.

[0041] When used herein, the singular forms "a", "an", and "the" may also include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include / comprise" or "have" and the like specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the possibility of the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.

[0042] See also Figure 1 The present application provides a method for confirming an M-plane in a gallium nitride substrate. The method for confirming an M-plane in a gallium nitride substrate may include the following steps:

[0043] S10: providing a gallium nitride substrate;

[0044] S11: selecting a scanning point on the upper surface of the gallium nitride substrate;

[0045] S12: performing multiple rocking curve scans on a preset crystal plane of the gallium nitride substrate based on the scanning points to obtain multiple Omega curves and multiple scanning angles corresponding to peaks of the multiple Omega curves;

[0046] S13: performing a 360° Phi scan on the W surface of the gallium nitride substrate to obtain a plurality of Phi values ​​corresponding to the M surface;

[0047] S14: Determine an M-plane closest to the bevel angle and an M-plane farthest from the bevel angle in the gallium nitride substrate based on a maximum scanning angle, a minimum scanning angle, and a plurality of Phi values ​​among the plurality of scanning angles.

[0048] When growing a gallium nitride substrate, a certain angle (i.e., a bevel angle) often exists between the physical plane of the gallium nitride substrate (e.g., the top surface) and the direction of the gallium nitride unit cell. Under such circumstances, the gallium nitride unit cell may tilt toward a certain direction of the gallium nitride substrate. In the above-mentioned method for identifying the M-plane in the gallium nitride substrate, this tilt is utilized to perform multiple rocking curve scans of a preset crystal plane on the gallium nitride substrate, multiple Omega curves, and multiple scanning angles corresponding to the peaks of the multiple Omega curves. Multiple Phi scans are then performed on the W-plane of the gallium nitride substrate to obtain multiple Phi values ​​corresponding to the M-plane. Finally, based on the rotation angle in the XY plane corresponding to the maximum scanning angle and the minimum scanning angle among the multiple scanning angles and the multiple Phi values, the M-plane closest to the bevel angle and the M-plane farthest from the bevel angle in the gallium nitride substrate can be accurately identified.

[0049] In step S10, refer to Figure 1 S10 steps in Figures 2 to 4 , providing a gallium nitride substrate 10.

[0050] Specifically, the gallium nitride substrate 10 may have a crystal normal and a physical surface normal. The physical surface normal may be a normal to the upper surface of the gallium nitride substrate 10 .

[0051] More specifically, the gallium nitride substrate 10 has a bevel angle, and the bevel angle of the gallium nitride substrate 10 is the angle α between the crystal normal and the physical surface normal, such as Figure 4 shown.

[0052] In step S11, refer to Figure 1 In step S11 , a scanning point is selected on the upper surface of the gallium nitride substrate 10 .

[0053] Specifically, in one example, any point on the surface of the gallium nitride substrate 10 can be selected as the scanning point; for example, the center point of the upper surface of the gallium nitride substrate 10 can be selected as the scanning point; of course, in other examples, the scanning point can also be any point on the upper surface of the gallium nitride substrate 10, which is not limited here.

[0054] More specifically, in one example, the scanning point may be recorded as point A.

[0055] In step S12, refer to Figure 1 S11 and Figures 2 to 4Based on the scanning points, multiple rocking curve scans are performed on the preset crystal plane of the gallium nitride substrate 10 to obtain multiple Omega curves and multiple scanning angles corresponding to the peaks of the multiple Omega curves.

[0056] In one example, in step S12, scanning points are selected on the upper surface of the gallium nitride substrate 10, and multiple rocking curve scans are performed on a predetermined crystal plane of the gallium nitride substrate 10 based on the scanning points to obtain multiple Omega curves and multiple scanning angles corresponding to the peaks of the multiple Omega curves. The following steps may be included:

[0057] S121: performing a rocking curve scan of the preset crystal plane on the gallium nitride substrate 10 based on the scanning points to obtain an Omega curve of this step, and recording a scanning angle corresponding to a peak value of the Omega curve obtained in this step; the scanning angle corresponding to the peak value of the Omega curve obtained in this step is recorded as θ1′;

[0058] S122: Rotate the gallium nitride substrate 10 by a preset angle (the preset angle can be denoted as B) in the XY plane. The rotation of the crystal in the XY plane is represented by Phi. Scan the rocking curve of the preset crystal plane for the scanning point again to obtain the Omega curve of this step, and record the scanning angle corresponding to the peak of the Omega curve obtained in this step; the scanning angle corresponding to the peak of the Omega curve obtained in this step is recorded as θ2'; the XY plane is parallel to the upper surface of the gallium nitride substrate 10, that is, Figure 1 The plane where the X axis and Y axis are located is the XY plane. Figure 4 The physical surface (i.e., the upper surface) of the gallium nitride substrate 10 is parallel to the physical surface (i.e., the upper surface);

[0059] S123: Repeat the previous step several times until the gallium nitride substrate 10 rotates 360°, so as to obtain a plurality of Omega curves and a plurality of scanning angles corresponding to the peaks of the plurality of Omega curves.

[0060] Specifically, before step S121, the process may further include: selecting any point in the XY plane as a scanning starting angle point, and using the scanning starting angle point as a 0° starting point.

[0061] Specifically, in step S121 , the gallium nitride substrate 10 may be placed on an XRD single crystal diffractometer to perform rocking curve scanning of a preselected crystal plane on a scanning point.

[0062] In steps S122 and S123, the GaN substrate 10 may be placed on an XRD single crystal diffractometer to perform rocking curve scanning of a preselected crystal plane at the scanning point. Compared to step S121, the parameters of the XRD single crystal diffractometer may be adjusted to rotate the GaN substrate 10 by a predetermined angle within the XY plane.

[0063] In one example, the preset angle can be 0.1° to 30°. Specifically, the preset angle can be 0.1°, 1°, 5°, 10°, 15°, 20°, 25°, or 30°, etc. The smaller the preset angle, the higher the accuracy. However, the smaller the preset angle, the more rotation scans are required, and the higher the judgment efficiency. On the basis of ensuring that accurate judgment results can be obtained, a reasonable numerical range should be selected as the preset angle to ensure both accurate judgment results and judgment efficiency. Preferably, the preset angle can be 1° to 10°. In this embodiment, the preset angle can be 1°, 5°, or 10°, etc.

[0064] In steps S121 to S123 , how to perform rocking curve scanning of a preset crystal plane on the scanning points is well known to those skilled in the art and will not be described again here.

[0065] In step S123, step S122 is repeated several times. The number of times step S122 is repeated is related to the size of the preset angle. The smaller the preset angle is, the more times step S122 is repeated.

[0066] Specifically, each time the gallium nitride substrate 10 rotates once, an Omega curve and a scanning angle corresponding to the peak of the Omega curve are obtained; taking the preset angle B as an example, after completing a 360° rotation, a total of 360 / B scanning angles can be obtained after the scanning is completed, which can be respectively recorded as θ1', θ2', θ3', θ4'...θ n ';wherein, n=360 / B.

[0067] It should be noted that, since an Omega curve and a scanning angle corresponding to the peak of the Omega curve are obtained for each rotation, each Omega curve and the scanning angle corresponding to the peak of the Omega curve also correspond to a rotation angle of the GaN substrate 10 in the XY plane. For example, taking the preset angle as B, the rotation angle of the GaN substrate 10 in the XY plane corresponding to the Omega curve and the scanning angle corresponding to the peak of the Omega curve obtained for the first time is 0°. The rotation angle of the GaN substrate 10 in the XY plane corresponding to the Omega curve and the scanning angle corresponding to the peak of the Omega curve obtained after one rotation is B. The rotation angle of the GaN substrate 10 in the XY plane corresponding to the Omega curve and the scanning angle corresponding to the peak of the Omega curve obtained after two rotations is 2B, and so on.

[0068] As an example, after obtaining multiple scanning angles, the multiple scanning angles are compared, and the rotation angle of the sample in the XY plane corresponding to the maximum scanning angle θmax and the minimum scanning angle θmin among the multiple scanning angles can be selected; the rotation angle of the sample in the XY plane corresponding to the maximum scanning angle θmax can be recorded as the first angle Phimax, and the rotation angle of the sample in the XY plane corresponding to the minimum scanning angle θmin can be recorded as the second angle Phimin. In steps S121 to S123, an Omega curve can be obtained for each scan, and each Omega curve will have a peak. Each peak of the Omega curve corresponds to a scanning angle during the scanning process of the XRD single crystal diffractometer. At the same time, each scanning angle corresponds to a rotation angle of the gallium nitride substrate 10 in the XY plane.

[0069] In step S13, refer to Figure 1 S12 and Figures 2 to 4 , a 360° Phi scan is performed on the W surface of the gallium nitride substrate 10 to obtain a plurality of Phi values ​​corresponding to the M surface.

[0070] In one example, if Figure 3 As shown, the gallium nitride unit cell 101 is a hexagonal column structure, and the W surface of the gallium nitride substrate 10 is a surface parallel to the intersection line of the M surface of the gallium nitride substrate 10 and the C surface of the gallium nitride substrate 10 (i.e., the 0001 crystal plane). Figure 3 The plane where the line segments AB and C'D' are located, the plane where the line segments A'B' and CD are located, and so on; the (102) crystal plane and the (114) crystal plane in the gallium nitride substrate 10 are all W planes of the gallium nitride substrate 10.

[0071] Depend on Figure 3 As can be seen, the gallium nitride unit cell 101 is a hexagonal prism structure, and its side surface is the M-plane of the gallium nitride substrate 10, with a total of six M-planes. By performing multiple Phi scans on the W-plane of the gallium nitride substrate 10, six Phi values ​​corresponding to the six M-planes can be obtained, that is, each M-plane corresponds to a Phi value from a Phi scan. The six Phi values ​​can be respectively recorded as Phi1, Phi2, Phi3, Phi4, Phi5, and Phi6. It should be noted that the Phi value here is the peak value corresponding to each M-plane during the Phi scan.

[0072] It should be noted that how to perform a 360° Phi scan on the W surface of the gallium nitride substrate 10 is well known to those skilled in the art and will not be described again here.

[0073] In step S14, refer to Figure 1 Step S13 in Figures 2 to 4Based on the maximum scanning angle, the minimum scanning angle and the multiple Phi values ​​among the multiple scanning angles, the M-plane closest to the bevel angle and the M-plane farthest from the bevel angle in the gallium nitride substrate 10 are determined.

[0074] In one example, in step S14, based on a first rotation angle Phimax of the gallium nitride substrate 10 in the XY plane corresponding to a maximum scanning angle among the multiple scanning angles, a second rotation angle Phimin of the gallium nitride substrate 10 in the XY plane corresponding to a minimum scanning angle among the multiple scanning angles, and multiple Phi values, determining the M-plane closest to the bevel angle and the M-plane farthest from the bevel angle in the gallium nitride substrate 10 may include:

[0075] S141: Compare the first angle Phimax with multiple Phi values. The M-plane corresponding to the Phi value whose absolute value of the difference between the first angle Phimax and the Phi value is less than or equal to a preset value is the M-plane on the gallium nitride substrate 10 farthest from the bevel angle.

[0076] S142 : Compare the second angle Phimin with multiple Phi values. The M-plane corresponding to the Phi value whose absolute value of the difference with the second angle Phimin is less than or equal to the preset value is the M-plane on the gallium nitride substrate 10 closest to the bevel angle.

[0077] In one example, the preset value is less than or equal to 31°; specifically, the preset value may be 31°, 30°, 25°, 20°, 15°, 10° or 5°, etc.; preferably, in this embodiment, the preset value may be 31°.

[0078] It should be noted that, among the multiple Phi values, there is only one Phi value whose absolute value of the difference from the first angle Phimax is less than or equal to the preset value, and there is also only one Phi value whose absolute value of the difference from the second angle Phimin is less than or equal to the preset value. Each Phi value corresponds to an M-plane. Through the above-mentioned method for confirming the M-plane in the gallium nitride substrate, the M-plane closest to the bevel angle in the gallium nitride substrate 10 and the M-plane farthest from the bevel angle in the gallium nitride substrate 10 can be accurately determined.

[0079] Please combine Figures 1 to 4 , see Figure 5 The present application also provides a method for cutting a gallium nitride substrate. The method for cutting a gallium nitride substrate may include the following steps:

[0080] S20: determining an M-plane in the gallium nitride substrate 10 that is closest to the bevel angle and an M-plane in the gallium nitride substrate 10 that is farthest from the bevel angle;

[0081] S21 : cutting the gallium nitride substrate 10 from the M-plane closest to the bevel angle or from the M-plane farthest from the bevel angle.

[0082] When growing a GaN substrate, a certain angle (i.e., a bevel angle) often exists between the physical plane (e.g., the top surface) of the GaN substrate and the direction of the GaN unit cell. Under such circumstances, the GaN unit cell may tilt toward a certain direction of the GaN substrate. In the above-mentioned method for identifying the M-plane in the GaN substrate, this tilt is utilized to perform multiple rocking curve scans of a preset crystal plane on the GaN substrate, multiple Omega curves, and multiple scanning angles corresponding to the peaks of the multiple Omega curves. Then, multiple Phi scans are performed on the W-plane of the GaN substrate to obtain multiple Phi values ​​corresponding to the M-plane. Finally, based on the maximum scanning angle, the minimum scanning angle, and the multiple Phi values ​​among the multiple scanning angles, the M-plane closest to the bevel angle and the M-plane farthest from the bevel angle in the GaN substrate can be accurately identified. This ensures that when the GaN substrate 10 is cut, it can be precisely cut along the M-plane closest to the bevel angle or the M-plane farthest from the bevel angle in the GaN substrate 10, thereby ensuring the cutting yield.

[0083] In one example, in step S20, the method for determining the M-plane in the gallium nitride substrate as described in the above embodiment can be used to determine the M-plane closest to the bevel angle in the gallium nitride substrate 10 and the M-plane farthest from the bevel angle in the gallium nitride substrate 10. For details, see Figures 1 to 4 The description of the related embodiments will not be repeated here.

[0084] In step S21 , the gallium nitride substrate 10 may be cut using any existing gallium nitride substrate cutting method, such as wire cutting or laser cutting, etc. The specific cutting process is not limited here.

[0085] In the description of this specification, reference to the terms "one embodiment" or "another embodiment" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0086] The technical features of the above embodiments can be combined in any manner. To simplify the description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction between the combinations of these technical features, they should be considered to be within the scope of this specification.

[0087] The above-described embodiments merely illustrate several implementations of the present invention, and while their descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent. It should be noted that a person skilled in the art would be able to make numerous variations and improvements without departing from the spirit of the present invention, all of which fall within the scope of protection of the present invention. Therefore, the scope of protection of the patent for this invention shall be determined by the appended claims.

Claims

1. A method for confirming an M-plane in a gallium nitride substrate, characterized in that: include: Providing gallium nitride substrates; selecting a scanning point on the upper surface of the gallium nitride substrate; Performing multiple rocking curve scans on a preset crystal plane of the gallium nitride substrate based on the scanning points to obtain multiple Omega curves and multiple scanning angles corresponding to peaks of the multiple Omega curves; Performing a 360° Phi scan on the W surface of the gallium nitride substrate to obtain a plurality of Phi values ​​corresponding to the M surface; Determining, based on a maximum scanning angle, a minimum scanning angle, and a plurality of Phi values, an M-plane closest to the bevel angle and an M-plane farthest from the bevel angle in the gallium nitride substrate; The rotation angle of the gallium nitride substrate in the XY plane corresponding to the maximum scanning angle is recorded as a first angle, and the rotation angle of the gallium nitride substrate in the XY plane corresponding to the minimum scanning angle is recorded as a second angle; and based on the maximum scanning angle, the minimum scanning angle, and the multiple Phi values ​​among the multiple scanning angles, determining the M plane closest to the bevel angle and the M plane farthest from the bevel angle in the gallium nitride substrate includes: Comparing the first angle with the plurality of Phi values, the M-plane corresponding to the Phi value whose absolute value of the difference between the first angle and the Phi value is less than or equal to a preset value is the M-plane on the gallium nitride substrate farthest from the bevel angle; The second angle is compared with the plurality of Phi values, and the M-plane corresponding to the Phi value whose absolute value of the difference with the second angle is less than or equal to the preset value is the M-plane closest to the bevel angle on the gallium nitride substrate.

2. The method for confirming the M-plane in the gallium nitride substrate according to claim 1, characterized in that: The step of performing multiple rocking curve scans on a preset crystal plane of the gallium nitride substrate based on the scanning points to obtain multiple Omega curves and multiple scanning angles corresponding to peaks of the multiple Omega curves includes: Performing a rocking curve scan of the preset crystal plane on the gallium nitride substrate based on the scanning point to obtain an Omega curve of this step, and recording a scanning angle corresponding to a peak value of the Omega curve obtained in this step; Rotating the gallium nitride substrate by a preset angle in the XY plane, performing a rocking curve scan of the preset crystal plane on the scanning point again to obtain an Omega curve of this step, and recording the scanning angle corresponding to the peak of the Omega curve obtained in this step; Repeat the previous step several times until the gallium nitride substrate is rotated 360° in the XY plane, so as to obtain a plurality of Omega curves and a plurality of scanning angles corresponding to the peaks of the plurality of Omega curves.

3. The method for confirming the M-plane in the gallium nitride substrate according to claim 2, characterized in that: Before performing rocking curve scanning of the preset crystal plane on the gallium nitride substrate based on the scanning points, the method includes: Select any point in the XY plane as the scanning starting angle point.

4. The method for confirming the M-plane in a gallium nitride substrate according to claim 2, wherein: The preset crystal plane is the (002) plane.

5. The method for confirming the M-plane in the gallium nitride substrate according to claim 2, wherein: The preset angle is 0.1°~30°.

6. The method for confirming the M-plane in a gallium nitride substrate according to claim 3, wherein: The preset angle is 1°~10°.

7. The method for confirming the M-plane in a gallium nitride substrate according to claim 1, wherein: The W-plane of the gallium nitride substrate is a plane parallel to an intersection line of the M-plane of the gallium nitride substrate and the C-plane of the gallium nitride substrate.

8. The method for confirming the M-plane in the gallium nitride substrate according to claim 7, characterized in that: The W surface of the gallium nitride substrate is a (114) surface or a (102) surface.

9. The method for confirming the M-plane in a gallium nitride substrate according to claim 1, wherein: The preset value is less than or equal to 31°.

10. A method for cutting a gallium nitride substrate, characterized in that: include: Determine the M-plane closest to the bevel angle and the M-plane farthest from the bevel angle in the gallium nitride substrate using the method for confirming the M-plane in the gallium nitride substrate according to any one of claims 1 to 9; The gallium nitride substrate is cut from an M-plane of the gallium nitride substrate that is closest to the bevel angle or from an M-plane of the gallium nitride substrate that is farthest from the bevel angle.

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