Cleaning Method, Device and System for Supply Channels Used in Wafer Processing

Abstract

The present invention discloses a method, device and system for cleaning a supply channel for wafer processing. The method includes: a first cleaning step of introducing a chemical liquid into the supply channel in a dripping manner after the supply channel is filled with the chemical liquid to achieve dynamic soaking of the supply channel, thereby dissolving contaminants; a second cleaning step of introducing a cleaning liquid into the supply channel for rinsing after the first cleaning step is performed for a period of time; and repeating the first cleaning step and the second cleaning step according to actual requirements.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor wafer processing, and in particular to a supply channel cleaning method, device and system for wafer processing. Background Art

[0002] In the preparation of very large scale integrated circuits (GLSI), chemical mechanical planarization (CMP) is currently the only technology that can achieve local and global planarization of the wafer surface. After the CMP operation, a large amount of contaminants such as abrasive particles and wafer debris will remain on the wafer surface. As the feature size continues to decrease, the requirements for the size and quantity of residual contaminants are becoming more and more stringent. The wafer processing process after CMP is an important step to remove these contaminants, and it is becoming a key process that determines the reliability of the device.

[0003] like Figure 1 As shown, the patent document with application number 201310023763.3 discloses a device for wafer processing, which includes a first and a second cleaning liquid supply unit, each of which includes: a cleaning liquid delivery pipe, the cleaning liquid delivery pipe is arranged on the frame; and a plurality of nozzles, the plurality of nozzles are evenly spaced and arranged on the cleaning liquid delivery pipe for supplying cleaning liquid to the surface of the wafer. In the case where such a processing device is set up in a chip factory, etc., before the processing device is normally operated, particles (dust) and other pollutants existing inside the pipeline and the nozzle must be removed. In addition, attachments attached to the pipeline and the like due to the use of the processing device must also be removed at an appropriate time. Therefore, it is necessary to clean the pipelines and the like of the processing device, improve the cleanliness of key parts such as the pipelines and flow meters in the liquid circuit box, and reduce the influence of the cleaning unit itself, which is also an important way to ensure the stability of the cleaning effect and batch consistency.

[0004] In the prior art, flushing the pipeline requires a large amount of liquid medicine, and the cleaning time is long, even up to six days, which will cause a lot of waste and increase production costs. Therefore, controlling the time and cost of cleaning is an urgent problem to be solved. Summary of the invention

[0005] Embodiments of the present invention provide a supply channel cleaning method, device and system for wafer processing, aiming to solve at least one of the technical problems existing in the prior art.

[0006] A first aspect of an embodiment of the present invention provides a method for cleaning a supply channel for wafer processing, comprising:

[0007] The first cleaning step: after the supply channel is filled with chemical liquid, the chemical liquid is introduced into the supply channel in a dripping manner to achieve dynamic soaking of the supply channel, thereby dissolving pollutants;

[0008] The second cleaning step: after the first cleaning step is performed for a period of time, cleaning liquid is introduced into the supply channel for rinsing;

[0009] Repeat the first cleaning step and the second cleaning step according to actual needs.

[0010] In one embodiment, for the cleaning of a single-channel, it includes:

[0011] The pre-rinsing step: quickly rinsing the single-channel with high-pressure cleaning liquid; and,

[0012] The first cleaning step and the second cleaning step as described in claim 1.

[0013] In one embodiment, for the cleaning of a complex channel with multiple branches, according to the complexity of the channel, adjust the dripping frequency of the chemical liquid and / or the dynamic soaking time in the first cleaning step, and adjust the flow rate of the cleaning liquid and / or the rinsing time in the second cleaning step.

[0014] In one embodiment, the cleaning method has at least two different mode selection functions, specifically including:

[0015] According to the operation instruction, retrieve the corresponding cleaning mode from at least two preset cleaning modes and execute the cleaning steps; wherein, the cleaning modes include cleaning steps set according to the complexity of the supply channel.

[0016] In one embodiment, the chemical liquid is SC1 chemical liquid, the dripping frequency of the chemical liquid is 50 - 130 drops per minute, and the dynamic soaking time of the chemical liquid is 1 - 10 hours.

[0017] In one embodiment, the cleaning liquid is DIW deionized water, the flow rate is 0.4 - 0.6 MPa, and the rinsing time is 6 - 14 hours.

[0018] In one embodiment, the material of the supply channel is plastic or stainless steel.

[0019] In one embodiment, the cleaning method further includes a detection step, performing particle detection on the supply channel, and if the detection result is unqualified, re-execute the first cleaning step and / or the second cleaning step.

[0020] In one embodiment, the cleaning method further includes a drying step. After the particle detection result of the supply channel is qualified, the supply channel is purged with high-purity nitrogen PN2 for drying, and then the supply channel is blocked.

[0021] The second aspect of the embodiments of the present invention provides a cleaning device for a supply channel used in wafer processing, including:

[0022] A liquid supply module for providing the chemical liquid and the cleaning liquid;

[0023] A flow rate adjustment module for adjusting the flow rates of the chemical liquid and the cleaning liquid by using valves;

[0024] A control module for implementing the supply channel cleaning method as described above.

[0025] In one embodiment, the control module includes a mode selection unit for receiving an operation instruction from a user and sending the corresponding cleaning mode information selected by the user to the control module.

[0026] The third aspect of the embodiments of the present invention provides a wafer processing system, including:

[0027] Multiple processing units;

[0028] A supply channel connected to the processing unit for supplying a cleaning fluid to the processing unit; wherein, the supply channel is connected to the cleaning device as described above for cleaning.

[0029] The beneficial effects of the embodiments of the present invention include: The chemical liquid is introduced into the supply channel in a dripping manner to dynamically soak the supply channel to dissolve pollutants, so as to achieve a better cleaning effect in a short time and with less flow consumption. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Through the detailed description in conjunction with the following drawings, the advantages of the present invention will become clearer and easier to understand, but these drawings are only schematic and do not limit the protection scope of the present invention, wherein:

[0031] Figure 1 Shows a device applied to wafer processing in the prior art;

[0032] Figure 2 Shows a wafer processing system provided by an embodiment of the present invention;

[0033] Figure 3 Shows a wafer processing system provided by an embodiment of the present invention;

[0034] Figure 4 Shows a cleaning method provided by an embodiment of the present invention;

[0035] Figure 5 shows a complex channel provided by an embodiment of the present invention. Detailed implementation manners

[0036] The technical solution of the present invention will be described in detail below in conjunction with specific embodiments and their accompanying drawings. The embodiments recorded herein are specific specific implementation manners of the present invention and are used to illustrate the concept of the present invention; these descriptions are all explanatory and exemplary and should not be construed as limiting the implementation manners of the present invention and the protection scope of the present invention. It should be noted that, without conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. Except for the embodiments recorded herein, those skilled in the art can also adopt other obvious technical solutions based on the content disclosed in the claims and the specification of the present application. These technical solutions include technical solutions that make any obvious substitutions and modifications to the embodiments recorded herein. It should be understood that, unless otherwise specifically stated, for the convenience of understanding, the following descriptions of the specific implementation manners of the present invention are all based on the natural state in which the relevant devices, apparatuses, components, etc. are in their original static state without being given external control signals and driving forces.

[0037] In addition, it should also be noted that the orientation terms such as front, back, up, down, left, right, top, bottom, front, back, horizontal, vertical, etc. used in the present application are only for the convenience of description and to help understand the relative position or direction, and are not intended to limit the orientation of any device or structure.

[0038] To illustrate the technical solution of the present invention, the following will be described with reference to the drawings and in conjunction with embodiments.

[0039] In the present application, Chemical Mechanical Polishing is also known as Chemical Mechanical Planarization, and wafer is also known as chip, silicon wafer, substrate or base plate, and their meanings and actual functions are equivalent.

[0040] Such as Figure 2As shown in the figure, a wafer processing system 100 provided by an embodiment of the present invention includes a front-end module 110, a transfer module 120, and a processing module 130. Among them, the processing module 130 includes two groups of chemical mechanical polishing units 131 and multiple processing units. The multiple processing units include a first cleaning unit 132, a second cleaning unit 133, a third cleaning unit 134, and a drying unit 135. The cleaning units 132-134 can implement wafer cleaning in various ways such as immersion, megasonic, brushing, and / or spraying. The drying unit 135 can implement wafer drying in various ways such as rotation and / or lifting. It can be understood that the number of processing units can also be other numbers and is not limited to Figure 2 shown in the figure.

[0041] As Figure 3 shown in the figure, another embodiment of the present invention provides a wafer processing system 200, including:

[0042] Multiple processing units 132-135;

[0043] A supply channel 14, connected to the processing unit, for supplying a cleaning fluid to the processing unit.

[0044] In one embodiment, the supply channel 14 may include fluid pipelines connected to the outside of the processing units 132-135, and may also include spray bars, nozzles, and / or connecting pipes for circulating fluids located inside the processing units 132-135. The material of the supply channel 14 is PFA plastic or stainless steel.

[0045] As Figure 3 shown in the figure, another embodiment of the present invention provides a cleaning device 10 for a supply channel 14 used for wafer processing, including:

[0046] A liquid supply module 11, for providing the chemical liquid and the cleaning liquid;

[0047] A flow rate adjustment module 12, using a valve to adjust the flow rate of the chemical liquid and the cleaning liquid;

[0048] A control module 13, for controlling the operation modes of each module to implement the cleaning of the supply channel 14, which can be a host computer.

[0049] Among them, the cleaning device 10 is connected to the supply channel 14 to clean the supply channel 14. Connect the total liquid inlet end of the supply channel 14 to be cleaned to the cleaning device 10, and connect the liquid discharge end of the supply channel 14 to the corresponding liquid discharge pipeline.

[0050] As Figure 3As shown in the figure, it is the pipeline structure of the cleaning solution provided by an embodiment of the present invention. Among them, the cleaning solution is DIW deionized water; MV1, MV2, MV3 and MV4 are manual regulating valves; E2 is a DIW filter, which further filters the DIW deionized water entering the channel or module to be cleaned. The chemical solution is SC1 chemical solution, which is a mixed solution of ammonia water and hydrogen peroxide with a certain concentration ratio. The SC1 filter filters the chemical solution. Compressed air provides power for the liquid supply air pump P1 of the chemical solution. The total liquid inlet end of the pipeline is connected to the channel or module that needs to be cleaned to realize the alternating supply of the chemical solution and the cleaning solution.

[0051] Referring to Figure 3 , the specific working process includes:

[0052] 1) Open valves MV1 and MV3 to mix DIW deionized water and SC1 chemical solution.

[0053] 2) After the chemical solution is mixed, close valves MV1 and MV3, keep MV2 in the normally open state, open the valve of the liquid supply air pump P1 of the chemical solution, and supply the chemical solution into the supply channel 14 that needs to be cleaned.

[0054] 3) After the chemical solution is introduced for a certain period of time, close the valve of the liquid supply air pump P1 of the chemical solution and valve MV2, open valves MV1 and MV3, and continue to flush the supply channel 14 that needs to be cleaned with DIW deionized water.

[0055] 4) After flushing with DIW deionized water for a certain period of time, perform particle detection on the supply channel 14 that needs to be cleaned. If the detection result is qualified, purge the supply channel 14 with high-purity nitrogen; if the detection result is unqualified, the alternating cleaning process of the chemical solution and DIW deionized water needs to be repeated.

[0056] As Figure 4 shown, a cleaning method for a supply channel 14 for wafer processing provided by another embodiment of the present invention includes:

[0057] (1) After starting, enter the mode selection step, receive the operation instruction of the user, and according to the operation instruction, retrieve the corresponding cleaning mode from at least two preset cleaning modes.

[0058] (2) Execute the pre-flushing step according to the selected cleaning mode, and quickly flush the supply channel 14 with a high-pressure cleaning solution.

[0059] (3) After the pre-flushing step is completed, execute the first cleaning step, or execute the first cleaning step according to the selected cleaning mode. After the supply channel 14 is filled with the chemical solution, the chemical solution is introduced into the supply channel 14 in a dripping manner to realize the dynamic soaking of the supply channel 14, so as to dissolve the pollutants.

[0060] After the first cleaning step is completed, the second cleaning step is performed, and a cleaning liquid is introduced into the supply passage 14 for flushing.

[0061] (5) Repeat the first cleaning step and the second cleaning step n times according to the selected cleaning mode.

[0062] (6) After repeating n times, a detection step is performed to perform particle detection on the supply passage 14. If the detection result is unqualified, the first cleaning step and / or the second cleaning step are performed again; if the detection result is qualified, the cleaning of the supply passage 14 is ended.

[0063] (7) When only the evacuation step is performed according to the selected cleaning mode, the liquid in the supply passage 14 is evacuated.

[0064] The following describes Figure 4 multiple embodiments of the cleaning method shown.

[0065] Embodiment 1

[0066] For the cleaning of a single-channel, it specifically includes:

[0067] (1) Pre-flushing step, quickly flushing the single-channel with high-pressure water.

[0068] (2) First cleaning step, supply a liquid to the single-channel through the liquid supply module 11 to fill the single-channel with an SC1 solution. This SC1 solution is a mixed solution of hydrogen peroxide: ammonia water: DIW deionized water with a mixing ratio of 1:1:20. Before supplying the liquid, the terminal valve of the single-channel needs to be closed; after the single-channel is filled with the SC1 solution, open the terminal valve, and the control module 13 drops the SC1 solution into the single-channel at a set dropping frequency, such as 110 - 130 drops per minute, to achieve dynamic soaking of the single-channel. This soaking process can last for 1 - 4 hours to dissolve pollutants.

[0069] (3) Second cleaning step, after the first cleaning step is completed, introduce DIW deionized water with a hydraulic pressure of 0.4 MPa into the single-channel to flush the channel for 6 hours.

[0070] (4) Detection step, perform particle detection on the single-channel. If the detection result is unqualified, perform the above first cleaning step and / or second cleaning step again.

[0071] (5) Drying step, after the particle detection result of the single-channel is qualified, use PN2 high-purity nitrogen to purge the single-channel for drying, and then block the pipeline.

[0072] Among them, the parameters for the single-channel cleaning specifically include:

[0073] Pipeline material: PFA plastic.

[0074] Pipeline length: between 100 mm and 7000 mm.

[0075] Pipe diameter: 1 / 4 inch, 3 / 8 inch, 1 / 2 inch or 3 / 4 inch, determined by the size of the device interface used.

[0076] Pipeline complexity: between 0 and 5; it should be noted that the pipeline complexity mentioned here refers to the number of bends in the pipeline under different pipe diameters. For example, when two devices need to be connected by a pipeline and the path is involved, bending is necessary, and the number of bends may be more or less.

[0077] Pipeline bending angle: 90 degrees to 135 degrees.

[0078] Operating workshop ambient temperature: 20°C to 30°C, preferably 22°C to 25°C.

[0079] Operating workshop ambient humidity: 30%RH to 70%RH, preferably 45%RH to 55%RH.

[0080] The following is an example to introduce based on Figure 5 Examples of specific cleaning processes for different numbers of bends in the supply channel pipeline shown.

[0081] Such as Figure 5 Shown, for the cleaning of complex channels with a relatively large number of pipeline bends (>5), a pipeline schematic diagram of a supply channel 14 for wafer processing provided by another embodiment of the present invention, including pipeline supply channels with various different numbers of bends.

[0082] Example 2

[0083] For the cleaning of complex channels with the number of pipeline bends (between 6 and 10), taking Figure 5 the chemical liquid 1 channel that provides cleaning fluid for the wafer processing unit 134A in Figure 5 as an example, the actual number of bends in the chemical liquid 1 channel in

[0084] is 8. The cleaning process specifically includes: (1) The first cleaning step: Supply the liquid to the chemical liquid 1 channel through the liquid supply module to fill the chemical liquid 1 channel with SC1 solution. This SC1 solution is a mixed solution of hydrogen peroxide: ammonia water: DIW deionized water with a mixing ratio of 1:1:20. The terminal valve of the chemical liquid 1 channel needs to be closed before liquid supply; after the chemical liquid 1 channel is filled with SC1 solution, open the terminal valve, and the control module drops the SC1 solution into the chemical liquid 1 channel at a set dripping frequency, such as 80 - 100 drops / minute, to achieve dynamic soaking of the chemical liquid 1 channel. This soaking process can last for 5 - 8 hours to dissolve pollutants.

[0085] (2) Second cleaning step: After the first cleaning step is completed, DIW deionized water with a hydraulic pressure of 0.5 MPa is introduced into the chemical liquid 1 channel to rinse the channel for 12 hours.

[0086] (3) For complex pipelines with the number of bends (between 6 and 10), the first cleaning step and the second cleaning step need to be repeated n times (1 < n < 4).

[0087] (4) Detection step: The chemical liquid 1 channel is subjected to particle detection. If the detection result is unqualified, the first cleaning step and the second cleaning step need to be repeated n times (1 < n < 4).

[0088] (5) Drying step: After the particle detection result of the chemical liquid 1 channel is qualified, the chemical liquid 1 channel is purged with PN2 high-purity nitrogen for drying, and then the pipeline is blocked.

[0089] Among them, the parameters for cleaning complex channels with the number of pipeline bends (between 6 and 10) specifically include:

[0090] Pipeline material: PFA plastic.

[0091] Pipeline length: between 7000 mm and 20000 mm.

[0092] Pipe diameter: 1 / 4 inch, 3 / 8 inch, 1 / 2 inch or 3 / 4 inch, determined by the size of the device interface used.

[0093] Pipeline bend angle: 90 degrees to 135 degrees.

[0094] Operating workshop ambient temperature: 20°C to 30°C, preferably 22°C to 25°C.

[0095] Operating workshop ambient humidity: 30%RH to 70%RH, preferably 45%RH to 55%RH.

[0096] Example 3

[0097] For the cleaning of complex channels with the number of pipeline bends (between 11 and 15), taking Figure 5 the facility water channel that provides cleaning fluid for the wafer processing unit 134A in Figure 5 as an example, the actual number of bends in the facility water channel in

[0098] (1) The first cleaning step: Supply liquid to the facility water channel through the liquid supply module to fill the facility water channel with SC1 solution. The SC1 solution is a mixed solution of hydrogen peroxide: ammonia water: DIW deionized water with a mixing ratio of 1:1:20. Before liquid supply, the terminal valve of the facility water channel needs to be closed. After the facility water channel is filled with SC1 solution, open the terminal valve, and the control module drops the SC1 solution into the facility water channel at a set dripping frequency, such as 50 - 70 drops per minute, to achieve dynamic soaking of the facility water channel. This soaking process can last for 7 - 10 hours to dissolve pollutants.

[0099] (2) The second cleaning step: After the first cleaning step is completed, introduce DIW deionized water with a hydraulic pressure of 0.6 MPa into the facility water channel to rinse the channel for 14 hours.

[0100] (3) For complex pipelines with the number of bends (between 11 and 15), the first cleaning step and the second cleaning step need to be repeated n times (2 < n < 5).

[0101] (4) Detection step: Conduct particle detection on the facility water channel. If the detection result is unqualified, continue to repeat the first cleaning step and the second cleaning step n times (2 < n < 5).

[0102] (5) Drying step: After the particle detection result of the facility water channel is qualified, use PN2 high-purity nitrogen to purge the facility water channel for drying, and then block the pipeline.

[0103] Among them, the parameters for cleaning complex channels with the number of pipeline bends (between 11 and 15) specifically include:

[0104] Pipeline material: PFA plastic.

[0105] Pipeline length: between 20000 mm and 50000 mm.

[0106] Pipe diameter: 1 / 4 inch, 3 / 8 inch, 1 / 2 inch, or 3 / 4 inch, determined by the size of the device interface used.

[0107] Pipeline bend angle: 90 degrees - 135 degrees.

[0108] Operating workshop ambient temperature: 20°C - 30°C, preferably 22°C - 25°C.

[0109] Operating workshop ambient humidity: 30%RH - 70%RH, preferably 45%RH - 55%RH.

[0110] Further, according to the complexity of the supply channel, the dropping frequency of the chemical liquid and / or the time of dynamic soaking in the first cleaning step, as well as the flow rate of the cleaning liquid and / or the time of rinsing in the second cleaning step, can be further optimized.

[0111] In the above-mentioned Embodiments 1 to 3, on the premise of a certain supply pressure, the flow rate of the chemical liquid or DIW deionized water in a complex pipeline with a longer length or more bends is slower, and there are more pollutants remaining inside the complex pipeline. The pipeline cleaning is difficult, and a larger amount of chemical liquid is required for cleaning, and the time is longer; while the flow rate of the chemical liquid or DIW deionized water in a simple pipeline with a shorter length or fewer bends is faster, the pipeline cleaning is less difficult, and the required time is shorter. Therefore, according to the complexity of the pipeline to be cleaned or the internal pipeline of the module, the cleaning efficiency is improved mainly by controlling the module to adjust the dropping frequency of the chemical liquid into the supply channel: for a complex pipeline with a longer length or more bends, the dropping frequency of the chemical liquid is appropriately reduced, which is beneficial to the dissolution of pollutants inside the complex pipeline; for a simple pipeline with a shorter length or fewer bends, the dropping frequency of the chemical liquid is appropriately increased, and on the premise of ensuring that the pollutants can be dissolved, some of the dissolved products are carried away.

[0112] Embodiment 4

[0113] Further, the cleaning method has at least two different mode selection functions, specifically including:

[0114] According to the operation instruction, the corresponding cleaning mode is retrieved from at least two preset cleaning modes; wherein, the cleaning mode is a cleaning step set according to the complexity of the supply channel.

[0115] Based on the mode selection function described in Embodiment 4, Figure 3 the control module in further includes a mode selection unit, which is used to receive the operation instruction of the user and send the corresponding cleaning mode information selected by the user to the control module.

[0116] Specifically, the cleaning mode can include:

[0117] Strong cleaning mode, performing cleaning according to the process steps of Embodiment 2 or Embodiment 3 above;

[0118] Fast cleaning module, performing cleaning according to the process steps of Embodiment 1 above;

[0119] Single emptying mode, emptying the liquid in the channel and performing the above drying step.

[0120] Embodiment 5

[0121] Further, the cleaning method further includes a detection step, performing particle detection on the supply channel 14, and if the detection result is unqualified, re-performing the first cleaning step and / or the second cleaning step.

[0122] Table 1 and Table 2 below compare the detection results before cleaning and the cleaning results after adopting the solution of the present application. The specific parameter is the number of particles with different particle sizes in the supply channel 14, as shown below.

[0123] Table 1 Number of Particles with Different Sizes in Each Pipeline Before Cleaning

[0124] <![CDATA 管路 颗粒尺寸 > 0.1 μm 0.2 μm 0.5 μm 1 μm Pipeline 1 121 0 0 0 Pipeline 2 128 0 0 0 Pipeline 3 308 0 0 0

[0125] Table 2 Number of Particles with Different Sizes in Each Pipeline After Cleaning

[0126] <![CDATA 管路 颗粒尺寸 > 0.1 μm 0.2 μm 0.5 μm 1 μm Pipeline 1 5 0 0 0 Pipeline 2 6 0 0 0 Pipeline 3 6 0 0 0

[0127] In summary, the embodiments of the present invention can achieve efficient cleaning of the supply channel, with low safety risks during the cleaning process, a very high cleanliness of the channel after cleaning, and can meet the requirements of complex process wafer processing.

[0128] The drawings in this specification are schematic diagrams to assist in explaining the concept of the present invention, schematically showing the shapes of various parts and their mutual relationships. It should be understood that in order to clearly show the structures of the components in the embodiments of the present invention, the drawings are not drawn according to the same scale, and the same reference numerals are used to represent the same parts in the drawings.

[0129] In the description of this specification, the description referring to terms such as "one embodiment", "some embodiments", "schematic embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0130] Although the embodiments of the present invention have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and purposes of the present invention. The scope of the present invention is defined by the claims and their equivalents.

Claims

1. A cleaning method for a supply channel used in wafer processing, characterized in that, it includes: A first cleaning step, after the supply channel is filled with chemical liquid, the chemical liquid is introduced into the supply channel in a dripping manner to achieve dynamic soaking of the supply channel, thereby dissolving contaminants; A second cleaning step, after the first cleaning step is performed for a period of time, a cleaning liquid is introduced into the supply channel for rinsing; Repeat the first cleaning step and the second cleaning step according to actual needs; The chemical liquid is SC1 chemical liquid, the dripping frequency of the chemical liquid is 50 - 130 drops / minute, and the time for dynamic soaking of the chemical liquid is 1 - 10 hours; The cleaning liquid is DIW deionized water, the flow rate is 0.4 - 0.6 MPa, and the rinsing time is 6 - 14 hours; The material of the supply channel is plastic.

2. The cleaning method according to claim 1, characterized in that, for the cleaning of a single-channel, it includes: A pre-rinsing step, using a high-pressure cleaning liquid to quickly rinse the single-channel; and, The first cleaning step and the second cleaning step according to claim 1.

3. The cleaning method according to claim 1, characterized in that, for the cleaning of a complex channel with multiple branches, according to the complexity of the channel, adjust the dripping frequency and / or the time of dynamic soaking of the chemical liquid in the first cleaning step, and adjust the flow rate and / or the rinsing time of the cleaning liquid in the second cleaning step.

4. The cleaning method according to claim 1, characterized in that, it has at least two different mode selection functions, specifically including: According to an operation instruction, retrieve the corresponding cleaning mode from at least two preset cleaning modes and execute the cleaning steps; wherein, the cleaning mode includes cleaning steps set according to the complexity of the supply channel.

5. The cleaning method according to claim 1, characterized in that, it further includes a detection step, performing particle detection on the supply channel, if the detection result is unqualified, then re-execute the first cleaning step and / or the second cleaning step.

6. The cleaning method according to claim 5, characterized in that, it further includes a drying step, when the particle detection result of the supply channel is qualified, use PN2 high-purity nitrogen to purge the supply channel for drying, and then block the supply channel.

7. A cleaning device for a supply channel used in wafer processing, characterized in that, it includes: A liquid supply module, used to provide the chemical liquid and the cleaning liquid; A flow rate adjustment module, using a valve to adjust the flow rates of the chemical liquid and the cleaning liquid; A control module, used to implement the supply channel cleaning method according to any one of claims 1 to 6.

8. The cleaning device according to claim 7, characterized in that, the control module includes a mode selection unit, used to receive the user's operation instruction and send the corresponding cleaning mode information selected by the user to the control module.

9. A wafer processing system, characterized in that, it includes: Multiple processing units; A supply channel, connected to the processing unit, for supplying a cleaning fluid to the processing unit; wherein the supply channel is connected to the cleaning device as claimed in claim 7 or 8 for cleaning.

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