Radiation detectors and radiation detection equipment

Abstract

The present application discloses a ray detector and a ray detection device, wherein the ray detector comprises a first circuit layer, a first electrode layer, a photoelectric conversion layer and a second electrode layer which are stacked; the first circuit layer comprises a data line, a gate line, a first switch element and a constant voltage output unit, the first switch element corresponds to the photoelectric conversion device one by one, and the first electrode of the first switch element is electrically connected to the voltage output end of the constant voltage output unit and the output electrode of the photoelectric conversion device, the second electrode of the first switch element is electrically connected to the data line, and the control electrode of the first switch element is electrically connected to the gate line; the constant voltage output unit is used to input a preset constant voltage to the output electrode of the photoelectric conversion device through the voltage output end before or after the photoelectric conversion device senses the ray. This solution can improve the detection accuracy of the ray detector.

Description

Technical Field

[0001] The present invention generally relates to the technical field of ray detection, and in particular to a ray detector and ray detection equipment. Background Art

[0002] Compared with CR (Computed Radiography), DR (Digital Radiography) does not require film and film machine, and can directly display the image on the monitor. Therefore, it has significant advantages such as fast imaging speed, convenient operation and high imaging resolution. The technical core of DR is the radiation detector (such as X-ray detector). How to improve the detection accuracy of the radiation detector plays a decisive role in the imaging quality. Summary of the invention

[0003] The present application hopes to provide a radiation detector and a radiation detection device to improve detection accuracy.

[0004] In a first aspect, the present invention provides a radiation detector, comprising a first circuit layer, a first electrode layer, a photoelectric conversion layer and a second electrode layer which are stacked;

[0005] The photoelectric conversion layer includes a plurality of photoelectric conversion devices arranged in an array, the output electrodes of the photoelectric conversion devices are electrically connected to the first electrode layer, and the input electrodes of the photoelectric conversion devices are electrically connected to the second electrode layer;

[0006] The first circuit layer includes a data line, a gate line, a first switch element and a constant voltage output unit, the first switch element corresponds to the photoelectric conversion device one by one, and a first electrode of the first switch element is electrically connected to a voltage output end of the constant voltage output unit and an output electrode of the photoelectric conversion device, a second electrode of the first switch element is electrically connected to the data line, and a control electrode of the first switch element is electrically connected to the gate line;

[0007] The constant voltage output unit is used to input a preset constant voltage to the output electrode of the photoelectric conversion device through the voltage output end before or after the photoelectric conversion device senses radiation.

[0008] As an implementable manner, the constant voltage output unit includes a capacitor, a first pole of the capacitor is the voltage output end, and a second pole of the capacitor is used to connect to a constant voltage source.

[0009] As an implementable manner, a reset unit is further included, wherein a reset end of the reset unit is connected to the data line, and is used to reset the data line after the sensing signal of the photoelectric conversion device is read via the data line.

[0010] As an implementable manner, the reset unit includes a second switching element, a first pole of the second switching element is connected to the data line, a second pole of the second switching element is connected to a reset signal, a control pole of the second switching element is connected to a reset control signal, and a first pole of the second switching element is the reset end.

[0011] As an implementable manner, a radiation shielding layer is provided between the first circuit layer and the first electrode layer.

[0012] As an implementable manner, the first electrode layer includes a first electrode pattern and a first light-transmitting area surrounded by the first electrode pattern, the photoelectric conversion layer also includes a second light-transmitting area between adjacent photoelectric conversion devices, and the second electrode layer includes a second electrode pattern and a third light-transmitting area surrounded by the second electrode pattern;

[0013] In the orthographic projection of the radiation detector, the first light-transmitting area, the second light-transmitting area and the third light-transmitting area at least partially overlap.

[0014] In a second aspect, the present invention provides a radiation detection device, comprising the above-mentioned radiation detector, and also comprising a radiation light source and a display unit;

[0015] The light emitting surface of the ray light source faces the light receiving surface of the ray detector;

[0016] The display unit is used to display the detection image obtained by each photoelectric conversion device of the radiation detector in response to the radiation dose.

[0017] As an implementable manner, the display unit includes a display panel, and the display panel is arranged on a side of the radiation detector away from the light receiving surface.

[0018] As an implementable manner, the display panel includes a second circuit layer, a third electrode layer, a pixel layer and a fourth electrode layer which are stacked;

[0019] The second circuit layer is arranged on the same layer as the first circuit layer, the first circuit layer includes a first circuit pattern area, the second circuit layer includes a second circuit pattern area, the first circuit pattern area and the second circuit pattern area are alternately arranged, the first circuit pattern area corresponds one-to-one to the photoelectric conversion device, the second circuit pattern area corresponds one-to-one to the pixels of the pixel layer, and the number of the second circuit pattern areas is greater than or equal to the number of the first circuit pattern areas.

[0020] As an implementable manner, the display unit includes a second circuit layer, a third electrode layer, a pixel layer and a fourth electrode layer which are stacked;

[0021] The second circuit layer is arranged in the same layer as the first circuit layer, the first circuit layer includes a first circuit pattern area, the second circuit layer includes a second circuit pattern area, the first circuit pattern area and the second circuit pattern area are arranged alternately, the first circuit pattern area corresponds to the photoelectric conversion device one by one, the second circuit pattern area corresponds to the pixels of the pixel layer one by one, and the number of the second circuit pattern areas is greater than or equal to the number of the first circuit pattern areas;

[0022] The first electrode layer and the third electrode layer are arranged in the same layer, the first electrode layer includes a first electrode pattern area, the third electrode layer includes a third electrode pattern area, and the first electrode pattern area and the second electrode pattern area are alternately arranged;

[0023] The second electrode layer and the fourth electrode layer are an integrated structure;

[0024] A layer of the second circuit layer away from the third electrode layer is provided with a radiation shielding layer, and the radiation shielding layer includes a shielding pattern and a radiation transmission area between the shielding patterns;

[0025] In the orthographic projection of the radiation detection device, the second circuit pattern area is directly opposite to the shielding pattern, and the second circuit pattern area is located within the shielding pattern, and the photoelectric conversion device is directly opposite to the radiation transmission area.

[0026] As an implementable manner, the display panel includes a pixel layer, the pixel layer includes a plurality of pixels arranged at intervals and a ray transmission area between adjacent pixels;

[0027] In the orthographic projection of the radiation detection device, the photoelectric conversion device is located in the radiation transmission area.

[0028] The above scheme sets a constant voltage output unit, and inputs a preset constant voltage to the output electrode of the photoelectric conversion device through the constant voltage output unit before or after the photoelectric conversion device senses the radiation, so as to maintain the voltage of the output electrode of the photoelectric conversion device constant before or after the photoelectric conversion device senses the radiation, thereby overcoming the change of the basic voltage of the output electrode caused by the previous sensing and / or other parts in the circuit. In this way, after the photoelectric conversion device senses the radiation, the voltage increment on the output electrode is the induced potential generated by the photoelectric conversion device according to the intensity of the sensed radiation, without the influence of other external voltages, thereby improving the detection accuracy of the radiation detector. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Other features, objects and advantages of the present application will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings:

[0030] Figure 1 A schematic circuit diagram of a photoelectric conversion device in a radiation detector provided in Example 1 of the present invention;

[0031] Figure 2 A circuit schematic diagram of a ray detector provided in Example 1 of the present invention;

[0032] Figure 3 A schematic diagram of the layered structure of the radiation detector provided in Example 1 of the present invention;

[0033] Figure 4 A circuit diagram of a photoelectric conversion device in a radiation detector provided in Example 2 of the present invention;

[0034] Figure 5 A schematic diagram of the layered structure of a radiation detector provided in Example 3 of the present invention;

[0035] Figure 6 A schematic diagram of the structure of a ray detection device provided in Example 4 of the present invention;

[0036] Figure 7 A schematic diagram of the structure of a ray detection device provided in Example 5 of the present invention;

[0037] Figure 8 A schematic diagram of the structure of a ray detection device provided in Example 6 of the present invention;

[0038] Fig. 9 This is a schematic diagram of the structure of the radiation detection equipment provided in Example 7 of the present invention. DETAILED DESCRIPTION

[0039] The present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the relevant invention, rather than to limit the invention. It is also necessary to explain that, for ease of description, only the parts related to the invention are shown in the accompanying drawings.

[0040] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0041] X-rays are electromagnetic waves with short wavelengths (0.01-10nm) and strong penetrating power. They are widely used in medical imaging, non-destructive testing, material research and other fields.

[0042] Perovskite materials have sensitive electrical volt-ampere characteristics to X-rays. Photoelectric conversion devices made of them can image the detected object under low-dose X-ray irradiation. Therefore, photoelectric conversion devices made of perovskite materials are gradually applied to X-ray imaging technology to sense the intensity of X-rays after passing through the detected object to obtain the detected image. Its working principle is that different materials and substances absorb different amounts of X-rays. For example, in medical imaging, since different tissues of the human body absorb different amounts of X-rays, the radiation intensity of X-rays passing through the human body to the X-ray detector is also different, and the induced potential generated by the X-ray detector is also different. According to the induced potential, the grayscale image of the internal tissue of the human body can be obtained.

[0043] However, the inventors of this case noticed that after the induced potential is read and / or the interference between circuits, the basic voltage of the output electrode of the photoelectric conversion device will change. For example, but not limited to, the theoretical state or design value of the basic voltage of the output electrode of the photoelectric conversion device is 1V. Due to the reading of the induced potential and / or the interference between circuits, the basic voltage of the output electrode of the photoelectric conversion device becomes 0.97V. If the potential generated by the X-ray received by the photoelectric conversion device is 0.35V, the voltage read from the output electrode of the photoelectric conversion device is 1.32V. Since the basic voltage has changed by 0.03V, it is no longer the theoretical state or design value of 1V. However, the ray detection equipment will still determine the induced potential as 0.32V according to the basic voltage of 1V, and image at the grayscale corresponding to 0.32V, which causes measurement errors and reduces the measurement accuracy. To solve this problem, the inventors of this case adopted the following technical solutions:

[0044] At least see Figure 1-Figure 3 As shown, an embodiment of the present invention shows a radiation detector, which is, for example but not limited to, an X-ray detector, including a first circuit layer 22, a first electrode layer 26, a photoelectric conversion layer 27, and a second electrode layer 28 that are stacked;

[0045] The photoelectric conversion layer 27 includes a plurality of photoelectric conversion devices 1 arranged in an array to form a pixel-level arrangement structure, and the number, size, and spacing of the photoelectric conversion devices 1 can be set according to the requirements of detection accuracy. The output electrode of the photoelectric conversion device 1 is electrically connected to the first electrode layer 26, and the input electrode of the photoelectric conversion device 1 is electrically connected to the second electrode layer 28; the photoelectric conversion device 1 is made of, for example but not limited to, a perovskite material.

[0046] The first circuit layer 22 includes a data line DL, a gate line GL, a first switch element T1 and a constant voltage output unit 2, wherein the first switch element T1 corresponds to the photoelectric conversion device 1 one by one, and a first electrode of the first switch element T1 is electrically connected to a voltage output end of the constant voltage output unit 2 and an output electrode of the photoelectric conversion device 1, a second electrode of the first switch element T1 is electrically connected to the data line DL, and a control electrode of the first switch element T1 is electrically connected to the gate line GL;

[0047] The data lines DL and the gate lines GL are arranged crosswise, for example, the gate lines GL extend along a first direction x, and the data lines DL extend along a second direction y, the first direction x may be a row direction, and the second direction y may be a column direction. The crosswise data lines DL and the gate lines GL define a plurality of regions, each of which has a photoelectric conversion device 1.

[0048] Each switching element in this article can be a transistor, and each transistor can be a thin film transistor or a field effect transistor or other device with the same characteristics. It can be an N-type transistor or a P-type transistor. This article takes the N-type thin film transistor as an example. In order to distinguish the two poles of the transistor except the control pole, one of the poles is called the first pole and the other pole is called the second pole. Among them, the control pole is the gate, the first pole can be the drain, and the second pole can be the source; or the control pole is the gate, the first pole can be the source, and the second pole can be the drain.

[0049] The constant voltage output unit 2 is used to input a preset constant voltage to the output electrode of the photoelectric conversion device 1 through the voltage output end before or after the photoelectric conversion device 1 senses radiation.

[0050] When performing detection, the reading IC4 can read the signal of the output electrode of the photoelectric conversion device 1, that is, the node A, row by row and column by column (which can be a voltage signal), and record the signal of the output electrode of the corresponding photoelectric conversion device 1 in the form of coordinates (the signal is used to characterize the grayscale of the detection image) to form a detection image for display.

[0051] The above scheme sets a constant voltage output unit 2, and inputs a preset constant voltage to the output electrode of the photoelectric conversion device 1 through the constant voltage output unit 2 before or after the photoelectric conversion device 1 senses the radiation, so as to maintain the voltage of the output electrode of the photoelectric conversion device 1 constant before or after the photoelectric conversion device 1 senses the radiation, thereby overcoming the change of the basic voltage of the output electrode caused by the previous sensing and / or other parts in the circuit. In this way, after the photoelectric conversion device 1 senses the radiation, the voltage increment on the output electrode is the induced potential generated by the photoelectric conversion device 1 according to the intensity of the sensed radiation, without the influence of other external voltages, thereby improving the detection accuracy of the radiation detector.

[0052] As an implementation method, see also Figure 4 As shown, the constant voltage output unit 2 includes a capacitor C, a first pole of the capacitor C is the voltage output terminal, and a second pole of the capacitor is used to connect a constant voltage source, which may be a driving IC 5. The constant voltage source is, for example but not limited to, a bias voltage Bisa.

[0053] As an implementable manner, a reset unit is further included, wherein a reset end of the reset unit is connected to the data line DL, and is used to reset the data line DL after the sensing signal of the photoelectric conversion device 1 is read through the data line DL.

[0054] As an implementable manner, the reset unit includes a second switch element T2, a first pole of the second switch element T2 is connected to the data line DL, a second pole of the second switch element T2 is connected to a reset signal, a control pole of the second switch element T2 is connected to a reset control signal, and a first pole of the second switch element T2 is the reset end.

[0055] As an implementable manner, a radiation shielding layer 24 is provided between the first circuit layer 22 and the first electrode layer 26 to prevent X-rays from irradiating corresponding switch elements and causing influence. The material of the radiation shielding layer 24 is, for example but not limited to, lead oxide.

[0056] As an achievable method, Figure 5 As shown, the first electrode layer 26 includes a first electrode pattern and a first light-transmitting area 262 surrounded by the first electrode pattern, the photoelectric conversion layer 27 also includes a second light-transmitting area 272 between adjacent photoelectric conversion devices 1, and the second electrode layer 28 includes a second electrode pattern and a third light-transmitting area 282 surrounded by the second electrode pattern;

[0057] In the orthographic projection of the radiation detector, the first light-transmitting area 262 , the second light-transmitting area 272 and the third light-transmitting area 282 at least partially overlap.

[0058] The ray detector of the present invention is illustrated below with several specific examples.

[0059] Example 1-1

[0060] At least see Figure 1-Figure 4 As shown, the radiation detector is an X-ray detector, comprising a stacked substrate 21, a first circuit layer 22, a first planarization layer 23, a radiation shielding layer 24, a second planarization layer 25, a first electrode layer 26, a photoelectric conversion layer 27, a second electrode layer 28, a packaging layer 29 and a cover plate 30;

[0061] The substrate 21 may be a flexible substrate, such as a polyethylene terephthalate (PET) film, a PI (Polyimide) film, etc.; or a rigid substrate, such as a glass substrate, etc.

[0062] The first circuit layer 22 includes data lines DL, gate lines GL, first switch elements T1 and a constant voltage output unit 2 . The first switch elements T1 correspond to the photoelectric conversion devices 1 one by one to control the output of the signal of each photoelectric conversion device 1 .

[0063] The data lines DL and the gate lines GL are arranged crosswise, for example, the gate lines GL extend along a first direction x, and the data lines DL extend along a second direction y, the first direction x may be a row direction, and the second direction y may be a column direction. The crosswise data lines DL and the gate lines GL define a plurality of regions, each of which has a photoelectric conversion device 1.

[0064] The first switch element T1 is an N-type thin film transistor, the first electrode of the N-type thin film transistor is the source electrode, the second electrode is the drain electrode, and the control electrode is the gate electrode. The source electrode of the N-type thin film transistor is connected to the first electrode of the following capacitor, the drain electrode is connected to the data line DL, the gate electrode is connected to the gate line GL, and the gate line GL is connected to the GOA (Gate Driven on Array; array substrate gate drive) circuit or the gate drive IC (Integrated Circuit; integrated circuit) 3.

[0065] The constant voltage output unit 2 includes a capacitor, the first electrode of which is the voltage output terminal of the constant voltage output unit 2 and connected to the source of the N-type thin film transistor, and the second electrode of the capacitor is used to connect to a constant voltage source, such as but not limited to a bias voltage Bisa.

[0066] A first planarization layer 23 is formed on the first circuit layer 22 to deposit a radiation shielding layer 24. The material of the radiation shielding layer 24 is, for example but not limited to, lead oxide. The radiation shielding layer 24 is used to prevent X-rays from entering the first circuit layer 22 and causing adverse effects on the above-mentioned N-type thin film transistor.

[0067] A second planarization layer 25 is formed on the radiation shielding layer 24, and a first electrode layer 26 is formed on the second planarization layer 25. The first electrode layer 26 serves as an anode layer having a plurality of patterned contacts for one-to-one connection between the source of the N-type thin film transistor and the photoelectric conversion device 1 described below.

[0068] The photoelectric conversion layer 27 includes a plurality of photoelectric conversion devices 1 arranged in an array to form a pixel-level arrangement structure. The number, size, and spacing of the photoelectric conversion devices 1 can be set according to the requirements of the detection accuracy. The output electrode of the photoelectric conversion device 1 is electrically connected to the first electrode layer 26, and the input electrode of the photoelectric conversion device 1 is electrically connected to the second electrode layer 28; the second electrode layer 28 serves as a cathode and can be connected to the above-mentioned bias voltage. The photoelectric conversion device 1 is made of, for example, but not limited to, a perovskite material.

[0069] When the X-ray detector is detecting, the gate driver IC3 scans line by line through the gate line GL. After the photoelectric conversion device 1 receives the X-ray, it generates an induced potential, which increases the source voltage of the N-type thin film transistor. When the gate-to-source voltage V GB Greater than the threshold voltage V th When the N-type thin film transistor is turned on, the reading IC4 reads the potential output by the drain of the N-type thin film transistor through the corresponding data line DL. Each photoelectric conversion device 1 can be located according to the gate line GL and the data line DL, and the detection signal corresponding to each photoelectric conversion device 1 can be stored in the form of coordinates.

[0070] Each data line DL is also connected to a second switch element T2 as a reset unit. Specifically, a first electrode of the second switch element T2 is connected to the data line DL, a second electrode of the second switch element T2 is connected to a reset signal, which may be a voltage signal, and a control electrode of the second switch element T2 is connected to a reset control signal. After the detection is completed, a certain amount of charge will remain on the data line DL. The second switch element T2 is turned on by the reset control signal to input a reset signal to the data line DL to eliminate the residual charge on the data line DL, thereby ensuring the accuracy of the next inspection.

[0071] In addition, before or after the detection, the capacitor C is used to maintain the basic voltage of the voltage output terminal of the photoelectric conversion device 1, namely, the node B, stable, ie, equal to the preset constant voltage.

[0072] The encapsulation layer 29 may be a TFE (thin film encapsulation) layer, and the cover plate 30 may be a glass cover plate or the like.

[0073] Example 1-2

[0074] At least see Figure 5As shown, the ray detector is an X-ray detector, comprising a stacked substrate 21, a first circuit layer 22, a first electrode layer 26, a photoelectric conversion layer 27, a second electrode layer 28, and a packaging layer 29; the main difference between it and the above example 1-1 is that the substrate 21 is CPI (CleanPolyimide; clean polyimide) film; the first circuit layer 22 is a transparent circuit layer, and its circuit principle can be the same as that of the above example 1-1; the first electrode layer 26 includes a first electrode pattern and a first light-transmitting area 262 surrounded by the first electrode pattern; the photoelectric conversion layer 27 also includes a photoelectric conversion device 1, and a second light-transmitting area 272 between adjacent photoelectric conversion devices 1; the second electrode layer 28 includes a second electrode pattern and a third light-transmitting area 282 surrounded by the second electrode pattern; in the orthographic projection of the ray detector 33, the first light-transmitting area 262, the second light-transmitting area 272 and the third light-transmitting area 282 at least partially overlap, and in this example, the first light-transmitting area 262, the second light-transmitting area 272 and the third light-transmitting area 282 completely overlap, and are filled with a planarization material with high transmittance. In this example, the substrate 21, the first circuit layer 22 and each light-transmitting area can form a light path, and in the case of setting a display device later, the light path can correspond to the pixel 421 position of the display device to display through the ray detector 33.

[0075] On the second hand, see at least Figure 6 As shown, the present invention provides a radiation detection device, including the above-mentioned radiation detector 33, and also includes a radiation light source 32 and a display unit 31;

[0076] The radiation light source 32 is used to emit X-rays, for example.

[0077] The display unit 31 is, for example but not limited to, an LCD (Liquid Crystal Display) display unit 31 , an OLED (Organic Light-Emitting Diode) display unit 31 or a QLED (Quantum Dot Light Emitting Diodes) display unit 31 .

[0078] The light emitting surface 36 of the radiation source 32 faces the light receiving surface 35 of the radiation detector 33;

[0079] During detection, the object to be detected is located between the light emitting surface 36 of the radiation light source 32 and the light receiving surface 35 of the radiation detector 33. The radiation emitted by the radiation light source 32 is emitted from the light emitting surface 36, passes through the object to be detected, and then enters the light receiving surface 35 of the radiation detector 33. Each photoelectric conversion device 1 of the radiation detector 33 generates an induced voltage representing different grayscales according to the intensity of the sensed radiation (that is, the radiation dose) to obtain a detected image.

[0080] The display unit 31 is used to display the detection image obtained by each photoelectric conversion device 1 of the radiation detector 33 in response to the radiation dose.

[0081] As an implementable manner, in order to observe the acquired detection image while detecting, the display unit 31 includes a display panel, and the display panel is arranged on a side of the radiation detector 33 away from the light receiving surface 35 .

[0082] As an achievable method, Figure 7 As shown, in some implementations, in order to improve portability, reduce processing costs and improve manufacturing efficiency, the radiation detector 33 and the display unit 31 can be integrated together, that is, the radiation detector 33 and the display unit 31 can be arranged on the same layer at least partially.

[0083] Specifically: the display unit 31 includes a second circuit layer 52, a third electrode layer 41, a pixel layer 42 and a fourth electrode layer 43 which are stacked;

[0084] The second circuit layer 52 is arranged in the same layer as the first circuit layer 22, that is, the second circuit layer 52 and the first circuit layer 22 are prepared in the same layer by the same preparation process and using the same materials. The first circuit layer 22 includes a first circuit pattern area 221, and the second circuit layer 52 includes a second circuit pattern area 222. The first circuit pattern area 221 and the second circuit pattern area 222 are arranged alternately. The first circuit pattern area 221 corresponds to the photoelectric conversion device 1 one by one, and the second circuit pattern area 222 corresponds to the pixels of the pixel layer 42 one by one. The number of the second circuit pattern areas 222 is greater than or equal to the number of the first circuit pattern areas 221, so as to ensure that the sensing signal of each photoelectric conversion device 1 is displayed by at least one pixel.

[0085] Each first circuit pattern area 221 corresponds to a photoelectric conversion device 1, which is used to control the output of the detection signal of the photoelectric conversion device 1 and the resetting of the data line DL. Each first circuit pattern area 221 includes the above-mentioned gate line GL, data line DL, first switch element T1, second switch element T2 and capacitor; each second circuit pattern area 222 corresponds to a pixel 421 to control the display of the pixel 421. The second circuit pattern area 222 can be any one of the existing pixel circuits, such as but not limited to 7T1C, 6T1C, 6T2C, 5T1C, 4T1C and other pixel circuits, where T is a thin film transistor and C is a pixel capacitor.

[0086] As an achievable method, Figure 8As shown, the display unit 31 includes a second circuit layer 52, a third electrode layer 41, a pixel layer 42 and a fourth electrode layer 43 which are stacked;

[0087] The second circuit layer 52 is arranged in the same layer as the first circuit layer 22, the first circuit layer 22 includes a first circuit pattern area 221, the second circuit layer 52 includes a second circuit pattern area 222, the first circuit pattern area 221 and the second circuit pattern area 222 are alternately arranged, the first circuit pattern area 221 corresponds to the photoelectric conversion device 1 one by one, the second circuit pattern area 222 corresponds to the pixels 421 of the pixel layer 42 one by one, and the number of the second circuit pattern areas 222 is greater than or equal to the number of the first circuit pattern areas 221, so that the grayscale corresponding to the voltage induced by each photoelectric conversion device 1 is displayed by at least one pixel 421;

[0088] The first electrode layer 26 and the third electrode layer 41 are arranged in the same layer to form an anode layer 261. The first electrode layer 26 includes a first electrode pattern area 2612. The third electrode layer 41 includes a third electrode pattern area 2611. The first electrode pattern area 2612 and the second electrode pattern area 2611 are alternately arranged.

[0089] The second electrode layer 28 and the fourth electrode layer 43 are an integral structure, for example, a same surface electrode 281;

[0090] A radiation shielding layer 24 is disposed on a side of the second circuit layer 52 away from the third electrode layer 41 , and the radiation shielding layer 24 includes shielding patterns 241 and radiation transmission areas between the shielding patterns 241 ;

[0091] In the orthographic projection of the radiation detection device, the second circuit pattern area 222 is directly opposite to the shielding pattern 241, and the second circuit pattern area 222 is located in the shielding pattern 241, and the photoelectric conversion device 1 is directly opposite to the radiation transmission area. With this structure, the radiation can be irradiated to the photoelectric conversion device 1, and the radiation can be prevented from causing adverse effects on the thin film transistors arranged in the second circuit pattern area 222.

[0092] As an achievable method, Fig. 9 As shown, the display panel includes a pixel layer 42, and the pixel layer 42 includes a plurality of pixels 421 arranged at intervals and a ray transmission area 422 between adjacent pixels 421;

[0093] In the orthographic projection of the radiation detection device, the photoelectric conversion device 1 is located in the radiation transmission area 422 .

[0094] The ray detection device of the invention is illustrated below with several specific examples.

[0095] Example 2-1

[0096] At least see Figure 6 As shown, the radiation detection device includes a radiation detector 33, a radiation light source 32 and a display unit 31;

[0097] The radiation light source 32 is used to emit X-rays, for example.

[0098] The display unit 31 is, for example, an OLED display unit 31 or a QLED (Quantum Dot Light Emitting Diodes).

[0099] The light emitting surface 36 of the radiation source 32 faces the light receiving surface 35 of the radiation detector 33;

[0100] The display unit 31 is used to display the detection image obtained by each photoelectric conversion device 1 of the radiation detector 33 in response to the radiation dose.

[0101] The radiation detector 33 includes a stacked substrate 21 , a first circuit layer 22 , a first planarization layer 23 , a radiation shielding layer 24 , a second planarization layer 25 , a first electrode layer 26 , a photoelectric conversion layer 27 , a second electrode layer 28 , a packaging layer 29 and a cover plate 30 .

[0102] The substrate 21 may be a PI film.

[0103] The first circuit layer 22 includes data lines DL, gate lines GL, first switch elements T1 and a constant voltage output unit 2 . The first switch elements T1 correspond to the photoelectric conversion devices 1 one by one to control the output of the signal of each photoelectric conversion device 1 .

[0104] The data lines DL and the gate lines GL are arranged crosswise, for example, the gate lines GL extend along a first direction x, and the data lines DL extend along a second direction y, the first direction x may be a row direction, and the second direction y may be a column direction. The crosswise data lines DL and the gate lines GL define a plurality of regions, each of which has a photoelectric conversion device 1.

[0105] The first switch element T1 is an N-type thin film transistor, the first electrode of the N-type thin film transistor is the source electrode, the second electrode is the drain electrode, and the control electrode is the gate electrode. The source electrode of the N-type thin film transistor is connected to the first electrode of the following capacitor C, the drain electrode is connected to the data line DL, the gate electrode is connected to the gate line GL, and the gate line GL is connected to the GOA (Gate Driven on Array; array substrate gate drive) circuit or the gate drive IC (Integrated Circuit; integrated circuit) 3.

[0106] The constant voltage output unit 2 includes a capacitor C, a first electrode of which is a voltage output terminal of the constant voltage output unit 2 and connected to the source of the N-type thin film transistor, and a second electrode of the capacitor is used to connect to a constant voltage source, such as but not limited to a bias voltage.

[0107] A first planarization layer 23 is formed on the first circuit layer 22 to deposit a radiation shielding layer 24. The material of the radiation shielding layer 24 is, for example but not limited to, lead oxide. The radiation shielding layer 24 is used to prevent X-rays from entering the first circuit layer 22 and causing adverse effects on the above-mentioned N-type thin film transistor.

[0108] A second planarization layer 25 is formed on the radiation shielding layer 24, and a first electrode layer 26 is formed on the second planarization layer 25. The first electrode layer 26 serves as an anode layer having a plurality of patterned contacts for one-to-one connection between the source of the N-type thin film transistor and the photoelectric conversion device 1 described below.

[0109] The photoelectric conversion layer 27 includes a plurality of photoelectric conversion devices 1 arranged in an array, forming a pixel-level arrangement structure. The output electrode of the photoelectric conversion device 1 is electrically connected to the first electrode layer 26, and the input electrode of the photoelectric conversion device 1 is electrically connected to the second electrode layer 28; the second electrode layer 28 serves as a cathode and can be connected to the above-mentioned bias voltage. The photoelectric conversion device 1 is made of, for example but not limited to, a perovskite material.

[0110] Each data line DL is also connected to a second switch element T2 as a reset unit. Specifically, a first electrode of the second switch element T2 is connected to the data line DL, a second electrode of the second switch element T2 is connected to a reset signal, which may be a voltage signal, and a control electrode of the second switch element T2 is connected to a reset control signal. After the detection is completed, a certain amount of charge will remain on the data line DL. The second switch element T2 is turned on by the reset control signal to input a reset signal to the data line DL to eliminate the residual charge on the data line DL, thereby ensuring the accuracy of the next inspection.

[0111] The encapsulation layer 29 may be a TFE layer, and the cover plate 30 may be a glass cover plate 30 or the like.

[0112] Example 2-2

[0113] At least see Figure 7As shown, the main difference between this example and Example 2-1 is that the radiation detector 33 is integrated with the display unit 31, and the second circuit layer 52 of the display unit 31 is arranged on the same layer as the first circuit layer 22 of the radiation detector 33, that is, the second circuit layer 52 and the first circuit layer 22 are prepared by the same preparation process and the same material, and the same layer structure of the second circuit layer 52 and the first circuit layer 22 is called a circuit layer 220. The first circuit layer 22 includes a first circuit pattern area 221, and the second circuit layer 52 includes a second circuit pattern area 222. The first circuit pattern area 221 and the second circuit pattern area 222 are alternately arranged, the first circuit pattern area 221 corresponds to the photoelectric conversion device 1 one by one, and the second circuit pattern area 222 corresponds to the pixels 421 of the pixel layer 42 one by one, and the number of the second circuit pattern areas 222 is greater than or equal to the number of the first circuit pattern areas 221.

[0114] Specifically, the integrated structure of the radiation detector 33 and the display unit 31 includes a stacked substrate 21 (referred to herein as the first substrate), a second electrode layer 28, a photoelectric conversion layer 27, a first electrode layer 26, a first planarization layer 23, a radiation shielding layer 24, a second substrate 40, a circuit layer 220, a second planarization layer 25, a third electrode layer 41, a pixel layer 42, a fourth electrode layer 43 and an encapsulation layer 29.

[0115] The substrate 21 and the second substrate 40 can both be PI films.

[0116] The photoelectric conversion layer 27 includes a plurality of photoelectric conversion devices 1 made of a perovskite material.

[0117] The second electrode layer 28 serves as a cathode of the photoelectric conversion device 1 , and the first electrode layer 26 serves as an anode of the photoelectric conversion device 1 .

[0118] The circuit layer 220 is a common layer of the second circuit layer 52 and the first circuit layer 22, and includes a first circuit pattern area 221 and a second circuit pattern area 222. The circuit principles of the first circuit pattern area 221 and the second circuit pattern area 222 can be found in the above description and will not be repeated here.

[0119] The third electrode layer 41 serves as an anode of the pixel layer 42 , and the fourth electrode layer 43 serves as a cathode of the pixel layer 42 .

[0120] The encapsulation layer 29 is a TFE layer.

[0121] Example 2-3

[0122] At least see Figure 8As shown, the main difference between this example and Example 2-1 is that the radiation detector 33 is integrated with the display unit 31, wherein the second circuit layer 52 of the display unit 31 is arranged on the same layer as the first circuit layer 22 of the radiation detector 33, and the structure of the second circuit layer 52 and the first circuit layer 22 on the same layer is called circuit layer 220, the first electrode layer 26 of the radiation detector 33 is arranged on the same layer as the third electrode layer 41 of the display unit 31, the pixel layer 42 of the display unit 31 is arranged on the same layer as the photoelectric conversion layer 27 of the radiation detector 33, and the second electrode layer 28 of the radiation detector 33 is arranged on the same layer as the fourth electrode layer 43 of the display unit 31.

[0123] Specifically, the integrated structure of the radiation detector 33 and the display unit 31 includes a stacked substrate 21 (referred to herein as the first substrate), a radiation shielding layer 24, a first planarization layer 23, a second substrate 40, a circuit layer 220, a second planarization layer 25, an anode layer 261, a device layer, a cathode layer 281 and a packaging layer 29.

[0124] The radiation shielding layer 24 includes shielding patterns 241 and radiation transmission areas between the shielding patterns 241 .

[0125] The circuit layer 220 is a common layer of the second circuit layer 52 and the first circuit layer 22, including a first circuit pattern area 221 of the first circuit layer 22 and a second circuit pattern area 222 of the second circuit layer 52, wherein the first circuit pattern area 221 and the second circuit pattern area 222 are alternately arranged, the first circuit pattern area 221 corresponds to the photoelectric conversion device 1 one by one, the second circuit pattern area 222 corresponds to the pixels 421 of the pixel layer 42 one by one, and the number of the second circuit pattern areas 222 is greater than or equal to the number of the first circuit pattern areas 221, so that the grayscale corresponding to the voltage induced by each photoelectric conversion device 1 is displayed by at least one pixel 421;

[0126] The anode layer 261 is a common layer of the first electrode layer 26 and the third electrode layer 41, including a first electrode pattern area 2612 of the first electrode layer 26 and a third electrode pattern area 2611 of the third electrode layer 41, wherein the first electrode pattern area 2612 and the second electrode pattern area 2611 are alternately arranged;

[0127] The device layer 50 is a common layer of the pixel layer 42 and the photoelectric conversion layer 27 , and includes the pixels 421 of the pixel layer 42 and the photoelectric conversion devices 1 of the photoelectric conversion layer 27 .

[0128] The cathode layer 281 is a common layer of the second electrode layer 28 and the fourth electrode layer 43, and is a one-sided electrode;

[0129] In the orthographic projection of the radiation detection device, the second circuit pattern area 222 is directly opposite to the shielding pattern 241 , and the second circuit pattern area 222 is located within the shielding pattern 241 , and the photoelectric conversion device 1 is directly opposite to the radiation transmission area.

[0130] Example 2-4

[0131] At least see Fig. 9 As shown, in this example, the radiation detector 33 is arranged on the packaging layer 29 of the display unit 31 .

[0132] Specifically, it includes a stacked second substrate 40, a second circuit layer 44, a third electrode layer 41, a pixel layer 42, a fourth electrode layer 43, an encapsulation layer 29, a substrate 21 (referred to as the first substrate here), a first circuit layer 22, a first electrode layer 26, a photoelectric conversion layer 27, and a second electrode layer 28.

[0133] The pixel layer 42 includes a plurality of pixels 421 arranged at intervals and a ray-transmitting area 422 between adjacent pixels 421;

[0134] The photoelectric conversion layer 27 includes photoelectric conversion devices 1 arranged at intervals;

[0135] In the orthographic projection of the radiation detection device, the photoelectric conversion device 1 is located in the radiation transmission area 422 .

[0136] It should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like used above to indicate orientations or positional relationships are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0137] The above description is only a preferred embodiment of the present application and an explanation of the technical principles used. Those skilled in the art should understand that the scope of the invention involved in the present application is not limited to the technical solution formed by a specific combination of the above technical features, but should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the inventive concept. For example, the above features are replaced with the technical features with similar functions disclosed in this application (but not limited to) by each other.

Claims

1. A radiation detector, characterized in that: It includes a first circuit layer, a first electrode layer, a photoelectric conversion layer and a second electrode layer which are stacked; The photoelectric conversion layer includes a plurality of photoelectric conversion devices arranged in an array, the output electrodes of the photoelectric conversion devices are electrically connected to the first electrode layer, and the input electrodes of the photoelectric conversion devices are electrically connected to the second electrode layer; The first circuit layer includes a data line, a gate line, a first switch element and a constant voltage output unit, the first switch element corresponds to the photoelectric conversion device one by one, and a first electrode of the first switch element is electrically connected to a voltage output end of the constant voltage output unit and an output electrode of the photoelectric conversion device, a second electrode of the first switch element is electrically connected to the data line, and a control electrode of the first switch element is electrically connected to the gate line; The constant voltage output unit is used to input a preset constant voltage to the output electrode of the photoelectric conversion device through the voltage output terminal before or after the photoelectric conversion device senses the radiation; The constant voltage output unit comprises a capacitor, a first pole of the capacitor is the voltage output end, and a second pole of the capacitor is used to connect to a constant voltage source; The first electrode layer includes a first electrode pattern and a first light-transmitting area surrounded by the first electrode pattern, the photoelectric conversion layer also includes a second light-transmitting area between adjacent photoelectric conversion devices, and the second electrode layer includes a second electrode pattern and a third light-transmitting area surrounded by the second electrode pattern; In the orthographic projection of the radiation detector, the first light-transmitting area, the second light-transmitting area and the third light-transmitting area at least partially overlap.

2. The radiation detector according to claim 1, characterized in that: It also includes a reset unit, wherein a reset end of the reset unit is connected to the data line and is used to reset the data line after the sensing signal of the photoelectric conversion device is read through the data line.

3. The radiation detector according to claim 2, characterized in that: The reset unit includes a second switch element, a first electrode of the second switch element is connected to the data line, a second electrode of the second switch element is connected to a reset signal, a control electrode of the second switch element is connected to a reset control signal, and a first electrode of the second switch element is the reset end.

4. The radiation detector according to claim 1, characterized in that: A radiation shielding layer is disposed between the first circuit layer and the first electrode layer.

5. A radiation detection device, characterized in that: A radiation detector comprising any one of claims 1 to 4, further comprising a radiation light source and a display unit; The light emitting surface of the ray light source faces the light receiving surface of the ray detector; The display unit is used to display the detection image obtained by each photoelectric conversion device of the radiation detector in response to the radiation dose.

6. The radiation detection device according to claim 5, characterized in that: The display unit comprises a display panel, and the display panel is arranged on a side of the radiation detector away from the light receiving surface.

7. The radiation detection device according to claim 6, characterized in that: The display panel comprises a second circuit layer, a third electrode layer, a pixel layer and a fourth electrode layer which are stacked; The second circuit layer is arranged on the same layer as the first circuit layer, the first circuit layer includes a first circuit pattern area, the second circuit layer includes a second circuit pattern area, the first circuit pattern area and the second circuit pattern area are alternately arranged, the first circuit pattern area corresponds one-to-one to the photoelectric conversion device, the second circuit pattern area corresponds one-to-one to the pixels of the pixel layer, and the number of the second circuit pattern areas is greater than or equal to the number of the first circuit pattern areas.

8. The radiation detection device according to claim 5, characterized in that: The display unit comprises a second circuit layer, a third electrode layer, a pixel layer and a fourth electrode layer which are stacked; The second circuit layer is arranged in the same layer as the first circuit layer, the first circuit layer includes a first circuit pattern area, the second circuit layer includes a second circuit pattern area, the first circuit pattern area and the second circuit pattern area are arranged alternately, the first circuit pattern area corresponds to the photoelectric conversion device one by one, the second circuit pattern area corresponds to the pixels of the pixel layer one by one, and the number of the second circuit pattern areas is greater than or equal to the number of the first circuit pattern areas; The first electrode layer and the third electrode layer are arranged in the same layer, the first electrode layer includes a first electrode pattern area, the third electrode layer includes a third electrode pattern area, and the first electrode pattern area and the second electrode pattern area are alternately arranged; The second electrode layer and the fourth electrode layer are an integrated structure; A layer of the second circuit layer away from the third electrode layer is provided with a radiation shielding layer, and the radiation shielding layer includes a shielding pattern and a radiation transmission area between the shielding patterns; In the orthographic projection of the radiation detection device, the second circuit pattern area is directly opposite to the shielding pattern, and the second circuit pattern area is located within the shielding pattern, and the photoelectric conversion device is directly opposite to the radiation transmission area.

9. The radiation detection device according to claim 6, characterized in that: The display panel comprises a pixel layer, wherein the pixel layer comprises a plurality of pixels arranged at intervals and a ray transmission area between adjacent pixels; In the orthographic projection of the radiation detection device, the photoelectric conversion device is located in the radiation transmission area.

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