semiconductor process equipment

Abstract

The present application discloses a semiconductor process device, which relates to the field of semiconductor equipment. A semiconductor process device includes a process tube, multiple air inlet pipes, and multiple groups of electrode assemblies. A process cavity and multiple buffer cavities are formed in the process tube. Multiple air inlet pipes extend into the multiple buffer cavities accordingly. The side wall of the process tube is provided with an exhaust port connected to the process cavity. Each buffer cavity is provided corresponding to at least one group of electrode assemblies, and the electrode assembly extends into the buffer cavity and is connected to a radio frequency power supply. The electrode assembly includes a deformable electrode core, multiple electrode tubes, and an electrode mesh. The multiple electrode tubes are arranged in sequence along the extension direction of the electrode core, and there is a preset gap between two adjacent electrode tubes. The electrode core is inserted into the multiple electrode tubes and is respectively connected to the multiple electrode tubes. The electrode mesh is arranged along the extension direction of the electrode core and is sleeved on the outside of the multiple electrode tubes. The present application can solve the problems of high electrode cost and short service life.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor equipment technology, and specifically relates to a semiconductor process equipment. Background Art

[0002] Atomic layer deposition equipment uses radio frequency to add precursors to the vacuum chamber during the process cycle to achieve precise control of film thickness. This equipment can be used to deposit SiO2, SiN x , TiN, AlN and other thin films. In vertical atomic layer deposition equipment, the key technology of the equipment is to use high-frequency electric fields to decompose process gases into plasma. Therefore, the plasma generation device is one of the key structures to ensure the realization of the process.

[0003] However, the electrodes used in some current plasma generation devices have a multi-layer woven nickel mesh structure on the outside. Due to the high cost of the nickel mesh weaving process and the requirement for more nickel material, the cost of the electrodes is high and the manufacturing is difficult. At the same time, the electrode material is relatively soft. During use, the length of the electrode is easily affected by gravity, which affects the service life of the electrode. Summary of the Invention

[0004] The purpose of the embodiments of the present application is to provide a semiconductor process equipment that can solve the above problems.

[0005] In order to solve the above technical problems, this application is implemented as follows:

[0006] An embodiment of the present application provides a semiconductor process equipment, the semiconductor process equipment comprising: a process tube, a plurality of air inlet tubes, and a plurality of electrode assemblies;

[0007] A process chamber and a plurality of buffer chambers are formed inside the process tube. The plurality of buffer chambers are distributed along the circumference of the process tube and are all connected to the process chamber. The plurality of inlet pipes extend through the side wall of the process tube and correspond one by one to the plurality of buffer chambers for introducing process gas into the corresponding buffer chambers. The side wall of the process tube is provided with an exhaust port, which is connected to the process chamber and is used to discharge the gas in the process chamber. Each buffer chamber is arranged corresponding to at least one group of the electrode assemblies. One end of each group of the electrode assemblies passes through the side wall of the process chamber and extends into the corresponding buffer chamber. The other end of each group of the electrode assemblies is used to be connected to a radio frequency power supply, wherein

[0008] The electrode assembly includes a deformable electrode core, multiple electrode tubes and an electrode mesh. The multiple electrode tubes are arranged in sequence along the extension direction of the electrode core, and there is a preset gap between two adjacent electrode tubes. The electrode core is inserted into the multiple electrode tubes and is respectively connected to the multiple electrode tubes; the electrode mesh is arranged along the extension direction of the electrode core and is sleeved on the outside of the multiple electrode tubes.

[0009] Compared with some current plasma generating devices that use a multi-layer nickel mesh structure woven on the outside of the electrode, the semiconductor process equipment in the embodiment of the present application uses a new type of electrode assembly, which can support and protect the deformable electrode core through multiple electrode tubes, thereby improving the overall strength of the electrode assembly, making it less likely for the electrode assembly to change in length under the action of gravity, and thus extending the service life of the electrode assembly; at the same time, the electrode assembly in the embodiment of the present application does not have multiple layers of nickel mesh on the outside of the electrode core, but instead has multiple electrode tubes sequentially arranged on the outside of the electrode core along the extension direction of the electrode core, and electrode mesh is arranged on the outside of the multiple electrode tubes. This method can reduce the use of nickel mesh, and there is no need to set up multiple layers of nickel mesh, thereby reducing the manufacturing cost and manufacturing difficulty of the electrode assembly, and therefore can ensure the service life of the semiconductor process equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 This is a first structural schematic diagram of the semiconductor process equipment disclosed in an embodiment of the present application;

[0011] Figure 2 A second structural schematic diagram of the semiconductor process equipment disclosed in an embodiment of the present application;

[0012] Figure 3 This is a schematic structural diagram of the process tube, protective tube, and air intake tube disclosed in the embodiments of this application;

[0013] Figure 4 A partial schematic diagram of the process tube, protective tube, air inlet pipe, electrode assembly, first connecting assembly, and second connecting assembly disclosed in an embodiment of the present application;

[0014] Figure 5 A partial schematic diagram of the electrode assembly, the first connecting assembly, and the second connecting assembly disclosed in an embodiment of the present application;

[0015] Figure 6 This is a first schematic diagram of an electrode assembly disclosed in an embodiment of the present application;

[0016] Figure 7 This is a second schematic diagram of the electrode assembly disclosed in an embodiment of the present application.

[0017] Description of reference numerals:

[0018] 100 - electrode assembly; 110 - electrode core; 120 - electrode tube; 130 - electrode mesh; 140 - second connection end;

[0019] 200-process pipe; 210-process chamber; 220-buffer chamber; 230-exhaust port;

[0020] 300-protection tube;

[0021] 400 - first connecting assembly; 410 - electrode holder; 411 - through cavity; 420 - first locking member; 430 - second locking member; 440 - sealing member; 450 - shielding gas inlet;

[0022] 500 - second connection assembly; 510 - electrode terminal; 511 - first connection end; 520 - fastener; 530 - gasket;

[0023] 600-intake pipe;

[0024] 700-Support block. DETAILED DESCRIPTION

[0025] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0026] The terms "first," "second," and the like in the specification and claims of this application are used to distinguish similar objects, and are not used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of this application can be implemented in an order other than that illustrated or described herein, and that the objects distinguished by "first," "second," and the like are generally of the same type, and do not limit the number of objects; for example, the first object can be one or more. In addition, the term "and / or" in the specification and claims refers to at least one of the connected objects, and the character " / " generally indicates that the objects connected are in an "or" relationship.

[0027] The embodiments of the present application are described in detail below through specific embodiments and their application scenarios in conjunction with the accompanying drawings.

[0028] refer to Figures 1 to 7 The present invention discloses a semiconductor process apparatus, which may be a vertical atomic layer deposition apparatus, or other apparatus, and is not specifically limited in the present invention. The disclosed semiconductor process apparatus includes a process tube 200, a plurality of inlet tubes 600, and a plurality of electrode assemblies 100.

[0029] The process tube 200 is internally formed with a process chamber 210 and multiple buffer chambers 220. The multiple buffer chambers 220 are distributed along the circumference of the process tube 200 and are all connected to the process chamber 210. Multiple inlet pipes 600 extend through the sidewalls of the process tube 200 and correspond to the multiple buffer chambers 220, respectively, for introducing process gas into the corresponding buffer chambers 220. The sidewalls of the process tube 200 are provided with exhaust ports 230, which are connected to the process chamber 210 and are used to exhaust gas from the process chamber 210. Each buffer chamber 220 is provided corresponding to at least one set of electrode assemblies 100. One end of each set of electrode assemblies 100 extends through the sidewalls of the process chamber 210 into the corresponding buffer chamber 220, and the other end of each set of electrode assemblies 100 is used to connect to an RF power supply.

[0030] Alternatively, the housing may be welded to the sidewall of the process tube 200 to form a buffer chamber 220 within the process tube 200. Alternatively, the buffer chamber 220 may be formed simultaneously when the process tube 200 is manufactured. The method for forming the buffer chamber 220 is not specifically limited in the embodiments of the present application.

[0031] By providing the electrode assembly 100, the process gas introduced into the buffer chamber 220 through the inlet pipe 600 can be excited into a plasma state, thereby forming a plasma. The plasma then enters the process chamber 210 from the buffer chamber 220 to process the wafers in the process chamber 210. During this process, the electrode assembly 100 is powered by a radio frequency cable. During the process, the process exhaust gas generated in the process chamber 210 can be discharged through the exhaust port 230 to prevent excessive gas pressure in the process chamber 210.

[0032] The electrode assembly 100 includes an electrode core 110, a plurality of electrode tubes 120, and an electrode mesh 130. The plurality of electrode tubes 120 are sequentially arranged along the extension direction of the electrode core 110, with a preset gap between adjacent electrode tubes 120. The electrode core 110 is inserted into and connected to the plurality of electrode tubes 120. The electrode mesh 130 is arranged along the extension direction of the electrode core 110 and sleeved on the outer sides of the plurality of electrode tubes 120. Thus, the electrode core 110, the plurality of electrode tubes 120, and the electrode mesh 130 together form a long strip of electrode assembly 100, which extends into the buffer chamber 220 to generate a high-frequency electric field, thereby exciting the process gas entering the buffer chamber 220 to generate plasma, and then enters the process chamber 210 from the buffer chamber 220 to achieve the process reaction.

[0033] Optionally, the length of the electrode tube 120 is 8 mm to 16 mm, including 8 mm, 10 mm, 12 mm, 14 mm, 16 mm, etc. Of course, other sizes are also possible. It should be noted that when the length of the electrode tube 120 is too long, it is not conducive to the installation of the electrode assembly 100. When the length of the electrode tube 120 is too short, it will increase the processing cost. Therefore, when designing and manufacturing the electrode tube 120, it is necessary to comprehensively consider the installation requirements and cost requirements.

[0034] In order to allow the electrode assembly 100 to easily pass through the side wall of the process tube 200 and extend into the buffer chamber 220, the electrode core 110 in the embodiment of the present application adopts a soft electrode core 110, so that the electrode core 110 can be deformed, thereby adapting to the installation environment through deformation, thereby reducing the difficulty of installing the electrode assembly 100.

[0035] Considering that the soft electrode core 110 can easily affect the service life of the electrode assembly 100, in order to extend the service life of the electrode assembly 100, the electrode assembly 100 needs to have sufficient strength. Based on this, multiple electrode tubes 120 are sequentially arranged on the outside of the electrode core 110 along the extension direction of the electrode core 110. Therefore, the multiple electrode tubes 120 can support and protect the electrode core 110, thereby improving the overall strength of the electrode assembly 100 and reducing the length change of the electrode assembly 100 during use.

[0036] It should be noted here that the number of electrode tubes 120 can be determined based on the overall length of the electrode assembly 100. When the required length of the electrode assembly 100 is larger, the electrode core 110 is longer, and more electrode tubes 120 are required to be sleeved on the outside of the electrode core 110; when the required length of the electrode assembly 100 is smaller, the electrode core 110 is shorter, and fewer electrode tubes 120 are required to be sleeved on the outside of the electrode core 110.

[0037] In order to make the electrode assembly 100 deformable as a whole, a preset gap is provided between two adjacent electrode tubes 120. The preset gap allows a certain floating space to be provided between the two adjacent electrode tubes 120, so that the electrode assembly 100 can be deformed without causing interference, thereby ensuring the overall flexibility of the electrode assembly 100. The preferred preset gap is 30-40 mm, including 30 mm, 32 mm, 35 mm, 38 mm, 40 mm, etc. At the same time, each electrode tube 120 can also improve the local strength of the electrode assembly 100, thereby both protecting the electrode core 110 and alleviating changes in the length of the electrode core 110.

[0038] By arranging the electrode mesh 130 on the outside of the plurality of electrode tubes 120 , the difference in electric field strength caused by the preset gap between two adjacent electrode tubes 120 can be compensated, so that the plasma can be distributed more evenly in the direction of the electrode assembly 100 .

[0039] Based on the above arrangement, process gases can be introduced into multiple buffer cavities 220 respectively through multiple air inlet pipes 600 to meet the demand for process gases; since the electrode assembly 100 can form a high-frequency electric field in the buffer cavity 220, the process gases introduced into each buffer cavity 220 are excited to a plasma state under the action of the high-frequency electric field, generating plasma, and the plasma enters the inner cavity of the process tube 200 from the buffer cavity 220 to participate in the process reaction.

[0040] In an embodiment of the present application, by arranging multiple buffer cavities 220 and setting an electrode assembly 100 corresponding to each buffer cavity 220, the process gas can be excited simultaneously in multiple buffer cavities 220. Compared with the exhaust port 230 and the single buffer cavity, the multiple buffer cavities 220 are beneficial to improving the uniformity of the process.

[0041] By using multiple electrode assemblies 100 to excite the process gases in multiple buffer chambers 220 to form plasma, the power consumption of each electrode assembly 100 can be reduced under the same process conditions, thereby helping to extend the service life of the electrode assembly 100.

[0042] In the embodiment of the present application, the number of buffer chambers 220 used can be flexibly adjusted according to different process requirements, thereby avoiding the situation where the energy consumption increases due to the improper use of the number of buffer chambers 220, and achieving the effect of energy saving and emission reduction to a certain extent.

[0043] After the process gases have reacted, reaction waste gas is formed in the process chamber 210. The reaction waste gas can be discharged through the exhaust port 230, thereby maintaining a substantially balanced pressure in the process chamber 210. Optionally, the exhaust port 230 can be connected to an external vacuum pumping device via an exhaust pipe, so that the reaction waste gas in the process chamber 210 can be discharged through the vacuum pumping device. Furthermore, under the action of the vacuum pumping device, a certain degree of vacuum can be generated in the process chamber 210.

[0044] Compared with some current plasma generating devices that use a multi-layer nickel mesh structure woven on the outside of the electrode, the semiconductor process equipment in the embodiment of the present application adopts a new type of electrode assembly 100, which can support and protect the deformable electrode core 110 through multiple electrode tubes 120, thereby improving the overall strength of the electrode assembly 100, making it less likely for the electrode assembly 100 to change in length under the action of gravity, and thus extending the service life of the electrode assembly 100 to prevent the electrode assembly 100 from affecting the uniformity of the plasma; at the same time, the electrode assembly 100 in the embodiment of the present application does not have multiple layers of nickel mesh on the outside of the electrode core 110, but instead has multiple electrode tubes 120 sequentially sleeved on the outside of the electrode core 110 along the extension direction of the electrode core 110, and has electrode mesh 130 sleeved on the outside of the multiple electrode tubes 120. This method can reduce the use of nickel mesh, and there is no need to set up multiple layers of nickel mesh, thereby reducing the manufacturing cost and manufacturing difficulty of the electrode assembly 100.

[0045] In some embodiments, the electrode assembly 100 may include a plurality of electrode cores 110, each of which is inserted into a plurality of electrode tubes 120, and each electrode core 110 is fixedly connected to the inner walls of the plurality of electrode tubes 120. Based on this, the plurality of electrode tubes 120 can support and protect the electrode cores 110, thereby improving the strength of the electrode assembly 100 while ensuring the overall flexibility of the electrode assembly 100, thereby extending the service life of the electrode assembly 100. Furthermore, the plurality of electrode cores 110 are each connected to the inner wall of each electrode tube 120, making the connection between two adjacent electrode tubes 120 more secure and stable, thereby ensuring the service life of the electrode assembly 100.

[0046] Optionally, the electrode core 110 can be fixed to the inner wall of the electrode tube 120 by welding, bonding, etc., thereby improving the firmness of the connection between the electrode core 110 and the inner wall of the electrode tube 120 and further extending the service life of the electrode assembly 100.

[0047] In a more specific embodiment, the electrode assembly 100 may include two electrode cores 110, each of which is fixedly connected to opposite sides of the inner wall of the electrode tube 120. This method can fix the opposite sides of the inner wall of each electrode tube 120, so that the force applied to the electrode tube 120 is more uniform, thereby ensuring the stability of the connection between two adjacent electrode tubes 120. Of course, the electrode assembly 100 may also include other numbers of electrode cores 110, and the number of electrode cores 110 is not specifically limited in the embodiments of the present application.

[0048] The electrode core 110 may be a nickel wire, which has a relatively small diameter and is relatively flexible, so that the electrode assembly 100 can be freely deformed. Of course, the electrode core 110 may also be made of other materials and in other shapes. The material and shape of the electrode core 110 are not specifically limited in the embodiments of the present application.

[0049] The electrode tube 120 may be a nickel tube. The nickel tube has a larger diameter than the nickel wire and is relatively hard, thereby supporting and protecting the electrode core 110 disposed therein. This alleviates the problem of length deformation of the electrode core 110, which can affect its service life. Of course, the electrode tube 120 may also be made of other materials, and the material of the electrode tube 120 is not specifically limited in the embodiments of the present application.

[0050] The electrode mesh 130 can be a nickel mesh. When the electrode assembly 100 has the same external dimensions, compared to the method of weaving multiple layers of nickel mesh on the outside of the electrode core 110, the method of arranging the electrode tube 120 on the outside of the electrode tube 120 and sheathing the electrode mesh 130 does not require weaving multiple layers of nickel mesh, but only requires a thinner nickel mesh layer, such as a single layer of nickel mesh. This method can reduce the amount of nickel used, thereby reducing manufacturing costs and manufacturing difficulty. Of course, the electrode mesh 130 can also be made of other materials, and the material of the electrode mesh 130 is not specifically limited in the embodiment of the present application.

[0051] In some embodiments, two buffer chambers 220 are formed inside the process tube 200, and the two buffer chambers 220 are symmetrically arranged on either side of the exhaust port 230. Based on this, the process gas is excited into a plasma state by the electrode assembly 100 in each of the two buffer chambers 220, forming plasma, and then flows into the process chamber 210 through the two buffer chambers 220. This can improve the uniformity of the plasma in the process chamber 210, thereby improving the film quality of the process product.

[0052] Of course, more buffer cavities 220 can be provided in the circumference of the process tube 200 and symmetrically distributed on both sides of the exhaust port 230. In this way, by increasing the number of buffer cavities 220 and making multiple buffer cavities 220 evenly distributed around the process chamber 210, it is convenient to form a more uniform plasma atmosphere in the process chamber 210, thereby further improving the uniformity of the film thickness.

[0053] In the embodiment of the present application, each buffer chamber 220 is provided with a plurality of through-holes on a side facing away from the process tube 200. The plurality of through-holes are arranged axially along the process tube 200 to connect the buffer chamber 220 with the process chamber 210. This increases the axial flow area of ​​the process gas in the process tube 200, thereby achieving a more uniform distribution of the process gas within the process chamber 210 and improving the film quality of the processed product.

[0054] In some embodiments, the semiconductor process equipment may further include multiple sets of protection tubes 300, with one set of protection tubes 300 corresponding to one set of electrode assemblies 100. The protection tubes 300 extend through the sidewall of the process tube 200 into the buffer cavity 220, and the electrode assemblies 100 are correspondingly inserted into the protection tubes 300. Based on this, by inserting the electrode assemblies 100 into the protection tubes 300, on the one hand, the electrode assemblies 100 can be installed and guided through the protection tubes 300 so that the ends of the electrode assemblies 100 can extend into the buffer cavity 220. On the other hand, the protection tubes 300 can also prevent contaminants from entering the process cavity 210 and provide protection for the electrode assemblies 100.

[0055] Optionally, the protection tube 300 may be a quartz tube, etc. In addition, the protection tube 300 may be fixed to the process tube 200 by welding, bonding, clamping, screwing, etc., to ensure the firmness and stability of the connection between the protection tube 300 and the process tube 200 .

[0056] In a more specific embodiment, a set of electrode assemblies 100 may include two electrode assemblies 100, and a set of protective tubes 300 may include two protective tubes 300. The two electrode assemblies 100 are respectively inserted into the two protective tubes 300, and the two electrode assemblies 100 are respectively connected to the positive and negative poles of the video power supply. Based on this, the two electrode assemblies 100 in each set of electrode assemblies 100 can be installed and protected by the two protective tubes 300.

[0057] Furthermore, when installing the electrode assemblies 100, the lengths of the two electrode assemblies 100 in each set of electrode assemblies 100 within the two protective tubes 300 are kept as consistent as possible to ensure uniformity in the generated electric field. Furthermore, the lengths of the cables connecting the two electrode assemblies 100 to the RF source are kept as consistent as possible to ensure phase consistency in the two sets of electric fields generated by the two electrode assemblies 100.

[0058] In order to relatively fix and seal the electrode assembly 100 and the protective tube 300, and connect the electrode assembly 100 to the RF power supply, the semiconductor process equipment may further include a first connecting assembly 400 and a second connecting assembly 500. The first connecting assembly 400 is sleeved on the outside of the protective tube 300 and the second connecting assembly 500, and is sealed and connected to the protective tube 300 and the second connecting assembly 500 respectively. One end of the second connecting assembly 500 is connected to the electrode assembly 100, and the other end of the second connecting assembly 500 is connected to the RF power supply. Based on this, the electrode assembly 100 can be installed on the protective tube 300 through the first connecting assembly 400 and sealed between the protective tube 300. The electrode assembly 100 can be electrically connected to the RF cable through the second connecting assembly 500 and sealed with the first connecting assembly 400 bracket to protect the connection between the second connecting assembly 500 and the electrode assembly 100 and prevent oxidation of the electrode assembly 100.

[0059] In order to further improve the firmness and stability of the connection between the first connecting component 400 and the protective tube 300, so as to improve the firmness and stability of the installation of the electrode assembly 100, the semiconductor process equipment may also include a support block 700, which is fixed to the water-cooled pressure ring (not shown in the figure) of the semiconductor process equipment by screws, and the top of the support block 700 is abutted against the first connecting component 400 to support the first connecting component 400. In this way, the first connecting component 400 can be stably installed through the cooperation of the support block 700 and the protective tube 300, thereby improving the firmness and stability of the installation of the electrode assembly 100.

[0060] In some embodiments, the first connecting assembly 400 may include an electrode holder 410, a first locking member 420, and a second locking member 430, wherein the electrode holder 410 has a through cavity 411, one end of the electrode assembly 100 is disposed in the through cavity 411, at least a portion of the second connecting assembly 500 is disposed in the through cavity 411 and is connected to the electrode assembly 100, the electrode holder 410 is connected to the protective tube 300 via the first locking member 420, and the second connecting assembly 500 is sealed to the electrode holder 410 via the second locking member 430. Based on this, the first connecting assembly 400 and the second connecting assembly 500 can be assembled, and the sealing between the two can be ensured.

[0061] In order to install the first connecting component 400 to the protective tube 300, the first locking member 420 can be arranged at the end of the protective tube 300 facing away from the process tube 200. When the first connecting component 400 needs to be installed, it is only necessary to connect the electrode holder 410 to the first locking member 420 to install the first connecting component 400 to the protective tube 300.

[0062] Optionally, the first locking member 420 may be provided with a clearance hole. The first locking member 420 can be considered a nut, which is inserted through the clearance hole onto the outer wall of the protective tube 300 and fixedly connected to the protective tube 300. Of course, the first locking member 420 can also be movably inserted onto the outer side of the protective tube 300, with a barrier portion provided on the outer side of the protective tube 300 to prevent the first locking member 420 from separating from the protective tube 300. This ensures the stable installation of the first connecting assembly 400 and the protective tube 300.

[0063] Optionally, the first locking member 420 can be connected to one end of the electrode holder 410 by a thread, so that the first connecting assembly 400 can be detachably installed with the protective tube 300, so as to facilitate the disassembly and assembly of the electrode holder 410, and further facilitate the replacement or repair of the electrode assembly 100.

[0064] Based on the above arrangement, when the electrode assembly 100 needs to be disassembled, the electrode holder 410 only needs to be separated from the first locking member 420 , and the electrode holder 410 and the electrode assembly 100 can be removed together, so as to facilitate replacement or repair of the electrode assembly 100 .

[0065] Considering that one end of the second connecting component 500 is located in the through cavity 411 and connected to the electrode assembly 100, and the other end is used to connect to the external RF cable, based on this, the second locking member 430 is provided with an avoidance hole to allow the other end of the second connecting component 500 to extend outside the through cavity 411, thereby facilitating the connection of the second connecting component 500 with the external RF cable.

[0066] Optionally, the second locking member 430 and the other end of the electrode holder 410 can be connected by a thread, and the second locking member 430 can be regarded as a nut for easy disassembly. Based on this, when the second connection component 500 does not need to be disassembled, the second locking member 430 is fastened to the other end of the electrode holder 410. At this time, the second connection component 500 can be firmly fixed to the electrode holder 410 by the second locking member 430 to prevent the second connection component 500 from separating from the electrode assembly 100 and affecting the transmission energy; when the second connection component 500 needs to be disassembled, it is only necessary to remove the second locking member 430 from the electrode holder 410 to release the limiting effect on the second connection component 500. At this time, the second connection component 500 can be removed, thereby facilitating the disassembly and assembly of the second connection component 500 and improving the replacement or maintenance efficiency of the second connection component 500.

[0067] In addition, since the connection between the electrode assembly 100 and the second connection assembly 500 is located inside the through cavity 411, the electrode holder 410 can protect the connection between the two to prevent interference from external factors.

[0068] In some embodiments, the semiconductor process equipment may further include a protective gas pipeline (not shown in the figure), a protective gas inlet 450 is provided through the side wall of the cavity 411, and the two protective tubes 300 in the same group are sealed and connected in the corresponding buffer cavity 220. The protective gas pipeline is connected to the interior of the protective tube 300 through the protective gas inlet 450 for introducing protective gas.

[0069] Based on the above arrangement, external protective gas (i.e., anti-oxidation gas) can be introduced into the through cavity 411 through the protective gas inlet 450, passed into the buffer cavity 220 through one of the protective tubes 300, and discharged from the other protective tube 300, thereby realizing the circulation of the protective gas, thereby effectively alleviating the problem of unstable transmission caused by oxidation of the electrode assembly 100.

[0070] In order to achieve a stable connection between the electrode assembly 100 and the second connecting assembly 500, the second connecting assembly 500 may include an electrode terminal 510 and a fastener 520, wherein the first connecting end 511 of the electrode terminal 510 located in the through cavity 411 is provided with a first mounting hole, and the second connecting end 140 of the electrode assembly 100 located in the through cavity 411 is provided with a second mounting hole. During installation, the first connecting end 511 and the second connecting end 140 are overlapped with each other, and the fastener 520 passes through the first mounting hole and the second mounting hole in sequence, and fastens the first connecting end 511 and the second connecting end 140.

[0071] Based on the above configuration, by passing the fastener 520 through the first mounting hole and the second mounting hole, the first connection end 511 and the second connection end 140 will not be relatively misaligned, thereby effectively preventing the first connection end 511 and the second connection end 140 from detaching from each other.

[0072] Furthermore, the second connecting component 500 can also include a gasket 530, which is provided with a third mounting hole. The gasket 530 is arranged on the side of the second connecting end 140 away from the first connecting end 511, and the first mounting hole, the second mounting hole and the third mounting hole are coaxially arranged, and the fastener 520 is passed through the first mounting hole, the second mounting hole and the third mounting hole, and the second connecting end 140 is pressed against the first connecting end 511 through the gasket 530, so that the second connecting end 140 and the first connecting end 511 are pressed against each other, thereby ensuring good contact between the first connecting end 511 and the second connecting end 140, avoiding the occurrence of false connection.

[0073] Based on the above settings, the embodiment of the present application can not only ensure the firmness and stability of the connection between the first connection end 511 and the second connection end 140, but also effectively avoid the occurrence of false connections, thereby enabling stable transmission of electrical energy between the electrode assembly 100 and the second connection assembly 500 without causing electrical energy loss.

[0074] Optionally, both the first connection end 511 and the second connection end 140 may be flat structures, so as to increase the contact area between the two and further improve the stability of the connection.

[0075] In order to prevent external factors from entering the through cavity 411 and affecting the connection between the electrode assembly 100 and the second connecting assembly 500, in some embodiments, a sealing member 440 may be provided between the first locking member 420 and the electrode holder 410 to seal the gap between the first locking member 420 and the electrode holder 410.

[0076] In addition, a sealing member 440 may be provided between the second locking member 430 and the electrode holder 410 , and the gap between the second locking member 430 and the electrode holder 410 may be sealed by the sealing member 440 .

[0077] Based on the above-mentioned arrangement, the sealing member 440 can seal the through cavity 411 when the first locking member 420 is locked with the electrode holder 410, and when the second locking member 430 is locked with the electrode holder 410, thereby preventing external impurities from entering the through cavity 411 and affecting the connection between the electrode assembly 100 and the second connecting assembly 500, thereby ensuring the stability and reliability of the connection between the electrode assembly 100 and the second connecting assembly 500.

[0078] Optionally, the sealing member 440 may be a sealing ring, which is respectively mounted on both ends of the electrode holder 410 to prevent the electrode assembly 100 and the second connecting assembly 500 from extending outside the through cavity 411 .

[0079] The working principle of the semiconductor process equipment in the embodiment of the present application is as follows:

[0080] An external RF source transmits energy to the electrode assembly 100 through an RF cable to form a high-frequency electric field in the buffer chamber 220 through the electrode assembly 100; process gas is introduced into the buffer chamber 220 through the process gas pipeline and the air inlet pipe 600 in turn, and the process gas is excited by the high-frequency electric field in the buffer chamber 220 to become a plasma state, generating plasma. The plasma enters the process chamber 210 from the buffer chamber 220 to participate in the reaction, thereby realizing the process.

[0081] To sum up, in the embodiments of the present application, by improving and optimizing the structure of the electrode assembly 100, the use of high-value materials (such as nickel) can be reduced, thereby reducing the cost and complexity of the electrode assembly 100. In addition, by optimizing the electrode structure, the strength of the electrode assembly 100 can be improved while ensuring the overall softness of the electrode assembly 100, thereby extending the service life of the electrode assembly 100 and improving the reliability of the electrode assembly 100.

[0082] By optimizing the layout of the buffer chamber 220 and improving the uniform distribution of the high-frequency electric field, the uniformity of the plasma in the process chamber 210 can be enhanced, thereby improving the process performance and ensuring the uniformity of the film thickness.

[0083] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of this application, ordinary technicians in this field can also make many forms without departing from the purpose of this application and the scope of protection of the claims, all of which are within the protection of this application.

Claims

1. A semiconductor process equipment, characterized in that: include: A process tube (200), a plurality of air inlet tubes (600), and a plurality of electrode assemblies (100); A process chamber (210) and a plurality of buffer chambers (220) are formed inside the process tube (200). The plurality of buffer chambers (220) are distributed along the circumference of the process tube (200) and are all in communication with the process chamber (210). The plurality of air inlet pipes (600) extend through the side wall of the process tube (200) and correspond to each other in the plurality of buffer chambers (220) for introducing process gas into the corresponding buffer chambers (220). The side wall of the process tube (200) is provided with an exhaust port (230). The exhaust port (230) ) is communicated with the process chamber (210) and is used to discharge the gas in the process chamber (210), each buffer chamber (220) is provided corresponding to at least one group of the electrode assemblies (100), each group of the electrode assemblies (100) includes two electrode assemblies (100), one end of each of the two electrode assemblies (100) respectively passes through the side wall of the process chamber (210) and extends into the corresponding buffer chamber (220), and the other end of each of the two electrode assemblies (100) is used to be connected to the positive and negative electrodes of the radio frequency power supply, wherein, The electrode assembly (100) comprises a deformable electrode core (110), a plurality of electrode tubes (120), and an electrode mesh (130); the plurality of electrode tubes (120) are sequentially arranged along the extension direction of the electrode core (110), and a preset gap is provided between two adjacent electrode tubes (120); the electrode core (110) is passed through the plurality of electrode tubes (120) and is respectively connected to the plurality of electrode tubes (120); and the electrode mesh (130) is arranged along the extension direction of the electrode core (110) and is sleeved on the outside of the plurality of electrode tubes (120).

2. The semiconductor process equipment according to claim 1, wherein: The electrode assembly (100) includes a plurality of electrode cores (110); The plurality of electrode cores (110) are all inserted into the plurality of electrode tubes (120), and each of the electrode cores (110) is fixedly connected to the inner walls of the plurality of electrode tubes (120).

3. The semiconductor process equipment according to claim 1, wherein: The electrode core (110) is a nickel wire; And / or, the electrode tube (120) is a nickel tube; And / or, the electrode mesh (130) is a nickel mesh.

4. The semiconductor process equipment according to claim 1, wherein: Two buffer chambers (220) are formed inside the process tube (200), and the two buffer chambers (220) are symmetrically arranged on both sides of the exhaust port (230). A plurality of through holes are opened on a side of each buffer chamber (220) facing away from the process tube (200), and the plurality of through holes are arranged along the axial direction of the process tube (200) for connecting the buffer chamber (220) and the process chamber (210).

5. The semiconductor process equipment according to claim 1, wherein: The semiconductor process equipment further comprises a plurality of groups of protection tubes (300), wherein a group of the protection tubes (300) is arranged correspondingly to a group of the electrode assemblies (100), the protection tubes (300) pass through the side wall of the process tube (200) and extend into the buffer cavity (220), and the electrode assemblies (100) are correspondingly arranged in the protection tubes (300).

6. The semiconductor process equipment according to claim 5, wherein: A group of the protection tubes (300) includes two protection tubes (300), and the two electrode assemblies (100) are respectively and correspondingly arranged in the two protection tubes (300).

7. The semiconductor process equipment according to claim 6, wherein: The semiconductor process equipment further comprises a first connection component (400) and a second connection component (500) arranged corresponding to the electrode component (100); The first connecting component (400) is sleeved on the outside of the protective tube (300) and the second connecting component (500), and is sealed and connected to the protective tube (300) and the second connecting component (500), respectively; one end of the second connecting component (500) is connected to the electrode assembly (100), and the other end of the second connecting component (500) is connected to the radio frequency power supply.

8. The semiconductor process equipment according to claim 7, wherein: The first connection assembly (400) comprises an electrode holder (410), a first locking member (420) and a second locking member (430); The electrode holder (410) has a through cavity (411), one end of the electrode assembly (100) is disposed in the through cavity (411), and at least a portion of the second connecting assembly (500) is disposed in the through cavity (411) and connected to the electrode assembly (100); The electrode holder (410) is sealedly connected to the protective tube (300) via the first locking member (420), and the second connection assembly (500) is sealedly connected to the electrode holder (410) via the second locking member (430).

9. The semiconductor process equipment according to claim 8, wherein: The second connection assembly (500) comprises an electrode terminal (510) and a fastener (520); The first connection end (511) of the electrode terminal (510) located in the through cavity (411) is provided with a first mounting hole, and the second connection end (140) of the electrode assembly (100) located in the through cavity (411) is provided with a second mounting hole; The first connection end (511) and the second connection end (140) are overlapped with each other, and the fastener (520) passes through the first mounting hole and the second mounting hole in sequence to fasten the first connection end (511) and the second connection end (140) together.

10. The semiconductor process equipment according to claim 8, wherein: A sealing member (440) is provided between the first locking member (420) and the electrode seat (410), and the sealing member (440) is used to seal the gap between the first locking member (420) and the electrode seat (410); And / or, a sealing member (440) is provided between the second locking member (430) and the electrode holder (410), and the sealing member (440) is used to seal the gap between the second locking member (430) and the electrode holder (410).

11. The semiconductor process equipment according to claim 8, wherein: The semiconductor process equipment further includes a protective gas pipeline; A protective gas inlet (450) is provided on the side wall of the through cavity (411), and the two protective tubes (300) in the same group are sealed and connected in the corresponding buffer cavity (220). The protective gas pipeline is connected to the interior of the protective tube (300) through the protective gas inlet (450) for introducing protective gas.

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