An energy generator

Abstract

The present application relates to the field of energy technology, and in particular to an energy generator for solving the problem that a generator that collects raindrop energy cannot convert alternating current into direct current. The energy generator includes a first electrode plate and a second electrode plate, wherein the first electrode plate covers the upper surface of the second electrode plate, and the first electrode plate is a polymer film with an electronegativity higher than a set threshold; a first semiconductor sheet and a second semiconductor sheet, wherein the upper surfaces of the first semiconductor sheet and the second semiconductor sheet are both in contact with the lower surface of the second electrode plate, so that Schottky junctions are formed between the first semiconductor sheet and the second semiconductor sheet and the second electrode plate respectively; and the first semiconductor sheet and the second semiconductor sheet are separated by a set distance; wherein the second electrode plate is a metal conductor.

Description

[0001] This application claims priority to the Chinese patent application filed with the Intellectual Property Office of the People's Republic of China on April 13, 2022, with application number 202210387612.5 and invention name "Composite Energy Generator", the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present application relates to the field of new energy technology, and in particular to an energy generator. Background Art

[0003] Researchers continue to work on renewable energy research in order to contribute to environmental protection and to explore new avenues in energy supply.

[0004] Rain, a common natural phenomenon, has long been a neglected renewable energy source, generating raindrop energy. Current generators that harvest raindrop energy primarily utilize the principles of induction and contact electrification. These generators typically have a two-layer structure, one composed of an electronegative material and the other of an electropositive material. The electropositive material lies beneath the electronegative material. When raindrops land on the electronegative material, they roll over it, generating contact electrification. This causes the electropositive material to become inductively electrified, thereby converting the raindrop energy into collected electrical energy. However, because raindrops intermittently land on the electronegative material on the generator's surface, the electrical energy that can be converted by the generator's two electrode plates can only be output as alternating current (AC). This necessitates the connection of an additional rectifier to convert the AC power into DC before it can be utilized. Summary of the Invention

[0005] The present application proposes an energy generator to solve the problem that a generator that collects raindrop energy cannot convert alternating current into direct current.

[0006] The present application provides an energy generator, comprising a first electrode plate and a second electrode plate, wherein the first electrode plate covers the upper surface of the second electrode plate, and the first electrode plate is a polymer film having an electronegativity higher than a set threshold, comprising:

[0007] a first semiconductor wafer and a second semiconductor wafer, wherein the upper surfaces of the first semiconductor wafer and the second semiconductor wafer are in contact with the lower surface of the second electrode plate, so that Schottky junctions are formed between the first semiconductor wafer and the second semiconductor wafer and the second electrode plate respectively; and the first semiconductor wafer and the second semiconductor wafer are separated by a set distance;

[0008] Wherein, the second electrode plate is a metal conductor.

[0009] The energy generator in the aforementioned application embodiment disposes a first semiconductor sheet and a second semiconductor sheet below a second electrode plate made of a metallic conductor, thereby forming a Schottky junction between the first and second semiconductor sheets and the second electrode plate. The rectification effect of the Schottky junction converts the AC power collected by the energy generator into DC power, thereby increasing the applicability of the energy generator for collecting raindrop energy and enabling its direct application in a wider range of electrical devices.

[0010] In a possible implementation manner, the resistivity of the first semiconductor wafer and the resistivity of the second semiconductor wafer are both not less than 10 ohm·cm.

[0011] In a possible implementation manner, the energy generator further includes:

[0012] a third electrode plate attached to the lower surface of the first semiconductor wafer;

[0013] The fourth electrode plate is attached to the lower surface of the second semiconductor sheet.

[0014] In a possible implementation manner, the first semiconductor wafer is a p-type semiconductor, and the second semiconductor wafer is an n-type semiconductor.

[0015] In a possible implementation manner, the second electrode plate is a transparent electrode plate, and the Fermi energy level of the second electrode plate is located between the Fermi energy level of the p-type semiconductor and the Fermi energy level of the n-type semiconductor.

[0016] In one possible embodiment, a first adhesion layer is provided between the third electrode plate and the first semiconductor wafer, so that an ohmic contact is formed between the first semiconductor wafer and the first adhesion layer; and a second adhesion layer is provided between the fourth electrode plate and the second semiconductor wafer, so that an ohmic contact is formed between the second semiconductor wafer and the second adhesion layer.

[0017] In a possible implementation manner, the first semiconductor wafer and the second semiconductor wafer are both silicon wafers.

[0018] In a possible implementation manner, the third electrode plate and the fourth electrode plate are both gold electrode plates.

[0019] In a possible implementation manner, the thickness of the first semiconductor wafer and the thickness of the second semiconductor wafer are both not less than 0.5 mm.

[0020] In a possible implementation manner, the energy generator further includes:

[0021] Metal nanowires;

[0022] The metal nanowires are located between the first electrode plate and the second electrode plate; and the coverage of the metal nanowires on the surface of the second electrode plate is any value between 1% and 10%. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 A schematic diagram of the structure of an energy generator provided in an embodiment of the present application;

[0024] Figure 2 A schematic diagram of the structure of a composite energy generator provided in an embodiment of the present application;

[0025] Figure 3 A schematic structural diagram of another energy generator provided in an embodiment of the present application;

[0026] Figure 4 The embodiment of this application provides the corresponding Figure 3 The equivalent circuit diagram of the energy generator shown;

[0027] Figure 5 For the embodiments of this application, use Figure 3 The performance test diagram of the energy generator shown when collecting raindrop energy;

[0028] Figure 6 For the embodiments of this application, use Figure 3 The performance test diagram of the energy generator shown when collecting solar energy;

[0029] Figure 7 For the embodiments of this application, use Figure 3 The performance test diagram of the energy generator when collecting thermal energy is shown;

[0030] Figure 8 For the embodiments of this application, use Figure 3 The performance test diagram shown is of the Zhongneng generator when it collects raindrop energy, solar energy and thermal energy at the same time. DETAILED DESCRIPTION

[0031] To address the problem of the prior art lacking an energy generator capable of converting alternating current (AC) to direct current (DC) when harvesting raindrop energy, the present application proposes an energy generator comprising a first electrode plate and a second electrode plate, wherein the first electrode plate overlies the upper surface of the second electrode plate. A first semiconductor wafer and a second semiconductor wafer are disposed beneath the second electrode plate, such that both the first and second semiconductor wafers contact the second electrode plate to form a Schottky junction. By utilizing the rectifying properties of this Schottky junction, the AC power generated by raindrop energy can be converted into DC power. This allows the energy generator provided in the embodiments of the present application to directly output electrical energy in the form of DC power when harvesting raindrop energy.

[0032] In order to better understand the above technical solution, the technical solution of the present application is described in detail below through the accompanying drawings and specific embodiments. It should be understood that the embodiments of the present application and the specific features in the embodiments are detailed descriptions of the technical solution of the present application, rather than limitations on the technical solution of the present application. In the absence of conflict, the embodiments of the present application and the technical features in the embodiments can be combined with each other.

[0033] The present application proposes an energy generator to solve the problem that a generator that collects raindrop energy cannot convert alternating current into direct current.

[0034] Figure 1 This is a schematic diagram of the structure of an energy generator provided in an embodiment of the present application. Figure 1 As shown, the energy generator 10 includes a first electrode plate 11 and a second electrode plate 12. The first electrode plate 11 is a polymer film with an electronegativity higher than a predetermined threshold. The polymer film can be polytetrafluoroethylene. The second electrode plate 12 is a metal conductor. The first electrode plate 11 covers the upper surface of the second electrode plate 12. A first semiconductor wafer 13 and a second semiconductor wafer 14 are disposed below the second electrode plate 12. The first semiconductor wafer 13 and the second semiconductor wafer 14 are in contact with the second electrode plate 12, thereby forming a Schottky junction 15 between the first semiconductor wafer 13, the second semiconductor wafer 14, and the second electrode plate 12.

[0035] As raindrops intermittently fall on the first electrode plate 11, contact electrification and induction electrification cause the charge on the second electrode plate 12 to transfer back and forth in opposite directions, generating alternating current (AC). Due to the rectifying effect of the Schottky junction 15, this AC power can be converted to DC power for output. When the current passes through the Schottky junction 15 and exits the first semiconductor chip 13 and / or the second semiconductor chip 14, the conversion from AC to DC is complete, and the electrical energy is output as DC power. Therefore, the energy generator 10 of the aforementioned embodiment achieves the goal of optimizing the generator for collecting raindrop energy, avoiding the need for an external A / D converter or A / C converter for rectification.

[0036] In order to prevent the leakage current generated by the Schottky diode corresponding to the Schottky junction 15 from being too large and affecting the output of direct current, in the embodiment of the present application, the resistivity of the first semiconductor chip 13 and the second semiconductor chip 14 are both set to be not less than 10 ohm·cm.

[0037] Figure 2 A schematic diagram of the structure of a composite energy generator provided in an embodiment of the present application; Figure 2As shown, based on the above-mentioned energy generator 10 for collecting raindrop energy, a third electrode plate 21 and a fourth electrode plate 22 are respectively arranged below the first semiconductor wafer 13 and the second semiconductor wafer 14, so that the third electrode plate 21 is attached to the lower surface of the first semiconductor wafer 13, and the fourth electrode plate 22 is attached to the lower surface of the second semiconductor wafer 14, thereby obtaining a composite energy generator 20. In other words, the composite energy generator 20 includes a first electrode plate 11, a second electrode plate 12, a first semiconductor wafer 13, a second semiconductor wafer 14, a third electrode plate 21, and a fourth electrode plate 22. The above-mentioned composite energy generator 20 can complete the conversion and collection of solar energy or thermal energy into electrical energy based on the second electrode plate 12, the third electrode plate 21, and the fourth electrode plate 22. The third electrode plate 21 and the fourth electrode plate 22 can be metal conductor electrode plates; for example, gold electrode plates.

[0038] Furthermore, semiconductors can be divided into p-type semiconductors and n-type semiconductors. In one embodiment of the present application, one of the first semiconductor slice 13 or the second semiconductor slice 14 is set to be a p-type semiconductor, and the other is an n-type semiconductor. Specifically, the majority carriers in the p-type semiconductor are holes, and the majority carriers in the n-type semiconductor are electrons. Therefore, it is necessary to select a material whose Fermi level is between the Fermi level of the p-type semiconductor and the Fermi level of the n-type semiconductor as the second electrode plate 12, so that an electron concentration difference is formed between the p-type semiconductor and the second electrode plate 12, and between the n-type semiconductor and the second electrode plate 12. Therefore, in the embodiment of the present application, if either the first semiconductor slice 13 or the second semiconductor slice 14 is set to be a p-type semiconductor, the other is set to be an n-type semiconductor, so that the direction of the above-mentioned electron concentration difference in the energy generator is consistent.

[0039] In one embodiment provided in the present application, the first semiconductor wafer 13 and the second semiconductor wafer 14 are both silicon wafers, and the second electrode plate 12 is an indium tin oxide electrode plate. Since the majority carriers of p-type silicon are holes, and the indium tin oxide electrode plate contains free electrons, the majority carriers of n-type silicon are electrons. Therefore, an electron concentration difference is formed between the n-type silicon and the second electrode plate 12, and between the second electrode plate 12 and the p-type silicon. Specifically, the electron concentration in n-type silicon is higher than that in the indium tin oxide electrode plate, and the electron concentration in the indium tin oxide electrode plate is higher than that in the p-type silicon.

[0040] Furthermore, since the Fermi level of indium tin oxide is between p-type silicon and n-type silicon, the indium tin oxide electrode plate can form a Fermi level difference with p-type silicon and n-type silicon, respectively, so that electrons are transferred, thereby reducing the above-mentioned electron concentration difference. Specifically, between n-type silicon and the indium tin oxide electrode plate, electrons are transferred from n-type silicon to the indium tin oxide electrode plate, thereby forming a built-in electric field pointing from n-type silicon to the indium tin oxide electrode plate at the interface between n-type silicon and the indium tin oxide electrode plate. Similarly, electron transfer occurs between p-type silicon and the indium tin oxide electrode plate, thereby also generating a built-in electric field pointing from the indium tin oxide electrode plate to the p-type silicon.

[0041] Under the influence of the built-in electric field, electrons move in the same direction. The electron movement path is: after passing through the p-type semiconductor, the indium tin oxide electrode plate, and then flowing through the n-type semiconductor.

[0042] It should be noted that the above-mentioned indium tin oxide electrode plate is a transparent electrode plate. The transparency of the electrode plate ensures that light can penetrate the surface of the indium tin oxide electrode plate and illuminate the junction area of ​​the Schottky junction 15 (i.e., the contact surface between the indium tin oxide electrode plate and the p-type silicon / n-type silicon) to collect and convert light energy. Therefore, when the composite energy generator 20 in the embodiment of the present application also collects solar energy, the material of the second electrode plate 12 includes but is not limited to indium tin oxide, and the material of the second electrode plate 12 can be any transparent metal whose Fermi level is between the p-type semiconductor sheet or the n-type semiconductor sheet.

[0043] The conditions for forming a Schottky junction 15 include contact between a metal and a semiconductor; in particular, a Schottky junction is very likely to form between a noble metal and a semiconductor. To prevent the formation of a new Schottky junction 15 between the third electrode plate 21 and the first semiconductor wafer 13, and between the fourth electrode plate 22 and the second semiconductor wafer 14, which could affect the direction of current flow and prevent the smooth output of electrical energy from the composite energy generator 20, a first adhesion layer can be provided between the first semiconductor wafer 13 and the third electrode plate 21, and a second adhesion layer can be provided between the second semiconductor wafer 14 and the fourth electrode plate 22 to create an ohmic contact. In one embodiment of the present application, the first semiconductor wafer 13 and the second semiconductor wafer 14 are silicon wafers. The first semiconductor wafer 13 is p-type silicon, and the second semiconductor wafer 14 is n-type silicon. Therefore, the first adhesion layer between the third electrode plate 21 and the first semiconductor wafer 13 (i.e., p-type silicon) can be a nickel layer, and the second adhesion layer between the fourth electrode plate 22 and the second semiconductor wafer 14 (i.e., n-type silicon) can be a titanium layer, so that an ohmic contact is formed between the p-type silicon and the nickel layer, and an ohmic contact is formed between the n-type silicon and the titanium layer. The nickel and titanium layers can be deposited using magnetron sputtering, so that the nickel and titanium layers serve as adhesion layers on the p-type silicon and n-type silicon.

[0044] Furthermore, to achieve current collection, metal nanowires may be provided between the first electrode plate 11 and the second electrode plate 12. The coverage of the metal nanowires on the upper surface of the second electrode plate 12 may be between 1% and 10%, preferably 5%.

[0045] Furthermore, when the composite energy generator 20 is used to collect thermal energy, the thickness of the first semiconductor sheet 13 and the second semiconductor sheet 14 can be set to no less than 0.5 mm, so that a significant temperature difference can be formed between the upper and lower surfaces of the first semiconductor sheet 13 and the upper and lower surfaces of the second semiconductor sheet 14. When the second electrode plate 12 is heated, heat is transferred to the upper surfaces of the first and second semiconductor sheets 13, 14, resulting in a temperature difference between the upper and lower surfaces of the first and second semiconductor sheets 13, 14. This is due to the Seebeck effect: majority carriers in a semiconductor migrate from the hot end to the cold end. This potential difference creates a potential difference in a p-type semiconductor, where holes migrate from top to bottom, while electrons migrate from top to bottom in an n-type semiconductor. This potential difference generates opposite charge flows. Therefore, in the composite energy generator 20, electrons also achieve directional movement in the same direction; the electrons migrate from the p-type semiconductor, through the indium tin oxide electrode plate, and then through the n-type semiconductor.

[0046] In fact, in the energy generator 10 and the composite energy generator 20 provided in the embodiment of the present application, the number of semiconductors is not limited to two. The number of semiconductors in the energy generator 10 or the composite energy generator 20 can be expanded according to actual needs and usage conditions to achieve the purpose of improving the energy collection rate of the energy generator 10 or the composite energy generator 20. The following is an explanation of the situation where the composite energy generator 20 includes multiple semiconductors. Please refer to Figure 3 The above-mentioned p-type semiconductor and n-type semiconductor may be regarded as a semiconductor unit, wherein the first semiconductor piece is a p-type semiconductor and the second semiconductor piece is an n-type semiconductor. Figure 3As shown, the energy generator 30 includes a first electrode plate 11, a second electrode 12, a third electrode plate 21, a fourth electrode plate 22, a first semiconductor unit, and a second semiconductor unit. Among them, the first semiconductor unit includes a first silicon wafer 131 (p-type) and a second silicon wafer 141 (n-type); the second semiconductor unit includes a first silicon wafer 132 (p-type) and a second silicon wafer 142 (n-type). The first semiconductor unit and the second semiconductor unit correspond to different second electrode plates 12 respectively; between the first electrode plate 11 and the second electrode plate 12, a metal nanowire 31 for current collection is provided, and the metal nanowire 31 can be a silver nanowire. A nickel layer and a titanium layer (not shown in the figure) are respectively provided between the first silicon wafer (131, 132) and the third electrode plate 21, and between the second silicon wafer (141, 142) and the fourth electrode plate 22 to form an ohmic contact. In order to achieve such Figure 3 The current flow direction is shown by the dotted line. In the embodiment of the present application, the adjacent fourth electrode plate 22 and the third electrode plate 21 are arranged between the first semiconductor unit and the second semiconductor unit, so that the second silicon wafer 141 and the first silicon wafer 132 are connected, thereby forming a structure in which the second electrode plate 12 and the third electrode plate 21 are staggered. Figure 3 The (p-type) first silicon wafer or the (n-type) second silicon wafer in the power generator contacts the lower surface of the second electrode plate 12, forming a Schottky junction. This Schottky junction can be used to collect solar energy and also use the rectification effect to convert the AC power generated by raindrop energy into DC power. The energy generator includes four Schottky junctions (i.e., Schottky diodes). Figure 4 The embodiment of this application provides the corresponding Figure 3 The equivalent circuit diagram of the energy generator. Figure 4 As shown, these four Schottky diodes are connected in series, which corresponds to the energy generator for collecting raindrop energy with two Schottky diodes in series and two diodes in parallel. When the composite energy generator 30 is used to collect thermal energy, the composite energy generator 30 can be equivalent to four Schottky diodes connected in series.

[0047] Figures 5 to 8 Provided in the embodiments of this application, using Figure 3 The energy generator shown in the figure is a performance test diagram when collecting different types of energy. Specifically, Figure 5 The performance test diagram of the energy generator when collecting raindrop energy. Figure 5 As shown, when collecting raindrop energy, the open circuit voltage of the energy generator is 9V and the short circuit current is 0.8μA. Figure 6 The performance test diagram of the energy generator when collecting solar energy is shown in Figure 6. As shown in Figure 6, when collecting solar energy, the open circuit voltage of the energy generator is 0.9V and the short circuit current is 0.9mA. Figure 7 The performance test diagram of the energy generator when collecting thermal energy. Figure 7 As shown, when collecting thermal energy, the open circuit voltage of the energy generator is 0.5mV and the short circuit current is 0.5nA. Figure 8 This is a performance test diagram for collecting raindrop energy, solar energy, and thermal energy at the same time; Figure 8 As shown in FIG, when simultaneously collecting raindrop energy, solar energy, and thermal energy, the open circuit voltage of the energy generator is 9 V and the short circuit current is 0.4 mA. It can be seen that the energy generator can collect solar energy and thermal energy separately or simultaneously in addition to collecting raindrop energy.

[0048] In summary, the energy generator provided in the embodiments of the present application, when collecting raindrop energy, rectifies AC power into DC power through a Schottky junction, thereby improving the applicability of the energy generator and enabling it to directly output DC power. Furthermore, because the energy generator can be used independently to collect raindrop energy, solar energy, or thermal energy, its use is no longer restricted by weather conditions, thereby increasing its utilization rate and effectively boosting its power generation.

[0049] Obviously, those skilled in the art may make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if such changes and modifications fall within the scope of the claims and their equivalents, the present invention is intended to include such changes and modifications.

Claims

1. An energy generator comprising a first electrode plate and a second electrode plate, wherein the first electrode plate covers the upper surface of the second electrode plate, and the first electrode plate is a polymer film having an electronegativity higher than a set threshold, characterized in that: include: a first semiconductor wafer and a second semiconductor wafer, wherein the upper surfaces of the first semiconductor wafer and the second semiconductor wafer are in contact with the lower surface of the second electrode plate, so that Schottky junctions are formed between the first semiconductor wafer and the second semiconductor wafer and the second electrode plate respectively; and the first semiconductor wafer and the second semiconductor wafer are separated by a set distance; Wherein, the second electrode plate is a metal conductor.

2. The energy generator according to claim 1, characterized in that: The resistivity of the first semiconductor slice and the resistivity of the second semiconductor slice are both not less than 10 ohm·cm.

3. The energy generator according to claim 1 or 2, characterized in that: The energy generator further comprises: a third electrode plate attached to the lower surface of the first semiconductor wafer; The fourth electrode plate is attached to the lower surface of the second semiconductor sheet.

4. The energy generator according to claim 3, characterized in that: The first semiconductor piece is a p-type semiconductor, and the second semiconductor piece is an n-type semiconductor.

5. The energy generator according to claim 4, characterized in that: The second electrode plate is a transparent electrode plate, and a Fermi energy level of the second electrode plate is located between a Fermi energy level of the p-type semiconductor and a Fermi energy level of the n-type semiconductor.

6. The energy generator according to claim 4, characterized in that: A first adhesion layer is provided between the third electrode plate and the first semiconductor wafer so that an ohmic contact is formed between the first semiconductor wafer and the first adhesion layer; and a second adhesion layer is provided between the fourth electrode plate and the second semiconductor wafer so that an ohmic contact is formed between the second semiconductor wafer and the second adhesion layer.

7. The energy generator according to claim 4, characterized in that: The first semiconductor wafer and the second semiconductor wafer are both silicon wafers.

8. The energy generator according to claim 7, characterized in that: The third electrode plate and the fourth electrode plate are both gold electrode plates.

9. The energy generator according to any one of claims 1 to 2, 4 to 8, characterized in that: The thickness of the first semiconductor wafer and the thickness of the second semiconductor wafer are both not less than 0.5 mm.

10. The energy generator according to claim 1, characterized in that: The energy generator further comprises: Metal nanowires; The metal nanowires are located between the first electrode plate and the second electrode plate; and the coverage of the metal nanowires on the surface of the second electrode plate is any value between 1% and 10%.

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