Insulated Gate Bipolar Transistor Circuits, Related Application Systems and Manufacturing Methods

Abstract

This invention provides an insulated-gate bipolar transistor (IGBT) circuit, an IGBT application system, and a method for manufacturing the IGBT circuit. The IGBT circuit includes a transistor, an inverter, a first freewheeling diode, a second freewheeling diode, a first transistor, and a second transistor. The IGBT circuit, IGBT application system, and IGBT manufacturing method of this invention allow for the selection and parallel connection of different types of freewheeling diodes and have a wide range of applications.

Description

Technical Field

[0001] This invention relates to the field of insulated gate bipolar transistor (IGBT) technology, and more particularly to an IGBT circuit, an IGBT application system, and a method for manufacturing an IGBT circuit. Background Technology

[0002] Insulated-gate bipolar transistors (IGBTs) are important components in household appliances. IGBTs offer advantages such as low drive power and low saturation voltage. Due to their superior switching performance, they are widely used in white goods, consumer electronics, motor drives, induction heating, wind power generation, and photovoltaics.

[0003] Currently, in related technologies, a single-transistor chip composed of an insulated-gate bipolar transistor (IGBT) generally includes a bipolar transistor and a freewheeling diode. Please refer to [reference needed]. Figure 1 The aforementioned single-transistor chip composed of an insulated-gate bipolar transistor (IGBT) includes a bipolar junction transistor (BJT) T1 and a freewheeling diode (FD). The collector of the BJT T1 serves as the first pin of the single-transistor chip, and the collector of the BJT T1 is connected to the negative terminal of the freewheeling diode (FD). The base of the BJT T1 serves as the second pin of the single-transistor chip. The emitter of the BJT T1 serves as the third pin of the single-transistor chip, and the emitter of the BJT T1 is connected to the positive terminal of the freewheeling diode (FD). That is, the BJT T1 and the freewheeling diode (FD) are connected in parallel.

[0004] However, this single-transistor chip is difficult to meet the needs of some complex application scenarios, especially in current white goods applications. To improve production efficiency and simplify production management, different power range solutions are often compatible on a single motherboard. Common examples include high-frequency and low-frequency chopper circuits and 1HP-3P air conditioner motherboards. IGBT single-transistor devices are among the most common components in these applications. For products with different power ranges, multiple device selections are required for the same location in the solution, increasing the number of material types, adding to factory management complexity, and leading to longer development cycles and higher costs. A key approach to achieving integration, miniaturization, and intelligence is to improve the flexibility of device applications, simplify device selection for developers, and especially solve the problem of freewheeling diode selection. This allows for the free selection of parallel freewheeling diodes based on different power or current specifications, which is a technical problem that needs to be addressed. Summary of the Invention

[0005] The purpose of this invention is to address the shortcomings of existing technologies by providing an insulated gate bipolar transistor (IGBT) circuit that allows for the selection of parallel connection of different types of freewheeling diodes and has a wide range of applications, an IGBT application system, and a method for manufacturing the IGBT circuit.

[0006] To achieve this objective, firstly, the present invention adopts the following technical solution:

[0007] The present invention provides an insulated gate bipolar transistor circuit, the insulated gate bipolar transistor circuit including a transistor, an inverter, a first freewheeling diode, a second freewheeling diode, a first transistor, and a second transistor;

[0008] The collector of the transistor serves as the first pin of the insulated gate bipolar transistor circuit, and the collector of the transistor is connected to the negative terminal of the first freewheeling diode and the negative terminal of the second freewheeling diode, respectively.

[0009] The base of the transistor serves as the second pin of the insulated gate bipolar transistor circuit.

[0010] The emitter of the transistor serves as the third pin of the insulated gate bipolar transistor circuit, and the emitter of the transistor is connected to the source of the first transistor and the source of the second transistor, respectively.

[0011] The positive terminal of the inverter serves as the fourth pin of the insulated gate bipolar transistor circuit, and the positive terminal of the inverter is connected to the gate of the first transistor; the drain of the first transistor is connected to the positive terminal of the first freewheeling diode.

[0012] The negative terminal of the inverter is connected to the gate of the second transistor; the source of the second transistor is connected to the positive terminal of the second freewheeling diode.

[0013] Furthermore, both the first transistor and the second transistor are NMOS transistors.

[0014] Furthermore, the insulated gate bipolar transistor circuit also includes a wiring layer, and the transistor, the inverter, the first freewheeling diode, the second freewheeling diode, the first transistor, and the second transistor are all electrically connected by soldering to the wiring layer.

[0015] Secondly, the present invention also adopts the following technical solution:

[0016] The present invention also provides an insulated gate bipolar transistor (IGBT) application system, the IGBT application system comprising an input signal logic circuit, a driving circuit, an emitter current detection circuit, a diode channel control signal terminal circuit, an inductive load, and the IGBT circuit described above as provided in the present invention.

[0017] The input signal logic circuit is used to receive the PWM control signal from the external circuit main control board, and perform logic operations based on the PWM control signal to generate a logic control signal for controlling the operating switching frequency of the insulated gate bipolar transistor circuit.

[0018] The driving circuit is used to receive the logic control signal and generate a driving signal for driving the insulated gate bipolar transistor circuit according to the logic control signal.

[0019] The emitter current detection circuit is used to detect the operating current of the insulated gate bipolar transistor circuit in real time, so as to feed back to the processor of the external circuit main control board.

[0020] The diode channel control signal terminal circuit is used to output a diode channel control signal to the insulated gate bipolar transistor circuit, so that the transistor in the insulated gate bipolar transistor circuit can be connected in parallel with the first freewheeling diode or the second freewheeling diode.

[0021] The inductive load is used to drive and control the insulated gate bipolar transistor circuit.

[0022] The first pin of the insulated gate bipolar transistor circuit is connected to the input of the inductive load;

[0023] The second pin of the insulated gate bipolar transistor circuit is connected to the output of the driving circuit.

[0024] The third pin of the insulated gate bipolar transistor circuit is connected to the input of the emitter current detection circuit.

[0025] The fourth pin of the insulated gate bipolar transistor circuit is connected to the input of the diode channel control signal circuit.

[0026] Thirdly, the present invention also adopts the following technical solutions:

[0027] The present invention also provides a method for manufacturing an insulated-gate bipolar transistor (IGBT) circuit. This method is applied to an IGBT chip and a driver chip connected to the IGBT chip. The IGBT chip includes the IGBT circuit described above. The method for manufacturing the IGBT circuit includes the following steps:

[0028] Step S1: Install the aluminum substrate inside the tooling box;

[0029] Step S2: Perform plasma cleaning on the tooling box after mounting the aluminum substrate;

[0030] Step S3: Print solder paste onto the aluminum substrate;

[0031] Step S4: The insulated gate bipolar transistor chip is attached to the heat sink after applying solder paste;

[0032] Step S5: Attach the driver chip to the side of the insulated gate bipolar transistor chip away from the heat sink, and together with the insulated gate bipolar transistor chip, form a stacked power device group;

[0033] Step S6: Reflow solder the stacked power device group to the aluminum substrate to fix it, and then inspect the stacked power device group by scanning.

[0034] Step S7: According to the preset finished product wire bonding diagram, the stacked power device group is sequentially subjected to fine aluminum wire welding and coarse aluminum wire welding and bonding to produce a semi-finished product.

[0035] Step S8: Inspect the semi-finished products by scanning according to the preset component wiring diagram;

[0036] Step S9: The semi-finished product is sequentially encapsulated, cured and leveled, and laser-engraved to form the finished product;

[0037] Step S10: Perform a finished product test on the finished product.

[0038] Furthermore, in step S9, the encapsulation is plastic sealing.

[0039] Furthermore, in step S10, the finished product test is an electrical parameter test.

[0040] The beneficial effects of this invention are as follows: By adding a first freewheeling diode and a second freewheeling diode to the insulated-gate bipolar transistor (IGBT) circuit, and adding an inverter with the positive terminal of the inverter serving as the fourth pin of the IGBT circuit, this structure allows for control via an input signal at the fourth pin. This enables the IGBT circuit to select either the first freewheeling diode or the second freewheeling diode to be connected in parallel with the transistor, thereby achieving freewheeling performance with different output requirements. This further solves the problem of freewheeling diode selection, allowing for the free selection of different types of freewheeling diodes to be connected in parallel according to different power or current ratings. Therefore, the IGBT circuit, IGBT application system, and IGBT manufacturing method of this invention have the advantages of allowing for the selection of different types of freewheeling diodes in parallel and a wide range of applications. Attached Figure Description

[0041] Figure 1 It is a circuit schematic diagram of a single-transistor chip composed of an insulated-gate bipolar transistor (IGBT).

[0042] Figure 2 This is a circuit diagram of the insulated gate bipolar transistor circuit of the present invention;

[0043] Figure 3 This is the layout of the insulated gate bipolar transistor circuit of the present invention;

[0044] Figure 4 This is a module structure diagram of the insulated gate bipolar transistor application system of the present invention;

[0045] Figure 5 This is a flowchart of the manufacturing method of the insulated gate bipolar transistor circuit of the present invention. Detailed Implementation

[0046] The present invention will now be described in detail with reference to specific embodiments.

[0047] The present invention provides an insulated gate bipolar transistor circuit 100.

[0048] See Figure 2 , Figure 2 This is a circuit schematic diagram of the insulated gate bipolar transistor circuit 100 of the present invention.

[0049] Specifically, the insulated gate bipolar transistor circuit 100 includes a transistor Q1, an inverter TX, a first freewheeling diode D1, a second freewheeling diode D2, a first transistor Q2, and a second transistor Q3.

[0050] In this embodiment, the transistor Q1 is a bipolar transistor.

[0051] In this embodiment, both the first transistor Q2 and the second transistor Q3 are NMOS transistors. The first transistor Q2 and the second transistor Q3 are used as switching transistors in this embodiment. However, this is not a limitation; the first transistor Q2 and the second transistor Q3 could also be PMOS transistors or other switching devices.

[0052] The circuit connection relationship of the insulated gate bipolar transistor circuit 100 is as follows:

[0053] The collector of transistor Q1 serves as the first pin (Pin1) of the insulated-gate bipolar transistor circuit 100. Furthermore, the collector of transistor Q1 is connected to the negative terminals of the first freewheeling diode D1 and the second freewheeling diode D2.

[0054] The base of the transistor Q1 serves as the second pin, Pin2, of the insulated gate bipolar transistor circuit 100.

[0055] The emitter of transistor Q1 serves as the third pin (Pin3) of the insulated-gate bipolar transistor circuit 100. Furthermore, the emitter of transistor Q1 is connected to the source of the first transistor Q2 and the source of the second transistor Q3, respectively.

[0056] The positive terminal of the inverter TX serves as the fourth pin (Pin4) of the insulated-gate bipolar transistor circuit 100. The positive terminal of the inverter TX is connected to the gate of the first transistor Q2. The drain of the first transistor Q2 is connected to the positive terminal of the first freewheeling diode D1.

[0057] The negative terminal of the inverter TX is connected to the gate of the second transistor Q3. The source of the second transistor Q3 is connected to the positive terminal of the second freewheeling diode D2.

[0058] The circuit working principle of the insulated gate bipolar transistor circuit 100 is as follows:

[0059] The insulated-gate bipolar transistor (IGBT) circuit 100 comprises an inverter TX, a first transistor Q2, and a second transistor Q3, forming a control switch assembly. This assembly is controlled by the input signal at the fourth pin (Pin4), allowing the IGBT circuit 100 to select either the first freewheeling diode D1 connected in parallel with the transistor Q1, or the second freewheeling diode D2 connected in parallel with the transistor Q1. The input signal at the fourth pin (Pin4) freely selects the control channel signal. By using the control switch assembly to connect the freewheeling diodes in parallel, multiple parallel connection methods for the freewheeling diodes can be achieved, maximizing the performance of the IGBT circuit 100. Please refer to Table 1 below:

[0060]

[0061] Table 1. Truth Table for 100 Logic of Insulated Gate Bipolar Transistor Circuit

[0062] See Figure 3 , Figure 3 This is a layout diagram of the insulated gate bipolar transistor (IGBT) circuit 100 of the present invention. In this embodiment, the IGBT circuit 100 further includes a wiring layer 101, an insulating layer 102, and an aluminum substrate 103. The insulating layer 102 is an epoxy resin insulating layer.

[0063] In this embodiment, the aluminum substrate 103 is a printed circuit board made of aluminum alloy material.

[0064] The transistor Q1, inverter TX, first freewheeling diode D1, second freewheeling diode D2, first transistor Q2, and second transistor Q3 are all electrically connected to the trace layer 101 by soldering. After reflow cleaning and drying, electrical connection jumpers are bonded, followed by molding, and finally lead cutting and shaping for electrical parameter testing. The pin terminals of the insulated gate bipolar transistor circuit 100 can be designed as DIP or SOP type for easy SMT installation. Compared with related technologies, the insulated gate bipolar transistor circuit 100, by setting the trace layer 101, insulating layer 102, and aluminum substrate 103, does not require the copper frame architecture of related technologies. This makes the packaging of the insulated gate bipolar transistor circuit 100 of this invention more flexible, effectively improving product versatility and meeting the needs of various customer application scenarios.

[0065] The present invention also provides an insulated gate bipolar transistor application system 200.

[0066] See Figure 4 , Figure 4 This is a module structure diagram of the insulated gate bipolar transistor application system 200 of the present invention.

[0067] Specifically, the insulated gate bipolar transistor application system 200 includes an input signal logic circuit 300, a driving circuit 301, an emitter current detection circuit 302, a diode channel control signal terminal circuit 303, an inductive load 305, and the insulated gate bipolar transistor circuit 100.

[0068] The connection relationships of the insulated gate bipolar transistor application system 200 are as follows:

[0069] The input signal logic circuit 300 is used to receive PWM control signals from the external circuit main control board. It then performs logical operations based on the PWM control signals to generate logic control signals for controlling the operating switching frequency of the insulated gate bipolar transistor circuit 100.

[0070] The driving circuit 301 is used to receive the logic control signal and generate a driving signal for driving the insulated gate bipolar transistor circuit 100 according to the logic control signal.

[0071] The emitter current detection circuit 302 is used to detect the operating current of the insulated gate bipolar transistor circuit 100 in real time, so as to feed back the current to the processor on the external circuit main control board.

[0072] The diode channel control signal terminal circuit 303 is used to output the inverter TX channel control signal to the insulated gate bipolar transistor circuit 100. This allows the transistor Q1 in the insulated gate bipolar transistor circuit 100 to be connected in parallel with either the first freewheeling diode D1 or the second freewheeling diode D2.

[0073] The inductive load 305 is used to drive and control the insulated gate bipolar transistor circuit 100.

[0074] The first pin 1 of the insulated gate bipolar transistor circuit 100 is connected to the input of the inductive load 305.

[0075] The second pin 2 of the insulated gate bipolar transistor circuit 100 is connected to the output of the driving circuit 301.

[0076] The third pin (Pin3) of the insulated gate bipolar transistor circuit 100 is connected to the input of the emitter current detection circuit 302.

[0077] The fourth pin 4 of the insulated gate bipolar transistor circuit 100 is connected to the input of the diode channel control signal terminal circuit 303.

[0078] The working principle of the insulated gate bipolar transistor application system 200 is as follows:

[0079] The function of the input signal logic circuit 300 is as follows: after the processor MCU of the external circuit main control board outputs the PWM control signal, it is sent to the HVIC chip of the drive circuit 301. The HVIC controls the switching action of the insulated gate bipolar transistor circuit 100, thereby controlling the operating switching frequency of the insulated gate bipolar transistor circuit 100.

[0080] The driving circuit 301 is a HIVC control chip or optocoupler driver, which is used to receive the PWM signal of the MUC and perform real-time drive output control on the insulated gate bipolar transistor circuit 100. It can also effectively control the switching speed of the power transistor, making it safer and more reliable.

[0081] The function of the emitter current detection circuit 302 is as follows: it serves as the operating current signal control terminal of the insulated gate bipolar transistor circuit 100. When the insulated gate bipolar transistor circuit 100 is switching on and off, in order to prevent the insulated gate bipolar transistor circuit 100 from being damaged due to overcurrent, it samples the operating current of the real-time drive output and then feeds it back to the processor MCU of the external main control board.

[0082] The function of the diode channel control signal terminal circuit 303 is as follows: When the insulated gate bipolar transistor circuit 100 is working, the user can set high and low control level signals to control it according to their own application needs. The user can freely select the internal freewheeling diode and the transistor to be connected in parallel, thereby achieving the freewheeling function with different performance requirements, which can make the IGBT performance better and more outstanding.

[0083] The inductive load 305 serves as the load control part of the terminal, consuming energy and outputting power when the transistors of the insulated gate bipolar transistor circuit 100 are working, ultimately realizing the drive control function.

[0084] The present invention also provides a method for manufacturing an insulated gate bipolar transistor circuit.

[0085] See Figure 5 , Figure 5 This is a flowchart of the manufacturing method of the insulated gate bipolar transistor circuit of the present invention.

[0086] The present invention provides a method for manufacturing an insulated gate bipolar transistor (IGBT) circuit, applicable to an IGBT chip and a driver chip connected to the IGBT chip.

[0087] The insulated gate bipolar transistor chip includes the insulated gate bipolar transistor circuit 100.

[0088] The method for manufacturing the insulated gate bipolar transistor circuit 100 includes the following steps:

[0089] Step S1: Install the aluminum substrate inside the tooling box.

[0090] In this embodiment, the aluminum substrate is a printed circuit board made of aluminum alloy. An aluminum substrate is a metal-based copper-clad laminate with good heat dissipation. Generally, a single-sided board consists of three layers: a circuit layer (copper foil), an insulating layer, and a metal base layer. High-end applications may use double-sided boards with a structure of a circuit layer, an insulating layer, an aluminum base, another insulating layer, and another circuit layer. Very few applications use multilayer boards, which can be formed by bonding ordinary multilayer boards with an insulating layer and an aluminum base. An IMS aluminum substrate is the same as a PCB, meaning printed circuit board, except that the material of the circuit board is aluminum alloy.

[0091] Step S2: Perform PLASMA plasma cleaning on the tooling box after mounting the aluminum substrate.

[0092] Step S3: Print solder paste onto the aluminum substrate.

[0093] Step S4: The insulated gate bipolar transistor chip is attached to the heat sink after applying solder paste.

[0094] Step S5: Attach the driver chip to the side of the insulated gate bipolar transistor chip away from the heat sink. Together with the insulated gate bipolar transistor chip, they form a stacked power device group.

[0095] Step S6: Reflow solder the stacked power device assembly to the aluminum substrate to fix it. Then, inspect the stacked power device assembly by scanning.

[0096] Step S7: According to the preset finished product wire bonding diagram, the stacked power device group is sequentially subjected to fine aluminum wire welding and coarse aluminum wire welding and bonding to produce a semi-finished product.

[0097] Step S8: Inspect the semi-finished products by scanning them according to the preset wire bonding drawings.

[0098] Step S9: The semi-finished product is sequentially encapsulated, cured and leveled, and laser-engraved to form the finished product.

[0099] In this embodiment, the encapsulation is plastic sealing. However, it is not limited to this; encapsulation with epoxy resin or shaping with other insulating materials are also possible.

[0100] Step S10: Perform a finished product test on the finished product.

[0101] In this embodiment, the finished product test is an electrical parameter test. Of course, this is not the only requirement; the finished product test items for chips or devices can be selected according to product performance and functional requirements, such as reliability testing.

[0102] It should be noted that the transistors, inverters, freewheeling diodes and related chips in the embodiments of the present invention are all commonly used devices and chips in the art. The specific models and performance are selected according to the actual design, and will not be described in detail here.

[0103] The beneficial effects of this invention are as follows: By adding a first freewheeling diode D1 and a second freewheeling diode D2 to the insulated-gate bipolar transistor (IGBT) circuit 100, and adding an inverter TX, with the positive terminal of the inverter TX serving as the fourth pin (Pin4) of the IGBT circuit 100, this structure allows control within the IGBT circuit 100 via an input signal at the fourth pin (Pin4). This enables the IGBT circuit 100 to select either the first freewheeling diode D1 connected in parallel with the transistor Q1, or the second freewheeling diode D2 connected in parallel with the transistor Q1, thereby achieving freewheeling performance requirements for different outputs. This further solves the problem of freewheeling diode selection, allowing for the free selection of different types of freewheeling diodes to be connected in parallel according to different power or current ratings. Therefore, the IGBT circuit 100, the IGBT application system 200, and the IGBT circuit manufacturing method of this invention have the advantages of being able to select different types of freewheeling diodes to be connected in parallel and having a wide range of applications.

[0104] The above description is only a preferred embodiment of the present invention. For those skilled in the art, there will be changes in the specific implementation and application scope based on the ideas of the present invention. The content of this specification should not be construed as a limitation of the present invention.

Claims

1. An insulated-gate bipolar transistor circuit, characterized in that, The insulated gate bipolar transistor circuit includes a transistor, an inverter, a first freewheeling diode, a second freewheeling diode, a first transistor, and a second transistor; The collector of the transistor serves as the first pin of the insulated gate bipolar transistor circuit, and the collector of the transistor is connected to the negative terminal of the first freewheeling diode and the negative terminal of the second freewheeling diode, respectively. The base of the transistor serves as the second pin of the insulated gate bipolar transistor circuit. The emitter of the transistor serves as the third pin of the insulated gate bipolar transistor circuit, and the emitter of the transistor is connected to the source of the first transistor and the source of the second transistor, respectively. The positive terminal of the inverter serves as the fourth pin of the insulated gate bipolar transistor circuit, and the positive terminal of the inverter is connected to the gate of the first transistor; the drain of the first transistor is connected to the positive terminal of the first freewheeling diode. The negative terminal of the inverter is connected to the gate of the second transistor; the drain of the second transistor is connected to the positive terminal of the second freewheeling diode.

2. The insulated gate bipolar transistor circuit according to claim 1, characterized in that, Both the first transistor and the second transistor are NMOS transistors.

3. The insulated gate bipolar transistor circuit according to claim 1, characterized in that, The insulated gate bipolar transistor circuit also includes a wiring layer, and the transistor, the inverter, the first freewheeling diode, the second freewheeling diode, the first transistor, and the second transistor are all electrically connected by soldering to the wiring layer.

4. An application system for an insulated gate bipolar transistor, characterized in that, The insulated gate bipolar transistor application system includes an input signal logic circuit, a driving circuit, an emitter current detection circuit, a diode channel control signal terminal circuit, an inductive load, and an insulated gate bipolar transistor circuit as described in any one of claims 1-3. The input signal logic circuit is used to receive the PWM control signal from the external circuit main control board, and perform logic operations based on the PWM control signal to generate a logic control signal for controlling the operating switching frequency of the insulated gate bipolar transistor circuit. The driving circuit is used to receive the logic control signal and generate a driving signal for driving the insulated gate bipolar transistor circuit according to the logic control signal. The emitter current detection circuit is used to detect the operating current of the insulated gate bipolar transistor circuit in real time, so as to feed back to the processor of the external circuit main control board. The diode channel control signal terminal circuit is used to output a diode channel control signal to the insulated gate bipolar transistor circuit, so that the transistor in the insulated gate bipolar transistor circuit can be connected in parallel with the first freewheeling diode or the second freewheeling diode. The inductive load is used to drive and control the insulated gate bipolar transistor circuit. The first pin of the insulated gate bipolar transistor circuit is connected to the input of the inductive load; The second pin of the insulated gate bipolar transistor circuit is connected to the output of the driving circuit. The third pin of the insulated gate bipolar transistor circuit is connected to the input of the emitter current detection circuit. The fourth pin of the insulated gate bipolar transistor circuit is connected to the input of the diode channel control signal circuit.

5. A method for manufacturing an insulated-gate bipolar transistor circuit, characterized in that, This method is applied to an insulated-gate bipolar transistor (IGBT) chip and a driver chip connected to the IGBT chip, wherein the IGBT chip includes an IGBT circuit as described in any one of claims 1-3, and the method for manufacturing the IGBT circuit includes the following steps: Step S1: Install the aluminum substrate inside the tooling box; Step S2: Perform plasma cleaning on the tooling box after mounting the aluminum substrate; Step S3: Print solder paste onto the aluminum substrate; Step S4: The insulated gate bipolar transistor chip is attached to the heat sink after applying solder paste; Step S5: Attach the driver chip to the side of the insulated gate bipolar transistor chip away from the heat sink, and together with the insulated gate bipolar transistor chip, form a stacked power device group; Step S6: Reflow solder the stacked power device group to the aluminum substrate to fix it, and then inspect the stacked power device group by scanning. Step S7: According to the preset finished product wire bonding diagram, the stacked power device group is sequentially subjected to fine aluminum wire welding and coarse aluminum wire welding and bonding to produce a semi-finished product. Step S8: Inspect the semi-finished products by scanning according to the preset component wiring diagram; Step S9: The semi-finished product is sequentially encapsulated, cured and leveled, and laser-engraved to form the finished product; Step S10: Perform a finished product test on the finished product.

6. The method for manufacturing an insulated gate bipolar transistor circuit according to claim 5, characterized in that, The aluminum substrate is a printed circuit board made of aluminum alloy material.

7. The method for manufacturing an insulated-gate bipolar transistor circuit according to claim 5, characterized in that, In step S9, the packaging is plastic sealing.

8. The method for manufacturing an insulated-gate bipolar transistor circuit according to claim 5, characterized in that, In step S10, the finished product test is an electrical parameter test.

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