On-chip broadband multi-light source system

Abstract

This invention provides an on-chip broadband multi-source system based on silicon carbide, implemented using silicon-based silicon nitride waveguides. It utilizes third-order nonlinear optical effects, primarily degenerate four-wave mixing, to generate an optical frequency comb; and employs self-phase modulation and soliton splitting effects to generate a supercontinuum. By adjusting the voltage of the optical switch module, selective generation of the optical frequency comb or supercontinuum source can be achieved. It can generate optical frequency combs or broadband supercontinuums from visible light to mid-infrared at different frequency ranges, or simultaneously generate both, offering the advantage of multi-source output. This system is integrated onto a silicon-based chip, facilitating large-scale production and offering advantages such as small size, high flexibility, simple structure, and compatibility with other systems.

Description

Technical Field

[0001] This invention belongs to the field of microwave photonics technology and relates to an on-chip broadband multi-source system based on silicon carbide. Background Technology

[0002] The mid-infrared band (wavelength 2–20 μm) not only contains numerous important characteristic vibrational absorption peaks of molecular chemical bonds, but also covers two "atmospheric transport windows" at 3–5 μm and 8–13 μm, making it a crucial spectral band available for human use. Mid-infrared supercontinuum light sources combine the high brightness and high coherence of laser sources with the broad spectral characteristics of conventional light sources, making them the most promising light source in the infrared band. They have significant applications in optical coherence tomography, biomedicine, precise measurement of optical frequencies, high-resolution microscopy, early cancer diagnosis, high-precision optical frequency measurement, and aerospace. Integrated chip design is a key trend in the development of mid-infrared supercontinuum light sources. In recent years, domestic and international research institutions have intensified their efforts in developing miniature mid-infrared supercontinuum light sources with small size and low power consumption. Therefore, achieving on-chip integrated mid-infrared supercontinuum light sources has considerable economic and social significance.

[0003] In addition, after more than 20 years of research and exploration, optical frequency combs have been widely used in spectroscopy, microwave photonics, metrology, lidar, optical communication, and optical arbitrary waveform generation.

[0004] To generate supercontinuum and optical frequency combs, existing solutions typically employ silicon-based silicon nitride waveguides, utilizing third-order nonlinear optical effects, primarily degenerate four-wave mixing, to generate the optical frequency comb; and employing effects such as self-phase modulation and soliton splitting to generate the supercontinuum. However, these solutions suffer from the following problems:

[0005] (1) The optical frequency comb generated by mode-locked laser is not easy to change in terms of spectral spacing and has a large linewidth; the optical frequency comb generated by photoelectric modulation method has a narrower bandwidth and fewer comb lines.

[0006] (2) At present, a single light source generated by a system cannot meet the needs of multiple light sources under various usage conditions. For example, only a single optical frequency comb is obtained, and the spectral width is narrow.

[0007] (3) Some existing solutions use silicon nitride waveguides with a nonlinear coefficient of only 2.5 × 10⁻⁶. -19 m 2 W -1 It is four orders of magnitude smaller than silicon carbide, and typically requires centimeter-scale lengths to achieve supercontinuum broadening, which is not conducive to high system integration.

[0008] In the prior art, CN206116454U and CN206332054U disclose an infrared LED light source component based on an aluminum silicon carbide heat dissipation substrate and a COB-packaged infrared LED light source component based on an aluminum silicon carbide heat dissipation substrate. However, the above solutions only utilize the material properties of aluminum silicon carbide itself and do not achieve true integration. They do not realize an on-chip broadband multi-light source system of silicon carbide, nor do they solve the problem of large size of the single optical frequency comb and supercontinuum generation system obtained in the prior art. Summary of the Invention

[0009] To address the aforementioned shortcomings, the present invention aims to provide an on-chip broadband multi-source system to solve the problem of large size in existing single optical frequency combs and supercontinuum generation systems.

[0010] To achieve the above effects, the present invention provides an on-chip broadband multi-source system, comprising a silicon carbide layer, a silicon nitride layer, and a silicon substrate. The system mainly includes a laser source (1), an optical switch module (2) for controlling optical splitting, an optical frequency comb source module (3) for generating different frequency intervals, and a supercontinuum module (4) for generating visible to mid-infrared supercontinuum. The optical switch module (2) and the optical frequency comb source module (3) are respectively integrated with multiple electrodes (2-1, 2-2, 2-3) and (3-7, 3-8). The optical switch module (2) contains silicon carbide waveguides (2-4, 2-5), and the optical frequency comb source module (3) contains... The supercontinuum module (4) is equipped with silicon carbide waveguides (3-3, 3-4, 3-5, 3-6), and the supercontinuum module (4) is equipped with silicon carbide waveguide (4-1). The optical frequency comb light source module (3) is also equipped with multiple micro-ring resonators (3-1, 3-2). The silicon carbide waveguides (2-4, 3-4, 3-5) and silicon carbide waveguides (2-5, 4-1) are designed as an integrated unit. The laser light source (1) enters the optical switch module (2) through end face coupling. The applied voltage on the waveguide arm changes the refractive index of the waveguide material and controls the phase difference between the two arms. The interference effect allows the optical path to selectively enter the optical frequency comb light source module (3) and the supercontinuum module (4).

[0011] Preferably, the optical switch module (2), the optical frequency comb light source module (3), and the supercontinuum module (4) are integrated on the silicon carbide layer.

[0012] Preferably, the first electrode (2-1), the second electrode (2-2), and the third electrode (2-3) are arranged in parallel, a first silicon carbide double waveguide (2-4) is arranged between the first electrode (2-1) and the second electrode (2-2), and a first silicon carbide double waveguide (2-5) is arranged between the second electrode (2-2) and the third electrode (2-3).

[0013] Preferably, the first electrode (2-1) and the third electrode (2-3) are used to connect to the positive terminal of the power supply, and the second electrode (2-2) is used to connect to the negative terminal of the power supply.

[0014] Preferably, the distance between the first resonant cavity (3-1) and the first resonant cavity (3-2) of each microring and the silicon carbide waveguide (3-3, 3-4, 3-5, 3-6) is a predetermined distance.

[0015] Preferably, the setting range of the above-mentioned distance is 200-600nm.

[0016] Preferably, the silicon carbide layer, silicon nitride layer, and silicon substrate are arranged sequentially from top to bottom, with the height of the silicon substrate being greater than the height of the silicon nitride layer, and the height of the silicon nitride layer being greater than the height of the silicon carbide layer.

[0017] Preferably, the height of the silicon nitride layer is more than 100 times the height of the silicon carbide layer.

[0018] Preferably, the refractive index of the silicon substrate is greater than that of the silicon carbide layer, and the refractive index of the silicon carbide layer is greater than that of the silicon nitride layer.

[0019] Preferably, the height of each component in the silicon carbide layer is in the range of 0.4-1.2 μm.

[0020] Preferably, the height of the silicon substrate is 500 μm; the height of the silicon nitride layer ranges from 2 to 4 μm.

[0021] Preferably, the power supply voltage applied between the first electrode (2-1) and the second electrode (2-2), the second electrode (2-2) and the third electrode (2-3), the fourth electrode (3-7) and the fifth electrode (3-8) is in the range of 0 to 30V.

[0022] This invention provides a method for generating optical frequency combs based on the above-described on-chip broadband multi-source system. In the optical frequency comb light source module (3), the micro-ring resonator (3-1, 3-2) is used to generate an optical frequency comb based on the third-order nonlinear optical effect of silicon carbide. Then, the optical frequency comb generated in the micro-ring resonator (3-2, 3-3) is coupled into the silicon carbide waveguide (3-3, 3-6) through evanescent field coupling to obtain a series of optical frequency combs with different resonant spacings.

[0023] Preferably, a broadband supercontinuum from visible light to mid-infrared is generated in the supercontinuum module (4), and the light source is output by silicon carbide waveguides (3-3, 3-6, 4-1).

[0024] The present invention provides a method for generating an optical frequency comb based on the above-described on-chip broadband multi-source system. In the optical frequency comb light source module (3), different voltages are applied to the fourth electrode (3-7) and the fifth electrode (3-8) on the first micro-ring resonator (3-1) to change the frequency spacing of the output optical frequency comb and generate optical frequency combs with different frequency spacings.

[0025] Preferably, the voltage applied to the microring resonant cavity by the above method changes the refractive index of the silicon carbide material, thereby generating optical frequency combs with different frequency spacings through the third-order nonlinear optical effect of silicon carbide.

[0026] This system utilizes an optical switch module to controllably split and adjust the input light. The latter two modules can simultaneously generate an ultra-wideband supercontinuum covering the visible to mid-infrared spectrum and optical frequency combs with different frequency intervals, or generate a single light source of either. By adjusting the voltage of the optical switch module, selective generation of optical frequency combs or supercontinuum light sources can be achieved. It can generate optical frequency combs or broadband supercontinuum light from the visible to mid-infrared spectrum at different frequency intervals, or simultaneously generate both, offering the advantage of multi-source output. Furthermore, this system is integrated onto a silicon-based chip, facilitating large-scale production in actual manufacturing. It boasts advantages such as small size, high flexibility, simple structure, and easy compatibility with other systems. Attached Figure Description

[0027] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments of the present invention will be briefly introduced below. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0028] Figure 1 A schematic diagram of the waveguide structure of the present invention is shown;

[0029] Figure 2 This diagram illustrates a structural schematic of an embodiment of the on-chip broadband multi-source system based on silicon carbide according to the present invention.

[0030] Figure 3 A schematic diagram of another embodiment of the silicon carbide-based on-chip broadband multi-source system of the present invention is shown.

[0031] The diagram is labeled as follows: 1-Laser source; 2-Optical switch module; 3-Optical frequency comb source module; 4-Supercontinuum module; 2-1-First electrode; 2-2-Second electrode; 2-3-Third electrode; 2-4-First silicon carbide waveguide; 2-5-Second silicon carbide waveguide; 3-1-First microring resonator; 3-2-Second microring resonator; 3-3-Third silicon carbide waveguide; 3-4-Fourth silicon carbide waveguide; 3-5-Fifth silicon carbide waveguide; 3-6-Sixth silicon carbide waveguide; 3-7-Fourth electrode; 3-8-Fifth electrode; 4-1-Seventh silicon carbide waveguide. Detailed Implementation

[0032] The features and exemplary embodiments of various aspects of the present invention will now be described in detail. To make the objectives, technical solutions, and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only configured to explain the present invention and are not configured to limit the present invention. For those skilled in the art, the present invention can be practiced without some of these specific details. The following description of the embodiments is merely intended to provide a better understanding of the present invention by illustrating examples of the invention.

[0033] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes said element.

[0034] like Figure 1 As shown, this invention provides a waveguide structure embodiment for an on-chip broadband multi-source system, comprising: a silicon carbide layer, a silicon nitride layer, and a silicon bottom layer, arranged sequentially from top to bottom, with the silicon carbide layer at the top and the silicon bottom layer at the bottom, and a silicon nitride layer sandwiched between the silicon carbide layer and the silicon bottom layer. The height of the silicon bottom layer is greater than the height of the silicon nitride layer, and the height of the silicon nitride layer is greater than the height of the silicon carbide layer.

[0035] In some embodiments, the height of the silicon nitride layer is much greater than the height of the silicon carbide layer, preferably the height of the silicon nitride layer is more than 100 times the height of the silicon carbide layer.

[0036] The refractive indices of the silicon carbide layer, silicon nitride layer, and silicon substrate are n1, n2, and n3, respectively. The refractive index n3 of the silicon substrate is greater than the refractive index n1 of the silicon carbide layer, and the refractive index n1 of the silicon carbide layer is greater than the refractive index n2 of the silicon nitride layer, i.e., n3>n1>n2.

[0037] In some embodiments, the height of each component in the silicon carbide layer ranges from 0.4 to 1.2 μm.

[0038] In some embodiments, the height of the silicon substrate is 500 μm.

[0039] In some embodiments, the height of the silicon nitride layer ranges from 2 to 4 μm.

[0040] In some embodiments, the silicon carbide layer includes: an optical switch module 2 for controlling optical splitting, a supercontinuum module (heterogeneous integrated silicon carbide waveguide module) for generating visible to mid-infrared supercontinuum, and an optical frequency comb light source module 3 for generating different frequency spacings.

[0041] like Figure 2 The diagram illustrates an embodiment of an on-chip broadband multi-source system based on silicon carbide and a frequency comb generator. The system comprises a silicon carbide layer, a silicon nitride layer, and a silicon substrate. The system mainly includes a laser source 1, an optical switch module 2 for controlling optical splitting, an optical frequency comb source module 3 for generating optical frequency combs with different frequency intervals, and a supercontinuum module 4 for generating visible to mid-infrared supercontinuum. The optical switch module 2 and the optical frequency comb source module 3 each integrate multiple electrodes: a first electrode 2-1, a second electrode 2-2, and a third electrode 2-3. The optical switch module 2 contains a first silicon carbide waveguide 2-4 and a second silicon carbide waveguide 2-5. The optical frequency comb light source module 3 includes silicon waveguide 2-5, and is equipped with a third silicon carbide waveguide 3-3, a fourth silicon carbide waveguide 3-4, a fifth silicon carbide waveguide 3-5, and a sixth silicon carbide waveguide 3-6. The supercontinuum module 4 includes a seventh silicon carbide waveguide 4-1. The optical frequency comb light source module 3 is also equipped with multiple micro-ring resonators, including a first micro-ring resonator 3-1 and a second micro-ring resonator 3-2. The first silicon carbide waveguide 2-4, the fourth silicon carbide waveguide 3-4, the fifth silicon carbide waveguide 3-5, the second silicon carbide waveguide 2-5, and the seventh silicon carbide waveguide 4-1 are all designed as an integrated unit.

[0042] The laser source 1 is coupled into the optical switch module 2 via end-face coupling. An applied voltage on the waveguide arm changes the refractive index of the waveguide material, controlling the phase difference between the two arms. Interference effects allow the optical path to selectively enter the optical frequency comb source module 3 and the supercontinuum module 4. The first electrode 2-1, the second electrode 2-2, and the third electrode 2-3 are arranged side-by-side. A first silicon carbide double waveguide 2-4 is positioned between the first electrode 2-1 and the second electrode 2-2, and a first silicon carbide double waveguide 2-5 is positioned between the second electrode 2-2 and the third electrode 2-3. The first electrode 2-1 and the third electrode 2-3 are used to connect to the positive terminal of the power supply, and the second electrode 2-2 is used to connect to the negative terminal of the power supply.

[0043] The distances between the first resonant cavities 3-1 and 3-2 and the third, fourth, fifth, and sixth silicon carbide waveguides 3-3, 3-4, 3-5, and 3-6 are set distances. The set distance range is 200-600 nm.

[0044] The power supply voltage applied between the first electrode 2-1 and the second electrode 2-2, and between the second electrode 2-2 and the third electrode 2-3, is in the range of 0 to 30V.

[0045] Laser source 1 is coupled into optical switch module 2 via end face coupling. The applied voltage on the waveguide arm can change the refractive index of the waveguide material, thereby controlling the phase difference between the two arms. The interference effect allows the optical path to selectively enter optical frequency comb source module 3 and supercontinuum module 4. In optical frequency comb source module 3, the first micro-ring resonator 3-1 and the second micro-ring resonator 3-2 are used to generate optical frequency combs based on the third-order nonlinear optical effect of silicon carbide, mainly degenerate four-wave mixing. Then, through evanescent field coupling, the optical frequency combs generated in the first micro-ring resonator 3-1 and the second micro-ring resonator 3-2 are coupled into the third silicon carbide waveguide 3-3 and the sixth silicon carbide waveguide 3-6 to obtain a series of optical frequency combs with different resonant spacings. In supercontinuum module 4, a broadband supercontinuum from visible light to mid-infrared is generated using effects such as self-phase modulation and soliton splitting. Finally, the light source is output from the third silicon carbide waveguide 3-3, the sixth silicon carbide waveguide 3-6, and the seventh silicon carbide waveguide 4-1.

[0046] like Figure 3The diagram illustrates an on-chip broadband multi-source system based on silicon carbide and another embodiment of generating an optical frequency comb. The system includes a silicon carbide layer, a silicon nitride layer, and a silicon substrate. The system mainly comprises a laser source 1, an optical switch module 2 for controlling optical splitting, an optical frequency comb source module 3 for generating optical frequency combs with different frequency intervals, and a supercontinuum module 4 for generating a supercontinuum spectrum from visible light to mid-infrared. The optical switch module 2 and the optical frequency comb source module 3 each integrate multiple electrodes: a first electrode 2-1, a second electrode 2-2, a third electrode 2-3, a fourth electrode 3-7, and a fifth electrode 3-8. A first silicon carbide layer is disposed within the optical switch module 2. Waveguide 2-4, second silicon carbide waveguide 2-5, the optical frequency comb light source module 3 is provided with third silicon carbide waveguide 3-3, fourth silicon carbide waveguide 3-4, fifth silicon carbide waveguide 3-5, and sixth silicon carbide waveguide 3-6, the supercontinuum module 4 is provided with seventh silicon carbide waveguide 4-1, the optical frequency comb light source module 3 is also provided with multiple micro-ring resonators, first micro-ring resonator 3-1, second micro-ring resonator 3-2, the first silicon carbide waveguide 2-4, fourth silicon carbide waveguide 3-4, fifth silicon carbide waveguide 3-5, second silicon carbide waveguide 2-5, and seventh silicon carbide waveguide 4-1 are all designed as an integrated unit.

[0047] The laser source 1 is coupled into the optical switch module 2 via end-face coupling. An applied voltage on the waveguide arm changes the refractive index of the waveguide material, controlling the phase difference between the two arms. Interference effects allow the optical path to selectively enter the optical frequency comb source module 3 and the supercontinuum module 4. The first electrode 2-1, the second electrode 2-2, and the third electrode 2-3 are arranged side-by-side. A first silicon carbide double waveguide 2-4 is positioned between the first electrode 2-1 and the second electrode 2-2, and a first silicon carbide double waveguide 2-5 is positioned between the second electrode 2-2 and the third electrode 2-3. The first electrode 2-1 and the third electrode 2-3 are used to connect to the positive terminal of the power supply, and the second electrode 2-2 is used to connect to the negative terminal of the power supply.

[0048] The distances between the first resonant cavities 3-1 and 3-2 and the third, fourth, fifth, and sixth silicon carbide waveguides 3-3, 3-4, 3-5, and 3-6 are set distances. The set distance range is 200-600 nm.

[0049] A fourth electrode 3-7 and a fifth electrode 3-8 are also disposed between the third silicon carbide waveguide 3-3 and the fourth silicon carbide waveguide 3-4. The power supply voltage range applied between the first electrode 2-1 and the second electrode 2-2, the second electrode 2-2 and the third electrode 2-3, and the fourth electrode 3-7 and the fifth electrode 3-8 is 0 to 30V.

[0050] Laser source 1 enters optical switch module 2 via end-face coupling. An applied voltage on the waveguide arm changes the refractive index of the waveguide material, thereby controlling the phase difference between the two arms. Utilizing interference effects, the optical path can selectively enter optical frequency comb source module 3 and supercontinuum module 4. In optical frequency comb source module 3, applying different voltages to the fourth electrode 3-7 and fifth electrode 3-8 on the first microring resonator 3-1 changes the frequency spacing of the output optical frequency comb. The principle is that the voltage applied to the microring resonator changes the refractive index of the silicon carbide material, and then, through the third-order nonlinear optical effect of silicon carbide, mainly degenerate four-wave mixing, optical frequency combs with different frequency spacings are generated.

[0051] Compared with the prior art, the present invention has the following advantages:

[0052] First, silicon carbide materials have a high refractive index and a nonlinear coefficient of 5 × 10⁻⁶. -15 m 2 W -1 It is four orders of magnitude higher than silicon nitride (and has a smaller waveguide length to generate supercontinuum).

[0053] Secondly, silicon carbide has good thermal stability and a high laser damage threshold (it can withstand higher laser power, which is beneficial for wider supercontinuum broadening and frequency combing), and silicon carbide has high transmittance in the visible and mid-infrared bands of 0.37-5.6μm.

[0054] Secondly, silicon carbide has a high electro-optic coefficient and a higher saturated electron mobility, resulting in faster electro-optic modulation speeds in optical switch modules and micro-ring resonators.

[0055] Finally, by using three silicon carbide structural modules to process the input light, an ultrawideband supercontinuum covering the visible to mid-infrared spectrum and optical frequency combs with different frequency intervals can be generated simultaneously. It has the advantages of tunable multi-source output, wide spectrum, simple structure, and easy compatibility with other systems.

[0056] For ease of description, the above devices are described separately by function as various units. Of course, in implementing this application, the functions of each unit can be implemented in one or more software and / or hardware.

[0057] Those skilled in the art will understand that embodiments of the present invention can be provided as methods, systems, or computer program products. Therefore, the present invention can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the present invention can take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0058] This invention is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, generate instructions for implementing the flowchart illustrations and / or block diagrams. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0059] This application can be described in the general context of computer-executable instructions, such as program modules, that are executed by a computer. Generally, program modules include routines, programs, objects, components, data structures, etc., that perform a specific task or implement a specific abstract data type. This application can also be practiced in distributed computing environments where tasks are performed by remote processing devices connected via a communication network. In distributed computing environments, program modules can reside in local and remote computer storage media, including storage devices.

[0060] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0061] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0062] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.

[0063] Memory may include non-persistent storage in computer-readable media, such as random access memory (RAM) and / or non-volatile memory, such as read-only memory (ROM) or flash RAM. Memory is an example of computer-readable media.

[0064] Computer-readable media includes both permanent and non-permanent, removable and non-removable media that can store information using any method or technology. Information can be computer-readable instructions, data structures, modules of programs, or other data. Examples of computer storage media include, but are not limited to, phase-change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technologies, CD-ROM, digital versatile optical disc (DVD) or other optical storage, magnetic tape, magnetic magnetic disk storage or other magnetic storage devices, or any other non-transferable medium that can be used to store information accessible by a computing device. As defined herein, computer-readable media does not include transient computer-readable media, such as modulated data signals and carrier waves.

[0065] It should also be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0066] The various embodiments in this specification are described in a progressive manner. Similar or identical parts between embodiments can be referred to interchangeably. Each embodiment focuses on describing the differences from other embodiments. In particular, the system embodiments are basically similar to the method embodiments, so the description is relatively simple; relevant parts can be referred to the descriptions in the method embodiments.

[0067] The above description is merely an embodiment of this application and is not intended to limit the scope of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of the claims of this application.

Claims

1. A wide spectrum multi-light source system on a chip, comprising a silicon carbide layer, a silicon nitride layer and a silicon bottom layer, characterized in that: The system comprises a laser light source (1), an optical switch module (2) for regulating optical branching, an optical frequency comb light source module (3) for generating different frequency intervals, and a supercontinuum spectrum module (4) for generating visible light to mid-infrared supercontinuum spectrum, the optical switch module (2) is integrated with a first electrode (2-1), a second electrode (2-2) and a third electrode (2-3), the optical frequency comb light source module (3) is integrated with a fourth electrode (3-7) and a fifth electrode (3-8), the optical switch module (2) is provided with a first silicon carbide waveguide (2-4) and a second silicon carbide waveguide (2-5), the optical frequency comb light source module (3) is provided with a third silicon carbide waveguide (3-3), a fourth silicon carbide waveguide (3-4), a fifth silicon carbide waveguide (3-5) and a sixth silicon carbide waveguide (3-6), the supercontinuum spectrum module (4) is provided with a seventh silicon carbide waveguide (4-1), the optical frequency comb light source module (3) is further provided with a first micro-ring resonator (3-1) and a second micro-ring resonator (3-2), the first silicon carbide waveguide (2-4), the fourth silicon carbide waveguide (3-4), the fifth silicon carbide waveguide (3-5), the second silicon carbide waveguide (2-5) and the seventh silicon carbide waveguide (4-1) are integrally designed, the laser light source (1) enters the optical switch module (2) through end face coupling, an external voltage on the waveguide arm changes the refractive index of the waveguide material, controls the phase difference of the two arms, and uses interference effect to make the optical path selectively enter the optical frequency comb light source module (3) and the supercontinuum spectrum module (4); the optical switch module (2), the optical frequency comb light source module (3) and the supercontinuum spectrum module (4) are integrated in a silicon carbide layer; the distance between the first micro-ring resonator (3-1), the second micro-ring resonator (3-2) and the third silicon carbide waveguide (3-3), the fourth silicon carbide waveguide (3-4), the fifth silicon carbide waveguide (3-5) and the sixth silicon carbide waveguide (3-6) is a set distance, and the set distance is set to be in the range of 200-600nm; the silicon carbide layer, the silicon nitride layer and the silicon bottom layer are sequentially arranged from top to bottom, the height of the silicon bottom layer is greater than the height of the silicon nitride layer, and the height of the silicon nitride layer is more than 100 times the height of the silicon carbide layer; the power supply voltage applied between the first electrode (2-1) and the second electrode (2-2), the second electrode (2-2) and the third electrode (2-3), and the fourth electrode (3-7) and the fifth electrode (3-8) is in the range of 0~30V.

2. The on-chip broadband multi-light source system of claim 1, wherein, The first electrode (2-1), the second electrode (2-2) and the third electrode (2-3) are arranged side by side, the first silicon carbide waveguide (2-4) is arranged between the first electrode (2-1) and the second electrode (2-2), and the second silicon carbide waveguide (2-5) is arranged between the second electrode (2-2) and the third electrode (2-3).

3. The on-chip broadband multi-light source system of claim 1, wherein, The first electrode (2-1) and the third electrode (2-3) are used for connecting the positive electrode of the power supply, and the second electrode (2-2) is used for connecting the negative electrode of the power supply.

4. The on-chip broadband multi-light source system of claim 1, wherein, The refractive index of the silicon bottom layer is greater than that of the silicon carbide layer, and the refractive index of the silicon carbide layer is greater than that of the silicon nitride layer.

5. The on-chip broadband multi-light-source system of claim 1, wherein, The height of each part in the silicon carbide layer ranges from 0.4 to 1.2 microns.

6. The on-chip broad spectrum multi-light source system of claim 1, wherein, The height of the silicon bottom layer is 500 microns; the height of the silicon nitride layer ranges from 2 to 4 microns.

7. A method of generating an optical frequency comb based on the on-chip broadband multi-light source system according to any one of claims 1-6, characterized in that, In the optical frequency comb light source module (3), the first micro-ring resonator (3-1) and the second micro-ring resonator (3-2) are used to generate an optical frequency comb according to the third-order nonlinear optical effect of silicon carbide, and then the optical frequency comb generated in the first micro-ring resonator (3-1) and the second micro-ring resonator (3-2) is coupled into the third silicon carbide waveguide (3-3) and the sixth silicon carbide waveguide (3-6) through evanescent field coupling, to obtain a series of optical frequency combs with different resonance spacings; a broadband supercontinuum from visible light to mid-infrared is generated in the supercontinuum module (4), and the output light source is output from the third silicon carbide waveguide (3-3), the sixth silicon carbide waveguide (3-6), and the seventh silicon carbide waveguide (4-1); in the optical frequency comb light source module (3), different voltages are applied to the fourth electrode (3-7) and the fifth electrode (3-8) on the first micro-ring resonator (3-1) to change the frequency spacing of the output optical frequency comb, thereby generating optical frequency combs with different frequency spacings; the voltages applied to the first micro-ring resonator (3-1) and the second micro-ring resonator (3-2) change the refractive index of the silicon carbide material, and then through the third-order nonlinear optical effect of silicon carbide, optical frequency combs with different frequency spacings are generated.

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