Device for generating dielectric barrier discharge and method for treating an object to be activated

Abstract

The invention relates to a device for generating dielectric barrier discharges for treating an object (1) to be activated with non-thermal atmospheric pressure plasmas, comprising a dielectric action chamber (2) having walls (3) composed of a dielectric material and enclosing an action space (4), wherein on the outer side (5) of the walls (3) facing away from the action space (4) metallization structures (6) are applied, wherein the action space (4) is an open space, and a high-voltage source (9) designed to load high voltage at the metallization structures (6) or at the object (1) to be activated when the object (1) to be activated is in the action space (4). According to another aspect, the invention relates to a method for treating an object (1) to be activated with non-thermal atmospheric pressure plasmas.

Description

TECHNICAL FIELD

[0001] The invention relates to a device for generating dielectric barrier discharges for treating an object to be activated with non-thermal atmospheric pressure plasmas and to a method for treating an object to be activated with non-thermal atmospheric pressure plasmas. BACKGROUND

[0002] The object to be activated can for example be an implant which is intended to be placed in a human or animal body. But it can also relate to other objects in which a hydrophilization of the surface is desired.

[0003] It is known that for implants in the dental field for example, if the implant is hydrophilic, the healing time is significantly shortened. Additionally, a hydrophilic implant has significantly improved stability during the healing process and better growth properties (osseointegration) compared to a hydrophobic implant. The implant is usually composed of a material with a hydrophilic surface, for example titanium, for example titanium of grade 4, or zirconium oxide. However, the surface of the implant can become hydrophobic due to organic dirt. This organic dirt can for example be produced during the manufacture or storage of the implant. What should be achieved by the hydrophilization of the surface is the replacement of the hydrocarbon groups which are produced at the surface due to the organic dirt by hydrophilic hydroxyl groups. Since such a hydrophilization is not permanently stable at air, the hydrophilization should be carried out shortly before the implant is placed. It is advantageous here that the hydrophilization can be carried out within a short time in order to change the work process as little as possible when the implant is placed.

[0004] A method for hydrophilizing implants is known from WO 2015 / 087326 A1 in which a plasma is ignited in a completely closed container or in a package in which the implant is delivered. After the plasma process the container is opened and the implant is transplanted into the ecological environment. Associated with high outlay for the manufacturer of implants is the development, approval and manufacture of a package or container which is sterile, sealed and compatible with a plasma generator. Only implants from manufacturers who use such a package are compatible with the device. As a result, the device cannot be used for every arbitrary implant. SUMMARY

[0005] It is now the task of the invention to specify an improved device for plasma treatment of an object to be activated which for example does not require a special packaging of the object to be activated. It is a further task to specify an improved method for plasma treatment.

[0006] The task is solved by a device according to the invention and a method according to the invention.

[0007] An apparatus for generating dielectric barrier discharges is proposed, which is used for treating objects to be activated with non-thermal atmospheric pressure plasmas. The apparatus has a dielectric action chamber and a high-voltage source. The dielectric action chamber has walls composed of a dielectric material, which enclose an action space, wherein a metallization structure is applied on the outer side of the walls facing away from the action space. The action space is here an open space. The high-voltage source is designed to load high voltage at the metallization structure or at the objects to be activated.

[0008] As an "open space" here can mean a non-encapsulated or non-enclosed space. An open space can be distinguished in that gas, for example air, can flow out of the space and gas, for example air, can flow into the space from the surroundings. As an open space can mean a space which is not hermetically enclosed by a package or a container.

[0009] The apparatus can carry out a plasma treatment at each object, the size of which is designed such that it can be inserted into the action chamber. The apparatus is not limited to a specific implant, for example arranged in a specific package. The apparatus can thus be used universally. Since the action space is an open space and plasma ignition can be generated between the metallization structure and the object to be activated itself, there is no need to meet special requirements for the encapsulation of the object to be activated. Rather, such an encapsulation can be dispensed with.

[0010] The action space of the dielectric action chamber is not a closed space. Rather, the action space can have an inlet and an outlet, so that an air flow can flow through the action space. As an alternative, the action space can only have an inlet.

[0011] The metallization structure can be a metal layer which is applied on the wall in a material-locking manner. As an alternative, the metallization structure can be separated from the wall by a gap with a small gap size. For this purpose, the metallization structure can be applied to the wall, for example by means of a plug connection.

[0012] The wall composed of dielectric material separates the metallized structure and the object to be activated, wherein the high-voltage source is designed to load a high voltage between the metallized structure and the object. Here, the wall can act as a dielectric barrier and is then responsible for igniting the plasma by means of a dielectric barrier discharge between the metallized structure and the object to be activated. The metallized structure can act as an electrode here. The plasma is mostly ignited directly at the dielectric barrier when a dielectric barrier discharge occurs. In addition to the inner side of the wall, the surface of the object to be activated can also act as a dielectric barrier. As a result, the plasma can be ignited directly on the surface of the object to be activated. Correspondingly, the plasma can activate the surface of the object with high efficiency and hydrophilize it.

[0013] The plasma ignition by means of a dielectric barrier discharge offers a number of advantages for the hydrophilization of the object. When a dielectric barrier discharge occurs, the plasma is mostly ignited directly on the dielectric barrier. Correspondingly, many plasmas are ignited on the surface of the object and activate this surface there. In a dielectric barrier discharge, the plasma ignition takes place in a microdischarge distributed over a surface, so that the object can be activated uniformly over the entire surface thereof. In a dielectric barrier discharge, oxygen forms are generated, which contribute to the hydrophilization of the surface of the object. In a dielectric barrier discharge, excessively high local energy densities are not achieved, so that damage to the object to be activated can be avoided.

[0014] The treatment of the object to be activated can take place here in ambient pressure. Ambient pressure can prevail in the action chamber. Correspondingly, the evacuation of a low-pressure chamber can be dispensed with. Correspondingly, the device used is more compact, more mobile and more cost-effective in relation to devices based on a low-pressure chamber. Furthermore, the method can be implemented significantly more quickly, since the step of evacuating a low-pressure chamber, which usually lasts for several minutes, can be dispensed with. Since the plasma can also burn directly on the object to be activated, the plasma treatment step can also be significantly shorter.

[0015] Overall, the device can thus implement a rapid treatment of the object to be activated. Integration of the plasma treatment for hydrophilization into a work process can be achieved thereby. Intermediate storage of the object to be activated can be avoided.

[0016] Furthermore, the device can have a receptacle designed to receive the object to be activated and move it into the action space.

[0017] The device can be designed in such a way that the object to be activated is only in direct mechanical contact with the receiving part. In this way, contamination of the object by the dielectric walls of the action chamber or by the high-voltage source can be ruled out.

[0018] The receiving part can be a mechanical element designed to grasp and secure the object to be activated. The receiving part can be designed for this purpose to move the object to be activated along a defined path. The receiving part can additionally be designed to load an electrical potential at the object to be activated.

[0019] The receiving part can be designed to move the object to be activated in the action space in a rotational and / or translational movement. The receiving part can here be moved either by hand or by a mechanical drive, for example a motor. By the rotational and translational movement of the object to be activated in the action space, uniform treatment of the object to be activated with the plasma can be ensured.

[0020] The object to be activated can be an implant to be treated with non-thermal atmospheric pressure plasma before a medical treatment. Implants in the dental sector can be involved, for example. By treatment of the implant with non-thermal atmospheric pressure plasma, the wettability of the implant with water or blood can be improved, thereby improving the growth properties of the implant. Here, the plasma treatment of the implant is carried out before the medical treatment. The device can enable the plasma treatment of the implant to be carried out in a short period of time, so that the plasma treatment can be carried out immediately before the start of the medical treatment and intermediate storage can be dispensed with.

[0021] The high-voltage source can be designed to generate a dielectric barrier discharge between the object to be activated and the metallized structure.

[0022] In the action space, atmospheric pressure is preferably present. In an alternative embodiment, the pressure in the action space can be less than 1 Atm. Atmospheric pressure in the action space offers the advantage that a step of pumping the action space can be dispensed with and the method can thus be carried out more quickly.

[0023] The device is designed to hydrophilize the surface of the object to be activated by treatment with non-thermal atmospheric pressure plasma.

[0024] The device can have a base unit with an opening for receiving the dielectric action chamber. Here, all reusable elements of the device, that is, elements that can be used for multiple plasma processes for different objects, can be arranged in the base unit. The high-voltage source can be arranged in the base unit, in particular. The base unit can have a closed housing in which the opening for receiving the dielectric action chamber is configured.

[0025] The dielectric action chamber can be designed to be placed into the opening of the base unit before the plasma process and removed from the opening of the base unit after the plasma process is carried out. Correspondingly, the dielectric action chamber is a single-use product that is used only for a single plasma process. A correspondingly designed dielectric action chamber can be selected for each plasma process. For example, the device can have a set of different dielectric action chambers that enable different plasma processes.

[0026] The wall of the dielectric action chamber can have a region arranged at the inlet of the dielectric action chamber and in which the wall has a higher thickness than in other regions. This region can form a flange. The inlet of the dielectric action chamber can here be the opening of the dielectric action chamber through which the object to be activated can be inserted into the action space.

[0027] The region with the increased thickness can fulfill several purposes. It can constitute a support of the dielectric action chamber on the base unit and here enable a defined positioning of the dielectric action chamber on the base unit. The region with the increased thickness can also form a support surface for the receiving portion and thus enable the arrangement of the receiving portion and the object to be activated held by the receiving portion at a defined position relative to the dielectric action chamber. Furthermore, the region with the increased thickness can provide an isolation between the metallization structure and the receiving portion.

[0028] The metallization structure can be a continuous sleeve-like metallization structure or have a plurality of annular segments separated from one another. The sleeve-like metallization structure can enable a uniform plasma treatment of large implants and thus further reduce the processing time. The annular metallization structure has the advantage of reducing its capacitance and thus the parasitic load between the electrode and the implant. Furthermore, the field strength is particularly high at the edges of the annular metallization structure. Another alternative is a single annular segment that extends less than the size of the object to be treated. Here, the object to be treated can be moved relative to the annular segment so that all faces of the object to be treated are sufficiently treated with plasma are ensured.

[0029] The high-voltage source can have a piezoelectric transformer. Here, the high voltage can either be tapped from the output side of the piezoelectric transformer by means of a mechanical contact and applied to the electrode or the object to be activated, or transmitted from the output region of the piezoelectric transformer to the electrode or the object to be activated by means of a contactless spark gap. Piezoelectric transformers have the main advantage that they can be operated with a small input voltage, even with a battery, and can be designed as mobile devices in correspondence therewith.

[0030] The device can have a ventilation device and / or a filter element. The ventilation device and the filter can be arranged in the base unit. The ventilation device can be arranged in such a way that it generates an air flow through the action space, by means of which the object to be activated is cooled. The filter can be an ozone filter, which prevents an excessively high ozone concentration outside the base unit.

[0031] The action space can be filled with air. The device can be designed for carrying out a plasma treatment with air as process gas. The use of expensive special gases, such as argon, is not necessary.

[0032] The dielectric action chamber can be a replaceable disposable.

[0033] The inner diameter of the wall of the dielectric action chamber can be between 4 mm and 7 mm. Such an inner diameter allows the accommodation of common dental implants. The wall should not have an inner diameter that is larger than the inner diameter required to achieve as high a field strength as possible inside the tube. In order to surface-activate the object to be activated, there should be a field strength of at least 5 kV / mm inside the tube.

[0034] According to a further aspect, the invention relates to a method for treating an object to be activated with non-thermal atmospheric pressure plasma, the method having the following steps:

[0035] - removing a dielectric action chamber from a sterile packaging, wherein the dielectric action chamber has a wall composed of a dielectric material, which encloses an action space, and wherein a metallization structure is applied on the outer side of the wall, which points away from the action space,

[0036] - placing the dielectric action chamber into an opening of a base unit, wherein the base unit has a high-voltage source,

[0037] - inserting an object to be activated into the action space, and

[0038] - a high voltage is applied at the object to be activated or at the metallized structure and a dielectric plasma discharge is generated between the object and the metallized structure thereby. The method can last for a time of 90 seconds or less, preferably for a time of 60 seconds or less, in particular for a time of 30 seconds or less.

[0039] The action space can here be an open space. The object to be activated can be taken out of a sterile sheath immediately before insertion into the action space. The object to be activated can be grasped with a receptacle and placed into the action space by means of the receptacle.

[0040] The method according to the second aspect can be carried out with the apparatus described above. BRIEF DESCRIPTION OF DRAWINGS

[0041] The application is explained below by means of the drawings. Therein:

[0042] Figure 1 An apparatus for generating a dielectric barrier discharge is shown schematically;

[0043] Figure 2 The apparatus shown in Figure 1 is shown in greater detail;

[0044] Figure 3 A dielectric action chamber in a sterile package is shown;

[0045] Figure 4 , Figure 5 and Figure 10 Alternative embodiments of a dielectric action chamber are shown;

[0046] Figures 6 to 9 Alternative embodiments of an apparatus for generating a dielectric barrier discharge are shown. DETAILED DESCRIPTION

[0047] Figure 1 An apparatus for generating a dielectric barrier discharge is shown schematically, which is designed for treating an object 1 to be activated with non-thermal atmospheric pressure plasma. The object 1 to be activated is an implant, which is designed for being placed in a human or animal body. In particular dental implants are involved. However, the apparatus is also designed for treating other objects with non-thermal atmospheric pressure plasma. The object 1 to be activated can for example consist of titanium, in particular 4-degree titanium, or zirconium oxide. Both materials are common for implants. As an alternative or in addition, the object 1 to be treated can have a metal, a plastic or a ceramic.

[0048] The surface of the object 1 is hydrophilized by the treatment with the non-thermal atmospheric pressure plasma. It is known that the healing time of implants is significantly shortened and that the growth properties (osseointegration) of the implants are significantly improved when the surface of the implants is hydrophilic. The healing process has additionally increased stability for hydrophilic objects.

[0049] A pure titanium surface is hydrophilic and can be well wetted with water or with blood in correspondence therewith. However, the surface can become hydrophobic due to organic dirt. Such dirt can arise, for example, when the implant is manufactured or installed. By treating the implant in the device shown in Figure 1 the surface is hydrophilized. The good wetting of the implant with blood leads to a short healing time and stabilizes the healing process.

[0050] The device has a dielectric action chamber 2. The dielectric action chamber 2 has a wall 3 composed of a dielectric material, which encloses an action space 4. The action space 4 is an open space. The wall 3 is Figure 1 cannula-like in the embodiment shown. The dielectric action chamber 2 has an inlet 2a through which the object 1 to be treated can be inserted into the action space 4. The outlet 2b is opposite the inlet 2a. An air flow can flow through the action space 4 from the inlet 2a to the outlet 2b.

[0051] The material of the wall 3 is chemically inert, so that chemical contamination of the object 1 to be activated is avoided during the plasma treatment. The wall 3 can have, for example, quartz, glass or aluminum oxide.

[0052] The thickness D of the wall 3 is between 0.5 mm and 3.0 mm, preferably between 1.0 mm and 2.0 mm. For example, the thickness D of the wall can be 1.5 mm. Such a thickness D of the wall 3 can achieve that the wall 3 acts as a dielectric barrier when a plasma discharge occurs. The thickness D here specifies the distance between the inner side 7 of the wall 3 and the outer side 5 of the wall 3.

[0053] The wall 3 encloses the action space 4. In the action space 4 there can be atmospheric pressure. It is not necessary for the device to reduce the pressure in the action space 4 to low pressure before the plasma treatment. However, in an alternative embodiment of the device, the pressure in the action space 4 can be reduced, so that there is a smaller pressure than atmospheric pressure in the action space 4.

[0054] The action space 4 is filled with air. In an alternative embodiment, the action space 4 is filled with other process gases.

[0055] The outer side 5 of the wall, which points away from the action space 4, can be partially or completely coated with a metallization 6. The metallization 6 forms an electrode. The metallization 6 consists of an electrically conductive material, for example copper or silver. The metallization 6 can be applied in a sputtering or galvanic manner. A further possible solution for applying the metallization 6 is the use of adhesive strips, metal hoses pressed onto the tube or conductive spray paint.

[0056] The metallization 6 completely surrounds the cylindrical wall 3 along the outer circumference of the wall 3. The length L of the metallization 6 describes the extension of the metallization 6 in the longitudinal direction. The longitudinal direction here extends along the symmetry axis of the cylindrical wall 3 of the dielectric action chamber.

[0057] The length L of the metallization 6 should be adapted to the length of the object 1 to be treated. The length L of the metallization 6 can be between 10 mm and 30 mm. For example, a length of 20 mm of the metallization 6 can be chosen. A metallization 6 having such a length L is sufficient for completely surrounding a common dental implant and thereby ensuring the simultaneous treatment of the entire implant. The metallization 6 can also be made longer, since only a plasma ignition occurs between the electrode and the implant. As an alternative, the length L of the metallization 6 can also be chosen significantly smaller than the length of the object 1 to be treated. In this case, the object 1 to be treated must be moved relative to the metallization 6 in the longitudinal direction in such a way that the object 1 is completely treated with plasma.

[0058] In the embodiment shown in Figure 1 The metallization 6 is connected to a high-voltage source 9 via a contact 8. The high-voltage source 9 is designed to generate a high voltage and to load it at the metallization 6. For example, the high-voltage source 9 can be a piezoelectric transformer. The high voltage generated in the output region of the piezoelectric transformer is tapped and loaded at the metallization 6 via the contact 8. Alternative high-voltage sources 9 that provide a high-voltage alternating voltage can also be used.

[0059] Furthermore, the device has a receiving part 10 which is designed to grasp the object 1 to be treated and to insert it into the action space 4. The object 1 to be treated is connected to the reference potential, in particular to the electrical potential, by the receiving part 10. The receiving part 10 is designed to insert the object 1 to be treated into the action space 4 with a linear movement. Furthermore, the receiving part 10 can be designed to move the object 1 to be treated inside the action space 4 with a linear movement. For example, this can involve a movement up and down. Furthermore, the receiving part 10 is designed to rotate the object 1 to be treated inside the action space 4 with a rotational movement. By the linear movement and the rotational movement of the object 1 to be treated inside the action space 4, it is possible to ensure that the surface of the object 1 to be treated is uniformly treated with plasma.

[0060] The object 1 to be treated, on which the reference potential is loaded by the receiving part 10, functions as a counter electrode when the plasma is discharged, wherein the electrode is formed by the metallization structure 6 of the wall 3. The wall 3 functions as a dielectric barrier between the metallization structure 6 and the object 1 to be treated. Plasma ignition occurs by dielectric barrier discharge, in which plasma is generated directly on the surface of the object 1 to be treated when the dielectric barrier is discharged.

[0061] The receiving part 10 can be a tool which is either moved by hand or is connected to a mechanical drive. It can also be, for example, a torque ratchet or a spanner.

[0062] Figure 2 The device shown in Figure 1 is shown in more detail. Furthermore, the device has a base unit 11 with a housing 12 into which the dielectric action chamber 2 is inserted. The dielectric action chamber 2 is designed as a sterile exchange unit. This dielectric action chamber is inserted into the housing 12 immediately before the plasma treatment. The base unit 11 has an opening into which the dielectric action chamber 2 is inserted.

[0063] In the base unit 11 the high-voltage source 9 and, if necessary, further elements are arranged. In the base unit 11 a control unit 13 for operating the high-voltage source 9 is arranged. The control unit 13 has an interface for interacting with a user. For example, the control unit 13 has a display and function keys. Furthermore, the base unit 11 can have a ventilation device 14. The ventilation device 14 can be responsible for a continuous air flow through the dielectric action chamber 2. Thereby it can be ensured that the object 1 to be treated is cooled by the air flow and does not heat up too strongly during the plasma treatment. Furthermore, the base unit 11 can have a filter 15 which is arranged between the dielectric action chamber 2 and the air outlet of the ventilation device 14. The filter 15 can be designed, inter alia, for filtering out ozone. Ozone is produced as a by-product during the plasma treatment and can be harmful to health in too high concentrations. By supplementing the ozone filter 15 it can be ensured that too high ozone concentrations cannot occur outside the housing 12.

[0064] In the base unit 11 the components of the device are permanently arranged which do not have to be replaced after each plasma treatment of an object 1 to be activated. The high-voltage source 9, the control unit 13, the ventilation device 14 and the filter 15 belong to the components.

[0065] The dielectric action chamber 2 is placed into the base unit 11 immediately before the plasma treatment. When placing the dielectric action chamber 2 into the opening of the base unit 11, the dielectric action chamber 2 is arranged such that the metallization structure 6 is in electrical contact with the high-voltage source 9 so that the high-voltage source 9 loads the metallization structure 6 with high voltage. When placing the dielectric action chamber 2 into the base unit 11, the metallization structure 6 is connected with the contact 8.

[0066] Subsequently the object 1 to be treated can be inserted into the action space 4 by means of the receptacle 10. For this purpose, the object 1 to be treated is grasped by the receptacle 10 and placed through the inlet 2a of the dielectric action chamber 2. Now the plasma treatment begins, wherein the object 1 to be treated is moved during the plasma treatment by means of the receptacle 10. The plasma treatment lasts for a time of 90 seconds or less, preferably for a time of 60 seconds or less, in particular for a time of 30 seconds or less.

[0067] After the plasma treatment, the object 1 to be activated is first removed from the base unit 11 and subsequently the dielectric action chamber 2. After the plasma treatment has ended, the object 1 to be activated can be removed from the dielectric action chamber 2 and the medical treatment can be started, for example, immediately with the step of implant placement. An intermediate storage of the object 1 to be treated is not necessary. Due to the short duration of the plasma treatment, the plasma treatment can be carried out immediately before the medical treatment with implant placement.

[0068] The wall of the dielectric action chamber 2 has a region 16 in the area of the inlet 2a, which has a higher thickness than the wall 3 in the remaining area of the dielectric action chamber 2. By the increased thickness, the region 16 forms a flange of the dielectric action chamber 2. The region 16 forms a support structure, which rests on the housing 12 when the dielectric action chamber 2 is arranged in the opening of the base unit 11. In this way, the dielectric action chamber 2 can be positioned stably on the base unit 11. Here it is ensured that the dielectric action chamber 2 is arranged in a defined position. Furthermore, the region 16 of increased thickness serves as a support structure for the receptacle 10 when the object 1 to be activated is placed into the action chamber 2 by the receptacle 10. Thereby the object 1 to be activated is arranged in a defined position inside the action space 4. Furthermore, the region 16 of increased thickness serves for the insulation between the metallization structure 6 and the receptacle 10. Furthermore, the region 16 of increased thickness is responsible for the sealing of the housing 12, so that only little ozone escapes at the opening of the housing 12, into which the dielectric action chamber 2 is placed.

[0069] Figure 3 It is shown that the dielectric action chamber 2 is in a sterile packaging 17. The dielectric action chamber 2 is used only once when plasma treating and should be cleaned after the plasma treatment has been carried out. A new dielectric action chamber 2 should be placed into the base unit 11 before the next plasma treatment. In this way it can be achieved that a very cost-intensive cleaning of the high-voltage source 9 can be avoided. The dielectric action chamber 2 is removed from the sterile packaging 17 immediately before being placed into the base unit 11. In this way it is ensured that the dielectric action chamber 2 is not contaminated.

[0070] Figure 4 An alternative embodiment of the dielectric action chamber 2 is shown. In the alternative embodiment shown in Figure 4 In the alternative embodiment shown in the wall 3 additionally has a bottom 18, which closes the outlet of the action chamber. This dielectric action chamber can also be placed into a housing.

[0071] Figure 5 Another alternative embodiment of the dielectric action chamber 2 is shown. In the embodiment shown in Figure 5 In the embodiment shown in Fig. 2, an active substance 19 is additionally arranged on the bottom of the action chamber 2. The active substance 19 can be a process gas or a liquid. If the active substance 19 is delivered at a given vapor pressure during the dielectric barrier discharge, a new phase can be generated in the gas phase, which has the characteristic of a strong oxidation or which has a reducing characteristic or which can release chemically reactive fragments, wherein a rough glassy layer can be generated on the object to be activated. For example, the active substance 19 can have water or hydrogen peroxide, whereby oxidation can be induced during the dielectric barrier discharge. As an alternative or in addition, the active substance 19 can have hydrogen, which has a reducing effect during the dielectric barrier discharge. As an alternative or in addition, the active substance 19 can be an HMDSO or TEOS silicon organic compound, which is coated by means of PECVD (Plasma enhanced chemical vapor deposition) and releases chemically reactive fragments.

[0072] The metallization structure 6 has an outwardly protruding protrusion 6a, which enables contact to the metallization structure 6. In addition, the metallization structure 6 is covered by an insulation 6b, wherein the protrusion 6a protrudes from the insulation 6b and is thereby not bound by the insulation 6b. The insulation 6b protects the metallization structure 6. The protrusion 6a enables contact to the metallization structure 6 despite the insulation 6b. The action chamber 2 shown in the preceding figures can also have a metallization structure 6 with a protrusion 6a protruding outwardly and an insulation 6b.

[0073] Figure 6 Another alternative embodiment of the device is shown. In the embodiment shown in Figure 6 In the embodiment shown in Fig. 2, an active substance 19 is additionally arranged on the bottom of the action chamber 2. The active substance 19 can be a process gas or a liquid. If the active substance 19 is delivered at a given vapor pressure during the dielectric barrier discharge, a new phase can be generated in the gas phase, which has the characteristic of a strong oxidation or which has a reducing characteristic or which can release chemically reactive fragments, wherein a rough glassy layer can be generated on the object to be activated. For example, the active substance 19 can have water or hydrogen peroxide, whereby oxidation can be induced during the dielectric barrier discharge. As an alternative or in addition, the active substance 19 can have hydrogen, which has a reducing effect during the dielectric barrier discharge. As an alternative or in addition, the active substance 19 can be an HMDSO or TEOS silicon organic compound, which is coated by means of PECVD (Plasma enhanced chemical vapor deposition) and releases chemically reactive fragments.

[0074] Figure 7 Another alternative embodiment of the device is shown. In the embodiment shown in Figure 7In the embodiment shown in Fig. 6, the high-voltage source 9 is not connected to the metallization 6 on the dielectric process chamber 2, but to the object 1 to be treated. In correspondence therewith, the high voltage is applied to the object 1 to be treated. The metallization 6 on the dielectric process chamber 2 is connected to a reference potential. As in the preceding embodiments, dielectric discharge and plasma ignition occur due to the potential difference between the surface of the object 1 to be treated and the metallization 6. The wall 3 of the dielectric process chamber 2 also acts here as a dielectric barrier.

[0075] Figure 8 A further embodiment is shown in Fig. 7. In this embodiment, the high-voltage source 9 is not connected to the metallization 6 on the dielectric process chamber 2, but to the object 1 to be treated. In correspondence therewith, the high voltage is applied to the object 1 to be treated. The metallization 6 on the dielectric process chamber 2 is connected to a reference potential. As in the preceding embodiments, dielectric discharge and plasma ignition occur due to the potential difference between the surface of the object 1 to be treated and the metallization 6. The wall 3 of the dielectric process chamber 2 also acts here as a dielectric barrier. Figure 8 Figure 5 In the embodiment shown in Fig. 8, a plurality, for example three, piezoelectric transformers as high-voltage sources 9 are arranged around the dielectric process chamber 2. The piezoelectric transformers are operated open, that is to say that the energy transfer also takes place by spark gap or discharge as shown in Fig. 6. By using a plurality of high-voltage sources 9, the energy losses that inevitably occur in contactless energy transfer can be compensated. The object 1 to be activated rotates in the process space 4 during plasma treatment.

[0076] Figure 9 A further embodiment as an alternative is shown in Fig. 9, in which a first high-voltage source 9, which is a piezoelectric transformer, is arranged at the longitudinal side of the process chamber 2 and contactlessly transfers energy to the metallization 6. In addition, a second high-voltage source, in particular a second piezoelectric transformer, is arranged underneath the bottom 18 of the dielectric process chamber 2. A metallization 6 is applied on the outer side of the bottom 18, which points away from the process space 4, and the piezoelectric transformer transfers high voltage 9 to the metallization. Thereby, plasma ignition occurs between the bottom 18 and the object 1 to be activated. The energy transfer between the second high-voltage source 9 and the metallization 6 of the bottom 18 takes place contactlessly, that is to say by discharge or spark gap. As an alternative, the second high-voltage source 9 and the metallization 6 can be electrically connected by a contact 8.

[0077] Figure 10 A further embodiment of the dielectric process chamber 2 is shown in Fig. 10. In the embodiment shown in Fig. 11, the metallization 6 is not continuous, but consists of a plurality of annular metallizations 6 that are separated from one another. Each ring of the metallization 6 can for example have a length in the range of 1 mm to 3 mm, wherein between the two rings a face with a stretch in the longitudinal direction of between 0.5 mm and 2.0 mm is arranged, which is free of metallization 6. Figure 10

[0078] ​​The annular design of the metallized structure 6 leads to a reduction of the capacitance, whereby the parasitic load is reduced. The energy consumption of the device is thereby reduced and less reactive current flows. Furthermore, the field strength at the edge of the ring is particularly high, whereby a particularly effective plasma treatment can be achieved. As an alternative, it is also possible to use only a single ring as metallized structure 6 and to move the object 1 to be treated sufficiently along the longitudinal direction in order to ensure that it is treated over its entire surface.

[0079] Reference signs:

[0080] 1 object / implant to be activated

[0081] 2 dielectric action chamber

[0082] 2a inlet

[0083] 2b outlet

[0084] 3 wall

[0085] 4 action space

[0086] 5 outer side

[0087] 6 metallized structure

[0088] 6a protrusion

[0089] 6b insulation

[0090] 7 inner side

[0091] 8 contact

[0092] 9 high-voltage source

[0093] 10 receiving portion

[0094] 11 base unit

[0095] 12 housing

[0096] 13 control unit

[0097] 14 ventilation device

[0098] 15 filter

[0099] 16 region / flange

[0100] 17 packaging

[0101] 18 bottom

[0102] 19 active substance

[0103] D thickness of the wall

[0104] L Length of the metallization structure.

Claims

1. An apparatus for generating dielectric barrier discharge, the apparatus being used to treat an object (1) to be activated with non-thermal atmospheric pressure plasma, the apparatus having: - A dielectric working chamber (2), the dielectric working chamber having walls (3) made of dielectric material, and the dielectric working chamber surrounding the working space (4), wherein, A metallization structure (6) is applied to the outer side (5) of the wall (3) pointing away from the working space (4), wherein the metallization structure (6) is a metal layer applied to the wall (3) in a material-locking manner, wherein the metallization structure (6) has an outwardly protruding protrusion (6a) that enables contact with the metallization structure (6), wherein the working space (4) is an open space; and - High-voltage source (9), which is designed to apply high voltage to the metallized structure (6) or to the object to be activated (1) when the object to be activated (1) is arranged in the action space.

2. The apparatus according to claim 1, in, The device has a receiving part (10) designed to receive the object (1) to be activated and move it into the action space (4).

3. The apparatus according to claim 2, in, The receiving part (10) is designed to allow the object (1) to be activated to move in the action space (4) by rotational and / or translational motion.

4. The apparatus according to claim 1 or claim 2, in, The object to be activated (1) is an implant that is treated with non-thermal atmospheric pressure plasma prior to medical treatment.

5. The apparatus according to claim 1 or claim 2, in, The high-voltage source (9) is designed to generate dielectric barrier discharge between the object to be activated (1) and the metallized structure (6).

6. The apparatus according to claim 1 or claim 2, in, Atmospheric pressure exists in the operational space (4), or There is a pressure of less than 1 Atm in the action space (4).

7. The apparatus according to claim 1 or claim 2, in, The device is designed to hydrophilize the surface of the object to be activated (1) by a process performed with non-thermal atmospheric pressure plasma.

8. The apparatus according to claim 1 or claim 2, It has a base unit (11) having an opening for receiving (10) the dielectric working chamber (2).

9. The apparatus according to claim 8, in, The dielectric working chamber (2) is designed to be inserted into the opening of the base unit (11) before plasma treatment and removed from the opening of the base unit (11) after plasma treatment is performed.

10. The apparatus according to claim 8, in, The high-voltage source (9) is arranged in the base unit (11).

11. The apparatus according to claim 1 or claim 2, in, The wall (3) of the dielectric working chamber (2) has a region (16) located at the entrance (2a) of the dielectric working chamber (2), and the wall (3) in the region has a higher thickness than in other regions.

12. The apparatus according to claim 1 or claim 2, in, The metallized structure (6) is a continuous sleeve-shaped metallized structure (6), or the metallized structure (6) has a plurality of annular segments separated from each other.

13. The apparatus according to claim 1 or claim 2, in, The high-voltage source (9) has a piezoelectric transformer.

14. The apparatus according to claim 1 or claim 2, in, The device has a ventilation device (14) and / or a filter (16).

15. The apparatus according to claim 1 or claim 2, in, The working space (4) is filled with air.

16. The apparatus according to claim 1 or claim 2, in, The dielectric working chamber (2) is a replaceable disposable item.

17. The apparatus according to claim 1 or claim 2, in, The inner diameter of the wall (3) of the dielectric chamber (2) is in the range of 4 mm to 7 mm.

18. The apparatus according to claim 1 or claim 2, in, The device has multiple high-voltage sources (9).

19. A method for treating an object (1) to be activated with non-thermal atmospheric pressure plasma, the method comprising the following steps: - Remove the dielectric working chamber (2) from the sterile packaging (17), wherein, The dielectric working chamber (2) has a wall (3) made of dielectric material surrounding the working space (4), and wherein a metallization structure (6) is applied on the outer side (5) of the wall (3) away from the working space (4), wherein the metallization structure (6) is a metal layer applied to the wall (3) in a material-locking manner, wherein the metallization structure (6) has an outwardly protruding protrusion (6a) that enables contact with the metallization structure (6). - The dielectric working chamber (2) is placed into the opening of the base unit (11), wherein the base unit (11) has a high voltage source (9). - Insert the object to be activated (1) into the action space (4), and - Apply high voltage to the object (1) to be activated or to the metallized structure (6), thereby generating a dielectric plasma discharge between the object (1) and the metallized structure (6).

20. The method according to claim 19, in, The method lasts for less than 90 seconds.

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