Vapor Delivery System for Solid and Liquid Materials

Abstract

Disclosed is a vapor delivery system, which includes: a housing body that defines an internal volume therein; a plurality of chokes for receiving a carrier gas to generate a gas distribution pipeline in the internal volume; at least two surfaces to which a solid or liquid precursor is applied to allow the carrier gas to pass along these gas distribution pipelines over the at least two surfaces to mix with the solid or liquid precursor vapor; a gas collection device downstream of these gas distribution pipelines for delivering a mixture of the carrier gas and the solid or liquid precursor vapor out of the system; and a flow controller fluidly connected to a carrier gas source to control the feed flow rate of the carrier gas fed into the internal volume. The gas distribution flow rate along each gas distribution pipeline is controlled by the feed flow rate of the carrier gas fed into the internal volume.

Description

[0001] Cross - reference to related applications

[0002] This application claims priority to U.S. Patent Application No. 16 / 718,321, filed on December 18, 2019, the entire content of which is incorporated herein by reference. Technical field

[0003] The present invention relates to devices and methods for vaporizing and transporting solid and liquid materials. In particular, the present invention relates to devices and methods for vaporizing and transporting solid precursors or solid source precursors or liquid precursors for semiconductor manufacturing processes such as chemical vapor deposition (CVD) and / or atomic layer deposition (ALD) processes. Background art

[0004] ALD and CVD processes that apply solid precursors require reliable solid precursor delivery systems that provide a stable vapor pressure for the solid precursors during these processes. In existing solid precursor delivery devices / vessels, a carrier gas flows through a heated container containing (a) volatile solid precursor(s) under conditions favorable for solid vaporization. The carrier gas mixes with the vaporized solid, and the vaporized solid is withdrawn from the container in a vacuum environment and transported with the carrier gas to a reaction chamber. The known solid precursor delivery process is challenging for reliably delivering solid precursors to the reaction chamber. For example, when the solid precursor is vaporized, the heat of vaporization causes heat loss and a temperature drop of the underlying solid precursor material. This tends to prevent or limit further vaporization of the underlying solid precursor.

[0005] US 8,986,456 and US 9,593,416 of Fondurulia et al. disclose a device in which a carrier gas flows on a single channel having a serpentine path (grove) in a vapor delivery tank loaded with solids to bring the vapor generated by the solids to an outlet for constant vapor delivery during a deposition process. Disadvantages of existing vapor delivery systems may include: i) the single channel is prone to clogging by solid materials; ii) there is no seal between these paths, so the carrier gas may flow into or bypass into other compartments rather than through the serpentine path pattern, which changes the stability of the vapor pressure; iii) due to its complex structure, it is difficult to fill the tank with solid materials, and the solid material loading capacity per run is too limited.

[0006] US 2014 / 0174955 of Sasagawa discloses a high - flow XEF2 tank for gas delivery from a solid phase source in a processing system, where the flowing gas for inflow into multiple trays is uncontrolled.

[0007] US 6444038 to Rangarajan et al. discloses a dual sintered bubbler where sintered material (porous glass) is used in the bubbler but not for distributing a gas flow into multiple channels to control the flow rate.

[0008] EP 0714999 to Garenne et al. discloses a method for sublimating a solid material and an apparatus for practicing the method, where two porous material plates are applied to the solid material but not for distributing a gas flow into multiple channels.

[0009] Accordingly, there remains a need to design novel solid vapor delivery systems that can increase the material loading capacity per run and are simpler, lighter, and less costly than existing solid vapor delivery systems. SUMMARY OF THE INVENTION

[0010] Disclosed is a vapor delivery system for vaporizing a solid precursor. The disclosed vapor delivery system includes:

[0011] A housing body that defines an internal volume therein;

[0012] A housing cover that includes a gas inlet and a gas outlet;

[0013] A plurality of restrictors that are fluidly connected to the gas inlet and are configured and adapted to receive a carrier gas from the gas inlet and create a gas distribution line in the internal volume;

[0014] At least two compartments or channels that are included in a lower portion of the internal volume and have the solid or liquid precursor therein, the at least two compartments or channels being configured and adapted to allow the carrier gas to pass along the gas distribution lines over the at least two compartments or channels to mix with the vapor of the solid or liquid precursor therefrom;

[0015] A gas collection device that is downstream of the at least two compartments or channels and is fluidly connected to the gas outlet in the housing cover,

[0016] The gas collection device being configured and adapted to deliver a mixture of the carrier gas and the vapor from the solid or liquid precursor out of the system; and

[0017] A flow controller that is fluidly connected to a carrier gas source and is configured and adapted to control the feed flow rate of the carrier gas into the internal volume through the gas inlet,

[0018] The gas distribution flow rate of the carrier gas along each gas distribution line is controlled by the feed flow rate of the carrier gas fed into the gas inlet.

[0019] In some embodiments, the disclosed vapor delivery system further comprises baffles on the inside of the housing cover, the baffles configured and adapted to generate turbulence to effectively mix the carrier gas and vapor from the solid precursor.

[0020] In some embodiments, the deflectors are composed of strip-shaped bars on the inner side of the housing cover that are perpendicular to the flow direction of the carrier gas.

[0021] In some embodiments, the side view of the baffles is in the shape of a sawtooth, a triangle, a sinusoidal wave, or side-by-side semicircles.

[0022] In some embodiments, the disclosed vapor delivery system further comprises at least two inner walls in the interior volume, the at least two inner walls being configured and adapted to divide the interior volume into at least three sections, the at least three sections comprising a first section, a second section, and a third section.

[0023] In some embodiments, each inner wall is fixed to the bottom of the inner volume and the side walls of the inner volume and is perpendicular to the surface of the bottom of the inner volume and the side walls.

[0024] In some embodiments, the at least two inner walls are parallel to each other.

[0025] In some embodiments, the at least two inner walls are parallel to each other and / or perpendicular to each other.

[0026] In some embodiments, the at least two inner walls are flat walls or curved walls.

[0027] In some embodiments, the height of the two inner walls is shorter than the height of the side walls of the interior volume.

[0028] In some embodiments, the at least three sections open into a common area forming a single continuous top compartment in a top portion of the interior volume, through which the gas distribution lines pass.

[0029] In some embodiments, the plurality of flow spoilers are placed in the first section.

[0030] In some embodiments, the plurality of flow resistors are suspended in the first section from a gas inlet in the housing cover.

[0031] In some embodiments, the gas collection device is placed in the third section.

[0032] In some embodiments, the gas collection device is suspended in the third section from a gas outlet in the housing lid.

[0033] In some embodiments, the disclosed vapor delivery system further includes a separator that divides the second section into the at least two compartments or channels.

[0034] In some embodiments, each separator is inserted into the at least two inner walls and fixed to the bottom of the inner volume.

[0035] In some embodiments, each separator is connected to the at least two inner walls and the bottom of the inner volume at an angle of approximately 90°.

[0036] In some embodiments, the height of each separator is higher than the height of the at least two inner walls such that once the housing body and the housing lid are assembled together, each separator is able to contact or engage with a corresponding structure formed on the inner side of the housing lid.

[0037] In some embodiments, the aspect ratio (or maximum span) of the length to the diameter of the at least two compartments or channels is approximately 10:1.

[0038] In some embodiments, the diameter of each of the at least two compartments or channels is in the range of 1 / 2” to 2” or even larger.

[0039] In some embodiments, the plurality of restrictors and the gas collection device are respectively part of the first section and the third section to receive the carrier gas from the gas inlet, create the gas distribution pipelines in the inner volume, and deliver a mixture of the carrier gas and the vapor from the solid or liquid precursor to the gas outlet.

[0040] In some embodiments, the gas collection device includes a filter to allow the carrier gas and the vapor of the solid or liquid precursor to flow through and block solid particles.

[0041] In some embodiments, the restrictors are holes filled with a porous material.

[0042] In some embodiments, the porous material within the holes is further contained by a metal element selected from a metal tube, metal balls, or a metal plate.

[0043] In some embodiments, the average size of the restrictors is in the range of about 1 mm to about 1 cm.

[0044] In some embodiments, the average pore size of the pores in the porous material is about 1 micron or less.

[0045] In some embodiments, the gas distribution flow rate of the carrier gas along the gas distribution pipelines is approximately the same.

[0046] In some embodiments, the at least two compartments or channels formed in the internal volume are arranged vertically one above the other.

[0047] In some embodiments, a top view of the at least two compartments or channels has a shape selected from a parallel linear shape, an S shape, or a zigzag shape.

[0048] In some embodiments, the gas outlet is fluidly connected to an atomic layer deposition (ALD) chamber or a chemical vapor deposition (CVD) chamber.

[0049] In some embodiments, the carrier gas is Ne, Ar, Kr, Xe, or N2.

[0050] In some embodiments, the carrier gas is N2.

[0051] In some embodiments, the carrier gas is Ar.

[0052] In some embodiments, the flow controller is a mass flow controller.

[0053] In some embodiments, the plurality of chokes are placed inside the housing body.

[0054] In some embodiments, the plurality of chokes are placed outside the housing body.

[0055] In some embodiments, the plurality of chokes are placed in the housing cover.

[0056] Disclosed is a method for vaporizing and transporting a solid precursor. The method includes the following steps:

[0057] Placing the solid or liquid precursor in at least two compartments or channels formed in a bottom portion of an internal volume defined by a housing;

[0058] Vaporizing the solid or liquid precursor to form a vapor from the solid or liquid precursor;

[0059] Feeding a carrier gas into the internal volume through a porous device placed in the internal volume and fluidly connected to a gas inlet of the housing, wherein pores in the porous device create gas distribution pipelines along which the carrier gas flows and mixes with the vapor from the solid or liquid precursor to form a gas mixture;

[0060] Adjusting a flow rate of the carrier gas fed into the internal volume such that a flow rate of the carrier gas flowing along each gas distribution pipeline is controlled by the flow rate of the fed carrier gas; and

[0061] The mixture of the carrier gas and the vapor from the solid or liquid precursor is delivered out of the internal volume through a gas collection device in the internal volume, and the gas collection device is fluidly connected to the gas outlet of the housing.

[0062] In some embodiments, the method further includes the step of delivering the mixture of the carrier gas and the vapor from the solid or liquid precursor to an ALD or CVD process chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0063] For a further understanding of the nature and objects of the present invention, reference should be made to the following detailed description taken in conjunction with the accompanying drawings, in which like elements are given the same or similar reference numerals and in which:

[0064] Figure 1 is a block diagram of an example of a restrictor made of a porous material in a porous metal device fluidly connected to an inlet; and

[0065] Figure 2 is a block diagram showing the gas flow and distribution pipelines in the disclosed vapor delivery system.

[0066] Figure 3 is a block diagram of a top view of an exemplary embodiment of the vapor delivery system body;

[0067] Figure 4 is a block diagram of an inside-out top view of an exemplary embodiment of the vapor delivery system cover;

[0068] Figure 5 is along the Figure 3 is a block diagram of a cross-sectional view taken along line AA shown in;

[0069] Figure 6 is along the Figure 3 is a block diagram of a cross-sectional view taken along line BB shown in;

[0070] Figure 7 is a block diagram of a top view of an alternative exemplary embodiment of the vapor delivery system;

[0071] Figure 8 is a block diagram of a top view of another alternative exemplary embodiment of the vapor delivery system;

[0072] Figure 9 is a block diagram of a top view of another alternative exemplary embodiment of the vapor delivery system;

[0073] Figure 10 in the form of a cross-sectional view like Figure 6 is a block diagram of another exemplary embodiment of the disclosed vapor delivery system having different configurations of a porous metal device;

[0074] Figure 11 In the form of a sectional view like Figure 6 is a diagram of another exemplary embodiment of the disclosed vapor delivery system having two layers of compartments / channels; and

[0075] Figure 12 is a block diagram of a top view of an exemplary embodiment of a vapor delivery system body in the shape of a cylinder, the vapor delivery system body having a plurality of channels and multiple layers; and

[0076] Figure 13 is a block diagram of a sectional view of an exemplary embodiment of the vapor delivery system body along Figure 11 the line CC shown in, the vapor delivery system body having two layers of compartments / channels. Detailed Description

[0077] Systems and methods for vaporizing and delivering solid and liquid materials to semiconductor manufacturing processes, such as chemical vapor deposition (CVD) and / or atomic layer deposition (ALD) processes, are disclosed. In particular, the disclosed subject matter relates to apparatuses and methods for vaporizing and delivering solid and / or liquid precursors, or solid source and / or liquid source precursors, for semiconductor manufacturing processes. The disclosed vapor delivery system is capable of stabilizing the vapor pressure during the deposition process and providing a constant vapor delivery. The disclosed vapor delivery system utilizes a porous material as a flow restrictor to create multiple gas distribution pipelines with a consistent flow rate within the internal volume of the system. The porous material fills multiple orifices in metal hollow tubes, balls, or plates. The carrier gas passes through multiple pores, openings, or holes of each flow restrictor to reach the multiple gas distribution pipelines (i.e., the carrier gas flow). The size of the pores is designed such that it creates a designed pressure drop for the carrier gas across the flow restrictor, resulting in a substantially identical carrier gas flow rate along all gas distribution pipelines, or different but with a substantially stable flow rate ratio. The flow rate of the carrier gas along all gas distribution pipelines in the internal volume can be controlled by adjusting the flow rate of the carrier gas fed into the internal volume of the disclosed system. The disclosed vapor delivery system includes multiple channels and provides high throughput. The disclosed vapor delivery system is simplified compared to existing vapor delivery systems on the market and can increase the loading amount of solid materials and reduce costs.

[0078] The disclosed vapor delivery system can be a tank including multiple compartments / channels. The number of compartments / channels can vary according to the specific requirements of the semiconductor manufacturing process. More specifically, the disclosed vapor delivery system contains multiple small compartments / channels, where the aspect ratio of the length to the diameter of each compartment / channel is approximately 10:1, and the diameter of each compartment / channel / cylinder can range from 1 / 2” to 2” or even larger.

[0079] The disclosed vapor delivery system utilizes a porous material as a restrictor to generate a pressure drop of the carrier gas and create a gas distribution line or flow path in the tank, thereby producing a substantially stable flow rate ratio, preferably a substantially uniform carrier gas flow rate, along the gas distribution line in the tank. The pore diameter of the pores of the porous material is preferably about 1 micron or less. Orifices (e.g., calibrated orifices, flow-limiting orifices) having orifice diameters ranging from micron sizes to several millimeters or capillaries having a tube diameter of about several millimeters or less can provide a similar pressure drop. The porous material fills the pores in a metal tube, sphere, plate, or any shape suitable for placement in the tank. In this way, the flow rate of the carrier gas along the plurality of gas distribution lines can be adjusted by controlling the flow rate of the carrier gas fed into the system. A single flow controller (such as a mass flow controller (MFC)) can be used to adjust the flow rate of the fed carrier gas. Thus, only one MFC can be used to control the flow rate of the carrier gas along all the gas distribution lines in the tank.

[0080] The disclosed vapor delivery system includes a gas distribution cap or lid attached to the body of the vapor delivery system. In a particular set of embodiments, the gas distribution lid includes an inlet, at the end of which is a tube vertically connected to the inlet, the length of the tube being substantially the same as the width of the tank and having a diameter of about 1 to 5 mm. This inlet tube serves as a restrictor. The tube can be made of different metals or alloys having holes therein. The porous material fills these holes, allowing the carrier gas to flow out from the pores. The pore sizes can range from about a few nanometers to several millimeters, and each pore size is substantially uniform and the same. Preferably, the average pore size is about 1 micron or less.

[0081] Figure 1A diagram of an example of a plurality of restrictors made of a porous material in a porous metal device that is fluidly connected to an inlet. As shown, the restrictors 12a, 12b, 12c, 12d, 12e, and 12f are holes filled with a porous material 14 in the porous metal device 10. The number of restrictors formed in the porous metal device 10 varies. The number of restrictors formed in the porous metal device 10 is equal to or greater than 1, preferably 2 or more. The porous metal device 10 made of stainless steel or the like is fluidly connected to the inlet 16. The holes or restrictors 12a, 12b, 12c, 12d’, 12e, and 12f have the same shape and size and are uniformly distributed on the closed hollow porous metal device 10. The size of the restrictors 12a, 12b, 12c, 12d’, 12e, and 12f can range from one millimeter to one centimeter. The porous metal device 10 is a closed hollow metal tube that has an inlet fluidly connected to the inlet 16. The length and diameter of the metal tube can be several centimeters. Thus, the carrier gas enters the porous metal device 10 from the inlet 16 and exits the porous metal device 10 through the restrictors 12a, 12b, 12c, 12d’, 12e, and 12f that have the porous material 14 therein. P1 is the pressure of the carrier gas entering the inlet 16; P2 is the pressure of the carrier gas reaching the restrictors 12a, 12b, 12c, 12d’, 12e, and 12f; P3 is the pressure of the carrier gas flowing out of the restrictors 12a, 12b, 12c, 12d’, 12e, and 12f. P4 is the pressure of a mixture (not shown) of the carrier gas and vapor from a solid precursor that is to be delivered to a semiconductor manufacturing process (not shown). The size of the pores in the porous material 14 is preferably substantially the same, more preferably about 1 micron or less. The size of the restrictors 12a, 12b, 12c, 12d’, 12e, and 12f is preferably substantially the same, more preferably with a diameter or maximum diagonal length of about 1 mm to about 1 cm. When the carrier gas flows through the restrictors, this configuration will produce a pressure drop. Thus, P2 - P3 >> P3 - P4. In embodiments where the pore size of the porous material 14 is the same and the size of the restrictors 12a, 12b, 12c, 12d’, 12e, and 12f is the same, all gas distribution pipelines / streams formed by the restrictors 12a, 12b, 12c, 12d’, 12e, and 12f will have the same pressure drop and thus will have the same gas rate exiting the restrictors 12a, 12b, 12c, 12d, 12e, and 12f.

[0082] Figure 2 A diagram of the gas flow and distribution pipelines of the disclosed vapor delivery system or canister. The flow rate of the carrier gas fed to the disclosed vapor delivery system is controlled by a mass flow controller (MFC) 20. As Figure 1As shown, the carrier gas is introduced into a metal tube that has a plurality of restrictors 22a, 22b, 22c, 22d, 22e, 22f filled with a porous material. Six restrictors are shown for illustration purposes. The plurality of restrictors can be any practicable number considering the pore size relative to the size of the metal tube and the size of the holes in the metal tube. Here, the restrictors 22a, 22b, 22c, 22d, 22e, 22f are the result of the pores of the porous material where pressure drops are generated, and in the preferred case of pores of the same size, each carrier gas stream flowing out of the restrictors 22a, 22b, 22c, 22d, 22e, 22f has the same gas flow rate along the gas distribution line 24 in the gas distribution and vaporization zone where the solid precursor material is vaporized. P1 is the pressure of the carrier gas at the inlet to the tank; P 2a is the pressure of the carrier gas arriving at the restrictor 22a; P 3a is the pressure of the carrier gas flowing out of the restrictor 22a. Similarly but not shown, P 2b is the pressure of the carrier gas arriving at the restrictor 22b; P 3b is the pressure of the carrier gas flowing out of the restrictor 22b; and so on. P4 is the pressure of the mixture of carrier gas and solid precursor vapor delivered to the semiconductor manufacturing reactor. The disclosed vapor delivery system or tank with the same pore size generates equal pressure drops, i.e., P 2a - P 3a = P 2b - P 3b = P 2c - P 3c etc., P 2a - P 3a >> P 3a - P4, and P 2a - P 3a >> P1 - P 2a , thus generating equal flow rates from each restrictor. Compared with P2 - P3 (i.e., P 2a - P 3a , P 2b - P 3bCompared with the pressure drops of (such as), other pressure drops in the gas flow path of the device are preferably negligible. Thereafter, the carrier gas passing through the restrictor is mixed with the vapor of the solid precursor in the gas distribution and vaporization zone, and the mixture of the carrier gas and the solid precursor vapor is collected and transported to the semiconductor manufacturing process. Therefore, only one MFC is required to control the flow rates of all gas distribution pipelines in the disclosed solid vapor delivery system. Herein, the gas distribution pipeline refers to the path through which the carrier gas flows in the gas distribution and vaporization zone once it exits the restrictor. Herein, as shown in the following embodiments and drawings, the restrictor is placed inside the vapor delivery tank, but is not limited thereto. In some embodiments, the restrictor can be placed outside the vapor delivery tank. In some embodiments, the restrictor can be placed in the housing cover or system cover of the vapor delivery tank.

[0083] Figure 3 is a block diagram of a top view of an exemplary embodiment of a vapor delivery system body for vaporizing and delivering a solid precursor or a solid source precursor for a semiconductor manufacturing process. The exemplary embodiment of the vapor delivery system body can also be used for vaporizing and delivering a liquid precursor or a liquid source precursor for a semiconductor manufacturing process. The vapor delivery system can be in the shape of a tank or a vessel, and includes a vapor delivery system body 100 and a Figure 4 vapor delivery system cover 200 as referred to below. As Figure 3 shown, the system body 100 is surrounded by a housing 102, which defines an internal volume 120 therein. The housing 102 can be made of stainless steel or the like. The system body 100 is fixed or screwed to the system cover 200 through a through hole 104 in the housing 102 to form a vapor delivery system. A gasket or seal 106 is added between the system body 100 and the system cover 200. The seal 106 will not contact the solid precursor or the solid source precursor placed inside the vapor delivery system. In the internal volume 120, two inner walls 108a and 108b divide the internal volume 120 into three compartments. Both of the two inner walls 108a and 108b are fixed to the bottom of the internal volume 120 and the side wall of the internal volume 120, and are substantially perpendicular to the surface of the bottom of the internal volume and the side wall of the internal volume. As Figure 3 shown, the two inner walls 108a and 108b can be parallel to each other, but are not limited thereto. The two inner walls 108a and 108b can be flat walls. As Figure 12 shown, the two inner walls 108a and 108b can be curved walls in a cylindrical tank. As Figure 8 and Figure 9As shown, the number of inner walls in the internal volume 120 can be more than two, and these inner walls can be parallel and / or perpendicular to each other. The heights of the two inner walls 108a and 108b are shorter than the height of the side wall of the internal volume 120. The resulting three compartments include a first compartment 110, a second compartment 112, and a third compartment 114. Since the heights of the two inner walls 108a and 108b are shorter than the side wall of the internal volume 120, the top portions of the three compartments 110, 112, and 114 lead to a common area, thereby forming a single continuous top compartment or zone.

[0084] The first compartment 110 is formed by an inner wall 108a, the bottom of the internal volume 120, and the side wall of the internal volume 120. The first compartment 110 includes a porous metal device 116 that is mounted on a gas inlet pipe 118 suspended in the first compartment 110 for feeding a carrier gas into the internal volume 120. Thus, one end of the gas inlet pipe 118 is fluidly connected to the porous metal device 116, allowing the carrier gas to be injected into the internal volume 120 through the porous metal device 116, thereby forming a plurality of gas distribution pipelines in the internal volume. The porous metal device 116 includes a flow restrictor, as Figure 1 shown. The gas inlet pipe 118 is mounted below Figure 4in the system cover 200 shown. Each pore in the porous metal device 116 forms a flow restrictor through which the carrier gas experiences a pressure drop as it passes, preferably such that a substantially uniform or equal carrier gas flow can be obtained along the plurality of gas distribution lines 117 in the internal volume 120. The porous metal device 116 can be a metal tube, sphere, plate, etc., where a porous material fills the pores formed in the metal tube. When assembling the disclosed system, the porous metal device 116 suspended in the first compartment 110 is secured to the system cover 200 via the gas inlet tube 118. A carrier gas source can be fluidly connected to the gas inlet for feeding the carrier gas into the internal volume 120. The porous metal device 116 can be made of metal or alloy, etc. The pore size of the porous metal device 116 can vary according to the requirements of the pressure drop. In one embodiment, the porous metal device 116 is made of stainless steel or other metal or alloy and has an average pore size of 1 micron or less. Pores with a small pore size generate a larger pressure drop when gas flows through. By keeping the pores in the porous metal device 116 of substantially the same size and shape, all the gas distribution lines 117 will have approximately the same pressure drop and thus approximately the same gas flow rate. The carrier gas can be an inert gas such as Ne, Ar, Kr, Xe, or N2, preferably N2 or Ar. N2 is taken as an example hereinafter. The carrier gas N2 is input into the porous metal device 116 through the gas inlet tube 118 and flows out of the pores or flow restrictors of the porous metal device 116, which have a uniform N2 flow distribution along the gas distribution lines 117 in the internal volume 120, as described above. In this way, by adjusting the flow rate of the input N2, a uniform or nearly uniform N2 flow through the gas distribution lines 117 in the internal volume 120 is correspondingly changed. The flow rate of the input N2 can be adjusted with an MFC, as Figure 2 shown. Thus, by using one flow controller, a substantially uniform N2 flow distribution in the internal volume 120 is obtained. The N2 flow distribution in the internal volume 120 will stabilize the vapor pressure of the vaporized solid in the internal volume 120 and thereby provide a constant vapor delivery during the relevant semiconductor manufacturing process.

[0085] Once the carrier gas N2 exits from the porous metal device 116, the carrier gas N2 then flows on the first inner wall 108a through the top compartment into the second compartment 112. The second compartment 112 is formed within two inner walls 108a, 108b, the bottom of the internal volume 120, and two side walls of the internal volume 120. The solid precursor material 122 is placed in the second compartment 112. The solid precursor 122 can be a metal halide, metal oxyhalide, metal amide, metal carbonyl, metal chloride, etc. Here the metal can be selected from Al, Zr, Hf, Mo, W, etc. The partition 124 divides the second compartment 112 into a plurality of parallel sub-compartments or channels, such as 112a, 112b, 112c, 112d, 112e, and 112f. Preferably, the partition 124 divides the second compartment 112 into at least two parallel sub-compartments or channels, and there may be more than six such sub-compartments. Each partition 124 is fixed between the two inner walls 108a, 108b and the bottom of the internal volume 120. In a preferred embodiment, each end of the partition 124 is connected to the two inner walls 108a, 108b at an angle of approximately 90°. The height of each partition 124 is higher than the height of the two inner walls 108a, 108b, such that once the system body 100 and the system cover 200 are assembled, each partition 124 can contact the corresponding partition 208 formed on the inner side of the system cover 200 referenced below Figure 4 In this way, in this preferred embodiment, the sub-compartments or channels 112a, 112b, 112c, 112d, 112e, and 112f are formed by the partitions 124 that are rectangular or parallel linear in a top view. The sub-compartments or channels 112a, 112b, 112c, 112d, 112e, and 112f can have a shape different from that in the top view, such as an S-shape or a zigzag shape, as long as the carrier gas N2 flows along the top of the solid precursor material 122 through the channel and mixes with the vapor of the solid precursor material 122 to form a uniform mixed gas flow 126 in the top compartment. The partition 124 can alternatively be inserted into complementary grooves in the cover. Any configuration for forming a substantially continuous partition 124 from the cover to the bottom is acceptable. The aspect ratio of the length to the diameter of each sub-compartment / channel is about 10:1, and the diameter (maximum span) of each sub-compartment / channel can be in the range of 1 / 2" to 2" or even larger.

[0086] Then, the carrier gas N2 mixed with the vapor of the solid precursor material flows on the second inner wall 108b and enters the third compartment 114. The third compartment 114 includes a gas collection device or a gas redistribution device 128 vertically mounted on the gas outlet 130. Similar to the porous metal device 116 for generating a substantially uniform N2 distribution to flow into the internal volume 120, the gas collection device 128 collects the mixed gas stream 126 here and conveys the mixed gas out of the vapor delivery system through the gas outlet 130 to a semiconductor process such as an application reactor. The gas outlet 130 is also mounted in the system cover 200. The gas collection device 128 can also be in the shape of a tube, a sphere, a plate, etc. The gas collection device 128 can be of any shape as long as the mixed gas is redistributed into the gas outlet pipe 130. The gas collection device 128 can be made of metal or metal alloy with holes thereon. The size of the holes in the gas collection device 128 can be in the range from millimeters to centimeters, etc. The gas collection device 128 can also be made of a mesh material through which gas can flow. The mesh material can have a mesh size in the range from millimeters to centimeters, etc. A filter (not shown) can be added outside the gas collection device 128.

[0087] With this embodiment, by using a flow controller (such as an MFC) to control the N2 gas input into the gas inlet 118, the carrier gas N2 can be uniformly distributed along the gas distribution pipeline 117 in the internal volume 120 onto the channels 112a-f. No additional MFC is required to form a uniform N2 flow in the internal volume 120. The advantages of using one MFC are: i) generating a substantially uniform N2 flow rate along all gas distribution pipelines; and ii) having a uniform N2 flow rate in all gas distribution pipelines which is easy to control and operate.

[0088] Since semiconductor application processes (e.g., deposition processes) are typically operated under vacuum conditions or pressures below atmospheric pressure, when the disclosed vapor delivery systems are applied to such semiconductor applications, these systems can be operated under vacuum conditions or at pressures below atmospheric pressure. This vacuum suction will enhance the flow of the carrier gas along the gas distribution pipeline or from the porous metal device 116 to the gas collection device 128.

[0089] Figure 4 is a block diagram of an inside-out view of an exemplary embodiment of a vapor delivery system cover for vaporizing and delivering a solid precursor or a solid source precursor for a semiconductor manufacturing process. The edge 202 of the system cover 200 includes a plurality of through-holes 204 that match the through-holes 104 shown in Figure 3 for mounting the vapor delivery system body 100 and the vapor delivery system cover 200 together. The seal 206 is in line with Figure 3When the system body 100 and the system cover 200 are installed together, the seal 206 (or 106) preferably causes the vapor delivery system to be sufficiently airtight to limit or prevent gas leakage or atmospheric infiltration. Figure 3 The dividers 124 in the system body 100 shown in FIG have corresponding divider portions 208 in the system cover 200, and when the system cover 200 is installed together on the system body 100, each divider portion contacts one divider 124. Here, each set of dividers 124 and divider portions 208 can be sufficiently airtight to limit or prevent gas leakage between or within the sub-compartments 112a-f. Between the corresponding divider portions 208 are a plurality of deflectors 210 that are configured to enhance gas flow turbulence for better gas mixing of the carrier gas and the vapor from the solid precursor. The gas inlet hole 212 and the gas outlet hole 214 are through holes in the system cover 200, Figure 3 The gas inlet 118 and gas outlet 130 shown in FIG. 1 pass through these passages and are mounted therein (preferably by airtight seals or fittings). The shape of the vapor delivery system is not limited to Figure 1 and Figure 2 The shape of the vapor delivery system can be a cubic tank, a rectangular tank, a cylindrical tank, etc.

[0090] Figure 5 is an exemplary embodiment of a vapor delivery system along Figure 3 , a cross-sectional side view of line AA shown in . The system cover 302 and the system body 308 are installed or screwed together. The system cover 302 includes corresponding separator portions 304 and a baffle 306 installed on the inner side of the system cover 302. The system body 308 defines an internal volume, which includes a separator 310 and a solid precursor material 312. The separator 310 and the inner wall (not shown) divide the internal volume into sub-compartments / channels, each sub-compartment / channel containing a solid precursor material 312. Once the system cover 302 and the system body 308 are installed together, the corresponding separator portions 304 and separators 310 on the system cover 302 are in contact with each other. The connection between the corresponding separator portions 304 and separators 310 may or may not be airtight.

[0091] Figure 6 is an exemplary embodiment of a vapor delivery system along Figure 3 4. The system cover 402 and the system body 410 are mounted together. Attached to the inside of the system cover 402 are a plurality of baffles 404 that are arranged along the Figure 3In the cross-sectional side view of line BB shown in [the figure], it has a side-by-side triangular shape. The baffle 404, the surfaces of the solid precursor 408, and the inner wall (not shown) form a top compartment 420 through which the carrier gas N2 flows and carries the vapor of the solid precursor 408. The baffle 404 can generate turbulence in the carrier gas and the vapor of the solid precursor, thereby effectively mixing the carrier gas and the vapor of the solid precursor. In the medial everted view perpendicular to the flow direction of the carrier gas or the inner side of the gas distribution pipeline, the baffle 404 has a strip shape on the inner side of the system cover 402. The side view of the baffle 404 shown here has a side-by-side triangular shape, but is not limited thereto. The side view of the baffle 404 can have a shape of side-by-side equilateral triangles, equilateral triangles, or right triangles. The side view of the baffle 404 can have any shape that provides turbulence for the carrier gas N2, such as serrated, triangular to sinusoidal, side-by-side semi-circular, etc. The carrier gas N2 is input into the gas inlet pipe 412 and then distributed into the internal volume 422 of the system through the porous metal device 414 along the gas distribution pipeline at a substantially uniform flow rate, as described above. The carrier gas N2 travels through the top compartment 420 of the internal volume 422. When encountering the vapor of the solid precursor, the carrier gas N2 mixes with the vapor of the solid precursor. The mixture of the carrier gas N2 and the vapor of the solid precursor then continues to flow and reaches the third compartment, as Figure 3 shown in [the figure], where the gas collection device 416 placed in this third compartment collects the mixture of the carrier gas N2 and the vapor of the solid precursor and allows the mixture to move forward into the gas outlet 418. In this way, the mixture of the carrier gas N2 and the vapor of the solid precursor is transported to, for example, the reactor of a semiconductor manufacturing application. The flow rate of the input carrier gas N2 is controlled by a flow controller (such as an MFC) that is fluidly connected to the N2 gas source outside the system. By adjusting the flow rate of the input carrier gas N2, the flow rate of the carrier gas N2 distributed into the gas distribution pipeline by the porous metal device 414 in the internal volume 422 can be controlled. In this way, only one MFC for controlling the flow rate of the input carrier gas N2 is required, enabling operation to accurately and effectively obtain a uniform flow rate of the carrier gas in the internal volume 422.

[0092] The disclosed vapor delivery system includes various embodiments having different gas distribution pipelines.

[0093] Figure 7 is an alternative exemplary embodiment of the disclosed vapor delivery system having multiple channels. The carrier gas N2 flows into the internal volume 508 of the system through the gas inlet 502 and the porous gas device 510, and then flows onto a plurality of parallel compartments 512 where the solid precursor material 514 is placed. The mixture of the carrier gas N2 and the vapor of the solid precursor is then collected by the gas collection device 504 and flows out of the system through the gas outlet 506.

[0094] Figure 8is another exemplary embodiment of the disclosed vapor delivery system having two channels. The carrier gas N2 flows into the internal volume 608 of the system through the gas inlet 602 and the porous gas device 610, and then into a plurality of parallel compartments 612 containing the solid precursor material 614. The mixture of the carrier gas N2 and the solid precursor vapor is then directed by the gas collection device 604 and flows out of the system through the gas outlet 606. In this embodiment, two S-shaped channels are included. If more porous gas devices 610 and more gas collection devices 604 are added, more channels can be included.

[0095] Figure 9 is another exemplary embodiment of the disclosed vapor delivery system having two channels. The carrier gas N2 flows into the internal volume 708 of the system through the gas inlet 702 and the porous gas device 710, and then into a plurality of parallel compartments 712 containing the solid precursor material 714. The mixture of the carrier gas N2 and the solid precursor vapor is then collected by the gas collection device 704 and flows out of the system through the gas outlet 706. In this embodiment, two S-shaped channels are included. Similarly, if more porous gas devices 710 and more gas collection devices 704 are added, more channels can be included.

[0096] Figure 10 in the form of a cross-sectional view like Figure 6 is another exemplary embodiment of the disclosed vapor delivery system having a different configuration of porous metal devices. Figure 10 The difference between Figure 6 is that Figure 6 the porous metal device 414 in Figure 10 is replaced by the porous metal device 814, and the gas collection device 416 in

[0097] Figure 11 in the form of a cross-sectional view like Figure 6 is another exemplary embodiment of the disclosed vapor delivery system having two layers of sub-compartments / channels. Figure 11 The difference between Figure 10 is that Figure 10 the similar compartments shown in Figure 11 are formed on top of another compartment shown in Figure 10Similar to that shown. The porous metal devices 914 and 914' are respectively placed on top of the two inner walls 908a and 908a'. The gas collection devices 916 and 916' are respectively placed on top of the other two inner walls 908b and 908b'. Similarly, the porous metal devices 914 and 914' generate gas distribution pipelines, and the gas collection devices 916 and 916' collect the mixture of the carrier gas and the solid precursor vapor.

[0098] The shape of the disclosed vapor delivery system is variable. The disclosed vapor delivery system can be in the shape of a cylinder. As Figure 12 shown (the thickness of the wall is not shown), the inlet 32 is in the hollow central axis of the cylinder. The inner wall 38 divides the inner volume of the cylinder into a plurality of channels, and the solid precursor material 36 is placed in the plurality of channels. The outlet 34 is located between the inner volume of the cylinder and the outer wall. The plurality of channels can have at least two layers. Figure 13 (The thickness of the wall is shown) is a block diagram of a cross-sectional view along the line CC of an exemplary embodiment of the vapor delivery system body, and the vapor delivery system body has two layers of compartments / channels. Figure 12 is Figure 13 is Figure 12 a combination of it and its chiral symmetry.

[0099] The disclosed subject matter also includes a method of using a vapor delivery system applied to ALD and / or CVD processes. The method includes the following steps: placing a solid precursor in at least two compartments formed in the bottom portion of the inner volume defined by the housing; evaporating the solid precursor to form a vapor from the solid precursor; feeding a carrier gas into the inner volume through a porous metal device placed in the inner volume and fluidly connected to the gas inlet of the housing, wherein the pores in the porous metal device generate gas distribution pipelines, and the carrier gas flows along these gas distribution pipelines and mixes with the vapor from the solid precursor; adjusting the flow rate of the carrier gas fed to the gas inlet such that the flow rate of the carrier gas flowing along each gas distribution pipeline is controlled by the flow rate of the fed carrier gas; and delivering the mixture of the carrier gas and the solid precursor vapor to the ALD and / or CVD process chamber through a gas collection device in the inner volume, and the gas collection device is fluidly connected to the gas outlet of the housing.

[0100] The disclosed vapor delivery system can be heated to enhance the vaporization of the solid precursor and prevent condensation in the whole system. The disclosed vapor delivery system can be maintained at room temperature or heated to the sublimation temperature of the solid precursor or a higher temperature to vaporize the solid precursor.

[0101] The carrier gas can be an inert gas, such as: He, Ne, Ar, Kr, Xe, N2. Preferably, the carrier gas is N2 or Ar.

[0102] The disclosed vapor delivery system can be oriented vertically with the lid on top, or it can be oriented horizontally with the lid on the side. In the case of horizontal orientation, the top of the compartment / channel requires a plate to cover the compartment to prevent the solid material from flowing out. Alternatively, the disclosed vapor delivery system can be oriented vertically to load the solid precursor material and horizontally to deliver the vapor to the application reactor. For liquid precursors, the disclosed vapor delivery system can be oriented vertically to deliver the liquid vapor to the application reactor.

[0103] The disclosed vapor delivery system can include, but is not limited to, the following advantages. The disclosed vapor delivery system provides multiple channels or at least two channels for vaporizing the solid precursor, with no contact between the channels and no bypass between the channels, and no blockage in each channel. Using porous material as a flow restrictor, the disclosed vapor delivery system can provide a consistent high-throughput gas flow.

[0104] The mention of "an embodiment" or "embodiments" in this document means that the specific features, structures, or characteristics described with respect to that embodiment may be included in at least one embodiment of the present invention. The phrase "in an embodiment" that appears in different places in the specification does not necessarily all refer to the same embodiment, and separate or alternative embodiments are not necessarily mutually exclusive of other embodiments. The above also applies to the term "implement".

[0105] As used in this application, the word "exemplary" is used herein to mean serving as an example, instance, or illustration. Any aspect or design described herein as "exemplary" need not be construed as preferred or advantageous over other aspects or designs. Rather, the use of the term exemplary is intended to present concepts in a concrete manner.

[0106] In addition, the term "or" is intended to mean an inclusive "or" rather than an exclusive "or". That is, unless otherwise stated or clear from the context, "X employs A or B" is intended to mean any natural inclusive arrangement. That is, if X employs A; X employs B; or X employs both A and B, then "X employs A or B" is satisfied in any of the foregoing cases. In addition, the articles "a / an" used in this application and the appended claims should generally be construed to mean "one or more" unless otherwise stated or clearly indicated as the singular form from the context.

[0107] The singular forms "a / an" and "the" include plural referents unless the context clearly indicates otherwise.

[0108] "About" or "approximately" or "substantially" in this document or in the claims means ±10% of the stated value.

[0109] As used herein, "room temperature" in the specification or claims means from about 20 °C to about 25 °C.

[0110] It should be noted herein that when the precursor is in a gaseous state at room temperature and ambient pressure, the terms "precursor" and "deposition compound" and "deposition gas" can be used interchangeably. It should be understood that the precursor can correspond to or be related to the deposition compound or deposition gas, and the deposition compound or deposition gas can refer to the precursor.

[0111] Note that herein, the terms "chamber" and "reactor" can be used interchangeably. It should be understood that the chamber can correspond to or be related to the reactor, and the reactor can refer to the chamber.

[0112] "Comprising" in the claims is an open transitional term, which means that the subsequently identified claim elements are a non-exclusive list, i.e., anything else can be additionally included and remain within the scope of "comprising". "Comprising" is defined herein as necessarily encompassing the more restrictive transitional terms "consisting essentially of" and "consisting of"; thus "comprising" can be replaced by "consisting essentially of" or "consisting of" and remain within the clearly defined scope of "comprising".

[0113] Ranges can be expressed herein as from about one specific value and / or to about another specific value. When expressing such a range, it should be understood that another embodiment is from the one specific value and / or to the other specific value, along with all combinations within the range.

[0114] It should be understood that many additional changes in details, materials, steps, and arrangements of parts, which have been described and elucidated herein to explain the nature of the invention, can be made by those skilled in the art within the principles and scope of the invention as expressed in the appended claims. Therefore, the invention is not intended to be limited to the specific embodiments given in the above examples and / or the accompanying drawings.

[0115] Although embodiments of the invention have been shown and described, those skilled in the art can modify them without departing from the spirit or teachings of the invention. The embodiments described herein are merely exemplary and non-limiting. Many variations and modifications of the compositions and methods are possible and within the scope of the invention. Therefore, the scope of protection is not limited to the embodiments described herein, but is only defined by the subsequent claims, the scope of which should include all equivalents of the subject matter of these claims.

Claims

1. A vapor delivery system for vaporizing a solid or liquid precursor, the vapor delivery system comprising: A housing body that defines an internal volume therein; At least two inner walls in the internal volume, the at least two inner walls being configured to divide the internal volume into at least three sections, the at least three sections including a first section, a second section, and a third section, wherein the second section is adjacent to and located between the first section and the third section; Wherein each inner wall is fixed to the bottom and the sidewall of the internal volume and is perpendicular to the surface of the bottom and the sidewall of the internal volume; Wherein the height of the at least two inner walls is shorter than the height of the sidewall of the internal volume, such that the at least three sections lead to a common area that forms a single continuous top compartment in the top portion of the internal volume through which a gas distribution line passes; A housing cover that includes a gas inlet and a gas outlet; A plurality of restrictors fluidly connected to the gas inlet and configured and adapted to receive a carrier gas from the gas inlet and generate a gas distribution line in the internal volume; At least two compartments or channels contained in the lower portion of the internal volume and having the solid or liquid precursor therein, the at least two compartments or channels being configured and adapted to allow the carrier gas to pass along the gas distribution lines over the at least two compartments or channels to mix with the vapor of the solid or liquid precursor therefrom; A gas collector fluidly connected to the gas outlet in the housing cover downstream of the at least two compartments or channels; The gas collector being configured and adapted to deliver a mixture of the carrier gas and the vapor from the solid or liquid precursor out of the system; And A flow controller fluidly connected to a carrier gas source, the flow controller being configured and adapted to control the feed flow rate of the carrier gas entering the internal volume through the gas inlet, wherein the gas distribution flow rate of the carrier gas along each gas distribution line is controlled by the feed flow rate of the carrier gas fed into the gas inlet.

2. The vapor delivery system according to claim 1, further comprising baffles on the inner side of the housing cover, the baffles being configured and adapted to generate turbulence to effectively mix the carrier gas and the vapor, wherein the baffles are composed of strip-shaped rods on the inner side of the housing cover perpendicular to the flow direction of the carrier gas, and the side view of the baffles is serrated, triangular, sinusoidal, or juxtaposed semi-circular.

3. The vapor delivery system according to claim 1, wherein, The plurality of restrictors and the gas collector are respectively disposed in the first section and the third section to receive the carrier gas from the gas inlet, generate the gas distribution lines in the internal volume, and deliver a mixture of the carrier gas and the vapor from the solid or liquid precursor to the gas outlet.

4. The vapor delivery system according to claim 1, further comprising a separator that divides the second section into the at least two compartments or channels, wherein each separator is connected to the bottom of the internal volume and the at least two inner walls at an angle of 90° ± 10%.

5. The vapor delivery system according to claim 4, wherein, The height of each separator is higher than the height of the at least two inner walls, such that once the housing body and the housing cover are assembled together, each separator is configured to contact or engage a corresponding structure formed on the inner side of the housing cover.

6. The vapor delivery system according to claim 1, wherein, The plurality of chokes are holes filled with a porous material.

7. The vapor delivery system according to claim 6, wherein, The porous material within the holes is further contained by metal elements selected from metal tubes, metal balls, or metal plates.

8. The vapor delivery system according to claim 7, wherein, The average size of the plurality of chokes ranges from 1 mm to 1 cm.

9. The vapor delivery system according to claim 7, wherein, The average pore size of the pores in the porous material is 1 micron or less.

10. The vapor delivery system according to any one of claims 1 to 9, wherein, The gas distribution flow rate of the carrier gas along the gas distribution pipelines is the same value ± 10%.

11. The vapor delivery system according to any one of claims 1 to 9, wherein, The top view of the at least two compartments or channels is in a shape selected from a linear shape, an S shape, or a zigzag shape.

12. The vapor delivery system according to any one of claims 1 to 9, wherein, The carrier gas is N2, Ne, Ar, Kr, or Xe.

13. The vapor delivery system according to any one of claims 1 to 9, wherein, The aspect ratio of the length to the diameter or the maximum span of the at least two compartments or channels is 10:1, wherein the diameter of each of the at least two compartments or channels is in the range of 1 / 2” to 2” or greater.

14. A method for vaporizing and delivering a solid or liquid precursor, the method comprising the following steps: Placing the solid or liquid precursor in at least two compartments or channels formed in the bottom portion of an internal volume defined by a housing; At least two inner walls in the internal volume, the at least two inner walls being configured to divide the internal volume into at least three sections, the at least three sections including a first section, a second section, and a third section, wherein the second section is adjacent to the first section and the third section and is located between the first section and the third section; Wherein each inner wall is fixed to the bottom of the internal volume and the side wall of the internal volume, and is perpendicular to the surface of the bottom of the internal volume and the side wall; Wherein the height of the at least two inner walls is shorter than the height of the side wall of the internal volume, such that the at least three sections lead to a common area, the common area forming a single continuous top compartment in the top portion of the internal volume through which a gas distribution pipeline passes; Vaporizing the solid or liquid precursor to form a vapor from the solid or liquid precursor; Feeding a carrier gas into the internal volume through a porous device placed in the internal volume and fluidly connected to the gas inlet of the housing, wherein the pores in the porous device form the gas distribution pipelines, and the carrier gas flows along the gas distribution pipelines and mixes with the vapor from the solid or liquid precursor to form a gas mixture; Adjusting the flow rate of the carrier gas fed into the internal volume such that the flow rate of the carrier gas flowing along each gas distribution pipeline is controlled by the flow rate of the fed carrier gas; And Delivering the mixture of the carrier gas and the vapor from the solid or liquid precursor out of the internal volume through a gas collection device in the internal volume, the gas collection device being fluidly connected to the gas outlet of the housing.

15. The method according to claim 14, wherein, The average pore size of these pores is 1 micron or less.

16. The method according to claim 14, wherein The carrier gas is N2, Ne, Ar, Kr, or Xe.

17. The method according to any one of claims 14 to 16, further comprising delivering the gas mixture to an ALD or CVD process chamber.

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