Inspection Method of Plasma Processing Apparatus

Abstract

The present invention provides an inspection method for a plasma processing apparatus that can accurately measure particles on an inspection wafer. The inspection method of the plasma processing apparatus according to the embodiment includes: a step of transferring an inspection wafer from a second chamber to a first chamber by a transfer unit; a step of supplying a gas into the second chamber after the transfer of the inspection wafer to the first chamber by the transfer unit is completed; a step of performing plasma processing on the inspection wafer in the first chamber; a step of transferring the inspection wafer from the first chamber to the second chamber by the transfer unit; a step of supplying the gas into the second chamber after the transfer of the inspection wafer to the second chamber by the transfer unit is completed; and a step of measuring particles attached to the inspection wafer taken out from the second chamber.

Description

Technical Field

[0001] An embodiment of the present invention relates to a method for inspecting a plasma processing apparatus. Background Art

[0002] The plasma drying process is used, for example, when manufacturing microstructures. For example, in the manufacture of semiconductor devices, flat panel displays, photomasks, etc., various plasma processes such as etching, ashing, and damage removal are performed.

[0003] In a plasma processing apparatus for performing such plasma processing, for example, a process chamber for performing plasma processing on a process object, a transfer chamber connected to the process chamber via a gate valve, a transfer robot disposed inside the transfer chamber and for transferring the process object between the transfer chamber and the process chamber, etc. In addition, in order to maintain a reduced pressure gas environment in the transfer chamber, a load lock chamber connected to the transfer chamber via a gate valve is sometimes also provided.

[0004] In the plasma processing apparatus, plasma processing is performed in a process chamber. If the plasma processing is performed repeatedly, there is a risk of generating particles derived from reaction products generated by the plasma processing. If the generated particles fall onto the surface of the processed object and adhere to the surface of the processed object, the yield rate is reduced.

[0005] In addition, particles are not necessarily generated only in the process chamber, but may be generated, for example, by the movement of a transfer robot in a transfer chamber, or by mixing when a process object is brought into a load lock chamber from an external space, or by the opening and closing of a gate valve connecting chambers.

[0006] Therefore, it is necessary to confirm whether particles are generated before processing the workpiece and then start processing. Alternatively, when it is determined that a defect is caused by particles, it is necessary to find out in which chamber the particles are generated.

[0007] Therefore, for inspecting the state in the processing chamber, the following method is known: a wafer for inspection that is different from a wafer for product use is transported to a processing chamber to be inspected for processing, and particles on the wafer for inspection are measured to thereby inspect the state in the processing chamber (for example, refer to Patent Document 1).

[0008] However, when inspecting the state in the chamber, it may be impossible to accurately measure the particles on the inspection wafer.

[0009] Therefore, it is desired to develop a technology that can accurately measure particles on a test wafer when inspecting the state within a chamber.

[0010] [Prior art literature]

[0011] [Patent Document]

[0012] [Patent Document 1] Japanese Patent Laid-Open No. 2006-179528 Summary of the Invention

[0013] [Problems to be Solved by the Invention]

[0014] The problem to be solved by the present invention is to provide an inspection method for a plasma processing apparatus that can accurately measure particles on an inspection wafer when inspecting the state inside the inspection chamber.

[0015] [Technical Means for Solving the Problem]

[0016] The inspection method of the plasma processing apparatus according to the embodiment is the following inspection method of the plasma processing apparatus. The plasma processing apparatus includes: a first chamber that maintains a reduced-pressure gas environment at a relatively high pressure and can place a workpiece therein; a first exhaust unit that can reduce the pressure inside the first chamber to a specified pressure; a plasma generation unit that can generate the plasma; a first gas supply unit that can supply a process gas to the inside of the first chamber and to the region where the plasma is generated; a second chamber that is connected to the first chamber via a gate valve and can maintain a reduced-pressure gas environment at a relatively high pressure; a transfer unit that is provided inside the second chamber and can transfer the workpiece between the first chamber; a second exhaust unit that can reduce the pressure inside the second chamber to a specified pressure; a second gas supply unit that can supply gas to the inside of the second chamber; and a controller that can control the transfer unit, the second exhaust unit, and the second gas supply unit. The inspection method of the plasma processing apparatus includes a first particle measurement step, and the first particle measurement step includes: when transferring an inspection wafer from the second chamber to the first chamber using the transfer unit, controlling the second exhaust unit so that the pressure inside the second chamber becomes substantially equal to the pressure inside the first chamber; when the transfer of the inspection wafer to the first chamber using the transfer unit is completed, controlling the second gas supply unit to supply the gas to the inside of the second chamber; a step of performing plasma processing inside the first chamber into which the inspection wafer has been loaded; when transferring the inspection wafer from the first chamber to the second chamber using the transfer unit, controlling the second exhaust unit so that the pressure inside the second chamber becomes substantially equal to the pressure inside the first chamber; when the transfer of the inspection wafer to the second chamber using the transfer unit is completed, controlling the second gas supply unit to supply the gas to the inside of the second chamber; and a step of measuring particles adhering to the inspection wafer taken out from the second chamber.

[0017] [Effects of the Invention]

[0018] According to an embodiment of the present invention, there is provided an inspection method of a plasma processing apparatus that can accurately measure particles on an inspection wafer when inspecting the state inside a chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 is a layout diagram for illustrating the plasma processing apparatus of the present embodiment.

[0020] Figure 2 is C 16 H 30 O 4Vapor pressure curve.

[0021] Figure 3 It is a schematic cross-sectional view for exemplifying an example of a processing unit.

[0022] Figure 4 It is a schematic cross-sectional view for exemplifying a transfer section.

[0023] Figure 5 It is a timing chart for exemplifying the supply of gas during the inspection of a plasma processing apparatus including a first particle measurement process.

[0024] Figure 6 It is a timing chart for exemplifying the supply of gas during the inspection of a plasma processing apparatus including a second particle measurement process.

[0025] [Description of symbols]

[0026] 1: Plasma processing apparatus

[0027] 2: Controller

[0028] 3: Storage section

[0029] 4, 72: Transfer section

[0030] 5: Load interlock section

[0031] 6: Processing section

[0032] 7: Transfer section

[0033] 51, 61, 71: Chamber

[0034] 51a, 61c: Gate valve

[0035] 52, 66, 73: Exhaust section

[0036] 53, 65, 74: Gas supply section

[0037] 61a: Transmission window

[0038] 61b: Opening

[0039] 62: Placement section

[0040] 63: Antenna

[0041] 64a, 64b: High-frequency power supply

[0042] 64a1, 64b1: Matching unit

[0043] 65a, 74a: Flow control section

[0044] 66a: Pressure control section

[0045] 100: Object to be processed

[0046] B1, B2: Points

[0047] G: Process gas

[0048] G1: Gas

[0049] P: Plasma

[0050] T1, T2: Timing

[0051] T1a: Loading period

[0052] T2a: Unloading period Detailed implementation mode

[0053] Figure 1 is a layout diagram for illustrating the plasma processing apparatus 1 of the present embodiment.

[0054] Details of each part of the plasma processing apparatus 1 will be described later.

[0055] First, the present inventors et al. found the following through experiments using the plasma processing apparatus 1.

[0056] That is, the present inventors et al. confirmed the presence or absence of particles inside the plasma processing apparatus 1. More specifically, the present inventors et al. measured the particles inside each of the load lock section 5, the processing section 6, and the transfer section 7 using the inspection wafer 100a.

[0057] Then, the number of particles adhering to the inspection wafer 100a inside the transfer section 7 is sometimes larger than the number of particles adhering to the inspection wafer 100a inside the processing section 6. Usually, the number of particles adhering in the processing section 6 increases. When measuring the particles inside the processing section 6, the inspection wafer 100a needs to pass through the inside of the transfer section 7. That is, when particles are generated inside the transfer section 7, the particles should also adhere to the inspection wafer 100a used to measure the particles inside the processing section 6.

[0058] Therefore, the present inventors et al. also measured the particles inside the transfer section 7 multiple times. Then, it was found that the number of particles adhering to the inspection wafer 100a sometimes increases compared to the processing section 6, sometimes does not increase, and sometimes it is impossible to accurately measure the particles.

[0059] The present inventors diligently investigated the inspection wafer 100a with an increased number of attached particles. As a result, it was found that water marks were formed on the surface of the inspection wafer 100a. That is, the water marks were recognized as particles and counted. When determining where the particles were generated, if the water marks were mistaken for particles, it would be impossible to accurately determine the location where the particles were generated. Or, there is a risk of performing maintenance on parts that do not require maintenance, resulting in a decrease in the productivity of the device.

[0060] Therefore, the present inventors et al. investigated the composition of the water marks. As a result, it was found that the main components of the water marks were C 16 H 30 O 4 . After diligently investigating the C 16 H 30 O 4 , it was determined that they were the components of the sealing members used to prevent gas from flowing into the interiors of the load lock section 5, the processing section 6, and the transfer section 7.

[0061] Figure 2 It is the vapor pressure curve of C 16 H 30 O 4 .

[0062] C 16 H 30 O 4 are components that are contained in relatively large amounts in sealing members such as O-rings.

[0063] In addition, Figure 2 the points B1 and B2 in it are measured values, Figure 2 and the dashed line in it is an approximate curve based on the points B1 and B2.

[0064] In the region below the vapor pressure curve, the components of C 16 H 30 O 4 are likely to evaporate, and in the region above the vapor pressure curve, the components of C 16 H 30 O 4 are not likely to evaporate. For example, if the temperature inside the transfer section 7 is set to 50 °C, then when the pressure value inside the transfer section 7 is lower than the pressure value at which the vapor pressure curve of Figure 2 intersects the 50 °C scale line, the components of C 16 H 30 O 4 are likely to evaporate. On the contrary, when the pressure value inside the transfer section 7 is higher than the pressure value at which the vapor pressure curve of Figure 2 intersects the scale line of the temperature inside the transfer section 7, the components of C 16 H 30 O 4The components are not easily evaporated.

[0065] That is, in the case of measuring the particles in the joint portion 7, if the pressure inside the joint portion 7 is in the region above the vapor pressure curve, the release of the components of the sealing member can be suppressed.

[0066] Incidentally, since the inside of the processing unit 6 is exposed to plasma, the processing unit 6 is sometimes heated from 80 °C to about 100 °C. In such a case, since the joint portion 7 is connected to the processing unit 6, the temperature of the joint portion 7 also rises to about 50 °C to 70 °C.

[0067] According to Figure 2 the vapor pressure curve, after the workpiece 100 is transferred to the inside of the processing unit 6, if the pressure inside the joint portion 7 is set to 5×10 -3 Pa or more, even if the temperature of the joint portion 7 becomes about 50 °C, the evaporation of the C 16 H 30 O 4 components can be suppressed.

[0068] However, depending on the type of plasma processing or processing conditions, etc., the temperature of the joint portion 7 may further increase.

[0069] As a result of the research by the present inventors, the following first finding was obtained: If the pressure inside the joint portion 7 is set to 1×10 -1 Pa or more, even if the type of plasma processing or processing conditions, etc. change, the evaporation of the C 16 H 30 O 4 components can be almost eliminated.

[0070] Incidentally, the sealing member used in the processing unit 6 is the same as the sealing member used in the joint portion 7. In addition, during the period other than when plasma processing is performed, the pressure inside the processing unit 6 is maintained at a pressure at which the components of the sealing member can evaporate. Therefore, the components of the sealing member evaporate and are released into the inside of the processing unit 6, and thus there is a risk of adhering to the workpiece 100. However, as a result of the inventors' diligent investigation, the probability of contaminants (the evaporated components of the sealing member) adhering inside the joint portion 7 is higher than the probability of contaminants adhering inside the processing unit 6.

[0071] As a result of research by the present inventors and others, it is considered that the reason is as follows: In order to perform plasma processing, a process gas is introduced into the interior of the processing unit 6, and thus contaminants (components of the evaporated sealing member) are discharged from the interior of the processing unit 6 together with the process gas. That is, the following second insight is obtained: Even if the pressure inside the connection part 7 is set to be below the pressure at which the components of the sealing member can evaporate, by introducing gas into the interior of the connection part 7, it is possible to suppress the adhesion of contaminants (components of the evaporated sealing member) to the workpiece 100.

[0072] Originally, as described above, in order to suppress the release of the components of the sealing member, it is preferable that the pressure inside the connection part 7 during conveyance also becomes a pressure in a region above the vapor pressure curve. However, in the case of performing plasma processing on the workpiece 100 in the processing unit 6, in order to eliminate the influence of residual gas, the pressure inside the processing unit 6 becomes 1×10 - 3 Pa to 5×10 -3 Pa, and then the process gas is introduced. When the workpiece 100 is conveyed to the processing unit 6, when the pressure inside the connection part 7 becomes a pressure in a region above the vapor pressure curve (for example, 1×10 -1 Pa), gas flows from the connection part 7 into the processing unit 6, and the pressure of the processing unit 6 rises to the same level as the pressure inside the connection part 7.

[0073] If the pressure of the processing unit 6 rises to the same level as the pressure in the region above the vapor pressure curve, the time required to wait for the pressure to drop to a specified value becomes longer, and the processing time of the processing unit 6 becomes longer. In addition, due to the differential pressure between the pressure inside the connection part 7 and the pressure inside the processing unit 6, there is also a risk of particles flying inside the processing unit 6. Therefore, when the workpiece 100 is transferred between the connection part 7 and the processing unit 6, the pressure of the connection part 7 is temporarily set to a pressure in a region below the vapor pressure curve.

[0074] The present inventors and others have found based on the above first insight and second insight that: If the pressure inside the connection part 7 is in a region above the vapor pressure curve before and after the conveyance of the workpiece 100, while suppressing the release of the components of the sealing member, it is possible to suppress the adhesion of contaminants (components of the evaporated sealing member) to the workpiece 100.

[0075] When inspecting the plasma processing apparatus 1, it is preferable to perform the inspection under the same conditions as when actually processing the workpiece 100 using the plasma processing apparatus 1. The present inventors and others have found an inspection method for accurately measuring particles based on the first insight and the second insight, and thus completed the present invention.

[0076] Hereinafter, embodiments of the present invention will be illustrated with reference to the accompanying drawings. In addition, in each of the drawings, the same reference numerals are assigned to the same components, and detailed descriptions are appropriately omitted.

[0077] Figure 1 is a layout diagram for illustrating the plasma processing apparatus 1 of the present embodiment. As Figure 1 shown, the plasma processing apparatus 1 includes, for example: a controller 2, a storage unit 3, a transfer unit 4, a load lock unit 5, a processing unit 6, and a transfer unit 7.

[0078] The controller 2 includes, for example, an arithmetic unit such as a Central Processing Unit (CPU), and a storage unit such as a memory. The controller 2 is, for example, a computer or the like. The controller 2 controls the operations of the respective elements provided in the plasma processing apparatus 1 based on a control program stored in the storage unit.

[0079] The storage unit 3 stores the objects to be processed 100 in a stacked (multi-stage) manner, for example. The storage unit 3 is, for example, a so-called pod or a Front-Opening Unified Pod (FOUP) as a front-opening type carrier. However, the storage unit 3 is not limited to the examples, as long as it can store the objects to be processed 100. At least one storage unit 3 can be provided.

[0080] The transfer unit 4 is provided between the storage unit 3 and the load lock unit 5. The transfer unit 4 transfers and exchanges the objects to be processed 100 between the storage unit 3 and the load lock unit 5. In this case, the transfer unit 4 transfers and exchanges the objects to be processed 100 in an environment at a pressure higher than the pressure during plasma processing (for example, atmospheric pressure). The transfer unit 4 is, for example, a transfer robot having an arm for holding the objects to be processed 100.

[0081] The load lock unit 5 is provided between the transfer unit 4 and the transfer unit 7. The load lock unit 5 exchanges the objects to be processed 100 between the transfer unit 4 and the transfer unit 7 where the gas environment pressures are different. Therefore, the load lock unit 5 includes a chamber 51, an exhaust unit 52, and a gas supply unit 53.

[0082] The chamber 51 has an airtight structure capable of maintaining a gas environment with a relatively large atmospheric pressure after decompression. An opening for carrying in and out the objects to be processed 100 is provided on the side wall of the chamber 51. In addition, a gate valve 51a for opening and closing the opening is provided. The chamber 51 is connected to the chamber 71 (corresponding to an example of a second chamber) of the transfer unit 7 via the gate valve 51a.

[0083] The exhaust unit 52 exhausts the interior of the chamber 51 so that the achieved vacuum of the pressure inside the chamber 51 becomes approximately equal to the pressure inside the chamber 71 of the connection part 7. The exhaust unit 52 may include, for example, a turbo molecular pump (TMP), a pressure control unit (auto pressure controller (APC)), etc. In addition, the so-called achieved vacuum being approximately equal means that the difference in the achieved vacuum of the pressure between the inside of the chamber 51 and the inside of the chamber 71 is within 5×10 -2 Pa.

[0084] The gas supply unit 53 supplies gas to the interior of the chamber 51 so that the pressure inside the chamber 51 becomes approximately equal to the pressure of the transfer unit 4. The supplied gas may be, for example, air or nitrogen.

[0085] The processing unit 6 performs plasma processing on the workpiece 100 in a gas environment where the pressure is reduced from a relatively high pressure.

[0086] The processing unit 6 may be, for example, a plasma etching device, a plasma ashing device, a sputtering device, a plasma chemical vapor deposition (CVD) device, or other plasma processing devices.

[0087] In this case, the method of generating the plasma is not particularly limited. For example, plasma may be generated using high frequency or microwave.

[0088] However, the type of the plasma processing device or the method of generating the plasma is not limited to the examples shown. That is, the processing unit 6 only needs to perform plasma processing on the workpiece 100 in a gas environment where the pressure is reduced from a relatively high pressure.

[0089] In addition, the number of the processing units 6 is not particularly limited. At least one processing unit 6 may be provided. When multiple processing units 6 are provided, the same type of plasma processing device may be provided, or different types of plasma processing devices may be provided. In addition, when multiple plasma processing devices of the same type are provided, the processing conditions may be different from each other, or the processing conditions may be the same.

[0090] Figure 3 It is a schematic cross-sectional view for exemplifying an example of the processing unit 6.

[0091] Figure 3 The processing unit 6 exemplified in

[0092] AsFigure 3 As shown, the processing unit 6 includes, for example: a chamber 61 (an example of the first chamber), a placement unit 62, an antenna 63, a high-frequency power supply 64a, a high-frequency power supply 64b, a gas supply unit 65 (an example of the first gas supply unit), an exhaust unit 66 (an example of the first exhaust unit), and the like.

[0093] The chamber 61 has, for example, a substantially cylindrical shape with a bottom, and has an airtight structure capable of maintaining a gas environment with a relatively high pressure that has been decompressed. At the upper part of the chamber 61, a transmission window 61a is provided in an airtight manner. The transmission window 61a is plate-shaped and can be formed of a material with a high transmittance of high-frequency energy and that is not easily etched during plasma processing. The transmission window 61a can be formed of a dielectric material such as quartz, for example.

[0094] An opening 61b for loading and unloading the workpiece 100 is provided in the side wall of the chamber 61. In addition, a gate valve 61c for opening and closing the opening 61b is provided. The chamber 61 is connected to the chamber 71 of the transfer unit 7 via the gate valve 61c.

[0095] The placement unit 62 is provided inside the chamber 61. The workpiece 100 is placed on the upper surface of the placement unit 62. In this case, the workpiece 100 can be directly placed on the upper surface of the placement unit 62, or can be placed on the placement unit 62 via a support member (not shown) or the like. In addition, a holding device such as an electrostatic chuck can be provided on the placement unit 62.

[0096] The antenna 63 supplies high-frequency energy (electromagnetic energy) to the region where the plasma P is generated inside the chamber 61. The plasma P is generated using the high-frequency energy supplied to the inside of the chamber 61. For example, the antenna 63 supplies high-frequency energy to the inside of the chamber 61 via the transmission window 61a.

[0097] The high-frequency power supply 64a is electrically connected to the antenna 63 via a matcher 64a1. In the matcher 64a1, a matching circuit or the like for matching the impedance on the high-frequency power supply 64a side and the impedance on the plasma P side is provided. The high-frequency power supply 64a is a power supply for generating the plasma P. That is, the high-frequency power supply 64a is provided to generate the plasma P in order to generate high-frequency discharge inside the chamber 61. The high-frequency power supply 64a applies high-frequency power having a frequency of about 100 KHz to 100 MHz to the antenna 63.

[0098] In the present embodiment, the antenna 63 and the high-frequency power supply 64a form a plasma generation unit for generating the plasma P.

[0099] The high-frequency power supply 64b is electrically connected to the mounting section 62 via the matcher 64b1. In the matcher 64b1, a matching circuit or the like for matching the impedance on the high-frequency power supply 64b side with the impedance on the plasma P side is provided. The high-frequency power supply 64b controls the energy of ions introduced into the workpiece 100 mounted on the mounting section 62. The high-frequency power supply 64b applies high-frequency power having a relatively low frequency (e.g., 13.56 MHz or less) suitable for introducing ions to the mounting section 62.

[0100] The gas supply section 65 supplies the process gas G to the region where the plasma P is generated inside the chamber 61 via the flow control section 65a. The flow control section 65a can be, for example, a mass flow controller (MFC) or the like. The gas supply section 65 is connected to, for example, the side wall of the chamber 61 and is near the transmissive window 61a.

[0101] The process gas G is appropriately selected according to the type of processing or the material of the processing surface of the workpiece 100, etc. For example, in the case of an etching process, it can be a process gas G containing fluorine atoms such as CF 4 or CF 3 etc., in order to generate highly reactive radicals. In this case, the process gas G can be, for example, a gas containing only fluorine atoms, or a mixed gas of a gas containing fluorine atoms and a noble gas.

[0102] The exhaust section 66 decompresses the inside of the chamber 61 to a specified pressure. The exhaust section 66 can be, for example, a turbo molecular pump (TMP). The exhaust section 66 can be connected to the bottom surface of the chamber 61 via the pressure control section 66a. The pressure control section 66a controls based on the output of a pressure gauge (not shown) that detects the pressure inside the chamber 61 so that the inside of the chamber 61 becomes the specified pressure. The pressure control section 66a can be, for example, an auto pressure controller (APC) or the like.

[0103] When performing plasma processing on the workpiece 100, the inside of the chamber 61 is decompressed to a specified pressure by the exhaust section 66, and a specified amount of the process gas G (e.g., CF 4 etc.) is supplied from the gas supply section 65 to the region where the plasma P is generated inside the chamber 61. On the other hand, high-frequency power of a specified power is applied from the high-frequency power supply 64a to the antenna 63, and electromagnetic energy is radiated into the chamber 61 via the transmissive window 61a. In addition, high-frequency power of a specified power is applied from the high-frequency power supply 64b to the mounting section 62 on which the workpiece 100 is mounted, forming an electric field that accelerates ions from the plasma P toward the workpiece 100.

[0104] Plasma P is generated by electromagnetic energy radiated into the interior of chamber 61. Through the generated plasma P, process gas G is excited and activated to generate plasma products such as neutral active species and ions. Then, by supplying the generated plasma products to workpiece 100, plasma processing is performed on workpiece 100.

[0105] In addition, above, as an example of the processing unit, an inductively coupled plasma (ICP) processing apparatus has been described, but the processing unit is not limited to these plasma processing apparatuses. For example, the processing unit may also be a capacitively coupled plasma (CCP) processing apparatus (e.g., a parallel plate type (reactive ion etching (RIE)) apparatus), etc. Or, it may also be a microwave-excited plasma processing apparatus (e.g., a remote plasma apparatus (chemical dry etching (CDE) apparatus), a surface wave plasma (SWP) apparatus, etc.). In addition, known techniques can be applied to the basic structures of other plasma processing apparatuses, so detailed descriptions are omitted.

[0106] Next, transfer section 7 will be described.

[0107] As Figure 1 shown, transfer section 7 is provided between processing unit 6 and load lock section 5. Transfer section 7 transfers workpiece 100 between processing unit 6 and load lock section 5.

[0108] Figure 4 is a schematic cross-sectional view for illustrating transfer section 7.

[0109] In addition, Figure 4 is Figure 1 a cross-sectional view taken along line A-A of transfer section 7 in

[0110] As Figure 4 shown, transfer section 7 includes: chamber 71, transfer unit 72, exhaust unit 73 (equivalent to an example of a second exhaust unit), and gas supply unit 74 (equivalent to an example of a second gas supply unit).

[0111] Chamber 71 has an airtight structure capable of maintaining a gas environment with a relatively large pressure after decompression. Chamber 71 is connected to chamber 61 via gate valve 61c.

[0112] The transfer unit 72 is disposed inside the chamber 71. The transfer unit 72 transfers the workpiece 100 between the processing unit 6 and the load lock unit 5. For example, the transfer unit 72 transfers (loads and unloads) the workpiece 100 between the chamber 61 of the processing unit 6. The transfer unit 72 can be, for example, a transfer robot (e.g., an articulated robot) having an arm for holding the workpiece 100.

[0113] The exhaust unit 73 reduces the pressure inside the chamber 71 to a specified pressure. The exhaust unit 73 can be connected to the bottom surface of the chamber 71 via the pressure control unit 66a, for example.

[0114] The exhaust unit 73 can be, for example, the same as the exhaust unit 66 described above.

[0115] The pressure control unit 66a controls based on the output of a pressure gauge (not shown) that detects the pressure inside the chamber 71 so that the pressure inside the chamber 71 becomes the specified pressure.

[0116] Here, as described above, among the process gases G used in plasma processing, there are, for example, highly reactive gases such as those containing fluorine atoms. If a highly reactive gas flows from the inside of the chamber 61 of the processing unit 6 to the inside of the chamber 71 of the transfer unit 7, there is a risk that the highly reactive gas reacts with the elements exposed inside the chamber 71 to generate contaminants.

[0117] In addition, sometimes by-products generated during plasma processing adhere to the inner wall of the chamber 61 of the processing unit 6 or the elements exposed inside the chamber 61. Therefore, if an air flow is formed that flows from the inside of the chamber 61 of the processing unit 6 toward the inside of the chamber 71 of the transfer unit 7, there is a risk that the by-products peeled off from the inner wall of the chamber 61 of the processing unit 6 and the like invade the inside of the chamber 71 of the transfer unit 7 along with the air flow. The by-products that invade the inside of the chamber 71 of the transfer unit 7 become contaminants for the workpiece 100.

[0118] Therefore, when loading the workpiece 100 into the chamber 61 of the processing unit 6 or unloading the workpiece 100 from the chamber 61 of the processing unit 6, the exhaust unit 73 and the pressure control unit 66a installed in the chamber 71 cooperate to make the pressure inside the chamber 71 substantially equal to the pressure inside the chamber 61 of the processing unit 6. For example, the pressure inside the chamber 61 of the processing unit 6 can be set to about 1×10 -3 Pa to 1×10 -2 Pa.

[0119] In this case, the pressure inside the chamber 71 of the transfer unit 7 being substantially equal to the pressure inside the chamber 61 of the processing unit 6 means that the pressure inside the chamber 71 is from the same pressure as the pressure inside the chamber 61 to 5×10 -2The range of the pressure in Pa. If so, it is possible to effectively suppress the intrusion of highly reactive gases or by-products into the interior of the chamber 71 of the transfer section 7.

[0120] In addition, if the pressure inside the chamber 71 is too high, there is a risk that by-products adhering to the inner wall of the chamber 61 will be peeled off or the by-products will float inside the chamber 61 due to the air flow from the chamber 71 toward the chamber 61 of the processing section 6. Therefore, when loading and unloading the workpiece 100 from the processing section 6, the pressure inside the chamber 71 is preferably set to 8×10 -3 Pa to 5×10 -2 Pa or so. In addition, the pressure inside the chamber 71 of the transfer section 7 is determined to be slightly higher than the pressure inside the chamber 61 of the processing section 6 within the above pressure range.

[0121] The pressure control of the chamber 71 can be performed by the exhaust section 73 and the pressure control section 66a, but it is difficult to rapidly increase the lowered pressure.

[0122] Therefore, as Figure 4 shown, a gas supply section 74 is provided in the transfer section 7 of the present embodiment.

[0123] The gas supply section 74 supplies the gas G1 to the interior of the chamber 71 via the flow control section 74a. The flow control section 74a can be set as, for example, a mass flow controller (MFC) or the like.

[0124] The gas G1 can be set as, for example, a gas that does not easily react with the workpiece 100 or the components exposed to the interior of the chamber 71. For example, the gas G1 can be set as a noble gas such as nitrogen or argon, or a mixed gas thereof.

[0125] In addition, since the gas G1 is supplied to control the pressure inside the chamber 71 and the amount of pressure control is small, the amount of the gas G1 supplied to the interior of the chamber 71 is small. For example, the flow rate of the gas G1 is 10 sccm or more and 1000 sccm or less.

[0126] The workpiece 100 is transferred from the storage section 3 to the interior of the processing section 6 via the load lock section 5 and the transfer section 7. The workpiece 100 transferred to the interior of the processing section 6 is subjected to plasma processing. The workpiece 100 that has been subjected to plasma processing returns to the storage section 3 via the load lock section 5 and the transfer section 7. Then, the next workpiece 100 is similarly subjected to plasma processing. By performing the above operation with the plasma processing apparatus 1, the processing of the workpiece 100 proceeds.

[0127] Incidentally, if plasma processing is repeatedly performed, there is a risk of generating particles from the reaction products generated by the plasma processing. If the generated particles fall onto the surface of the workpiece and adhere to the surface of the workpiece, the yield will decrease.

[0128] In addition, particles are not necessarily generated only in the process chamber. For example, they are generated by the operation of the transfer robot in the transfer chamber, or mixed in when the workpiece is transferred from the external space into the load lock chamber, or also generated by the opening and closing operation of the gate valve connecting the chambers to each other.

[0129] Therefore, it is necessary to periodically check whether particles are generated in the plasma processing apparatus 1.

[0130] Next, a method for inspecting the plasma processing apparatus 1 will be described.

[0131] Figure 5 is a timing chart showing the supply of the gas G1 when inspecting the plasma processing apparatus including the first particle measurement step. In addition, when performing the particle measurement step, the operator operates an input device such as the operation panel of the controller 2 to switch the control mode of the plasma processing apparatus 1 to the inspection mode (particle measurement mode). In the inspection mode, an operation corresponding to the inspection target can also be selected. For example, an operation for measuring particles in the processing unit 6, an operation for measuring particles in the transfer unit 7, etc. can be selected. Figure 5 The example is an example in which an operation for measuring particles in the processing unit 6 is selected.

[0132] Figure 5 T1 in is the timing when the workpiece 100 starts to be transferred from the chamber 71 of the transfer unit 7 to the chamber 61 of the processing unit 6.

[0133] Figure 5 T2 in is the timing when the workpiece 100 starts to be transferred out from the chamber 61 of the processing unit 6 to the chamber 71 of the transfer unit 7.

[0134] When there is no workpiece 100 to be processed, the plasma processing apparatus 1 is in a standby state. When the plasma processing apparatus 1 is in the standby state, the inside of the chamber 51 of the load lock unit 5 is evacuated by the evacuation unit 52 and maintained at a pressure of about 1×10 -2 Pa to 1×10 -1 Pa. In the present embodiment, for example, it is 5×10 -2 Pa.

[0135] The pressure inside the chamber 71 of the transfer unit 7 is maintained at 5×10 16 H 30 O 4 a pressure of 5×10 -3 Pa or more that can suppress the evaporation of the component. Specifically, the controller 2 controls the pressure control unit 66a installed in the chamber 71 based on the output of a pressure gauge (not shown) that detects the pressure inside the chamber 71 so that the pressure inside the chamber 71 becomes 5×10-3 A pressure of Pa or higher.

[0136] The inside of the chamber 61 of the processing unit 6 is evacuated by the evacuation unit 66 and maintained at a pressure of 1×10 -3 Pa to 1×10 -2 Pa. In this embodiment, for example, it is 1×10 -3 Pa.

[0137] When inspecting the plasma processing apparatus 1, the inside of the chamber 51 of the load interlock unit 5 is discharged so that the pressure inside the chamber 51 becomes the same as the atmospheric pressure. The transfer unit 4 takes out the inspection wafer 100a located inside the storage unit 3 and transfers it into the chamber 51 of the load interlock unit 5 ( Figure 5 of (1)). That is, the controller 2 controls the transfer unit 4 to take out the inspection wafer 100a from the storage position of the inspection wafers pre-stored in the storage unit 3 by switching to the inspection mode.

[0138] After the inspection wafer 100a is transferred into the chamber 51, the inside of the chamber 51 is decompressed. When the inside of the chamber 51 is decompressed to a specified pressure, gas G1 is supplied from the gas supply unit 74 into the chamber 71 so that the pressure inside the chamber 71 is 1×10 -1 Pa or higher. In addition, the specified pressure is a pressure of 1×10 -2 Pa or higher and less than 1×10 -1 Pa. In this embodiment, for example, it is 5×10 -2 Pa.

[0139] When the pressure inside the chamber 51 and the pressure inside the chamber 71 reach the above-mentioned pressure, the gate valve 51a is opened. Then, the inspection wafer 100a is transferred into the chamber 71 by the transfer unit 72 ( Figure 5 of (2)).

[0140] The chamber 51 communicates with the space outside the plasma processing apparatus 1. Therefore, when the inspection wafer 100a is transferred, the air in the external space is taken into the chamber 51. There is a risk that the air in the external space contains water vapor or particles. By setting the pressure inside the chamber 71 to be higher than the pressure inside the chamber 51, it is possible to suppress the inflow of water vapor or particles from the chamber 51 into the chamber 71.

[0141] After the inspection wafer 100a is transferred into the chamber 71, the gate valve 51a is closed. After the gate valve 51a is closed, the supply of gas G1 into the chamber 71 stops. In addition, the decompression inside the chamber 51 is maintained.

[0142] When the pressure inside the chamber 71 becomes, for example, 5×10-2 After reaching Pa, open the gate valve 61c. Then, use the transfer unit 72 to transfer the inspection wafer 100a into the interior of the chamber 61 ( Figure 5 at T1).

[0143] Inside the chamber 61 of the processing unit 6, plasma products are generated from a highly reactive gas using plasma, and the workpiece 100 is processed. Therefore, a highly reactive gas sometimes remains inside the chamber 61, or by-products generated during plasma processing sometimes adhere to the inner wall of the chamber 61 of the processing unit 6, etc. If the pressure inside the chamber 71 is made substantially equal to the pressure inside the chamber 61 of the processing unit 6, intrusion of a highly reactive gas or by-products into the interior of the chamber 71 of the transfer section 7 can be suppressed.

[0144] After the inspection wafer 100a is transferred into the interior of the chamber 61, close the gate valve 61c. The period from when the gate valve 61c is opened to when it is closed is defined as the transfer period T1a of the inspection wafer 100a. After the gate valve 61c is closed, gas G1 is supplied from the gas supply unit 74 to the interior of the chamber 71. Thereby, the pressure inside the chamber 71 is maintained at 1×10 -1 Pa or higher.

[0145] After the pressure inside the chamber 61 is reduced to a specified pressure, control the gas supply unit 65 to supply the process gas G until the pressure inside the chamber 61 becomes the pressure for plasma processing. The pressure for plasma processing is about 1×10 - 1 Pa to 10 Pa. In this embodiment, for example, it is 1 Pa. In addition, the so-called specified pressure is 1×10 -3 Pa to 1×10 - 2 Pa.

[0146] After the pressure inside the chamber 61 becomes the pressure for plasma processing, apply a high-frequency voltage from the high-frequency power supply 64a to the antenna 63 to generate plasma P. Then, maintain the plasma P for the same time as the time for processing the workpiece 100.

[0147] After the plasma processing is completed, stop the application of the high-frequency voltage from the high-frequency power supply 64a and the supply of the process gas G. The interior of the chamber 61 is evacuated to a pressure of 1×10 -3 Pa to 1×10 -2 Pa. In this embodiment, the pressure inside the chamber 61 is evacuated to, for example, 1×10 -3 Pa.

[0148] When the pressure inside the chamber 61 becomes 1×10 -3After Pa, the supply of the gas G1 from the gas supply unit 74 is stopped. Then, when the pressure inside the chamber 71 becomes, for example, 5×10 -2 Pa, the gate valve 61c is opened. The inspection wafer 100a is taken out from the inside of the chamber 61 by the transfer unit 72 ( Figure 5 at T2).

[0149] After the inspection wafer 100a is transferred into the chamber 71 by the transfer unit 72, the gate valve 61c is closed. The period from when the gate valve 61c is opened until it is closed is defined as the take-out period T2a of the inspection wafer 100a. After the take-out period T2a, the gas G1 is supplied from the gas supply unit 74 into the chamber 71.

[0150] When the pressure inside the chamber 71 becomes 1×10 -1 Pa or more, the gate valve 51a is opened, and the inspection wafer 100a is transferred into the chamber 51 by the transfer unit 72 ( Figure 5 of (4)).

[0151] After the inspection wafer 100a is transferred into the chamber 51, the gate valve 51a is closed. In the transfer section 7, the supply of the gas G1 into the chamber 71 is stopped. The pressure inside the chamber 71 is maintained at 1×10 -2 Pa or more by reducing the exhaust volume of the exhaust unit 73 using the pressure control unit 66a installed in the chamber 71. Alternatively, the pressure inside the chamber 71 is maintained at 1×10 -2 Pa or more by adjusting the flow rate of the gas G1. In the load interlock section 5, the inside of the chamber 51 is evacuated so that the pressure inside the chamber 51 becomes atmospheric pressure. When the pressure inside the chamber 51 becomes approximately the same as the atmospheric pressure, the inspection wafer 100a is taken out from the inside of the chamber 51 by the transfer unit 4 and stored in the original storage position in the storage unit 3 ( Figure 5 of (5)). Then, the number of particles attached to the inspection wafer 100a is measured. For example, in a state where the inspection wafer 100a is placed in the storage unit 3, it is transferred to a particle measurement device (not shown), and the number of particles attached to the inspection wafer 100a is measured using the particle measurement device.

[0152] As described above, during the carry-in period T1a of the inspection wafer 100a after T1 and the carry-out period T2a of the inspection wafer 100a after T2, the pressure in the transfer section 7 is temporarily set to a pressure included in the region below the vapor pressure curve of Figure 2 . Specifically, when the gate valve 61c is opened, the gas inside the chamber 71 flows into the processing section 6. Therefore, the pressure inside the chamber 71 is reduced to the pressure inside the chamber 61 of the processing section 6 (for example, a specified pressure of 1×10 immediately before plasma processing)-3 Pa) are approximately the same. Therefore, during the loading period T1a and the unloading period T2a, the components of the sealing member evaporate and are released into the interior of the chamber 71. In addition, the so-called "approximately the same" here means that the pressure inside the chamber 71 is within the range from the same pressure as the pressure inside the chamber 61 to a pressure 5×10 -2 Pa higher than the same pressure as the pressure inside the chamber 61.

[0153] However, after the loading period T1a and the unloading period T2a have passed, the gate valve 61c locks the chamber 71 of the transfer section 7 and the chamber 61 of the processing section 6. Then, the gas G1 is supplied into the interior of the chamber 71 of the transfer section 7 through the gas supply section 74, and the pressure inside the chamber 71 is made 5×10 -3 Pa or more, preferably 1×10 -1 Pa or more. Therefore, the evaporation of the components of the sealing member can be suppressed.

[0154] In addition, even if the pressures inside the chamber 71 of the transfer section 7 and the chamber 61 of the processing section 6 are set below the pressure at which the components of the sealing member can evaporate, by introducing gas into the transfer section 7, the attachment of contaminants (the evaporated components of the sealing member) to the inspection wafer 100a can be suppressed. The interiors of the chamber 71 and the chamber 61 are evacuated to maintain a prescribed reduced-pressure gas environment. The exhaust speeds (L / min) of the exhaust section 73 and the exhaust section 66 have been determined. Then, when the gas G1 is supplied into the interiors of the chamber 71 and the chamber 61, the pressure inside the chamber 71 rises, and the amount of the discharged gas G1 per unit volume increases. As a result, it appears that the interior of the chamber is evacuated corresponding to the amount of the supplied gas G1. That is, through the above exhaust, the contaminants can be discharged together with the gas G1.

[0155] As described above, the attachment of contaminants that cause water marks to the inspection wafer 100a can be suppressed. Therefore, water marks can be prevented from being misrecognized as particles, and thus the measurement of particles can be accurately performed.

[0156] In addition, as can be seen from Figure 5 it is possible to shorten the period during which the pressure inside the chamber 71 is reduced to a pressure approximately the same as the pressure inside the chamber 61 of the processing section 6, which is below the pressure at which the components of the sealing member can evaporate. Therefore, the evaporation of the components of the sealing member can be suppressed.

[0157] In order to measure the number of particles attached to the inspection wafer 100a, when the state where there is no processed object 100 inside the chamber 71 continues for a long time, the pressure control section 66a installed in the chamber 71 can also be controlled to reduce the exhaust volume of the exhaust section 73. By reducing the exhaust volume of the exhaust section 73, the amount of reducing the pressure inside the chamber 71 to 1×10 -2The amount of the gas G1 required at Pa or above. In addition, the duration during which the interior of the chamber 71 is in a state without the workpiece 100 is, for example, the time from when the supply of the gas G1 is stopped until the pressure inside the chamber 71 becomes 1×10 -2 Pa.

[0158] Using Figure 5 the gas G1 supply method shown, an inspection method for the plasma processing apparatus 1 including the first particle measurement process for measuring particles is performed. If no particles are detected, the processing of the workpiece 100 is started. In the case where particles are detected, the plasma processing apparatus 1 is inspected using Figure 6 the gas G1 supply method shown.

[0159] Figure 6 is a timing chart for exemplifying the supply of the gas G1 during the inspection of the plasma processing apparatus including the second particle measurement process. Figure 6 Exemplifying the supply of the gas G1 when the inspection wafer 100a is transported to the transfer section 7 and then returned to the load lock section 5 without being transported into the processing section 6. That is, Figure 6 the example of

[0160] Figure 6 is an example where the operation of measuring particles in the transfer section 7 is selected in the inspection mode. Figure 5 of (1) is the same as Figure 6 of (1), Figure 5 and of (2) is the same as

[0161] so the description thereof is omitted.

[0162] After the inspection wafer 100a is transported into the chamber 71, the gate valve 51a is closed. The inspection wafer 100a stays inside the chamber 71 for several tens of seconds, for example. In order to approximate the conditions for actually processing the workpiece 100, the time for which the inspection wafer 100a stays inside the chamber 71 is preferably set to be the same as the time for plasma processing using the processing section 6. During the period when the inspection wafer 100a stays inside the chamber 71, the supply of the gas G1 from the gas supply section 74 is maintained. Figure 6 of (4)).

[0163] After the inspection wafer 100a is transported into the chamber 51, the gate valve 51a is closed. In the transfer section 7, the supply of the gas G1 into the chamber 71 is stopped. The pressure inside the chamber 71 is maintained at 1×10 by reducing the exhaust volume of the exhaust section 73 using the pressure control section 66a installed in the chamber 71 -2Above Pa. In the load interlock unit 5, the inside of the chamber 51 is evacuated so that the pressure inside the chamber 51 becomes atmospheric pressure. After the pressure inside the chamber 51 becomes approximately the same as the atmospheric pressure, the inspection wafer 100a is taken out from the inside of the chamber 51 by the transfer unit 4 and stored in the storage unit 3( Figure 6 of (5)). Then, the number of particles attached to the inspection wafer 100a is measured using a particle measuring device (not shown).

[0164] Gas G1 is supplied into the chamber 71 of the transfer unit 7 through the gas supply unit 74 so that the pressure inside the chamber 71 is set to 5×10 -3 Pa or more, preferably 1×10 -1 Pa or more. Thus, evaporation of the components of the sealing member can be suppressed. Thus, contaminants that cause water marks can be prevented from adhering to the inspection wafer 100a. Thus, water marks can be prevented from being misidentified as particles, and thus particle measurement can be accurately performed.

[0165] Using Figure 6 the gas G1 supply method shown, for the inspection method of the plasma processing apparatus 1 including the second particle measurement process for measuring particles, if no particles are detected, cleaning inside the processing unit 6 is started. If particles are detected, cleaning inside the load interlock unit 5 is started.

[0166] After cleaning inside the load interlock unit 5 is performed, an inspection method of the plasma processing apparatus 1 using Figure 6 the gas G1 supply method shown is implemented. If particles are detected again during the inspection, cleaning inside the transfer unit 7 is started.

[0167] The above sequence can be performed, for example, by the controller 2 controlling the transfer unit 72, the exhaust unit 73, and the gas supply unit 74.

[0168] For example, when the transfer unit 72 transfers (loads and unloads) the inspection wafer 100a, the controller 2 controls the exhaust unit 73 so that the pressure inside the chamber 71 becomes approximately the same as the pressure inside the chamber 61. For example, when the transfer of the inspection wafer 100a by the transfer unit 72 is completed, the controller 2 controls the gas supply unit 74 to supply gas G1 into the chamber 71.

[0169] For example, the controller 2 makes the pressure inside the chamber 71 higher than the pressure inside the chamber 61 by supplying gas G1.

[0170] For example, the controller 2 makes the pressure inside the chamber 71 5×10 -3 Pa or more, preferably 1×10 -1 Pa or more by supplying gas G1.

[0171] In addition, as described above, the inspection method of the plasma processing apparatus according to the present embodiment may include the following steps.

[0172] An inspection method of a plasma processing apparatus, the plasma processing apparatus including: a first chamber that maintains a gas environment with a relatively high pressure reduced, and is capable of placing a workpiece therein; a first exhaust unit that can reduce the pressure inside the first chamber to a specified pressure; a plasma generation unit that can generate the plasma; a first gas supply unit that can supply a process gas to the inside of the first chamber and to a region where the plasma is generated; a second chamber that is connected to the first chamber via a gate valve and can maintain a gas environment with a relatively high pressure reduced; a transfer unit that is provided inside the second chamber and can transfer the workpiece between the first chamber; a second exhaust unit that can reduce the pressure inside the second chamber to a specified pressure; a second gas supply unit that can supply a gas to the inside of the second chamber; and a controller that can control the transfer unit, the second exhaust unit, and the second gas supply unit. The inspection method of the plasma processing apparatus includes a first particle measurement step, the first particle measurement step including: when transferring an inspection wafer from the second chamber to the first chamber using the transfer unit, controlling the second exhaust unit so that the pressure inside the second chamber becomes substantially equal to the pressure inside the first chamber; when the transfer of the inspection wafer to the first chamber using the transfer unit is completed, controlling the second gas supply unit to supply the gas to the inside of the second chamber; a step of performing plasma processing in the first chamber into which the inspection wafer has been loaded; when transferring the inspection wafer from the first chamber to the second chamber using the transfer unit, controlling the second exhaust unit so that the pressure inside the second chamber becomes substantially equal to the pressure inside the first chamber; when the transfer of the inspection wafer to the second chamber using the transfer unit is completed, controlling the second gas supply unit to supply the gas to the inside of the second chamber; and a step of measuring particles adhering to the inspection wafer unloaded from the second chamber.

[0173] For example, it further includes the following steps: when transferring the inspection wafer from the outside to the second chamber via a load lock unit, after supplying the gas to the second chamber to become a specified reduced pressure state, transferring the inspection wafer from the load lock unit to the second chamber.

[0174] For example, it further includes a second particle measurement process, and the second particle measurement process includes: when transferring the test wafer from the outside to the second chamber via the load interlock unit, after supplying the gas to the second chamber to reach a specified reduced pressure state, a process of transferring the test wafer from the load interlock unit to the second chamber; a process of stopping the test wafer in the second chamber after transferring the test wafer from the load interlock unit to the second chamber; a process of transferring the test wafer from the second chamber to the load interlock unit without transferring the test wafer to the first chamber; and a process of measuring the particles attached to the test wafer.

[0175] For example, when implementing the first particle measurement process and detecting particles, the second particle measurement process is implemented.

[0176] For example, when implementing the second particle measurement process and not detecting particles, the first particle measurement process is implemented.

[0177] For example, by supplying the gas, the pressure inside the second chamber is made 5×10 -3 Pa or more.

[0178] In addition, since the content of each process can be set to be the same as that described above, detailed descriptions are omitted.

[0179] The above has illustrated the present embodiment. However, the present invention is not limited to these descriptions.

[0180] Embodiments obtained by appropriately applying design changes to the above-described embodiments by those skilled in the art are also included in the scope of the present invention as long as they have the features of the present invention.

[0181] For example, the shape, size, material, configuration, quantity, etc. of each element included in the plasma processing apparatus 1 are not limited to the illustration and can be appropriately changed.

[0182] In addition, the elements included in the above-described embodiments can be combined as much as possible, and embodiments obtained by combining these are also included in the scope of the present invention as long as they have the features of the present invention.

[0183] The inspection method of the plasma processing apparatus 1 is not limited to the above. For example, when a defect caused by particles occurs in a subsequent process, the inspection of the plasma processing apparatus 1 can also first be performed by the inspection method of the plasma processing apparatus 1 using the gas supply method as Figure 6 shown.

[0184] When particles are detected in the inspection, the inside of the load interlock unit 5 is cleaned. Then, after cleaning the inside of the load interlock unit 5, the implementation usingFigure 6 Inspection method of the plasma processing apparatus 1 for the supply method of the gas G1 shown. When particles are detected again during the inspection, cleaning inside the transfer portion 7 is started.

[0185] In addition, when no particles are detected in the initial Figure 6 inspection, particles are generated somewhere between the transfer portion 7 and the processing portion 6. In this case, before performing the inspection of the plasma processing apparatus 1 for the supply method of the gas G1 shown, the following inspection may also be performed. Figure 5

[0186] For example, the gas supply unit 65 may be controlled to supply the process gas G into the chamber 61 until the pressure for performing plasma processing is reached, and then the inspection wafer 100a is returned to the transfer portion 7. For example, after the inspection wafer 100a is carried into the chamber 61, the inspection wafer 100a may be returned to the transfer portion 7. Thereby, the part where particles are generated can be determined.

[0187] In the present embodiment, the pressure control unit 66a installed in the chamber 71 is used for control so that the pressure inside the chamber 71 is maintained at 5×10 -3 Pa or more. However, it is not limited thereto. For example, the exhaust unit 73 may be a combination of a turbo molecular pump and a dry pump, and an exhaust port connected to the dry pump may be provided at the bottom of the chamber 71. When there is no processing object 100 inside the chamber 71 for a long time, the inside of the chamber 71 may be exhausted using the dry pump. Or, the exhaust unit 73 may be stopped when it reaches 5×10 -3 Pa.​

Claims

1. A method for inspecting a plasma processing apparatus, the plasma processing apparatus comprising: a first chamber that maintains a gas environment with a relatively high pressure reduced, capable of placing a workpiece therein, and performing processing on the workpiece by plasma products generated in a plasma generation region; a first exhaust unit capable of reducing the pressure inside the first chamber to a specified pressure; a plasma generation unit capable of generating the plasma in the plasma generation region; a first gas supply unit that supplies a process gas to the plasma generation region; a second chamber connected to the first chamber via a gate valve and capable of maintaining a gas environment with a relatively high pressure reduced; a transfer unit disposed inside the second chamber and capable of transferring the workpiece between the second chamber and the first chamber; a second exhaust unit capable of reducing the pressure inside the second chamber to a specified pressure; a second gas supply unit capable of supplying gas to the inside of the second chamber; and a controller capable of controlling the transfer unit, the second exhaust unit, and the second gas supply unit, and the method for inspecting the plasma processing apparatus includes a first particle measurement step, the first particle measurement step including: a step of controlling the second exhaust unit to make the pressure inside the second chamber substantially equal to the pressure inside the first chamber when transferring an inspection wafer from the second chamber to the first chamber by using the transfer unit; When the transfer of the inspection wafer to the first chamber using the transfer unit is completed, close the gate valve, control the second gas supply unit, and supply the gas to the inside of the second chamber to maintain the pressure inside the second chamber at 1×10 -1 Pa or more; a step of performing plasma processing in the first chamber into which the inspection wafer has been loaded; a step of controlling the second exhaust unit to make the pressure inside the second chamber substantially equal to the pressure inside the first chamber when transferring the inspection wafer from the first chamber to the second chamber by using the transfer unit; a step of controlling the second gas supply unit to supply the gas to the inside of the second chamber when the transfer of the inspection wafer to the second chamber by using the transfer unit is completed; and a step of measuring particles attached to the inspection wafer taken out of the second chamber.

2. The method for inspecting a plasma processing apparatus according to claim 1, further including the following steps: a step of transferring the inspection wafer from the load lock unit to the second chamber after supplying the gas to the second chamber to a specified reduced pressure state when transferring the inspection wafer from the outside to the second chamber via the load lock unit.

3. The method for inspecting a plasma processing apparatus according to claim 1, further including a second particle measurement step, the second particle measurement step including: a step of transferring the inspection wafer from the load lock unit to the second chamber after supplying the gas to the second chamber to a specified reduced pressure state when transferring the inspection wafer from the outside to the second chamber via the load lock unit; a step of stopping the inspection wafer in the second chamber after transferring the inspection wafer from the load lock unit to the second chamber; The step of transporting the inspection wafer to the load lock section from the second chamber without transporting it to the first chamber; and The step of measuring particles adhering to the inspection wafer.

4. The inspection method of the plasma processing apparatus according to claim 3, wherein The first particle measurement step is implemented, and when particles are detected, the second particle measurement step is implemented.

5. The inspection method of the plasma processing apparatus according to claim 3, wherein The second particle measurement step is implemented, and when no particles are detected, the first particle measurement step is implemented.

6. The inspection method of the plasma processing apparatus according to any one of claims 1 to 5, wherein By supplying the gas, the pressure inside the second chamber is 5×10 -3 Pa or more.

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