A hafnium oxide-based resistive random access memory and its preparation method and application

Abstract

The present application belongs to the field of semiconductor technology, and in particular relates to a hafnium oxide-based resistive random access memory, its preparation method, and application. The hafnium oxide-based resistive random access memory provided by the present application has a higher ratio of high resistance to low resistance than a hafnium oxide-based resistive random access memory not doped with lanthanum, and has an excellent bipolar resistive random access effect. This indicates that the hafnium oxide-based resistive random access memory provided by the present application improves the switching ratio of the hafnium oxide-based resistive random access memory by doping lanthanum into the hafnium oxide thin film of the resistive random access functional layer, while also improving the cyclic erase and write stability of the hafnium oxide-based resistive random access memory. The hafnium oxide-based resistive random access memory provided by the present application solves the technical problem that the storage performance of existing resistive random access memories still needs to be improved.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and in particular relates to a hafnium oxide-based resistive random access memory and a preparation method and application thereof. Background Art

[0002] Currently, the most widely used information storage device is silicon-based floating gate flash memory. With the development of information technology, various electronic products have put forward increasingly higher requirements for information storage devices. In order to meet the information storage requirements, the size of silicon-based floating gate flash memory is constantly shrinking. As the size shrinks, silicon-based floating gate flash memory cannot effectively store charge.

[0003] Resistive random access memory (RRAM) is a new type of information storage device that can record and store data information by using changes in resistance. It has the advantages of simple structure, fast read and write speeds, and high storage density. Its information storage performance is significantly higher than that of traditional silicon-based floating gate flash memory. At the same time, RRAM is also compatible with silicon integrated circuit processes. Therefore, RRAM is gradually replacing traditional silicon-based floating gate flash memory as an information storage device for various electronic products. The resistive random access memory (RRAM) functional layer often uses thin films such as hafnium oxide. However, the storage performance of RRAM using hafnium oxide thin films as the resistive random access functional layer still needs to be improved. Summary of the Invention

[0004] In view of this, the present application provides a hafnium oxide-based resistive random access memory and a preparation method and application thereof, which are used to solve the technical problem that the storage performance of existing resistive random access memories needs to be improved.

[0005] In a first aspect, the present application provides a hafnium oxide-based resistive switching memory, comprising: a substrate, a bottom electrode, a resistive switching functional layer, a first top electrode and a second top electrode;

[0006] The bottom electrode covers the surface of the substrate;

[0007] The resistive switching functional layer covers the surface of the bottom electrode facing away from the substrate;

[0008] The first top electrode is arranged on a surface of the bottom electrode facing away from the substrate;

[0009] The second top electrode is arranged on a surface of the resistive switching functional layer facing away from the substrate;

[0010] The resistive switching functional layer is a lanthanum-doped hafnium oxide film.

[0011] Preferably, the mass fraction of lanthanum in the lanthanum-doped hafnium oxide film is 0-20%.

[0012] Preferably, the mass fraction of lanthanum in the lanthanum-doped hafnium oxide film is 10%.

[0013] It should be noted that when the lanthanum doping amount is 10%, the hafnium oxide-based resistive random access memory not only has a large switching ratio, but also the switching ratio can remain stable after 100 cycles, and the retention time reaches 10 3 s, indicating that when the lanthanum doping amount is 10%, the performance of the hafnium oxide-based resistive random access memory can be significantly improved.

[0014] Preferably, the substrate is selected from conductive glass, platinum, silicon wafer or mica.

[0015] Preferably, the bottom electrode is selected from lanthanum nickelate, strontium ruthenate, lanthanum ruthenate, lanthanum manganate or strontium manganate.

[0016] Preferably, the first top electrode and the second top electrode are selected from Au, Pt, Al or TiN;

[0017] The first top electrode and the second top electrode are made of the same material.

[0018] A second aspect of the present application provides a method for preparing a hafnium oxide-based resistive random access memory, comprising the steps of:

[0019] Step 1: Spin-coating a bottom electrode precursor solution on a substrate surface and performing a first annealing to obtain a bottom electrode covering the substrate surface;

[0020] Step 2: spin-coating a resistive switching functional layer precursor solution on the surface of the bottom electrode, and performing a second annealing to obtain a resistive switching functional layer covering the surface of the bottom electrode;

[0021] Step 3: depositing a first electrode and a second electrode on the surface of the bottom electrode and the surface of the resistive switching functional layer by magnetron sputtering;

[0022] In step 1, the first annealing temperature is 600-900° C. and the time is 10-20 minutes;

[0023] In step 2, the second annealing temperature is 600-900° C. and the time is 10-20 minutes;

[0024] In step 3, before the magnetron sputtering, a mask having the shapes of the first electrode and the second electrode is placed above the bottom electrode and the resistive switching functional layer.

[0025] It should be noted that there is no special regulation on the shapes of the first electrode and the second electrode. Magnetron sputtering is carried out using a vacuum coating machine. After covering the mask plate, the first electrode can be deposited on the surface of the bottom electrode while the second electrode can be deposited on the surface of the resistive functional layer.

[0026] Preferably, in step 1, the spin coating of the bottom electrode precursor solution comprises: spin coating the bottom electrode precursor solution at a first rotation speed and then spin coating at a second rotation speed;

[0027] The first speed is 600-1000 rpm, the time is 10-60s, and the second speed is 2000-4000 rpm, the time is 10-60s;

[0028] In step 2, the spin coating of the resistive switching functional layer precursor solution includes: spin coating the resistive switching functional layer precursor solution at a third rotation speed and then spin coating at a fourth rotation speed;

[0029] The third rotation speed is 600-1000 rpm, and the time is 10-60s. The fourth rotation speed is 2000-4000 rpm, and the time is 10-60s.

[0030] It should be noted that by first spin coating at a low speed and then at a high speed, the bottom electrode precursor solution and the resistive switching functional layer precursor solution can be evenly distributed on the substrate surface and the bottom electrode surface, which is beneficial to further improve the storage performance of the hafnium oxide-based resistive switching memory.

[0031] Preferably, after the spin coating in step 1 and before the first annealing, a first baking is further included, wherein the temperature of the first baking is 300-400° C. and the time is 10-15 minutes;

[0032] After the spin coating in step 2 and before the second annealing, a second baking is also included. The second baking includes: first baking at a temperature of 150-200° C. for 10-15 minutes, and then baking at a temperature of 300-400° C. for 10-15 minutes.

[0033] It should be noted that baking at low temperature first and then at high temperature can improve the uniform distribution of the resistive switching functional layer on the substrate, which is beneficial to further improve the storage performance of the hafnium oxide-based resistive switching memory.

[0034] Preferably, in step 1, the method for preparing the bottom electrode precursor solution comprises the steps of:

[0035] Step 101: mixing a lanthanum nitrate hexahydrate solution and a nickel acetate solution and performing a first stirring to obtain a first solution;

[0036] Step 102: adding acetylacetone dropwise to the first solution and performing a second stirring to form a bottom electrode precursor solution;

[0037] In step 101, the solvent of the lanthanum nitrate hexahydrate solution is ethylene glycol monomethyl ether and glacial acetic acid in a molar ratio of 1:1, and the solvent of the nickel acetate solution is ethylene glycol monomethyl ether and glacial acetic acid in a molar ratio of 1:1.

[0038] Preferably, the first stirring temperature is 20-25°C and the time is 15 minutes;

[0039] The second stirring temperature is 30 to 60° C. and the time is 1 to 3 hours;

[0040] The concentration of the bottom electrode precursor solution is 0.2 mol / L.

[0041] Preferably, in step 2, the method for preparing the resistive switching functional layer precursor solution comprises the steps of:

[0042] Step 201: mixing the lanthanum nitrate hexahydrate solution and the hafnium acetylacetonate solution and stirring for a third time to obtain a first solution;

[0043] Step 202: adding acetylacetone dropwise to the first solution and stirring to form a resistive switching functional layer precursor solution;

[0044] In step 201, the solvent of the lanthanum nitrate hexahydrate solution is ethylene glycol methyl ether and glacial acetic acid in a molar ratio of 2:1, and the solvent of the hafnium acetylacetonate solution is ethylene glycol methyl ether and glacial acetic acid in a molar ratio of 2:1.

[0045] Preferably, the temperature of the third stirring is 20-25°C and the time is 15 minutes;

[0046] The temperature of the fourth stirring is 30-60° C., and the time is 1-3 hours.

[0047] The concentration of the resistive switching functional layer precursor solution is 0.2 mol / L.

[0048] A third aspect of the present application provides an application of a hafnium oxide-based resistive random access memory in a computer memory device.

[0049] It should be noted that the hafnium oxide-based resistive random access memory provided in this application has a switching ratio exceeding 100 and excellent cycle erase and write stability, which can meet the requirements of high storage density and stable reading and writing of computer memory devices.

[0050] In summary, the present application provides a hafnium oxide-based resistive random access memory and its preparation method and application, wherein the hafnium oxide-based resistive random access memory is composed of a substrate, a bottom electrode, a lanthanum-doped hafnium oxide film, a first top electrode and a second top electrode, the bottom electrode covers one side of the substrate, the lanthanum-doped hafnium oxide film and the first top electrode are arranged on one side of the bottom electrode, and the second top electrode is arranged on one side of the lanthanum hafnium oxide film; under the action of a pulse voltage of 0V→3V→0V→-3V→0V, the hafnium oxide-based resistive random access memory can It is reset between high resistance and low resistance, and the ratio of high resistance to low resistance, that is, the switching ratio, exceeds 100, which is higher than the switching ratio of the hafnium oxide resistive variable memory without lanthanum doping, and has an excellent bipolar resistive variable effect. It shows that the hafnium oxide-based resistive variable memory provided by the present application improves the switching ratio of the hafnium oxide-based resistive variable memory by doping lanthanum into the hafnium oxide film of the resistive variable functional layer. At the same time, after 100 cycles of the pulse voltage, the hafnium oxide-based resistive variable memory can still maintain high resistance and low resistance stably, and the maintenance time is as long as 103 s, indicating that the stability and retention of the cyclic erasure of the hafnium oxide-based resistive random access memory are improved. The hafnium oxide-based resistive random access memory provided by this application solves the technical problem that the storage performance of the existing resistive random access memory needs to be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] In order to more clearly illustrate the specific implementation methods of the present application or the technical solutions in the prior art, the following is a brief introduction to the drawings required for use in the specific implementation methods or the description of the prior art. Obviously, the drawings described below are some implementation methods of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0052] Figure 1 A schematic structural diagram of the hafnium oxide-based resistive random access memory provided in Example 1 of the present application;

[0053] Figure 2 This is an IV curve diagram of the hafnium oxide-based resistive random access memory provided in Example 3 of the present application, obtained by testing under a pulse voltage of 7V;

[0054] Figure 3 This is a graph showing the cyclic erase and write characteristics of the hafnium oxide-based resistive random access memory provided in Example 3 of the present application under a read voltage of 0.2V;

[0055] Figure 4 This is an IV curve diagram of the hafnium oxide-based resistive random access memory provided in Example 4 of the present application, obtained by testing under a pulse voltage of 3V;

[0056] Figure 5 This is a graph showing the cyclic erase and write characteristics of the hafnium oxide-based resistive random access memory provided in Example 4 of the present application under a read voltage of 0.2V;

[0057] Figure 6 This is an IV curve diagram of the hafnium oxide-based resistive random access memory provided in Example 5 of the present application, obtained by testing under a pulse voltage of 3V;

[0058] Figure 7 This is a graph showing the cyclic erase and write characteristics of the hafnium oxide-based resistive random access memory provided in Example 5 of the present application under a read voltage of 0.2V;

[0059] Figure 8 This is a diagram showing the retention characteristics of the hafnium oxide-based resistive random access memory provided in Example 5 of the present application when read at 0.2V;

[0060] Figure 1 In the figure, 1 is the substrate, 2 is the bottom electrode, 3 is the resistive switching functional layer, 4 is the first electrode, and 5 is the second electrode. DETAILED DESCRIPTION

[0061] The present application provides a hafnium oxide-based resistive random access memory and a preparation method and application thereof, which are used to solve the technical problem that the storage performance of existing resistive random access memories needs to be improved.

[0062] The following will clearly and completely describe the technical solution of this application in conjunction with the accompanying drawings. Obviously, the embodiments described are only part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of this application.

[0063] Example 1

[0064] Example 1 of the present application provides a hafnium oxide based resistive random access memory, the composition of which is shown in the appendix of the specification. Figure 1 , comprising: a substrate, a bottom electrode, a resistive switching functional layer, a first top electrode and a second top electrode; the bottom electrode covers the surface of the substrate, the resistive switching functional layer covers the surface of the bottom electrode facing away from the substrate, the first top electrode is arranged on the surface of the bottom electrode facing away from the substrate, and the second top electrode is arranged on the surface of the resistive switching functional layer facing away from the substrate;

[0065] The resistive switching functional layer is a lanthanum-doped hafnium oxide film.

[0066] Example 2

[0067] Example 2 of the present application provides a method for preparing a bottom electrode precursor solution and a resistive switching functional layer precursor solution.

[0068] The preparation method of the lanthanum nickelate bottom electrode precursor solution comprises the following steps:

[0069] Step 1: Weigh 1.2860 g of lanthanum nitrate hexahydrate and 0.7391 g of nickel acetate using an electronic balance and dissolve them in 14 mL of a mixed solvent of ethylene glycol monomethyl ether and glacial acetic acid. Stir the lanthanum nitrate hexahydrate and the nickel acetate at room temperature to dissolve them to obtain a lanthanum nitrate hexahydrate solution and a nickel acetate solution. In the mixed solvent, the molar ratio of ethylene glycol monomethyl ether to glacial acetic acid is 1:1.

[0070] Step 2: After mixing the lanthanum nitrate hexahydrate solution and the nickel acetate solution, 2 mL of acetylacetone was added dropwise to adjust the volume to a molar concentration of lanthanum nickelate of 0.2 mol / L; stirring was carried out at 40 degrees Celsius for 2 hours until a transparent and clear lanthanum nickelate bottom electrode precursor solution was formed, and the mixture was allowed to stand for 72 hours for use.

[0071] It should be noted that the preparation method of the lanthanum nickelate bottom electrode precursor solution can also be used to prepare a strontium ruthenate solution, a lanthanum ruthenate solution, a lanthanum manganate solution or a strontium manganate bottom electrode precursor solution.

[0072] The preparation method of the resistive switching functional layer precursor solution includes: preparing a hafnium oxide film precursor solution doped with 4% lanthanum, preparing a hafnium oxide film precursor solution doped with 7% lanthanum, and preparing a hafnium oxide film precursor solution doped with 10% lanthanum.

[0073] The preparation of a hafnium oxide thin film precursor solution doped with 4% lanthanum comprises the following steps:

[0074] Step 1. Using an electronic balance, 0.0357 g of lanthanum nitrate hexahydrate and 1.1154 g of hafnium acetylacetonate are weighed and dissolved in 3 mL and 6 mL of a mixed solvent of ethylene glycol monomethyl ether and glacial acetic acid, respectively. The lanthanum nitrate hexahydrate and hafnium acetylacetonate are stirred at room temperature to dissolve to obtain a lanthanum nitrate hexahydrate solution and a hafnium acetylacetonate solution, wherein the molar ratio of ethylene glycol monomethyl ether to glacial acetic acid in the mixed solvent is 2:1.

[0075] Step 2: After mixing the lanthanum nitrate hexahydrate solution and the hafnium acetylacetonate solution, 1 mL of acetylacetone was added dropwise to adjust the volume to a molar concentration of 0.2 mol / L of the hafnium oxide solution doped with 4% lanthanum. The mixture was stirred at 43 degrees Celsius for 1 hour until a transparent and clear hafnium oxide thin film precursor solution doped with 4% lanthanum was formed, and the mixture was allowed to stand for 72 hours for use.

[0076] It should be noted that the preparation steps of the hafnium oxide thin film precursor solution doped with 7% and 10% lanthanum are different from the preparation steps of the hafnium oxide thin film precursor solution doped with 4% lanthanum in that the added amounts of lanthanum nitrate hexahydrate are 0.0645 g and 0.0857 g, respectively.

[0077] Example 3

[0078] Example 3 of the present application provides a method for preparing a hafnium oxide-based resistive random access memory, wherein the lanthanum doping amount in the resistive random access functional layer of the hafnium oxide-based resistive random access memory is 4%.

[0079] The preparation method comprises the steps of:

[0080] Step 1: Prepare the bottom electrode on the substrate surface:

[0081] Place the cleaned silicon wafer on the spin coater tray. Use a syringe to draw up 5ml of solution. Gently push the bottom of the syringe to drip the solution onto the substrate until the solution overflows the surface, stopping the dripping. Use a spin coater to spin-coat the lanthanum nickelate precursor solution prepared in Example 2 onto the silicon wafer. The spin-coating process parameters are: low speed 800 rpm, hold time 15 seconds; high speed 3500 rpm, hold time 20 seconds. Then bake for 10 minutes at 400°C. After drying, place the wafer in an annealing furnace for 15 minutes at 750°C.

[0082] Step 2: Prepare a resistive switching functional layer on the surface of the bottom electrode:

[0083] A spin coater was used to spin-coat the 4% lanthanum-doped hafnium oxide thin film precursor solution prepared in Example 2 onto the bottom electrode layer prepared in Step 1. The spin coating process was set at a low speed of 800 rpm for 15 seconds, then a high speed of 3500 rpm for 20 seconds. The substrate was then dried on a drying platform at 180°C for 10 minutes and then at 400°C for 10 minutes to remove organic matter. The spin coating and drying process was repeated four times. A cotton swab was then used to wipe a corner of the substrate with a small amount of water to expose the bottom electrode layer. Finally, the substrate was placed in a rapid annealing furnace and annealed at 750°C in air for 15 minutes to obtain the HfLaO layer.

[0084] Step 3: Prepare the first electrode and the second electrode by magnetron sputtering:

[0085] After the resistive switching functional layer on the surface of the bottom electrode has cooled, a small high-vacuum coating machine is used with a gold target and a mask to deposit a first top electrode on the surface of the HfLaO layer facing away from the bottom electrode layer, and a second top electrode is deposited on the surface of the bottom electrode layer 2 facing away from the substrate layer 1, thereby obtaining an HfLaO thin film device; wherein the first electrode and the second electrode are made of gold.

[0086] Example 4

[0087] Example 4 of the present application provides a method for preparing a hafnium oxide-based resistive random access memory, wherein the lanthanum doping amount in the resistive random access functional layer of the hafnium oxide-based resistive random access memory is 7%.

[0088] The difference between the preparation method and Example 3 is that: Step 2, in the process of preparing the resistive switching functional layer on the bottom electrode surface, the hafnium oxide film precursor solution doped with 7% lanthanum is spin-coated.

[0089] Example 5

[0090] Example 5 of the present application provides a method for preparing a hafnium oxide-based resistive random access memory, wherein the lanthanum doping amount in the resistive random access functional layer of the hafnium oxide-based resistive random access memory is 10%.

[0091] The difference between the preparation method and Example 3 is that: Step 2, in the process of preparing the resistive switching functional layer on the bottom electrode surface, the spin coating is a hafnium oxide film precursor solution doped with 10% lanthanum.

[0092] Example 6

[0093] In Example 6 of the present application, the performance of the hafnium oxide-based resistive random access memory prepared in Examples 3-5 was tested using a digital source meter Keithley 2400.

[0094] The hafnium oxide based resistive random access memory prepared in Example 3 was subjected to a cyclic pulse voltage of 0V→7V→0V→-7V→0V by using a digital source meter Keithley 2400. The test results were compared with those of Figure 2 , Figure 2 The IV curve obtained under the test condition of 7V is shown in the figure. Figure 2 It can be seen that the hafnium oxide-based resistive random access memory with a La doping content of 4% exhibits a high resistance state under a pulse voltage of 0V→7V, and then exhibits a low resistance state under a pulse voltage of 7V→0V. The current is in the range of 10 -2 mA~10 -1 mA, it shows a low resistance state at 0V→-7V, and a high resistance state at -7V→0V. The current size is 10 -1 mA~10 -3 mA;

[0095] The cycle erase and write characteristics of the hafnium oxide based resistive random access memory prepared in Example 3 are shown in FIG. Figure 3 ,from Figure 3 It can be seen that the high resistance state and low resistance state of the hafnium oxide-based resistive random access memory with a La doping content of 4% tend to be stable overall and remain stable even after 100 cycles.

[0096] The hafnium oxide based resistive random access memory prepared in Example 4 was subjected to a cyclic pulse voltage of 0V→3V→0V→-3V→0V by using a digital source meter Keithley 2400. The test results were compared with those of Figure 4 , Figure 4 The IV curve is obtained under the test condition of 3V. Figure 4 It can be seen that the hafnium oxide-based resistive memory with a La doping content of 7% exhibits a high resistance state under a pulse voltage of 0V→3V, and then exhibits a low resistance state at 3V→0V. The current size is 10 -3 mA~10 -2 mA, it shows a low resistance state at 0V→-3V, and a high resistance state at -3V→0V. The current size is 10 -4 mA~10 -4 mA;

[0097] The cycle erase and write characteristics of the hafnium oxide based resistive random access memory prepared in Example 4 are shown in FIG. Figure 5 ,from Figure 5 It can be seen that the low resistance state of the hafnium oxide-based resistive random access memory with a La doping content of 7% is still very stable after 100 cycles, and the high resistance state of the hafnium oxide-based resistive random access memory is also relatively stable after the cycle number reaches 100 times.

[0098] The hafnium oxide based resistive random access memory prepared in Example 5 was subjected to a cyclic pulse voltage of 0V→3V→0V→-3V→0V by using a digital source meter Keithley 2400. The test results were compared with those of Figure 6 , Figure 6 The IV curve is obtained under the test condition of 3V. Figure 6It can be seen that the hafnium oxide-based resistive switching memory with a 10% La doping content exhibits a high-resistance state under a pulse voltage of 0V→3V. Under a voltage of 3V→0V, the resistance state of the HfLaO thin film device with a 10% La doping content resets, that is, it changes to a low-resistance state. Under a voltage of 0V→-3V, the resistance state of the HfLaO thin film device with a 10% La doping content does not reset and remains in a low-resistance state. Under a voltage of -3V→0V, the resistance state of the HfLaO thin film device with a 10% La doping content is replaced, returning to a high-resistance state. Its on-off ratio (the ratio of high-resistance state to low-resistance state) exceeds 100, demonstrating a good bipolar resistive switching effect.

[0099] The cycle erase and write characteristics of the hafnium oxide-based resistive random access memory prepared in Example 5 are shown in FIG. Figure 7 ,from Figure 7 It can be seen that the switching ratio of the hafnium oxide-based resistive random access memory with a La doping content of 10% is obvious, exceeding 100, and it is still very stable after 100 cycles, and its durability retention performance is good.

[0100] The retention characteristic diagram of the hafnium oxide-based resistive random access memory prepared in Example 5 is shown in FIG. Figure 8 ,from Figure 8 It can be seen that the switching ratio of the hafnium oxide-based resistive random access memory with a La doping content of 10% exceeds 100 and maintains 10 3 It is still very stable after s, and its maintenance performance is good.

[0101] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A hafnium oxide-based resistive random access memory, characterized in that: include: A substrate, a bottom electrode, a resistive switching functional layer, a first top electrode and a second top electrode; The bottom electrode covers the surface of the substrate; The resistive switching functional layer covers the surface of the bottom electrode facing away from the substrate; The first top electrode is arranged on a surface of the bottom electrode facing away from the substrate; The second top electrode is arranged on a surface of the resistive switching functional layer facing away from the substrate; The resistive switching functional layer is a lanthanum-doped hafnium oxide film, and the mass fraction of lanthanum in the lanthanum-doped hafnium oxide film is 10%.

2. The hafnium oxide-based resistive random access memory according to claim 1, wherein: The substrate is selected from conductive glass, platinum, silicon wafer or mica.

3. The hafnium oxide-based resistive random access memory according to claim 1, wherein: The bottom electrode is selected from lanthanum nickelate, strontium ruthenate, lanthanum ruthenate, lanthanum manganate or strontium manganate.

4. The method for preparing a hafnium oxide-based resistive random access memory according to any one of claims 1 to 3, characterized in that: Including steps: Step 1: Spin-coating a bottom electrode precursor solution on a substrate surface and performing a first annealing to obtain a bottom electrode covering the substrate surface; Step 2: spin-coating a resistive switching functional layer precursor solution on the surface of the bottom electrode, and performing a second annealing to obtain a resistive switching functional layer covering the surface of the bottom electrode; Step 3: depositing a first electrode and a second electrode on the surface of the bottom electrode and the surface of the resistive switching functional layer by magnetron sputtering; In step 1, the first annealing temperature is 600-900°C and the time is 10-20 min; In step 2, the second annealing temperature is 600-900°C and the time is 10-20 min; In step 3, before the magnetron sputtering, a mask having the shapes of the first electrode and the second electrode is placed above the bottom electrode and the resistive switching functional layer.

5. The method for preparing a hafnium oxide-based resistive random access memory according to claim 4, wherein: In step 1, the method for preparing the bottom electrode precursor solution comprises the steps of: Step 101: mixing a lanthanum nitrate hexahydrate solution and a nickel acetate solution and performing a first stirring to obtain a first solution; Step 102: adding acetylacetone dropwise to the first solution and performing a second stirring to form a bottom electrode precursor solution; In step 101, the solvent of the lanthanum nitrate hexahydrate solution is ethylene glycol monomethyl ether and glacial acetic acid in a molar ratio of 1:1, and the solvent of the nickel acetate solution is ethylene glycol monomethyl ether and glacial acetic acid in a molar ratio of 1:

1.

6. The method for preparing a hafnium oxide-based resistive random access memory according to claim 4, wherein: In step 2, the method for preparing the resistive switching functional layer precursor solution comprises the following steps: Step 201: mixing the lanthanum nitrate hexahydrate solution and the hafnium acetylacetonate solution and stirring for a third time to obtain a first solution; Step 202: adding acetylacetone dropwise to the first solution and stirring to form a resistive switching functional layer precursor solution; In step 201, the solvent of the lanthanum nitrate hexahydrate solution is ethylene glycol methyl ether and glacial acetic acid in a molar ratio of 2:1, and the solvent of the hafnium acetylacetonate solution is ethylene glycol methyl ether and glacial acetic acid in a molar ratio of 2:

1.

7. Use of the hafnium oxide-based resistive random access memory according to any one of claims 1 to 3 or the hafnium oxide-based resistive random access memory prepared by the preparation method according to any one of claims 4 to 6 in a computer memory device.

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