A method for manufacturing an air bridge in a millimeter wave integrated circuit

Abstract

The present invention provides an air bridge manufacturing method in a millimeter wave integrated circuit, which belongs to the technical field of semiconductor devices, and specifically comprises: confirming the minimum size of the ground notches on both sides of the air bridge and the minimum size of the square holes on the bridge deck of the air bridge based on the parasitic capacitance control requirement; modifying the parasitic capacitance of the air bridge in two ways to obtain an air bridge model; based on the air bridge model, analyzing the stress condition of the air bridge to obtain an analysis result; confirming whether the air bridge is stable, if it is in a stable state, further increasing the size of the ground notches on both sides of the air bridge and the size of the square holes on the bridge deck of the air bridge, and continuing to analyze the stress condition; if it is in an unstable state, using a first size threshold to reduce the size of the ground notches on both sides of the air bridge and the size of the square holes on the bridge deck of the air bridge, and using it as a final air bridge manufacturing plan, thereby comprehensively considering the stress condition and the parasitic capacitance, and further improving the reliability of the semiconductor device.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a method for manufacturing an air bridge in a millimeter wave integrated circuit. Background Art

[0002] With the rapid development of communication technologies such as 5G and millimeter wave radar, the rapidly increasing characteristic frequency and increasing power of semiconductor devices have put forward higher requirements for high-speed interconnects, which requires the development of an interconnect technology with small parasitic capacitance, small resistance and simple process to connect various parts of the circuit or device. The air bridge uses air with the lowest dielectric constant as the dielectric to minimize the parasitic capacitance per unit area at the intersection of the interconnect, which is conducive to improving the frequency characteristics of the device, while reducing the device area and saving manufacturing costs.

[0003] In his master's thesis "Research on CPW Air Bridge and Its Application in Directional Couplers", the author Xue Fei studied the differences in the geometric structures of the air bridges and found that changing the geometric dimensions would affect the transmission characteristics of the coplanar waveguide. This chapter mainly discussed the structure of the air bridges, the added positions, and the number of air bridges. The impact on parasitic capacitance was verified through simulation, but the stress conditions of the air bridges were not considered, resulting in the final semiconductor stability not being able to meet the needs of actual engineering.

[0004] In view of the above technical problems, the present invention provides a method for manufacturing an air bridge in a millimeter wave integrated circuit. Summary of the invention

[0005] To achieve the purpose of the present invention, the present invention adopts the following technical solutions:

[0006] According to one aspect of the present invention, a method for manufacturing an air bridge in a millimeter wave integrated circuit is provided.

[0007] A method for manufacturing an air bridge in a millimeter wave integrated circuit, characterized by comprising:

[0008] S1 determining the parasitic capacitance control requirements of the air bridge of the semiconductor device, and determining the minimum size of the gaps dug on the ground at both sides of the air bridge and the minimum size of the square holes dug on the bridge deck of the air bridge based on the parasitic capacitance control requirements;

[0009] S2 is based on the minimum size of the gaps dug on the ground at both sides of the air bridge and the minimum size of the square holes dug on the bridge deck of the air bridge, and the parasitic capacitance of the air bridge is modified by digging gaps on the ground at both sides of the air bridge and digging square holes on the bridge deck of the air bridge to obtain an air bridge model;

[0010] S3, based on the air bridge model, analyzing the stress condition of the air bridge to obtain an analysis result;

[0011] S4 confirms whether the air bridge is stable according to the analysis result. If it is stable, the size of the ground gaps on both sides of the air bridge and the size of the square holes on the bridge deck of the air bridge are further increased by using the third size threshold, and the process returns to step S2 to analyze the stress. If it is unstable, the process proceeds to step S4.

[0012] S5 uses the first size threshold to reduce the size of the gaps dug on the ground on both sides of the air bridge and the size of the square holes dug on the air bridge deck, and confirms the size of the gaps dug on the ground on both sides of the air bridge and the size of the square holes dug on the air bridge deck at this time, and uses them as the final air bridge production plan.

[0013] By first confirming the minimum size of the gap dug on the ground on both sides of the air bridge and the minimum size of the square hole dug on the air bridge deck based on the parasitic capacitance control requirements, and based on the minimum size, taking this as a starting point, modifying the air bridge to obtain an air bridge model, and performing a force analysis on the air bridge model, when the force analysis results confirm whether the air bridge is stable, if it is in a stable state, a third size threshold is used to further increase the size of the gap dug on the ground on both sides of the air bridge and the size of the square hole dug on the air bridge deck until they are no longer in a stable state. At this time, the size of the gap dug on the ground on both sides of the air bridge and the size of the square hole dug on the air bridge deck The size of the air bridge is in a critical state. The size of the notch on the ground on both sides of the air bridge and the size of the square hole on the air bridge deck are reduced by adopting a first size threshold, and the size of the notch on the ground on both sides of the air bridge and the size of the square hole on the air bridge deck at this time are confirmed and used as the final air bridge production plan, so that the final size of the notch on the ground on both sides of the air bridge and the size of the square hole on the air bridge deck can not only meet the force stability requirements, but also maximize the size of the notch on the ground on both sides of the air bridge and the size of the square hole on the air bridge deck, thereby effectively suppressing parasitic capacitance.

[0014] Determine the parasitic capacitance control requirements of the air bridge of the semiconductor device, and determine the minimum size of the gaps dug on the ground on both sides of the air bridge and the minimum size of the holes dug on the bridge deck of the air bridge based on the parasitic capacitance control requirements, so that the size of the gaps dug on the ground on both sides of the air bridge and the size of the holes dug on the bridge deck of the air bridge can meet the overall parasitic capacitance control requirements, and on the basis of ensuring that the most basic parasitic capacitance control requirements can be met, the overall size control results can be more practical. Based on the minimum size of the gaps dug on the ground on both sides of the air bridge and the minimum size of the holes dug on the bridge deck of the air bridge, the parasitic capacitance of the air bridge is modified by digging gaps on the ground on both sides of the air bridge and digging holes on the bridge deck of the air bridge to obtain an air bridge model, thereby further reducing the parasitic capacitance of the air bridge and further increasing the stability of the semiconductor components. Based on the air bridge model, the stress condition of the air bridge is analyzed to obtain an analysis result, and whether the air bridge is stable is confirmed based on the analysis result. If it is in a stable state, a third size threshold is used to further increase the size of the gaps dug on both sides of the air bridge and the size of the holes dug on the bridge deck of the air bridge. The size of the square hole excavated on the air bridge deck is determined, thereby further reducing the parasitic capacitance caused by the air bridge, and continuing to return to step S2 for force analysis. If it is in an unstable state, enter step S4, and use the first size threshold to reduce the size of the gap excavated on the ground on both sides of the air bridge and the size of the square hole excavated on the air bridge deck, and confirm the size of the gap excavated on the ground on both sides of the air bridge and the size of the square hole excavated on the air bridge deck at this time, and use them as the final air bridge production plan, so that the final production plan not only takes into account its force stability, but also greatly reduces the influence of parasitic capacitance, thereby making the overall air bridge plan more reliable and effective.

[0015] A further technical solution is that the air bridge parasitic capacitance control requirement is determined according to the working requirements of the semiconductor device.

[0016] By adopting the working requirements of semiconductors, the control requirements for the air bridge parasitic capacitance are combined with the actual working scenarios, thereby further improving the practicality of the overall design.

[0017] A further technical solution is to determine the relationship between the size of the square hole dug on the air bridge deck and the parasitic capacitance of the air bridge, and to determine the relationship between the size of the gap dug on the ground on both sides of the air bridge and the parasitic capacitance of the air bridge by establishing a semiconductor device simulation model.

[0018] By establishing a simulation model, we can obtain the curve relationship between the size of the excavated hole on the air bridge deck and the parasitic capacitance of the air bridge. Using this as a template, we can determine the relationship between the two, making the overall size adjustment more reasonable.

[0019] A further technical solution is to preferentially reduce the parasitic capacitance of the air bridge by digging gaps in the ground on both sides of the air bridge, and the minimum size of the gaps in the ground on both sides of the air bridge is determined according to the relationship between the size of the gaps in the ground on both sides of the air bridge and the parasitic capacitance of the air bridge.

[0020] By establishing a simulation model, we can obtain the curve relationship between the size of the gaps in the ground on both sides of the air bridge and the parasitic capacitance of the air bridge. This is used as a template to determine the relationship between the two, making the overall size adjustment more reasonable. By giving priority to the method of digging gaps in the ground on both sides of the air bridge to reduce the parasitic capacitance of the air bridge, most of the air bridge failures are caused by the collapse of the bridge deck and the connection with the circuit below. Therefore, the method of digging gaps in the ground on both sides of the air bridge is given priority to further improve the overall stability.

[0021] A further technical solution is that the minimum size of the excavated hole on the air bridge deck is determined according to the relationship between the size of the excavated hole on the air bridge deck and the parasitic capacitance of the air bridge.

[0022] A further technical solution is that the stress analysis includes the stress on the piers and the stress on the bridge deck.

[0023] A further technical solution is that the force on the bridge pier includes gravity, and the acceleration of gravity is determined by the working environment of the semiconductor components, and the gravity acceleration is taken as 10g.

[0024] By selecting a gravitational acceleration of 10g, it is further linked to some severe working conditions in reality, thereby further improving the reliability of the overall force analysis.

[0025] A further technical solution is that the force on the bridge deck includes the tension of the piers and the gravity of the bridge deck, and the acceleration of the piers is 10g of gravity acceleration.

[0026] A further technical solution is that the analysis result is obtained by performing finite element analysis on the air bridge using ANSYS software according to the stress condition of the air bridge.

[0027] A further technical solution is that the first size threshold is determined according to the size of the air bridge, and its unit is square micrometer.

[0028] A further technical solution is that it also includes a second size threshold. When the working temperature of the semiconductor device is greater than 450 degrees and the gravitational acceleration it is subjected to is greater than 10g, the second size threshold is used to reduce the size of the gaps dug on the ground on both sides of the air bridge and the size of the square holes dug on the air bridge deck, wherein the second size threshold is greater than the first size threshold.

[0029] When the working temperature is greater than 450 degrees and the gravitational acceleration is greater than 10g, the working environment becomes more severe due to the expansion of temperature and the increase of gravitational acceleration. By further increasing the size reduction threshold, the size of the gaps dug on the ground on both sides and the size of the square holes dug on the air bridge deck become smaller, thereby making the overall stability more stable. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings.

[0031] Figure 1 It is a flow chart of a method for manufacturing an air bridge in a millimeter wave integrated circuit according to Example 1.

[0032] Figure 2 It is a specific structural diagram of the gaps dug in the ground on both sides of the air bridge according to Example 1.

[0033] Figure 3 It is a specific structural diagram of the square hole excavated on the bridge deck of the air bridge according to Example 1. DETAILED DESCRIPTION

[0034] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that the present invention will be comprehensive and complete and fully convey the concepts of the example embodiments to those skilled in the art. The same reference numerals in the figures represent the same or similar structures, and thus their detailed description will be omitted.

[0035] The terms "a", "an", "the", and "said" are used to indicate the presence of one or more elements / components / etc.; the terms "comprising" and "having" are used to express an open-ended inclusive meaning and mean that additional elements / components / etc. may be present in addition to the listed elements / components / etc.

[0036] With the rapid development of communication technologies such as 5G and millimeter wave radar, the rapidly increasing characteristic frequency and increasing power of semiconductor devices have put forward higher requirements for high-speed interconnects, which requires the development of an interconnect technology with small parasitic capacitance, small resistance and simple process to connect various parts of the circuit or device. The air bridge uses air with the lowest dielectric constant as the dielectric to minimize the parasitic capacitance per unit area at the intersection of the interconnect, which is conducive to improving the frequency characteristics of the device, while reducing the device area and saving manufacturing costs.

[0037] In his master's thesis "Research on CPW Air Bridge and Its Application in Directional Couplers", the author Xue Fei studied the differences in the geometric structures of the air bridges and found that changing the geometric dimensions would affect the transmission characteristics of the coplanar waveguide. This chapter mainly discussed the structure of the air bridges, the added positions, and the number of air bridges. The impact on parasitic capacitance was verified through simulation, but the stress conditions of the air bridges were not considered, resulting in the final semiconductor stability not being able to meet the needs of actual engineering. Example

[0038] To solve the above problems, according to one aspect of the present invention, Figure 1 As shown, a method for manufacturing an air bridge in a millimeter wave integrated circuit is provided.

[0039] A method for manufacturing an air bridge in a millimeter wave integrated circuit, characterized by comprising:

[0040] S1 determining the parasitic capacitance control requirements of the air bridge of the semiconductor device, and determining the minimum size of the gaps dug on the ground at both sides of the air bridge and the minimum size of the square holes dug on the bridge deck of the air bridge based on the parasitic capacitance control requirements;

[0041] S2 is based on the minimum size of the gaps dug on the ground at both sides of the air bridge and the minimum size of the square holes dug on the bridge deck of the air bridge, and the parasitic capacitance of the air bridge is modified by digging gaps on the ground at both sides of the air bridge and digging square holes on the bridge deck of the air bridge to obtain an air bridge model;

[0042] S3, based on the air bridge model, analyzing the stress condition of the air bridge to obtain an analysis result;

[0043] S4 confirms whether the air bridge is stable according to the analysis result. If it is stable, the size of the ground gaps on both sides of the air bridge and the size of the square holes on the bridge deck of the air bridge are further increased by using the third size threshold, and the process returns to step S2 to analyze the stress. If it is unstable, the process proceeds to step S4.

[0044] S5 uses the first size threshold to reduce the size of the gaps dug on the ground on both sides of the air bridge and the size of the square holes dug on the air bridge deck, and confirms the size of the gaps dug on the ground on both sides of the air bridge and the size of the square holes dug on the air bridge deck at this time, and uses them as the final air bridge production plan.

[0045] For example, if the control demand of parasitic capacitance is 1.05X10-2PF, then on the basis that the width, height and length of the air bridge have been determined, the parasitic capacitance at this time is 1.5X10-2PF. If the relationship between the size of the ground notch on both sides of the air bridge and the parasitic capacitance is that the parasitic capacitance decreases by 0.05X10-2PF for every square micron reduction, if the relationship between the size of the square hole on the bridge deck of the air bridge and the parasitic capacitance is that the parasitic capacitance decreases by 0.05X10-2PF for every square micron reduction, the parasitic capacitance decreases by 0.05X10-2PF, it is preferred to use the method of digging notches on both sides of the air bridge to reduce the parasitic capacitance, and the parasitic capacitance reduced by using the method of digging notches on both sides of the air bridge is equal to more than twice the parasitic capacitance reduced by using the method of digging square holes on the bridge deck of the air bridge. At this time, the minimum size of the ground notch on both sides of the air bridge is 6 square microns, and the air The minimum size of the square hole dug on the bridge deck is 3 square microns. The air bridge is modified by the above method. If the force stability is good at this time, the size is increased by 0.05 square microns, so that the size of the gap dug on the ground on both sides of the air bridge and the size of the square hole dug are 6.05 square microns and 3.05 square microns respectively. The force condition is further analyzed until it is in an unstable state. If the size is 8 square microns and 4 square microns at this time, the first size threshold of 0.1 square microns is used, so that the final size is 7.9 square microns and 3.9 square microns, and the air bridge is made with the above size, wherein the square hole dug on the air bridge deck is excavated from the middle of the bridge deck, and the gap dug on the ground on both sides of the air bridge is excavated from the ground on both sides directly below the air bridge, and the digging gap size is the digging gap size of the single-side ground.

[0046] By firstly determining the parasitic capacitance control requirements, generally at this time the width, height and length of the air bridge are determined, confirming the minimum size of the gaps dug on the ground on both sides of the air bridge and the minimum size of the square holes dug on the bridge deck of the air bridge, and based on the minimum size, modifying the air bridge to obtain an air bridge model and performing a force analysis on the air bridge model. When the force analysis results confirm whether the air bridge is stable, if it is in a stable state, the third size threshold is used to further increase the size of the gaps dug on the ground on both sides of the air bridge and the size of the square holes dug on the bridge deck of the air bridge until it is no longer in a stable state. At this time, the size of the gaps dug on the ground on both sides of the air bridge is The size of the ground notch on both sides of the air bridge and the size of the excavated hole on the air bridge deck are in a critical state. The first size threshold is adopted to reduce the size of the ground notch on both sides of the air bridge and the size of the excavated hole on the air bridge deck, and the size of the ground notch on both sides of the air bridge and the size of the excavated hole on the air bridge deck at this time are confirmed and used as the final air bridge production plan, so that the final size of the ground notch on both sides of the air bridge and the size of the excavated hole on the air bridge deck can not only meet the force stability requirements, but also maximize the size of the ground notch on both sides of the air bridge and the size of the excavated hole on the air bridge deck, thereby effectively suppressing the parasitic capacitance.

[0047] Determine the parasitic capacitance control requirements of the air bridge of the semiconductor device, and determine the minimum size of the gaps dug on the ground on both sides of the air bridge and the minimum size of the holes dug on the bridge deck of the air bridge based on the parasitic capacitance control requirements, so that the size of the gaps dug on the ground on both sides of the air bridge and the size of the holes dug on the bridge deck of the air bridge can meet the overall parasitic capacitance control requirements, and on the basis of ensuring that the most basic parasitic capacitance control requirements can be met, the overall size control results can be more practical. Based on the minimum size of the gaps dug on the ground on both sides of the air bridge and the minimum size of the holes dug on the bridge deck of the air bridge, the parasitic capacitance of the air bridge is modified by digging gaps on the ground on both sides of the air bridge and digging holes on the bridge deck of the air bridge to obtain an air bridge model, thereby further reducing the parasitic capacitance of the air bridge and further increasing the stability of the semiconductor components. Based on the air bridge model, the stress condition of the air bridge is analyzed to obtain an analysis result, and whether the air bridge is stable is confirmed based on the analysis result. If it is in a stable state, a third size threshold is used to further increase the size of the gaps dug on both sides of the air bridge and the size of the holes dug on the bridge deck of the air bridge. The size of the square hole excavated on the air bridge deck is determined, thereby further reducing the parasitic capacitance caused by the air bridge, and continuing to return to step S2 for force analysis. If it is in an unstable state, enter step S4, and use the first size threshold to reduce the size of the gap excavated on the ground on both sides of the air bridge and the size of the square hole excavated on the air bridge deck, and confirm the size of the gap excavated on the ground on both sides of the air bridge and the size of the square hole excavated on the air bridge deck at this time, and use them as the final air bridge production plan, so that the final production plan not only takes into account its force stability, but also greatly reduces the influence of parasitic capacitance, thereby making the overall air bridge plan more reliable and effective.

[0048] In another possible embodiment, the air bridge parasitic capacitance control requirement is determined according to the working requirements of the semiconductor device.

[0049] By adopting the working requirements of semiconductors, the control requirements for the air bridge parasitic capacitance are combined with the actual working scenarios, thereby further improving the practicality of the overall design.

[0050] In another possible embodiment, by establishing a semiconductor device simulation model, the relationship between the size of the square hole in the air bridge deck and the parasitic capacitance of the air bridge is determined, and the relationship between the size of the gap in the ground on both sides of the air bridge and the parasitic capacitance of the air bridge is determined.

[0051] By establishing a simulation model, we can obtain the curve relationship between the size of the excavated hole on the air bridge deck and the parasitic capacitance of the air bridge. Using this as a template, we can determine the relationship between the two, making the overall size adjustment more reasonable.

[0052] In another possible embodiment, the parasitic capacitance of the air bridge is preferably reduced by digging gaps in the ground on both sides of the air bridge, and the minimum size of the gaps in the ground on both sides of the air bridge is determined according to the relationship between the size of the gaps in the ground on both sides of the air bridge and the parasitic capacitance of the air bridge.

[0053] By establishing a simulation model, we can obtain the curve relationship between the size of the gaps in the ground on both sides of the air bridge and the parasitic capacitance of the air bridge. This is used as a template to determine the relationship between the two, making the overall size adjustment more reasonable. By giving priority to the method of digging gaps in the ground on both sides of the air bridge to reduce the parasitic capacitance of the air bridge, most of the air bridge failures are caused by the collapse of the bridge deck and the connection with the circuit below. Therefore, the method of digging gaps in the ground on both sides of the air bridge is given priority to further improve the overall stability.

[0054] In another possible embodiment, the minimum size of the excavated hole on the bridge deck of the air bridge is determined according to the relationship between the size of the excavated hole on the bridge deck of the air bridge and the parasitic capacitance of the air bridge.

[0055] In another possible embodiment, the stress condition analysis includes stress on bridge piers and stress on bridge decks.

[0056] In another possible embodiment, the force acting on the bridge pier includes gravity, and the acceleration of gravity is determined by the working environment of the semiconductor component, and the gravity acceleration is 10g.

[0057] By selecting a gravitational acceleration of 10g, it is further linked to some severe working conditions in reality, thereby further improving the reliability of the overall force analysis.

[0058] In another possible embodiment, the force on the bridge deck includes the tension of the bridge pier and the gravity of the bridge deck, and the acceleration of the bridge pier is 10g of gravity acceleration.

[0059] In another possible embodiment, the analysis result is obtained by performing a finite element analysis on the air bridge using ANSYS software according to the stress condition of the air bridge.

[0060] In another possible embodiment, the first size threshold is determined according to the size of the air bridge, and the unit is square micrometer.

[0061] In another possible embodiment, a second size threshold is also included. When the working temperature of the semiconductor device is greater than 450 degrees and the gravitational acceleration it is subjected to is greater than 10g, the second size threshold is used to reduce the size of the gap dug on the ground on both sides of the air bridge and the size of the square hole dug on the bridge deck of the air bridge, wherein the second size threshold is greater than the first size threshold.

[0062] For a specific example, if the first size threshold is 0.1 square microns, the second size threshold is 0.2 square microns.

[0063] When the working temperature is greater than 450 degrees and the gravitational acceleration is greater than 10g, the working environment becomes more severe due to the expansion of temperature and the increase of gravitational acceleration. By further increasing the size reduction threshold, the size of the gaps dug on the ground on both sides and the size of the square holes dug on the air bridge deck become smaller, thereby making the overall stability more stable.

[0064] In the embodiments of the present invention, the term "plurality" refers to two or more than two, unless otherwise clearly defined. The terms "installation", "connection", "fixation" and the like should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection. For those skilled in the art, the specific meanings of the above terms in the embodiments of the present invention can be understood according to the specific circumstances.

[0065] In the description of the embodiments of the present invention, it needs to be understood that the directions or positional relationships indicated by the terms "upper" and "lower" are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present invention and simplifying the description, rather than indicating or implying that the device or unit referred to must have a specific direction, be constructed and operated in a specific orientation. Therefore, it cannot be understood as a limitation on the embodiments of the present invention.

[0066] In the description of this specification, the description of the terms "one embodiment", "a preferred embodiment", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the embodiment of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0067] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for manufacturing an air bridge in a millimeter wave integrated circuit, characterized in that: Specifically include: S1 determining the parasitic capacitance control requirements of the air bridge of the semiconductor device, and determining the minimum size of the gaps dug on the ground at both sides of the air bridge and the minimum size of the square holes dug on the bridge deck of the air bridge based on the parasitic capacitance control requirements; S2 is based on the minimum size of the gaps dug on the ground at both sides of the air bridge and the minimum size of the square holes dug on the bridge deck of the air bridge, and the parasitic capacitance of the air bridge is modified by digging gaps on the ground at both sides of the air bridge and digging square holes on the bridge deck of the air bridge to obtain an air bridge model; S3, based on the air bridge model, analyzing the stress condition of the air bridge to obtain an analysis result; S4 confirms whether the air bridge is stable according to the analysis result. If it is stable, the size of the ground gaps on both sides of the air bridge and the size of the square holes on the bridge deck of the air bridge are further increased by using the third size threshold, and the process returns to step S2 to analyze the stress. If it is unstable, the process proceeds to step S4. S5: using the first size threshold to reduce the size of the ground gaps on both sides of the air bridge and the size of the square holes on the bridge deck of the air bridge, and confirming the size of the ground gaps on both sides of the air bridge and the size of the square holes on the bridge deck of the air bridge at this time, and using them as the final air bridge manufacturing plan; The first size threshold is determined according to the size of the air bridge, and its unit is square micrometer; The third size threshold is 0.05 square microns.

2. The method for manufacturing an air bridge in a millimeter wave integrated circuit according to claim 1, characterized in that: The air bridge parasitic capacitance control requirement is determined according to the working requirements of the semiconductor device.

3. The method for manufacturing an air bridge in a millimeter wave integrated circuit according to claim 1, characterized in that: By establishing a semiconductor device simulation model, the relationship between the size of the square hole dug on the air bridge deck and the parasitic capacitance of the air bridge is determined, and the relationship between the size of the gap dug on the ground on both sides of the air bridge and the parasitic capacitance of the air bridge is determined.

4. The method for manufacturing an air bridge in a millimeter wave integrated circuit according to claim 1, characterized in that: The parasitic capacitance of the air bridge is preferably reduced by digging gaps in the ground on both sides of the air bridge. The minimum size of the gaps in the ground on both sides of the air bridge is determined according to the relationship between the size of the gaps in the ground on both sides of the air bridge and the parasitic capacitance of the air bridge.

5. The method for manufacturing an air bridge in a millimeter wave integrated circuit as claimed in claim 4, characterized in that: The minimum size of the excavated hole of the air bridge deck is determined according to the relationship between the size of the excavated hole of the air bridge deck and the parasitic capacitance of the air bridge.

6. The method for manufacturing an air bridge in a millimeter wave integrated circuit according to claim 1, characterized in that: The stress analysis includes the stress on the piers and the stress on the bridge deck.

7. A method for manufacturing an air bridge in a millimeter wave integrated circuit as claimed in claim 6, characterized in that: The force on the pier includes gravity, the acceleration of which is determined by the working environment of the semiconductor device, and the gravity acceleration is taken as 10g; the force on the bridge deck includes the tension of the pier and the gravity of the bridge deck, and the acceleration of the pier is taken as 10g of gravity acceleration.

8. The method for manufacturing an air bridge in a millimeter wave integrated circuit according to claim 1, characterized in that: The analysis results are obtained by performing finite element analysis on the air bridge using ANSYS software according to the stress condition of the air bridge.

9. The method for manufacturing an air bridge in a millimeter wave integrated circuit according to claim 1, characterized in that: It also includes a second size threshold. When the working temperature of the semiconductor device is greater than 450 degrees and the gravitational acceleration it is subjected to is greater than 10g, the second size threshold is used to reduce the size of the gaps dug on the ground on both sides of the air bridge and the size of the square holes dug on the bridge deck of the air bridge, wherein the second size threshold is greater than the first size threshold.

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