Substrate processing device and substrate processing method

Abstract

The substrate processing device comprises a holding part, a liquid supply part, a recovery part, a circulation path, a gas supply part and a control part. The holding part is used to hold a substrate. The liquid supply part is used to supply a processing liquid to a first main surface of the substrate held in the holding part. The recovery part recovers the used processing liquid used in the processing of the substrate. The circulation path is used to return the processing liquid recovered by the recovery part to the liquid supply part. The gas supply part supplies gas to a second main surface of the substrate held in the holding part which is in the opposite direction to the first main surface. The control part controls the liquid supply part and the gas supply part. When the control part supplies the predetermined processing liquid returned to the liquid supply part through the circulation path to the first main surface, the control part supplies the gas to the second main surface.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing device and a substrate processing method. Background Art

[0002] The liquid processing device described in Patent Document 1 is provided with a nozzle member. The nozzle member is arranged below the substrate in a non-rotating state. The nozzle member has a processing liquid spraying nozzle for spraying a processing liquid and a gas spraying nozzle for spraying a drying gas on its upper surface. The processing liquid spraying nozzle supplies a chemical liquid and a rinsing liquid to the lower surface of the substrate in turn. Thereafter, while the processing liquid spraying nozzle sprays the rinsing liquid, the gas spraying nozzle sprays the drying gas to form a mist of the rinsing liquid.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2010-186859 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] One aspect of the present disclosure provides a technology for suppressing generation of particles on a second main surface opposite to the first main surface and suppressing variation in concentration of the processing liquid when a predetermined processing liquid to be reused is supplied to a first main surface of a substrate.

[0008] Solutions for solving problems

[0009] A substrate processing device according to one embodiment of the present disclosure includes a holding portion, a liquid supply portion, a recovery portion, a circulation path, a gas supply portion, and a control portion. The holding portion is used to hold a substrate. The liquid supply portion is used to supply a processing liquid to a first main surface of the substrate held in the holding portion. The recovery portion recovers the used processing liquid used in the processing of the substrate. The circulation path is used to return the processing liquid recovered by the recovery portion to the liquid supply portion. The gas supply portion supplies gas to a second main surface of the substrate held in the holding portion that is in an opposite direction to the first main surface. The control portion controls the liquid supply portion and the gas supply portion. When the control portion supplies the predetermined processing liquid returned to the liquid supply portion through the circulation path to the first main surface, the control portion supplies the gas to the second main surface.

[0010] Effects of the Invention

[0011] According to one embodiment of the present disclosure, when a predetermined processing liquid is reused and supplied to a first main surface of a substrate, generation of particles on a second main surface opposite to the first main surface can be suppressed, and variation in concentration of the processing liquid can be suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a diagram showing a substrate processing apparatus according to one embodiment.

[0013] Figure 2 This is a table showing a substrate processing method according to one embodiment.

[0014] Figure 3 Yes means Figure 2 FIG. 1 is a diagram of an example of S101.

[0015] Figure 4 Yes means Figure 2 FIG. 1 is a diagram of an example of S102 and S104.

[0016] Figure 5 Yes means Figure 2 FIG. 1 is a diagram of an example of S103.

[0017] Figure 6 Yes means Figure 2 FIG. 1 is a diagram of an example of S105 .

[0018] Figure 7 Yes means Figure 2 FIG. 1 is a diagram of an example of S106 .

[0019] Figure 8 This is a diagram showing an example of the relationship between the flow rate of N 2 gas supplied to the second main surface and the number of particles in the second main surface.

[0020] Fig. 9 It is a diagram showing a substrate processing apparatus according to a modified example.

[0021] Fig.10 This is a diagram showing an example of the temperature distribution of the liquid film formed on the first main surface of the substrate.

[0022] Fig.11 It is a diagram showing a first example of the nozzle of the gas supply unit.

[0023] Fig.12 It is a diagram showing a second example of the nozzle of the gas supply unit.

[0024] Fig.13 It is a diagram showing a third example of the nozzle of the gas supply unit.

[0025] Fig.14 It is a diagram showing a fourth example of the nozzle of the gas supply unit.

[0026] Fig.15 It is a diagram showing a fifth example of the nozzle of the gas supply unit.

[0027] Fig.16It is a diagram showing a sixth example of the nozzle of the gas supply unit.

[0028] Fig.17 It is along Fig.16 Cross-sectional view along line XVII-XVII. DETAILED DESCRIPTION

[0029] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. In addition, in each of the drawings, the same or corresponding structures are denoted by the same reference numerals, and description thereof may be omitted.

[0030] The substrate processing method includes, for example, forming a liquid film of a chemical liquid on a first main surface (e.g., upper surface) of a substrate, replacing the liquid film of the chemical liquid with a liquid film of a rinsing liquid, replacing the liquid film of the rinsing liquid with a liquid film of a drying liquid, and exposing the first main surface from the liquid film of the drying liquid. These processes are performed in the same processing container. The chemical liquid, the rinsing liquid, and the drying liquid are also collectively referred to as processing liquid.

[0031] The chemical liquid is supplied to the center of the first main surface of the rotating substrate, and is expanded to the entire radial direction of the first main surface by centrifugal force to form a liquid film. As the chemical liquid, for example, BHF (buffered hydrofluoric acid) is used. A plurality of chemical liquids may be supplied in turn, in which case, a liquid film of the rinse liquid is also formed between the formation of the liquid film of the first chemical liquid and the formation of the liquid film of the second chemical liquid.

[0032] The rinse liquid is supplied to the center of the first main surface of the rotating substrate, and is expanded to the entire radial direction of the first main surface by centrifugal force to replace the liquid contained in the liquid film with the rinse liquid. The rinse liquid rinses away the residual liquid on the first main surface. As the rinse liquid, pure water such as DIW (deionized water) is used.

[0033] The drying liquid is supplied to the center of the first main surface of the rotating substrate, and the washing liquid contained in the liquid film is replaced with the drying liquid by the centrifugal force to expand to the entire radial direction of the first main surface. As the drying liquid, a drying liquid having a surface tension lower than that of the washing liquid is used. The collapse of the concave-convex pattern caused by the surface tension can be suppressed. The drying liquid is, for example, IPA (isopropyl alcohol) or the like.

[0034] After the liquid film of the drying liquid is formed, the first main surface of the substrate is exposed from the liquid film of the drying liquid. The drying liquid is thrown out from the first main surface by the rotation of the substrate. At this time, the supply position of the drying liquid can also be moved from the center to the periphery of the first main surface. By moving the supply position of the drying liquid, an opening is formed in the center of the liquid film of the drying liquid, and the opening gradually expands from the center position to the peripheral position. In order to suppress the opening edge of the liquid film of the drying liquid, a drying gas such as nitrogen can also be supplied to the opening edge. The supply position of the drying gas moves following the supply position of the drying liquid.

[0035] In addition, when the liquid medicine is supplied, the liquid film of the liquid medicine vaporizes to generate liquid medicine vapor. If the liquid medicine vapor goes around from the first main surface of the substrate to the second main surface (e.g., the lower surface) in the opposite direction to the first main surface, particles will be generated on the second main surface. The particles are mainly generated on the peripheral portion of the second main surface. In this specification, the peripheral portion is, for example, a portion within 50 mm from the periphery.

[0036] In order to suppress the generation of particles, it is effective to supply a rinse liquid to the second main surface of the substrate while supplying a chemical liquid to the first main surface of the substrate. However, since the chemical liquid and the rinse liquid are supplied to the substrate at the same time, the treated chemical liquid mixes with the rinse liquid, causing the concentration of the chemical liquid to change. If the concentration of the chemical liquid changes, the performance of the chemical liquid, such as the etching rate, changes. As a result, it is difficult to reuse the chemical liquid.

[0037] Therefore, in this embodiment, when a predetermined chemical liquid or the like to be reused is supplied to the first main surface of the substrate, a gas is supplied to the second main surface of the substrate. The supplied gas spreads along the second main surface of the substrate, and the vapor of the chemical liquid is prevented from bypassing the second main surface. Therefore, the generation of particles on the second main surface can be suppressed. In addition, since the chemical liquid and the gas are supplied to the substrate at the same time, the change in the concentration of the chemical liquid can be suppressed compared to the case where the chemical liquid and the rinse liquid are supplied to the substrate at the same time. This is because the chemical liquid and the gas are hardly mixed.

[0038] As a predetermined liquid medicine for reuse, for example, BHF can be cited. BHF is used for etching of oxide films, etc. BHF is expensive, so if it is reused, the cost can be reduced. In addition to the cost reduction, waste liquid can also be reduced. In addition, the predetermined liquid medicine for reuse is not limited to BHF, and can also be DHF (diluted hydrofluoric acid), or DSP (diluted sulfuric peroxide), etc.

[0039] Next, refer to Figure 1 , the substrate processing apparatus 1 of this embodiment will be described. Figure 1 In the diagram, the X-axis direction, the Y-axis direction, and the Z-axis direction are mutually perpendicular directions. The X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is a vertical direction.

[0040] The substrate processing device 1 is used to process a substrate W. The substrate W includes, for example, a silicon wafer or a compound semiconductor wafer. In addition, the substrate W may also be a glass substrate. The substrate processing device 1 includes, for example, a holding unit 2, a rotating mechanism 3, a first liquid supply unit 4, a recovery unit 5, a circulation path 6, a gas supply unit 7, a second liquid supply unit 8, and a control unit 9.

[0041] The holding portion 2 is used to hold the substrate W. The substrate W has a first main surface Wa and a second main surface Wb in the opposite direction to the first main surface Wa. The holding portion 2 holds the substrate W horizontally, for example, with the first main surface Wa of the substrate W facing upward. The holding portion 2 has a base plate 21 that forms a space between the base plate 21 and the second main surface Wb of the substrate W, and an opening and closing claw 22 that grips the periphery of the substrate W. The base plate 21 is disc-shaped and arranged horizontally. A hole is formed in the center portion of the base plate 21, and the fluid supply shaft 11 is arranged in the hole. A plurality of opening and closing claws 22 are arranged at intervals along the periphery of the base plate 21.

[0042] The rotating mechanism 3 is used to rotate the holding portion 2. The rotating mechanism 3 includes, for example, a rotating shaft 31 extending downward from the center of the base plate 21 of the holding portion 2, a rotating motor 32 for rotating the rotating shaft 31, and a belt 33 for transmitting the rotational driving force of the rotating motor 32 to the rotating shaft 31. The rotating shaft 31 is cylindrical, and the fluid supply shaft 11 is arranged inside the rotating shaft 31. The fluid supply shaft 11 does not rotate together with the rotating shaft 31.

[0043] The first liquid supply unit 4 is used to supply the first processing liquid to the first main surface Wa of the substrate W held by the holding unit 2. The first liquid supply unit 4 includes, for example, a nozzle 41 for spraying the first processing liquid, a moving mechanism 42 for moving the nozzle 41 in the radial direction of the substrate W, and a supply line 43 for supplying the first processing liquid to the nozzle 41. The nozzle 41 is provided above the holding unit 2, and the nozzle 41 has a spray port for spraying the first processing liquid downward.

[0044] The moving mechanism 42, for example, has a rotating arm 42a for holding the nozzle 41 and a rotating mechanism 42b for rotating the rotating arm 42a. The rotating mechanism 42b may also serve as a mechanism for raising and lowering the rotating arm 42a. The rotating arm 42a is horizontally arranged, and holds the nozzle 41 at one end in the long side direction, and the rotating arm 42a rotates around a rotating shaft extending downward from the other end in the long side direction. In addition, the moving mechanism 42 may also have a guide rail and a linear motion mechanism instead of the rotating arm 42a and the rotating mechanism 42b. The guide rail is horizontally arranged, and the linear motion mechanism is used to move the nozzle 41 along the guide rail.

[0045] An on-off valve 45 for opening and closing the flow path of the first processing liquid and a flow controller 46 for controlling the flow rate of the first processing liquid are provided in the middle of the supply line 43. The on-off valve 45 and the flow controller 46 are provided for each type of the first processing liquid.

[0046] The first processing liquid is a processing liquid supplied to the first main surface Wa of the substrate W. As the first processing liquid, for example, a first chemical liquid, a second chemical liquid, a rinse liquid, and a drying liquid are used. The first chemical liquid is BHF, and the second chemical liquid is SC1 (a mixture of hydrogen peroxide and ammonium hydroxide).

[0047] In addition, the type of the first treatment liquid is not particularly limited. Further, in Figure 1 , multiple types of the first treatment liquid are ejected from one nozzle 41, but they may also be ejected from different nozzles 41. When the number of nozzles 41 is plural, multiple moving mechanisms 42 may be provided so that the multiple nozzles 41 can move independently.

[0048] The recovery unit 5 recovers the used first treatment liquid used in the treatment of the substrate W. In addition, the recovery unit 5 also recovers the second treatment liquid described later. The recovery unit 5 is, for example, a cup and includes a cylindrical portion 51, a bottom cover portion 52, and an inclined portion 53. The cylindrical portion 51 has an inner diameter larger than the diameter of the substrate W and is vertically arranged. The bottom cover portion 52 closes the opening at the lower end of the cylindrical portion 51. The inclined portion 53 is formed over the entire circumference of the upper end of the cylindrical portion 51 and slopes upward more toward the radially inner side of the cylindrical portion 51. A drain pipe 54 for discharging the first treatment liquid and the like accumulated inside the cup and an exhaust pipe 55 for discharging the gas accumulated inside the cup are provided in the bottom cover portion 52.

[0049] The circulation path 6 is for returning the first treatment liquid recovered by the recovery unit 5 to the first liquid supply unit 4. The first liquid supply unit 4 supplies the first treatment liquid returned to the first liquid supply unit 4 through the circulation path 6 to the first main surface Wa of another substrate W and reuses it for the treatment of the substrate W. The reused first treatment liquid is, for example, the first chemical solution. The second chemical solution, the rinsing liquid, and the drying liquid are discarded without being returned to the first liquid supply unit 4 after being recovered by the recovery unit 5 and are not reused. The circulation path 6 has a buffer tank 61 and the like in the middle thereof. The buffer tank 61 stores, for example, the used first chemical solution.

[0050] The gas supply unit 7 supplies gas to the second main surface Wb of the substrate W held by the holding unit 2. As the gas, an inert gas such as N2 gas is used. The gas supply unit 7 has, for example, a nozzle 71 for ejecting N2 gas and a supply line 72 for supplying N2 gas to the nozzle 71. The nozzle 71 is provided, for example, at the upper end of the fluid supply shaft 11 and has an ejection port for ejecting N2 gas upward. This ejection port may also eject N2 gas obliquely upward toward the center of the second main surface Wb of the substrate W.

[0051] An opening / closing valve 75 for opening and closing the flow path of N2 gas and a flow rate controller 76 for controlling the flow rate of N2 gas are provided in the middle of the supply line 72. Multiple opening / closing valves 75 and flow rate controllers 76 may also be provided to switch the flow rate of N2 gas. A set of the opening / closing valve 75 and the flow rate controller 76 supplies N2 gas with a flow rate Q1 to the nozzle 71. Another set of the opening / closing valve 75 and the flow rate controller 76 supplies N2 gas with a flow rate Q2 (Q2 < Q1) to the nozzle 71.

[0052] In addition, a temperature adjustment mechanism 77 for adjusting the temperature of the N2 gas is provided in the middle of the supply line 72. The temperature adjustment mechanism 77 includes a heating mechanism for heating the N2 gas. The temperature adjustment mechanism 77 can suppress a drop in the temperature of the substrate W caused by the supply of the N2 gas.

[0053] The second liquid supply unit 8 supplies the second processing liquid to the second main surface Wb of the substrate W held by the holding unit 2. The second liquid supply unit 8 includes, for example, nozzles 81A and 81B for ejecting the second processing liquid and supply lines 82A and 82B for supplying the second processing liquid to the nozzles 81A and 81B.

[0054] The nozzles 81A and 81B are provided at the upper end of the fluid supply shaft 11 and have a discharge port for discharging the second processing liquid upward. The nozzles 81A and 81B are arranged near the center of the second main surface Wb so as to form a liquid film on the entire second main surface Wb of the rotating substrate W.

[0055] The supply lines 82A and 82B are provided with an on-off valve 85 for opening and closing the flow path of the second processing liquid and a flow controller 86 for controlling the flow rate of the second processing liquid. The on-off valve 85 and the flow controller 86 are provided for each type of the second processing liquid.

[0056] The second processing liquid is a processing liquid supplied to the second main surface Wb of the substrate W. The nozzle 81A ejects the second chemical liquid or the rinse liquid as the second processing liquid. On the other hand, the nozzle 81B ejects the rinse liquid as the second processing liquid.

[0057] In addition, there is no particular limitation on the type of the second processing liquid. In addition, there is no particular limitation on the number of nozzles. Multiple types of second processing liquids may be ejected from one nozzle or from different nozzles.

[0058] The control unit 9 controls the rotating mechanism 3, the first liquid supply unit 4, the gas supply unit 7, the second liquid supply unit 8, etc. The control unit 9 is, for example, a computer, and includes a storage medium 92 such as a memory and a CPU (Central Processing Unit) 91. The storage medium 92 stores a program for controlling various processes performed in the substrate processing apparatus 1. The control unit 9 controls the operation of the substrate processing apparatus 1 by causing the CPU 91 to execute the program stored in the storage medium 92.

[0059] Next, refer to Figure 2 The substrate processing method of this embodiment will be described below. Figure 2 Each process shown in FIG. 1 is implemented under the control of the control unit 9. Figure 2In S101 to S106 , the rotating mechanism 3 rotates the holding unit 2 to rotate the substrate W held by the holding unit 2 .

[0060] exist Figure 2 In S101, Figure 3 As shown, the nozzle 41 supplies the first chemical liquid L1 to be reused to the first main surface Wa of the substrate W. The first chemical liquid L1 is supplied to the center of the first main surface Wa, and is wetted and spread to the entire first main surface Wa by centrifugal force to form a liquid film F1. The first chemical liquid L1 is, for example, BHF. In addition, as described above, the first chemical liquid L1 to be reused is not limited to BHF.

[0061] In addition, in S101, the nozzle 71 supplies N2 gas to the second main surface Wb of the substrate W. The N2 gas spreads along the second main surface Wb of the substrate W, and suppresses the vapor of the first chemical liquid L1 from bypassing the second main surface Wb. Therefore, it is possible to suppress the generation of particles on the second main surface Wb. In addition, unlike the case where a rinse liquid or the like is supplied to the second main surface Wb, it is possible to prevent the first chemical liquid L1 from mixing with the rinse liquid or the like, thereby suppressing the change in the concentration of the first chemical liquid L1. Therefore, it is possible to suppress the change in the performance of the first chemical liquid L1, so that the first chemical liquid L1 can be reused.

[0062] The flow rate of N2 gas is set by experiments to prevent the vapor of the first chemical liquid L1 from bypassing the second main surface Wb. The flow rate Q1 of N2 gas in S101 is larger than the flow rate Q2 of N2 gas in other S102 to S106. Q1 is, for example, 10 L / min to 60 L / min, and Q2 is, for example, 0.5 L / min to 2 L / min.

[0063] In addition, in S101, the control unit 9 prohibits the supply of the second processing liquid to the second main surface Wb through the nozzles 81A and 81B. The liquid that is prohibited from being supplied is a liquid different from the predetermined first liquid L1 to be reused, such as a second liquid and a rinse liquid. Since the supply of the second liquid and the rinse liquid is prohibited, the change in the concentration of the first liquid can be suppressed. In addition, in the absence of the second liquid supply unit 8, it is of course not necessary to prohibit the supply of the second processing liquid.

[0064] In addition, in S101, the control unit 9 can use the sensor 12 (refer to Figure 1 ) to measure the temperature of the liquid film F1 of the first chemical liquid L1, and adjust the temperature of the N2 gas based on the measured temperature of the liquid film F1. The sensor 12 is, for example, an infrared sensor. By adjusting the temperature of the N2 gas, the temperature drop of the substrate W caused by the supply of the N2 gas can be suppressed.

[0065] Then, in Figure 2 In S102, Figure 4As shown, the nozzle 41 supplies the rinse liquid L3 to the first main surface Wa of the substrate W. The rinse liquid L3 is supplied to the center of the first main surface Wa, and spreads to the entire first main surface Wa by centrifugal force to replace the first chemical liquid L1, forming a liquid film F3 of the rinse liquid L3. The rinse liquid L3 is, for example, DIW.

[0066] In addition, in S102, the nozzle 81A supplies the rinse liquid L3 to the second main surface Wb of the substrate W. The rinse liquid L3 is supplied to the center of the second main surface Wb, and spreads to the entire second main surface Wb by centrifugal force to form a liquid film F3. The liquid film F3 is formed on both the first main surface Wa and the second main surface Wb.

[0067] In addition, in S102, the nozzle 71 ejects N2 gas so that the rinse liquid L3 does not enter the nozzle 71. The flow rate of the N2 gas is Q2. By reducing the flow rate of the N2 gas from Q1 to Q2, the temperature drop of the substrate W caused by the supply of the N2 gas can be suppressed. Similar to S102, in S103 to S106 described later, the nozzle 71 also ejects N2 gas so that various processing liquids do not enter the nozzle 71.

[0068] Then, in Figure 2 In S103, Figure 5 As shown, the nozzle 41 supplies the second chemical liquid L2 to the first main surface Wa of the substrate W. The second chemical liquid L2 is supplied to the center of the first main surface Wa, and spreads to the entire first main surface Wa by centrifugal force to replace the rinse liquid L3, forming a liquid film F2 of the second chemical liquid L2. The second chemical liquid L2 is, for example, SC1.

[0069] In addition, in S103, the nozzle 81A supplies the second chemical liquid L2 to the second main surface Wb of the substrate W. The second chemical liquid L2 is supplied to the center of the second main surface Wb, and spreads to the entire second main surface Wb by centrifugal force to replace the rinse liquid L3, forming a liquid film F2 of the second chemical liquid L2. The liquid film F2 is formed on both the first main surface Wa and the second main surface Wb.

[0070] Then, in Figure 2 In S104, again Figure 4 As shown, the nozzle 41 supplies the rinse liquid L3 to the first main surface Wa of the substrate W, and the nozzle 81A supplies the rinse liquid L3 to the second main surface Wb of the substrate W. A liquid film F3 of the rinse liquid L3 is formed on both the first main surface Wa and the second main surface Wb.

[0071] Then, in Figure 2 In S105, Figure 6As shown, the nozzle 41 supplies the drying liquid L4 to the first main surface Wa of the substrate W. The drying liquid L4 is supplied to the center of the first main surface Wa, and spreads to the entire first main surface Wa by centrifugal force to replace the rinse liquid L3, forming a liquid film F4 of the drying liquid L4. The drying liquid L4 is, for example, IPA.

[0072] In addition, in S105, the nozzle 81B supplies the rinse liquid L3 to the second main surface Wb of the substrate W. The rinse liquid L3 is supplied to the center of the second main surface Wb, and is wetted and spread to the entire second main surface Wb by centrifugal force to form a liquid film F3. The liquid film F3 of the rinse liquid L3 is formed on the second main surface Wb, and the liquid film F4 of the drying liquid L4 is formed on the first main surface Wa.

[0073] Then, in Figure 2 In S106, Figure 7 As shown, the rotating mechanism 3 rotates the substrate W to throw the drying liquid L4 remaining on the first main surface Wa of the substrate W and the rinsing liquid L3 remaining on the second main surface Wb of the substrate W off the substrate W. Thus, the substrate W is dried.

[0074] In S106 , as described above, the supply position of the drying liquid L4 may be moved from the center to the periphery of the first main surface Wa. An opening is formed in the center of the liquid film F4 of the drying liquid L4 , and the opening gradually expands from the center to the periphery.

[0075] Next, refer to Figure 8 , the relationship between the flow rate Q1 of the N2 gas supplied to the second main surface and the number of particles generated on the second main surface is described. Figure 8 In the experiment, we implemented Figure 2 S101, S104, S105 and S106 shown. Not implemented Figure 2 S102 and S103 shown.

[0076] Figure 8 The experimental conditions are as follows. Q1 is 0 L / min, 10 L / min, 20 L / min, 30 L / min, 40 L / min, 50 L / min or 60 L / min. On the other hand, Q2 is 2 L / min. The first chemical liquid is BHF, the temperature of BHF is 20°C, the flow rate of BHF is 1.0 L / min, and the supply time of BHF is 25 seconds. The rinse liquid is DIW, the temperature of DIW is 20°C, the flow rate of DIW is 1.5 L / min, and the supply time of DIW is 30 seconds. The drying liquid is IPA.

[0077] Figure 8The experimental results are as follows. When Q1 is 10L / min, the number of particles generated on the second main surface Wb is reduced to about 1 / 20 compared to the case where Q1 is 0L / min. In addition, the larger the Q1, the smaller the number of particles. However, when Q1 exceeds 50L / min, there is almost no reduction in the number of particles. In order to suppress the useless consumption of N2 gas, Q1 can be 50L / min or less.

[0078] Next, refer to Fig. 9 , the substrate processing apparatus 1 involved in the modification is described. The following mainly describes the differences between the substrate processing apparatus 1 of this modification and the substrate processing apparatus 1 of the above-mentioned embodiment. The gas supply unit 7 of this modification has a plurality of nozzles 71A, 71B, a plurality of supply lines 72A, 72B and a plurality of temperature adjustment mechanisms 77A, 77B.

[0079] The nozzle 71A, like the nozzle 71 of the above-mentioned embodiment, has a nozzle for ejecting N2 gas toward the center of the second main surface Wb of the substrate W. The center refers to, for example, a portion within 50 mm from the center. The nozzle 71A is, for example, disposed at the upper end of the fluid supply shaft 11, and ejects N2 gas vertically or obliquely relative to the second main surface Wb.

[0080] On the other hand, the nozzle 71B has a nozzle for ejecting N2 gas toward the peripheral portion of the second main surface Wb of the substrate W. The peripheral portion refers to, for example, a portion within 50 mm from the peripheral edge. The nozzle 71B is, for example, provided on the base plate 21 of the holding portion 2 and rotates together with the holding portion 2. The nozzle 71B ejects N2 gas vertically or obliquely relative to the second main surface Wb.

[0081] Since nozzle 71B forms the N2 gas flow around the second main surface Wb of substrate W, it is possible to further suppress the vapor of first chemical liquid L1 from wrapping around second main surface Wb. Therefore, it is possible to further suppress the generation of particles on second main surface Wb.

[0082] exist Figure 2In S101, the control unit 9 may measure the temperature of the liquid film F1 of the first chemical liquid L1 at a plurality of points through the sensor 12, and when the measured temperature amplitude (amplitude between the maximum value and the minimum value) of the liquid film F1 is above the threshold value, the temperature of the N2 gas is adjusted through the temperature adjustment mechanisms 77A and 77B so that the temperature amplitude is less than the threshold value. By adjusting the temperature of the N2 gas, the temperature unevenness of the liquid film F1 can be reduced, thereby suppressing the uneven processing of the substrate W. When the measured temperature amplitude of the liquid film F1 is above the threshold value, the control unit 9 changes the temperature of the N2 gas through at least one of the temperature adjustment mechanisms 77A and 77B. On the other hand, when the measured temperature amplitude of the liquid film F1 is less than the threshold value, the control unit 9 may not change the temperature of the N2 gas through the temperature adjustment mechanisms 77A and 77B.

[0083] Without adjusting the temperature of N2 gas, Fig.10 As shown by the double-dashed line in FIG. 1 , the temperature of the liquid film F1 decreases as it moves from the center of the substrate W to the periphery. Therefore, the temperature of the liquid film F1 is measured at multiple points in the radial direction of the substrate W, and when the measured temperature amplitude of the liquid film F1 is greater than the threshold value, the control unit 9 controls the temperature of the N2 gas ejected from the nozzle 71B to be higher than the temperature of the N2 gas ejected from the nozzle 71A. As a result, Fig.10 In addition, when the measured temperature range of the liquid film F1 is smaller than the threshold value, the control unit 9 may control the temperature of the N2 gas ejected from the nozzle 71B to be the same as the temperature of the N2 gas ejected from the nozzle 71A.

[0084] The plurality of temperature regulating mechanisms 77A and 77B independently regulate the temperature of the N2 gas ejected from the plurality of nozzles 71A and 71B. It is easy to regulate the temperature distribution of the liquid film F1. However, even if the number of the temperature regulating mechanism 77 is one, the temperature of the N2 gas ejected from the nozzle 71B can be made higher than the temperature of the N2 gas ejected from the nozzle 71A. For example, when the temperature regulating mechanism 77B heats the N2 gas ejected from the nozzle 71B, there may be no other temperature regulating mechanism 77A.

[0085] Next, refer to Fig.11 The arrangement of the nozzle 71B is described below. The nozzle 71B is arranged in a plurality of dots along the periphery of the substrate W held by the holding unit 2. The dot-shaped nozzle 71B has a circular discharge port. The N2 gas flow can be formed at the periphery of the second main surface Wb over the entire circumference of the substrate W.

[0086] In addition, you can Fig.12 As shown, a plurality of nozzles 71B are arranged in, for example, an arc shape along the periphery of the substrate W held by the holding unit 2. The arc-shaped nozzles 71B have an arc-shaped discharge port.

[0087] In addition, you can also Fig.13 As shown, the nozzle 71B is arranged in, for example, an annular shape along the periphery of the substrate W held by the holding unit 2. The annular nozzle 71B has an annular discharge port.

[0088] You can also Fig.14 As shown in FIG. 1 , in addition to the nozzles 71A and 71B, a nozzle 71C is provided. The nozzle 71C is disposed between the nozzle 71A and the nozzle 71B and is disposed concentrically with the nozzle 71B.

[0089] The nozzle 71C can be arranged in the circumferential direction of the substrate W held by the holding portion 2 as follows: Fig.14 As shown, multiple points can be arranged as shown. Fig.15 As shown, a plurality of nozzles are arranged in an arc shape, but although not shown, they may be arranged in an annular shape. That is, the ejection outlet of the nozzle 71C may be circular, arc-shaped, or annular.

[0090] Next, refer to Fig.16 and Fig.17 The configuration of the nozzle 71B is described below. Fig.17 As shown, the nozzle 71B protrudes from the upper surface of the base plate 21 of the holder 2 and ejects N2 gas in parallel with the second main surface Wb of the substrate W held by the holder 2 and radially outward of the substrate W. The vapor of the first chemical liquid L1 can be further prevented from bypassing the second main surface Wb.

[0091] In addition, the nozzle 71B may be Fig.16 In other words, the ejection outlet of the nozzle 71B may be circular, arc-shaped, or annular.

[0092] Alternatively, the nozzle 71B may be Fig.16 As shown in the figure, the nozzle 71B is protruded from the upper surface of the base plate 21 of the holding part 2, but it can also be protruded from the upper surface of the fluid supply shaft 11. In the former case, the nozzle 71B rotates together with the base plate 21. On the other hand, in the latter case, the nozzle 71B does not rotate together with the base plate 21.

[0093] The above describes the embodiments of the substrate processing device and the substrate processing method involved in the present disclosure, but the present disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions and combinations can be made within the scope of the claims. These also belong to the technical scope of the present disclosure.

[0094] This application claims the benefit of priority based on Tokugan Application No. 2020-029483 filed with the Japan Patent Office on February 25, 2020, the entire contents of which are incorporated herein by reference.

[0095] Description of Reference Numerals

[0096] 1: substrate processing device; 2: holding part; 4: first liquid supply part (liquid supply part); 5: recovery part; 6: circulation path; 7: gas supply part; 9: control part; W: substrate; Wa: first main surface; Wb: second main surface.

Claims

1. A substrate processing device, comprising: a holding portion for holding a substrate; a liquid supply portion for supplying a processing liquid to a first main surface of the substrate held by the holding portion; a recovery unit that recovers the used processing liquid used in the processing of the substrate; a circulation path for returning the treatment liquid recovered by the recovery unit to the liquid supply unit; a gas supply unit configured to supply gas to a second main surface of the substrate held by the holding unit and located in an opposite direction to the first main surface; and a control unit that controls the liquid supply unit and the gas supply unit, in, The control unit supplies the gas to the second main surface when the predetermined processing liquid returned to the liquid supply unit through the circulation path is supplied to the first main surface. The substrate processing apparatus further includes a sensor for measuring a temperature of a liquid film of the predetermined processing liquid formed on the first main surface of the substrate and returned to the liquid supply unit through the circulation path. The gas supply unit includes a temperature adjustment mechanism for adjusting the temperature of the gas. The control unit adjusts the temperature of the gas by the temperature adjustment mechanism based on the temperature of the liquid film measured by the sensor, and supplies the gas at the adjusted temperature to the second main surface of the substrate.

2. The substrate processing device according to claim 1, characterized in that: further comprising a second liquid supply portion for supplying a second processing liquid to the second main surface of the substrate held by the holding portion, The control unit prohibits supplying the second processing liquid to the second main surface when supplying the predetermined processing liquid returned to the liquid supply unit through the circulation path to the first main surface. The prohibited second processing liquid is different from the predetermined processing liquid that is returned to the liquid supply unit through the circulation path.

3. The substrate processing device according to claim 1, characterized in that: The control unit measures the temperature of the liquid film at multiple points through the sensor, and when the temperature amplitude of the liquid film is above a threshold value, adjusts the temperature of the gas through the temperature adjustment mechanism, and supplies the gas at the adjusted temperature to the second main surface of the substrate.

4. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that: The gas supply unit includes a nozzle configured to eject the gas toward a peripheral edge portion of the second main surface of the substrate held by the holding unit.

5. The substrate processing device according to claim 4, characterized in that: The nozzles are arranged in a circular ring shape, in a plurality of circular arc shapes, or in a plurality of dot shapes along the periphery of the substrate held by the holding portion.

6. The substrate processing device according to claim 4, characterized in that: The nozzle ejects the gas perpendicularly or obliquely with respect to the second main surface of the substrate held by the holding portion.

7. The substrate processing device according to claim 4, characterized in that: The nozzle ejects the gas in parallel with the second main surface of the substrate held by the holding portion and outward in the radial direction of the substrate.

8. A substrate processing method, comprising: supplying a processing liquid to a first main surface of a substrate; and recovering the used processing liquid used in processing the substrate; and reusing the recovered processing liquid in processing other substrates. The substrate processing method includes: When the predetermined processing liquid to be reused is supplied to the first main surface of the substrate, a gas is supplied to a second main surface of the substrate which is opposite to the first main surface. The substrate processing method further comprises: measuring a temperature of a liquid film of the processing liquid to be reused formed on the first main surface of the substrate; and When the gas is supplied to the second main surface of the substrate, the temperature of the gas is adjusted based on the measured temperature of the liquid film.

9. The substrate processing method according to claim 8, characterized in that: include: supplying a second processing liquid different from the predetermined processing liquid to be reused to the second main surface of the substrate; as well as When the processing liquid to be reused is supplied to the first main surface of the substrate, supply of the second processing liquid to the second main surface of the substrate is prohibited.

10. The substrate processing method according to claim 8 or 9, characterized in that: Determining the temperature of the liquid film includes determining the temperature of the liquid film at a plurality of points, The temperature of the gas is adjusted when the temperature width of the liquid film is equal to or greater than a threshold value.

Images