Dynamic thermal management method and device for semiconductor equipment based on thermoelectric effect

Abstract

The present invention provides a dynamic thermal management method and device for semiconductor devices based on thermoelectric effect, which mainly uses a thermoelectric cooling device based on thermoelectric effect to actively control the thermal slope of the semiconductor device for cooling. When the current thermal slope of the semiconductor device is greater than a fixed slope threshold, the parameter calculation circuit is started to perform optimization calculations to obtain the working current or working voltage of the thermoelectric cooling device, and the thermoelectric cooling device is started by a dynamic thermal management circuit to cool the semiconductor device in time, and its thermal slope is controlled to reach or even be lower than the fixed slope threshold. The present invention realizes dynamic thermal management of semiconductor devices while maintaining or even improving the original power of the semiconductor device, so that the semiconductor device can maintain a high-power working state for a longer period of time, and provides a new idea for thermal management of high-frequency semiconductor devices under high-performance working conditions. At the same time, the method can provide accurate and real-time cooling for local hot spots, with high reliability and strong applicability.

Description

Technical Field

[0001] The present invention belongs to the technical field of thermal management of semiconductor devices, and in particular relates to a dynamic thermal management method and device for semiconductor devices based on thermoelectric effect. Background Art

[0002] As high-repetition-rate semiconductor devices gradually develop towards miniaturization and high packaging density, the power density of the devices continues to increase. Excessive power will lead to excessively high peak temperatures of semiconductor devices, further leading to an increase in thermal leakage power and an increase in thermal failures, thereby shortening the life of semiconductor electronic devices. Therefore, it is necessary to perform thermal management on semiconductor devices and remove the heat generated by the devices in a timely manner, which is of great significance for improving the life of semiconductor electronic devices.

[0003] At present, advanced thermal management methods mainly include passive heat dissipation technologies represented by heat spreaders, heat pipes, graphene, carbon nanotubes and diamond substrate heat conduction, and active heat dissipation technologies represented by microchannels and impinging jets. However, the basic principle of these heat dissipation technologies is to reduce the average temperature of the equipment to achieve the purpose of thermal management, and there are limitations such as uneven cooling, high cost, low reliability, and large size. It is difficult to provide transient and real-time cooling to local hot spots whose time scale is much smaller than the thermal time constant of the device / component. Taking microfluidic heat dissipation technology as an example, due to factors such as the cooling fluid state, packaging sealing process and insulation withstand voltage, microfluidic heat dissipation technology is more of a remote cooling of chips or components, which cannot meet the instantaneous near-node heat transport needs of chips or components. In particular, under high repetition frequency conditions, the heat generated by semiconductor devices is related to parameters such as the clock frequency and operating voltage of the chip or component. It takes a certain amount of time (greater than the thermal time constant of the chip or component) for the limited-size thermal disturbance inside the chip or component to diffuse through a solid layer of a certain thickness to the microfluidic position. As a result, the heat generated instantaneously by the chip or component cannot be dissipated in time, further generating local high temperatures and forming a huge temperature gradient, thereby causing thermal fatigue failure problems caused by thermal stress fluctuations.

[0004] At present, dynamic thermal management strategies / methods such as thermal throttling, dynamic voltage and frequency scaling, or thread / activity migration have been developed to control device overheating. When the device reaches a given temperature threshold, the device adjusts operating parameters and reduces power to achieve the purpose of cooling, such as reducing the operating voltage or operating frequency of the device. However, the operating voltage and operating frequency of the device are closely related to the performance of the device. Therefore, when the operating voltage and operating frequency of the device are reduced, the performance of the device may suffer a uniform drop, especially in interactive mobile devices that respond in real time. When the temperature rises suddenly and then drops rapidly, it will trigger unnecessary restriction actions of the device. Therefore, the existing dynamic thermal management strategies / methods such as thermal throttling, dynamic voltage and frequency scaling, or thread / activity migration mainly achieve the purpose of thermal management by sacrificing device performance.

[0005] Therefore, there is a need for an improved dynamic thermal management method that can achieve high performance operation of high repetition rate semiconductor devices. Summary of the invention

[0006] In view of this, the present invention provides a dynamic thermal management method and device for semiconductor devices based on the thermoelectric effect. The method and device utilize thermoelectric cooling devices to actively control the thermal slope of the device, which can maintain the high-power operating state of the semiconductor device for a longer period of time and significantly improve the performance of the device. It can even intentionally increase the power of the key processes of the device to above the nominal limit as required, thereby improving the transient performance of the device.

[0007] To achieve this goal, the present invention adopts the following technical solution: a dynamic thermal management method of a semiconductor device based on thermoelectric effect, the method comprising:

[0008] S1: obtaining the current sampling temperature of the heat source of the semiconductor device to be monitored through the temperature measurement component;

[0009] S2: Calculate the current thermal slope based on the current sampled temperature and the stored previous sampled temperature;

[0010] S3: Determine whether the current thermal slope is greater than a predefined fixed thermal slope threshold, if so, execute step S4, if not, execute step S1;

[0011] S4: Establish a thermal model between the parameters of the thermoelectric cooling device and the operating parameters of the semiconductor device to be tested, and use a fixed slope threshold as the optimization target to perform optimal calculation on the thermal model using a target optimization algorithm to calculate the optimal operating current or voltage of the thermoelectric cooling device and the optimal parameters of the semiconductor device to be monitored;

[0012] S5: enabling the thermoelectric cooling device to work according to the optimal working current or working voltage calculated in step S4; and adjusting the semiconductor device to be monitored according to the optimal parameters of the semiconductor device to be monitored calculated in step S4, so that the semiconductor device to be monitored keeps working at the original power budget or higher than the original power budget;

[0013] S6: repeat the above steps S1 to S5 until the semiconductor device no longer needs dynamic thermal management.

[0014] Preferably, the fixed slope threshold in step S3 is smaller than a thermal slope value calculated based on a maximum allowable temperature of the semiconductor device.

[0015] Preferably, the thermoelectric cooling device is a solid-state heat pump based on the Peltier thermoelectric effect, and the thermoelectric cooling device is integrated with a heat source of the semiconductor device to be tested.

[0016] Preferably, the thermoelectric cooling device is a bulk thermoelectric module with a thickness of 100 μm to 10 mm or a micro thermoelectric cooling film with a thickness of 1 nm to 100 μm.

[0017] Preferably, the thermal model in step S4 includes at least one heat source and at least two thermal resistors.

[0018] Preferably, the heat source of the semiconductor device is a chip or a module.

[0019] Preferably, the optimal parameter of the semiconductor device to be monitored is an optimal clock frequency or an optimal operating voltage or an optimal number of operating cores of the semiconductor device to be tested.

[0020] A dynamic thermal management device for a semiconductor device based on thermoelectric effect, the device is used to implement the above-mentioned dynamic thermal management method for a semiconductor device based on thermoelectric effect, the device comprises: a temperature sensor, a temperature readout circuit, a buffer, a thermal slope calculation circuit, a trigger detector, a parameter calculation circuit, a thermoelectric cooling device and a dynamic thermal management circuit, the temperature sensor, the temperature readout circuit, the buffer, the thermal slope calculation circuit, the trigger detector, the parameter calculation circuit, the thermoelectric cooling device and the dynamic thermal management circuit are connected in sequence.

[0021] Preferably, the parameter calculation circuit takes a fixed slope threshold as a target, uses a target optimization algorithm to perform optimal calculation on the thermal model, and calculates and obtains the optimal operating current or voltage of the thermoelectric cooling device and the optimal parameters of the semiconductor device to be monitored.

[0022] Preferably, the dynamic thermal management circuit calls the thermoelectric cooling device to start dynamic thermal management of the heat source of the monitored semiconductor device based on the optimal operating current or voltage of the thermoelectric cooling device calculated by the parameter calculation circuit, and maintains the original power of the monitored semiconductor device or increases the original power of the device based on the optimal power budget.

[0023] The beneficial effects of the present invention are as follows: the dynamic thermal management method and device of semiconductor devices based on thermoelectric effect provided by the present invention mainly utilizes a thermoelectric cooling device based on thermoelectric effect to actively control the thermal slope of the semiconductor device for cooling; when the current thermal slope of the semiconductor device is greater than a fixed slope threshold, the parameter calculation circuit is started to perform optimization calculation to obtain the working current or working voltage of the thermoelectric cooling device, and the thermoelectric cooling device is started by the dynamic thermal management circuit to cool the semiconductor device in time, and its thermal slope is controlled to reach or even be lower than the fixed slope threshold, so that the semiconductor device can still work at the original power without reducing the performance of the semiconductor device, and even according to the cooling margin of the thermoelectric cooling device, the original power of the semiconductor device can be increased, so that the semiconductor device works at a higher performance; in addition, the thermoelectric cooling device in the present invention can be integrated with the heat source of the semiconductor device, can cool the heat source in time, can provide transient and real-time cooling for local hot spots, and has high reliability, strong applicability and low cost.

[0024] Therefore, the present invention utilizes thermoelectric cooling devices to actively control the thermal slope of semiconductor equipment, and realizes dynamic thermal management of semiconductor equipment while maintaining or even improving the original power of the semiconductor equipment, so that the semiconductor equipment can maintain a high-power working state for a longer period of time, providing a new idea for thermal management of high-repetition-rate semiconductor equipment under high-performance working conditions. At the same time, the method and equipment can provide accurate and real-time cooling for local hot spots, with high reliability and strong applicability. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a flow chart of a dynamic thermal management method of a semiconductor device based on thermoelectric effect in an embodiment of the present invention;

[0026] Figure 2 A schematic diagram of the structure of a dynamic thermal management device for a semiconductor device based on thermoelectric effect in an embodiment of the present invention;

[0027] Figure 3 is a schematic diagram of the operation of the parameter calculation circuit in an embodiment of the present invention;

[0028] Figure 4 Schematic diagram of a thermal model between a chip and a thermoelectric cooling device in an embodiment of the present invention;

[0029] Figure 5 Schematic diagram of dynamic thermal management of a chip in an embodiment of the present invention;

[0030] In the figure: 101. Temperature sensor 102. Temperature readout circuit 103. Buffer 104. Thermal slope calculation circuit 105. Trigger detector 106. Parameter calculation circuit 107. Thermoelectric cooling device 108. Dynamic thermal management circuit. DETAILED DESCRIPTION

[0031] Those skilled in the art will appreciate that the embodiments described herein are intended to help readers understand the principles of the present invention, and should be understood that the protection scope of the present invention is not limited to such specific statements and embodiments. Those skilled in the art can make various other specific variations and combinations that do not deviate from the essence of the present invention based on the technical revelations disclosed by the present invention, and these variations and combinations are still within the protection scope of the present invention.

[0032] The present invention is described in detail below with reference to the accompanying drawings and specific embodiments.

[0033] A kind of Figure 1 The method for dynamic thermal management of semiconductor devices based on thermoelectric effect shown in the figure first obtains the current sampling temperature of the heat source of the semiconductor device to be monitored through a temperature measurement component; then calculates the current thermal slope based on the current temperature and the stored previous sampling temperature; then determines whether the current thermal slope is greater than a predefined fixed thermal slope threshold. If it is greater, it means that the temperature of the semiconductor device rises too fast and a cooling program needs to be started; then a thermal model between the parameters of the thermoelectric cooling device and the working parameters of the semiconductor device to be measured is established, and the fixed slope threshold is used as the optimization target. The thermal model is optimally calculated using a target optimization algorithm to calculate the optimal working current or voltage of the thermoelectric cooling device and the optimal parameters of the semiconductor device to be monitored. The thermal model here generally includes at least one heat source and two thermal resistors; then the thermoelectric cooling device is enabled to work according to the calculated optimal working current or working voltage to cool the semiconductor device; and according to the calculated optimal parameters of the semiconductor device to be monitored, the semiconductor device to be monitored is adjusted so that the semiconductor device to be monitored is kept under the original power budget or higher than the original power budget; the above process is repeated continuously until the semiconductor device does not need to be dynamically thermally managed.

[0034] The basic principle of the dynamic thermal management method for semiconductor equipment of the present invention is to use thermoelectric cooling devices to control the thermal slope of the heat source of the semiconductor equipment in real time, actively and accurately, so as to achieve the purpose of reducing the temperature of the heat source of the semiconductor equipment. This method does not sacrifice the performance of the semiconductor equipment as a premise. On the contrary, under the condition of the cooling margin of the thermoelectric cooling device, the original power of the semiconductor equipment can be appropriately improved, so that the semiconductor equipment can work at a higher performance, and even the power of the key process of the equipment can be intentionally increased to above the nominal limit according to the demand, so as to improve the transient performance of the equipment.

[0035] Dynamic thermal management devices for semiconductor devices based on thermoelectric effect such as Figure 2 As shown, the device includes: a temperature sensor 101, a temperature readout circuit 102, a buffer 103, a thermal slope calculation circuit 104, a trigger detector 105, a parameter calculation circuit 106, a thermoelectric cooling device 107 and a dynamic thermal management circuit 108. As shown in the figure, the temperature sensor 101, the temperature readout circuit 102, the buffer 103, the thermal slope calculation circuit 104, the trigger detector 105, the parameter calculation circuit 106, the thermoelectric cooling device 107 and the dynamic thermal management circuit 108 are connected in sequence.

[0036] Among them, the temperature sensor 101 is used to measure the heat source temperature of the semiconductor device to be monitored in real time. The heat source of the semiconductor device can be a chip or a module, such as: a bare chip, a packaging shell, a skin, an adapter board, etc. Since this method can also be extended to the device level, its heat source also includes components of the device that generate serious heat, such as a CPU, a GPU, etc.; the temperature readout circuit 102 is used to read the temperature sensor 101 and transmit it to the buffer 103; the buffer 103 is used to store one or more groups of sampled temperatures, including the current sampled temperature and the previous sampled temperature used to calculate the current thermal slope; the thermal slope calculation circuit 104 obtains temperature data from the buffer 103 and calculates the current thermal slope of the heat source of the semiconductor device. In one embodiment, the temperature slope is equal to the difference between the current temperature and the previous temperature divided by the difference between the current sampling time and the previous sampling time. In one embodiment, the temperature slope is equal to the difference between the current temperature and the previous temperature divided by the dynamic management period; the trigger detector 105 stores a predefined fixed thermal slope threshold, which is used to determine the size between the current thermal slope and the predefined fixed thermal slope threshold. In order to leave a certain margin, the fixed thermal slope threshold is selected to be smaller than the thermal slope value calculated based on the maximum allowable temperature of the semiconductor device; the parameter calculation circuit 106 takes the fixed slope threshold as the target, and uses the target optimization algorithm to perform optimal calculation on the thermal model to calculate the optimal operating current or voltage of the thermoelectric cooling device 107 and the optimal parameters (optimal clock frequency, optimal operating voltage, and optimal number of operating cores) of the semiconductor device to be monitored; the dynamic thermal management circuit 108 calls the thermoelectric cooling device 107 to start the dynamic thermal management of the heat source of the semiconductor device to be monitored based on the optimal operating current or voltage of the thermoelectric cooling device 107 calculated by the parameter calculation circuit 106, and maintains the original power of the semiconductor device to be monitored or increases the original power of the device based on the optimal power budget.

[0037] The thermoelectric cooling device 107 in the present invention is a solid-state heat pump based on the Peltier thermoelectric effect. When current passes through the thermoelectric material, heat is absorbed from the cold side and transferred to the hot side through the Peltier thermoelectric effect. The thermoelectric cooling device in the present invention is integrated with the heat source of the semiconductor device to be tested, and can provide transient and real-time cooling to local hot spots in a timely manner. It has high reliability, strong applicability and low cost. The thermoelectric cooling device 107 can select a bulk thermoelectric module with a thickness of 100μm to 10mm or a micro thermoelectric cooling film with a thickness of 1nm to 100μm according to actual needs.

[0038] Example 1

[0039] In this embodiment, the heat source of the semiconductor device is the processor chip. First, the temperature of the processor chip is sampled through the temperature sensor 101, and then the current thermal slope of the processor chip is calculated and compared with a pre-set fixed slope threshold, and then the subsequent parameter optimization calculation and dynamic thermal management process are started.

[0040] Figure 3 The following is an exemplary workflow diagram of the parameter calculation circuit in the dynamic thermal management process of the processor chip. First, the processor chip temperature T chip The thermal model of the thermoelectric cooling device (TEC) performance and the power characteristics of the processor chip is obtained, and the thermal slope is optimized to keep the thermal slope at a fixed slope threshold, and the TEC operating current I and the optimal allowable frequency fm of the processor chip are calculated. ax .

[0041] Thermal model of thermoelectric cooling device (TEC) performance and processor chip power characteristics Figure 4 As shown, its expression is as follows:

[0042] P chip =P dyn +P leak =CV 2 fα+V(β1T chip +β0) (1)

[0043] Among them, P chip is the processor chip power, P leak is the static power of the processor chip, which means the leakage power when the processor chip is not working. dyn is the dynamic rate of the processor chip, which indicates the additional power consumption when the processor chip is working; C is the fixed load capacitance of the processor chip, V, f are the voltage and frequency of the processor chip respectively, α is the real-time activity factor of the workload of the processor chip, β1 and β0 are the heat leakage parameters, T chip is the average temperature of the processor chip,

[0044] The average temperature of the processor chip is T chip It is expressed by the following formula:

[0045] T chip =T a +(R k，contact +R k，IHS +R con )Q H +(R k，TE +R k，contact +R k，IHS +R con )(Q C -Q Q )+(R k，chip +Rk，TIM +R k，contact )Q C (2)

[0046] Among them, T a Indicates the ambient temperature, R k,chip Represents the thermal resistance of the processor chip, R k，TIM The thermal resistance of the TIM, R k，IHS Represents the thermal resistance of the hot end heat sink of the thermoelectric cooling device, R con Represents the surface heat transfer coefficient of the hot end heat sink of the thermoelectric cooling device; R kcontact is the thermal resistance of the contact layer of the thermoelectric cooling device including the diffusion barrier layer, the electrode layer and the contact interface; R k，TE It is the thermal resistance of the thermoelectric material of the thermoelectric cooling device; Q c The heat absorbed by the cold side of the thermoelectric material of the thermoelectric refrigeration device; Q C and Q H They are the heat absorption at the cold end and the heat dissipation at the hot end of the thermoelectric refrigeration device, which can be expressed by the following formula:

[0047]

[0048]

[0049] Among them, T C and T H are the cold end temperature and hot end temperature of the thermoelectric cooling device respectively; T c and T h are the cold side temperature and hot side temperature of the thermoelectric material of the thermoelectric cooling device respectively; I is the working current of the thermoelectric cooling device; R e，contact is the thermal resistance of the contact layer including the diffusion barrier layer, electrode layer and contact interface; Q h is the heat dissipation of the thermoelectric material of the thermoelectric cooling device, Q c and Q h They are respectively expressed as follows:

[0050]

[0051]

[0052] Where S is the Seebeck coefficient of the thermoelectric material, I TE is the thermoelectric material input current, R TE It is the resistance of the thermoelectric material in the thermoelectric cooling device.

[0053] By using the above formulas (1) to (6), the thermal model of TEC performance and processor chip power characteristics can be obtained, and the optimal allowable frequency f of the processor chip can be obtained by performing target optimization through the interior point method. maxAnd the phase working current I of the thermoelectric cooling device. Then, the dynamic thermal management circuit 108 is based on the parameter f max And I calls the thermoelectric cooling device 107 to start the dynamic thermal management of the heat source of the semiconductor device to be monitored, and keeps the processor chip working at the optimal allowed frequency f max Down.

[0054] Figure 5 The schematic diagram of the dynamic thermal management (DTM) of the processor chip based on TEC active control of thermal slope is shown in the figure. The maximum allowable junction temperature T d 501 is pre-configured or pre-defined, which is the upper temperature limit of the processor chip. In order to leave a certain margin, the maximum allowable junction temperature T d 501 Select a temperature lower than the thermal burnout temperature T of the processor chip or component b The fixed slope threshold S-L502 is a constant thermal slope. To leave a certain margin, the constant thermal slope is selected to be less than the maximum allowable junction temperature T d 501 is the thermal slope value calculated. S-L502 is the upper limit for triggering dynamic thermal management based on TEC active control of thermal slope. Curve 503 is the temperature curve of the processor chip without integrated TEC, and curve 504 is the temperature curve of the processor chip with integrated TEC and dynamic thermal management based on the embodiment of the current invention.

[0055] It can be seen from the figure that the curve 504 after integrating TEC is lower than the curve 503 without integrating TEC. The temperature difference between the two is ΔT passive This is because the TEC is integrated into the TIM in the present invention, which increases the effective thermal conductivity of the TIM layer. In the thermal slope control stage 505, the current thermal slope is calculated by sampling the temperature. If the current thermal slope is greater than the fixed slope threshold S-L502, dynamic thermal management is triggered to keep the thermal slope at the fixed slope threshold as the goal. The optimal operating current / voltage of the TEC and the optimal power budget of the device are calculated by the parameter calculation circuit, and the DTM is adaptively applied based on the DTM circuit calling the TEC.

[0056] The use of TEC-based dynamic thermal management can effectively control the thermal slope at a lower level, which can effectively reduce the processor chip temperature. The temperature drop is expressed as ΔT. DTM On the other hand, due to the reduction of thermal slope, the processor chip temperature reaches the maximum allowable junction temperature T later. d 501, the time delay is represented by Δτ DTM. Therefore, without violating the temperature limit and calling the traditional dynamic thermal management strategy to reduce power, the dynamic thermal management method based on TEC active control of thermal slope can maintain high-power working state for a longer time and significantly improve device performance. Furthermore, this dynamic thermal management method creates room for improving the original power of the device. The power (operating frequency / operating voltage / number of operating cores) of key processes can be intentionally increased above the nominal limit as needed, reproducing technologies such as turbocharging and computer overclocking, and improving the transient performance of the device.

Claims

1. A dynamic thermal management method for semiconductor devices based on thermoelectric effect, characterized in that: The method comprises: S1: obtaining the current sampling temperature of the heat source of the semiconductor device to be monitored through the temperature measurement component; S2: Calculate the current thermal slope based on the current sampled temperature and the stored previous sampled temperature; S3: Determine whether the current thermal slope is greater than a predefined fixed thermal slope threshold, if so, execute step S4, if not, execute step S1; S4: Establish a thermal model between the parameters of the thermoelectric cooling device and the operating parameters of the semiconductor device to be tested, and use a fixed slope threshold as the optimization target to perform optimal calculation on the thermal model using a target optimization algorithm to calculate the optimal operating current or voltage of the thermoelectric cooling device and the optimal parameters of the semiconductor device to be monitored; S5: enabling the thermoelectric cooling device to work according to the optimal working current or working voltage calculated in step S4; and adjusting the semiconductor device to be monitored according to the optimal parameters of the semiconductor device to be monitored calculated in step S4, so that the semiconductor device to be monitored keeps working at the original power budget or higher than the original power budget; S6: repeat the above steps S1 to S5 until the semiconductor device no longer needs dynamic thermal management.

2. The dynamic thermal management method of semiconductor devices based on thermoelectric effect according to claim 1, characterized in that: The fixed slope threshold in step S3 is smaller than the thermal slope value calculated based on the maximum allowable temperature of the semiconductor device.

3. The dynamic thermal management method of semiconductor devices based on thermoelectric effect according to claim 1, characterized in that: The thermoelectric cooling device is a solid-state heat pump based on the Peltier thermoelectric effect, and the thermoelectric cooling device is integrated with the heat source of the semiconductor device to be tested.

4. The dynamic thermal management method of semiconductor devices based on thermoelectric effect according to claim 3, characterized in that: The thermoelectric cooling device is a bulk thermoelectric module with a thickness of 100 μm to 10 mm or a micro thermoelectric cooling film with a thickness of 1 nm to 100 μm.

5. The dynamic thermal management method of semiconductor devices based on thermoelectric effect according to claim 1, characterized in that: The thermal model in step S4 includes at least one heat source and at least two thermal resistors.

6. The dynamic thermal management method of semiconductor devices based on thermoelectric effect according to claim 1, characterized in that: The heat source of the semiconductor device is a chip or a module.

7. The dynamic thermal management method of semiconductor devices based on thermoelectric effect according to claim 1, characterized in that: The optimal parameter of the semiconductor device to be monitored is an optimal clock frequency or an optimal operating voltage or an optimal number of operating cores of the semiconductor device to be tested.

8. A dynamic thermal management device for a semiconductor device based on thermoelectric effect, characterized in that: The device is used to implement the dynamic thermal management method of a semiconductor device based on the thermoelectric effect as described in any one of claims 1 to 7, and the device includes: a temperature sensor, a temperature readout circuit, a buffer, a thermal slope calculation circuit, a trigger detector, a parameter calculation circuit, a thermoelectric cooling device and a dynamic thermal management circuit, and the temperature sensor, temperature readout circuit, buffer, thermal slope calculation circuit, trigger detector, parameter calculation circuit, thermoelectric cooling device and dynamic thermal management circuit are connected in sequence.

9. The dynamic thermal management device of a semiconductor device based on thermoelectric effect according to claim 8, characterized in that: The parameter calculation circuit takes a fixed slope threshold as a target, uses a target optimization algorithm to perform optimal calculation on the thermal model, and calculates and obtains the optimal operating current or voltage of the thermoelectric cooling device and the optimal parameters of the semiconductor device to be monitored.

10. The dynamic thermal management device of a semiconductor device based on thermoelectric effect according to claim 9, characterized in that: The dynamic thermal management circuit calls the thermoelectric cooling device to start dynamic thermal management of the heat source of the monitored semiconductor device based on the optimal operating current or voltage of the thermoelectric cooling device calculated by the parameter calculation circuit, and maintains the original power of the monitored semiconductor device or increases the original power of the device based on the optimal power budget.

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