A method for synchronous junction temperature testing of semiconductor devices

Abstract

The present invention provides a method for synchronous junction temperature testing of semiconductor devices, which comprises obtaining a preliminary temperature coefficient and preliminary temperature compensation of each product in the same batch of semiconductor devices at different temperatures; calibrating the preliminary temperature coefficient using an average value method to obtain an average temperature coefficient and an average temperature compensation, and obtaining optimal product parameters for representing the temperature performance of products of the same model and the same batch; testing the optimal product parameters of semiconductor devices in multiple batches in a semiconductor testing system, and testing the voltage compensation of theoretical voltage and actual voltage at the same temperature; based on the semiconductor testing system, inputting the average temperature coefficient, the average temperature compensation and the voltage compensation to obtain the real-time junction temperature of the chip; the present invention calibrates the influencing factors of the semiconductor device from multiple angles, and thus can realize the tracking and measurement of the real-time chip temperature at any temperature.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor device testing, and in particular relates to a method for synchronous junction temperature testing of semiconductor devices. Background Art

[0002] The heat generated by semiconductor products themselves and the ambient temperature of use will have an adverse effect on parameter drift, performance stability, and reliability of use. This impact will affect the reliable use of the entire integrated circuit and even the system.

[0003] For power devices, the impact of temperature on product performance is extremely obvious. Real-time measurement of the junction temperature inside the device is crucial for device or system parameter evaluation and debugging. Existing data show that "Methods for real-time measurement of junction temperature in transistor steady-state operating life test" and "Research on steady-state operating life test methods with controllable junction temperature" are all based on junction temperature measurement and control in steady-state operating life tests. They are unable to accurately obtain the actual chip temperature of the device during testing at high temperature, normal temperature, low temperature and variable quantity tests. Summary of the invention

[0004] In view of the problems existing in the prior art, the present invention provides a method for synchronous junction temperature testing of semiconductor devices, which solves the problem that the actual chip temperature of the device during testing cannot be accurately obtained when the existing semiconductor devices are tested at high temperature, normal temperature, low temperature and variable amount.

[0005] The present invention is achieved through the following technical solutions:

[0006] A method for synchronous junction temperature testing of a semiconductor device comprises the following steps:

[0007] S1: Build a circuit to obtain the preliminary temperature coefficient and preliminary temperature compensation of each product in the same batch of semiconductor devices at different temperatures;

[0008] S2: Use the average method to calibrate the average temperature coefficient and average temperature compensation of multiple batches of semiconductor devices to obtain the optimal product parameters to represent the temperature performance of products of the same model and batch;

[0009] S3: Testing the optimal product parameters of multiple batches of semiconductor devices in the semiconductor test system, and testing the voltage compensation of theoretical voltage and actual voltage at the same temperature;

[0010] S4: Based on the semiconductor test system, the average temperature coefficient, average temperature compensation and voltage compensation are input to obtain the real-time junction temperature of the chip.

[0011] Further, the obtaining of the preliminary temperature coefficient and the preliminary temperature compensation comprises the following steps:

[0012] The semiconductor device is placed in clear oil, a current that does not cause the semiconductor device to heat up is selected to connect the semiconductor device, the temperature is raised to a preset temperature and then the temperature is lowered, and the junction voltage of the semiconductor device at various temperatures during the cooling process is recorded until the clear oil temperature is consistent with the room temperature, and a curve model of the junction voltage and temperature is obtained;

[0013] The curve model is fitted into a linear model using the least square method to obtain the preliminary temperature coefficient and preliminary temperature compensation of the semiconductor devices in the same batch.

[0014] Furthermore, the heating temperature range is 25°C-90°C.

[0015] Furthermore, the preliminary temperature coefficient is the slope of the linear model:

[0016]

[0017] Among them, Tj 1 is the junction temperature of the semiconductor device at the current temperature, Tj 2 is the junction temperature of the semiconductor device at the next temperature, V TSPJ2 is the semiconductor device voltage at the current temperature, V TSPJ1 The voltage of the semiconductor device at the next temperature.

[0018] Further, the average temperature coefficient is:

[0019] K 平 =(K 1 +K 2 +K 3 +……+K n ) / n;

[0020] Among them, K 平 is the average temperature coefficient, K 1 , K 2 , K 3 、……+K n is the temperature coefficient of multiple semiconductor devices from the same batch at the same temperature, and n is the number of semiconductors from the same batch.

[0021] Furthermore, the average temperature compensation package is:

[0022] B 平 =(B 1 +B 2 +B 3 +……+B n ) / n;

[0023] Among them, B 平 is the average temperature compensation, B 1 , B 2 , B 3 , ... + Bn Temperature compensation for multiple semiconductor devices from the same batch at the same temperature, where n is the number of semiconductors from the same batch.

[0024] Further, the voltage compensation is:

[0025] V 补 =V j -V 测 ;

[0026] Among them, V 补 is the voltage compensation, V j is the theoretical voltage of the semiconductor device at the current temperature, V 测 It is the actual voltage of the semiconductor device at the current temperature.

[0027] Furthermore, in step S4, the junction temperature of the semiconductor device needs to be calculated based on ADD and MULT in the semiconductor test system:

[0028] Tj=Kx 平 (V 测 +V 补 )+Bx 平 ;

[0029] Among them, Tj is the real-time chip junction temperature, Kx 平 Bx is the average temperature coefficient of semiconductor devices at the current temperature. 平 is the average temperature compensation of the semiconductor device at the current temperature, V 补 is the voltage compensation of the semiconductor device at the current temperature, V 测 is the junction voltage measured in real time.

[0030] Compared with the prior art, the present invention has the following beneficial technical effects:

[0031] The present invention provides a method for synchronous junction temperature testing of semiconductor devices. The method comprises the following steps: building a circuit to obtain a preliminary temperature coefficient and preliminary temperature compensation of each product in the same batch of semiconductor devices at different temperatures; using an average value method to calibrate the preliminary temperature coefficient to obtain an average temperature coefficient and an average temperature compensation, and obtaining optimal product parameters to represent the temperature performance of products of the same model and the same batch; testing the optimal product parameters of multiple batches of semiconductor devices in a semiconductor testing system, and testing the voltage compensation of theoretical voltage and actual voltage at the same temperature; based on the semiconductor testing system, inputting the average temperature coefficient, the average temperature compensation and the voltage compensation to obtain the real-time junction temperature of the chip; the present invention tests different batches of the same chip respectively to obtain preliminary temperature coefficients and preliminary temperature compensation, using the average value method to obtain the optimal product parameters of multiple batches, and then obtaining the voltage compensation of the semiconductor testing system, calibrating the influencing factors of the semiconductor device from multiple angles, and then being able to track and measure the real-time chip temperature at any temperature. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 A flow chart of a method for synchronous junction temperature testing of a semiconductor device according to the present invention;

[0033] Figure 2 The least squares fitting curve model of the present invention is a schematic diagram of a linear model;

[0034] Figure 3 This is a schematic diagram of the Kelvin wiring detection circuit of the present invention. DETAILED DESCRIPTION

[0035] The present invention is further described in detail below in conjunction with specific embodiments, which are intended to explain the present invention rather than to limit it.

[0036] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0037] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0038] The present invention provides a method for synchronous junction temperature testing of a semiconductor device, such as Figure 1 As shown, the following steps are included:

[0039] S1: Build a circuit to obtain the preliminary temperature coefficient and preliminary temperature compensation of each product in the same batch of semiconductor devices at different temperatures;

[0040] S2: Use the average method to calibrate the average temperature coefficient and average temperature compensation of multiple batches of semiconductor devices to obtain the optimal product parameters to represent the temperature performance of products of the same model and batch;

[0041] S3: Testing the optimal product parameters of multiple batches of semiconductor devices in the semiconductor test system, and testing the voltage compensation of theoretical voltage and actual voltage at the same temperature;

[0042] S4: Based on the semiconductor test system, the average temperature coefficient, average temperature compensation and voltage compensation are input to obtain the real-time junction temperature of the chip.

[0043] Preferably, the obtaining of the preliminary temperature coefficient and the preliminary temperature compensation comprises the following steps:

[0044] The semiconductor device is placed in clear oil, a current that does not cause the semiconductor device to heat up is selected to connect the semiconductor device, the temperature is raised to a preset temperature and then the temperature is lowered, and the junction voltage of the semiconductor device at various temperatures during the cooling process is recorded until the clear oil temperature is consistent with the room temperature, and a curve model of the junction voltage and temperature is obtained;

[0045] The curve model is fitted into a linear model using the least square method to obtain the preliminary temperature coefficient and preliminary temperature compensation of the semiconductor devices in the same batch.

[0046] Furthermore, the heating temperature range is 25°C-90°C.

[0047] Furthermore, it is characterized in that the preliminary temperature coefficient is the slope of the linear model:

[0048]

[0049] Among them, Tj 1 is the junction temperature of the semiconductor device at the current temperature, Tj 2 is the junction temperature of the semiconductor device at the next temperature, V TSPJ2 is the voltage of the semiconductor device at the current temperature, V TSPJ1 The voltage of the semiconductor device at the next temperature.

[0050] Specifically, placing the semiconductor device in clear oil can improve the performance of heat transfer and increase the uniformity of temperature; by collecting the junction voltage of the semiconductor device during the cooling process, this is because the clear oil wraps the semiconductor device and the cooling speed of the clear oil is slower than that of the semiconductor device, so the temperature of the semiconductor device can be accurately collected.

[0051] Specifically, the least squares fitting curve model is a linear model, such as Figure 2 As shown, the voltage and junction temperature model is:

[0052] y = ax + b;

[0053] a is the product temperature coefficient, b is the intercept, and y is the junction temperature;

[0054] That is: T J =K*VJ +b.

[0055] Preferably, obtaining the average temperature coefficient comprises the following steps:

[0056] K 平 =(K 1 +K 2 +K 3 +……+K n ) / n;

[0057] Among them, K 平 is the average temperature coefficient, K 1 , K 2 , K 3 、……+K n is the temperature coefficient of multiple semiconductor devices from the same batch at the same temperature, and n is the number of semiconductors from the same batch.

[0058] Further, obtaining the average b comprises the following steps:

[0059] B 平 =(B 1 +B 2 +B 3 +……+B n ) / n;

[0060] Among them, B 平 is the average temperature compensation, B 1 , B 2 , B 3 , ... + B n Temperature compensation for multiple semiconductor devices from the same batch at the same temperature, where n is the number of semiconductors from the same batch.

[0061] Preferably, the voltage compensation is:

[0062] V 补 =V j -V 测 ;

[0063] Among them, V 补 is the voltage compensation, V j is the theoretical voltage of the semiconductor device at the current temperature, V 测 It is the actual voltage of the semiconductor device at the current temperature.

[0064] Preferably, in step S4, the junction temperature of the semiconductor device needs to be calculated based on ADD and MULT in the semiconductor test system:

[0065] Tj=Kx 平 (V 测 +V 补 )+Bx 平 ;

[0066] Among them, Tj is the real-time chip junction temperature, Kx 平 Bx is the average temperature coefficient of semiconductor devices at the current temperature. 平 is the average temperature compensation of the semiconductor device at the current temperature, V 补 is the voltage compensation of the semiconductor device at the current temperature, V BE The junction voltage is measured in real time.

[0067] Specifically, the ADD and MULT are used to calculate the junction temperature of the semiconductor device. Specifically, the test program is edited using the logical ADD&MULTI operation according to the temperature sensitive parameters and the chip junction temperature relationship. The language meaning is as follows:

[0068] Table 1, Language meaning table

[0069] Project Name Project Title Project meaning ADD addition Value1+Value2 MULTI multiplication Value1×Value2

[0070] The present invention provides a preferred embodiment:

[0071] Taking transistor 3DD4B TO-257 model as a sample, the following steps are included:

[0072] Build a circuit, place the semiconductor device in clear oil, select a current that does not cause the semiconductor device to heat up to connect the semiconductor device, heat it to a preset temperature and then start cooling it down, record the junction voltage of the semiconductor device at various temperatures during the cooling process, until the clear oil temperature is consistent with the room temperature, and obtain a curve model of the junction voltage and temperature;

[0073] The curve model is fitted into a linear model using the least square method to obtain the preliminary temperature coefficient and preliminary temperature compensation of the semiconductor devices in the same batch.

[0074] Supplementary data table: that is, the temperature is: experimental values ​​between 25℃-90℃, and the temperature selection values ​​must include 25, 53, and 90℃.

[0075] Temperature(℃) Temperature coefficient (℃ / W) Initial temperature compensation (℃) 25 -505.5 344.9 53 -507.5 346 90 -526.5 365.3

[0076] S2: Use the average method to calibrate the average temperature coefficient and average temperature compensation of multiple batches of semiconductor devices to obtain the optimal product parameters to represent the temperature performance of products of the same model and batch;

[0077] Calculation process with numerical values

[0078] K=-(516.1+512.5+509.7+507.8+507.2+507+506.4+505.7+505.5) / 9=508.656

[0079] T 补=(350.4+348.5+347.0+346.1+345.8+345.6+345.3+345+344.9) / 9=346.511S3: Testing the optimal product parameters of multiple batches of semiconductor devices in the semiconductor test system, and testing the voltage compensation of the theoretical voltage and the actual voltage at the same temperature;

[0080] Calculation process with numerical values

[0081]

[0082]

[0083] S4: Based on the semiconductor test system, the average temperature coefficient, average temperature compensation and voltage compensation are input to obtain the real-time junction temperature of the chip. In order to reduce the system error, Kelvin wiring is used for testing, and qualified products from the same batch are taken and kept at 25°C in the laboratory for 30 minutes to test their static parameters and obtain Tj of each product.

[0084] Kelvin wiring detection, which is an electrical impedance measurement technique that uses separate electrodes for carrying current and voltage, allows for more accurate measurements than traditional two terminal sensors. Test wiring methods, such as Figure 3 As shown; after the test is completed, the indoor ambient temperature is compared, and the actual ambient temperature is basically consistent with the calculated chip temperature, verifying that the chip temperature at this normal temperature is normal temperature; thus, the chip temperature under high and low ambient temperatures can be obtained in real time.

[0085] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for synchronous junction temperature testing of semiconductor devices, It is characterized in that The following steps are involved: S1: Build a circuit to obtain the preliminary temperature coefficient and preliminary temperature compensation of each product in the same batch of semiconductor devices at different temperatures; S2: Use the average method to calibrate the average temperature coefficient and average temperature compensation of multiple batches of semiconductor devices to obtain the optimal product parameters to represent the temperature performance of products of the same model and batch; S3: Testing the optimal product parameters of multiple batches of semiconductor devices in the semiconductor test system, and testing the voltage compensation of theoretical voltage and actual voltage at the same temperature; S4: Based on the semiconductor test system, the average temperature coefficient, average temperature compensation and voltage compensation are input to obtain the real-time junction temperature of the chip.

2. A method for synchronous junction temperature testing of a semiconductor device according to claim 1, It is characterized in that The obtaining of the preliminary temperature coefficient and the preliminary temperature compensation comprises the following steps: The semiconductor device is placed in clear oil, a current that does not cause the semiconductor device to heat up is selected to connect the semiconductor device, the temperature is raised to a preset temperature and then the temperature is lowered, and the junction voltage of the semiconductor device at various temperatures during the cooling process is recorded until the clear oil temperature is consistent with the room temperature, and a curve model of the junction voltage and temperature is obtained; The curve model is fitted into a linear model using the least square method to obtain the preliminary temperature coefficient and preliminary temperature compensation of the semiconductor devices in the same batch.

3. A method for synchronous junction temperature testing of a semiconductor device according to claim 2, It is characterized in that The heating temperature range is 25°C-90°C.

4. A method for synchronous junction temperature testing of a semiconductor device according to claim 2, It is characterized in that The preliminary temperature coefficient is the slope of the linear model: Among them, T J1 is the junction temperature of the semiconductor device at the current temperature, T J2 is the junction temperature of the semiconductor device at the next temperature, V TSPJ2 is the voltage of the semiconductor device at the current temperature, V TSPJ1 The voltage of the semiconductor device at the next temperature.

5. A method for synchronous junction temperature testing of a semiconductor device according to claim 1, It is characterized in that The average temperature coefficient is: K 平 =(K 1 +K 2 +K 3 +……+K n ) / n; Among them, K 平 is the average temperature coefficient, K 1 , K 2 , K 3 , ... K n is the temperature coefficient of multiple semiconductor devices from the same batch at the same temperature, and n is the number of semiconductors from the same batch.

6. A method for synchronous junction temperature testing of a semiconductor device according to claim 1, It is characterized in that The average temperature compensation package is: B 平 =(B 1 +B 2 +B 3 +……+B n ) / n; Among them, B 平 is the average temperature compensation, B 1 , B 2 , B 3 , ... B n Temperature compensation for multiple semiconductor devices from the same batch at the same temperature, where n is the number of semiconductors from the same batch.

7. A method for synchronous junction temperature testing of a semiconductor device according to claim 1, It is characterized in that The voltage compensation is: V 补 =V j -V 测 ; Among them, V 补 is the voltage compensation, V j is the theoretical voltage of the semiconductor device at the current temperature, V 测 It is the actual voltage of the semiconductor device at the current temperature.

8. A method for synchronous junction temperature testing of a semiconductor device according to claim 1, It is characterized in that In step S4, the junction temperature of the semiconductor device needs to be calculated based on ADD and MULT in the semiconductor test system: Tj=Kx 平 (V 测 +V 补 )+Bx 平 ; Among them, Tj is the real-time chip junction temperature, Kx 平 Bx is the average temperature coefficient of semiconductor devices at the current temperature. 平 is the average temperature compensation of the semiconductor device at the current temperature, V 补 is the voltage compensation of the semiconductor device at the current temperature, V 测 is the junction voltage measured in real time.

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