A full-wavelength spectrum sensor, material analysis system and method

Abstract

The present invention discloses a full-wavelength range spectral sensor, a system and a method for material analysis. The components of the sensor solution include: a structure on a gold-plated ceramic substrate, a series of metal oxide emitters in the ultraviolet wavelength region, a series of organic emitters in the visible light wavelength region, a series of organic emitters in the near-infrared wavelength region, complementary metal oxide semiconductor (CMOS) UV-Vis detection, an indium gallium arsenide (InGaAs) window (950-1700nm) for NIR detection, and a microcircuit for controlling time-series luminescence / detection with Fourier transform filtering to eliminate environmental noise and isolate signals. The highly compact integrated sensor can provide fast, stable and repeatable spectral array data covering the entire wavelength range of approximately 200 to 1700nm.

Description

Technical Field

[0001] The present invention relates to the field of sensors, and in particular to a full-wavelength range spectral sensor, a system and a method for material analysis. Background Art

[0002] Spectroscopy is widely used in academic research, medical practice, and industrial settings to analyze the chemical composition and properties of substances. By capturing the interaction patterns between various substances and light of varying energies (wavelengths), spectral responses, or chemical fingerprints, can be analyzed non-invasively and in real time. A wide variety of spectral analysis techniques exist, differing primarily in wavelength coverage and optical design, but few solutions are available for consumer spectroscopy applications. A major limitation for consumer applications is the lack of reliable, miniaturized, and cost-effective spectral analysis solutions, particularly in the form of compact sensors. In recent years, advancements in chipset technology have led to the development of a growing number of miniaturized and low-cost spectral sensors. However, most solutions are based on silicon-based semiconductor microelectromechanical systems (MEMS) technology. Silicon's properties limit its response to photons in the UV-Vis-swNIR region (200-1000nm), thus limiting its dynamic sensitivity. Array sensor solutions using GaAs and InP in the infrared region have also been reported, but their cost is relatively high for consumer applications. Generally speaking, achieving reliable spectral analysis results requires the widest possible wavelength coverage and minimal noise reduction. In particular, three major issues need to be addressed before a complete solution can be made available to consumers: 1. A highly compact integrated chipset that allows for broad wavelength coverage, thereby providing effective spectral response in the UV-Vis-IR region; 2. A miniature built-in control system that enables a small sensor size suitable for consumer electronic device applications; and 3. A robust signal generation / processing mechanism that provides a reliable, stable spectral signal, eliminates ambient noise, and allows the spectral signal to be detected from the modulated emitter.

[0003] A spectrometer or spectral sensor generates light of varying energies (wavelengths), interacts with a substance of interest, and detects the resulting response to the varying light (i.e., energy) response, generating a series of spectral data. The spectra of different substances can be visualized, compared, or processed and analyzed using algorithms to obtain analytical results tailored to individual needs. A traditional spectrometer consists of three main components: a light source, a spectroscopic unit, and a detector. These three units are assembled within a precisely positioned optical geometry. This optical geometry is often complex and occupies a large volume. The use of various complex optical components contributes to the large size and high cost of traditional spectrometers. Numerous innovations have been made to reduce the size and cost of spectral sensors. MEMS technology has been applied to reduce the size of optical geometries, but the silicon-based substrate limits its sensitive wavelength range to below 1000 nm. Quantum dots and nanorod / wire materials have been used to modify silicon-based photonic arrays, replacing traditional spectroscopic units (gratings or interference filters). However, the development of microsensor chipsets remains limited by the wavelength coverage of silicon (300-1000 nm). InGaAs photonic converters have been integrated with MEMS technology to provide mid- and near-infrared coverage, but the use of gratings and optical layouts still makes the solution costly. A promising approach is to use specially designed luminescent materials (i.e., emitters that produce a limited energy range) to provide light differentiation, which can also reduce the trouble of complex optical layouts. Due to the limitations of available materials, this approach is generally limited to a few wavelength channels and a narrow wavelength coverage range.

[0004] Organic light-emitting diodes (commonly referred to as OLEDs) utilize organic light-emitting materials to generate emitted light from an organic light-emitting layer (EML) when power is applied to both sides. It is commonly used to manufacture displays, providing low energy consumption and reliable color reproduction. The advantages of OLED materials are stable emission spectra, narrow bandwidth, and low energy consumption, making them ideal materials for miniature spectral sensors. More importantly, the properties of organic molecular structures can be easily modified by adding or removing chemical groups, so that the emission spectrum can be fine-tuned to meet requirements. For example, adding more aromatic rings to the structure usually causes the emission to red-shift (to longer wavelengths), making tunable emission and better photosensitivity resolution possible.

[0005] This technology addresses existing challenges by providing multiple stable light sources and delivering accurate spectral sensing results by reducing ambient noise. Compared to traditional mercury / halogen light sources, electrically pulse-modulated LEDs and OLEDs offer improved emission uniformity and reproducibility. Importantly, digitally modulated light sources can be programmed to different frequency domains, remove ambient noise through Fourier transform signal filtering, and allow for simultaneous data acquisition from multiple light sources. Reconstruction algorithms reconstruct the signal acquired from digitally modulated light into the full spectrum, paving the way for a variety of applications. Summary of the Invention

[0006] The technical problem to be solved by the present invention is a full-wavelength spectral sensor, a system and a method for material analysis. The sensor covers both the UV-Vis-swNIR region for silicon detection (200-1000nm) and the swNIR mid-near infrared region for InGaAs detection (900-1700nm). Its digitally modulated emission allows for rapid removal of environmental noise. The present invention can be widely used in various daily scenarios, providing convenience and benefits to the lives of end users.

[0007] The present invention is achieved through the following technical solutions: a full-wavelength range spectral sensor, comprising a gold-plated insulating substrate supporting four functional areas, which include a first functional area, a second functional area, a third functional area, and a fourth functional area, wherein the first functional area includes a plurality of ultraviolet emitters, and the emission wavelength range is approximately 200nm-400nm; the second functional area includes a plurality of visible emitters, and the emission wavelength range is approximately 400nm-800nm; the third functional area includes a plurality of near-infrared emitters, and the emission wavelength range is approximately 800nm-1700nm; the fourth functional area includes a first detection window and a second detection window, wherein the first detection window includes one or more CMOS detectors for detecting wavelengths in the range of approximately 200-950nm, and the second detection window includes one or more InGaAs detectors for detecting wavelengths in the range of approximately 950-1700nm;

[0008] a barrier having a wavelength range of about 200 nm to 1700 nm, defined by the first, second, and third functional regions, the barrier surrounding the fourth functional region;

[0009] UV-NIR transparent glass covering the first, second, third and fourth functional areas and an inner space filled with inert gas;

[0010] Also included is a microcircuit for controlling the light emission / detection.

[0011] As a preferred technical solution, the insulating substrate is a ceramic substrate, and the ceramic substrate is an aluminum nitride substrate.

[0012] As a preferred technical solution, the first functional area is arranged in the top area of ​​the substrate, the second functional area is arranged below the first functional area and on the left half of the substrate, and the third functional area is arranged in the bottom area of ​​the substrate, below the first functional area and on the right half of the substrate, wherein the light detection area is located in the center of the substrate.

[0013] As a preferred technical solution, each of the first functional area, the second functional area and the third functional area includes a plurality of compartments.

[0014] As a preferred technical solution, the first functional area includes 4 to 16 compartments, or no less than 4 compartments, and each compartment includes one or more of the multiple ultraviolet emitters.

[0015] As a preferred technical solution, the first functional area has eight separate compartments, and the ultraviolet emitter is used to support the metal oxide material with a large current during operation.

[0016] As a preferred technical solution, the multiple ultraviolet emitters include 8 emitters, and the emitters include emission centers of 250nm, 260nm, 270nm, 280nm, 365nm, 375nm, 383nm and 393nm, and each emission center is ±6nm.

[0017] As a preferred technical solution, the second functional area includes 8-20 compartments, or no less than 8 compartments, and each compartment includes one or more of the multiple visible emitters.

[0018] As a preferred technical solution, the visible light emitter uses organic light-emitting materials.

[0019] As a preferred technical solution, the second functional area has twelve compartments.

[0020] As a preferred technical solution, the multiple visible light emitters include sixteen emitters arranged in twelve compartments, eight of which are single-layer layouts of one of the multiple visible light emitters, and eight of which are double-layer layouts of two of the multiple visible emitters, and the visible emitters include emission centers of 450nm, 460nm, 515nm, 525nm, 560nm, 570nm, 602nm, 612nm, 625nm, 635nm, 662nm, 672nm, 695nm, 705nm, 798nm and 808nm, each ±6nm.

[0021] As a preferred technical solution, the third functional area includes 4 to 16 compartments, or no less than 10 compartments, each compartment includes one or more of the multiple NIR emitters, and the NIR emitters use organic light-emitting materials. The third functional area has ten compartments, each compartment includes one or more of the multiple NIR emitters.

[0022] As a preferred technical solution, the plurality of NIR emitters include twenty emitters arranged in the ten compartments, each compartment including two of the plurality of emitters, and the emitters include emission centers of 845nm, 855nm, 884nm, 894nm, 928nm, 938nm, 967nm, 977nm, 993nm, 1003nm, 1195nm, 1205nm, 1291nm, 1301nm, 1453nm, 1463nm, 1531nm, 1541nm, 1643nm and 1653nm, each ±6nm.

[0023] As a preferred technical solution, the fourth functional area has first and second CMOS detection windows and first and second InGaAs detection windows, wherein the first CMOS detection window and the first InGaAs detection window are associated with the signal channel and the second CMOS and the second InGaAs detection windows are associated with the reference channel.

[0024] As a preferred technical solution, the first, second and third functional zones are controlled by a dimming controller to provide a timed emission sequence, wherein the fourth functional zone is controlled by an analog front-end controller to pick up the correct signal in the time domain using the correct window, and then pass the signal to the main controller for further processing, and then transmit it to the Internet / cloud connected device / gadget via BLE or USB.

[0025] As a preferred technical solution, each of the plurality of ultraviolet emitters is independently selected from semiconductors, quantum dots, nanoparticles, nanorods and nanowires.

[0026] As a preferred technical solution, the microcircuit includes a main controller for performing Fourier transform filtering, digitally modulating each emitted light to have a specific frequency, wherein, after Fourier transformation, abnormal frequencies are removed from the environment, thereby removing noise from the output signal after inverse Fourier transformation.

[0027] As a preferred technical solution, the returned discrete spectral data array is fitted with Gaussian elements to obtain the final spectral output.

[0028] A system for performing material analysis of the present invention comprises a spectral sensor, a mobile device or computer connected via BLE or USB, and cloud-based artificial intelligence for spectral data analysis / interpretation, wherein the spectral sensor can operate at multiple wavelengths selected from 200 nm to 1700 nm.

[0029] A method for performing spectral analysis on a substance according to the present invention comprises the following specific steps: (a) obtaining a sensor chip comprising a plurality of LED emitters, two CMOS detectors, and two InGaAs detectors on its front surface;

[0030] (b) orienting the front surface of the sensor substantially toward the analyte;

[0031] (c) simultaneously modulating one or more LED emitters on the sensor chip at different frequencies; wherein the modulated LED emitters emit light in the wavelength range of 200-950 nm or 950-1700 nm;

[0032] (d) detecting the spectral response by a CMOS detector or an InGaAs detector;

[0033] (e) Separating the spectral response of each emitter by Fourier filtering;

[0034] (f) Spectra based on the separated spectral responses of each emitter were constructed by Gaussian peak fitting.

[0035] As a preferred technical solution, it also includes removing environmental noise through Fourier filtering.

[0036] As a preferred technical solution, steps (e) and / or (f) are performed on one or more of the sensor chip, a computer or phone connected to the sensor via USB or Bluetooth, or a cloud connected to the sensor via a computer or phone.

[0037] As a preferred technical solution, artificial intelligence is used in steps (e) and / or (f).

[0038] The beneficial effects of the present invention are as follows: in order to cover the full wavelength range from ultraviolet to mid-near infrared, ultraviolet light emitting metal oxide materials, visible light and near-infrared light emitting organic light-emitting materials, and two detection windows (CMOS for about 200-950nm, InGaAs for about 950-1700nm) are integrated on a gold-plated ceramic substrate, such as an aluminum nitride ceramic substrate. In one embodiment, a total of 44 different emitter materials are applied together, covering a range of about 200nm-1700nm and a spectral resolution of about 10-25nm. There is a UV-NIR transmitting cover glass on the top of the substrate and a control circuit on the back, which can digitally modulate the emission of light of different wavelengths in a time series through different light-emitting materials. The signal obtained by the detection window is processed by Fourier transform filtering to remove environmental noise, and then the full spectrum is reconstructed. This highly compact integrated sensor provides fast, stable and repeatable spectral array data covering the entire wavelength range from 200 to 1700 nm. The sensor can provide miniature, highly compact and wide wavelength range coverage for any spectral sensing purpose. Such a sensor can be advantageously applied in industrial environments and consumer electronics. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0040] Figure 1 , Representative schematics illustrating different luminescent materials and detection window layouts;

[0041] Figure 2-Figure 3 ,Typical sensor geometry with size, dimensions, and functional area layout from top and bottom views;

[0042] Figure 4 , a typical cross-section of a sensor with coating arrangements of different functional units;

[0043] Figure 5 , a representative coating arrangement of ultraviolet light emitting metal oxide materials;

[0044] Figure 6 , a representative coating arrangement of organic light emitting materials;

[0045] Figure 7 , shows the emission spectra of all 44 light-emitting units in intensity-wavelength order;

[0046] Figure 8, describes the control circuit function flow chart;

[0047] Figure 9 , explains the Fourier transform filtering process for removing ambient noise;

[0048] Figure 10 , shows a typical example of reconstructing full spectral data from a spectral sensor;

[0049] Figure 11 , a typical prototype spectral sensor photo is given. DETAILED DESCRIPTION

[0050] All features disclosed in this specification, or all steps in the disclosed methods or processes, except mutually exclusive features and / or steps, can be combined in any manner.

[0051] Any feature disclosed in this specification (including any appended claims, abstract and drawings), unless otherwise stated, may be replaced by other equivalent or similar features. That is, unless otherwise stated, each feature is only an example of a series of equivalent or similar features.

[0052] like Figure 1 、 Figure 4 and Figure 11 As shown, the present invention provides a full-wavelength spectrum sensor, a system and a method for material analysis. Figure 1 A representative schematic diagram of the layout of different light-emitting material windows and light detection windows is shown, all of which are coated on a gold-plated aluminum nitride ceramic substrate 101 having four different functional zones. In some embodiments, substrate 101 is any suitable insulator. In some embodiments, substrate 101 is a ceramic insulator. In some embodiments, substrate 101 is an aluminum nitride ceramic insulator. The first ultraviolet light emitting functional zone 107 includes eight different ultraviolet light emitting metal oxide materials that emit light centered between 250nm and 393nm. The second visible light emitting functional zone 108 includes 16 different organic light-emitting materials that emit light centered between 450nm and 808nm.

[0053] The third near-infrared light emitting functional area 109 comprises twenty different organic light-emitting materials, emitting light centered between 845nm and 1653nm. The final functional area in the center includes a CMOS detection window 105 and an InGaAs detection window 106; this final detection area is physically isolated from the first three illumination areas by a circular metal wall 104. In a nitrogen atmosphere, all functional areas are covered, sealed, and protected by UV-IR transparent glass 102, preventing damage from oxygen and humidity, thereby extending the luminescence duration and improving stability.

[0054] Figure 2 and Figure 3 The following are exemplary designs and architectures of a spectral sensor chipset, viewed from above and below. The exact dimensions of the sensor are 11mm x 11mm square, with the functional area space being a circle with a diameter of 1cm. The upper third of the chipset is the UV light-emitting functional area, with eight separate compartments for metal oxide material coatings to allow for high current generation during operation. The left half is the visible light-emitting functional area, with 12 metal compartments for organic light-emitting material coatings, including 12 single-layer coatings and 4 double-layer coatings, allowing a total of 16 emission wavelengths. Typically, single or double layers can be used to change emission characteristics. In some cases, a single layer of material A may have different emission characteristics, such as an emission wavelength center, than a double layer of material A. In some embodiments, a double layer of material may emit longer wavelengths than a single layer of material. In some cases, a single layer of material A or material B may have different emission characteristics, such as an emission wavelength center, than a double layer comprising layers A and B. Such tunability is generally understood by those skilled in the art. The right half houses the near-infrared (NIR) emitting diode (LED) module, with 10 metal compartments for the IR emitting diode (LED) coating. Each compartment has half a single layer and half a double layer, generating a total of 20 NIR emission wavelengths. The center houses the light detection module, with four metal compartments: the two on the left are CMOS windows for UV and visible light detection (200-950nm), and the two on the right are InGaAs windows for NIR detection (950-1700nm). The bottom of the chipset includes 30 metal pads for digital signal communication with the emitting diodes, and four metal pads for reading the detection signals. Clearly, the number of pads on the bottom of the chipset associated with the emitters can correspond to the total number of UV, visible, and IR emitting diode (LED) modules. Similarly, the number of pads on the bottom of the chipset associated with the detectors can correspond to the total number of detector modules. In general, any architecture that functionally connects the LEDs and detectors to the other electrical components of the sensor is contemplated.

[0055] In one embodiment, the UV emitting functional area may have about 4 to 16 functional compartments, or about 4 to 12 functional compartments, or about 6 to 10 functional compartments. In one embodiment, the UV emitting functional area may have about 4, or about 5, or about 6, or about 7, or about 8, or about 9, or about 10, or about 11, or about 12, or about 13, or about 14, or about 15, or about 16 functional compartments. In one embodiment, the UV emitting functional area has no less than 4 compartments.

[0056] In one embodiment, the visible light emitting functional area may have about 8 to 20 functional compartments, or about 8 to 16 functional compartments, or about 10 to 14 functional compartments. In one embodiment, the visible light emitting functional area may have about 6, or about 7, or about 8, or about 9, or about 10, or about 11, or about 12, or about 13, or about 14, or about 15, or about 16, or about 17, or about 18, or about 19, or about 20 functional compartments. In one embodiment, the visible light emitting functional area has no less than 8 compartments.

[0057] In one embodiment, near infrared emission (NIR emission) functional area can have about 10 to about 16 functional compartments, or about 10 to about 14 functional compartments, or about 10 to about 12 functional compartments. In one embodiment, near infrared emission (NIR emission) functional area can have about 10 or about 11 or about 12 or about 13 or about 14 or about 15 or about 16 functional compartments. In one embodiment, near infrared emission (NIR emission) functional area has no less than 10 compartments.

[0058] In one embodiment, the UV emitting functional area may have about 4 to about 16 functional areas, the visible light emitting functional area may have about 8 to about 20 functional areas, and the NIR emitting functional area may have about 10 to about 16 functional areas. The sensor may have at least two detectors, or may have four detectors.

[0059] In one embodiment, the UV emitting functional area may have about 4 to about 10 functional areas, the visible light emitting functional area may have about 8 to about 14 functional areas, and the NIR emitting functional area may have about 10 to about 12 functional areas. The sensor may have at least two detectors, or may have four detectors.

[0060] The layout of the emitting and detecting areas is specifically designed and optimized to maximize signal-to-noise ratios and minimize electrical noise. The optimized layout can be described as comprising multiple UV-emitting compartments, multiple visible-light-emitting compartments, and multiple infrared-emitting compartments, along with multiple detector compartments, typically two. In one embodiment, the multiple UV-emitting compartments, multiple visible-light-emitting compartments, and multiple infrared-emitting compartments are surrounded by a metal or opaque barrier, which in turn surrounds the multiple detectors.

[0061] In some embodiments, a sensor can be described by multiple functional zones, for example, four. In one embodiment, the sensor includes a first functional zone comprising multiple UV emitters emitting in the wavelength range of approximately 200-400 nm, a second functional zone comprising multiple visible emitters emitting in the wavelength range of approximately 400-800 nm, a third functional zone comprising multiple near-infrared (NIR) emitters emitting in the wavelength range of approximately 800-1700 nm, and a fourth functional zone comprising first and second detection windows, namely, CMOS and InGaAs. The term "functional zone" does not necessarily imply that these zones are completely separate from one another, with the exception of the fourth functional zone comprising the detectors, which is separated from the first three functional zones by an opaque or metallic wall. In some embodiments, the first three functional zones are clearly defined from one another. In other embodiments, compartments associated with certain functional zones may partially overlap into other functional zones. Typically, compartments with specific emitter types, such as UV, visible, or IR, are grouped to simplify and logically design, but embodiments with different emitter types in an ungrouped layout are functional and are contemplated within the scope of the functional zone definitions.

[0062] In some embodiments, the UV emitter (i.e., the first functional zone) generates a higher current than either the visible or near-infrared emitters (i.e., the second and third functional zones). The UV emitter may consume approximately 80-120 mA, or approximately 100 mA, and may be referred to as "high current." The visible and / or near-infrared emitters may generate approximately 10-30 mA, or approximately 20 mA, and may be referred to as "low current." Given that the precise current draw of each emitter may vary, the sensor can adequately power the necessary or desired emitters.

[0063] Figure 3 An exemplary coating geometry for a sensor chipset is illustrated from a cross-sectional view. The bottom layer is a conductive layer with isolation etching to allow selective conductivity to different regions and metal pads 301. Above the bottom layer is a ceramic layer that provides high electrical isolation 302 and thermal conductivity. Multiple holes and rings are etched into this ceramic layer to allow connections between the bottom bracket and the upper functional areas. Above this are four conductive regions 303-306: a UV-emitting metal oxide region 307, a light detection region 304 with CMOS 308 and InGaAs 309 responses, a visible light emitting region 310, and a near-infrared luminescent region 311.

[0064] As used herein, a "compartment" is a location on the sensor chip where an LED or electrical component can be placed and functionally connected to the sensor. Typically, a "compartment" can be a pad or via that allows the LED or component to be connected to the sensor's circuitry as needed. A "compartment" can be a flat pad or a raised or recessed feature with an opening or surface for depositing one or more layers of material. The term "compartment" is not intended to be limiting and contemplates any suitable configuration for depositing an LED or connecting to an electrical component.

[0065] Figure 5 Details of the layered structure of the UV-emitting metal oxide region are shown. There are p-electrodes 401-403 and an n-electrode 409, all attached to the sensor's metal carrier via a layer of conductive tin 404 for external protection. Emission energy is primarily determined by metal oxide layers 406-408, which are protected by a top cover protective layer 405. In the depicted embodiment, layer 406 corresponds to a first metal oxide material layer, layer 407 corresponds to an intermediate layer comprising a mixture of first and second metal oxide materials, and layer 408 corresponds to a second metal oxide material layer. In one embodiment, there is a single metal oxide layer. In another embodiment, there are two or more metal oxide layers, optionally comprising a mixture of metal oxide materials. In another embodiment, there are 1-5 metal oxide layers. Each of the multiple UV emitter carriers can independently comprise a different number of metal oxide layers, any suitable metal oxide emitter. Alternatively, as will be appreciated by those skilled in the art, non-metal oxide UV emitters can be used.

[0066] Details of the layered structure of the visible and near-infrared organic light-emitting regions are shown in Figure 2. Figure 6 As shown in Figure 5, the top layer is a transparent conductive anode 501, and the bottom layer is a metallic conductive cathode 507. Between them are n-type layers 502, 503 and p-type layers 505, 506, separated by a layer of organic light-emitting material 504. The type and chemical structure of the molecules used in these layers determine the emission energy / wavelength of the coating window, resulting in a range of different emission windows from the visible to the mid- and near-infrared (400-1700 nm).

[0067] An exemplary full spectrum of all luminescent functional regions is as follows Figure 7As shown. There are 44 emission peaks with central wavelengths ranging from 250nm to 1653nm. Since each peak has a width of 100nm to 200nm, they cover the entire wavelength range of 200 to 1700nm. It will be understood that according to the sensor architecture disclosed herein, any suitable emitter can be used to achieve coverage of the 200 to 1700nm spectral range. Those skilled in the art will also understand that the emission characteristics can be adjusted by controlling various manufacturing aspects including layer thickness, overall emitter size and other factors.

[0068] Any emitter that emits light in the range of 200 nm to 1700 nm is contemplated for use in the present invention. With respect to UV emitters, using metal oxides as an example, binary, ternary, quaternary, doped including metal doping, sulfur doping, nitrogen doping or any other dopant, defect induced including metal and / or oxygen vacancies, composite materials, and any other metal oxides are contemplated. Other semiconductors with appropriate emission characteristics may be substituted for one or more metal oxides. The emitter may exist as one or more polymorphs and / or may be amorphous. Various semiconductor materials and their emission characteristics are generally determined by their approximate band gaps and are known. Some non-limiting examples of various UV emitters contemplated for use include CuO, GaN, AlN, AlGaN, InAlGaN, GeN, InGeN, Cr2O3, Fe2O3, ZnO, PbO, Bi2O3, TiO2, Cu2O, ZrO2, SnO2, WO3, SrTiO3, SiC, BaTiO3, B12As2, LiNbO3, and ZnS, including compositional variations and different oxidation states thereof. The UV emitters can be nanostructured nanoparticles, layers, quantum dots, nanowires, etc., or deposited using any known technique. One or more emitters can be mixed.

[0069] Visible and near-infrared emitters can be semiconductors, inorganic materials, or complexes such as metal chelates, organic complexes, polymers, or any known emitters. Complexes or chelates of Au, Pt, Pd, Ag, Cu, and Ni are non-limiting examples of suitable emitters. Oxygen or dioxygen complexes or chelates of W, Ru, and Ir are further non-limiting examples of suitable emitters. Coordination complexes of polycyclic aromatics and heteroatom-substituted polycyclic aromatics are also contemplated, wherein the heteroatom is typically N or O, and in some cases S. For example, coordination complexes of naphthalene, anthracene, phenanthrene, pyrene, benzopyrene, and other polycyclic aromatic compounds are contemplated, each of which is optionally substituted with one or more heteroatoms, including mixed ligand complexes. Polycyclic aromatics and heteroatom-substituted polycyclic aromatic complexes can have 1 to about 10 fused rings and can be substituted at any position with one or more substituents, such as alkyl, nitro, halogen, chlorine, bromine, fluorine, trifluoromethyl, difluoromethyl, amine, hydroxyl, and aryl, including substituted aryl. Any useful visible and near-infrared emitter is contemplated and is not limited to the specifically enumerated emitters, and any of the foregoing emitters in this paragraph are considered "organic emitters." The visible and near-infrared emitters may alternatively be thin layers, quantum dots, nanowires, or nanoparticles of inorganic materials such as AlN, AlGaN, InAlGaN, PbS, PbO, CdS, CdO, CuO, CdSe, or CuInS2, or may be perovskites, two-dimensional materials, or other materials. Polymer emitters are contemplated, such as derivatives of poly(p-phenylene vinylene), polyfluorene, poly(naphthalene vinylene), and the like.

[0070] Those skilled in the art should be familiar with various known emitter materials and manufacturing methods, for example, in "The Fundamentals and Applications of Light-Emitting Diodes", Elsevier Science, August 15, 2020, pages 1-284 ISBN012819605X, 9780128196052; "Organic Light-Emitting Diodes (OLEDs)", Electronic and Optical Materials, Woodhead Publishing Series, 2013, pages 1-647 ISBN978-0-85709-425-4); "Nitride Semiconductor Light-Emitting Diodes (LEDs) - Materials, Technologies, and Applications", 2nd Edition, Woodhead Publishing, October 24, 2017, pages 1-822 (ISBN9780081019436); and Schubert, F. "Light-Emitting Diodes (OLEDs)". Diodes”, 3rd edition, February 3, 2018, publisher: E. Fred Schubert, sections 1–39 (ISBN 978-0-9 863826-6-6) and elsewhere.

[0071] Figure 8 This is a circuit control flow chart. The lighting function area is controlled by the dimming controller to provide a time-series emission sequence, and the detection function area is controlled by the analog front-end (AFE) controller to pick up the correct signal in the time domain. The signal is then passed to the main controller for further processing before being transmitted to the Internet / cloud-connected device via BLE or USB. The main processing of the main controller is Fourier transform filtering, such as Figure 8 Each emitted light is digitally modulated at a specific frequency to avoid frequencies commonly found in household and industrial lighting. For example, signals with frequencies such as 10-40 Hz and 70-90 Hz can be filtered out from possible ambient noise at 50, 60, 100, and 120 Hz. It is understood that any useful modulation frequency can avoid ambient noise.

[0072] While one aspect of modulating the emitter output is to eliminate noise, another aspect is the ability to use multiple emitters simultaneously by modulating them at different frequencies. In one embodiment, one to five emitters can be active simultaneously and operate on different frequency modulation channels, which can be separated by Fourier filtering. The maximum number of emitters that can be active simultaneously generally depends on the detector's saturation level and may vary depending on the specific detector, LED output, geometry, and so on.

[0073] After the Fourier transform, the abnormal frequencies in the environment are removed, thereby removing the noise in the output signal after the inverse Fourier transform. The returned discrete spectral data array is then fitted with Gaussian elements to produce the final spectral output, one type of which is shown in Figure 10 middle.

[0074] In one or more embodiments, these sensor systems include three physically separated, luminescent regions on a gold-coated aluminum nitride ceramic substrate, corresponding to a high-current UV luminescent region, a visible light luminescent region, and a near-infrared luminescent region. The luminescent region surrounds or encloses multiple detectors, and in some embodiments, has a roughly circular shape with varying packaging / coating structures, with a detection region containing detectors located in the center. The detection region consists of two main components: a signal channel CMOS and a reference channel CMOS, covering detection of light from 200-950 nm; and a signal channel InGaAs and a reference channel InGaAs, covering detection of light from 950-1700 nm. The detection region is separated from the luminescent region by a circular metal or opaque wall, i.e., one that is opaque to radiation in the 200-1700 nm range. The entire region is covered and protected by UV-NIR transparent glass, which is also filled with a pure inert gas, such as nitrogen, to exclude oxygen and moisture from the air, ensuring a longer service life and better stability / reproducibility. The different luminescent windows are individually controlled by digital modulation, and the frequency allows for simultaneous detection of multiple emitters. Ambient noise with abnormal frequencies can also be removed from the frequency domain by Fourier transform, and the resulting total spectral data is fitted with a series of Gaussian shapes to reconstruct a continuous full spectrum.

[0075] In an exemplary method of use, the sensor's emitters and detectors are aligned and positioned substantially toward an analyte, substance, or material, and the sensor is activated to collect spectral data. Activation can occur from one or more of a phone, computer, cloud, or any other device connected to the sensor via any suitable communication protocol, including, for example, USB or Bluetooth, particularly Bluetooth Low Energy (BLE). The sensor's main controller and dimming controller power the emitters according to a predetermined schedule. The detectors can operate continuously or can be powered by an analog front end (AFE) according to a lighting schedule so that the correct detector is powered when an emitter within its detection wavelength range emits light. The lighting schedule includes one or more LED emitters operating simultaneously at different modulation frequencies, so that signals from different emitters can be separated from each other and from ambient noise. Separation is performed in the main controller via Fourier filtering. Alternatively, filtering can be performed as post-processing in another device or in the cloud. The spectral data can then be processed by Gaussian fitting to generate spectral data.

[0076] Further analysis can be performed as needed in a device connected to the sensor or in the cloud, such as smoothing, peak fitting or identification, etc. Artificial intelligence (AI) such as machine learning or neural networks can be implemented to improve the generation of spectral data and / or analysis of spectral data.

[0077] The sensor of the present invention integrates an ultraviolet luminescent material (such as a metal oxide), a visible-near-infrared luminescent material (such as an organic compound or a complex), and a photoelectric conversion window responsive to the UV-VIS (CMOS) and NIR regions (InGaAs) onto a specially designed semiconductor chip with microcontroller circuitry. The sensor comprises four main components: 1. A gold-plated aluminum nitride ceramic substrate frame; 2. Emitters: a series of ultraviolet wavelength luminescent regions (200-400 nm), a series of organic luminescent material-coated visible wavelength luminescent regions (400-800 nm), and a series of organic luminescent material-coated near-infrared wavelength luminescent regions (800-1700 nm); 3. Detectors: a complementary metal oxide semiconductor (CMOS) window for detecting photons in the UV-Vis region (200-950 nm) and an indium gallium arsenide (InGaAs) window for detecting photons in the NIR region (950-1700 nm); and 4. A microcircuit for controlling the emission / detection of light with sequential Fourier transform filtering to remove ambient noise and separate the signal from the modulated emitter. This highly compact integrated sensor provides fast, stable and repeatable spectral array data covering the entire wavelength range from 200 to 1700 nm. The sensor provides a miniature, highly compact and wide wavelength range coverage for any spectral sensing application scenario.

[0078] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions that are not conceived through creative work should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection defined in the claims.

Claims

1. A full-wavelength spectrum sensor, comprising a gold-plated insulating substrate supporting four functional areas, including a first functional area, a second functional area, a third functional area, and a fourth functional area, wherein: The first functional area includes a plurality of ultraviolet light emitters with an emission wavelength range of 200nm-400nm; the second functional area includes a plurality of visible light emitters with an emission wavelength range of 400nm-800nm; the third functional area includes a plurality of near-infrared emitters with an emission wavelength range of 800nm-1700nm; the fourth functional area includes a first detection window and a second detection window, wherein the first detection window includes one or more CMOS detectors for detecting wavelengths in the range of 200nm-950nm, and the second detection window includes one or more InGaAs detectors for detecting wavelengths in the range of 950nm-1700nm; a barrier wall with a wavelength range of 200 nm to 1700 nm, defined by the first, second and third functional areas, the barrier wall surrounding the fourth functional area; UV-NIR transparent glass covering the first, second, third and fourth functional areas and an inner space filled with inert gas; Also included are microcircuits for controlling light emission / detection; The insulating substrate is an aluminum nitride substrate; The first functional area is arranged in the top area of ​​the substrate, the second functional area is arranged below the first functional area and on the left half of the substrate, the third functional area is arranged in the bottom area of ​​the substrate, below the first functional area and on the right half of the substrate, and the fourth functional area is located in the center of the substrate and is adjacent to the first functional area in a horizontal plane; Each of the first functional area, the second functional area, and the third functional area includes a plurality of compartments; The first functional area has eight separate compartments, each compartment includes eight ultraviolet light emitters, the emitters include emission centers of 250nm, 260nm, 270nm, 280nm, 365nm, 375nm, 383nm and 393nm, and each emission center is ±6nm; The visible light emitter uses organic light-emitting materials; The second functional area has twelve compartments; the plurality of visible light emitters comprising sixteen emitters arranged in twelve compartments, wherein eight of the plurality of visible light emitters are arranged in a single layer and another eight of the plurality of visible light emitters are arranged in a double layer, the visible light emitters comprising emission centers of 450 nm, 460 nm, 515 nm, 525 nm, 560 nm, 570 nm, 602 nm, 612 nm, 625 nm, 635 nm, 662 nm, 672 nm, 695 nm, 705 nm, 798 nm, and 808 nm, each ±6 nm; The third functional area has ten compartments, each compartment including one or more of a plurality of NIR emitters; the NIR emitters are made of organic light-emitting materials; The plurality of NIR emitters includes twenty emitters arranged in the ten compartments, each compartment including two of the plurality of emitters, the emitters including: 845nm, 855nm, 884nm, 894nm, 928nm, 938nm, 967nm, 977nm, 993nm, 1003nm, 1195nm, 1205nm, 1291nm, 1301nm, Emission centers at 1453 nm, 1463 nm, 1531 nm, 1541 nm, 1643 nm, and 1653 nm, each ±6 nm; The fourth functional area has first and second CMOS detection windows and first and second InGaAs detection windows, wherein the first CMOS detection window and the first InGaAs detection window are associated with a signal channel and the second CMOS and the second InGaAs detection windows are associated with a reference channel; The first, second and third functional zones are controlled by a dimming controller to provide a timing-sequential emission sequence, wherein the fourth functional zone is controlled by an analog front-end controller to pick up the correct signal in the time domain using the correct window, and then pass the signal to the main controller for further processing and then transmitted to the Internet / cloud connected device / gadget via BLE or USB; The microcircuit includes a main controller for performing Fourier transform filtering, digitally modulating each emitted light to have a specific frequency, wherein after Fourier transformation, abnormal frequencies are removed from the environment, thereby removing noise from the output signal after inverse Fourier transformation; Fit the returned discrete spectral data array with Gaussian elements to obtain the final spectral output; In order to cover the full wavelength range from ultraviolet to mid-near infrared, the above-mentioned sensor uses metal oxide materials for ultraviolet light emitters, organic light-emitting materials for visible light and near-infrared light emitters, and two sets of detection windows. One of the two sets of detection windows, namely CMOS, is used to detect wavelengths of 200nm-950nm, and the other set, namely InGaAs, is used to detect wavelengths of 950nm-1700nm. They are integrated on an aluminum nitride substrate. A total of 44 different emitter materials are used together, covering a range of 200nm-1700nm and a spectral resolution of 10-25nm. There is a UV-NIR transparent glass on the top and a control circuit on the back, which can digitally modulate the emission of light of different wavelengths in a time series through different luminescent materials; the signal acquired by the detection window is processed by Fourier transform filtering to remove environmental noise, and then the full spectrum is reconstructed; this highly compact integrated sensor can provide fast, stable and repeatable spectral array data, covering the entire wavelength range from 200 to 1700nm. The sensor can provide miniature, highly compact and wide wavelength range coverage for any spectral sensing purpose, which is advantageously suitable for industrial environments and consumer electronics.

2. A system for material analysis, based on the spectral sensor according to claim 1, characterized in that: A system comprising the spectral sensor of claim 1, a BLE or USB connected mobile device or computer, and cloud-based artificial intelligence for spectral data analysis / interpretation, wherein the spectral sensor operates at multiple wavelengths selected from 200 nm to 1700 nm.

3. A method for spectral analysis of a substance, based on the sensor of claim 1, comprising the following specific steps: (a) obtaining a sensor chip comprising a plurality of LED emitters, two CMOS detectors, and two InGaAs detectors on its front surface; (b) orienting the front surface of the sensor substantially toward the analyte; (c) Simultaneously modulating one or more LED emitters on the sensor chip at different frequencies; wherein the modulated LED emitter emits light in the wavelength range of 200-950nm or 950-1700nm; (d) detecting the spectral response by a CMOS detector or an InGaAs detector; (e) Separating the spectral response of each emitter by Fourier filtering; (f) Constructing spectra based on the separated spectral responses of each emitter by Gaussian peak fitting; It also includes removing environmental noise through Fourier filtering; wherein steps (e) and / or (f) are performed on one or more of the sensor chip, a computer or phone connected to the sensor via USB or Bluetooth, or a cloud connected via a computer or phone connected to the sensor; Wherein artificial intelligence is used in steps (e) and / or (f).

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