A manufacturing method and device for a spherical retardation potential analyzer

Abstract

The present invention discloses a method for manufacturing a spherical retarding potential analyzer. First, a metal sheet is processed by stamping and heat treatment to obtain a spherical configuration part. Then, a thin spherical configuration part is obtained by electrochemical etching. Then, a spherical grid assembly is obtained by ultrafast laser etching. Finally, a shell and a collector are obtained by machining. The spherical grid assembly and the collector are assembled on the shell to obtain a spherical retarding potential analyzer. This scheme adopts electrochemical etching to obtain a thin spherical configuration part to maximize the shape accuracy of the spherical surface of the grid hole processing. Then, in view of the fact that thin walls are easy to deform, ultrafast laser etching is used to obtain a spherical grid assembly with high spherical shape accuracy and high grid hole coaxial assembly accuracy. Then, a spherical retarding potential analyzer with a spherical grid assembly is assembled to obtain the spherical retarding potential analyzer. The spherical grid assembly is used to accurately measure the energy of charged particles in an ionic liquid electrospray thruster.

Description

Technical Field

[0001] The present invention relates to the field of energy analysis technology, and in particular to a method for manufacturing a spherical retardation potential analyzer. Furthermore, the present invention also relates to a spherical retardation potential analyzer device manufactured using the above-mentioned method for manufacturing a spherical retardation potential analyzer. Background Art

[0002] An ionic liquid electrospray thruster (ILES) is an electrostatic electric thruster that uses an ionic liquid as a propellant and utilizes an electrostatic field to extract and accelerate ions of corresponding polarity from the propellant. The extracted ions include monomers and ion clusters (dimers, trimers, and even other polymers). Ion clusters can fragment under the influence of the electrostatic field between the extraction grid and the emitter, forming new ions / ion clusters and neutral molecules. Ion cluster fragmentation has a significant impact on thruster performance. Understanding the ion cluster fragmentation rate in the acceleration zone is crucial for propellant selection and thruster optimization design. Accurately measuring the energy distribution of charged particles in the beam using a retarding potential analyzer is an effective method for determining the ion cluster fragmentation rate.

[0003] A retarding potential analyzer (RPA) is a device used to measure the energy distribution of ions in a plasma. Typically, an RPA consists of at least three planar grids and a collector. The central grid serves as the retarding grid, while the other two grids are grounded. By sweeping a bias voltage (V) across the retarding grids, an equipotential surface is established between adjacent grounded grids, forming a charged particle barrier that only allows particles with energies E ≥ qV to pass through and ultimately reach the collector. By sweeping the bias voltage, the collected current and the corresponding retarding grid voltage form an IV curve, which can be analyzed to determine the energy distribution of the charged particles. However, the beam of an ionic liquid electrospray thruster exhibits a certain degree of divergence. If a planar RPA is used, the direction of flight of charged particles entering the RPA forms an angle θ with the direction of the retarding electric field. The retarding electric field only blocks the velocity component of the charged particle along the direction of the electric field, while the velocity component perpendicular to the electric field remains unchanged. Therefore, the actual cutoff energy of the charged particle is dependent on its angle of incidence θ, resulting in measurement errors related to the angle of incidence θ. If the incident angle θ is known, the measurement result can be corrected, but the incident direction of the particles in actual measurement cannot be accurately measured.

[0004] To address this measurement error, a concentric hemispherical grid structure is employed, aligning the charged particle's flight starting point at the center of the grid assembly. This ensures that the particle's incident direction is always aligned with the direction of the retarding electric field, thereby eliminating the error introduced by beam divergence. However, spherical grids are difficult to manufacture. To ensure high particle transmittance, the grids are typically constructed of thin conductive materials, with thicknesses ranging from tens to hundreds of microns. The grid apertures are oriented with their axes aligned with the normal to the sphere, pointing toward the center of the sphere, and the line width between the apertures is on the order of tens of microns. Forming apertures in planar grids is relatively simple, but reshaping a pre-formed grid into a spherical grid is prone to fractures between the grid apertures, resulting in extremely low yield rates. Furthermore, due to inelastic deformation during the forming process, the cross-sectional dimensions of the grid apertures vary compared to those in planar grids. During grid assembly, it is difficult to maintain high coaxial assembly precision for the apertures at the same location on each grid, resulting in low charged particle energy measurement accuracy. Summary of the Invention

[0005] The present invention provides a method and device for manufacturing a spherical retarding potential analyzer to solve the technical problem that a planar grid assembly in a retarding potential analyzer has an incident angle deviation, making it impossible to accurately measure the energy distribution of charged particles in an ionic liquid electrospray thruster. Spherical grid assemblies are difficult to manufacture and the coaxial assembly accuracy is difficult to ensure, making it impossible to perform high-precision measurement of the energy distribution of charged particles in an ionic liquid electrospray thruster.

[0006] According to one aspect of the present invention, a method for manufacturing a spherical blocking potential analyzer is provided, comprising the following steps: S1, processing a metal sheet by stamping and heat treatment to obtain a spherical configuration part, the spherical configuration part comprising an edge frame and a central sphere; S2, etching a grid hole processing sphere on the central sphere by electrochemical etching to obtain a thin spherical configuration part; S3, etching a grid hole array on the grid hole processing sphere of the thin spherical configuration part by ultrafast laser etching to obtain a spherical grid assembly; S4, obtaining a shell and a collector by machining, and assembling the spherical grid assembly and the collector on the shell to obtain a spherical blocking potential analyzer.

[0007] As a further improvement of the above technical solution:

[0008] Furthermore, step S2 specifically includes the following steps: S201, cleaning the spherical configuration part, spraying photoresist, and drying it in an environment with a temperature less than 80°C for more than 30 minutes, and then exposing it with ultraviolet light to immerse it in a developer to expose the outline of the area to be processed; S202, placing the spherical configuration part after exposure and development into an etching solution for electrochemical etching, and controlling the reaction time according to the reaction rate of the metal plate and the etching solution to achieve precise control of the thickness of the spherical surface of the gate hole processing, thereby obtaining a spherical surface of the gate hole processing with a thickness that meets the requirements; S203, after the etching of the spherical surface of the gate hole processing is completed, cleaning the thin spherical configuration part and removing the photoresist.

[0009] Furthermore, step S3 specifically includes the following steps: S311, multiple thin spherical configurations are stacked and fixed through edge frames and insulating gaskets arranged between two adjacent edge frames; S312, ultrafast laser etching is used to adjust the laser focal depth or laser position to complete the hole processing at the corresponding position on the same axis on each thin spherical configuration in sequence; S312, step S312 is repeated until the processing of the gate hole array is completed to obtain a spherical gate assembly.

[0010] Furthermore, step S3 specifically includes the following steps: S321, using an ultrafast laser etching process to complete the processing of the grid hole array on the grid hole processing sphere with the center position of the grid hole processing sphere as the positioning reference, and processing at least two positioning holes on the edge frame with the center position of the grid hole processing sphere as the positioning reference to obtain a spherical gate; S322, repeating step S321 to obtain multiple spherical gates in sequence, and then stacking and fixing the multiple spherical gates through the positioning holes and the insulating gaskets arranged between the two adjacent edge frames to obtain a spherical gate assembly.

[0011] Furthermore, between step S3 and step S4, the method further includes the following steps: cleaning the spherical gate assembly by an ultrasonic cleaning method, and then removing burrs on the surface of the spherical gate assembly during the laser processing by electrochemical polishing.

[0012] Furthermore, the holes in the hole array are arranged in a square shape; and / or the cross-sectional size of the holes in the hole array is in the range of 0.3-0.5 mm, and the line width between two adjacent holes is in the range of 0.04-0.06 mm.

[0013] Furthermore, in step S1 , stamping is adopted to punch out assembly holes on the edge frame.

[0014] Furthermore, in step S2, electrochemical etching is used to etch assembly holes on the edge frame.

[0015] Furthermore, before step S1, the method further includes step S0, designing and obtaining corresponding stamping dies and metal plates according to the desired design curvature and geometric dimensions of the gate.

[0016] According to another aspect of the present invention, a spherical blocking potential analyzer device is provided, which is manufactured using the above-mentioned manufacturing method of the spherical blocking potential analyzer.

[0017] The present invention has the following beneficial effects:

[0018] The manufacturing method of the spherical retardation potential analyzer in the present invention first uses stamping and heat treatment to process the metal plate to obtain a spherical configuration with an edge frame and a central spherical surface, and then uses an electrochemical etching method to etch a grid hole processing spherical surface on the central spherical surface to obtain a thin spherical configuration. During the electrochemical etching contact stress, the shape accuracy of the grid hole processing spherical surface can be guaranteed to the greatest extent. The edge frame can improve the overall rigidity, suppress the deformation of the grid hole processing spherical surface, and is conducive to the maintenance of the grid hole processing spherical surface, while facilitating the subsequent assembly of the spherical grid assembly; then, an ultrafast laser etching process is used to etch a grid hole array on the grid hole processing spherical surface of the thin spherical configuration to obtain a spherical grid assembly. Ultrafast laser etching can achieve submicron processing accuracy and has an effect similar to cold processing, which can effectively avoid the traditional conventional The deformation caused by the thermal effect of the laser is used to ensure the processing accuracy and spherical configuration of the grid hole array; finally, the shell and the collector are obtained by machining, and the spherical grid assembly and the collector are assembled on the shell to obtain a spherical blocking potential analyzer; this scheme adopts spherical forming first and then grid hole array processing to obtain a spherical grid assembly, and in the process, a thin spherical configuration is obtained by electrochemical etching to maximize the shape accuracy of the grid hole processing sphere, and then, in view of the characteristics of thin walls that are easy to deform, ultrafast laser is used to etch the grid hole array to obtain a spherical grid assembly with high spherical shape accuracy and high grid hole coaxial assembly accuracy, and then a spherical blocking potential analyzer with a spherical grid assembly is assembled, and the spherical grid assembly is used to achieve high-precision measurement of the energy of charged particles in the ionic liquid electrospray thruster.

[0019] In addition to the above-described objects, features and advantages, the present invention has other objects, features and advantages. The present invention will be further described in detail below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The accompanying drawings, which constitute part of this application, are intended to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are intended to explain the present invention and do not constitute an undue limitation of the present invention. In the accompanying drawings:

[0021] Figure 11 is a flowchart of the steps of a method for manufacturing a spherical retardation potential analyzer according to a preferred embodiment of the present invention;

[0022] Figure 2 Schematic diagram of the processing of step S1 in the manufacturing method of the spherical retardation potential analyzer according to the preferred embodiment of the present invention;

[0023] Figure 3 Schematic diagram of the processing of S2 in the manufacturing method of the spherical retardation potential analyzer according to the preferred embodiment of the present invention;

[0024] Figure 4 1 is a processing schematic diagram of step S3 in the manufacturing method of the spherical retardation potential analyzer according to a preferred embodiment of the present invention;

[0025] Figure 5 1 is a processing schematic diagram of step S3 in the manufacturing method of the spherical retardation potential analyzer according to a preferred embodiment of the present invention;

[0026] Figure 6 1 is a processing schematic diagram of step S3 in the manufacturing method of the spherical retardation potential analyzer according to a preferred embodiment of the present invention;

[0027] Figure 7 It is a processing schematic diagram of S4 in the manufacturing method of the spherical retardation potential analyzer of the preferred embodiment of the present invention. DETAILED DESCRIPTION

[0028] The embodiments of the present invention are described in detail below with reference to the accompanying drawings. However, the present invention can be implemented in many different ways as defined and covered below.

[0029] Figure 1 1 is a flowchart of the steps of a method for manufacturing a spherical retardation potential analyzer according to a preferred embodiment of the present invention; Figure 2 Schematic diagram of the processing of step S1 in the manufacturing method of the spherical retardation potential analyzer according to the preferred embodiment of the present invention; Figure 3 Schematic diagram of the processing of S2 in the manufacturing method of the spherical retardation potential analyzer according to the preferred embodiment of the present invention; Figure 4 1 is a processing schematic diagram of step S3 in the manufacturing method of the spherical retardation potential analyzer according to a preferred embodiment of the present invention; Figure 5 1 is a processing schematic diagram of step S3 in the manufacturing method of the spherical retardation potential analyzer according to a preferred embodiment of the present invention; Figure 6 1 is a processing schematic diagram of step S3 in the manufacturing method of the spherical retardation potential analyzer according to a preferred embodiment of the present invention; Figure 7 It is a processing schematic diagram of S4 in the manufacturing method of the spherical retardation potential analyzer of the preferred embodiment of the present invention.

[0030] like Figure 1-Figure 7As shown, the manufacturing method of the spherical blocking potential analyzer of this embodiment includes the following steps: S1, processing the metal plate by stamping and heat treatment to obtain a spherical configuration part, the spherical configuration part includes an edge frame and a central sphere; S2, etching a grid hole processing sphere on the central sphere by electrochemical etching to obtain a thin spherical configuration part; S3, etching a grid hole array on the grid hole processing sphere of the thin spherical configuration part by ultrafast laser to obtain a spherical grid assembly; S4, obtaining a shell and a collector by machining method, and assembling the spherical grid assembly and the collector on the shell to obtain a spherical blocking potential analyzer. Specifically, the manufacturing method of the spherical retardation potential analyzer in the present invention first uses stamping and heat treatment to process the metal plate to obtain a spherical configuration with an edge frame and a central spherical surface, and then uses an electrochemical etching method to etch a grid hole processing spherical surface on the central spherical surface to obtain a thin spherical configuration. During the electrochemical etching contact stress, the shape accuracy of the grid hole processing spherical surface can be guaranteed to the greatest extent. The edge frame can improve the overall rigidity, suppress the deformation of the grid hole processing spherical surface, and is beneficial to the maintenance of the grid hole processing spherical surface, while facilitating the subsequent assembly of the spherical grid assembly; then, an ultrafast laser etching process is used to etch a grid hole array on the grid hole processing spherical surface of the thin spherical configuration to obtain a spherical grid assembly. Ultrafast laser etching can achieve submicron processing accuracy and has an effect similar to cold processing, which can effectively avoid the traditional The deformation caused by the thermal effect of conventional laser is to ensure the processing accuracy and spherical configuration of the grid hole array; finally, the shell and collector are obtained by machining, and the spherical grid assembly and the collector are assembled on the shell to obtain a spherical blocking potential analyzer; this solution adopts spherical molding first and then grid hole array processing to obtain a spherical grid assembly, and during the processing, a thin spherical configuration is obtained by electrochemical etching to maximize the shape accuracy of the grid hole processing spherical surface. Then, in view of the characteristics of thin walls that are easy to deform, an ultrafast laser is used to etch the grid hole array to obtain a spherical grid assembly with high spherical shape accuracy and high grid hole coaxial assembly accuracy, and then a spherical blocking potential analyzer with a spherical grid assembly is assembled, and the spherical grid assembly is used to achieve high-precision measurement of the energy of charged particles in the ionic liquid electrospray thruster. Optionally, the metal plate is made of a particle-resistant material such as tungsten or molybdenum. It should be understood that the machining method in this embodiment is a well-known technology for those skilled in the art and will not be described in detail here. Optionally, ultrafast laser processing includes picosecond laser processing and femtosecond laser processing.

[0031] like Figure 3As shown, in this embodiment, step S2 specifically includes the following steps: S201, cleaning the spherical configuration part, spraying photoresist, and drying it in an environment with a temperature less than 80°C for more than 30 minutes, and then exposing it with ultraviolet light to immerse it in a developer to expose the outline of the area to be processed; S202, placing the spherical configuration part after exposure and development into an etching solution for electrochemical etching, and controlling the reaction time according to the reaction rate of the metal plate and the etching solution to achieve precise control of the thickness of the spherical surface of the gate hole processing, thereby obtaining a spherical surface of the gate hole processing with a thickness that meets the requirements; S203, after the etching of the spherical surface of the gate hole processing is completed, cleaning the thin spherical configuration part and removing the photoresist. Specifically, electrochemical etching is used to etch the central spherical surface of the spherical component to produce a spherical surface with a desired thickness. The edge frame is thicker than the spherical surface to prevent deformation during subsequent processing or assembly. Electrochemical etching offers high efficiency and low cost, while eliminating the mechanical stress associated with machining, helping to ensure the shape accuracy of the spherical surface. Preferably, the ideal thickness of the spherical surface is 0.08 mm.

[0032] like Figure 4-6As shown, in this embodiment, step S3 specifically includes the following steps: S311, multiple thin spherical configuration members are stacked and fixed through edge frames and insulating gaskets arranged between two adjacent edge frames; S312, ultrafast laser is used for etching processing, and the laser focal depth or laser position is adjusted to sequentially complete the hole processing at corresponding positions on the same axis on the thin spherical configuration member; S312, step S312 is repeated until the processing of the gate hole array is completed to obtain a spherical gate assembly. Specifically, after assembling multiple thin spherical components, an ultrafast laser is used to etch a grid hole array. The laser focal depth or laser position is adjusted to sequentially complete the hole machining at corresponding positions on the thin spherical components on the same axis, ensuring the coaxiality of the corresponding holes between the multiple thin spherical components. This increases the ion transmittance of the spherical grid assembly, thereby improving the measurement accuracy of charged particle energy. During the assembly process, insulating spacers are used to provide electrical insulation between the thin spherical components, preventing adjacent thin spherical components from conducting electricity and thus preventing the measurement of charged particle energy. Optionally, the insulating spacer has a thickness range of 1-5 mm. When the insulating spacer is less than 1 mm thick, discharge is more likely to occur between adjacent thin spherical surfaces. When the insulating spacer is thicker than 5 mm, the movement time of charged particles in the spherical grid assembly increases, causing particle breakage and affecting the measurement of the original charged particle energy. Optionally, the radius of curvature of the spherical grid on the spherical grid assembly corresponds to the distance between the ionic liquid electrospray thruster to be measured and the spherical grid. Preferably, the radius of curvature of the spherical grid of the spherical grid assembly closest to the ionic liquid electrospray thruster to be measured is 300 mm, and while receiving all the charged particles ejected by the ionic liquid electrospray thruster to be measured, high-precision measurement of the energy of the charged particles is achieved. Preferably, ultrafast laser etching uses a femtosecond laser, which has high processing accuracy and is free of thermal and mechanical stresses, thus avoiding the problem of easy deformation during thin spherical surface processing. Optionally, the insulating gasket is made of dielectric materials such as ceramics and quartz. Optionally, the insulating gasket is pressed between two adjacent thin spherical configurations. Optionally, after the multiple thin spherical configurations are assembled, a hollow gap is left in the radial direction to facilitate the removal of debris during ultrafast laser processing. Optionally, each thin spherical configuration is stacked and connected through positioning holes or positioning cones to ensure the positional accuracy between each other.

[0033] In this embodiment, step S3 specifically includes the following steps: S321, using an ultrafast laser etching process to complete the processing of the grid hole array on the grid hole processing sphere with the center position of the grid hole processing sphere as the positioning reference, and processing at least two positioning holes on the edge frame with the center position of the grid hole processing sphere as the positioning reference to obtain a spherical gate; S322, repeating step S321 to obtain multiple spherical gates in sequence, and then stacking and fixing the multiple spherical gates through the positioning holes and insulating gaskets arranged between two adjacent edge frames to obtain a spherical gate assembly. Specifically, the spherical gate is first obtained by ultrafast laser etching, and at least two positioning holes are processed during the processing to facilitate the assembly of the multiple spherical gates and ensure the coaxiality of the corresponding holes between the multiple spherical gates. Optionally, the insulating gasket is pressed between two adjacent spherical gates.

[0034] In this embodiment, between steps S3 and S4, there is also the step of cleaning the spherical gate assembly using an ultrasonic cleaning method, followed by electrochemical polishing to remove burrs on the surface of the spherical gate assembly generated during laser processing. Specifically, the spherical gate assembly has a layered structure, and ultrasonic cleaning can remove debris attached to the spherical gate assembly. Electrochemical polishing can then be used to remove burrs generated by vaporization products deposited during laser processing on the surface of the spherical gate assembly. It should be understood that the specific implementation steps of the ultrasonic cleaning method are well known to those skilled in the art and will not be detailed here.

[0035] like Figure 4-6 As shown, in this embodiment, the holes in the grid hole array are arranged in a square shape; and / or the cross-sectional size of the grid holes in the grid hole array is in the range of 0.3-0.5 mm. Specifically, the grid holes are arranged in a square shape, so the area between the multiple grid holes is small, and the ion transmittance of the spherical grid assembly is high; when the cross-sectional size of the grid holes in the grid hole array is between 0.3-0.5 mm, and the line width between two adjacent grid holes is in the range of 0.04-0.06 mm, the electric field distribution in the grid holes is uniform. Preferably, the cross-sectional size of the grid holes is 0.4 mm. Preferably, the line width between two adjacent grid holes is 0.05 mm. It should be understood that the line width refers to the minimum wall thickness between two adjacent grid holes.

[0036] In this embodiment, in step S1, assembly holes are punched out on the edge frame by stamping. Specifically, punching out the assembly holes by stamping facilitates the subsequent assembly of the spherical grid assembly.

[0037] In this embodiment, electrochemical etching is used to etch assembly holes on the edge frame in step S2. Specifically, the assembly holes are etched by electrochemical etching to facilitate the subsequent assembly of the spherical grid assembly.

[0038] In this embodiment, step S1 is preceded by step S0, wherein a corresponding stamping die and metal sheet are designed and obtained based on the desired gate design curvature and geometric dimensions. Specifically, the metal sheet is relatively thick to facilitate subsequent electrochemical etching. It should be understood that the spherical gate assembly utilizes a three-gate or four-gate structure, and since the distance between each spherical gate and the ionic liquid electrospray thruster being tested is different, the corresponding curvature radius and geometric dimensions are also different. Therefore, a corresponding stamping die and metal sheet must be designed and obtained for each spherical gate.

[0039] like Figure 7 As shown, the spherical retarding potential analyzer device of this embodiment is manufactured using the manufacturing method of the spherical retarding potential analyzer described above. Specifically, the spherical grid assembly in the spherical retarding potential analyzer device has high ion transmittance and uniform electric field, and high measurement accuracy of charged particle energy.

[0040] The foregoing description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Those skilled in the art will readily appreciate that various modifications and variations of the present invention are possible. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention are intended to be within the scope of protection of the present invention.

Claims

1. A method for manufacturing a spherical retardation potential analyzer, characterized in that: The following steps are involved: S1, processing the metal sheet by stamping and heat treatment to obtain a spherical configuration part, the spherical configuration part including an edge frame and a central sphere; S2, electrochemical etching is used to etch a grid hole on the central spherical surface to obtain a thin spherical structure; Step S2 specifically includes the following steps: S201, cleaning the spherical structure, spraying photoresist on it, and drying it in an environment with a temperature of less than 80°C for more than 30 minutes, followed by exposure to ultraviolet light, so that the outline of the area to be processed is exposed by immersing it in a developer; S202, placing the exposed and developed spherical structure into an etching solution for electrochemical etching, and controlling the reaction time according to the reaction rate of the metal plate and the etching solution to achieve precise control of the thickness of the spherical surface processed by the grid hole, thereby obtaining a spherical surface processed by the grid hole with a thickness that meets the requirements; S203, cleaning the thin spherical structure after etching the spherical surface of the grid hole to remove the photoresist; S3, etching a grid hole array on the grid hole processing spherical surface of the thin spherical structure by ultrafast laser etching to obtain a spherical grid assembly; S4, using a machining method to obtain a shell and a collector, assembling a spherical grid assembly and a collector on the shell to obtain a spherical blocking potential analyzer.

2. The method for manufacturing a spherical blocking potential analyzer according to claim 1, wherein: Step S3 specifically includes the following steps: S311, multiple thin spherical configurations are stacked and fixed by edge frames and insulating spacers arranged between two adjacent edge frames; S312, performing etching processing using an ultrafast laser, adjusting the laser focal depth or laser position to sequentially complete hole processing at corresponding positions on the same axis on each thin spherical configuration component; S312, repeat step S312 until the processing of the gate hole array is completed to obtain a spherical gate component.

3. The method for manufacturing a spherical blocking potential analyzer according to claim 1, wherein: Step S3 specifically includes the following steps: S321, using an ultrafast laser etching process to complete the processing of the grid hole array on the grid hole processing sphere with the center position of the grid hole processing sphere as a positioning reference, and processing at least two positioning holes on the edge frame with the center position of the grid hole processing sphere as a positioning reference to obtain a spherical grid; S322, repeating step S321, sequentially obtaining multiple spherical grids, and then stacking and fixing the multiple spherical grids through positioning holes and insulating gaskets arranged between two adjacent edge frames to obtain a spherical grid assembly.

4. The method for manufacturing a spherical blocking potential analyzer according to claim 1, wherein: The following steps are included between step S3 and step S4: The spherical grid component is cleaned by ultrasonic cleaning method, and then the burrs on the surface of the spherical grid component generated during laser processing are removed by electrochemical polishing.

5. The method for manufacturing a spherical retardation potential analyzer according to any one of claims 1 to 4, characterized in that: The holes in the hole array are arranged in a square shape; and / or The cross-sectional size of the grid holes in the grid hole array ranges from 0.3 to 0.5 mm, and the line width between two adjacent grid holes ranges from 0.04 to 0.06 mm.

6. The method for manufacturing a spherical retardation potential analyzer according to any one of claims 1 to 4, characterized in that: In step S1 , stamping is used to punch out assembly holes on the edge frame.

7. The method for manufacturing a spherical retardation potential analyzer according to any one of claims 1 to 4, characterized in that: In step S2 , electrochemical etching is used to etch mounting holes on the edge frame.

8. The method for manufacturing a spherical retardation potential analyzer according to any one of claims 1 to 4, characterized in that: Before step S1, the following steps are also included: S0, design and obtain the corresponding stamping die and metal sheet according to the design curvature and geometric dimensions of the required gate.

9. A spherical retardation potential analyzer device, characterized in that: The spherical retardation potential analyzer is manufactured using the manufacturing method of any one of claims 1 to 8.

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