Temperature simulation method, temperature control method and system for semiconductor waste gas treatment equipment

Abstract

The present application relates to the technical field of semiconductor manufacturing, and particularly relates to a temperature simulation method, a temperature control method and a system of a semiconductor waste gas treatment equipment, the temperature simulation method of the semiconductor waste gas treatment equipment comprising: simplifying a semiconductor waste gas treatment equipment model, and obtaining a calculation domain of a fluid passing area; performing grid division on the calculation domain; establishing a boundary condition of an operation parameter of the semiconductor waste gas treatment equipment; and obtaining a temperature simulation parameter of the semiconductor waste gas treatment equipment according to a computational fluid dynamics principle and the boundary condition. The temperature distribution of the whole semiconductor waste gas treatment equipment is obtained through simulation calculation, and the temperature value of a key position and the maximum / minimum value of the overall temperature are identified, so that the temperature field of the semiconductor waste gas treatment equipment is full-field and visualized.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, in particular to a temperature simulation method and system of a semiconductor waste gas treatment device, and a temperature control method and system. BACKGROUND

[0002] Semiconductor processes are precise and complex, and the corresponding semiconductor equipment involves complex mechanical, electrical, hydraulic, and even multiple physical and chemical reactions. The semiconductor waste gas treatment device not only includes mechanical, electrical, hydraulic, and gas controls itself, but also needs to handle process gas chemical and physical reactions. Therefore, the temperature of the device needs to be detected and controlled.

[0003] Currently, device temperature monitoring and temperature control are basically independent of each other, without a complete monitoring and control loop, which can easily lead to insufficient or excessive control adjustment, and a situation where one place is adjusted alone while another place has problems. The device generally has multiple temperature sensors installed to obtain temperature values at multiple measurement points, but cannot obtain temperature values at any position of the device. Therefore, the overall temperature of the device cannot be understood through a limited number of measurement points. The temperature sensor measurement points have requirements, and unreasonable position settings can easily miss the temperature peak value, which cannot accurately reflect the temperature of the device, so that timely and effective control cannot be achieved. SUMMARY

[0004] The present application provides a temperature simulation method and system of a semiconductor waste gas treatment device, and a temperature control method and system, which at least solve one of the technical problems in the related art. The temperature value at any point in the semiconductor waste gas treatment device is obtained through simulation, the maximum and minimum values of the temperature can be effectively identified, the extreme value of the temperature is used as a temperature control condition, and the precision of the temperature control is improved.

[0005] The present application provides a temperature simulation method of a semiconductor waste gas treatment device, comprising:

[0006] Simplifying a semiconductor waste gas treatment device model to obtain a calculation domain of a fluid passing area;

[0007] Grid division is performed on the calculation domain;

[0008] Boundary conditions of operating parameters of the semiconductor waste gas treatment device are established;

[0009] According to the computational fluid dynamics principle and the boundary conditions, temperature simulation parameters of the semiconductor waste gas treatment device are obtained.

[0010] According to the temperature simulation method of the semiconductor waste gas treatment device provided by the present application, the step of simplifying the semiconductor waste gas treatment device model to obtain the calculation domain of the fluid passing area comprises:

[0011] establishing a geometric model of the semiconductor waste gas treatment equipment;

[0012] simplifying the geometric model to obtain an inner surface model of the fluid passing region;

[0013] obtaining a calculation domain by closing the inner surface model.

[0014] According to the temperature simulation method of the semiconductor waste gas treatment equipment provided by the application, when the semiconductor waste gas treatment equipment is started, the boundary condition of the operation parameter of the semiconductor waste gas treatment equipment includes:

[0015] obtaining the temperature of the temperature measuring point on the semiconductor waste gas treatment equipment through the temperature acquisition module of the temperature control system;

[0016] setting the heating amount, gas flow and water flow of the semiconductor waste gas treatment equipment.

[0017] According to the temperature simulation method of the semiconductor waste gas treatment equipment provided by the application, when the semiconductor waste gas treatment equipment is started, the boundary condition of the operation parameter of the semiconductor waste gas treatment equipment includes:

[0018] obtaining the temperature of the temperature measuring point on the semiconductor waste gas treatment equipment through the temperature acquisition module of the temperature control system;

[0019] obtaining the heating amount, gas flow and water flow of the semiconductor waste gas treatment equipment through the output element of the temperature control system.

[0020] The application further provides a temperature simulation system for executing the temperature simulation method.

[0021] The application further provides a temperature control system, which comprises a temperature acquisition module, a main control module, a temperature adjustment module and the temperature simulation system, the temperature acquisition module is used for acquiring the temperature of the semiconductor waste gas treatment equipment and sending the temperature data to the temperature simulation system, the temperature control simulation system is used for receiving the temperature data and processing the temperature data into temperature simulation parameters and sending the temperature simulation parameters to the main control module, the main control module receives the temperature simulation parameters and processes the temperature simulation parameters into temperature adjustment instructions and sends the temperature adjustment instructions to the temperature adjustment module, and the temperature adjustment module is used for adjusting the temperature of the semiconductor waste gas treatment equipment.

[0022] According to the temperature control system provided by the application, the main control module comprises an input element, a control element and an output element, the input element is used for receiving the temperature simulation parameters, the control element is used for processing the temperature simulation parameters into the temperature adjustment instructions, and the output element is used for sending the temperature adjustment instructions to the temperature adjustment module.

[0023] The temperature acquisition module comprises a reaction gas temperature sensor, a combustion-supporting gas temperature sensor, a reaction cavity outer wall temperature sensor, a first-stage to N-stage processing gas temperature sensor and an exhaust gas temperature sensor; and the temperature adjustment module comprises a reaction gas heater, a combustion-supporting gas heater, a reaction cavity cooling water valve and first-stage to N-stage cooling water valves.

[0024] The application further provides a temperature control method for the temperature control system, comprising:

[0025] acquiring temperature data of the semiconductor waste gas treatment equipment;

[0026] obtaining temperature simulation parameters according to the temperature data;

[0027] obtaining temperature adjustment instructions according to the temperature simulation parameters;

[0028] adjusting the temperature of the semiconductor waste gas treatment equipment according to the temperature adjustment instructions.

[0029] The application further provides a temperature control method for the temperature control system, wherein the step of obtaining temperature adjustment instructions according to the temperature simulation parameters comprises:

[0030] determining that the temperature of the gas reaction region is less than a target value of the reaction region temperature, and increasing the heating amount of the reaction gas and the combustion-supporting gas;

[0031] determining that the temperature of the reaction cavity outlet region is greater than a target value of the reaction cavity outlet region, and increasing the cooling water flow rate of the reaction cavity;

[0032] determining that the temperature of the exhaust gas outlet region is greater than a target value of the exhaust gas outlet region, and determining that the temperature value of the gas treatment device is greater than a target value of the gas treatment device, and increasing the cooling water flow rate of the gas treatment device.

[0033] The temperature simulation method of the semiconductor waste gas treatment equipment simplifies the simulation model of the semiconductor waste gas treatment equipment, acquires the regions through which the fluids such as gases and liquids in the model pass as a calculation domain, divides the grid of the calculation domain, simultaneously takes the data of the limited measuring points of the semiconductor waste gas treatment equipment, i.e. the operation parameters capable of being measured on the semiconductor waste gas treatment equipment as boundary conditions, performs calculation based on the principle of computational fluid dynamics, obtains the temperature values of any points inside the semiconductor waste gas treatment equipment, identifies the key positions and the temperature values thereof, i.e. the key temperature values, obtains the overall temperature distribution in the semiconductor waste gas treatment equipment through simulation calculation, identifies the temperature values of the key positions and the maximum / minimum values of the overall temperature, and makes the temperature field of the semiconductor waste gas treatment equipment and the temperature visualization.

[0034] The application can obtain the temperature value of any point in the semiconductor waste gas treatment equipment according to the temperature test data of limited measuring points, on the one hand, the use amount of temperature sensors on the semiconductor temperature treatment equipment is reduced, and the cost is reduced, on the other hand, the temperature value of the area (for example, the gas reaction area) which is inconvenient to set the temperature sensor can also be obtained, the requirement for the position of the temperature sensor is reduced, and the error judgment of the temperature condition of the equipment caused by the poor position of the temperature sensor is avoided. The temperature value of any point in the semiconductor waste gas treatment equipment is obtained through simulation, the maximum value and the minimum value of the temperature can be effectively identified, the extreme value of the temperature is taken as the condition of the temperature control, and the precision of the temperature control is improved.

[0035] In addition to the technical problems solved by the application, the technical features of the technical solutions and the advantages brought by the technical features, other technical features of the application and the advantages brought by the technical features will be further described with reference to the drawings, or be understood through the practice of the application. BRIEF DESCRIPTION OF DRAWINGS

[0036] In order to more clearly illustrate the technical solutions in the embodiments of the application or the prior art, the drawings needed to be used in the embodiments or the prior art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the application, and other drawings can be obtained by those skilled in the art without creative labor.

[0037] Figure 1 is the temperature contour of the reaction cavity temperature simulation result provided by the application;

[0038] Figure 2 is a structural schematic view of the temperature control system provided by the application;

[0039] Figure 3 is a flow chart of the temperature simulation method of the semiconductor waste gas treatment equipment provided by the application, which is simulated by computational fluid dynamics;

[0040] Reference signs:

[0041] 100, temperature collection module; 110, reaction gas temperature sensor; 120, combustion-supporting gas temperature sensor; 130, reaction cavity outer wall temperature sensor; 140, first-stage to N-stage processing gas temperature sensor; 150, exhaust gas temperature sensor;

[0042] 200, temperature simulation system; 300, input element; 400, control element; 500, output element;

[0043] 600, temperature adjustment module; 610, reaction gas heater; 620, combustion gas heater; 630, reaction cavity cooling water valve; 640, first to Nth cooling water valve. DETAILED DESCRIPTION

[0044] The embodiments of the present application will be further described below in conjunction with the drawings and examples. The following examples are used to illustrate the present application, but cannot be used to limit the scope of the present application.

[0045] In the description of the embodiments of the present application, it should be noted that the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the embodiments of the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the embodiments of the present application. In addition, the terms "first", "second", "third" are only for the purpose of description, and cannot be understood as indicating or implying relative importance.

[0046] In the description of the embodiments of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "connected", "connected" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium. For those skilled in the art, the specific meaning of the above terms in the embodiments of the present application can be understood according to the specific circumstances.

[0047] In the embodiments of the present application, unless otherwise explicitly specified and limited, the first feature is "on" or "under" the second feature, which can be that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature "above", "above" and "above" the second feature can be that the first feature is directly above or obliquely above the second feature, or only indicates that the horizontal height of the first feature is higher than that of the second feature. The first feature "below", "below" and "below" the second feature can be that the first feature is directly below or obliquely below the second feature, or only indicates that the horizontal height of the first feature is less than that of the second feature.

[0048] In addition, in the description of the embodiments of the present application, unless otherwise specified, the meaning of "a plurality of", "a plurality of", "a plurality of" is two or more, and the meaning of "several", "several", "several" is one or more.

[0049] In the description of the present specification, the description of the terms "one embodiment", "some embodiments", "an example", "a specific example", or "some examples" and the like means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any appropriate manner in any one or more embodiments or examples. In addition, the person skilled in the art can combine and combine the different embodiments or examples described in the present specification and the features of the different embodiments or examples without contradiction.

[0050] The semiconductor waste gas treatment equipment mainly comprises an air inlet module, a reaction module, a multi-stage gas treatment module, an air exhaust module and the like. The air inlet module comprises a reaction gas air inlet module and a combustion-supporting gas air inlet module, both of which comprise a heating device; the reaction module comprises a reaction cavity and a cooling device, and the cooling device adopts water cooling; the multi-stage gas treatment module comprises N gas treatment modules connected in series, and each gas treatment module comprises a cooling device, and the cooling device adopts water cooling; the air exhaust module comprises a gas exhaust device communicated with the multi-stage gas treatment module.

[0051] The temperature simulation method of the semiconductor waste gas treatment equipment provided by the embodiment of the present application comprises:

[0052] Simplify the semiconductor waste gas treatment equipment model, and obtain the calculation domain of the region passed by the fluid;

[0053] Grid division is performed on the calculation domain;

[0054] The boundary conditions of the operating parameters of the semiconductor waste gas treatment equipment are established;

[0055] According to the principle of computational fluid dynamics and the boundary conditions, the temperature simulation parameters of the semiconductor waste gas treatment equipment are obtained.

[0056] The temperature simulation method of the semiconductor waste gas treatment equipment provided by the embodiment of the present application simplifies the simulation model of the semiconductor waste gas treatment equipment, obtains the region passed by the gas, liquid and the like in the model as the calculation domain, divides the calculation domain into grids, simultaneously takes the data of the limited measuring points of the semiconductor waste gas treatment equipment, i.e. the operating parameters that can be measured on the semiconductor waste gas treatment equipment as the boundary conditions, performs calculation based on the principle of computational fluid dynamics, obtains the temperature value of any point inside the semiconductor waste gas treatment equipment, identifies the key position and the temperature value thereof, i.e. the key temperature value, obtains the overall temperature distribution in the semiconductor waste gas treatment equipment through simulation calculation, identifies the temperature value of the key position and the maximum value / minimum value of the overall temperature, and realizes the temperature field and visualization of the semiconductor waste gas treatment equipment.

[0057] The application can obtain the temperature value of any point in the semiconductor waste gas treatment equipment according to the temperature test data of a limited number of measuring points, on the one hand, the use amount of temperature sensors on the semiconductor temperature treatment equipment is reduced, and the cost is reduced, on the other hand, the temperature value of the area (for example, the gas reaction area) where the temperature sensor is inconvenient to set can also be obtained, the requirement for the setting position of the temperature sensor is reduced, and the false judgment of the temperature condition of the equipment caused by the poor setting position of the temperature sensor is avoided. The temperature value of any point in the semiconductor waste gas treatment equipment is obtained through simulation, the maximum and minimum values of the temperature can be effectively identified, the extreme value of the temperature is taken as the condition of temperature control, and the precision of temperature control is improved.

[0058] As shown in Figure 3 Computational fluid dynamics is to solve fluid mechanics problems by numerical calculation method. The basic control equations to be solved in fluid mechanics include: mass conservation equation, momentum conservation equation and energy conservation equation. The calculation domain is continuous, and an infinite number of control equations are needed to describe it. Computational fluid dynamics discretizes the calculation domain, and only needs to construct and solve the control equations for a limited number of grids (or nodes).

[0059] The solving method of the discretized control equation includes finite difference method, finite volume method and finite element method, here mainly adopts the finite volume method. The finite volume method divides the calculation domain into different control volumes, and integrates the differential equation to be solved for each control volume, thereby obtaining a limited number of discrete equations. These discrete equations are solved by iteration method, and the balance of residual error or some physical quantity is taken as the condition for the completion of the iteration method, which is called "iterative convergence". Iterative convergence is regarded as the completion of simulation, and the simulation system outputs the physical quantity to be solved.

[0060] In this embodiment, the boundary conditions such as temperature, heating amount, gas flow, water flow, etc. can be specific numerical values or numerical ranges; the temperature value output of the key position includes but is not limited to: gas reaction area temperature, cooling water temperature, internal temperature of each stage of gas treatment device, and exhaust outlet cross section temperature.

[0061] According to one embodiment of the application, the step of obtaining the calculation domain of the fluid passing area of the simplified semiconductor waste gas treatment equipment model includes:

[0062] Establishing a geometric model of the semiconductor waste gas treatment equipment;

[0063] Simplifying the geometric model to obtain an inner surface model of the fluid passing area;

[0064] Obtaining the calculation domain by closing the inner surface model.

[0065] In the embodiment, firstly, a geometric model of the semiconductor waste gas treatment equipment is established, a region through which a fluid such as gas or liquid flows is extracted, and an inner surface model is obtained after simplifying the geometric model; the inner surface model is closed, and the closed region is taken as a calculation domain.

[0066] According to one embodiment of the present application, when the semiconductor waste gas treatment equipment is started, the boundary condition of the operation parameter of the semiconductor waste gas treatment equipment includes:

[0067] The temperature of the temperature measuring point on the semiconductor waste gas treatment equipment is acquired by the temperature acquisition module 100 of the temperature control system.

[0068] The heating amount, the gas flow and the water flow of the semiconductor waste gas treatment equipment are set.

[0069] In the embodiment, in the initial starting stage of the semiconductor waste gas treatment equipment, the temperature of each temperature measuring point on the semiconductor waste gas treatment equipment in the boundary condition is obtained by a sensor, and the semiconductor waste gas treatment equipment is just started, and the operation of each device in the semiconductor waste gas treatment equipment is not stable, so the heating amount, the gas flow and the water flow in the boundary condition are established by external setting input.

[0070] According to one embodiment of the present application, when the semiconductor waste gas treatment equipment is in the running state, the boundary condition of the operation parameter of the semiconductor waste gas treatment equipment includes:

[0071] The temperature of the temperature measuring point on the semiconductor waste gas treatment equipment is acquired by the temperature acquisition module 100 of the temperature control system.

[0072] The heating amount, the gas flow and the water flow of the semiconductor waste gas treatment equipment are acquired by the output element 500 of the temperature control system.

[0073] In the embodiment, after the semiconductor waste gas treatment equipment has entered the normal running stage, the temperature of each temperature measuring point on the semiconductor waste gas treatment equipment in the boundary condition can also be obtained by a sensor, and the heating amount, the gas flow and the water flow in the boundary condition can be obtained on the output element 500 after the temperature simulation parameter obtained after the semiconductor waste gas treatment equipment is simulated by the temperature simulation method is analyzed and processed by the temperature control system.

[0074] The embodiment of the present application also provides a temperature simulation system for executing the temperature simulation method of the above-mentioned embodiment.

[0075] Specifically, taking the simulation result of the reaction cavity temperature as an example, as shown in Figure 2The temperature contours are isotherms. The temperature sensor arranged on the outer wall of the reaction chamber cannot measure the temperature values of the concerned areas and cannot obtain the temperature distribution inside the reaction chamber, but the simulation method executed by the simulation system can obtain the temperature values of the two concerned areas, i.e., the gas reaction area and the position of the outlet of the reaction chamber.

[0076] As shown in Figure 1 The temperature control system according to the embodiment of the present application is provided on the semiconductor waste gas treatment equipment, and the temperature simulation parameters obtained by the temperature simulation system 200 are input into the main control module after being screened, the main control module processes and identifies the temperature simulation parameters, and then sends the control instructions to the temperature adjustment module 600 to control the related elements of the semiconductor waste gas treatment equipment, so that the temperature control is realized.

[0077] The temperature control system according to the embodiment of the present application is provided on the semiconductor waste gas treatment equipment, and the temperature simulation parameters obtained by the temperature simulation system 200 are input into the main control module after being screened, the main control module processes and identifies the temperature simulation parameters, and then sends the control instructions to the temperature adjustment module 600 to control the related elements of the semiconductor waste gas treatment equipment, so that the temperature control is realized.

[0078] The temperature control system according to the embodiment of the present application is provided on the semiconductor waste gas treatment equipment, and the temperature simulation parameters obtained by the temperature simulation system 200 are input into the main control module after being screened, the main control module processes and identifies the temperature simulation parameters, and then sends the control instructions to the temperature adjustment module 600 to control the related elements of the semiconductor waste gas treatment equipment, so that the temperature control is realized.

[0079] According to one embodiment of the present application, the main control module comprises an input element 300, a control element 400 and an output element 500, the input element 300 is used to receive the temperature simulation parameters, the control element 400 is used to process the temperature simulation parameters into temperature adjustment instructions, and the output element 500 is used to send the temperature adjustment instructions to the temperature adjustment module 600. In this embodiment, the input element 300 processes and transmits the key temperature values obtained by simulation to the control element 400, the control element 400 analyzes and processes the key temperature values to generate the temperature adjustment instructions according to the control rules, and then outputs the temperature adjustment instructions to the temperature adjustment module 600 through the output element 500.

[0080] According to one embodiment of the present application, the temperature acquisition module 100 comprises a reaction gas temperature sensor 110, a combustion-supporting gas temperature sensor 120, a reaction chamber outer wall temperature sensor 130, a first-stage to N-stage processing gas temperature sensor 140, and an exhaust gas temperature sensor 150; the temperature adjustment module 600 comprises a reaction gas heater 610, a combustion-supporting gas heater 620, a reaction chamber cooling water valve 630, and a first-stage to N-stage cooling water valve 640. In this embodiment, the temperature acquisition module 100 mainly comprises sensors, is installed on the semiconductor waste gas treatment equipment, can monitor the temperature at the installation position in real time, and transmits the obtained temperature data to the temperature simulation system 200. The temperature adjustment module 600 mainly comprises heaters and valves, is also installed on the semiconductor waste gas treatment equipment, and adjusts the switch of the corresponding heater, i.e. the heating temperature, and the switch and opening degree of the corresponding valve according to the corresponding control scheme after receiving the temperature adjustment instruction issued by the temperature adjustment module 600.

[0081] As shown in Figure 1 , the present application also provides a temperature control method, which is used for the temperature control system of the above-mentioned embodiments, and comprises the following steps:

[0082] obtaining temperature data of the semiconductor waste gas treatment equipment;

[0083] obtaining temperature simulation parameters according to the temperature data;

[0084] obtaining a temperature adjustment instruction according to the temperature simulation parameters;

[0085] adjusting the temperature of the semiconductor waste gas treatment equipment according to the temperature adjustment instruction.

[0086] The temperature control method of the present application realizes the temperature control of the semiconductor waste gas treatment equipment through the temperature control system. The temperature acquisition module 100 obtains the temperature data of the semiconductor waste gas treatment equipment, the temperature simulation system 200 obtains the temperature simulation parameters according to the temperature data, and the temperature adjustment module 600 adjusts the temperature of the semiconductor waste gas treatment equipment according to the temperature adjustment instruction.

[0087] The present application effectively combines temperature monitoring and temperature control, establishes a complete monitoring and control loop, avoids the problems of insufficient or excessive control adjustment, and the situation that one place is adjusted alone and another place has problems. The equipment can obtain the temperature value at any position of the equipment on the basis of installing multiple temperature sensors and obtaining the temperature values at multiple measuring points, and has a general understanding of the temperature of the equipment through a limited number of measuring points. The problems that the setting of the measuring points of the temperature sensors has requirements, the unreasonable position setting is easy to miss the temperature peak value, and the equipment temperature cannot be accurately reflected, so that the equipment cannot be timely and effectively controlled are solved.

[0088] According to one embodiment of the present application, the step of obtaining temperature adjustment instructions according to the temperature simulation parameters comprises:

[0089] determining that the temperature of the gas reaction region is less than the target value of the temperature of the reaction region, increasing the heating amount of the reaction gas and the combustion-supporting gas;

[0090] determining that the temperature of the reaction chamber outlet region is greater than the target value of the temperature of the reaction chamber outlet region, increasing the flow of the cooling water of the reaction chamber;

[0091] determining that the temperature of the exhaust outlet region is greater than the target value of the temperature of the exhaust outlet region, determining that the temperature value of the gas treatment device is greater than the target value of the gas treatment device, and increasing the flow of the cooling water of the gas treatment device.

[0092] In this embodiment, the target values of each region of the semiconductor waste gas treatment equipment are preset in the control element 400. After the temperature simulation data is sent to the control element 400 after being filtered, the control element 400 compares the temperature simulation data of the corresponding region with the preset target values, and outputs control instructions according to the comparison results. The specific control rules are as follows: when the temperature of the gas reaction region is less than the target value, the heating amount of the reaction gas and the combustion-supporting gas is increased; when the temperature of the reaction chamber outlet region is greater than the target value, the flow of the cooling water of the reaction chamber is increased; when the temperature of the exhaust outlet region is greater than the target value, the temperature values of each level of the gas treatment device from the first level to the Nth level are identified in sequence, and are compared with the target values of each level of the gas treatment device. For the gas treatment device whose temperature is higher than the target value, the flow of the cooling water of the gas treatment device is increased.

[0093] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, and are not intended to limit the same. Although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacements to some technical features thereof. Such modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A temperature control method, characterized in that: A temperature control system is used, comprising a temperature acquisition module, a main control module, a temperature adjustment module, and a temperature simulation system. The temperature acquisition module acquires the temperature of the semiconductor waste gas treatment equipment and sends the temperature data to the temperature simulation system. The temperature simulation system receives the temperature data, processes it into temperature simulation parameters, and sends these parameters to the main control module. The main control module receives the temperature simulation parameters, processes them into temperature adjustment commands, and sends these commands to the temperature adjustment module. The temperature adjustment module can be used to adjust the temperature of the semiconductor waste gas treatment equipment. The temperature control method includes: Acquire temperature data from semiconductor exhaust gas treatment equipment; Temperature simulation parameters are obtained based on temperature data; Temperature adjustment commands are obtained based on temperature simulation parameters; Adjust the temperature of the semiconductor waste gas treatment equipment according to the temperature adjustment command; The step of obtaining the temperature adjustment command based on the temperature simulation parameters includes: If the temperature in the gas reaction zone is determined to be lower than the target temperature value, increase the heating amount of the reactant gas and the combustion-supporting gas. If the temperature in the reaction chamber outlet region is determined to be greater than the target value for the reaction chamber outlet region, increase the cooling water flow rate in the reaction chamber. If the temperature in the exhaust outlet area is determined to be greater than the target value for the exhaust outlet area, and the temperature value of the gas treatment device is determined to be greater than the target value for the gas treatment device, the cooling water flow rate of the gas treatment device should be increased. The temperature simulation system is used to execute a temperature simulation method, which includes: Simplify the model of semiconductor exhaust gas treatment equipment and obtain the computational domain of the area through which the fluid passes; Divide the computational domain into grids; Establish boundary conditions for the operating parameters of the semiconductor waste gas treatment equipment; Based on the principles of computational fluid dynamics and boundary conditions, the temperature simulation parameters of the semiconductor waste gas treatment equipment are obtained.

2. The temperature control method according to claim 1, characterized in that: The main control module includes an input element, a control element, and an output element. The input element is used to receive the temperature simulation parameters, the control element is used to process the temperature simulation parameters into the temperature adjustment command, and the output element is used to send the temperature adjustment command to the temperature adjustment module.

3. The temperature control method according to claim 1, characterized in that: The temperature acquisition module includes a reaction gas temperature sensor, a combustion-supporting gas temperature sensor, a reaction chamber outer wall temperature sensor, a primary to N-stage processing gas temperature sensor, and an exhaust gas temperature sensor; the temperature regulation module includes a reaction gas heater, a combustion-supporting gas heater, a reaction chamber cooling water valve, and a primary to N-stage cooling water valve.

4. The temperature control method according to claim 1, characterized in that: The simplified semiconductor waste gas treatment device model, the step of obtaining the computational domain of the fluid passage area includes: Establish a geometric model of the semiconductor waste gas treatment equipment; Simplify the geometric model to obtain the inner surface model of the area through which the fluid passes; The computational domain is obtained by using a closed inner surface model.

5. The temperature control method according to claim 1, characterized in that: When the semiconductor exhaust gas treatment equipment is started, the boundary conditions for establishing the operating parameters of the semiconductor exhaust gas treatment equipment include: The temperature of the temperature measuring point on the semiconductor waste gas treatment equipment is obtained through the temperature acquisition module of the temperature control system. Set the heating capacity, gas flow rate, and water flow rate of the semiconductor waste gas treatment equipment.

6. The temperature control method according to claim 1, characterized in that: When the semiconductor waste gas treatment equipment is in operation, the boundary conditions for establishing the operating parameters of the semiconductor waste gas treatment equipment include: The temperature of the temperature measuring point on the semiconductor waste gas treatment equipment is obtained through the temperature acquisition module of the temperature control system. The heating amount, gas flow rate, and water flow rate of the semiconductor waste gas treatment equipment are obtained through the output elements of the temperature control system.

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