Semiconductor structure and method of manufacturing the same
By controlling the crosslinking reaction temperature range and heating process of the mask layer, and utilizing the good fluidity of the initial second mask layer, the problem of uneven mask layer thickness in semiconductor structures was solved, achieving thickness uniformity and process simplification, and reducing fabrication costs.
CN115223864BActive Publication Date: 2026-06-09CHANGXIN MEMORY TECH INC
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CHANGXIN MEMORY TECH INC
- Filing Date
- 2022-07-18
- Publication Date
- 2026-06-09
AI Technical Summary
Technical Problem
The uneven thickness of the mask layer in different regions of a semiconductor structure leads to a decrease in the accuracy of subsequent process steps and increases the fabrication cost and process complexity.
Method used
By controlling the temperature range and heating process of the crosslinking reaction when forming the initial first mask layer and the initial second mask layer in different regions, the fluidity of the initial second mask layer is extended. Its good fluidity is used to compensate for the deficiencies of the initial first mask layer, and gradually solidifies to form a mask layer with uniform thickness.
Benefits of technology
This improved the uniformity of mask layer thickness in different regions, simplified the fabrication process, and reduced costs.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN115223864B_ABST
Abstract
Embodiments of the present disclosure provide a semiconductor structure and a preparation method thereof. The preparation method comprises: providing a substrate, the substrate having a first region and a second region adjacent to each other; forming an initial first mask layer on the first region and the second region, the initial first mask layer having a first temperature at which the initial first mask layer starts to occur cross-linking reaction; forming an initial second mask layer on a side of the initial first mask layer away from the substrate, the initial second mask layer having a second temperature at which the initial second mask layer starts to occur cross-linking reaction, the second temperature being lower than the first temperature, and the initial second mask layer having a wider cross-linking reaction temperature interval than the initial first mask layer; and heating the initial first mask layer and the initial second mask layer, the initial first mask layer being in a flow state for a duration greater than that of the initial second mask layer. Embodiments of the present disclosure are at least advantageous in simplifying the preparation process of the semiconductor structure while improving the thickness uniformity of the mask layer.
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