Grid side wall imaging method
By covering the semiconductor structure with a polycrystalline carbon layer and using oxygen-containing plasma to remove the main sidewalls, the problem of voids in the high-stress via etching stop layer is solved, the process flow is simplified and the cost is reduced, and the specific etching cavity is avoided. needs.
CN103824765AActive Publication Date: 2014-05-28SHANGHAI HUALI MICROELECTRONICS CORP
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHANGHAI HUALI MICROELECTRONICS CORP
- Filing Date
- 2013-11-26
- Publication Date
- 2014-05-28
AI Technical Summary
⚠Technical Problem
In the existing high-stress through-hole etching stop layer process, the excessive thickness of the silicon nitride film causes void problems, and the existing SPT process requires a specific etching cavity, which complicates the process and increases production costs.
⚗Method used
A polycrystalline carbon layer is used to cover the semiconductor structure, and polycrystalline carbon sidewalls are formed through partial removal. Oxygen-containing plasma is used to remove the main sidewalls, simplifying the process and reducing costs.
🎯Benefits of technology
It effectively solves the void problem in the high-stress via hole etching stop layer process, avoids the need for a specific etching cavity, simplifies the process flow and reduces production costs.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention discloses a grid side wall imaging method. The method comprises the steps that a semiconductor structure which has a grid and a first side wall which covers the side wall of the grid is provided; a polycrystalline carbon layer is prepared to cover the surface of the semiconductor structure; the polycrystalline carbon layer is partially removed, so that a second side wall of the grid is formed on the surface of the first side wall; after a source drain implantation process is carried out on the semiconductor structure, the second side wall is removed; and a source drain annealing technology is continued. According to the grid side wall imaging method provided by the invention, through oxygenated plasma treatment, a polycrystalline carbon side wall which is used as a main side wall can be neatly removed; without using an SPT process which needs to be carried out in a specific etching cavity, the problem of void in a high stress through hole etching stop layer process can be solved; a process flow is simplified; and the production cost is reduced.
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