Heat source device, substrate support device, and substrate processing facility

Abstract

The present invention relates to a heat source device, a substrate support device, and a substrate processing facility including the heat source device and the substrate support device. According to the present invention, a substrate can be uniformly heated and stably supported by a chamber, a substrate support device, and a heat source device. The chamber has an inner space in which the substrate is processed. The substrate support device is installed in the chamber to stably support the substrate, and the heat source device is installed in the chamber to uniformly heat the substrate.

Description

Technical Field

[0001] The present invention relates to a heat source device, a substrate support device, and a substrate processing facility, and more particularly to a heat source device, a substrate support device, and a substrate processing facility that can uniformly heat a substrate and stably support the substrate. Background Art

[0002] Rapid thermal processing (RTP) is a method of heating a substrate by irradiating the substrate with radiation emitted from a heat source such as a tungsten lamp. Compared with a conventional substrate heat treatment method using a furnace, such a rapid thermal processing method can rapidly heat or cool the substrate, and is easy to control pressure conditions or temperature ranges, so that the quality of substrate heat treatment can be improved.

[0003] However, as the size of the substrate increases, it is difficult to uniformly heat the entire substrate using a heat source. Therefore, various efforts are being made to uniformly heat the entire substrate, such as shortening the distance between the heat source and the substrate or changing the arrangement of the heat source.

[0004] Meanwhile, in rapid thermal processing, a method of rotating the substrate to uniformly heat the substrate is applied. Therefore, a substrate support device that can support the substrate in a rotatable manner is installed in a substrate processing space. The substrate support device includes an annular substrate support member and an annular rotating member. The annular substrate support member can minimize the area in contact with the substrate and support the substrate in a horizontal direction, so as to suppress a temperature deviation across the substrate during substrate processing. The annular rotating member can be rotatably installed on the bottom of the substrate support member.

[0005] At this time, since the rotating member has an outer diameter larger than the outer diameter of the substrate support member, the rotating member is directly exposed to the radiation emitted from the heat source during substrate processing. Although the substrate support member is also exposed to radiation during substrate processing, since the substrate support member is formed of the same material as the substrate, the substrate support member is not easily deformed even when overheated. In addition, since the substrate support member has a relatively small size, even when the substrate support member is deformed, the amount of deformation is small, so that the substrate can be stably supported. However, since the rotating member is formed of a material different from that of the substrate support member and has a size larger than that of the substrate support member, when the rotating member is overheated and deformed due to radiation, the amount of deformation is larger than that of the substrate support member, so that the substrate cannot be stably supported.

[0006] [Prior Art Documents]

[0007] Patent Document 1: KR10-2005-0050660A

[0008] Patent Document 2: KR10-2020-0053347A Summary of the Invention

[0009] [Problems to be Solved by the Invention]

[0010] The present invention provides a heat source device, a substrate support device, and a substrate processing facility that can uniformly heat a substrate.

[0011] In addition, the present invention provides a heat source device, a substrate support device, and a substrate processing facility that can stably support a substrate.

[0012] [Technical Means for Solving the Problems]

[0013] According to an embodiment of the present invention, a heat source device for processing a substrate may include: a plurality of heat sources; and a support member provided with an insertion hole and a groove, the insertion hole being formed to extend in one direction to insert the plurality of heat sources, the groove being formed in one side of the insertion hole to collect and reflect radiation emitted from the plurality of heat sources, wherein the groove may include a plurality of first grooves and a plurality of second grooves, the plurality of first grooves being formed in the support member to form a first group extending in a first direction intersecting the extending direction of the insertion hole, the plurality of second grooves being formed in the support member to form a second group extending in a second direction intersecting the extending direction of the insertion hole and orthogonal to the first direction.

[0014] The first group and the second group may be alternately arranged in the first direction and the second direction, the first group may be arranged to be spaced apart to form a line in the first direction, and the second group may be arranged in at least one side of the first group to form a line in the second direction.

[0015] The first group may be arranged to be surrounded by the second group, and the second group may be arranged to be surrounded by the first group.

[0016] The plurality of first grooves and the plurality of second grooves may be formed to have the same diameter, the length of the first group in the first direction may be equal to the length of the second group in the second direction, and the length of the first group in the second direction may be equal to the length of the second group in the first direction.

[0017] The first group may include a plurality of first grooves arranged in 3 columns and 2 rows, and the second group may include a plurality of second grooves arranged in 2 columns and 3 rows.

[0018] The distance between the centers of adjacent first grooves, the distance between the centers of adjacent second grooves, and the distance between the center of an adjacent first groove and the center of a second groove may be the same.

[0019] The first group may be disposed at the center of the support member, and the center of a first groove in one of the first row of the first column, the second row of the first column, the first row of the third column, and the second row of the third column disposed in the first group may be disposed at the center of the support member.

[0020] According to another embodiment of the present invention, a substrate support device may include: a rotating member formed in an annular shape; a connecting member formed in an annular shape and installed in an upper portion of the rotating member; and a substrate support member formed in an annular shape and installed in an upper portion of the connecting member to extend outward from the connecting member, the substrate support member making local contact with a lower surface of a substrate.

[0021] The substrate support member may be formed to be completely disposed at a position below the lower surface of the substrate.

[0022] The substrate support member may include: a main body extending in a direction intersecting an extending direction of the substrate; a support unit capable of contacting the substrate and connected to an upper portion of the main body to extend in a direction intersecting the extending direction of the main body; and a mounting unit capable of contacting the connecting member and connected to a lower portion of the main body to extend in a direction intersecting the extending direction of the main body, wherein the main body and the mounting unit may be formed in an annular shape, and wherein an outer diameter of the main body may be greater than an outer diameter of the connecting member, and an outer diameter of the mounting unit may be less than the outer diameter of the main body.

[0023] An upper surface of the main body may be formed as a plane.

[0024] The upper surface of the main body may be formed to be inclined downward to the outside.

[0025] An angle between the support unit and the main body may be greater than or equal to 90° and less than 180°.

[0026] The substrate support member may include a heat insulating layer formed on at least a lower surface of the main body.

[0027] According to another embodiment of the present invention, a substrate processing facility may include: a chamber having an inner space in which a substrate is processed; and a heat source device installed in the chamber to heat the substrate and provided with at least one of the foregoing features.

[0028] According to another embodiment of the present invention, a substrate processing facility may include: a chamber having an inner space in which a substrate is processed; and a substrate support device installed in the chamber to support the substrate and provided with at least one of the foregoing features.

[0029] A protection member may be further installed in the chamber to surround at least a part of the substrate support device, wherein the protection member may be arranged to be spaced apart from the connection member in a horizontal direction and to overlap a part of the substrate support member in a vertical direction.

[0030] The substrate support member may be entirely disposed at a position lower than the substrate and may be formed to cover at least the connection member.

[0031] [Advantages of the Invention]

[0032] A heat source device according to an embodiment of the present invention may include a support member having grooves with a predetermined pattern such that radiation can be emitted uniformly across the heat source device. Additionally, the grooves may be provided almost continuously along a radial direction of the heat source device or the substrate. Accordingly, a temperature deviation across the substrate may be suppressed during substrate processing and the substrate may be heated uniformly.

[0033] Furthermore, the grooves may be formed as a predetermined pattern in the support member such that heat source devices of various sizes can be easily manufactured. Specifically, a heat source device capable of processing a large-area substrate may be manufactured.

[0034] In addition, various structures installed in the substrate processing space may be inhibited or prevented from overheating due to radiation emitted from the heat source. That is, by changing the configuration of the substrate support device, the structure for supporting the substrate can be prevented from being directly exposed to the radiation. Accordingly, overheating and deformation of the substrate support device caused by the radiation can be suppressed, such that the position of the substrate can be stably maintained during substrate processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 is a cross-sectional view of a substrate processing facility according to an embodiment of the present invention.

[0036] Figure 2 is a cross-sectional view showing in detail a part of a substrate support device according to an embodiment of the present invention.

[0037] Figure 3 is a view showing the flow of a process gas on an upper part of a substrate support member during substrate processing.

[0038] Figure 4 is a schematic view showing a substrate support device according to an embodiment of the present invention.

[0039] Figure 5 It is a view showing a heat source applied to a heat source device according to an embodiment of the present invention.

[0040] Figure 6 It is a bottom view of a heat source device according to an embodiment of the present invention.

[0041] Figure 7 It shows the arrangement of grooves in a heat source device according to an embodiment of the present invention.

[0042] Figure 8 It is for explaining the Figure 7 arrangement of the grooves shown in

[0043] Figure 9 It is a graph showing the distance from the center of a heat source device to the center of each groove in the heat source device according to the prior art.

[0044] Figure 10 It is a graph showing the distance from the center of a heat source device to the center of each groove in the heat source device according to an embodiment of the present invention. Detailed Description of the Invention

[0045] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to these embodiments disclosed below and will be implemented in various forms. Only the embodiments of the present invention are provided to complete the disclosure of the present invention and fully inform those of ordinary skill in the art of the scope of the present invention. The same reference numerals in the drawings refer to the same elements.

[0046] Figure 1 It is a cross-sectional view of a substrate processing facility according to an embodiment of the present invention; Figure 2 It is a cross-sectional view showing in detail a part of a substrate support device according to an embodiment of the present invention; Figure 3 It is a view showing the flow of process gas on the upper part of a substrate support member during substrate processing; Figure 4 It is a schematic view showing a substrate support device according to an embodiment of the present invention; Figure 5 It is a view showing a heat source applied to a heat source device according to an embodiment of the present invention; Figure 6 It is a bottom view of a heat source device according to an embodiment of the present invention;

[0047] Figure 7 It shows the arrangement of grooves in a heat source device according to an embodiment of the present invention; and Figure 8 It is a Figure 7 schematic view for explaining the arrangement of the grooves shown in

[0048] Refer to Figure 1, according to the present invention, a substrate processing facility may include: a chamber 110 having an inner space in which a substrate S is processed; a substrate support device 120 installed in the chamber 110 and configured to support the substrate S; and a heat source device 140 installed in the chamber 110 and configured to heat the substrate S.

[0049] The chamber 110 may be provided with a processing space for processing the substrate S accommodated therein and may be formed in a hollow box shape or a block shape. The chamber 110 may include a chamber body 110a and a light penetrating window 110b, and the light penetrating window 110b is coupled to the chamber body 110a.

[0050] In addition, the chamber body 110a may be formed in a hollow shape with an open top, and the light penetrating window 110b may be coupled to the open top of the chamber body 110a. Although the chamber body 110a may be formed in a one-piece structure, the chamber body 110a may be formed as an assembly of various parts joined or coupled. For the assembly, a sealing means (not shown) may be further provided at the junction between each member. A sealing means (not shown) may also be provided at the junction between the chamber body 110a and the light penetrating window 110b. Therefore, when processing the substrate S, the energy input into the chamber 110 can be reduced.

[0051] The chamber body 110a may be provided with an opening device and a closing device 112 to introduce the substrate S into the chamber 110 or remove the substrate S from the chamber 110. In addition, the chamber body 110a may be provided with a gas injection port 114 for supplying a process gas into the inner space of the chamber 110 and a gas discharge port 116 for discharging the process gas and other gases supplied into the chamber 110. To control the pressure inside the chamber 110, a vacuum line 130 may be connected to the gas discharge port 116 so that the chamber 110 can be evacuated to discharge gas from the chamber 110 and the pressure inside the chamber 110 can be controlled.

[0052] The vacuum line 130 may include an exhaust pipe 132 connected to the gas discharge port 116 and a pump 134 connected to the exhaust pipe 132. In addition, the chamber body 110a may be provided with a cooling line (not shown) to cool the chamber body 110a.

[0053] The substrate support device 120 may be disposed in the chamber 110 to support a substrate S located on the substrate support device 120. Additionally, the substrate support device 120 may rotate the substrate S so that the substrate S can be uniformly processed during substrate processing.

[0054] The substrate support device 120 may include: a rotating member 124 formed in an annular shape; a connecting member 126 formed in an annular shape and installed in an upper portion of the rotating member 124; and a substrate support member 128 formed in an annular shape and installed in an upper portion of the connecting member to extend outward from the connecting member, the substrate support member 128 making local contact with a lower surface of the substrate S.

[0055] The rotating member 124 may be rotatably installed on a bottom inside the chamber 110. Additionally, a rotating member housing 122 may be installed in a lower portion of the rotating member 124 to set a position of the rotating member 124 and prevent the rotating member 124 from disengaging. The rotating member housing 122 may be installed inside the chamber 110 (e.g., on a bottom inside the chamber 110) to support at least a lower portion and an interior of the rotating member 124.

[0056] The rotating member 124 may be formed in an annular shape. More specifically, the rotating member 124 may be formed in a hollow cylindrical form having an open top and bottom. Additionally, the rotating member 124 may be formed as a one-piece structure, or the rotating member 124 may also be formed as an assembly in which at least two parts are joined. For example, the rotating member 124 may include a rotating member body 124a and a friction prevention part 124b connected to a lower portion of the rotating member body 124a. The friction prevention part 124b may be formed at a joint portion of the rotating member 124 and the rotating member housing 122 to inhibit friction between the rotating member 124 and the rotating member housing 122. The friction prevention part 124b may be made of a bearing or the like, and an interior of the friction prevention part 124b may contact and be fixed to the rotating member housing 122, and an exterior of the friction prevention part 124b may be movable. The rotating member 124 may be connected to a driving device (not shown) installed inside or outside the chamber 110 and rotated using power provided by the driving device.

[0057] The connecting member 126 can be installed in the upper portion of the rotating member 124. The connecting member 126 can be formed in a hollow cylindrical form that extends in the vertical direction and has an open top and bottom. The connecting member 126 can be formed to have an outer diameter that is less than or equal to the inner diameter of the rotating member 124 or the inner diameter of the rotating member body 124a. Additionally, the connecting member 126 can be installed in such a manner that the lower portion of the connecting member 126 is partially inserted into the rotating member 124 or the rotating member body 124a. In this case, a step can be formed on the inner wall of the rotating member 124 such that the connecting member 126 can be seated or supported on the top of the step. Since the connecting member 126 can move away from the upper portion of the rotating member 124 during substrate processing due to the rotation of the rotating member 124, the rotating member 124 and the connecting member 126 can be connected to each other using a separate fixing member (not shown). However, the connecting member 126 can be installed in the rotating member 124 in various other ways.

[0058] The substrate support member 128 can be installed in the upper portion of the connecting member 126 to support the substrate S located on the substrate support member 128. The substrate support member 128 can be made of a material having thermal properties equivalent or similar to those of the substrate S, and the substrate support member 128 can be formed to make partial contact with the bottom of the substrate S to uniformly heat the substrate S during substrate processing. That is, in order to uniformly heat the substrate S, it is desirable to minimize the contact area between the substrate S and other structures. In other words, since a temperature deviation occurs between the regions of the substrate S that are in contact with other structures and the regions that are not in contact with other structures, in order to uniformly heat the substrate S, the contact area between the substrate S and other structures should be minimized.

[0059] Additionally, the substrate support member 128 can include: a main body 128a that extends in a direction intersecting the extending direction of the connecting member 126; a support unit 128b that extends in a direction intersecting the extending direction of the main body 128a and is connected to the inside of the main body 128a to support the substrate S; and a seating unit 128c that extends in a direction intersecting the extending direction of the main body 128a and is connected to the lower portion of the main body 128a to be installed in the connecting member 126.

[0060] The main body 128a can be formed in an annular shape, and the upper surface of the main body 128a can be formed as a plane. In this case, the upper surface of the main body 128a can be formed to extend in the extending direction of the substrate S (e.g., the horizontal direction). Additionally, the upper surface can be formed to be horizontal or downwardly inclined from the inside of the main body 128a toward the outside.

[0061] The support unit 128b may be formed inside the main body 128a to extend in a direction intersecting the extending direction of the main body 128a. In addition, the support unit 128b may be formed to protrude upward from the upper surface of the main body 128a such that the substrate S may be supported at a position higher than the upper surface of the main body 128a. The support unit 128b may be formed to be orthogonal to the upper surface of the main body 128a, or the support unit 128b may be formed to be inclined upward. In such a case, the angle between the upper surface of the main body 128a and the outer surface of the support unit 128b may be greater than 90° or less than 180°. The outer surface of the support unit 128b refers to the surface extending from the upper surface of the main body 128a. If the angle is less than 90°, the process gas may be trapped between the main body 128a and the support unit 128b. On the contrary, if the angle (θ) is greater than 180°, the substrate S may not be supported higher than the main body 128a. The support unit 128b may be formed in the lower surface of the substrate S in a line contact or point contact manner. In the former case, the top portion of the support unit 128b in contact with the substrate S may be formed to have the same height along its circumference. In the latter case, the top portion of the support unit 128b in contact with the substrate S may be formed to have different heights along the circumference or have protrusions.

[0062] Referring to Figure 3 In (a) of, in the substrate support member 12 according to the prior art, the support unit 12b for supporting the substrate S is provided at a position lower than the main body 12a. Therefore, the process gas supplied into the chamber does not move smoothly through the main body 12a, and vortices or stagnation are generated in the upper portion of the support unit 12b. In such a case, compared with the central region of the substrate S, the edge region of the substrate S placed on the support unit 12b has a longer contact time with the process gas, and thus there is a problem that the substrate S is not uniformly and completely processed. For example, when forming a thin film on the substrate S, the thickness of the thin film formed in the edge region of the substrate S is larger than the thickness of the thin film formed in the central region of the substrate S.

[0063] On the contrary, in Figure 3 As can be seen in (b) of, when the support unit 128b for supporting the substrate S is provided at a position higher than the main body 128a and the upper surface of the main body 128a is formed as a plane, the process gas supplied into the chamber 110 can move smoothly between the surface of the substrate S and the main body 128a of the substrate support member 128. In addition, the substrate support member 128 may be completely disposed below the substrate S, that is, disposed at a position lower than the substrate S. Thereby, the vortex or stagnation of the process gas between the main body 128a and the support unit 128b can be suppressed. Therefore, the process gas can uniformly contact the substrate S for a predetermined time, and the substrate S can be uniformly and completely processed.

[0064] The substrate support member 128 can be used to prevent the radiation emitted from the heat source device 140 from reaching the connection member 126 and the rotating member 124 mounted below the substrate support member 128 while supporting the substrate (S).

[0065] Referring Figure 4 , the main body 128a can be formed in an annular shape, where the inner diameter (r EI ) of the main body 128a can be smaller than the inner diameter (r SI ) and the outer diameter (r SO ) of the connection member 126, and the outer diameter (r EO ) of the main body 128a can be larger than the outer diameter (r SO ) of the connection member 126. The outer diameter (r EO ) of the main body 128a can be larger than the outer diameter (r SO ) of the connection member 126 and larger than or equal to the outer diameter (r RO ) of the rotating member 124 (r SO < r EO , r RO ≤ r EO ). Additionally, the outer diameter (r ES ) of the placement unit 128c can be larger than the inner diameter (r EI ) of the main body 128a and smaller than the outer diameter (r EO ) of the main body 128a (r EI < r ES < r EO ). With this configuration, the connection member 126 and the rotating member 124 can be covered by a part of the main body 128a, so that the radiation emitted from the heat source device 140 can be prevented from reaching the connection member 126 and the rotating member 124 to overheat the connection member 126 and the rotating member 124.

[0066] Additionally, as can be seen in (b) of Figure 3 , the substrate support member 128 can include a heat insulation layer 129 formed in at least a part (such as the bottom of the main body 128a) of the main body 128a.

[0067] The heat insulation layer 129 can be formed using materials that absorb heat, materials with low thermal conductivity, and similar materials. The heat insulation layer 129 can be formed of materials having good heat resistance and low reactivity with other materials at high temperatures (such as alumina (Al 2 O 3 ), yttrium oxide (Y 2 O 3 ), zirconia (ZrO 2 ) and similar materials). The heat insulation layer 129 can inhibit the transfer of heat from the main body 128a heated by radiation to the lower part of the main body 128a.

[0068] Referring to Figure 1 and Figure 2 , the chamber 110 may be provided with a protection member 118 to protect the substrate support device 120 from radiation during substrate processing. The heat source device 140 is installed in the chamber 110 to irradiate radiation across an area that is almost equal to or larger than the area of the substrate S. Accordingly, the connection member 126 and the rotation member 124 provided on the outer side of the substrate S in the substrate support device 120 may be directly exposed to radiation. Thus, to prevent the connection member 126 and the rotation member 124 from being exposed to radiation, the protection member 118 may be installed on the inner surface of the chamber 110 to cover a part of the substrate support device 120. At this time, since the substrate is rotated by the substrate support device 120 during substrate processing, the protection member 118 must be installed at a distance from the substrate support member 128 and the connection member 126. Accordingly, a space may be formed between the protection member 118 and the substrate support member 128 and between the protection member 118 and the connection member 126. Thus, when the heat source device 140 is operated to process the substrate S, the radiation emitted from the heat source 146 of the heat source device 140 may enter between the protection member 118 and the substrate support member 128 and between the protection member 118 and the connection member 126. To solve this problem, the outer diameter of the substrate support member 128 (e.g., the outer diameter of the main body 128a) may be formed to be larger than the inner diameter of the protection member 118 such that a part of the main body 128a overlaps the protection member 118 in the vertical direction by a desired length L. Thereby, the radiation emitted from the heat source 146 can be prevented from entering between the substrate support member 128 and the protection member 118. In such a case, at least a part of the upper surface of the protection member 118 may be formed to be inclined downward with respect to the substrate support member 128. With this configuration, overheating of the connection member 126 and the rotation member 124 installed under the substrate support member 128 due to radiation can be more effectively suppressed or prevented.

[0069] The heat source device 140 may be installed in the chamber 110 to heat the substrate S supported on the substrate support device 120. The heat source device 140 may include a support part 142 installed in the upper part of the chamber 110 and a plurality of heat sources 146 installed in the support part 142 to heat the substrate S.

[0070] Referring to Figure 5, the heat source 146 may be a bulb-type lamp that emits radiation. The heat source 146 may include a light-transmitting member 146a and a filament 146b. The light-transmitting member 146a has an opening and an inner space formed in at least a part of the light-transmitting member 146a. The filament 146b is installed in the inner space of the light-transmitting member 146a. A connection member 146c including terminals may be provided at the opening of the light-transmitting member 146a to fix the filament 146b and apply power to the filament 146b. When power is applied to the lamp, radiation is emitted from the filament 146b. The light-transmitting member 146a is formed in a hollow cylindrical form. The light-transmitting member 146a may have a circular cross-section in the lateral direction. The filament 146b may be formed in a "-" shape extending horizontally within the light-transmitting member 146a. Therefore, when the heat source 146 is observed from the front, as shown in (a) of Figure 5 , the filament 146b is seen to be arranged in a "-" shape, and when the heat source 146 is observed from the side, as shown in (b) of Figure 5 , the filament 146b is seen to be arranged in the form of a "dot (.)".

[0071] Ideally, all the radiation emitted from the filament 146b is irradiated onto the substrate support device 120 that supports the substrate S. However, since the radiation is emitted radially, a reflector 146d may be formed in a part of the light-transmitting member 146a to collect the radiation emitted toward the opposite side (e.g., the support member 142) of the substrate support device 120 and reflect the radiation toward the substrate support device 120. The reflector 146d may be formed of a metal material (e.g., tungsten, molybdenum, nickel, or gold) having good reflectivity and may be coated on the surface of the light-transmitting member 146a in the form of a thin film. Additionally, the reflector 146d may be formed of a non-metallic material (e.g., ceramic) having good heat resistance and low reactivity with other materials at high temperatures, such that the radiation emitted toward the top of the filament 146b is blocked and the support member 142 or the connection member 146c in the heat source 146 does not overheat.

[0072] The support member 142 may be installed in the upper part of the chamber 110 to heat the substrate S (see Figure 1 ) placed on the substrate support device 120.

[0073] Referring to Figure 6, the support member 142 may be provided with insertion holes 144 for inserting a plurality of heat sources 146. The insertion holes 144 may be formed to penetrate the support member 142 in one direction (e.g., the vertical direction). The support member 142 may be coupled to the socket 143 to supply power to the plurality of heat sources 146. The support member 142 may be formed in a cylindrical shape having a circular cross-section and a desired thickness. However, depending on the shape of the chamber 110 or the substrate S, the support member 142 may be formed in various shapes, such as a polyhedron. Hereinafter, an embodiment in which the support member 142 is formed in a cylindrical shape having a circular cross-section will be described.

[0074] The surface of the support member 142 may be coated with the following fluorine-based polymers having good chemical resistance and heat resistance: for example, polytetrafluoroethylene (PTFE), perfluoro alkoxy (PFA), fluorinated ethylene propylene copolymer (FEP), polyethylene tetrafluoroethylene (ETFE), PCDF, polyvinylidene fluoride (PVDF), polyvinyl fluoride (PVF), polychlorotrifluoroethylene (PCTFE). In addition, a groove 145 may be formed in a lower portion of the insertion hole 144 to collect radiation emitted from the heat source 146. The groove may be formed to communicate with the insertion hole 144. The insertion holes 144 may be formed to be spaced apart from each other, and the groove 145 may be formed to be larger than the diameter of the insertion hole 144 such that the groove 145 may be in partial contact with an adjacent groove 145. Herein, the term "adjacent" means being positioned close to each other or closest to each other. A reflector (not shown) may be formed in the groove 145 to reflect the collected radiation toward the substrate support device 120 (i.e., the substrate S). The reflector may be formed of a metal material having a high reflectivity and heat resistance (e.g., tungsten (W), molybdenum (Mo), nickel (Ni), or gold (Au)). Refer to Figure 6 , when viewed from the bottom of the support member 142, the groove is formed in a circular shape, but the wall surface of the groove 145 may be formed to be inclined or curved in an arc shape.

[0075] The groove 145 may be formed in the support member 142 in a predetermined pattern. The groove 145 may be set to a pattern that may increase the number of heat sources 146 mounted in the support member 142 and uniformly and completely heat the substrate S during the treatment of the substrate S. Refer toFigure 7 The groove 145 can be divided into a first group A and a second group B. The first group A has columns and rows and is arranged to extend in a first direction, and the second group B is arranged to extend in a second direction intersecting the extension direction of the first group A. Hereinafter, the groove 145 in the first group A is referred to as the first groove 145a, and the groove 145 in the second group B is referred to as the second groove 145b. At this time, the first direction means a direction intersecting the extension direction of the insertion hole 144, and the second direction means a direction intersecting the extension direction of the insertion hole 144 and orthogonal to the first direction. For example, the insertion hole 144 can be formed to extend in the vertical direction, where the first direction can extend in the horizontal direction and the second direction can extend in the horizontal direction in a direction orthogonal to the first direction. In addition, the first group A can be formed to extend in the lateral direction and the second group B can be formed to extend in the longitudinal direction. Therefore, the first group A and the second group B can be alternately arranged to form lines in different directions. That is, the first group A can be arranged at intervals to form a line in the first direction, and the second group B can be arranged on at least one side of the first group A to form a line in the second direction. Herein, a line means an imaginary line formed by arranging the first group A or the second group B in one direction, and does not mean a continuously extending line. When the first group A and the second group B are arranged in this way, the first group A and the second group B can exhibit a pattern formed by crossing weft yarns and warp yarns, such as a plain weave structure. That is, alternately arranged weft yarns and warp yarns exist on the surface of a fabric having a plain weave structure, where each weft yarn and each warp yarn form a line extending in one direction.

[0076] The heat source device according to an embodiment of the present invention can have a first group A composed of a plurality of alternately arranged first grooves 145a and a second group B composed of a plurality of second grooves 145b, thereby forming lines similar to the lines formed by weft yarns and warp yarns on the surface of a fabric having a plain weave structure.

[0077] Referring to Figure 8 In (a) of, the first group A can include six first grooves 145a arranged to have three rows and two columns. The six first grooves 145a can be formed to have the same size (e.g., the same diameter r11). First, the three first grooves 145a in the first row can be arranged such that the corresponding centers are positioned on a horizontal line and the corresponding first grooves 145a are in contact with each other. The three first grooves 145a in the second row can be arranged such that the corresponding centers are positioned on a straight line and the corresponding first grooves 145a are in contact with each other. The centers of the first grooves 145a in the first row and the centers of the first grooves 145a in the second row can be arranged to be positioned on a straight line.

[0078] With this configuration, the distances r12 and r13 between the centers of the first grooves 145a adjacent to each other can be equal to the diameter r11 of the first groove 145a (r11 = r12 = r13). Accordingly, the length W1 of the first group A in the first direction can be 1.5 times the length T1 in the second direction (e.g., a direction intersecting the first direction) (W1:T1 = 1.5:1), thereby forming a shape of an approximate rectangular shape.

[0079] Referring to Figure 8 of (b), the second group B may include six second grooves 145b arranged in two columns and three rows. The six second grooves 145b may be formed to have the same size, and the six second grooves 145b may be formed to have the same diameter as the diameter of the first groove 145a. First, two second grooves 145b in the first row may be arranged such that the corresponding centers are positioned on a horizontal line and the corresponding second grooves 145b are in contact with each other. Two second grooves 145b in the second row may be arranged such that the corresponding centers are positioned on a straight line and the corresponding second grooves 145b are in contact with each other. Two second grooves 145b in the third row may be arranged such that the corresponding centers are positioned on a straight line and the corresponding second grooves 145b are in contact with each other. The centers of the second grooves 145b in the first row, the centers of the second grooves 145b in the second row, and the centers of the second grooves 145b in the third row may be arranged to be positioned on a straight line.

[0080] In other words, the first group A includes a plurality of first grooves 145a arranged in three columns and two rows, and the second group B includes a plurality of second grooves 145b arranged in two columns and three rows. In addition, the centers of each of the first grooves 145a and the second grooves 145b in each row are located on a horizontal line, and the distance between the centers of the first grooves 145a adjacent to each other, the distance between the centers of the second grooves 145b adjacent to each other, and the distance between the center of the first groove 145a adjacent to the center of the second groove 145b are the same. In addition, the first group A is provided at the center of the support member 142, and the center of the first groove 145a in one of the first row and second row of the first column, the first row and second row of the third column of the first group A is provided at the center of the support member 142.

[0081] With this configuration, the distances r22 and r23 between the centers of the second grooves 145b adjacent to each other can be equal to the diameter r21 of the second groove 145b (r21 = r22 = r23). Accordingly, the length T2 of the second group B in the second direction can be 1.5 times the length W2 in the first direction (e.g., a direction intersecting the second direction) (W2:T2 = 1.5:1), thereby forming a shape of an approximate rectangular shape.

[0082] In addition, the first group A and the second group B may have further extended columns and rows of the first groove 145a and the second groove 145b, as long as the plurality of grooves 145 can be arranged on the support member 142 in a plain weave structure.

[0083] It has been described herein that the first groove 145a in the first group A and the second groove 145b in the second group B are formed to be in contact with each other. However, the first groove 145a and the second groove 145b may be formed to be spaced apart from each other. In such a case, the distance between the centers of the adjacent first grooves 145a, the distance between the centers of the adjacent second grooves 145b, and the distance between the center of the adjacent first groove 145a and the center of the second groove 145b may be the same, and these distances may be greater than the diameter of the first groove 145a or the diameter of the second groove 145b (r11 < r12 = r13, r21 < r22 = r23). Here, the term "adjacent" means being positioned close to each other or closest to each other. In this way, when the first groove 145a and the second groove 145b are formed to be spaced apart from each other, depending on the distance between the grooves, the first group A may be formed such that the ratio of the length W1 in the first direction to the length T1 in the second direction is about 1.3:1 to 1.7:1 or 1.4:1 to 1.6:1. In addition, the second group B may be formed such that the ratio of the length W2 in the first direction to the length T2 in the second direction is about 1:1.3 to 1:1.7 or 1:1.4 to 1:1.6. That is, the length W1 of the first group A in the first direction is the same as the length W2 of the second group B in the second direction, and the length T1 of the first group A in the second direction is the same as the length T2 of the second group B in the first direction. In addition, the area of the first group A is the same as the area of the second group B.

[0084] As described above, the plurality of grooves 145 may be divided into a first group A and a second group B having a predetermined pattern, and the first group A and the second group B may be alternately formed over the entire support member 142. At this time, the plurality of grooves 145 may be formed in the support member 142 such that the center of a first groove 145a among the first grooves 145a in one of the first row and second row of the first column, the first row and second row of the third column in the first group A is placed at the center C of the support member 142. For example, the first groove 145a in the first row and first column of the first group A may be placed at the center of the support member 142, and the second group B and the first group A may be alternately arranged in the first direction in which the first group A extends. In addition, the second group B and the first group A may be alternately arranged in a second direction (e.g., a direction intersecting the first direction in which the first group A extends). At this time, the center of the second groove 145b in the second row of the second group B may be placed between the first row and the second row of the first group A or at the middle of the length T1 of the first group A in the second direction. Accordingly, the first group A may be surrounded by four second groups B and the second group B may be surrounded by four first groups A.

[0085] The foregoing heat source device 140 may cause the centers of the grooves 145 to be disposed almost continuously in the radial direction of the support member 142 or in the radial direction of the substrate S. In this way, since the centers of the grooves 145 are continuously disposed in the radial direction of the support member 142, the entire substrate S may be uniformly exposed to radiation and uniformly heated by rotating the substrate S during substrate processing.

[0086] In the above, a substrate processing apparatus including a substrate support device 120 and a heat source device 140 has been described. The substrate support device 120 includes a substrate support member 128 mounted in an upper portion of a connection member 126 to extend outward from the connection member 126, and the substrate support member 128 makes local contact with the lower surface of the substrate S. The heat source device 140 includes a plurality of first grooves 145a formed in a support member 142 and a plurality of second grooves 145b formed in the support member 142. The plurality of first grooves 145a are for forming a first group A extending in a first direction intersecting the extending direction of the insertion hole 144, and the plurality of second grooves 145b are for forming a second group B extending in a second direction intersecting the extending direction of the insertion hole 144 and orthogonal to the first direction. However, the substrate processing apparatus may include the above-described substrate support device 120 and heat source device formed in various patterns, or may include the above-described heat source device and substrate support device formed in various shapes. That is, one of the substrate support device 120 and the heat source device 140 may be variously changed as long as the substrate processing apparatus can uniformly heat the substrate while stably supporting the substrate S.

[0087] In the following, in order to verify the performance of the heat source device according to an embodiment of the present invention, the results of comparing the groove arrangement in the heat source device of the present invention with the groove arrangement in the heat source device according to the prior art will be described.

[0088] Figure 9 is a graph showing the distance from the center of the heat source device to the center of each groove in the heat source device according to the prior art, and Figure 10 is a graph showing the distance from the center of the heat source device to the center of each groove in the heat source device according to the present invention. Here, the center of the heat source device may refer to the center of the support member, and the center of the support member may be the same as the center of the substrate placed on the substrate support device.

[0089] Figure 9 (a) of is a view showing an example of a heat source device according to the prior art, in which the heat source device includes a plurality of heat sources radially arranged with respect to the center C of the heat source device. The distance from the center of the heat source device to the center of the groove formed in the support member is measured respectively, and the measured distances are shown as Figure 9 in (b) of. In Figure 9 (b) of, the y-axis refers to the distance of the support member from the center of the support member in the radial direction, and the x-axis refers to the number of grooves formed in the support member. Here, the groove formed in the center C of the support member is set to be numbered 1, and the number of the remaining grooves can be determined arbitrarily. For example, when 400 grooves are formed in the support member, each groove can be numbered from 1 to 400. At this time, among the grooves, there may be a plurality of grooves having the same distance from the center of the support member, but the number of the grooves can be assigned in the order away from the first groove formed in the center C of the support member. As an alternative, the number of the grooves can be assigned when spirally rotating in the direction away from the first groove based on the first groove formed in the center C of the support member. However, the number of the grooves can be assigned in various ways.

[0090] Referring to Figure 9As shown in (b), it can be seen that the centers of the grooves are intermittently arranged along the radial direction of the support member from the center C of the heat source device 140. Specifically, it can be seen that the centers of the grooves are intermittently arranged within a range of about 150 mm from the center of the heat source device (such as the support member), so that a distance is formed between the center of one groove and the center of another groove. In addition, it can be seen that the centers of the grooves are hardly arranged within the range of about 175 mm to 180 mm from the center of the heat source device. In this case, if the substrate is processed while the substrate is rotating, in the region where there is a distance in the radial direction of the heat source device between the centers of the grooves, the substrate is not sufficiently exposed to the radiation emitted from the heat source. Therefore, due to the difference in the amount or intensity of the radiation in the region where the centers of the grooves are arranged and the region where the centers of the grooves are spaced apart, there is a problem that the substrate cannot be heated uniformly.

[0091] Figure 10 (a) is a view showing a heat source device 140 according to the present invention, in which the heat source device includes a plurality of grooves 145 arranged in a pattern having a plain weave structure on a support member 142. The distances from the center C of the heat source device 140 to the centers of the grooves 145 formed in the support member 142 are measured respectively, and the measured distances are shown as Figure 10 shown in (b). In Figure 10 (b), the y-axis refers to the distance from the center of the support member in the radial direction of the support member, and the x-axis refers to the number of grooves formed in the support member. The number of grooves can be determined in the same manner as described above.

[0092] Referring to Figure 10 (b), it can be seen that the centers of the grooves 145 are arranged almost continuously along the radial direction of the support member 142 from the center C of the heat source device 140. However, the centers of the grooves 145 are intermittently arranged within a range of about 75 mm from the center of the heat source device 140. However, since the distance between the center of one groove 145 and the center of another groove 145 is relatively short, and the grooves 145 have corresponding areas, the substrate can be sufficiently heated between the centers of the grooves 145. Specifically, since the substrate S is processed while the substrate S is rotating, the radiation can reach uniformly along the radial direction of the substrate S and the entire substrate S can be heated uniformly.

[0093] Although the present invention has been described with reference to the accompanying drawings and the foregoing preferred embodiments, the present invention is not limited thereto and is only defined by the claims set forth above. Therefore, it should be understood that those of ordinary skill in the art can make various changes and modifications to the present invention without departing from the technical scope of the appended claims.

Claims

1. A heat source device for treating a substrate, comprising: A plurality of heat sources; and A support member provided with an insertion hole and a groove, the insertion hole being formed to extend in one direction to insert the plurality of heat sources, the groove being formed in one side of the insertion hole to collect and reflect radiation emitted from the plurality of heat sources, Wherein the groove includes a plurality of first grooves and a plurality of second grooves, the plurality of first grooves being formed in the support member to form a first group extending in a first direction intersecting the extending direction of the insertion hole, the plurality of second grooves being formed in the support member to form a second group extending in a second direction intersecting the extending direction of the insertion hole and orthogonal to the first direction, Wherein the number of the first grooves in the first group is equal to the number of the second grooves in the second group, Wherein the plurality of first grooves and the plurality of second grooves are formed to have the same diameter, the length of the first group in the first direction is equal to the length of the second group in the second direction, and the length of the first group in the second direction is equal to the length of the second group in the first direction.

2. The heat source device according to claim 1, wherein the first group and the second group are alternately arranged in the first direction and the second direction, and wherein the first group is arranged to be spaced apart to form a line in the first direction, and the second group is arranged in at least one side of the first group to form a line in the second direction.

3. The heat source device according to claim 1, wherein the first group is arranged to be surrounded by the second group, and the second group is arranged to be surrounded by the first group.

4. The heat source device according to claim 1, wherein the first group includes a plurality of first grooves arranged in 3 columns and 2 rows, and the second group includes a plurality of second grooves arranged in 2 columns and 3 rows.

5. The heat source device according to claim 4, wherein the distance between the centers of adjacent first grooves among the plurality of first grooves, the distance between the centers of adjacent second grooves among the plurality of second grooves, and the distance between the center of an adjacent first groove and the center of an adjacent second groove among the plurality of first grooves and the plurality of second grooves can be the same.

6. The heat source device according to claim 5, wherein the first group is arranged in the middle of the support member, and the center of the first groove in one of the first row of the first column, the second row of the first column, the first row of the third column, and the second row of the third column in the first group is arranged at the center of the support member.

7. A substrate processing facility, comprising: A chamber having an inner space for treating a substrate; and The heat source device defined in any one of claims 1 to 6, installed in the chamber to heat the substrate.

8. The substrate processing facility according to claim 7 further includes a substrate support device, which is installed in the chamber to support the substrate.

9. The substrate processing facility according to claim 8, wherein the substrate support device includes: a rotating member formed in an annular shape; a connecting member formed in an annular shape and installed in an upper portion of the rotating member; and a substrate support member formed in an annular shape and installed in an upper portion of the connecting member to extend outward from the connecting member, and the substrate support member is in partial contact with a lower surface of the substrate.

10. The substrate processing facility according to claim 9, wherein the substrate support member is formed to be completely disposed at a position below the lower surface of the substrate.

11. The substrate processing facility according to claim 9, wherein the substrate support member includes: a main body extending in a direction intersecting with an extending direction of the substrate; a support unit capable of contacting the substrate and connected to an upper portion of the main body to extend in a direction intersecting with an extending direction of the main body; and a placement unit capable of contacting the connecting member and connected to a lower portion of the main body to extend in a direction intersecting with an extending direction of the main body, wherein the main body and the placement unit are formed in an annular shape, and an outer diameter of the main body is larger than an outer diameter of the connecting member, and an outer diameter of the placement unit is smaller than the outer diameter of the main body.

12. The substrate processing facility according to claim 11, wherein an upper surface of the main body is formed as a plane.

13. The substrate processing facility according to claim 12, wherein the upper surface of the main body is formed to be inclined downward to the outside.

14. The substrate processing facility according to claim 12, wherein an angle between the support unit and the main body is greater than or equal to 90° and less than 180°.

15. The substrate processing facility according to claim 11, wherein the substrate support member includes a heat insulation layer formed on at least a lower surface of the main body.

16. The substrate processing facility according to claim 9 further includes a protection member installed in the chamber to surround at least a part of the substrate support device, wherein the protection member is disposed to be spaced apart from the connecting member in a horizontal direction and overlap with a part of the substrate support member in a vertical direction.

17. The substrate processing facility according to claim 9, wherein the substrate support member is completely disposed at a position lower than the substrate and is formed to cover at least the connecting member.

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