Light-emitting module and light-emitting device including the same

Abstract

The present invention provides a light-emitting module and a light-emitting device including the light-emitting module. The light-emitting module includes a circuit structure and a plurality of light-emitting units. The circuit structure has a first side and a second side opposite the first side. The circuit structure includes a plurality of first pads disposed on the first side and at least one second pad disposed on the second side. The plurality of first pads are electrically connected to the at least one second pad. The plurality of light-emitting units are electrically connected to the plurality of first pads. The number of the plurality of first pads is greater than the number of the at least one second pad.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to a light-emitting module and a light-emitting device including the same. Background Art

[0002] As the applications of electronic devices continue to expand, display technology is also advancing rapidly. With varying application conditions, the demand for display quality in electronic devices is becoming increasingly stringent, leading to different challenges for electronic devices. Therefore, the research and development of electronic devices requires continuous updates and adjustments. Summary of the Invention

[0003] The present disclosure is directed to a light emitting module that can provide better electrical connection or display quality.

[0004] The present disclosure is directed to a light emitting device having better electrical connection or display quality.

[0005] According to an embodiment of the present disclosure, a light-emitting module includes a circuit structure and a plurality of light-emitting units. The circuit structure has a first side and a second side opposite the first side. The circuit structure includes a plurality of first pads disposed on the first side and at least one second pad disposed on the second side, the plurality of first pads being electrically connected to the at least one second pad. The plurality of light-emitting units are electrically connected to the plurality of first pads. The number of the plurality of first pads is greater than the number of the at least one second pad.

[0006] According to an embodiment of the present disclosure, a light-emitting device includes a driving substrate and a plurality of light-emitting modules. Each of the plurality of light-emitting modules is electrically connected to the driving substrate via at least one second pad.

[0007] Based on the above, in the light-emitting module or light-emitting device including the same according to the disclosed embodiments, since the pads on the second side of the circuit structure can be reconfigured or integrated by redistributing the circuit layer, the number of pads on the second side of the circuit structure can be reduced, thereby reducing the risk of short circuits and the difficulty of bonding the light-emitting module to the driver substrate. This improves the bonding quality between the light-emitting module and the driver substrate, resulting in a light-emitting device with better bonding quality or display quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1A A schematic top view of a light emitting device according to an embodiment of the present disclosure;

[0009] Figure 1B for Figure 1A A cross-sectional view of the light emitting device along the section line AA';

[0010] Figure 1C is a cross-sectional view of a light emitting device according to another embodiment of the present disclosure;

[0011] Figure 2AThis is a schematic top view of a first circuit layer of a light-emitting module according to an embodiment of the present disclosure;

[0012] Figure 2B This is a schematic top view of the second circuit layer of the light-emitting module according to an embodiment of the present disclosure;

[0013] Figure 2C is a schematic top view of the third circuit layer of the light emitting module according to an embodiment of the present disclosure;

[0014] Figure 2D is a bottom view schematically showing a third circuit layer of a light emitting module according to an embodiment of the present disclosure;

[0015] Figure 3A This is a schematic top view of a third circuit layer of a light emitting module according to another embodiment of the present disclosure;

[0016] Figure 3B This is a schematic top view of a third circuit layer of a light emitting module according to another embodiment of the present disclosure;

[0017] Figure 3C This is a schematic top view of a third circuit layer of a light emitting module according to another embodiment of the present disclosure;

[0018] Figure 4 This is a schematic top view of a third circuit layer of a light emitting module according to another embodiment of the present disclosure;

[0019] Figure 5 A bottom view schematically shows a fourth circuit layer of a light-emitting module according to another embodiment of the present disclosure;

[0020] Figure 6A This is a schematic top view of a light emitting module according to another embodiment of the present disclosure;

[0021] Figure 6B for Figure 6A A cross-sectional view of the light emitting module along the section line BB';

[0022] Figure 7A This is a schematic top view of a light emitting module according to another embodiment of the present disclosure;

[0023] Figure 7B for Figure 7A A cross-sectional view of the light emitting module along the section line CC';

[0024] Figure 7C for Figure 7A A cross-sectional view of the light emitting module along the section line DD';

[0025] Figure 7D for Figure 7A A cross-sectional view of the light emitting module along the section line EE';

[0026] Figure 8AThis is a schematic top view of a light emitting module according to another embodiment of the present disclosure;

[0027] Figure 8B for Figure 7A A cross-sectional view of the light emitting module along the section line FF';

[0028] Figure 9A is a schematic top view of one layer of a light emitting module according to another embodiment of the present disclosure;

[0029] Figure 9B A bottom view of a light emitting module according to another embodiment of the present disclosure;

[0030] Figure 10A This is a schematic top view of a light emitting module according to another embodiment of the present disclosure;

[0031] Figure 10B FIG1 is a bottom view of a light emitting module according to another embodiment of the present disclosure. DETAILED DESCRIPTION

[0032] The present disclosure will be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that, for ease of understanding and for the sake of simplicity, many of the drawings in this disclosure depict only portions of electronic devices, and certain components in the drawings are not drawn to scale. Furthermore, the number and dimensions of components in the drawings are for illustrative purposes only and are not intended to limit the scope of this disclosure.

[0033] Throughout this disclosure and the claims that follow, certain words will be used to refer to specific components. It will be understood by those skilled in the art that electronic equipment manufacturers may refer to the same components by different names. This document does not intend to distinguish between components that have the same function but different names. In the following description and claims, words such as "include," "contain," and "have" are open-ended words and should therefore be interpreted as meaning "including but not limited to..." Therefore, when the terms "include," "contain," and / or "have" are used in the description of this disclosure, they specify the presence of corresponding features, regions, steps, operations, and / or components, but do not exclude the presence of one or more corresponding features, regions, steps, operations, and / or components.

[0034] Directional terms used herein, such as "up," "down," "front," "back," "left," "right," etc., are used only with reference to the directions in the accompanying drawings. Therefore, the directional terms used are for illustrative purposes only and are not intended to limit the present disclosure. In the accompanying drawings, each figure illustrates the general characteristics of the methods, structures, and / or materials used in particular embodiments. However, these figures should not be construed as defining or limiting the scope or nature of the embodiments. For example, the relative sizes, thicknesses, and positions of various layers, regions, and / or structures may be reduced or exaggerated for clarity.

[0035] It should be understood that when a component or layer is referred to as being "connected to" another component or layer, it can be directly connected to the other component or layer, or there can be intervening components or layers between the two. When a component is referred to as being "directly connected to" another component or layer, there can be no intervening components or layers between the two. In addition, when a component is referred to as being "coupled to another component (or variations thereof)", it can be directly connected to the other component, or indirectly connected (e.g., electrically connected) to the other component through one or more components.

[0036] The terms "about," "equal to," "equal," or "same," "substantially," or "approximately" are generally interpreted as within 20% of a given value or range, or within 10%, 5%, 3%, 2%, 1% or 0.5% of a given value or range.

[0037] In the present disclosure, a structure (or layer, component, substrate) described as being located on top of another structure (or layer, element, substrate) may refer to the two structures being adjacent and directly connected, or may refer to the two structures being adjacent but not directly connected. Indirect connection means that there is at least one intermediate structure (or intermediate layer, intermediate component, intermediate substrate, intermediate spacer) between the two structures, the lower surface of one structure being adjacent to or directly connected to the upper surface of the intermediate structure, and the upper surface of the other structure being adjacent to or directly connected to the lower surface of the intermediate structure. The intermediate structure may be composed of a single or multiple layer of physical or non-physical structure, without limitation. In the present disclosure, when a structure is disposed "on" another structure, it may refer to the structure being "directly" on the other structure, or it may refer to the structure being "indirectly" on the other structure, i.e., at least one structure is interposed between the structure and the other structure.

[0038] The terms "first," "second," etc., within this disclosure may be used herein to describe various elements, components, regions, layers, and / or portions, but these elements, components, regions, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or portion from another element, component, region, layer, or portion. Therefore, the "first element," "component," "region," "layer," or "portion" discussed below is used to distinguish it from the "second element," "component," "region," "layer," or "portion," and is not used to limit the order or specific elements, components, regions, layers, and / or portions.

[0039] According to the disclosed embodiments, the width, thickness, height, or area of ​​each component, or the distance or spacing between components, can be measured using an optical microscope (OM), a scanning electron microscope (SEM), an α-step thin film thickness profiler, an ellipsometer, or other suitable methods, but are not limited thereto. Specifically, according to some embodiments, a scanning electron microscope can be used to obtain a cross-sectional structural image of the component to be measured, and the width, thickness, height, or area of ​​each component, or the distance or spacing between components, can be measured, and the component volume can be obtained using a suitable method (e.g., integration). In addition, any two values ​​or directions used for comparison may have a certain error.

[0040] An electronic device, such as the light-emitting module or light-emitting device of the embodiment of the present disclosure, may have better bonding quality, wherein the electronic device may include a display device, an antenna device, a sensing device, a splicing device, or a transparent display device, but is not limited thereto. The electronic device may be a rollable, stretchable, bendable, or flexible electronic device. The electronic device may, for example, include liquid crystal, light-emitting diode (LED), quantum dot (QD), fluorescence, phosphorescence, or other suitable materials, and the materials may be arranged and combined in any manner, or other suitable display media, or a combination of the foregoing; the light-emitting diode may, for example, include an organic light-emitting diode (OLED), a millimeter / sub-millimeter light-emitting diode (mini LED), a micro light-emitting diode (micro LED), or a quantum dot light-emitting diode (such as QLED), but is not limited thereto. The antenna device may, for example, be a liquid crystal antenna, but is not limited thereto. The splicing device may, for example, be a display splicing device or an antenna splicing device, but is not limited thereto. It should be noted that the electronic device may be any arrangement or combination of the foregoing, but is not limited thereto. Furthermore, the electronic device may have a rectangular, circular, polygonal shape, a curved edge, or other suitable shape. The electronic device may include peripheral systems such as a drive system, a control system, a light source system, a rack system, etc. to support a display device, an antenna device, or a splicing device. The following description of this disclosure uses a light-emitting module or light-emitting device as the electronic device, but the disclosure is not limited thereto.

[0041] It should be noted that the following embodiments may be implemented by replacing, recombining, or combining features from several different embodiments to create other embodiments without departing from the spirit of the present disclosure. Features from various embodiments may be mixed and matched as long as they do not violate the spirit of the invention or conflict with each other.

[0042] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0043] Figure 1A FIG1 is a schematic top view of a light emitting device according to an embodiment of the present disclosure. Figure 1B for Figure 1A A cross-sectional view of the light emitting device along the section line AA'. For the sake of clarity and convenience of illustration, Figure 1A and Figure 1B Some components are omitted. Figure 1A and Figure 1B , the light-emitting device 1 includes a driving substrate SUB and a plurality of light-emitting modules 10 arranged on the driving substrate SUB. In one embodiment, at least one light-emitting module 10 is arranged on the driving substrate SUB. In some embodiments, the plurality of light-emitting modules 10 can be arranged in an array on the X-axis and / or the Y-axis into a plurality of horizontal rows or a plurality of vertical columns. For example, the X-axis is in a direction extending horizontally to the left and right, and the Y-axis is in a direction extending vertically up and down. In some embodiments, the X-axis is perpendicular to the Y-axis, and the Z-axis is perpendicular to the X-axis or the Y-axis. The Z-axis is, for example, the normal direction of the upper surface of the driving substrate SUB or the light-emitting module 10. The light-emitting module 10 of this embodiment can be electrically connected to the driving substrate SUB by being bonded to the driving substrate SUB to emit light and / or display images, so that the light-emitting device 1 has the function of emitting light and / or displaying images.

[0044] Please refer to Figure 1B, the driving substrate SUB of this embodiment is, for example, a substrate including a signal line, and the substrate may include a hard substrate or a flexible substrate. In some embodiments, the material of the hard substrate includes, for example, glass, quartz, ceramics or sapphire, etc., but the present disclosure is not limited thereto. In some embodiments, the flexible substrate may include a suitable flexible material, such as polycarbonate (PC), polyimide (PI), polypropylene (PP) or polyethylene terephthalate (PET), other suitable materials or a combination of the foregoing materials, but is not limited thereto. The material of the signal line arranged on the substrate may be a metal, such as copper, aluminum, titanium, other suitable materials, alloys of the foregoing materials or a combination of the foregoing materials, but is not limited thereto. The driving substrate SUB may also include an insulating layer and be arranged on the signal line and the substrate, wherein a surface of the insulating layer away from the signal line may be the upper surface US of the driving substrate SUB. A plurality of pads PD1, PD2, PD3, or CP may be disposed on the upper surface US of the driver substrate SUB to electrically connect the light-emitting module 10 in subsequent processes. In some embodiments, the driver substrate SUB is, for example, a printed circuit board (PCB) or a chip on film (COF), but is not limited thereto.

[0045] In some embodiments, the light emitting module 10 includes a circuit structure 200 and a plurality of light emitting units 300. The circuit structure 200 can be defined as a structure including at least a circuit, which may include passive components (such as capacitors), active components (such as thin film transistors), or a circuit structure of both, but is not limited thereto. Figure 1B As shown, the circuit structure 200 includes a plurality of pads 2131, 2132, 2133 disposed on a first side 201 of the circuit structure 200 and a plurality of pads 2481, 2482, 2483 disposed on a second side 202 of the circuit structure 200 opposite to the first side 201. The circuit structure 200 also includes a redistribution layer (RDL) disposed between the pads 2131, 2132, 2133 and the pads 2481, 2482, 2483. Figure 1B For example, the redistribution circuit layer RDL includes a stack of three circuit layers CL1, CL2, and CL3, but the number of circuit layers is not limited to Figure 1BThe number of circuit layers shown is limited, and can be increased or decreased, and can be adjusted according to product design requirements. Each circuit layer includes a dielectric layer and a connection circuit. Taking the circuit layer CL1 as an example, the connection circuit includes, for example, a circuit extending on a surface of the dielectric layer 110, a connection portion provided in an opening VA1 penetrating the dielectric layer 110, and a bottom surface provided in the opening VA1 (for example, Figure 1B The top surface of opening VA1 (which is the surface closest to light-emitting unit 300) is connected to pad 2131. In some embodiments, the bottom surface can be defined as the narrowest surface within opening VA1. The top surface of pad 2131 can be flush with the top surface of the dielectric layer of circuit layer CL1, but is not limited thereto. A detailed description of the connection circuit structure will be provided in the following paragraphs.

[0046] In some embodiments, the light-emitting module 10 is, for example, a structure in which a light-emitting unit 300 is first provided. The light-emitting unit 300 is, for example, a light-emitting diode, but is not limited thereto. The light-emitting unit 300 includes a first light-emitting unit 301, a second light-emitting unit 302, and a third light-emitting unit 303. The first light-emitting unit 301, the second light-emitting unit 302, and the third light-emitting unit 303 can, for example, emit the same color of light or different colors of light. For example, the first light-emitting unit 301 can emit red light, the second light-emitting unit 302 can emit green light, and the third light-emitting unit 303 can emit blue light, but is not limited thereto. In other embodiments, the first light-emitting unit 301, the second light-emitting unit 302, and the third light-emitting unit 303 can emit the same color of light. In other embodiments, the light-emitting unit 300 can also include light-emitting units of yellow light, orange light, white light, or other suitable colors.

[0047] Figure 1C This is a cross-sectional view of a light emitting device according to another embodiment of the present disclosure. Figure 1C The light emitting device and Figure 1B The light emitting devices are similar, the difference is Figure 1C The light emitting module 10' of the light emitting device shown is, for example, a structure in which the circuit structure 200 is first set. Figure 1C In the embodiment shown, the redistribution layer RDL of the light emitting module 10' includes a stack of three circuit layers CL1, CL2, and CL3, but the number of circuit layers is not limited to CL1. Figure 1C The number of circuit layers shown is limited, and can be increased or decreased, and can be adjusted according to product design requirements. Each circuit layer includes a dielectric layer and a connection circuit. Taking the circuit layer CL1 as an example, the connection circuit includes, for example, a circuit extending on a surface of the dielectric layer 110, a connection portion provided in an opening VA1 penetrating the dielectric layer 110, and a bottom surface provided in the opening VA1 (for example, Figure 1CThe pad 2131B in the opening VA1 is away from the surface of the light emitting unit 300. In detail, the connection circuit includes a circuit extending on the upper surface of the dielectric layer 110. The circuit may include a pad 2131T located on the upper surface of the dielectric layer 110. In some embodiments, the circuit may also extend on the lower surface of the dielectric layer 110. This structure can refer to Figure 1B Configuration method.

[0048] The connection circuit (including the pad 2131T) can be connected to the connection portion 2131C disposed within the opening VA1 to penetrate the dielectric layer 110. The connection portion 2131C can be connected to the pad 2131B located on the bottom surface within the opening VA1. From another perspective, the pad 2131B can be the surface of the connection portion 2131C with the narrowest width within the opening VA1, but the present invention is not limited thereto.

[0049] The connection circuit of circuit layer CL2 includes a circuit disposed on the top surface of the dielectric layer, and includes pads 2281T. Pads 2131B of circuit layer CL1 are disposed on pads 2281T of circuit layer CL2, and pads 2131B are electrically connected to pads 2281T. The connection circuit of circuit layer CL2 also includes a connection portion 2281C disposed within opening VA2, and pads 2281B located on the bottom surface within opening VA2. Connection portion 2281C extends through the dielectric layer, and pads 2281B may be the surface of connection portion 2281C where the width is narrowest within opening VA2, but this is not a limitation.

[0050] The connection circuitry of circuit layer CL3 includes a circuit disposed on the top surface of the dielectric layer, including pads 2481T. Pads 2281B of circuit layer CL2 are disposed on pads 2481T of circuit layer CL3 and are electrically connected to pads 2481T. The connection circuitry of circuit layer CL3 also includes a connection portion 2481C disposed within opening VA3 and pads 2481B located on the bottom surface within opening VA3. Connection portion 2481C extends through the dielectric layer, and pads 2481B may be, but are not limited to, the surface of connection portion 2481C where it is narrowest within opening VA3.

[0051] In some embodiments, the pads 2481B may be electrically connected to the pads 2481 located on the second side 202 , but the present invention is not limited thereto. In other embodiments, the pads 2481B may be exposed on the second side 202 and flush with the second side 202 .

[0052] In some embodiments, the light-emitting module 10' further includes an encapsulation layer 191 or an encapsulation layer 192. The encapsulation layer 191 or the encapsulation layer 192 is disposed on the first side 201 and respectively encapsulates the light-emitting unit 300. The material of the encapsulation layer 191 or the encapsulation layer 192 includes, but is not limited to, optical adhesive, film plastic material (e.g., polyvinyl chloride (PVC)), epoxy resin, or other transparent materials. The encapsulation layer 191 can be a rectangular cube with a substantially flat top surface. It can also be a substantially curved hemisphere like the encapsulation layer 192, but is not limited to this.

[0053] Please refer to Figure 1B and Figure 1C The circuit structure 200 of the light-emitting module 10 or the light-emitting module 10' of this embodiment includes a redistribution circuit layer RDL, pads 2131, 2132, and 2133 arranged on the upper surface of the redistribution circuit layer RDL (which can be defined as the first side 201 of the circuit structure 200, which is the uppermost surface of the light-emitting module 10 or the light-emitting module 10' as a whole connected to the light-emitting unit 300), and pads 2481, 2482, 2483, and 242 arranged on the lower surface of the redistribution circuit layer RDL (which can be defined as the second side 202 of the circuit structure 200, which is the lowermost surface of the light-emitting module 10 or the light-emitting module 10' as a whole connected to the drive substrate SUB). The light-emitting unit 300 is arranged on the pads 2131, 2132, and 2133 on the first side 201 of the circuit structure 200. The pads 2481, 2482, 2483, and 242 on the second side 202 of the circuit structure 200 can be electrically connected to the driver substrate SUB via pads PD1, PD2, PD3, or CP. For example, signals from the driver substrate SUB can be transmitted to the circuit structure 200. In this embodiment, because the dispersion between the pads 2481, 2482, 2483, and 242 on the second side 202 of the circuit structure 200 can be greater than the dispersion between the pads 2131, 2132, and 2133 on the first side 201 of the circuit structure 200, the distances between the pads 2481, 2482, 2483, and 242 on the second side 202 can be more evenly distributed, reducing the risk of short circuits or the difficulty of bonding to the driver substrate. Furthermore, the distances between the pads 2481, 2482, 2483, and 242 on the second side 202 can be increased. Furthermore, since the pads 2481, 2482, 2483, and 242 on the second side 202 of the circuit structure 200 can be reconfigured or integrated using a redistribution layer (RDL), the number of pads on the second side 202 of the circuit structure 200 can be reduced. This improves the bonding quality between the light-emitting module 10 or light-emitting module 10' and the driver substrate SUB. The light-emitting device 1 can thus exhibit better bonding quality or display quality.

[0054] Figure 2AFIG1 is a schematic top view of a first circuit layer of a light emitting module according to an embodiment of the present disclosure. Figure 2B FIG1 is a schematic top view of the second circuit layer of the light emitting module according to an embodiment of the present disclosure. Figure 2C FIG. 1 is a schematic top view of a third circuit layer of a light emitting module according to an embodiment of the present disclosure. Figure 2D This is a bottom view of the third circuit layer of the light emitting module according to an embodiment of the present disclosure. Figures 2A to 2D Some components are omitted. Figure 1B 、 Figure 1C and Figure 2A The circuit structure 200 of the light emitting module 10 includes a redistribution layer RDL. The redistribution layer RDL includes multiple circuit layers. Figure 2A What is shown is, for example, the upper surface 111 of the first circuit layer CL1 on the top of the redistribution circuit layer RDL, that is, the first side 201 of the circuit structure 200. The first circuit layer CL1 includes, for example, a dielectric layer 110 and a connecting circuit. The material of the dielectric layer 110 may be an organic insulating layer, including resin, epoxy, silicone, polydimethylsiloxane (PDMS), polyvinyl ester, polyvinyl ester or polychloroprene or other suitable materials, but not limited thereto. Under the above-mentioned setting, the thickness range of the dielectric layer 110 includes 0.1 microns to 10 microns, but not limited thereto. In other embodiments, the material of the dielectric layer 110 may be an inorganic insulating layer, including silicon oxide (SiO x ), silicon nitride (SiN x ) or aluminum oxide (AlO x ) or other suitable materials, but not limited thereto. Under the above-mentioned setting, the thickness range of the dielectric layer 110 includes 100 angstroms Up to, but not limited to, 5000 angstroms.

[0055] The circuit structure 200 includes a plurality of first pads 2121, 2122, and 2123 disposed on the upper surface 111 of the first circuit layer CL1, i.e., the first side 201 of the circuit structure 200. The circuit structure 200 also includes a plurality of third pads 2131, 2132, and 2133 disposed on the upper surface 111 of the first circuit layer CL1. The first pads 2121, 2122, and 2123 can be disposed correspondingly to the third pads 2131, 2132, and 2133, respectively. For example, the first pads 2121 and the third pads 2131 can be disposed in pairs. The first pads 2122 and 2123 can also be disposed in pairs with the third pads 2132 and 2133, respectively. Taking a pair of pads formed by the first pad 2121 and the third pad 2131 as an example, the first pad 2121 and the third pad 2131 can be connected to the first light-emitting unit 301 of the light-emitting unit 300, respectively. The first pad 2121 can be connected to the cathode (N pole) of the first light-emitting unit 301 as a reference electrode. The third pad 2131 can be connected to the anode (P pole) of the first light-emitting unit 301 as a driving electrode. The above configuration is only for illustration. In other embodiments, the first pad 2121 can be connected to the anode of the first light-emitting unit 301, or the third pad 2131 can be connected to the cathode of the first light-emitting unit 301. In addition, the anode of the first light-emitting unit 301 can be used as a reference electrode, and the cathode can be used as a driving electrode. That is to say, one of the two electrodes of the first light-emitting unit 301 can be a reference electrode, and the other can be a driving electrode, without limitation.

[0056] The second light-emitting unit 302 is electrically connected to the first pad 2122 and the third pad 2132 respectively. The third light-emitting unit 303 is electrically connected to the first pad 2123 and the third pad 2133 respectively. The first pads 2121, 2122, and 2123 can be connected to each other or can be electrically connected to the node C11 through the line 214. The node C11 is, for example, a part of the connection circuit of the first circuit layer CL1. The node C11 includes, for example, a circuit extending on the upper surface 111 (including an upper pad located on the upper surface 111) and a connecting portion arranged in a through hole passing through the dielectric layer 110, and the connecting portion on the bottom surface of the through hole can be applied as a lower pad. In other words, the node C11 may include an upper pad on the dielectric layer 110, a lower pad under the dielectric layer 110, and a connecting portion connecting the upper pad and the lower pad. In the present disclosure, a pad can be defined as a portion of a connection circuit, a conductive through hole, or a node that is suitable for contacting other external components or circuits. For example, the first pads 2121, 2122, and 2123 can be considered as pad portions of the circuit 214 for connecting to external components, such as the light emitting unit 300. In addition, the upper pad of the node C11 can be connected to the circuit 214. In some embodiments, the connection portion of the node C11 can penetrate the dielectric layer 110, and the first pads 2121, 2122, and 2123 are integrated into the node C11 through the circuit 214 to connect to the second circuit layer CL2 (at the bottom of the circuit layer CL1) below the first circuit layer CL1. Figure 2B In the above configuration, the first pads 2121 , 2122 , and 2123 can be adapted to be connected to a common voltage, and the number of pads can be reduced by integrating the plurality of pads into the node C11 .

[0057] In some embodiments, the third pads 2131, 2132, 2133 can be connected to the conductive vias V1, V2, V3 respectively through the line 214. Similar to the node C11, the conductive vias V1, V2, V3 may include an upper pad on the dielectric layer 110, a lower pad under the dielectric layer 110, and a connecting portion connecting the upper pad and the lower pad, so they are not repeated here. The third pads 2131, 2132, 2133 can be connected to the upper pads of the conductive vias V1, V2, V3 respectively through multiple lines 214. The connecting portions of the conductive vias V1, V2, V3 pass through the dielectric layer 110 on the Z axis to connect the third pads 2131, 2132, 2133 from the upper surface 111 to the second circuit layer CL2 under the first circuit layer CL1 (at Figure 2B In the above configuration, the third pads 2131 , 2132 , and 2133 may be adapted to be connected to a driving voltage to drive the light emitting unit 300 to emit light or display an image.

[0058] In some embodiments, the third pads 2131, 2132, and 2133 may have a width W2 along the X-axis. Width is defined as the maximum length of a component along the X-axis. For example, width W2 is the maximum length of the third pad 2131 along the X-axis. Conductive vias V1, V2, and V3 may have a width along the X-axis. The width W2 of the third pads 2131, 2132, and 2133 may be substantially the same as the width of conductive vias V1, V2, and V3, but is not limited thereto. In some embodiments, the widths of conductive vias V1, V2, and V3 may be greater than or less than the width W2 of the third pads 2131, 2132, and 2133.

[0059] Please refer to Figure 2A and Figure 2B , Figure 2B The figure shows the upper surface 121 of the second circuit layer CL2. The upper surface 121 is arranged adjacent to the lower surface of the first circuit layer CL1. The second circuit layer CL2 includes multiple transmission nodes TN2, a node C21, a circuit 226, and conductive vias V1, V2, and V3 that pass through the dielectric layer 120. In some embodiments, the transmission node TN2 can be a pad of the circuit 226, which can be arranged corresponding to the node C11 that passes through the first circuit layer CL1, and the transmission node TN2 is electrically connected to the lower pad of the node C11. Multiple transmission nodes TN2 can be connected to each other through the circuit 226, or integrated into the node C21. Similar to the node C11, the node C21 may include an upper pad on the dielectric layer 120, a lower pad below the dielectric layer 120, and a connecting portion connecting the upper pad and the lower pad, and the connecting portion passes through the dielectric layer 120, so it is not further described. Under the above configuration, multiple transmission nodes TN2 can be integrated into the node C21. In other words, multiple nodes C11 of the first circuit layer CL1 are integrated into node C21 through the transmission node TN2 and the line 226, and the number of nodes C11 can be greater than the number of nodes C21. In addition, the number of first pads 2121, 2122, and 2123 can be greater than the number of nodes C11. In this way, the circuit structure 200 integrates the first pads 2121, 2122, and 2123 into node C21 by reconfiguring and / or integrating the nodes or transmission nodes of the circuit layers (e.g., the first circuit layer CL1 and the second circuit layer CL2) in the redistribution circuit layer RDL, thereby reducing the number of first pads 2121, 2122, and 2123 (e.g., 48) to the number of nodes C21 (e.g., 2). Therefore, the light-emitting module 10 can reduce the number of pads by redistributing the circuit layers of the circuit structure 200, thereby reducing the risk of short circuits or reducing the difficulty of bonding with the driver substrate.

[0060] Please refer to Figure 1B 、 Figure 1C 、 Figure 2B and Figure 2C , Figure 2CThe diagram shows upper surface 131 of third wiring layer CL3, which faces the lower surface of second wiring layer CL2. In some embodiments, upper surface 131 of third wiring layer CL3 contacts the lower surface of second wiring layer CL2. Third wiring layer CL3 includes dielectric layer 130, wiring 234 and 236 and transmission node TN3 disposed on upper surface 131, and nodes 2381, 2382, 2383 and node C31 extending through dielectric layer 130.

[0061] In some embodiments, conductive vias V1, V2, and V3 may penetrate dielectric layer 110 or dielectric layer 120, and the bottom surfaces (i.e., lower pads) of conductive vias V1, V2, and V3 are exposed by the lower surface of dielectric layer 110 or dielectric layer 120. A plurality of pads P1, P2, and P3 are disposed on upper surface 131 and electrically connected to the bottom surfaces of conductive vias V1, V2, and V3, respectively. Pads P1, P2, and P3 may be electrically connected to nodes 2381, 2382, and 2383, respectively, via circuit 234. Similar to the connection circuits or nodes of first circuit layer CL1 or second circuit layer CL2, pads P1, P2, and P3 may be pad portions of circuit 234. The nodes 2381, 2382, and 2383 may include an upper pad on the dielectric layer 130, a lower pad under the dielectric layer 130, and a connecting portion connecting the upper pad and the lower pad, and the connecting portion passes through the dielectric layer 130, so it is not described in detail. Figure 2C As shown, multiple nodes 2381, 2382, 2383 can be arranged in an array along the X-axis and the Y-axis. For example, multiple nodes 2381 can be arranged in a row along the Y-axis. Multiple nodes 2382 can be arranged in a row along the Y-axis and separated from multiple nodes 2381. The row of nodes 2382 and 2383 can be arranged on one side of the node 2381 on the X-axis. The pattern of the line 234 connecting the pads P1, P2, P3 and the nodes 2381, 2382, 2383 is not as shown in FIG. Figure 2CThe diagram is limited. In some embodiments, pad P1 can be connected to a driving voltage for driving first light-emitting unit 301, pad P2 can be connected to a driving voltage for driving second light-emitting unit 302, and pad P3 can be connected to a driving voltage for driving third light-emitting unit 303. Under the above configuration, third pads 2131, 2132, and 2133 can be reconfigured in the redistribution layer (RDL) via pads P1, P2, and P3, conductive vias V1, V2, and V3, line 234, and nodes 2381, 2382, and 2383. The above reconfiguration is defined as the conductive vias V1, V2, V3 (corresponding to the pads P1, P2, P3) and the nodes 2381, 2382, 2383 may not overlap, the third pads 2131, 2132, 2133 and the nodes 2381, 2382, 2383 may not overlap, and the number of third pads 2131, 2132, 2133, the number of conductive vias V1, V2, V3, the number of pads P1, P2, P3 and the number of nodes 2381, 2382, 2383 may be the same, but not limited to this.

[0062] In this way, the distances between nodes 2381, 2382, and 2383 (and the pads connected to them on the second side 202) can be evenly distributed. This improves the dispersion between the pads, increases the distance between the pads, reduces the risk of short circuits, and reduces the difficulty of bonding with the driver substrate. This improves the bonding quality between the light-emitting module 10 or light-emitting module 10' and the driver substrate SUB. The light-emitting device 1 can thus have better bonding quality or display quality.

[0063] In some embodiments, the transmission node TN3 disposed on the upper surface 131 is, for example, a pad disposed corresponding to the bottom surface of the node C21 exposed on the lower surface of the second circuit layer CL2. The transmission node TN3 can be electrically connected to the bottom surface of the node C21. The transmission node TN3 can be electrically connected to the node C31 via a line 236. Similar to node C21, node C31 may include an upper pad on the dielectric layer 130, a lower pad below the dielectric layer 130, and a connection portion connecting the upper and lower pads. The connection portion passes through the dielectric layer 130 and is not further described. Under the above configuration, multiple transmission nodes TN3 can be integrated into node C31 and connected to the other side of the third circuit layer CL3 via the connection portion of node C31. The number of first pads 2121, 2122, and 2123 is greater than the number of nodes C11, greater than the number of nodes C21, and greater than the number of nodes C31. Thus, the circuit structure 200 further reconfigures and / or integrates the nodes or transmission nodes of the circuit layer in the redistribution layer RDL, thereby integrating the first pads 2121, 2122, and 2123 into node C31. This further reduces the number of first pads 2121, 2122, and 2123 to the number of nodes C31 (e.g., one). Therefore, the redistribution of the circuit layer in the circuit structure 200 effectively reduces the number of pads, thereby reducing the risk of short circuits and lowering the difficulty of bonding to the driver substrate.

[0064] In some embodiments, the arrangement of nodes 2381, 2382, 2383 and pads P1, P2, and P3 is not limited. On the Z-axis, nodes 2381, 2382, and 2383 do not overlap with conductive vias V1, V2, and V3 or pads P1, P2, and P3. Transmission node TN3 does not overlap with nodes 2381, 2382, and 2383 on the Z-axis. Node C31 does not overlap with nodes 2381, 2382, and 2383.

[0065] Please refer to Figure 2C and Figure 2D , Figure 2D The bottom surface 132 of the third circuit layer CL3 is shown, which is the second side 202 of the circuit structure 200. In some embodiments, as shown in FIG. Figure 1B or Figure 1C As shown, it faces the upper surface US of the drive substrate SUB. The lower surface 132 of the third circuit layer CL2 contacts the lower surface of the second circuit layer CL2. The connection circuit includes pads 2481, 2482, and 2483, for example.

[0066] In some embodiments, Figure 2D The bottom surface of the connection structure is marked, that is, the fourth pads 2481, 2482, 2483 on the second side 202 (eg Figure 1B or Figure 1CAs shown). The lower pad of node C31 may be located on the lower surface 132 of the third circuit layer CL3, that is, the second side 202 of the circuit structure 200 and is the second pad 242. In some embodiments, the width W6 of the second pad 242 may be the same as or different from the widths of the fourth pads 2481, 2482, and 2483. For example, Figure 2D The width W6 of the second pad 242 in the X direction may be greater than the width of the fourth pad 2481, 2482 or 2483 in the X direction, but is not limited thereto. In other embodiments, the width W6 of the second pad 242 in the X direction may be equal to or less than the width of the fourth pad 2481, 2482 or 2483 in the X direction. In some embodiments, as Figure 2D The area of ​​the second pad 242 on the lower surface 132 of the light emitting module 10 is larger than Figure 2A The area of ​​one of the first pads 2121 , 2122 , and 2123 is shown.

[0067] In some embodiments, fourth pads 2481, 2482, and 2483 on second side 202 can penetrate a redistribution layer (RDL) comprising multiple wiring layers via nodes 2381, 2382, and 2383 and conductive vias V1, V2, and V3 to electrically connect to third pads 2131, 2132, and 2133 on first side 201. Under the aforementioned configuration, third pads 2131, 2132, and 2133 are electrically connected to corresponding fourth pads 2481, 2482, and 2483 through wiring reconfiguration or integration within the RDL. Consequently, the number of third pads 2131, 2132, and 2133 is equal to the number of fourth pads 2481, 2482, and 2483. Thus, the fourth pads 2481, 2482, 2483 and the second pad 242 can serve as pads on the lower surface of the light emitting module 10 to receive the driving substrate SUB (shown in FIG. Figure 1A and Figure 1B ) of the pads PD1, PD2, PD3, and CP. The driving signal can be transmitted through the fourth pads 2481, 2482, and 2483, the second pad 242, and the redistribution layer RDL to the third pads 2131, 2132, and 2133, the first pads 2121, 2122, and 2123, and the light-emitting unit 300 connected thereto. In this way, the light-emitting unit 300 can emit light or generate a display image after receiving the driving signal.

[0068] In some embodiments, the pad on the bottom surface of the node C31 may be provided corresponding to the second pad 242. In other embodiments, the bottom surface of the node C31 may serve as the second pad 242, but is not limited thereto. The second pad 242 on the second side 202 may be reconfigured or integrated through the connection lines in the redistribution layer RDL to electrically connect the first pads 2121, 2122, 2123 located on the first side 201. The redistribution layer RDL is provided between the first pads 2121, 2122, 2123 and the second pad 242. Since the first pads 2121, 2122, 2123 may be reconfigured or integrated through the connection lines in the redistribution layer RDL, the number of the first pads 2121, 2122, 2123 may be greater than the number of the second pads 242.

[0069] It is worth noting that since the number of first pads 2121, 2122, and 2123 can be reduced after reconfiguration or circuit integration, the number of second pads 242 disposed on the second side 202 can be smaller than the number of first pads 2121, 2122, and 2123. Furthermore, the number of transmission nodes TN2 and TN3, which are used to integrate the first pads 2121, 2122, and 2123, is smaller than the number of first pads 2121, 2122, and 2123, but greater than the number of second pads 242. Furthermore, taking the transmission node TN2 as an example, the width of the transmission node TN2 in the X-direction can be greater than the width of one of the first pads 2121, 2122, and 2123 in the same X-direction, and smaller than the width of the second pad 242 in the same X-direction, but the present invention is not limited thereto. Furthermore, the third pads 2131, 2132, 2133 on the first side 201 can be reconfigured as the fourth pads 2481, 2482, 2483 on the second side 202. This reduces the total number of pads on the second side 202, and increases the dispersion between the second pads 242 and the fourth pads 2481, 2482, 2483 compared to the dispersion between the first pads 2121, 2122, 2123 and the third pads 2131, 2132, 2133 on the first side 201 of the circuit structure 200. This allows for a more even distribution of the pads on the second side 202, reducing the risk of short circuits and lowering the difficulty of bonding to the driver substrate. Furthermore, the distance between the pads on the second side 202 (including the fourth pads 2481, 2482, 2483 and the second pad 242) can be increased. Furthermore, because the pads on the second side 202 of the circuit structure 200 can be reconfigured or integrated using a redistribution layer (RDL), the number of pads on the second side 202 of the circuit structure 200 can be reduced. This improves the bonding quality between the light-emitting module 10 or light-emitting module 10' and the driver substrate SUB. Consequently, the light-emitting device 1 can have better bonding quality or display quality.

[0070] In some embodiments, the first pads 2121, 2122, 2123 and the second pad 242 can be configured to receive a common voltage, but the present invention is not limited thereto. In other embodiments, the first pads 2121, 2122, 2123 and the second pad 242 can also receive a driving voltage. In some embodiments, the common voltage or the driving voltage can be a DC voltage or an AC voltage, but the present invention is not limited thereto. The second pad 242 serves as a pad on the lower surface of the light emitting module 10 to receive the driving substrate SUB (shown in FIG. 1 ). Figure 1A and Figure 1B ) of the pad CP. In other words, each light-emitting module 10 is electrically connected to the driving substrate SUB through the second pad 242. The common voltage signal can be transmitted to the first pads 2121, 2122, 2123 and the light-emitting unit 300 connected thereto through the second pad 242 and the redistribution layer RDL. In this way, the number of first pads 2121, 2122, 2123 connected to the common signal can be reduced, the risk of short circuit can be reduced, or the difficulty of bonding with the driving substrate can be reduced. The bonding quality between the light-emitting module 10 or the light-emitting module 10' and the driving substrate SUB can be improved. The light-emitting device 1 can have better bonding quality or display quality.

[0071] The following examples illustrate the present invention. It should be noted that the following examples share the same component numbers and some of the content as the previous examples, with the same numbers used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, please refer to the previous examples, and the following examples will not be repeated.

[0072] Figure 3A This is a top view of the third circuit layer of the light emitting module of another embodiment of the present disclosure. The third circuit layer of this embodiment is substantially similar to Figure 2C Therefore, the same and similar components in the two embodiments will not be repeated here. Figure 3A and Figure 2C The main difference in the embodiment shown is that the node C31 may correspond to Figure 2A and Figure 2BThe node C11 and the transmission node TN2 are set. The connection portion of the node C11 can pass through the dielectric layer 110 to electrically connect the lower pad on the bottom surface to the upper pad of the transmission node TN2 on the dielectric layer 120. The connection portion of the transmission node TN2 then passes through the dielectric layer 120 and is electrically connected to the upper pad of the node C31 of the third circuit layer CL3. By analogy, the present embodiment can perform circuit reconfiguration or circuit integration through the bottom layer of the redistribution layer RDL (for example, the third circuit layer CL3). In addition, the area of ​​the node C31 can be larger than the area of ​​the first pads 2121, 2122, 2123, the conductive vias V1, V2, V3 or the nodes 2381, 2382, 2383, but is not limited thereto. In addition, the nodes 2381, 2382, 2383 can also be through holes that pass through the redistribution layer RDL and are on the lower surface 132 of the third circuit layer CL3 (please refer to Figure 2D ) correspond to the positions of the fourth pads 2481, 2482, and 2483. Thus, the circuit structure of this embodiment can achieve the same technical effect as the above-mentioned embodiment.

[0073] Figure 3B This is a top view of the third circuit layer of the light emitting module of another embodiment of the present disclosure. The third circuit layer of this embodiment is substantially similar to Figure 2C Therefore, the same and similar components in the two embodiments will not be repeated here. Figure 3B and Figure 2C The main difference in the embodiment shown is that the nodes 2381, 2382, 2383 are respectively arranged adjacent to the corresponding pads P1, P2, P3. The nodes 2381, 2382, 2383 are respectively electrically connected to the pads P1, P2, P3 through the line 234. After the nodes 2381, 2382, 2383 pass through the dielectric layer 130, they can be reconfigured or integrated through the connecting lines of other circuit layers. In other words, the light-emitting module of this embodiment rearranges the nodes in layers by redistributing the multiple circuit layers in the circuit layer RDL, so as to gradually configure the third pads 2131, 2132, 2133 as follows. Figure 2D The positions of the fourth pads 2481, 2482, 2483 are shown. In this way, the nodes 2381, 2382, 2383 of the third circuit layer CL3 may not overlap or correspond to the positions of the fourth pads 2481, 2482, 2483. In addition, the node C31 may not pass through the entire redistribution circuit layer RD, but after passing through the dielectric layer 130, it may be reconfigured or integrated through the connection circuits of other circuit layers to be configured as follows: Figure 2D The position of the second pad 242 is shown.

[0074] Figure 3CThis is a top view of the third circuit layer of the light emitting module of another embodiment of the present disclosure. The third circuit layer of this embodiment is substantially similar to Figure 2C Therefore, the same and similar components in the two embodiments will not be repeated here. Figure 3C and Figure 2C The main difference in the illustrated embodiments is that multiple small-area transmission nodes can be merged into a large-area transmission node, or the areas of the transmission nodes on the same circuit layer can be different. For example, the transmission node TN3 can be electrically connected to the node C31 via the line 226 for circuit reconfiguration or circuit integration. In addition, the area of ​​some transmission nodes TN3' can be larger than the area of ​​the transmission node TN3. For example, the area of ​​the transmission node TN3' can be 2 to 10 times the area of ​​the transmission node TN3, but is not limited to this. In some embodiments, multiple nodes C11 and C21 of the first circuit layer CL1 or the second circuit layer CL2 can be electrically connected to the transmission node TN3' after passing through the dielectric layer 110 or the dielectric layer 120. In this way, the large-area transmission node TN3' can integrate multiple nodes C11 and C21, further reducing the number of pads and transmission nodes. The large-area transmission node TN3' can reduce impedance and further improve the electrical quality of the light-emitting module 10.

[0075] Figure 4 This is a top view of the third circuit layer of the light emitting module of another embodiment of the present disclosure. The third circuit layer of this embodiment is substantially similar to Figure 2C Therefore, the same and similar components in the two embodiments will not be repeated here. Figure 4 and Figure 2C The main difference in the embodiment shown is that the third circuit layer can be divided into two sides on opposite sides of the center line M. Figure 4 To the left of the center line M, pad P1 on the third circuit layer CL3 can be connected to the corresponding upper pad of node 2381 via line 234. In this embodiment, only pad P1 can be electrically connected to node 2381 on the third circuit layer CL3 to achieve circuit reconfiguration and / or integration of node 2281. This can reduce signal interference and / or noise, thereby improving electrical quality. Node 2382 or node 2383 can then be reconfigured and / or integrated on other circuit layers (e.g., the fourth or fifth circuit layers, respectively).

[0076] exist Figure 4To the right of the center line M, the third circuit layer CL3 can selectively configure nodes 2381, 2382, and 2383 and electrically connect them to pads P1, P2, and P3, respectively. For example, pad P2 can be electrically connected to node 2382 via line 234. The pads adjacent to pad P2 on the Y-axis do not undergo circuit reconfiguration and / or integration first. Instead, after being separated by a pad P3 on the Y-axis, pad P1 can be electrically connected to node 2381 via line 234. Then, after being separated by another pad P2 on the Y-axis, pad P3 can be electrically connected to node 2383 via line 234. In other words, every two electrically connected pads are separated by a pad that is not electrically connected. In this way, the number of nodes or lines that undergo circuit reconfiguration and / or integration can be reduced, thereby reducing signal interference and / or noise, and improving electrical quality. In addition, the light-emitting module of this embodiment can achieve the same technical effects as the aforementioned embodiments.

[0077] Figure 5 This is a bottom view of the third circuit layer of the light emitting module of another embodiment of the present disclosure. The third circuit layer of this embodiment is substantially similar to Figure 2D Therefore, the same and similar components in the two embodiments will not be repeated here. Figure 5 and Figure 2D The main difference in the embodiment shown is that Figure 5 The figure shows the lower surface 132 of the third circuit layer CL3 (ie, the second side of the entire light emitting module 10"). In this embodiment, the areas of the fourth pads 2481', 2482', 2483' on the lower surface 132 of the light emitting module 10" are larger than Figure 2A In some embodiments, the third pads 2131, 2132, 2133 and other nodes in the redistribution layer RDL (for example: Figure 2C The areas of the nodes 2381, 2382, and 2383 of the third wiring layer CL3 shown can be the same, but the areas of the fourth pads 2481', 2482', and 2483' of the third wiring layer CL3 can be increased. In other embodiments, the areas of the nodes of different wiring layers in the redistribution layer RDL can be gradually increased. For example, the areas of the nodes 2381, 2382, and 2383 of the third wiring layer CL3 can be larger than the areas of the third pads 2131, 2132, and 2133, while the areas of the fourth pads 2481', 2482', and 2483' can be larger than the areas of the nodes 2381, 2382, and 2383 or larger than the areas of the third pads 2131, 2132, and 2133, but are not limited to this. Since the circuit structure of the light emitting module 10 ″ can reduce the number of pads, reduce the risk of short circuit, increase the pad area or reduce the difficulty of bonding with the driving substrate SUB, the bonding quality of the light emitting module 10 ″ and the driving substrate SUB can be improved.

[0078] In addition, the position of the second pad 242' can be reconfigured to be surrounded by the fourth pads 2481', 2483' and / or 2482'. In addition, the spacing between the second pad 242' and the fourth pads 2481', 2483' and / or 2482' can be roughly the same, or can be evenly dispersed, thereby having a better dispersion. Thereby, the bonding quality between the light-emitting module 10" and the driving substrate SUB can be improved. The definition of dispersion will be explained in the subsequent paragraphs. In addition, the light-emitting module of this embodiment can achieve the same technical effects as the aforementioned embodiment.

[0079] Figure 6A This is a top view of a light emitting module according to another embodiment of the present disclosure. The circuit structure of this embodiment is roughly similar to Figure 2A Therefore, the same and similar components in the two embodiments will not be repeated here. Figure 6A The light emitting module 10 shown is, for example, a structure in which a circuit structure is first provided. Figure 6A and Figure 2A The primary difference in the illustrated embodiment is that the width W1 of the conductive vias V1, V2, and V3 in the Y direction is greater than the width W2 of the third pads 2131, 2132, and 2133 in the Y direction. In this embodiment, since the pads or vias are shaped like squares when viewed from above along the Z axis, the width along the X axis can be substantially the same as the width along the Y axis. In some embodiments, when viewed from above along the Z axis, the area of ​​the conductive vias V1, V2, and V3 is greater than the area of ​​the third pads 2131, 2132, and 2133. Furthermore, the width or area of ​​the third pads 2131, 2132, and 2133 can be equal to, but is not limited to, the width or area of ​​the first pads 2121, 2122, and 2123.

[0080] Figure 6B for Figure 6A A cross-sectional view of the light emitting module along the section line BB'. For the sake of clarity and convenience of illustration, Figure 6B Some components are omitted. Figure 1C 、 Figure 6A and Figure 6B , Figure 6B The light emitting module shown is a light emitting module in which a circuit layer is first provided in the manufacturing process. Figure 1C and Figure 6B The light-emitting modules of the illustrated embodiments are similar, and therefore, identical and similar components between the two embodiments will not be reiterated. For example, the light-emitting module first completes the fabrication of the redistribution layer (RDL) of the circuit structure, and then the light-emitting unit 300 (e.g., the first light-emitting unit 301) is bonded to the first pad 2121 and the third pad 2131 of the circuit structure.

[0081] For example, the redistribution layer RDL includes two circuit layers CL1 and CL2. The first circuit layer CL1 is, for example, the topmost circuit layer and the second circuit layer CL2 is the bottommost circuit layer. The first circuit layer CL1 includes a dielectric layer 110 and a connecting circuit. The connecting circuit includes, for example, a circuit 214 extending on the upper surface of the dielectric layer 110 and a connecting portion 2131C passing through the dielectric layer 110. In detail, a first pad 2121, a third pad 2131 and a node C11 are provided on the upper surface of the dielectric layer 110. The circuit 214 can connect the third pad 2131 to the upper pad 2131T of the conductive through hole V1. The conductive through hole V1 includes an upper pad 2131T, a lower pad 2131B and a connecting portion 2131C connecting the upper pad 2131T and the lower pad 2131B on the dielectric layer 110, and the connecting portion 2131C passes through the dielectric layer 110, so it will not be described in detail. As mentioned above, the lower pad 2131B can be defined as the bottom surface of the connection portion 2131C of the conductive via V1. The circuit 214 can connect the first pad 2121 to the upper pad of the node C11. As mentioned above, the node C11 includes an upper pad, a lower pad, and a connection portion connecting the upper pad and the lower pad on the dielectric layer 110, and the connection portion passes through the dielectric layer 110, so it will not be repeated. The second circuit layer CL2 includes the dielectric layer 120 and a connecting circuit. The connecting circuit includes, for example, a circuit extending on the upper surface of the dielectric layer 120 and a connection portion 2281C passing through the dielectric layer 120. In detail, the dielectric layer 120 is provided with a node 2281 and a node C21. The upper pad 2281T of the node 2281 contacts the lower pad 2131B of the conductive via V1. The connection portion 2281C of the node 2281 passes through the dielectric layer 120 and connects the upper pad 2281T and the lower pad 2281B. As described above, the upper pad of node C21 contacts the lower pad of node C11. The connection portion of node C21 penetrates dielectric layer 120 and connects the upper pad and the lower pad. Pads PD and PD' are provided on the lower surface of dielectric layer 120. Lower pad 2281B of node 2281 contacts pad PD. The lower pad of node C21 contacts pad PD'. In some embodiments, the pad or node can be a single layer of metal including molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), hafnium (Hf), nickel (Ni), chromium (Cr), cobalt (Co), zirconium (Zr), tungsten (W), aluminum (Al), copper (Cu), silver (Ag), other suitable conductive metals, or alloys or combinations of the above materials, but are not limited thereto.In some embodiments, the pads and nodes may also be formed by stacking multiple metal layers, and the thickness thereof may be 100 angstroms to 2000 angstroms, but is not limited thereto.

[0082] The third pad 2131 is connected to the conductive via V1 through the line 214. The first pad 2121 is electrically connected to the contact C11. The conductive via V1 passes through the dielectric layer 110 to be electrically connected to the node 2281. The contact C11 passes through the dielectric layer 110 to be connected to the node C21. The node 2281 passes through the dielectric layer 120 to be electrically connected to the pad PD. The node C21 passes through the dielectric layer 120 to be electrically connected to the pad PD'. Thereby, the third pad 2131 on the first side is connected to the pad PD on the second side through the line reconfiguration and / or integration of the redistribution wiring layer RDL. The pad PD can be the fourth pad in the aforementioned embodiment. The first pad 2121 on the first side is connected to the pad PD' on the second side through the line reconfiguration and / or integration of the redistribution wiring layer RDL. The pad PD' can be the second pad in the aforementioned embodiment. The pad PD and the pad PD' can be connected to the drive substrate in subsequent processes, but are not limited to this.

[0083] The first light-emitting unit 301 is electrically connected to the first pad 2121 and the third pad 2131. The first electrode 310 of the first light-emitting unit 301 is, for example, an anode and is electrically connected to the third pad 2131 to receive a driving voltage signal. The second electrode 320 is, for example, a cathode and is electrically connected to the first pad 2121 to receive a common voltage signal, but is not limited thereto.

[0084] Please also refer to Figure 6A and Figure 6B In some embodiments, the width W3 of the first electrode 310 is smaller than the width W2 of the third pad 2131. The width W2 of the third pad 2131 is smaller than the width W1 of the conductive via V1. The width W1 of the conductive via V1 can be defined as the maximum distance from the bottom of the conductive via V1 within the opening in the dielectric layer 110, i.e., the width of the bottom pad 2131B. To improve bonding quality and / or yield, the width W2 of the third pad 2131 is made larger than the width W3 of the electrode 310. Furthermore, to reduce impedance or prevent signal variations caused by impedance during switching, the width W1 of the conductive via V1 can be increased to be larger than the width W2 of the third pad 2131. Furthermore, to mitigate coupling issues or signal transmission anomalies in the re-integrated interconnect circuitry, the spacing width W5 between the first pad 2121 and the third pad 2131 in the X direction is smaller than the spacing width W4 between pads PD and PD' in the X direction.

[0085] In addition, the thickness of the dielectric layer 110 of the first circuit layer CL1 can be set to be smaller than the thickness of the dielectric layer 120 of the second circuit layer CL2. The above thickness is defined as the maximum distance of the dielectric layer on the Z axis. By increasing the thickness of the dielectric layer close to the bottom layer, the influence of circuit coupling can be reduced. In addition, the volume of the node 2281 and the node C21 in the second circuit layer CL2 can be increased. For example, the width W6 of the lower pad at the bottom of the opening of the node C11 in the dielectric layer 110 is smaller than the width W7 of the lower pad at the bottom of the opening of the node C21 in the dielectric layer 120. In this way, the volume of the node C21 is greater than the volume of the node C11. Similarly, the volume of the node 2281 is greater than the volume of the conductive via V1. In this way, the problem of circuit coupling or the situation of abnormal signal transmission can be further reduced.

[0086] Figure 7A FIG1 is a schematic top view of a light emitting module according to another embodiment of the present disclosure. Figure 7B for Figure 7A A cross-sectional view of the light emitting module along the section line CC'. For the sake of clarity and convenience of illustration, Figure 7A Several elements are omitted from illustration. Figure 7A The light emitting module shown is, for example, a structure in which a light emitting unit is first provided. The circuit structure of this embodiment is roughly similar to Figure 1B or Figure 6B Therefore, the same and similar components in the two embodiments will not be repeated here. Figure 7B and Figure 6B The main difference in the embodiment shown is that Figure 7B The light emitting module shown is a light emitting module in which the light emitting unit is first manufactured in the manufacturing process. For example, the light emitting unit 300 is first provided, and then the redistribution layer (RDL) of the circuit structure is manufactured on the light emitting unit 300.

[0087] For example, the first light-emitting unit 301, the second light-emitting unit 302, and the third light-emitting unit 303 are placed on a temporary carrier (not shown). The first light-emitting unit 301, the second light-emitting unit 302, and the third light-emitting unit 303 are then encapsulated by the encapsulation layer 190. The encapsulation layer 190 may include, but is not limited to, a film plastic material or epoxy resin. The encapsulation layer 190 may expose the first electrode 310.

[0088] Next, a redistribution layer RDL is provided on the packaging layer 190. The redistribution layer RDL includes two circuit layers CL1 and CL2. The dielectric layer 110 of the first circuit layer CL1 includes a plurality of openings VA1, and the third pads 2131, 2132, and 2133 are respectively filled into the openings VA1 to be electrically connected to the first electrode 310. Specifically, the first circuit layer CL1 includes a dielectric layer 110 and a connecting circuit. The connecting circuit includes a circuit extending on the surface of the dielectric layer 110, a pad, and a connecting portion penetrating the dielectric layer 110. The third pad 2131 includes a lower pad 2131B provided on the surface of the dielectric layer 110, an upper pad 2131T located at the bottom of the opening VA1, and a connecting portion 2131C penetrating the opening VA1 and connecting the lower pad 2131B and the upper pad 2131T. The lower pad 2131B is connected to the circuit 214 provided on the surface of the dielectric layer 110. Similarly, the third pad 2132 includes a lower pad 2132B disposed on the surface of the dielectric layer 110, an upper pad 2132T located at the bottom of the opening, and a connecting portion 2132C extending through the opening and connecting the lower pad 2132B and the upper pad 2132T. The third pad 2133 includes a lower pad 2133B disposed on the surface of the dielectric layer 110, an upper pad 2133T located at the bottom of the opening, and a connecting portion 2133C extending through the opening and connecting the lower pad 2133B and the upper pad 2133T. Upper pads 2131T, 2132T, and 2133T are electrically connected to the first electrodes 310 of the light-emitting elements 301, 302, and 303, respectively. The dielectric layer 120 of the second circuit layer CL2 is disposed on the dielectric layer 110 and has a plurality of openings VA2. Specifically, the second circuit layer CL2 includes the dielectric layer 120 and connecting circuits. The connection circuit includes a circuit extending on the surface of dielectric layer 120, a conductive via, and a connection portion extending through dielectric layer 120. Conductive via V1 includes a lower pad 2281B disposed on the surface of dielectric layer 120, an upper pad 2281T located at the bottom of opening VA2, and a connection portion 2281C extending through opening VA2 and connecting lower pad 2281B and upper pad 2281T. Upper pad 2281T is electrically connected to circuit 214 and lower pad 2131B. Similarly, conductive via V3 includes a lower pad 2283B disposed on the surface of dielectric layer 120, an upper pad 2283T located at the bottom of the opening, and a connection portion 2283C extending through the opening and connecting lower pad 2283B and upper pad 2283T. Upper pad 2283T is electrically connected to circuit 214 and lower pad 2133B.

[0089] The lower pads 2281B and 2283B can be used to connect external components or circuits. In some embodiments, the lower pads 2281B and 2283B can be the fourth pads on the second side, used to electrically connect to the pads of the driving substrate. The conductive vias V1 and V3 can be electrically connected to the circuit 214 or the third pads 2131 and 2133 through the openings VA1 and VA2. After completing the above process, the entire light-emitting module will be separated from the temporary carrier and transferred to a target substrate having a circuit (for example: Figure 1B The driving substrate SUB shown in FIG.

[0090] Figure 7C for Figure 7A The cross-sectional view of the light emitting module along the section line D-D'. For the sake of clarity and convenience of illustration, Figure 7C Some components are omitted. Figure 7A and Figure 7C The connection portion and upper pad of the conductive via V2 can be electrically connected to the circuit 214 or the third pad 2132 through the opening. The first electrode 310 of the second light-emitting unit 302 can be electrically connected to the third pad 2132. In addition, the second electrode 320 of the second light-emitting unit 302 can be electrically connected to the first pad 2122, and the first pad 2122 can be electrically connected to the contact C11 through the circuit 214. In some embodiments, the second electrodes 320 of two adjacent second light-emitting units 302 are each electrically connected to the first pad 2122 and can be connected to the contact C11 through the circuit 214 on the same layer, thereby achieving technical integration or reducing pads.

[0091] Figure 7D for Figure 7A The light emitting module is a cross-sectional view along the section line EE'. For the sake of clarity and convenience of illustration, Figure 7D Some components are omitted. Figure 7A and Figure 7D The second electrodes 320 of the first, second, and third light-emitting units 301, 302, and 303 are connected to first pads 2121, 2122, and 2123, respectively. First pads 2121, 2122, and 2123 are electrically connected to the wiring 214 on the same layer and to the upper pad of node C11. In other words, the first, second, and third light-emitting units 301, 302, and 303 can be connected in series to the same node C11, achieving integration or reducing pads.

[0092] Please refer to Figure 1B 、 Figure 7B 、 Figure 7C and Figure 7D , Figure 1B Shown is something like Figure 7B 、 Figure 7C and Figure 7D The light-emitting unit shown is a circuit structure that is first manufactured. Figure 1B The redistribution structure RDL further includes a third circuit layer CL3 arranged under the second circuit layer CL2. The fourth pads 2481, 2482, 2483 of the third circuit layer CL3 can be connected to the third pads 2131, 2132, 2133 on the first side 201 from the second side 202 through the redistribution circuit layer RDL. The fourth pads 2481, 2482, 2483 are electrically connected to the pads PD1, PD2, and PD3 of the drive substrate SUB. In addition, the first pads 2121, 2122, 2123 can be reconfigured and / or integrated and connected to the second pad 242 to be electrically connected to the pad CP of the drive substrate SUB. Under the above-mentioned setting, the drive substrate SUB can provide a driving signal to the light-emitting unit 300 through the pads PD1, PD2, and PD3, and provide a common signal to the light-emitting unit 300 through the pad CP. The circuit structure of the light emitting module can reduce the number of pads, reduce the risk of short circuit, increase the pad area, or reduce the difficulty of bonding with the driving substrate SUB, thereby improving the bonding quality between the light emitting module and the driving substrate SUB.

[0093] Figure 8A FIG1 is a schematic top view of a light emitting module according to another embodiment of the present disclosure. Figure 8B for Figure 8A A cross-sectional view of the light emitting module along the section line FF'. For the sake of clarity and convenience of illustration, Figure 8A and Figure 8B Several components are omitted. The circuit structure of this embodiment is roughly similar to Figure 7A Therefore, the same and similar components in the two embodiments will not be repeated here. Figure 8A and Figure 7A The main difference in the embodiment shown is that the second electrode 320 of the first light-emitting unit 301, the second light-emitting unit 302 and the third light-emitting unit 303 can be connected to the node C11 through the conductive pattern 214'. For example, the dielectric layer 110 can be provided with an opening VA1'. The line 214 is provided on the surface of the dielectric layer 110 and extends into the opening VA1'. The portion of the line 214 located in the opening VA1' can be defined as a conductive pattern 214'. A portion of the conductive pattern 214' can be provided in the opening VA1' and connected to the first light-emitting unit 301, the second light-emitting unit 302 and the third light-emitting unit 303. The conductive pattern 214' is connected to the node C11 through the line 214. Under the above-mentioned setting, the impedance increase caused by the ups and downs of the line on the surface of the dielectric layer can be reduced. In addition, the line structure of this embodiment can achieve substantially the same technical effects as the aforementioned embodiment.

[0094] Figure 9AThis is a top view of one circuit layer of a light emitting module according to another embodiment of the present disclosure. Figure 9A Some components are omitted. Figure 9A The third circuit layer CL3 of the light emitting module 10A is, for example, an active array layer, including a dielectric layer 130A and a circuit layer.

[0095] For example, the circuit layer includes a plurality of scan lines SL and signal lines DL. The scan lines SL extend along the X-axis, and the signal lines DL extend along the Y-axis. The scan lines SL and the signal lines DL are arranged in an interlaced manner. A plurality of thin film transistors TFT are arranged in an array and electrically connected to the scan lines SL and the signal lines DL. The thin film transistor TFT, for example, includes a semiconductor channel layer, a gate, and a source and a drain electrically connected to the semiconductor channel layer. The material of the semiconductor channel layer, for example, includes amorphous silicon semiconductor (amorphous silicon), low temperature polycrystalline silicon semiconductor (Low Temperature Poly-Silicon, LTPS) or metal oxide (metal oxide), or a combination of the above materials, but the present disclosure is not limited thereto. In some embodiments, different thin film transistors TFT may have the above different semiconductor materials. In addition, the thin film transistor TFT may include a top gate transistor, a bottom gate transistor, a dual gate transistor and a double gate transistor as needed, but is not limited thereto.

[0096] In this embodiment, the gate of the thin film transistor TFT can be electrically connected to one of the scan lines SL, and the source can be electrically connected to one of the signal lines DL. The materials of the gate, source and drain can be the same as those of the pads or nodes described above and will not be described in detail here.

[0097] The dielectric layer 130A can be arranged on the circuit layer and a plurality of nodes 2381, 2382, and 2383 can be arranged in an array. Each node 2381, 2382, and 2383 is respectively arranged corresponding to a thin film transistor TFT. For example, the node 2381 can be correspondingly arranged between the scan line SL and the signal line DL and electrically connected to the drain of the thin film transistor TFT. In this way, the thin film transistor TFT can control the conduction of the node 2381. The plurality of nodes 2381, 2382, and 2383 are respectively connected to the corresponding light-emitting units 300. As mentioned above, the nodes 2381, 2382, and 2383 can respectively include an upper pad and a lower pad on the dielectric layer 130, and a connecting portion that penetrates the dielectric layer 130 and connects the upper pad to the lower pad. The thin film transistor TFT can be connected to the upper pad of the nodes 2381, 2382, and 2383. Thereby, the thin film transistor TFT is electrically connected to one of the plurality of light emitting units 300 , and the thin film transistor TFT can be used as a switch for controlling the light emitting unit 300 .

[0098] In some embodiments, the circuit layer further includes a driving circuit 400. The driving circuit 400 is, for example, a gate driving circuit. The driving circuit 400 is electrically connected to the scan line SL to control the opening or closing of the gate of the thin film transistor TFT. Nodes 2381, 2382, and 2383 are electrically connected to the signal line DL through the thin film transistor TFT. The signal line DL is connected to the through holes V1, V2, and V3. As mentioned above, the through holes V1, V2, and V3 may respectively include an upper pad, a lower pad, and a connection portion that passes through the dielectric layer 130A and connects the upper pad to the lower pad on the dielectric layer 130A. In addition, the transmission node TN3 can integrate the common voltage signal line of each light-emitting unit 300, and then pass through the dielectric layer 130A to connect to the lower surface of the dielectric layer 130A or other circuit layers.

[0099] Figure 9B This is a bottom view of a light emitting module according to another embodiment of the present disclosure. Figure 9B Some components are omitted. Figure 9B A plurality of pads are disposed on the lower surface 132 (ie, the second side) of the dielectric layer 130A of the third circuit layer CL3 of the light emitting module 10A. Figure 9A and Figure 9B, the lower pads of the through holes V1, V2, and V3 can be electrically connected to the fourth pads 2481, 2482, and 2483. In another embodiment, the lower pads on the bottom surfaces of the through holes V1, V2, and V3 can be applied as the fourth pads 2481, 2482, and 2483. The driving circuit 400 is electrically connected to the pad 420. The bottom surface of the transmission node TN3 passing through the dielectric layer 130A is electrically connected to the second pad 242. The transmission node TN3 and the corresponding second pad 242 can have different shapes in the Z direction, but are not limited to this. Under the above-mentioned configuration, the light-emitting module 10A can further reduce the number of pads, reduce the risk of short circuits, increase the pad area, or reduce the difficulty of bonding with the driving substrate SUB through the active array layer and the driving circuit 400, and the bonding quality between the light-emitting module 10A and the driving substrate SUB can be improved.

[0100] Figure 10A FIG1 is a schematic top view of a light emitting module according to another embodiment of the present disclosure. Figure 10B This is a bottom view of a light emitting module according to another embodiment of the present disclosure. Figure 10A and Figure 10B Some components are omitted. Figure 10A and Figure 10B , Figure 10A Similar to Figure 2A It is shown that a plurality of first pads 2121 , 2122 , 2123 and a plurality of third pads 2131 , 2132 , 2133 are arranged in pairs on the upper surface 111 of the dielectric layer 110 (ie, the first side of the circuit structure). Figure 10B The fourth pads 2481', 2482', 2483' and the second pad 242' are shown on the lower surface 132 of the dielectric layer 130 (i.e., the second side of the circuit structure). In this embodiment, the dispersion between the fourth pads is greater than the dispersion between the third pads. The dispersion can be defined by the inverse of the standard deviation, as shown in the following formula 1:

[0101]

[0102] Where SD is the standard deviation, xi is the distance between adjacent pads, N is the number of adjacent pads (a positive integer), and μ is the average distance between adjacent pads (the sum of all adjacent pad distances divided by N). The reciprocal of the measured standard deviation SD can be used to define the dispersion between pads. A larger standard deviation SD results in a smaller reciprocal, indicating that the distances between adjacent pads deviate from the average, resulting in poor dispersion. A smaller standard deviation SD results in a larger reciprocal, indicating that the distances between adjacent pads are closer to the average, resulting in better dispersion.

[0103] like Figure 10AIn the illustrated embodiment, distance x1' is the distance between the third pad 2131 and the third pad 2133 in the Y direction. Distance x2' is the distance between the third pad 2131 and the first pad 2121 in the X direction. Distance x3' is the distance between the third pad 2131 and the third pad 2132 in the Y direction. Distance x4' is the distance between the third pad 2131 and the first pad 2121' in the X direction.

[0104] like Figure 10B In the illustrated embodiment, the distances x1 ″, x2 ″, x3 ″, and x4 ″ are the distances between the fourth pad 2481 ′ and four adjacent fourth pads in different directions.

[0105] like Figure 10A The distances x1', x2', x3', and x4' shown are not consistent in size, and each of them is significantly different from the average value of the distances x1', x2', x3', and x4'. Figure 10A The distance between the pads shown, Figure 10B The distances x1", x2", x3", and x4" shown are close to each other, and each has a small difference from the average value of the distance x1", x2", x3", and x4". Based on the above, the standard deviation SD' of the distance between the third pad 2131 located on the first side and the other adjacent pads is greater than the standard deviation SD" of the distance between the fourth pad 2481' located on the second side and the other adjacent pads. In other words, the dispersion between the fourth pads 2481' (i.e., the inverse of the distance standard deviation SD") is better than the dispersion between the first pads 2121, 2122, 2123 or the third pads 2131, 2132, 2133 (i.e., the inverse of the distance standard deviation SD'), so the fourth pads 2481', 2482', 2483' are arranged in a more even manner. Thereby, the circuit structure of the light-emitting module 10B can reduce the number of pads, reduce the risk of short circuit, increase the pad area, or reduce the difficulty of bonding with the driving substrate SUB. In addition, the distance between the fourth pads 2481 ′, 2482 ′, and 2483 ′ can be increased, thereby improving the bonding quality between the light emitting module 10B and the driving substrate SUB.

[0106] In summary, in the light-emitting module and the light-emitting device of one embodiment of the present disclosure, since the pads on the second side of the circuit structure can be reconfigured or integrated by redistributing the circuit layer, the number of pads on the second side of the circuit structure can be reduced, reducing the risk of short circuit or reducing the difficulty of bonding with the driving substrate. The bonding quality between the light-emitting module and the driving substrate can be improved. The light-emitting device can have better bonding quality or display quality. In addition, since the dispersion between the fourth pad and the adjacent pad on the second side of the circuit structure can be smaller than the dispersion between the first pad or the third pad and the adjacent pad on the first side of the circuit structure, the distance between the pads on the second side can be evenly dispersed, reducing the risk of short circuit or reducing the difficulty of bonding with the driving substrate. In addition, the distance between adjacent pads on the second side can also be increased. The bonding quality between the light-emitting module and the driving substrate can be improved. The light-emitting device can have better bonding quality or display quality.

[0107] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light emitting module, characterized in that: include: A circuit structure having a first side and a second side opposite to the first side, the circuit structure comprising: A plurality of first pads are disposed on the first side; At least one second pad is disposed on the second side, and the plurality of first pads are electrically connected to the at least one second pad; A plurality of third pads are disposed on the first side; A plurality of fourth pads are disposed on the second side, wherein the plurality of third pads are electrically connected to corresponding fourth pads; The redistribution circuit layer is disposed between the plurality of first pads and the at least one second pad and includes: a first circuit layer comprising a plurality of conductive vias, a first node, and a first circuit, wherein the plurality of conductive vias and the first node are electrically connected to the plurality of first pads through the first circuit; a second circuit layer comprising a plurality of first transmission nodes, a second node, and a second circuit, wherein the plurality of first transmission nodes are electrically connected to the first node, and the plurality of first transmission nodes are electrically connected to the second node via the second circuit; and a third circuit layer, comprising a plurality of second transmission nodes, a third node, a third circuit, a plurality of fourth nodes, and a plurality of fifth pads, wherein the plurality of second transmission nodes are electrically connected to the second node, the plurality of second transmission nodes are electrically connected to the third node via the third circuit, the plurality of fourth nodes are electrically connected to the plurality of fifth pads via the third circuit, and the plurality of fifth pads are electrically connected to the plurality of conductive vias; and A plurality of light-emitting units are electrically connected to the plurality of first pads, wherein the number of the plurality of first pads is greater than the number of the at least one second pad, The plurality of fourth pads are electrically connected to the plurality of third pads through the plurality of fourth nodes and the plurality of conductive vias.

2. The light emitting module according to claim 1, wherein: The plurality of first pads and the at least one second pad are configured to receive a common voltage.

3. The light emitting module according to claim 1, wherein: An area of ​​one of the at least one second pad is larger than an area of ​​one of the plurality of first pads.

4. The light emitting module according to claim 1, wherein: The plurality of first pads are electrically connected to the at least one second pad through the redistribution wiring layer.

5. The light emitting module according to claim 1, wherein: A width of one of the first transmission nodes is greater than a width of one of the first pads, and a width of one of the first transmission nodes is less than a width of one of the at least one second pad. The light emitting module according to claim 1 , wherein: The number of the plurality of first transmission nodes is greater than the number of the at least one second pad, and the number of the plurality of first transmission nodes is less than the number of the plurality of first pads.

7. The light emitting module according to claim 1, wherein: The number of the third pads is equal to the number of the fourth pads.

8. The light emitting module according to claim 7, characterized in that: The dispersion between the fourth pads is greater than the dispersion between the third pads.

9. The light emitting module according to claim 1, wherein: The circuit structure further includes a thin film transistor electrically connected to at least one of the plurality of light emitting units.

10. A light emitting device, characterized in that: include: Driver substrate; as well as A plurality of light-emitting modules as claimed in claim 1, wherein each of the plurality of light-emitting modules is electrically connected to the driving substrate through the at least one second pad.

11. A light emitting module, characterized in that: include: A circuit structure having a first side and a second side opposite to the first side, the circuit structure comprising: A plurality of first pads are disposed on the first side; At least one second pad is disposed on the second side, and the plurality of first pads are electrically connected to the at least one second pad; The redistribution circuit layer is disposed between the plurality of first pads and the at least one second pad and includes: a plurality of transmission nodes, wherein a width of one of the plurality of transmission nodes is greater than a width of one of the plurality of first pads and smaller than a width of the at least one second pad; a plurality of light-emitting units electrically connected to the plurality of first pads, wherein the number of the plurality of first pads is greater than the number of the at least one second pad; and A first encapsulation layer and a second encapsulation layer, wherein the first encapsulation layer covers a first portion of the light-emitting unit, and the second encapsulation layer covers a second portion of the light-emitting unit, and a shape of the first encapsulation layer is different from a shape of the second encapsulation layer.

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