A grating adjustment method and system

Abstract

The present invention provides a method and system for adjusting a grating, the method comprising: obtaining the duty ratio of the grating after exposure and development; if the duty ratio of the grating does not meet the manufacturing requirements, micro-adjusting the photoresist mask until the duty ratio of the grating meets the manufacturing requirements. The system is used to execute the above method. The method and system for adjusting a grating provided in an embodiment of the present invention do not need to strictly control the exposure amount and the development stability of the developer during the manufacturing process of the grating, thereby reducing the process complexity and production cost of the grating manufacturing and improving the accuracy of the duty ratio of the grating.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a grating adjustment method and system. Background Art

[0002] The holographic grating mask is produced by superimposing two coherent plane waves on the grating substrate to form alternating light and dark interference fringes, which are recorded by the photoresist coated on the substrate to form a refractive index modulated grating. Then, according to the different dissolution rates of its excited molecules in the developer, a relief photoresist grating is finally formed.

[0003] The duty ratio of the holographic grating not only affects the diffraction efficiency of the grating, but also affects the ion beam etching of the grating. The precise control of the exposure amount and the control of the development time can help to accurately control the shape of the grating. However, the precise monitoring of the exposure light intensity and the continuous renewal of the developer to maintain stable development characteristics have high requirements for the control of many details in the process, which increases the complexity and cost of process control, making it difficult to control the shape of the grating, and the duty ratio of the obtained grating is not accurate enough. Summary of the invention

[0004] In view of the problems in the prior art, an embodiment of the present invention provides a method and system for adjusting a grating, which can at least partially solve the problems in the prior art.

[0005] In a first aspect, the present invention provides a method for adjusting a grating, comprising:

[0006] After exposure and development, the duty ratio of the grating is obtained;

[0007] If the duty ratio of the grating does not meet the manufacturing requirements, the photoresist mask is micro-adjusted until the duty ratio of the grating meets the manufacturing requirements.

[0008] Furthermore, the micro-adjustment of the photoresist mask includes:

[0009] The shape of the ion beam etching the photoresist mask is controlled by a baffle to obtain a grating with a variable duty ratio; wherein the baffle has a hollow structure, and the width of the hollow structure in the moving direction of the photoresist mask is different.

[0010] Further, the step of obtaining the duty ratio of the grating of the photoresist mask includes:

[0011] Acquiring a three-dimensional surface image of the photoresist mask;

[0012] The duty ratio of the grating is obtained based on the three-dimensional surface map of the photoresist mask.

[0013] Furthermore, the micro-adjusting of the photoresist mask until the duty ratio of the grating meets the manufacturing requirements includes:

[0014] After each micro-adjustment of the photoresist mask, the duty ratio of the grating is reacquired;

[0015] If the absolute value of the difference between the duty ratio of the grating and the target duty ratio is greater than a preset value, the photoresist mask continues to be micro-adjusted.

[0016] Further, the continuing to perform micro-adjustment on the photoresist mask includes:

[0017] The parameters of the plasma ashing machine are adjusted to reduce the amount of adjustment to the photoresist mask.

[0018] Furthermore, the grating adjustment method provided by the embodiment of the present invention also includes:

[0019] After the microscopic adjustment of the photoresist mask is completed, the substrate of the photoresist mask is etched to transfer the shape of the grating mask to the substrate.

[0020] Furthermore, the microscopic adjustment is a nanometer-level microscopic adjustment.

[0021] In a second aspect, the present invention provides a grating adjustment system, comprising:

[0022] An acquisition module, used for acquiring the duty ratio of the grating after exposure and development;

[0023] The adjustment module is used to perform micro-adjustment on the photoresist mask after the duty ratio of the grating does not meet the manufacturing requirements, until the duty ratio of the grating meets the manufacturing requirements.

[0024] In a third aspect, the present invention provides an electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the program, the steps of the grating adjustment method described in any of the above embodiments are implemented.

[0025] In a fourth aspect, the present invention provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of the grating adjustment method described in any of the above embodiments.

[0026] The grating adjustment method and system provided in the embodiment of the present invention obtain the duty ratio of the grating after exposure and development. If the duty ratio of the grating does not meet the manufacturing requirements, the photoresist mask is micro-adjusted until the duty ratio of the grating meets the manufacturing requirements. During the manufacturing process of the grating, there is no need to strictly control the exposure amount and the development stability of the developer, thereby reducing the process complexity and production cost of the grating manufacturing and improving the accuracy of the duty ratio of the grating. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the prior art descriptions. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. In the drawings:

[0028] Figure 1 It is a flowchart of a method for adjusting a grating provided in the first embodiment of the present invention.

[0029] Figure 2 It is a schematic diagram of manufacturing a grating with a variable duty ratio provided by the second embodiment of the present invention.

[0030] Figure 3 It is a flowchart of a method for adjusting a grating provided in a third embodiment of the present invention.

[0031] Figure 4 It is a partial schematic diagram of the three-dimensional surface of the photoresist mask provided by the fourth embodiment of the present invention.

[0032] Figure 5 It is a flowchart of a method for adjusting a grating provided in a fifth embodiment of the present invention.

[0033] Figure 6 It is a flowchart of a method for adjusting a grating provided in a sixth embodiment of the present invention.

[0034] Figure 7 It is a structural schematic diagram of a grating adjustment system provided in the seventh embodiment of the present invention.

[0035] Figure 8 It is a schematic diagram of the physical structure of an electronic device provided by the eighth embodiment of the present invention. DETAILED DESCRIPTION

[0036] In order to make the purpose, technical scheme and advantages of the embodiments of the present invention more clear, the embodiments of the present invention are further described in detail below in conjunction with the accompanying drawings. Here, the illustrative embodiments of the present invention and their descriptions are used to explain the present invention, but are not intended to limit the present invention. It should be noted that, in the absence of conflict, the embodiments in this application and the features in the embodiments can be combined with each other arbitrarily.

[0037] In order to facilitate understanding of the technical solution provided by this application, the relevant contents of the technical solution of this application are first explained below.

[0038] Duty ratio: The ratio of the line width to the period of the grating structure is the duty ratio. If it is a photoresist mask, the size of the duty ratio directly affects its diffraction efficiency. If etching is involved later, it will directly affect the diffraction efficiency of the etched structure, which will have a great impact on subsequent use.

[0039] The basic production process of gratings includes steps such as substrate cleaning, positive photoresist coating, exposure, development, ion beam etching and pickling. The processing of grating master uses the method of photolithography, which requires an organic resin called photoresist. If the photoresist is exposed to light, its chemical properties will change and it will be easily dissolved in the developer. If the photoresist is not exposed to light, it will not dissolve in the developer. Photolithography is based on the above characteristics of photoresist. Smoothing is the preparation work to be done before photolithography. The process is to first clean and dry the substrate, then evenly apply the photoresist to the substrate, pour the photoresist on the substrate, and then evenly spread it by rotating. After applying a layer of photoresist on the substrate, it is usually exposed with the help of a mask with a pattern structure, and then the exposed substrate is soaked in the developer, so that the photoresist exposed to light will be dissolved, and a photoresist mask is obtained on the substrate.

[0040] At this time, the grating adjustment method provided in the embodiment of the present invention can be adopted to use a plasma ashing machine to perform microscopic adjustments on the photoresist mask to reduce the duty ratio until the duty ratio meets the manufacturing requirements.

[0041] Figure 1 FIG. 1 is a flow chart of a method for adjusting a grating provided in a first embodiment of the present invention. Figure 1 As shown, the grating adjustment method provided by the embodiment of the present invention includes:

[0042] S101, after exposure and development, obtaining a duty ratio of the grating;

[0043] Specifically, after the photoresist on the substrate is exposed and developed, a photoresist mask is formed on the substrate. At this time, the duty ratio of the grating is obtained.

[0044] S102: If the duty ratio of the grating does not meet the manufacturing requirements, micro-adjust the photoresist mask until the duty ratio of the grating meets the manufacturing requirements.

[0045] Specifically, the duty ratio of the grating is compared with the target duty ratio. If the duty ratio of the grating does not match the target duty ratio, it means that the duty ratio of the grating does not meet the manufacturing requirements, and the photoresist mask needs to be adjusted. The photoresist mask can be micro-adjusted by a plasma ashing machine to reduce the duty ratio of the grating. The process of reducing the duty ratio of the grating can be repeated until the duty ratio of the grating meets the manufacturing requirements. The target duty ratio is set according to actual needs and is not limited in the embodiment of the present invention.

[0046] The following is a brief introduction to the working principle of the plasma asher. Normally, the entire vacuum wall of the plasma asher is grounded as the anode, and the cathode is the power electrode. The grounded shield on the side of the cathode can prevent the power electrode from being sputtered. The substrate to be etched is placed on the power electrode. The corrosive gas fills the entire reaction chamber according to a certain working pressure and matching ratio. A high-frequency electric field greater than the critical value of gas breakdown is applied to the corrosive gas in the reaction chamber. Under the action of the strong electric field, the stray electrons accelerated by the high-frequency electric field collide randomly with gas molecules or atoms. When the electron energy reaches a certain level, the random collision becomes an inelastic collision, generating secondary electron emission, which further collides with gas molecules, continuously exciting or ionizing gas molecules. This intense collision causes ionization and recombination. When the process of electron generation and disappearance reaches equilibrium, the discharge energy can continue to be maintained. The ions, electrons and free radicals (free atoms, molecules or atomic groups) generated by the inelastic collision are also called plasma, which has strong chemical activity and can react chemically with the atoms on the surface of the etched sample to form volatile substances, thereby achieving the purpose of corroding the surface of the sample. At the same time, since the direction of the electric field near the cathode is perpendicular to the cathode surface, high-energy ions are vertically shot toward the sample surface under a certain working pressure for physical bombardment, making the reactive ion etching have good anisotropy.

[0047] In an embodiment of the present invention, organic matter on the surface of the substrate, here the photoresist, is removed by oxygen bombardment, thereby achieving nanometer-level adjustment of the duty ratio. Of course, this method can only be used within a certain range. If the etching time is too long, the photoresist mask will lose a large amount of thickness and cause structural changes. The residual photoresist can also be cleaned up by this method. It should be noted that oxygen ions will only react with the photoresist and will not react with the substrate, so that it is possible to achieve only changing the microscopic size of the photoresist mask and adjusting the duty ratio.

[0048] The grating adjustment method provided in the embodiment of the present invention obtains the duty ratio of the grating after exposure and development. If the duty ratio of the grating does not meet the manufacturing requirements, the photoresist mask is micro-adjusted until the duty ratio of the grating meets the manufacturing requirements. During the manufacturing process of the grating, there is no need to strictly control the exposure amount and the development stability of the developer, thereby reducing the process complexity and production cost of the grating manufacturing and improving the accuracy of the duty ratio of the grating.

[0049] On the basis of the above embodiments, further, the micro-adjustment of the photoresist mask includes:

[0050] The shape of the ion beam etching the photoresist mask is controlled by a baffle to obtain a grating with a variable duty ratio; wherein the baffle has a hollow structure, and the width of the hollow structure in the moving direction of the photoresist mask is different.

[0051] Specifically, when the photoresist mask is etched by a plasma ashing machine, a baffle can be arranged on the photoresist mask to control the shape of the ion beam etching the photoresist mask. The baffle has a hollow structure, and the ion beam generated by the plasma ashing machine can be projected through the hollow structure on the baffle, and the non-hollow part of the baffle will shield the ion beam. The width of the hollow structure in the moving direction of the photoresist mask is different, resulting in different ashing times of the photoresist masks corresponding to the hollow structures, the photoresist mask with a long ashing time has a larger reduction in duty ratio, and the photoresist mask with a short ashing time has a smaller reduction in duty ratio, so that a grating with a variable duty ratio can be obtained.

[0052] For example, Figure 2 As shown, the baffle has a hollow structure, and the hollow structure is narrow in the middle and wide on both sides in the moving direction of the photoresist mask. Point A on the photoresist mask corresponds to the width L2 on the hollow, and point B on the photoresist mask corresponds to the width L1 on the hollow, and L1 is smaller than L2. When the photoresist mask moves from left to right and the baffle is fixed, point A on the photoresist mask undergoes ion beam etching of a length of L2, and point B on the photoresist mask undergoes ion beam etching of a length of L1. The ashing time of point A and point B is different, and the duty ratio reduction is also different. If the photoresist mask to be etched is a photoresist mask with a uniform duty ratio, each point on the photoresist mask will be ashed for different times, and a grating with a variable duty ratio will be formed.

[0053] Figure 3 FIG. 1 is a flow chart of a method for adjusting a grating provided in a third embodiment of the present invention. Figure 3 As shown, based on the above embodiments, further, the duty ratio of the grating of the photoresist mask is obtained including:

[0054] S301, obtaining a three-dimensional surface image of the photoresist mask;

[0055] Specifically, a three-dimensional surface image of the photoresist mask can be obtained by an atomic force microscope, and the line width and period of the grating can be measured on the three-dimensional surface image of the photoresist mask.

[0056] S302 , obtaining a duty ratio of the grating based on a three-dimensional surface image of the photoresist mask.

[0057] Specifically, the duty ratio of the grating can be calculated by measuring the line width and period of the grating obtained by measuring the three-dimensional surface image of the photoresist mask.

[0058] For example, Figure 4 As shown, taking the photoresist mask for processing two-dimensional grating as an example, the lateral period T1 and the lateral line width L1 can be measured on the three-dimensional surface image of the photoresist mask, and the lateral duty ratio is L1 / T1; the longitudinal period T2 and the longitudinal line width L2 can be measured on the three-dimensional surface image of the photoresist mask, and the lateral duty ratio is L2 / T2.

[0059] Figure 5 is a flow chart of a method for adjusting a grating provided in a fifth embodiment of the present invention, such as Figure 5 As shown, based on the above embodiments, further, the micro-adjustment of the photoresist mask until the duty ratio of the grating meets the manufacturing requirements includes:

[0060] S501, reacquiring the duty ratio of the grating after micro-adjusting the photoresist mask each time;

[0061] Specifically, in order to obtain the target duty ratio, a larger duty ratio of the grating can be reserved, and the photoresist mask can be micro-adjusted multiple times to gradually approach the target duty ratio. After each micro-adjustment of the photoresist mask, the duty ratio of the grating is re-acquired.

[0062] S502: If the absolute value of the difference between the reacquired duty ratio of the grating and the target duty ratio is greater than a preset value, continue to perform micro-adjustment on the photoresist mask.

[0063] Specifically, the absolute value of the difference between the reacquired duty ratio of the grating and the target duty ratio is calculated. If the absolute value of the difference is greater than the preset value, it means that the duty ratio of the grating still does not meet the manufacturing requirements, and the photoresist mask will continue to be micro-adjusted. It is understandable that if the absolute value of the difference is less than or equal to the preset value, it means that the duty ratio of the grating can meet the manufacturing requirements and no further adjustment is required. Among them, the preset value is set according to actual needs and experience, and the embodiment of the present invention is not limited. Reacquiring the duty ratio after each micro-adjustment of the photoresist mask to determine whether to perform micro-adjustments on the photoresist mask can improve the accuracy of the duty ratio adjustment.

[0064] For example, if only the duty ratio in direction A of the grating is required, the duty ratio λ in direction A is calculated, and then the absolute value e of the difference between λ and the target duty ratio is calculated. If e is greater than the preset value ε, the photoresist mask is further micro-adjusted. If e is less than or equal to ε, there is no need to micro-adjust the photoresist mask, and the next process can be performed.

[0065] For example, both the lateral duty ratio and the longitudinal duty ratio of the grating need to meet the manufacturing requirements. The lateral duty ratio λ1 and the longitudinal duty ratio λ2 are calculated, and then the absolute value e1 of the difference between the lateral duty ratio λ1 and the corresponding target duty ratio, and the absolute value e2 of the difference between the longitudinal duty ratio λ2 and the corresponding target duty ratio are calculated. If e1 is greater than the corresponding preset value ε1, and e2 is greater than the corresponding preset value ε2, then the photoresist mask continues to be micro-adjusted. If e1 is greater than the corresponding preset value ε1, but e2 is less than or equal to the corresponding preset value ε2, then the photoresist mask in the lateral direction is micro-adjusted, and there is no need to make micro-adjustments to the photoresist mask in the longitudinal direction. If e2 is greater than the corresponding preset value ε2, but e1 is less than or equal to the corresponding preset value ε1, then the photoresist mask in the longitudinal direction is micro-adjusted, and there is no need to make micro-adjustments to the photoresist mask in the lateral direction. If e1 is less than or equal to the corresponding preset value ε1, and e2 is less than or equal to the corresponding preset value ε2, then there is no need to make microscopic adjustments to the photoresist mask and proceed to the next process.

[0066] On the basis of the above embodiments, further, continuing to perform micro-adjustment on the photoresist mask includes:

[0067] The parameters of the plasma ashing machine are adjusted to reduce the amount of adjustment to the photoresist mask.

[0068] Specifically, after the last micro-adjustment of the photoresist mask, the photoresist mask still needs to be micro-adjusted. However, if the parameters of the plasma ashing machine are not changed and the micro-adjustment of the photoresist mask continues to be performed, the duty ratio of the adjusted grating will be too small. In this case, the parameters of the plasma ashing machine need to be adjusted to reduce the adjustment amount of the photoresist mask this time to avoid the duty ratio of the adjusted grating being too small and failing to meet the manufacturing requirements.

[0069] For example, the ashing time of a plasma asher can be reduced, thereby reducing the amount of reduction in the photoresist mask.

[0070] On the basis of the above embodiments, further, the grating adjustment method provided by the embodiment of the present invention further includes:

[0071] After the microscopic adjustment of the photoresist mask is completed, the substrate of the photoresist mask is etched to transfer the shape of the grating mask to the substrate.

[0072] Specifically, during the micro-adjustment of the photoresist mask by a plasma ashing machine, oxygen ions (oxygen) are used to bombard the grating surface, only etching the photoresist but not etching the substrate, reducing the line width of the photoresist and reducing the duty ratio. After the micro-adjustment of the photoresist mask is completed, that is, the duty ratio of the grating meets the manufacturing requirements, the gas is changed, that is, the gas that only etches the substrate but not the photoresist mask is used to etch the substrate, so that the grating mask shape can be transferred to the substrate.

[0073] On the basis of the above embodiments, further, the microscopic adjustment is a nanometer-level microscopic adjustment.

[0074] The following is a specific example to illustrate the implementation process of the grating adjustment method provided by the embodiment of the present invention. Figure 6 shown.

[0075] The first step is to evenly coat the photoresist onto the substrate.

[0076] The second step is to perform photolithography and development on the substrate. By performing photolithography and development on the substrate in sequence, a photoresist mask can be prepared on the substrate.

[0077] Step 3: Obtaining the duty ratio of the grating: Using an atomic force microscope to obtain a three-dimensional surface image of the photoresist mask, the duty ratio of the grating can be obtained based on the three-dimensional surface image of the photoresist mask.

[0078] Step 4: Determine whether the duty ratio of the grating meets the requirements. Compare the duty ratio of the grating with the target duty ratio. If the absolute value of the difference between the duty ratio of the grating and the target duty ratio is greater than the preset value, the duty ratio of the grating does not meet the requirements, and proceed to step 5; if the absolute value of the difference between the duty ratio of the grating and the target duty ratio is less than or equal to the preset value, the duty ratio of the grating meets the requirements, and the process ends.

[0079] Step 5: Micro-adjust the photoresist mask. Use a plasma ashing machine to micro-adjust the photoresist mask to reduce the duty ratio of the grating.

[0080] Step 6: Re-acquire the duty ratio of the grating. Use an atomic force microscope to acquire a three-dimensional surface image of the photoresist mask after microscopic adjustment, and obtain the duty ratio of the grating based on the re-acquired three-dimensional surface image of the photoresist mask.

[0081] The present invention etches the photoresist mask on the developed substrate by a plasma etcher, controls the shape of the photoresist mask in different areas by the etching time of different areas, and performs quantitative analysis in combination with an atomic force microscope, thereby being able to obtain an accurate duty ratio of the grating.

[0082] Figure 7 is a schematic diagram of the structure of a grating adjustment system provided by a seventh embodiment of the present invention, such as Figure 7 As shown, the grating adjustment system provided by the embodiment of the present invention includes an acquisition module 701 and an adjustment module 702, wherein:

[0083] The acquisition module 701 is used to acquire the duty ratio of the grating after exposure and development; the adjustment module 702 is used to perform micro-adjustments on the photoresist mask after the duty ratio of the grating does not meet the manufacturing requirements until the duty ratio of the grating meets the manufacturing requirements.

[0084] Specifically, after the photoresist on the substrate is exposed and developed, a photoresist mask is formed on the substrate. At this time, the acquisition module 701 acquires the duty ratio of the grating.

[0085] The adjustment module 702 compares the duty ratio of the grating with the target duty ratio. If the duty ratio of the grating does not match the target duty ratio, it means that the duty ratio of the grating does not meet the manufacturing requirements, and the photoresist mask needs to be adjusted. The photoresist mask can be micro-adjusted by a plasma ashing machine to reduce the duty ratio of the grating. The process of reducing the duty ratio of the grating can be repeated until the duty ratio of the grating meets the manufacturing requirements. The target duty ratio is set according to actual needs, and the embodiment of the present invention is not limited thereto.

[0086] The grating adjustment system provided in the embodiment of the present invention obtains the duty ratio of the grating after exposure and development. If the duty ratio of the grating does not meet the manufacturing requirements, the photoresist mask is micro-adjusted until the duty ratio of the grating meets the manufacturing requirements. During the manufacturing process of the grating, there is no need to strictly control the exposure amount and the development stability of the developer, thereby reducing the process complexity and production cost of the grating manufacturing and improving the accuracy of the duty ratio of the grating.

[0087] On the basis of the above embodiments, further, the adjustment module 702 is specifically used for:

[0088] The shape of the ion beam etching the photoresist mask is controlled by a baffle to obtain a grating with a variable duty ratio; wherein the baffle has a hollow structure, and the width of the hollow structure in the moving direction of the photoresist mask is different.

[0089] On the basis of the above embodiments, further, the acquisition module 701 includes:

[0090] The acquisition unit is used to acquire a three-dimensional surface image of the photoresist mask; the acquisition unit is used to acquire a duty ratio of the grating based on the three-dimensional surface image of the photoresist mask.

[0091] On the basis of the above embodiments, further, the adjustment module 702 includes:

[0092] The reacquisition unit is used to reacquire the duty ratio of the grating after each micro-adjustment of the photoresist mask; the adjustment unit is used to continue to micro-adjust the photoresist mask after the absolute value of the difference between the duty ratio of the grating and the target duty ratio is greater than a preset value.

[0093] On the basis of the above embodiments, the adjustment unit is further configured to:

[0094] The parameters of the plasma ashing machine are adjusted to reduce the amount of adjustment to the photoresist mask.

[0095] On the basis of the above embodiments, further, the grating adjustment system provided in the embodiment of the present invention further includes an etching module, wherein:

[0096] The etching module is used to etch the substrate of the photoresist mask after the microscopic adjustment of the photoresist mask is completed to transfer the shape of the grating mask to the substrate.

[0097] On the basis of the above embodiments, further, the microscopic adjustment is a nanometer-level microscopic adjustment.

[0098] The system embodiment provided by the embodiment of the present invention can be specifically used to execute the processing flow of the above-mentioned method embodiments. Its functions are not described in detail here, and reference can be made to the detailed description of the above-mentioned method embodiments.

[0099] Figure 8 is a schematic diagram of the physical structure of an electronic device provided by an embodiment of the present invention, such as Figure 8 As shown, the electronic device may include: a processor 801, a communication interface 802, a memory 803 and a communication bus 804, wherein the processor 801, the communication interface 802 and the memory 803 communicate with each other through the communication bus 804. The processor 801 may call the logic instructions in the memory 803 to execute the following method: after exposure and development, the duty ratio of the grating is obtained; if the duty ratio of the grating does not meet the manufacturing requirements, the photoresist mask is micro-adjusted until the duty ratio of the grating meets the manufacturing requirements.

[0100] In addition, the logic instructions in the above-mentioned memory 803 can be implemented in the form of a software functional unit and can be stored in a computer-readable storage medium when it is sold or used as an independent product. Based on such an understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art or the part of the technical solution, can be embodied in the form of a software product, and the computer software product is stored in a storage medium, including several instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present invention. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk and other media that can store program codes.

[0101] The present embodiment discloses a computer program product, which includes a computer program stored on a non-transitory computer-readable storage medium, and the computer program includes program instructions. When the program instructions are executed by a computer, the computer can execute the methods provided by the above-mentioned method embodiments, for example, including: after exposure and development, obtaining the duty ratio of the grating; if the duty ratio of the grating does not meet the manufacturing requirements, micro-adjusting the photoresist mask until the duty ratio of the grating meets the manufacturing requirements.

[0102] The present embodiment provides a computer-readable storage medium, which stores a computer program. The computer program enables the computer to execute the methods provided by the above-mentioned method embodiments, for example, including: after exposure and development, obtaining the duty ratio of the grating; if the duty ratio of the grating does not meet the manufacturing requirements, micro-adjusting the photoresist mask until the duty ratio of the grating meets the manufacturing requirements.

[0103] Those skilled in the art will appreciate that embodiments of the present invention may be provided as methods, systems, or computer program products. Therefore, the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0104] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0105] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0106] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0107] In the description of this specification, the description with reference to the terms "one embodiment", "a specific embodiment", "some embodiments", "for example", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0108] The specific embodiments described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A method for adjusting a grating, characterized in that: include: After exposure and development, the duty ratio of the grating is obtained; If the duty ratio of the grating does not meet the manufacturing requirements, micro-adjusting the photoresist mask until the duty ratio of the grating meets the manufacturing requirements; Wherein, the micro-adjustment of the photoresist mask comprises: The shape of the ion beam etching the photoresist mask is controlled by a baffle to obtain a grating with a variable duty ratio; wherein the baffle has a hollow structure, and the width of the hollow structure in the moving direction of the photoresist mask is different; The micro-adjustment of the photoresist mask includes: performing micro-adjustment of the photoresist mask in multiple times to gradually approach the target duty ratio.

2. The method according to claim 1, characterized in that Obtaining the duty ratio of the grating of the photoresist mask includes: Acquiring a three-dimensional surface image of the photoresist mask; The duty ratio of the grating is obtained based on the three-dimensional surface map of the photoresist mask.

3. The method according to claim 1, characterized in that The micro-adjusting of the photoresist mask until the duty ratio of the grating meets the manufacturing requirements includes: After each micro-adjustment of the photoresist mask, the duty ratio of the grating is reacquired; If the absolute value of the difference between the duty ratio of the grating and the target duty ratio is greater than a preset value, the photoresist mask continues to be micro-adjusted.

4. The method according to claim 3, characterized in that The continuing to perform micro-adjustment on the photoresist mask comprises: The parameters of the plasma ashing machine are adjusted to reduce the amount of adjustment to the photoresist mask.

5. The method according to claim 1, characterized in that Also includes: After the microscopic adjustment of the photoresist mask is completed, the substrate of the photoresist mask is etched to transfer the shape of the grating mask to the substrate.

6. The method according to any one of claims 1 to 5, characterized in that: The microscopic adjustment is a nanometer-level microscopic adjustment.

7. A grating adjustment system, characterized in that: include: An acquisition module, used for acquiring the duty ratio of the grating after exposure and development; An adjustment module, used for, after the duty ratio of the grating does not meet the manufacturing requirements, micro-adjusting the photoresist mask until the duty ratio of the grating meets the manufacturing requirements; The adjustment module is specifically used to control the shape of the ion beam etching the photoresist mask through a baffle to obtain a grating with a variable duty ratio; wherein the baffle has a hollow structure, and the width of the hollow structure in the moving direction of the photoresist mask is different; The adjustment module is specifically used to perform microscopic adjustments on the photoresist mask in multiple times to gradually approach the target duty ratio.

8. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 6 are implemented.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 6 are implemented.

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