A TFT panel structure and its process for preventing high-temperature leakage current

Abstract

The present invention relates to a TFT panel structure for preventing high-temperature leakage current and its manufacturing process. The TFT panel structure includes a glass substrate, a COM electrode located on the glass substrate, a first insulating layer located on the glass substrate and covering the COM electrode, a plurality of data lines located on the first insulating layer and distributed at equal intervals, a pixel electrode located on the first insulating layer and disposed between two adjacent data lines, and a second insulating layer located on the first insulating layer and completely covering the data lines and the pixel electrode. The second insulating layer includes convex steps located above each data line and a concave region located on the pixel electrode and disposed between two adjacent convex steps. The TFT panel structure body further includes pixel ITO located in each concave region. This structure can avoid the phenomenon of high-temperature leakage current, thereby preventing the occurrence of leakage current and avoiding the blurring of the electronic paper. The structure is simple, highly practical, and improves the reliability and lifespan of the product.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic paper manufacturing, and in particular to a TFT panel structure and its process for preventing high-temperature leakage current. Background Art

[0002] Electronic paper (also known as digital paper) combines the characteristics of ordinary paper for displaying information with those of a computer display screen. Since existing printed products mainly use paper, with the rapid increase in paper consumption, it has caused great damage to the environment. Electronic paper can reflect the display characteristics of paper and can be reused, so it does not cause great damage to the environment, and electronic paper can display dynamic images, so electronic paper is considered likely to replace existing paper documents in the near future.

[0003] The electronic paper ink screen display has the characteristics of ultra-low power consumption, low-frequency display, and power saving, and has a wide application market in fields such as price tags, educational tablets, and bus stops. As electronic paper is increasingly attractive to end customers, optimizing the TFT panel structure design to optimize panel performance has become an important means to enhance product competitiveness.

[0004] With the diversification of end customers' product requirements, higher requirements have been derived for the development of electronic paper TFT panels. The existing mainstream electronic paper architecture mainly includes a glass substrate, a TFT circuit, an OCA adhesive, an electronic paper film, and an ITO film layer; in this structure, the OCA adhesive (optical transparent adhesive) between the electronic paper film and the pixel ITO has micro-conductivity in a high-temperature environment above 40°C. Therefore, when conducting an RA test related to high temperature, the voltage existing between adjacent pixels will leak out through the optical transparent adhesive, that is, the phenomenon of leakage current occurs, resulting in the electronic paper becoming blurred, and further affecting the display quality. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to provide a TFT panel structure and its process for preventing high-temperature leakage current, which has a simple structure, can prevent the occurrence of leakage current phenomenon, and thus avoid the blurring of electronic paper.

[0006] The technical solution adopted by the present invention is a TFT panel structure for preventing high-temperature leakage current, which includes a TFT panel structure body. The TFT panel structure body includes a glass substrate, a COM electrode located on the glass substrate, a first insulating layer located on the glass substrate and covering the COM electrode, a plurality of data lines located on the first insulating layer and distributed at equal intervals, a pixel electrode located on the first insulating layer and disposed between two adjacent data lines, and a second insulating layer located on the first insulating layer and completely covering the data lines and the pixel electrode. The second insulating layer includes a convex step located above each data line and a concave region located on the pixel electrode and disposed between two adjacent convex steps. The TFT panel structure body further includes a pixel ITO located in each concave region, and the distance between the upper surface of the pixel ITO and the bottom surface of the glass substrate is less than or equal to the distance between the upper surface of the convex step and the bottom surface of the glass substrate.

[0007] The beneficial effects of the present invention are as follows: In the TFT panel structure with the above structure, a convex step is provided above each data line, and in the concave region between two convex steps, the pixel ITO is disposed in the concave region, and the distance between the upper surface of the pixel ITO and the bottom surface of the glass substrate is less than or equal to the distance between the upper surface of the convex step and the bottom surface of the glass substrate. The convex step in this structure plays an insulating and isolating role for two adjacent pixel ITOS, which can prevent a voltage difference from forming between two adjacent pixel ITOS, avoid the occurrence of high-temperature leakage current, thereby preventing the occurrence of leakage current and avoiding the blurring of the electronic paper. This structure is simple, highly practical, and improves the reliability and lifespan of the product.

[0008] Preferably, the bottom surface of the pixel ITO is in contact with the upper surface of the pixel electrode. With this structure, the second insulating layer between the pixel ITO and the pixel electrode can be thinned to zero, and the pixel ITO is directly disposed on the upper surface of the pixel electrode, and the distance between the upper surface of the pixel ITO and the bottom surface of the glass substrate is less than or equal to the distance between the upper surface of the convex step and the bottom surface of the glass substrate. This structure can prevent a voltage difference from forming between two adjacent pixel ITOS, avoid the occurrence of high-temperature leakage current, thereby preventing the occurrence of leakage current and avoiding the blurring of the electronic paper. This structure is simple, highly practical, and improves the reliability and lifespan of the product.

[0009] Preferably, the second insulating layer further includes a support portion located between the pixel ITO and the pixel electrode. With this structure, the pixel ITO is disposed on the upper surface of the support portion of the second insulating layer. This structure can prevent a voltage difference from forming between two adjacent pixel ITOS, avoid the occurrence of high-temperature leakage current, thereby preventing the occurrence of leakage current and avoiding the blurring of the electronic paper. This structure is simple, highly practical, and improves the reliability and lifespan of the product, and also saves costs.

[0010] Preferably, the distance between the upper surface of the convex step and the bottom surface of the glass substrate is greater than the distance between the upper surface of the pixel electrode and the bottom surface of the glass substrate. With this structure, by setting the distance between the upper surface of the convex step and the bottom surface of the glass substrate to be greater than the distance between the upper surface of the pixel electrode and the bottom surface of the glass substrate, a recessed area can be formed between the two convex steps. This structure is simple and the process is convenient.

[0011] Preferably, the TFT panel structure body further includes an OCA optical adhesive covering the second insulating layer and the pixel ITO, and an electronic paper film located on the upper surface of the OCA optical adhesive. With this structure, the OCA optical adhesive is covered on the second insulating layer and the pixel ITO, and then the electronic paper film is covered on the OCA optical adhesive. This structure is simple and realizes the display function of the electronic paper ink screen.

[0012] A process for manufacturing a TFT panel structure for preventing high-temperature leakage current, which process includes the following steps:

[0013] (1). Take a cleaned glass substrate, deposit a metal molybdenum film or a molybdenum-aluminum film on the cleaned glass substrate by physical vapor deposition process, then coat a photoresist. After the photoresist undergoes a mask exposure process, then remove the residual photoresist, etch to form a gate electrode and a COM electrode on the glass substrate, and then use chemical vapor deposition process to deposit a first insulating layer on the surface of the glass substrate on which the gate electrode and the COM electrode are formed;

[0014] (2). Use chemical vapor deposition process to deposit a semiconductor thin film over the entire surface of the first insulating layer, then coat a photoresist. The photoresist undergoes a mask exposure process, then remove the residual photoresist, and etch to form a semiconductor layer on the first insulating layer;

[0015] (3). Use physical vapor deposition process to deposit a molybdenum film or a molybdenum-aluminum-molybdenum film over the entire surface, then coat a photoresist. The photoresist undergoes a mask exposure process, then remove the residual photoresist, and etch to form a TFT source electrode, a TFT drain electrode, and a pixel electrode on the first insulating layer;

[0016] (4). After forming the TFT source electrode, the TFT drain electrode, and the pixel electrode, use chemical vapor deposition process to coat a second insulating layer over the entire surface, then coat a photoresist, perform mask exposure using a halftone process, then remove the residual photoresist, form a second insulating layer with convex steps, and finally, through an etching process, etch out a recessed area between every two adjacent convex steps;

[0017] (5) Use magnetron sputtering to laminate an ITO thin film, then coat a photoresist. After the photoresist undergoes mask exposure, remove the residual photoresist, and then, through an etching process, etch out pixel ITO in each recessed area.

[0018] Using the above process for manufacturing a TFT panel structure for preventing high-temperature leakage current, the process method is simple, can manufacture a TFT panel structure for preventing high-temperature leakage current, and has high production efficiency.

[0019] Preferably, in step (5), before depositing the ITO film by magnetron sputtering, an organic epoxy resin coating layer is deposited on the second insulating layer, and its thickness range is 1-2 μm. Adopting this structure can improve the reliability of the product. Brief Description of the Drawings

[0020] Figure 1 It is a top view of a TFT panel structure for preventing high-temperature leakage current in Embodiment 1 of the present invention;

[0021] Figure 2 It is Figure 1 a cross-sectional view taken along line b-b in

[0022] Figure 3 It is Figure 1 a cross-sectional view taken along line a-a in

[0023] Figure 4 It is a top view of a TFT panel structure for preventing high-temperature leakage current in Embodiment 2 of the present invention;

[0024] Figure 5 It is Figure 4 a cross-sectional view taken along line c-c in

[0025] As shown in the figure: 1. Glass substrate; 2. COM electrode; 3. First insulating layer; 4. Data line; 5. Pixel electrode; 6. Electronic paper film; 7. Second insulating layer; 8. Convex step; 9. Concave region; 10. Pixel ITO; 11. Support part; 12. OCA optical adhesive; 13. Gate; 14. Semiconductor layer. Detailed Embodiment

[0026] The following further describes the invention by referring to the drawings and in combination with specific embodiments, so that those skilled in the art can implement it according to the description in the specification. The protection scope of the present invention is not limited to this specific embodiment.

[0027] Those skilled in the art should understand that in the disclosure of the present invention, the orientation or positional relationships indicated by the terms "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. are based on the orientation or positional relationships shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, the above terms should not be construed as limitations to the present invention.

[0028] Example 1:

[0029] An embodiment of the present invention provides a TFT panel structure for preventing high-temperature leakage current, as Figure 1 shown, including the TFT panel structure body, as Figure 2 shown, the TFT panel structure body includes a glass substrate 1, a COM electrode 2 located on the glass substrate 1, a first insulating layer 3 located on the glass substrate 1 and covering the COM electrode 2, a plurality of data lines 4 located on the first insulating layer 3 and equally spaced, a pixel electrode 5 located on the first insulating layer 3 and disposed between two adjacent data lines 4, and a second insulating layer 7 located on the first insulating layer 3 and completely covering the data lines 4 and the pixel electrode 5. The second insulating layer 7 includes a convex step 8 above each data line 4 and a concave region 9 located on the pixel electrode 5 and disposed between two adjacent convex steps 8. The TFT panel structure body further includes a pixel ITO 10 in each concave region 9, and the distance between the upper surface of the pixel ITO 10 and the bottom surface of the glass substrate 1 is less than or equal to the distance between the upper surface of the convex step 8 and the bottom surface of the glass substrate 1. Figure 2 Among them, the distance between the upper surface of the pixel ITO 10 and the bottom surface of the glass substrate 1 is less than the distance between the upper surface of the convex step 8 and the bottom surface of the glass substrate 1, that is, the pixel ITO 10 is deeply recessed between two convex steps 8; the distance between the upper surface of the pixel ITO 10 and the bottom surface of the glass substrate 1 may also be equal to the distance between the upper surface of the convex step 8 and the bottom surface of the glass substrate 1, that is, the upper surface of the pixel ITO 10 is flush with the upper surface of the convex step 8.

[0030] Figure 1 In the TFT panel structure of, a convex step 8 is provided above each data line 4, and in the concave region 9 between two convex steps 8, the pixel ITO 10 is disposed in the concave region 9, and the distance between the upper surface of the pixel ITO 10 and the bottom surface of the glass substrate 1 is less than or equal to the distance between the upper surface of the convex step 8 and the bottom surface of the glass substrate 1. The convex step 8 in this structure plays an insulating and isolating role for two adjacent pixel ITOs 10, which can prevent a voltage difference from being formed between two adjacent pixel ITOs 10, avoid the occurrence of high-temperature leakage current, thereby preventing the occurrence of leakage, avoiding the situation of the electronic paper becoming blurred. This structure is simple, highly practical, improves the reliability and lifespan of the product. This structure improves the pixel leakage characteristics at high temperature without increasing the number of mask plates, and enhances the product competitiveness.

[0031] As Figure 1 shown, the second insulating layer 7 further includes a support portion 11 between the pixel ITO 10 and the pixel electrode 5. Figure 1In this case, the film thickness of the second insulating layer 7 is 5500 nm, and the thickness range of the support portion 11 is greater than zero and less than or equal to 500 nm; the pixel ITO 10 is disposed on the upper surface of the support portion 11 of the second insulating layer 7. This structure can prevent the formation of a voltage difference between two adjacent pixel ITOs 10, avoid the phenomenon of high-temperature leakage current, thus preventing the occurrence of leakage current and avoiding the blurring of the electronic paper. This structure is simple, highly practical, improves the reliability and lifespan of the product, and saves costs.

[0032] As Figure 1 shown, the distance between the upper surface of the convex step 8 and the bottom surface of the glass substrate 1 is greater than the distance between the upper surface of the pixel electrode 5 and the bottom surface of the glass substrate 1. With this structure, by setting the distance between the upper surface of the convex step 8 and the bottom surface of the glass substrate 1 to be greater than the distance between the upper surface of the pixel electrode 5 and the bottom surface of the glass substrate 1, a recessed area 9 can be formed between two convex steps 8. This structure is simple and the process is convenient.

[0033] As Figure 1 shown, the TFT panel structure body further includes an OCA optical adhesive 12 covering the second insulating layer 7 and the pixel ITO 10, and an electronic paper film 6 located on the upper surface of the OCA optical adhesive 12. With this structure, the OCA optical adhesive 12 is covered on the second insulating layer 7 and the pixel ITO 10, and then the electronic paper film 6 is covered on the OCA optical adhesive 12. This structure is simple and realizes the display function of the electronic paper ink screen.

[0034] A process for manufacturing a TFT panel structure to prevent high-temperature leakage current, the process comprising the following steps:

[0035] (1). Take a cleaned glass substrate 1, deposit a metal molybdenum film or a molybdenum-aluminum film on the cleaned glass substrate 1 by physical vapor deposition process, then coat a photoresist. After the photoresist undergoes a mask exposure process, the residual photoresist is then removed, and a gate 13 and a COM electrode 2 are etched on the glass substrate 1. Then, a first insulating layer 3 is deposited on the surface of the glass substrate 1 on which the gate 13 and the COM electrode 2 are formed by chemical vapor deposition process;

[0036] (2). Deposit a semiconductor thin film on the entire surface of the first insulating layer 3 by chemical vapor deposition process, then coat a photoresist. After the photoresist undergoes a mask exposure process, the residual photoresist is then removed, and a semiconductor layer 14 is etched on the first insulating layer 3;

[0037] (3). Deposit a molybdenum film or a molybdenum-aluminum-molybdenum film on the entire surface by physical vapor deposition process, then coat a photoresist. After the photoresist undergoes a mask exposure process, the residual photoresist is then removed, and a TFT source electrode, a TFT drain electrode, and a pixel electrode are etched on the first insulating layer 3;

[0038] (4) After forming the TFT source electrode, TFT drain electrode, and pixel electrode, the second insulating layer 7 is coated over the entire surface using a chemical vapor deposition process. Then, photoresist is applied, and halftone process is used for mask exposure. After that, the residual photoresist is removed to form the second insulating layer 7 with convex steps 8. There are support portions 11 left between the convex steps 8 of the second insulating layer 7, and a recessed area 9 is etched on the support portions 11 using an etching process.

[0039] (5) The ITO film is laminated using magnetron sputtering. Then, photoresist is applied. After mask exposure of the photoresist, the residual photoresist is removed. Then, pixel ITO 10 is etched in each recessed area 9 through an etching process.

[0040] Adopting the above process for manufacturing a TFT panel structure for preventing high-temperature leakage current, this process method is simple, can manufacture a TFT panel structure for preventing high-temperature leakage current, and has high production efficiency.

[0041] In step (5), before laminating the ITO film using magnetron sputtering, an organic epoxy resin coating layer with a thickness range of 1 - 2 um is coated on the second insulating layer 7. Adopting this structure can improve the reliability of the product.

[0042] Embodiment 2:

[0043] An embodiment of the present invention provides a TFT panel structure for preventing high-temperature leakage current. As Figure 2 shown, it includes a TFT panel structure body. The TFT panel structure body includes a glass substrate 1, a COM electrode 2 located on the glass substrate 1, a first insulating layer 3 located on the glass substrate 1 and covering the COM electrode 2, a plurality of data lines 4 located on the first insulating layer 3 and equally spaced, a pixel electrode 5 located on the first insulating layer 3 and disposed between two adjacent data lines 4, and a second insulating layer 7 located on the first insulating layer 3 and completely covering the data lines 4 and pixel electrode 5. The second insulating layer 7 includes convex steps 8 above each data line 4 and a recessed area 9 located on the pixel electrode 5 and disposed between two adjacent convex steps 8. The TFT panel structure body further includes pixel ITO 10 in each recessed area 9. The distance between the upper surface of the pixel ITO 10 and the bottom surface of the glass substrate 1 is less than or equal to the distance between the upper surface of the convex step 8 and the bottom surface of the glass substrate 1.

[0044] Figure 1In the TFT panel structure, a convex step 8 is provided above each data line 4, and in the recessed area 9 between two convex steps 8, the pixel ITO 10 is disposed in the recessed area 9, and the distance between the upper surface of the pixel ITO 10 and the bottom surface of the glass substrate 1 is less than or equal to the distance between the upper surface of the convex step 8 and the bottom surface of the glass substrate 1. The convex step 8 in this structure plays an insulating and isolating role for two adjacent pixel ITOs 10, which can prevent a voltage difference from being formed between two adjacent pixel ITOs 10, avoid the phenomenon of high-temperature leakage current, thus preventing the occurrence of leakage current and avoiding the situation of the electronic paper becoming blurred. This structure is simple, highly practical, improves the reliability and lifespan of the product. Without increasing the number of mask plates, this structure improves the pixel leakage characteristics at high temperatures and enhances the competitiveness of the product.

[0045] As Figure 2 shown, the bottom surface of the pixel ITO 10 is in contact with the upper surface of the pixel electrode 5. Figure 2 In this case, the second insulating layer 7 between the pixel ITO 10 and the pixel electrode 5 has been partially thinned to zero, and the pixel ITO 10 is directly disposed on the upper surface of the pixel electrode 5, and the distance between the upper surface of the pixel ITO 10 and the bottom surface of the glass substrate 1 is less than or equal to the distance between the upper surface of the convex step 8 and the bottom surface of the glass substrate 1. This structure can prevent a voltage difference from being formed between two adjacent pixel ITOs 10, avoid the phenomenon of high-temperature leakage current, thus preventing the occurrence of leakage current and avoiding the situation of the electronic paper becoming blurred. This structure is simple, highly practical, and improves the reliability and lifespan of the product.

[0046] As Figure 2 shown, the distance between the upper surface of the convex step 8 and the bottom surface of the glass substrate 1 is greater than the distance between the upper surface of the pixel electrode 5 and the bottom surface of the glass substrate 1. Adopting this structure and setting the distance between the upper surface of the convex step 8 and the bottom surface of the glass substrate 1 to be greater than the distance between the upper surface of the pixel electrode 5 and the bottom surface of the glass substrate 1 can satisfy the formation of the recessed area 9 between two convex steps 8. This structure is simple and the process is convenient.

[0047] As Figure 2 shown, the TFT panel structure body further includes an OCA optical adhesive 12 covering the second insulating layer 7 and the pixel ITO 10 and an electronic paper film 6 located on the upper surface of the OCA optical adhesive 12. Adopting this structure, covering the OCA optical adhesive 12 on the second insulating layer 7 and the pixel ITO 10, and then covering the electronic paper film 6 on the OCA optical adhesive 12, this structure is simple and realizes the display function of the electronic paper ink screen.

[0048] A process for manufacturing a TFT panel structure for preventing high-temperature leakage current, the process comprising the following steps:

[0049] (1). Take the cleaned glass substrate 1, deposit a molybdenum film or a molybdenum-aluminum film on the cleaned glass substrate 1 by physical vapor deposition process, then coat photoresist. After the photoresist undergoes a mask exposure process, then remove the residual photoresist, etch to form a gate 13 and a COM electrode 2 on the glass substrate 1, and then use chemical vapor deposition process to deposit a first insulating layer 3 on the surface of the glass substrate 1 formed with the gate 13 and the COM electrode 2;

[0050] (2). Use chemical vapor deposition process to deposit a semiconductor thin film on the entire surface of the first insulating layer 3, then coat photoresist. The photoresist undergoes a mask exposure process, and then remove the residual photoresist, etch to form a semiconductor layer 14 on the first insulating layer 3;

[0051] (3). Use physical vapor deposition process to deposit a molybdenum film or a molybdenum-aluminum-molybdenum film on the entire surface, then coat photoresist. The photoresist undergoes a mask exposure process, and then remove the residual photoresist, etch to form a TFT source electrode, a TFT drain electrode, and a pixel electrode on the first insulating layer 3;

[0052] (4). After forming the TFT source electrode, the TFT drain electrode, and the pixel electrode, use chemical vapor deposition process to coat a second insulating layer 7 on the entire surface, then coat photoresist, perform mask exposure using a halftone process, and then remove the residual photoresist, form a second insulating layer 7 with a convex step 8. Between every two adjacent convex steps 8, etch to form a recessed area 9 by an etching process, and the recessed area 9 is directly located on the upper surface of the pixel electrode 5;

[0053] (5). Use magnetron sputtering to deposit an ITO film, then coat photoresist. After the photoresist undergoes mask exposure, remove the residual photoresist, and then etch to form pixel ITO 10 in each recessed area 9 by an etching process, so that the bottom surface of the pixel ITO 10 is in contact with the pixel electrode 5.

[0054] Adopt the above process for manufacturing a TFT panel structure for preventing high-temperature leakage current. This process method is simple, can manufacture a TFT panel structure for preventing high-temperature leakage current, and has high production efficiency.

[0055] In step (5), before using magnetron sputtering to deposit an ITO film, deposit an organic epoxy resin coating layer on the second insulating layer 7, and its thickness range is 1 - 2 um. Adopting this structure can improve the reliability of the product.

Claims

1. A TFT panel structure for preventing high-temperature leakage, comprising a TFT panel structure body, characterized in that: The TFT panel structure body comprises a glass substrate (1), a COM electrode (2) located on the glass substrate (1), a first insulating layer (3) located on the glass substrate (1) and covering the COM electrode (2), a plurality of data lines (4) located on the first insulating layer (3) and distributed at equal intervals, a pixel electrode (5) located on the first insulating layer (3) and arranged between two adjacent data lines (4), and a second insulating layer (7) located on the first insulating layer (3) and completely covering the data lines (4), the second insulating layer (7) comprising a convex step (8) located above each data line (4) and a concave region (9) located on the pixel electrode (5) and arranged between two adjacent convex steps (8), the TFT panel structure body further comprising a pixel ITO (10) located in each concave region (9), the distance between the upper surface of the pixel ITO (10) and the bottom surface of the glass substrate (1) being less than or equal to the distance between the upper surface of the convex step (8) and the bottom surface of the glass substrate (1).

2. The TFT panel structure for preventing high-temperature leakage according to claim 1, wherein: The bottom surface of the pixel ITO (10) is in contact with the upper surface of the pixel electrode (5).

3. The TFT panel structure for preventing high-temperature leakage according to claim 1, wherein: The second insulating layer (7) further includes a supporting portion (11) located between the pixel ITO (10) and the pixel electrode (5).

4. A TFT panel structure for preventing high-temperature leakage according to claim 2 or claim 3, characterized in that: The distance between the upper surface of the convex step (8) and the bottom surface of the glass substrate (1) is greater than the distance between the upper surface of the pixel electrode (5) and the bottom surface of the glass substrate (1).

5. The TFT panel structure for preventing high-temperature leakage according to claim 4, characterized in that: The TFT panel structure body further includes an OCA optical adhesive (12) covering the second insulating layer (7) and the pixel ITO (10), and an electronic paper film (6) located on the upper surface of the OCA optical adhesive (12).

6. A process for manufacturing a TFT panel structure for preventing high-temperature leakage according to any one of claims 1 to 5, the process comprising the following steps: (1) A clean glass substrate (1) is taken, a metal molybdenum film or a molybdenum aluminum film is plated on the clean glass substrate (1) using a physical vapor deposition process, and then a photoresist is applied. After the photoresist is subjected to a mask exposure process, the residual photoresist is removed, and a gate (13) and a COM electrode (2) are etched on the glass substrate (1), and then a first insulating layer (3) is plated on the surface of the glass substrate (1) on which the gate (13) and the COM electrode (2) are formed using a chemical vapor deposition process; (2) using a chemical vapor deposition process to deposit a semiconductor thin film on the entire surface of the first insulating layer (3), then coating it with a photoresist, subjecting the photoresist to a mask exposure process, then removing the remaining photoresist, and etching the first insulating layer (3) to form a semiconductor layer (14); (3) using a physical vapor deposition process to deposit a molybdenum film or a molybdenum-aluminum-molybdenum film on the entire surface, and then coating a photoresist, the photoresist undergoes a mask exposure process, and then removes the residual photoresist, and etches on the first insulating layer (3) to form a TFT source electrode, a TFT drain electrode, and a pixel electrode; (4) After forming the TFT source, TFT drain and pixel electrode, a second insulating layer (7) is coated on the entire surface using a chemical vapor deposition process, and then a photoresist is applied. A mask exposure is performed using a halftone process, and then the residual photoresist is removed to form a second insulating layer (7) with a convex step (8). Finally, a concave area (9) is etched between each two adjacent convex steps (8) through an etching process; (5) Magnetron sputtering is used to stack the ITO thin film, and then photoresist is applied. After the photoresist is exposed through a mask, the residual photoresist is removed, and then the pixel ITO (10) is etched in each recessed area (9) through an etching process.

7. The process for manufacturing a TFT panel structure for preventing high-temperature leakage according to claim 6, wherein: In step (5), before laminating the ITO thin film by magnetron sputtering, an organic epoxy resin coating layer is plated on the second insulating layer (7), and the thickness thereof is in the range of 1-2 μm.

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