An InGaAs high-strain temperature-variable quantum well high-power laser epitaxial wafer and its preparation method
By introducing multiple groups of stress transition layers with gradually increasing In content and GaAs material links in the InGaAs quantum well, combined with low-temperature growth technology, the problem of InGaAs quantum well stress release was solved, achieving high-quality growth and high-efficiency laser performance.
CN115249947BActive Publication Date: 2025-10-14Shandong Huaguang Optoelectronics Co. Ltd.
Patent Information
- Application Number
- CN202110450072.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2021-04-25
- Publication Date
- 2025-10-14
- Estimated Expiration
- 2041-04-25
AI Technical Summary
Technical Problem
Existing technologies make it difficult to effectively release stress in InGaAs quantum wells, resulting in poor quantum well growth quality and affecting laser performance.
Method used
By using multiple groups of InGaAs stress transition layers with gradually increasing In content and GaAs material links, combined with low-temperature growth technology and temperature-increasing growth methods, stress is gradually released and the quality of the growth interface is improved.
Benefits of technology
The growth of high-quality InGaAs high-strain quantum wells was achieved, which improved the power and efficiency of the laser and ensured the high-reliability output of the laser.
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Abstract
The application provides an InGaAs high-strain variable-temperature quantum well high-power laser epitaxial wafer and a preparation method thereof. The laser epitaxial wafer comprises, from bottom to top, a substrate, a buffer layer, a lower confinement layer, a waveguide layer 1, an InGaAs transition layer, a GaAs transition layer 1, an InGaAs transition layer, a GaAs transition layer 2, an InGaAs transition layer, an InGaAs quantum well, a GaAs transition layer 3, an InGaAs transition layer, a GaAs transition layer 4, an InGaAs transition layer, a waveguide layer 2, an upper confinement layer and a surface layer. y1 Ga 1‑y1 As transition layer, GaAs transition layer 1, In y2 Ga 1‑y2 As transition layer, GaAs transition layer 2, In y3 Ga 1‑ y3 As quantum well, GaAs transition layer 3, In y4 Ga 1‑y4 As transition layer, GaAs transition layer 4, In y5 Ga 1‑y5 As transition layer, waveguide layer 2, upper confinement layer and surface layer. The laser epitaxial wafer structure and the growth method can provide a good interface for quantum well growth, reduce the impurity content in the quantum well material, form stable two-dimensional growth, fully release the quantum well stress, realize the growth of high-quality InGaAs high-strain quantum well epitaxial material, and further realize the high-power, high-efficiency and high-reliability output of the laser.
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Citation Information
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