W-band power-tolerant cryogenic receiver front-end device

Abstract

The embodiment of the application discloses a W-waveband power-resistant cryogenic receiving front-end device, which comprises a cryogenic feed network, a cryogenic high-power isolation switch, a cryogenic amplifier, a first 4K-50K thermal insulation waveguide, a second 4K-50K thermal insulation waveguide, a 50K-300K thermal insulation waveguide and a vacuum refrigeration system. The 4K-50K-300K temperature zone separation is completed through the multi-stage heat sink transition heat insulation and the multi-layer flexible heat conduction, the extremely low temperature of the cryogenic amplifier 4K is guaranteed, the heat dissipation problem of the high-power isolation switch and the influence of the heat power on the working temperature zone maintenance of other devices are solved, and an effective solution is provided for solving the problem that the high noise of the millimeter wave frequency band receiver and the insufficient power resistance of the millimeter wave radar system are difficult to meet the application requirements of the super-long distance high-resolution imaging of the millimeter wave radar system.

Description

TECHNICAL FIELD

[0001] The application relates to low-temperature electronic device technology, in particular to a W-waveband power-resistant low-temperature receiving front-end device. BACKGROUND

[0002] At present, most of the W-waveband receiving front-end devices are normal-temperature devices, the noise coefficients of which are large (more than 8 dB), and the power resistance of which is low (less than 10 W), so the devices cannot meet the requirements of millimeter wave radar system super-long distance high-resolution imaging. The millimeter wave frequency band has advantages of higher resolution, larger bandwidth and higher transmission rate in super-long distance imaging. For a radar receiver, on one hand, the weak signal reflected by a target needs to be received with high sensitivity, and on the other hand, the transmitted leakage power needs to be effectively isolated to prevent burning. SUMMARY

[0003] The embodiment of the application provides a W-waveband power-resistant low-temperature receiving front-end device, which is applied to a radar receiving system, and can effectively improve the power resistance and high-sensitivity receiving capacity of the receiver to realize super-long distance high-resolution imaging detection.

[0004] The application provides a W-waveband power-resistant low-temperature receiving front-end device, which comprises a low-temperature feed source network, a low-temperature high-power isolation switch, a low-temperature amplifier, a first 4K-50K thermal insulation waveguide, a second 4K-50K thermal insulation waveguide, a 50K-300K thermal insulation waveguide and a vacuum refrigeration system.

[0005] In some embodiments, when a multi-temperature zone separation scheme is implemented, the output waveguide ports J1, J2 and J3 of the low-temperature feed source network are respectively connected with the input waveguide ports J4 of the 3-way low-temperature high-power isolation switch.

[0006] The input and output ports of the first 4K-50K thermal insulation waveguide are respectively connected with the output waveguide port J5 of the low-temperature high-power isolation switch and the input waveguide port J6 of the low-temperature amplifier.

[0007] One end of the second 4K-50K thermal insulation waveguide is connected with the output waveguide port J7 of the low-temperature amplifier, the other end is connected with the 50K-300K thermal insulation waveguide, and the other end of the 50K-300K thermal insulation waveguide is connected with the waveguide sealing window.

[0008] In some embodiments, when a 4K-50K temperature zone scheme is implemented, the low-temperature feed source network and the low-temperature high-power isolation switch both work in the 50K temperature zone, and the fixed heat conduction is achieved through the first multi-layer flexible heat conduction band, one end of the first multi-layer flexible heat conduction band is fixed with the 50K cold plate, and the other end is respectively fixed with the heat conduction surfaces of the low-temperature feed source network and the low-temperature high-power isolation switch.

[0009] The low-temperature feed network and the low-temperature high-power isolator are separated from the low-temperature amplifier by the first 4K-50K thermal isolation waveguide, and the temperature of 50K is maintained.

[0010] In some embodiments, in the implementation of the 4K-50K-300K temperature zone separation scheme, the low-temperature amplifier works in the 4K temperature zone, and is connected and fixed to the heat conduction surface of the 4K cold plate and the low-temperature amplifier by the second multi-layer flexible heat conduction band, so as to realize refrigeration and solve the performance deterioration problem caused by the gap of the connected waveguide port surface due to low-temperature deformation caused by direct fixation to the 4K cold plate.

[0011] The low-temperature amplifier is also separated from the low-temperature high-power isolator and the waveguide sealing window by the first 4K-50K thermal isolation waveguide, the second 4K-50K thermal isolation waveguide and the 50K-300K thermal isolation waveguide, respectively; wherein the interconnection end temperature zone of the second 4K-50K thermal isolation waveguide and the 50K-300K thermal isolation waveguide is 50K, one end surface of the second 4K-50K thermal isolation waveguide and one end surface of the 50K-300K thermal isolation waveguide are fixed on the 50K cold plate, which is a 4K-50K-300K temperature zone transition, and the temperature of 4K is maintained.

[0012] In some embodiments, in the implementation of the refrigeration or heat dissipation scheme of the low-temperature high-power isolator, the low-temperature high-power isolator works in the 50K temperature zone, and is composed of three stages of excitation type switch cascades, each stage of switch containing an input port, an input port, a magic T, an excitation coil, a load and a phase shift section.

[0013] In some embodiments, the vacuum refrigeration system comprises a vacuum Dewar, a refrigerator, a sealed wave-transparent window, a 4K cold plate, a 50K cold plate and a waveguide sealing window.

[0014] The vacuum Dewar main body is sealed by a Dewar sealing and bonding process, the top cover plate and the mounting side plate are integrally wire-cut processed from aluminum material, and are mounted on the vacuum Dewar main body through a sealing ring.

[0015] The waveguide sealing window, the refrigerator and the sealed wave-transparent window are connected to the vacuum Dewar main body through a sealing ring.

[0016] In some embodiments, the refrigerator comprises a first cold head and a second cold head.

[0017] The first cold head is in the 50K temperature zone and is connected to the 50K cold plate, and the second cold head is in the 4K temperature zone and is connected to the 4K cold plate.

[0018] In some embodiments, the low-temperature amplifier operating temperature zone is 4K, single-chip packaging integration is adopted, the cavity is made of aluminum alloy material, the inside and outside are plated with gold, the input and output ports are WR10 waveguide ports, the chip and the microstrip probe are welded on the cavity, the chip and the microstrip probe are connected through gold wire bonding, and the microstrip probe is made of ceramic material.

[0019] In some embodiments, the first 4K-50K thermal insulation waveguide, the second 4K-50K thermal insulation waveguide and the 50K-300K thermal insulation waveguide are all made of stainless steel material, the waveguide wall thickness is within 0.2mm, the inner wall of the waveguide is plated with gold, and the waveguide port is WR10.

[0020] The W-band power-resistant low-temperature receiving front-end device provided by the embodiment of the application realizes 4K-50K-300K temperature zone separation in the form of 4K-50K thermal insulation waveguide, 50K-300K thermal insulation waveguide and multi-layer flexible heat-conducting band, which not only guarantees the extremely low temperature maintenance of the low-temperature amplifier 4K, but also isolates the influence of the heat generated by the high-power isolation switch on the working temperature of other devices, solves the problems of low-temperature maintenance and low-noise reception of the system, and provides an effective solution to the problem that the high noise and insufficient power resistance of the millimeter wave frequency band receiver are difficult to meet the requirements of the millimeter wave radar system for super-long distance and high-resolution imaging application. BRIEF DESCRIPTION OF DRAWINGS

[0021] In order to more clearly illustrate the technical solutions of the embodiments of the application, the following will briefly introduce the drawings needed to be used in the embodiments of the application. Those skilled in the art can also obtain other drawings according to these drawings without creative labor.

[0022] Figure 1 is a structural schematic diagram of a W-band power-resistant low-temperature receiving front-end device provided by the embodiment of the application;

[0023] Figure 2 is a schematic diagram of a low-temperature high-power isolation switch composition model provided by the embodiment of the application. DETAILED DESCRIPTION

[0024] The features and exemplary embodiments of various aspects of the application will be described in detail below, in order to make the purposes, technical solutions and advantages of the application more clear and apparent, the following will further describe the application in combination with the drawings and embodiments. It should be understood that the specific embodiments described herein are configured to explain the application, and are not configured to limit the application. The application can be implemented without some of these specific details by those skilled in the art. The following description of the embodiments is merely to provide a better understanding of the application by showing examples of the application.

[0025] It is to be noted that the relative terms such as first and second and the like in this context are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between such entities or operations. Moreover, the terms "comprising", "including", or any other variant thereof are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but can also include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by an "includes" statement does not exclude the existence of additional identical elements in the process, method, article, or apparatus that includes the element.

[0026] At present, most of the W-band receiving front-end devices are normal temperature devices, and the noise figure is large (more than 8dB), and the power resistance is low (less than 10W), which cannot meet the requirements of millimeter wave radar system super long distance high resolution imaging.

[0027] The millimeter wave frequency band has the advantages of higher resolution, larger bandwidth and higher transmission rate in super long distance imaging.

[0028] For a radar receiver, on the one hand, the weak signal reflected by the target needs to be received with high sensitivity, and on the other hand, the leakage power of the transmitter must be effectively isolated to prevent burning.

[0029] In order to solve the above technical problems, the application provides a high-sensitivity anti-burning W-band power-resistant cryogenic receiving front-end device integrated by a low-temperature feed polarized network, a high-power isolation switch, a low-temperature amplifier and a vacuum refrigeration system. The device applied to the radar receiving system can effectively improve the power resistance and high sensitivity of the receiver to weak signals, and realize super long distance high resolution imaging detection.

[0030] The application aims to provide a W-band power-resistant cryogenic receiving front-end device with low noise figure and high power resistance, which realizes 4K-50K-300K temperature zone separation in the form of 4K-50K thermal isolation waveguide, 50K-300K thermal isolation waveguide and multi-layer flexible heat conducting band, which not only ensures the extremely low temperature maintenance of the low-temperature amplifier 4K, but also isolates the influence of the heat of the high-power isolation switch on the working temperature of other devices, solves the problems of low-temperature maintenance and low-noise reception of the system, and provides an effective solution to the problem that the millimeter wave frequency band receiver has high noise and insufficient power resistance, which is difficult to meet the application requirements of millimeter wave radar system super long distance high resolution imaging.

[0031] The technical solutions of the embodiments of the application will be described below with reference to the drawings.

[0032] Figure 1 is a structural schematic diagram of a W-band power-resistant cryogenic receiving front-end device provided by an embodiment of the present application.

[0033] Figure 1 In the figure, 1 is a cryogenic feed source polarization network, 2 is a cryogenic high-power isolation switch, 3 is a first 4K-50K thermal isolation waveguide, 5 is a second 4K-50K thermal isolation waveguide, 4 is a cryogenic amplifier, 6 is a 50K-300K thermal isolation waveguide, 7 is a waveguide sealing window, 8 is a first multilayer flexible heat conduction band, 9 is a second multilayer flexible heat conduction band, 10 is a 4K cold plate, 11 is a 50K cold plate, 12 is a vacuum Dewar, 13 is a refrigerator, and 14 is a sealed wave-transparent window.

[0034] Figure 2 is a schematic diagram of a model of a cryogenic high-power isolation switch provided by an embodiment of the present application.

[0035] Figure 2 In the figure, 15 is an input port, 16 is an output port, 17 is a magic T, 18 is an excitation coil, 19 is a load, and 20 is a phase-shifting section.

[0036] In combination with Figure 1 and Figure 2 , the W-band power-resistant cryogenic receiving front-end device includes a cryogenic feed source network 1, a cryogenic high-power isolation switch 2, a cryogenic amplifier 4, a first 4K-50K thermal isolation waveguide 3, a second 4K-50K thermal isolation waveguide 5, a 50K-300K thermal isolation waveguide 6, and a vacuum refrigeration system.

[0037] Specifically, the device includes 1 cryogenic feed source network 1, 3 cryogenic high-power isolation switches 2, 3 cryogenic amplifiers 4, 3 first 4K-50K thermal isolation waveguides 3, 3 second 4K-50K thermal isolation waveguides 5, 3 50K-300K thermal isolation waveguides 6, and 1 vacuum refrigeration system.

[0038] In some embodiments, when a multi-temperature-zone separation scheme is implemented, the output waveguide ports J1, J2, and J3 of the cryogenic feed source network 1 are respectively connected to the input waveguide ports J4 of the 3-way cryogenic high-power isolation switch 2.

[0039] The input and output ports of the first 4K-50K thermal isolation waveguide 3 are respectively connected to the output waveguide port J5 of the cryogenic high-power isolation switch 2 and the input waveguide port J6 of the cryogenic amplifier 4.

[0040] One end of the second 4K-50K thermal isolation waveguide 5 is connected to the output waveguide port J7 of the cryogenic amplifier 4, and the other end is connected to the 50K-300K thermal isolation waveguide 6, and the other end of the 50K-300K thermal isolation waveguide 6 is connected to the waveguide sealing window 7.

[0041] As shown in Figure 1As shown, the signal enters the low-temperature feed network 1 through the sealed wave-transparent window 14 and is output in three ways. After passing through the low-temperature high-power isolation switch 2, the signal is connected to the low-temperature amplifier 4 through the first 4K-50K thermal isolation waveguide 3. After amplification, the signal is output through the second 4K-50K thermal isolation waveguide 5, the 50K-300K thermal isolation waveguide 6, and the waveguide sealing window 7.

[0042] In some embodiments, when implementing the 4K-50K temperature zone scheme, the low-temperature feed network 1 and the low-temperature high-power isolation switch 2 both work in the 50K temperature zone. The first multi-layer flexible heat-conducting band 8 is connected and fixed for heat conduction. One end of the first multi-layer flexible heat-conducting band 8 is fixed to the 50K cold plate 11, and the other end is fixed to the heat-conducting surface of the low-temperature feed network 1 and the low-temperature high-power isolation switch 2, respectively. This achieves refrigeration and solves the problem of performance deterioration caused by the gap in the connection waveguide port surface due to low-temperature deformation caused by direct fixation to the 50K cold plate 11.

[0043] The low-temperature feed network 1 and the low-temperature high-power isolation switch 2 are connected to the low-temperature amplifier 4 through the first 4K-50K thermal isolation waveguide 3 to achieve temperature zone separation and maintain a 50K temperature.

[0044] In some embodiments, when implementing the 4K-50K-300K temperature zone separation scheme, the low-temperature amplifier 4 works in the 4K temperature zone. The second multi-layer flexible heat-conducting band 9 is connected and fixed to the heat-conducting surface of the 4K cold plate 10 and the low-temperature amplifier 4, respectively.

[0045] The low-temperature amplifier 4 is connected to the low-temperature high-power isolation switch 2 and the waveguide sealing window 7 through the first 4K-50K thermal isolation waveguide 3 and the 50K-300K thermal isolation waveguide 6, respectively, to achieve temperature zone separation. The temperature zone of the interconnection end of the second 4K-50K thermal isolation waveguide 5 and the 50K-300K thermal isolation waveguide 6 is 50K. One end face of the second 4K-50K thermal isolation waveguide and one end face of the 50K-300K thermal isolation waveguide are fixed on the 50K cold plate, which is a 4K-50K-300K temperature zone transition, to maintain a 4K temperature.

[0046] In some embodiments, in the implementation of the refrigeration or heat dissipation scheme of the low-temperature high-power isolating switch, the working temperature zone of the low-temperature high-power isolating switch 2 is 50K, which is composed of three-stage excitation switch cascades, each stage of switch contains an input port 15, an input port 16, a magic T 17, an excitation coil 18, a load 19 and a phase shift section 20. Its working principle is to realize the switching of the switch by changing the direction of the excitation current applied to the excitation coil 18 to reverse the excitation magnetic field, so as to achieve the effect of isolation. The excitation coil will emit a large amount of heat during the current conversion process, and at the same time the load 19 will also absorb most of the heat when the high power enters. The first multi-layer flexible heat-conducting band 8 is used to maintain its low temperature in the form of refrigeration and heat conduction to ensure that its power tolerance will not be reduced due to device heating; The loss of the isolating switch is mainly generated by the phase shift section 20, and the first multi-layer flexible heat-conducting band 8 is also used to maintain its low temperature in the form of refrigeration and heat conduction to reduce its introduced noise. The present application solves the problems of loss deterioration and power tolerance reduction caused by heating of high-power isolating switch through refrigeration and heat dissipation, and reduces the system introduced noise.

[0047] In some embodiments, the vacuum refrigeration system includes a vacuum Dewar 12, a refrigerator 13, a sealed wave-transparent window 14, a 4K cold plate 10, a 50K cold plate 11 and a waveguide sealing window 7.

[0048] The vacuum Dewar 12 body is sealed by a Dewar sealing and bonding process, the top cover plate and the mounting side plate are made of aluminum material and are integrally processed by wire cutting, and are mounted on the vacuum Dewar 12 body through a sealing ring.

[0049] The waveguide sealing window 7, the refrigerator 13 and the sealed wave-transparent window 14 are connected with the vacuum Dewar 12 body through a sealing ring.

[0050] In some embodiments, the refrigerator 13 includes a first-stage cold head and a second-stage cold head.

[0051] The first-stage cold head is a 50K temperature zone and is connected with the 50K cold plate 11, and the second-stage cold head is a 4K temperature zone and is connected with the 4K cold plate 10.

[0052] In some embodiments, the low-temperature amplifier 4 has a working temperature zone of 4K, adopts a single-chip packaging integration, the cavity is made of aluminum alloy material, the inside and outside are plated with gold, the input and output ports are WR10 waveguide ports, the chip and the microstrip probe are welded on the cavity, the chip and the microstrip probe are connected through a gold wire bonding, and the microstrip probe is made of ceramic material.

[0053] In some embodiments, the first 4K-50K thermal isolation waveguide 3, the second 4K-50K thermal isolation waveguide 5 and the 50K-300K thermal isolation waveguide 6 are all made of stainless steel material, the waveguide wall thickness is within 0.2mm, the waveguide inner wall is plated with gold, and the waveguide port is WR10.

[0054] In some embodiments, the low-temperature feed source polarization network operating temperature zone is 50K, an aluminum alloy material is used, the inner surface of the transmission path is plated with gold, the input end is a circular horn mouth surface, and the output end is a 3-way WR10 waveguide mouth.

[0055] The W-band power-resistant low-temperature receiving front-end device disclosed in the application integrates a low-temperature high-power isolation switch and a low-temperature feed source polarization network, operates in a 50K temperature zone, reduces the system noise introduced thereby, and solves the problems of system noise deterioration and power resistance reduction caused by the high heat generation of the high-power isolation switch; the application uses 4K-50K thermal isolation waveguides, 50K-300K thermal isolation waveguides and multi-layer flexible heat-conducting bands to realize 4K-50K-300K temperature zone separation, which not only ensures the extremely low temperature maintenance of the low-temperature amplifier at 4K, but also isolates the influence of the heat generation of the high-power isolation switch on the working temperature of other devices, and solves the problems of low-temperature maintenance and low-noise reception of the system.

[0056] Through actual tests, the technical scheme of the integration of the feed source polarization network, the high-power isolation switch, the low-temperature amplifier and the vacuum refrigeration system is adopted, the problems of high noise and insufficient power resistance of the millimeter wave frequency band receiver and the problem of the increase of the noise of the receiver caused by the heat generation of the high-power isolation switch are solved, the receiving sensitivity and the anti-burning capacity of the millimeter wave receiving front-end are effectively improved, the noise introduced by the isolation switch is improved by more than 70% than that of conventional devices, the noise of the receiving front-end device is better than 4dB (the noise of the conventional receiving front-end is more than 8dB), and the power resistance is better than 100W (the power resistance of the conventional receiving front-end is less than 10W).

[0057] The above is only a specific implementation of the application, and those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working process of the system, module and unit described above can refer to the corresponding process in the foregoing method embodiments, which will not be described here. It should be understood that the protection scope of the application is not limited to this, and any skilled person in the art can easily think of various equivalent modifications or replacements within the technical range disclosed in the application, and these modifications or replacements should be covered in the protection scope of the application.

Claims

1. A W-band power-resistant and low-temperature receiving front-end device, characterized in that: The device comprises a cryogenic feed network (1), a cryogenic high-power isolating switch (2), a cryogenic amplifier (4), a first 4K-50K thermal insulation waveguide (3), a second 4K-50K thermal insulation waveguide (5), a 50K-300K thermal insulation waveguide (6), and a vacuum refrigeration system; The output waveguide ports J1, J2, and J3 of the cryogenic feed network (1) are respectively connected to the input waveguide port J4 of the 3-way cryogenic high-power isolating switch (2); The input and output ports of the first 4K-50K thermal insulation waveguide (3) are respectively connected to the output waveguide port J5 of the low-temperature high-power isolation switch (2) and the input waveguide port J6 of the low-temperature amplifier (4); One end of the second 4K-50K thermal insulation waveguide (5) is connected to the output waveguide port J7 of the cryogenic amplifier (4), and the other end is connected to the 50K-300K thermal insulation waveguide (6), and the other end of the 50K-300K thermal insulation waveguide (6) is connected to the waveguide sealing window (7); The vacuum refrigeration system includes a vacuum dewar (12), a refrigerator (13), a sealed wave-transmitting window (14), a 4K cold plate (10), a 50K cold plate (11), and a waveguide sealing window (7); The vacuum dewar (12) body is vacuum-sealed using a dewar sealing bonding process, and the top cover plate and the mounting side plate are processed by integral wire cutting of metal aluminum and are mounted on the vacuum dewar (12) body via a sealing ring; The waveguide sealing window (7), the refrigerator (13), and the sealed wave-transmitting window (14) are connected to the main body of the vacuum dewar (12) via a sealing ring.

2. The device according to claim 1, characterized in that When implementing the 4K-50K temperature zone solution, the low-temperature feed network (1) and the low-temperature high-power isolating switch (2) both operate in the 50K temperature zone and are connected and fixed for heat conduction via a first multi-layer flexible heat-conducting tape (8), one end of the first multi-layer flexible heat-conducting tape (8) being fixed to the 50K cold plate (11), and the other end being fixed to the heat-conducting surface of the low-temperature feed network (1) and the low-temperature high-power isolating switch (2); The low-temperature feed network (1) and the low-temperature high-power isolating switch (2) are separated from the low-temperature amplifier (4) by a first 4K-50K thermal insulation waveguide (3), thereby achieving 50K temperature maintenance.

3. The device according to claim 1, characterized in that When implementing the 4K-50K-300K temperature zone separation solution, the low-temperature amplifier (4) operates in the 4K temperature zone and is connected and fixed to the 4K cold plate (10) and the heat-conducting surface of the low-temperature amplifier (4) respectively through the second multi-layer flexible heat-conducting belt (9); The low-temperature amplifier (4) is separated from the temperature zone between the low-temperature high-power isolation switch (2) and the waveguide sealing window (7) by the first 4K-50K thermal insulation waveguide (3), the second 4K-50K thermal insulation waveguide (5), and the 50K-300K thermal insulation waveguide (6); wherein the temperature zone of the interconnected end of the second 4K-50K thermal insulation waveguide (5) and the 50K-300K thermal insulation waveguide (6) is 50K, and one end face of the second 4K-50K thermal insulation waveguide (5) and one end face of the 50K-300K thermal insulation waveguide (6) are fixed on a 50K cold plate (11), which is a 4K-50K-300K temperature zone transition, thereby achieving 4K temperature maintenance.

4. The device according to claim 1, characterized in that When implementing a cooling or heat dissipation solution for a low-temperature high-power isolating switch, the low-temperature high-power isolating switch (2) has an operating temperature range of 50K and is composed of a cascade of three-stage excitation switches, each stage of which includes an input port (15), an input port (16), a magic T (17), an excitation coil (18), a load (19), and a phase shift section (20).

5. The device according to claim 1, characterized in that The refrigerator (13) includes a primary cold head and a secondary cold head; Among them, the first-level cold head is in the 50K temperature zone and is connected to the 50K cold plate (11), and the second-level cold head is in the 4K temperature zone and is connected to the 4K cold plate (10).

6. The device according to claim 1, characterized in that The low-temperature amplifier (4) has an operating temperature range of 4K and is integrated in a single-chip package. The cavity is made of aluminum alloy, and the inside and outside of the cavity are gold-plated. The input and output ports are both WR10 waveguide ports. The chip and microstrip probe are welded on the cavity. The chip and the microstrip probe are connected by gold wire bonding. The microstrip probe is made of ceramic material.

7. The device according to claim 1, characterized in that The first 4K-50K thermal insulation waveguide (3), the second 4K-50K thermal insulation waveguide (5), and the 50K-300K thermal insulation waveguide (6) are all made of stainless steel, the waveguide wall thickness is within 0.2 mm, the inner wall of the waveguide is gold-plated, and the waveguide port is WR10.

8. The device according to claim 1, characterized in that The low-temperature feed network (1) has an operating temperature range of 50K and is made of aluminum alloy. The inner surface of the transmission path is gold-plated. The input end is a circular horn mouth surface, and the output end is a 3-way WR10 waveguide port.

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