A method, device, equipment and readable medium for manufacturing a MEMS switch device

Abstract

The present invention provides a method, device, equipment and readable medium for manufacturing an ohmic contact MEMS switch device, the method comprising: preparing a contact electrode and a drive electrode on the surface of an insulating layer of a first substrate by mask etching, and coating the surfaces of the contact electrode and the drive electrode with a first single-layer graphene layer respectively by chemical vapor deposition; preparing a movable electrode on the surface of an insulating layer of a second substrate by mask etching, and coating the surface of the movable electrode with a second single-layer graphene layer by chemical vapor deposition; removing a preset portion of the insulating layer of the second substrate by wet etching; assembling the first substrate and the second substrate together by bonding to form an ohmic contact MEMS switch with a single-layer graphene coating. By using the solution of the present invention, the life of the MEMS switch device can be increased, and the contact resistance of the MEMS switch device can be reduced.

Description

Technical Field

[0001] The present invention relates to the field of computers, and more particularly to a method, a device, a equipment and a readable medium for manufacturing an ohmic contact MEMS switch device. Background Art

[0002] MEMS (micro-electromechanical system) switches refer to switching devices that switch the on and off states of circuits through mechanical movement within the scope of micro-electromechanical systems. Compared with traditional mechanical relays, MEMS switches have the advantages of fast switching speed, small size, and low power consumption. Therefore, they have important application value in aerospace and micro-satellites where high switch volume and power consumption are required. Compared with solid-state semiconductor switches, MEMS switches can achieve physical disconnection, and there are no metal-semiconductor junctions and PN-junctions, so the on-resistance and open-circuit capacitance are small. They have the advantages of good linear characteristics, good isolation, no leakage current, and high reliability under high temperature or radiation conditions. Therefore, they have great application potential and significance in radio frequency and microwave systems such as wireless communications. According to the contact type classification, MEMS switches include two contact forms: ohmic contact and capacitive contact. Among them, ohmic contact MEMS switches are more widely used. They can not only work in high-frequency AC segments, but also work under DC conditions.

[0003] The main structure of the traditional ohmic contact MEMS switch includes three parts: insulating substrate, driving electrode (gate), movable electrode (source) and contact electrode (drain), among which the driving electrode, movable electrode and contact electrode are all made of conductive materials. When a voltage is applied between the driving electrode and the movable electrode, the movable electrode will move downward under the action of electrostatic attraction and come into contact with the contact electrode, so that the switch changes from the off state to the on state. When the voltage difference between the driving electrode and the movable electrode is 0, the electrostatic force disappears, and the movable electrode returns to its original position under the action of the elastic restoring force, so that the switch changes from the on state to the off state. There are two main failure modes of ohmic contact MEMS switches: one is that the contact resistance of the contact between the movable electrode and the contact electrode increases, resulting in increased insertion loss and even blocking the transmission of electrical signals; the other is that the adhesion between the movable electrode and the contact electrode increases, resulting in permanent adhesion between the upper and lower electrodes, and the switch cannot be disconnected again. The contact resistance and adhesion between the movable electrode and the fixed electrode are the decisive factors affecting the performance and life of the ohmic contact MEMS switch.

[0004] Graphene is a two-dimensional material with a single atomic layer thickness (0.34nm), an atomically flat surface and novel electronic properties, and has broad application prospects in the field of microelectronic devices. Graphene not only has excellent conductivity, but also its interlayer force is van der Waals force and the interlayer adhesion is small, so it is very suitable as a coating material for the contacts of MEMS switches.

[0005] In 2018, Seo et al. used the CVD (Chemical Vapor Deposition) method to grow graphene on the surface of nickel-nickel (movable electrode-contact electrode) contacts and prepared a MEMS switch with a graphene coating. Although the multilayer graphene coating can increase the life of the MEMS switch with nickel-nickel contacts by at least 1000 times, the specific contact resistance is also increased by 50 times (from 100Ω to 5000Ω), which reduces the electrical performance of the MEMS switch and increases power consumption. The main reason why the multilayer graphene coating causes the increase in contact resistance is that the CVD growth method is used to plate graphene on the nickel substrate, and multilayer graphene is usually obtained. The increased resistance is mainly the interlayer resistance of the multilayer graphene. Summary of the invention

[0006] In view of this, the purpose of an embodiment of the present invention is to propose a method, device, equipment and readable medium for manufacturing an ohmic contact MEMS switch device. By using the technical solution of the present invention, the life of the MEMS switch device can be increased and the contact resistance of the MEMS switch device can be reduced.

[0007] Based on the above purpose, one aspect of an embodiment of the present invention provides a method for manufacturing an ohmic contact MEMS switch device, comprising the following steps:

[0008] A contact electrode and a driving electrode are prepared on the surface of the insulating layer of the first substrate by mask etching, and a first single-layer graphene layer is plated on the surface of the contact electrode and the driving electrode respectively by chemical vapor deposition;

[0009] A movable electrode is prepared on the surface of the insulating layer of the second substrate by mask etching, and a second single-layer graphene layer is plated on the surface of the movable electrode by chemical vapor deposition;

[0010] removing a predetermined portion of the insulating layer of the second substrate by wet etching;

[0011] The first substrate and the second substrate are assembled together by bonding to form an ohmic contact MEMS switch with a single-layer graphene coating.

[0012] According to one embodiment of the present invention, it also includes:

[0013] During the growth of the first single-layer graphene layer, the direction of the gas flow is kept constant;

[0014] The direction of the gas flow is kept constant during the growth of the second single-layer graphene layer.

[0015] According to an embodiment of the present invention, the first substrate and the second substrate are made of silicon, the insulating layer of the first substrate and the insulating layer of the second substrate are made of silicon oxide, and the contact electrodes, the driving electrodes and the movable electrodes are made of copper.

[0016] According to one embodiment of the present invention, the first substrate is in the shape of a plate, and the second substrate is in the shape of a U. The first substrate and the second substrate are assembled to form an internal space, in which the movable electrode is above the contact electrode and the driving electrode at a preset distance.

[0017] Another aspect of the embodiments of the present invention further provides a device for manufacturing an ohmic contact MEMS switch device, the device comprising:

[0018] A first coating module, the first coating module is configured to prepare a contact electrode and a drive electrode on the surface of the insulating layer of the first substrate by a mask etching method, and to coat a first single-layer graphene layer on the surface of the contact electrode and the drive electrode respectively by a chemical vapor deposition method;

[0019] A second coating module, the second coating module is configured to prepare a movable electrode on the surface of the insulating layer of the second substrate by mask etching, and to coat a second single-layer graphene layer on the surface of the movable electrode by chemical vapor deposition;

[0020] An etching module, the etching module is configured to remove a preset portion of the insulating layer of the second substrate by wet etching;

[0021] The combined module is configured to assemble the first substrate and the second substrate together by bonding to form an ohmic contact MEMS switch with a single-layer graphene coating.

[0022] According to one embodiment of the present invention, a holding module is further included, and the holding module is configured as follows:

[0023] During the growth of the first single-layer graphene layer, the direction of the gas flow is kept constant;

[0024] The direction of the gas flow is kept constant during the growth of the second single-layer graphene layer.

[0025] According to an embodiment of the present invention, the first substrate and the second substrate are made of silicon, the insulating layer of the first substrate and the insulating layer of the second substrate are made of silicon oxide, and the contact electrodes, the driving electrodes and the movable electrodes are made of copper.

[0026] According to one embodiment of the present invention, the first substrate is in the shape of a plate, and the second substrate is in the shape of a U. The first substrate and the second substrate are assembled to form an internal space, in which the movable electrode is above the contact electrode and the driving electrode at a preset distance.

[0027] Another aspect of the embodiments of the present invention further provides a computer device, the computer device comprising:

[0028] at least one processor; and

[0029] The memory stores computer instructions executable on the processor, and the instructions implement the steps of any one of the above methods when executed by the processor.

[0030] According to another aspect of the embodiments of the present invention, a computer-readable storage medium is provided, wherein the computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of any one of the above methods are implemented.

[0031] The present invention has the following beneficial technical effects: the method for manufacturing an ohmic contact MEMS switch device provided by the embodiment of the present invention comprises preparing a contact electrode and a drive electrode on the surface of an insulating layer of a first substrate by mask etching, and coating the surfaces of the contact electrode and the drive electrode with a first single-layer graphene layer respectively by chemical vapor deposition; preparing a movable electrode on the surface of an insulating layer of a second substrate by mask etching, and coating the surface of the movable electrode with a second single-layer graphene layer by chemical vapor deposition; removing a preset portion of the insulating layer of the second substrate by wet etching; and assembling the first substrate and the second substrate together by bonding to form an ohmic contact MEMS switch with a single-layer graphene coating. The technical solution can increase the service life of the MEMS switch device and reduce the contact resistance of the MEMS switch device. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention. For ordinary technicians in this field, other embodiments can be obtained based on these drawings without paying creative work.

[0033] Figure 1 A schematic flow chart of a method for manufacturing an ohmic contact MEMS switch device according to an embodiment of the present invention;

[0034] Figure 2 A schematic diagram of a preparation process of an ohmic contact MEMS switch device according to an embodiment of the present invention;

[0035] Figure 3 A schematic diagram of a device for manufacturing an ohmic contact MEMS switch device according to an embodiment of the present invention;

[0036] Figure 4is a schematic diagram of a computer device according to an embodiment of the present invention;

[0037] Figure 5 FIG. 1 is a schematic diagram of a computer-readable storage medium according to an embodiment of the present invention. DETAILED DESCRIPTION

[0038] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the embodiments of the present invention are further described in detail below in combination with specific embodiments and with reference to the accompanying drawings.

[0039] Based on the above objectives, a first aspect of an embodiment of the present invention provides an embodiment of a method for manufacturing an ohmic contact MEMS switch device. Figure 1 Shown is a schematic flow chart of the method.

[0040] like Figure 1 As shown in , the method may include the following steps:

[0041] S1 prepares contact electrodes and driving electrodes on the surface of the insulating layer of the first substrate by mask etching, and respectively plates a first single-layer graphene layer on the surface of the contact electrode and the driving electrode by chemical vapor deposition. Figure 2 The manufacturing process of the MEMS switch device can be divided into the lower half preparation and the upper half preparation. The manufacturing process of the lower half is to first prepare the contact electrode 3 and the driving electrode 4 on the surface of the insulating layer 2 of the substrate 1 by mask etching. Figure 2 As shown in (b), a single-layer graphene 5 and a single-layer graphene 6 are plated on the contact electrode 3 and the drive electrode 4 by chemical vapor deposition. During the growth of the single-layer graphene, the direction of the gas flow is kept constant in a certain direction, such as Figure 2 As shown in (c).

[0042] S2 prepares a movable electrode on the surface of the insulating layer of the second substrate by mask etching, and plates a second monolayer of graphene on the surface of the movable electrode by chemical vapor deposition. The preparation process of the upper part is to obtain a substrate 7 with a U-shaped groove by etching, and obtain an insulating layer 8 by oxidation, and then prepare a movable electrode 9 on the surface of the insulating layer 8 by mask etching, such as Figure 2 As shown in (d), a single layer of graphene 10 is plated on the surface of the movable electrode 9 by chemical vapor deposition. Figure 2 As shown in (e), the direction of the airflow during the growth of the single-layer graphene 10 is Figure 2 In (c), the gas flow direction during the growth of the single-layer graphene 5 is the same to ensure that the single-layer graphene 10 and the single-layer graphene 5 have the same lattice orientation.

[0043] S3 uses wet etching to remove the predetermined portion of the insulating layer of the second substrate. Use wet etching to remove the left half of the insulating layer 8, such as Figure 2 As shown in (f).

[0044] S4 assembling the first substrate and the second substrate together by bonding to form an ohmic contact MEMS switch with a single-layer graphene coating. Assembling the upper half and the lower half of the MEMS switch device together by bonding to form an ohmic contact MEMS switch with a single-layer graphene coating, such as Figure 2 As shown in (a), the ohmic contact MEMS switch with a single-layer graphene coating includes: a substrate 1, an insulating layer 2, a contact electrode 3 (drain), a driving electrode 4 (gate), a graphene coating 5 on the surface of the contact electrode, a graphene coating 6 on the surface of the driving electrode, a substrate 7 of the upper device, an insulating layer 8, a movable electrode 9 (source), and a graphene coating 10 on the surface of the movable electrode. In some embodiments, the material of the substrate 1 and the substrate 7 is preferably silicon, and the material of the insulating layer 2 and the insulating layer 8 is preferably silicon oxide. The material of the contact electrode 3, the driving electrode 4, and the movable electrode 9 is preferably copper. In some embodiments, the graphene coating 5 on the surface of the contact electrode, the graphene coating 6 on the surface of the driving electrode, and the graphene coating 10 on the surface of the movable electrode are all single-layer graphene, and the lattice orientation of the graphene coating 5 and the graphene coating 10 is the same. The working process of the ohmic contact MEMS switch with a single-layer graphene coating includes: when the voltage difference between the driving electrode 4 and the movable electrode 9 is 0, the movable electrode 9 is away from the contact electrode 3, and the switch is in an off state. When the voltage difference between the driving electrode 4 and the movable electrode 9 is greater than a certain threshold voltage, the movable electrode 9 bends downward under the action of electrostatic attraction, causing the single-layer graphene 10 with the same lattice orientation to come into contact with the single-layer graphene 5, and the switch is in the on state.

[0045] By using the technical solution of the present invention, the service life of the MEMS switch device can be increased and the contact resistance of the MEMS switch device can be reduced.

[0046] In a preferred embodiment of the present invention, it also includes:

[0047] During the growth of the first single-layer graphene layer, the direction of the gas flow is kept constant;

[0048] The direction of the gas flow is kept constant during the growth of the second single-layer graphene layer. The direction of the gas flow during the growth of the single-layer graphene 10 is the same as the direction of the gas flow during the growth of the single-layer graphene 5, so as to ensure that the single-layer graphene 10 and the single-layer graphene 5 have the same lattice orientation, thereby minimizing the contact resistance between the single-layer graphene 10 and the single-layer graphene 5.

[0049] In a preferred embodiment of the present invention, the first substrate and the second substrate are made of silicon, the insulating layer of the first substrate and the insulating layer of the second substrate are made of silicon oxide, and the contact electrodes, the driving electrodes and the movable electrodes are made of copper.

[0050] In a preferred embodiment of the present invention, the first substrate is in the shape of a flat plate, and the second substrate is in the shape of a U. The first substrate and the second substrate are assembled to form an internal space, in which the movable electrode is above the contact electrode and the driving electrode and has a preset distance.

[0051] The single-layer graphene coating MEMS switch device provided by the present invention has the following characteristics:

[0052] 1. In terms of device life, the life of graphene-coated MEMS switch devices is longer than that of conventional metal MEMS switch devices due to the low adhesion characteristics of graphene.

[0053] 2. In terms of device performance, the coating adopts a single-layer graphene coating instead of the multi-layer graphene coating of the existing technology, and the single-layer graphene of the driving electrode and the single-layer graphene of the contact electrode have the same lattice orientation, so that the contact resistance of the MEMS switch device with the single-layer graphene coating of the present invention is lower than that of the conventional MEMS switch device with the graphene coating.

[0054] It should be noted that a person of ordinary skill in the art can understand that all or part of the processes in the above-mentioned embodiment method can be implemented by instructing the relevant hardware through a computer program, and the above-mentioned program can be stored in a computer-readable storage medium, and when the program is executed, it can include the processes of the embodiments of the above-mentioned methods. The storage medium can be a disk, an optical disk, a read-only memory (ROM) or a random access memory (RAM), etc. The above-mentioned computer program embodiment can achieve the same or similar effect as any of the above-mentioned method embodiments corresponding thereto.

[0055] In addition, the method disclosed in the embodiment of the present invention can also be implemented as a computer program executed by a CPU, and the computer program can be stored in a computer-readable storage medium. When the computer program is executed by the CPU, the above functions defined in the method disclosed in the embodiment of the present invention are performed.

[0056] Based on the above purpose, a second aspect of the embodiment of the present invention provides a device for manufacturing an ohmic contact MEMS switch device, such as Figure 3 As shown, the device 200 includes:

[0057] A first coating module, the first coating module is configured to prepare a contact electrode and a drive electrode on the surface of the insulating layer of the first substrate by a mask etching method, and to coat a first single-layer graphene layer on the surface of the contact electrode and the drive electrode respectively by a chemical vapor deposition method;

[0058] A second coating module, the second coating module is configured to prepare a movable electrode on the surface of the insulating layer of the second substrate by mask etching, and to coat a second single-layer graphene layer on the surface of the movable electrode by chemical vapor deposition;

[0059] An etching module, the etching module is configured to remove a preset portion of the insulating layer of the second substrate by wet etching;

[0060] The combined module is configured to assemble the first substrate and the second substrate together by bonding to form an ohmic contact MEMS switch with a single-layer graphene coating.

[0061] In a preferred embodiment of the present invention, a holding module is further included, and the holding module is configured as follows:

[0062] During the growth of the first single-layer graphene layer, the direction of the gas flow is kept constant;

[0063] The direction of the gas flow is kept constant during the growth of the second single-layer graphene layer.

[0064] In a preferred embodiment of the present invention, the first substrate and the second substrate are made of silicon, the insulating layer of the first substrate and the insulating layer of the second substrate are made of silicon oxide, and the contact electrodes, the driving electrodes and the movable electrodes are made of copper.

[0065] In a preferred embodiment of the present invention, the first substrate is in the shape of a flat plate, and the second substrate is in the shape of a U. The first substrate and the second substrate are assembled to form an internal space, in which the movable electrode is above the contact electrode and the driving electrode and has a preset distance.

[0066] Based on the above purpose, a third aspect of an embodiment of the present invention provides a computer device. Figure 4 FIG. 2 is a schematic diagram of an embodiment of a computer device provided by the present invention. Figure 4 As shown, the embodiment of the present invention includes the following apparatus: at least one processor 21; and a memory 22, the memory 22 stores computer instructions 23 that can be run on the processor, and when the instructions are executed by the processor, the following method is implemented:

[0067] A contact electrode and a driving electrode are prepared on the surface of the insulating layer of the first substrate by mask etching, and a first single-layer graphene layer is plated on the surface of the contact electrode and the driving electrode respectively by chemical vapor deposition;

[0068] A movable electrode is prepared on the surface of the insulating layer of the second substrate by mask etching, and a second single-layer graphene layer is plated on the surface of the movable electrode by chemical vapor deposition;

[0069] removing a predetermined portion of the insulating layer of the second substrate by wet etching;

[0070] The first substrate and the second substrate are assembled together by bonding to form an ohmic contact MEMS switch with a single-layer graphene coating.

[0071] In a preferred embodiment of the present invention, it also includes:

[0072] During the growth of the first single-layer graphene layer, the direction of the gas flow is kept constant;

[0073] The direction of the gas flow is kept constant during the growth of the second single-layer graphene layer.

[0074] In a preferred embodiment of the present invention, the first substrate and the second substrate are made of silicon, the insulating layer of the first substrate and the insulating layer of the second substrate are made of silicon oxide, and the contact electrodes, the driving electrodes and the movable electrodes are made of copper.

[0075] In a preferred embodiment of the present invention, the first substrate is in the shape of a flat plate, and the second substrate is in the shape of a U. The first substrate and the second substrate are assembled to form an internal space, in which the movable electrode is above the contact electrode and the driving electrode and has a preset distance.

[0076] Based on the above purpose, a fourth aspect of an embodiment of the present invention provides a computer-readable storage medium. Figure 5 FIG. 2 is a schematic diagram of an embodiment of a computer-readable storage medium provided by the present invention. Figure 5 As shown, the computer readable storage medium 31 stores a computer program 32 that performs the following method when executed by a processor:

[0077] A contact electrode and a driving electrode are prepared on the surface of the insulating layer of the first substrate by mask etching, and a first single-layer graphene layer is plated on the surface of the contact electrode and the driving electrode respectively by chemical vapor deposition;

[0078] A movable electrode is prepared on the surface of the insulating layer of the second substrate by mask etching, and a second single-layer graphene layer is plated on the surface of the movable electrode by chemical vapor deposition;

[0079] removing a predetermined portion of the insulating layer of the second substrate by wet etching;

[0080] The first substrate and the second substrate are assembled together by bonding to form an ohmic contact MEMS switch with a single-layer graphene coating.

[0081] In a preferred embodiment of the present invention, it also includes:

[0082] During the growth of the first single-layer graphene layer, the direction of the gas flow is kept constant;

[0083] The direction of the gas flow is kept constant during the growth of the second single-layer graphene layer.

[0084] In a preferred embodiment of the present invention, the first substrate and the second substrate are made of silicon, the insulating layer of the first substrate and the insulating layer of the second substrate are made of silicon oxide, and the contact electrodes, the driving electrodes and the movable electrodes are made of copper.

[0085] In a preferred embodiment of the present invention, the first substrate is in the shape of a flat plate, and the second substrate is in the shape of a U. The first substrate and the second substrate are assembled to form an internal space, in which the movable electrode is above the contact electrode and the driving electrode and has a preset distance.

[0086] In addition, the method disclosed in the embodiment of the present invention can also be implemented as a computer program executed by a processor, and the computer program can be stored in a computer-readable storage medium. When the computer program is executed by the processor, the above functions defined in the method disclosed in the embodiment of the present invention are performed.

[0087] In addition, the above method steps and system units may also be implemented using a controller and a computer-readable storage medium for storing a computer program that enables the controller to implement the above steps or unit functions.

[0088] It will also be appreciated by those skilled in the art that various exemplary logic blocks, modules, circuits and algorithm steps described in conjunction with the disclosure herein can be implemented as electronic hardware, computer software or a combination of the two. In order to clearly illustrate this interchangeability of hardware and software, a general description has been given to the functions of various schematic components, blocks, modules, circuits and steps. Whether this function is implemented as software or hardware depends on specific applications and the design constraints imposed on the entire system. Those skilled in the art can implement the function in various ways for each specific application, but this implementation decision should not be interpreted as causing a departure from the disclosed scope of the embodiments of the present invention.

[0089] In one or more exemplary designs, the function can be implemented in hardware, software, firmware or any combination thereof. If implemented in software, the function can be stored on a computer-readable medium or transmitted by a computer-readable medium as one or more instructions or codes. Computer-readable media include computer storage media and communication media, and the communication media include any media that helps to transfer a computer program from one location to another. The storage medium can be any available medium that can be accessed by a general or special computer. As an example and not limiting, the computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disk storage devices, disk storage devices or other magnetic storage devices, or any other medium that can be used to carry or store the required program code in the form of an instruction or data structure and can be accessed by a general or special computer or a general or special processor. In addition, any connection can be appropriately referred to as a computer-readable medium. For example, if a coaxial cable, optical fiber cable, twisted pair, digital subscriber line (DSL) or wireless technologies such as infrared, radio and microwaves are used to send software from a website, server or other remote source, the above-mentioned coaxial cable, optical fiber cable, twisted pair, DSL or wireless technologies such as infrared, radio and microwaves are all included in the definition of the medium. As used herein, disk and disc include compact disc (CD), laser disc, optical disc, digital versatile disc (DVD), floppy disk, Blu-ray disc, wherein disks usually reproduce data magnetically, while optical discs reproduce data optically with lasers. Combinations of the above should also be included within the scope of computer-readable media.

[0090] The above are exemplary embodiments disclosed in the present invention, but it should be noted that various changes and modifications may be made without departing from the scope disclosed in the embodiments of the present invention as defined in the claims. The functions, steps and / or actions of the method claims according to the disclosed embodiments described herein do not need to be performed in any particular order. In addition, although the elements disclosed in the embodiments of the present invention may be described or required in individual form, they may also be understood as multiple unless explicitly limited to the singular.

[0091] It should be understood that, as used herein, the singular forms "a", "an" are intended to include the plural forms as well, unless the context clearly supports an exception. It should also be understood that, as used herein, "and / or" refers to any and all possible combinations including one or more of the associated listed items.

[0092] The serial numbers of the embodiments disclosed in the above embodiments of the present invention are only for description and do not represent the advantages or disadvantages of the embodiments.

[0093] A person skilled in the art will understand that all or part of the steps to implement the above embodiments may be accomplished by hardware or by instructing related hardware through a program, and the program may be stored in a computer-readable storage medium, and the above-mentioned storage medium may be a read-only memory, a disk or an optical disk, etc.

[0094] A person skilled in the art should understand that the discussion of any of the above embodiments is only exemplary and is not intended to imply that the scope of the disclosure of the embodiments of the present invention (including the claims) is limited to these examples; under the concept of the embodiments of the present invention, the technical features in the above embodiments or different embodiments can also be combined, and there are many other changes in different aspects of the embodiments of the present invention as above, which are not provided in detail for the sake of simplicity. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the embodiments of the present invention should be included in the protection scope of the embodiments of the present invention.

Claims

1. A method for manufacturing an ohmic contact MEMS switch device, characterized in that: The following steps are involved: A contact electrode and a driving electrode are prepared on the surface of the insulating layer of the first substrate by mask etching, and a first single-layer graphene layer is respectively plated on the surface of the contact electrode and the driving electrode by chemical vapor deposition; wherein the direction of the gas flow is kept constant during the growth of the first single-layer graphene layer; A movable electrode is prepared on the surface of the insulating layer of the second substrate by mask etching, and a second single-layer graphene layer is plated on the surface of the movable electrode by chemical vapor deposition; wherein a substrate having a U-shaped groove is obtained by etching, and an insulating layer is obtained by oxidation, and then a movable electrode is prepared on the surface of the insulating layer by mask etching, and the direction of the gas flow is kept constant during the growth of the second single-layer graphene layer; removing a predetermined portion of the insulating layer of the second substrate by wet etching; The first substrate and the second substrate are assembled together by bonding to form an ohmic contact MEMS switch with a single-layer graphene coating.

2. The method according to claim 1, characterized in that The materials of the first substrate and the second substrate are silicon, the materials of the insulating layer of the first substrate and the insulating layer of the second substrate are silicon oxide, and the materials of the contact electrode, the driving electrode and the movable electrode are copper.

3. The method according to claim 1, characterized in that The first substrate is in a flat plate shape, the second substrate is in a U-shape, and the first substrate and the second substrate are assembled to form an internal space, in which the movable electrode is above the contact electrode and the driving electrode at a preset distance.

4. A device for manufacturing an ohmic contact MEMS switch device, characterized in that: The device comprises: A first coating module, wherein the first coating module is configured to prepare a contact electrode and a driving electrode on the surface of the insulating layer of the first substrate by a mask etching method, and to coat a first single-layer graphene layer on the surface of the contact electrode and the driving electrode respectively by a chemical vapor deposition method; wherein the direction of the gas flow is kept constant during the growth of the first single-layer graphene layer; A second coating module, wherein the second coating module is configured to prepare a movable electrode on the surface of the insulating layer of the second substrate by mask etching, and to coat a second single-layer graphene layer on the surface of the movable electrode by chemical vapor deposition; wherein a substrate having a U-shaped groove is obtained by etching, and an insulating layer is obtained by oxidation, and then a movable electrode is prepared on the surface of the insulating layer by mask etching, and during the growth of the second single-layer graphene layer, the direction of the gas flow is kept in the constant direction; An etching module, wherein the etching module is configured to remove a predetermined portion of the insulating layer of the second substrate by wet etching; A combined module is configured to assemble a first substrate and a second substrate together by bonding to form an ohmic contact MEMS switch with a single-layer graphene coating.

5. The device according to claim 4, characterized in that The materials of the first substrate and the second substrate are silicon, the materials of the insulating layer of the first substrate and the insulating layer of the second substrate are silicon oxide, and the materials of the contact electrode, the driving electrode and the movable electrode are copper.

6. The device according to claim 4, characterized in that The first substrate is in a flat plate shape, the second substrate is in a U-shape, and the first substrate and the second substrate are assembled to form an internal space, in which the movable electrode is above the contact electrode and the driving electrode at a preset distance.

7. A computer device, characterized in that: include: at least one processor; as well as A memory, wherein the memory stores computer instructions executable on the processor, wherein the instructions, when executed by the processor, implement the steps of the method according to any one of claims 1 to 3.

8. A computer-readable storage medium storing a computer program, characterized in that: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 3 are implemented.

Images