Light-emitting components

Abstract

The present invention relates to a light-emitting module, comprising: a circuit substrate; and a plurality of light-emitting elements mounted side by side on the circuit substrate, having an upper surface including a long side and a short side, wherein the light-emitting elements comprise: a light-emitting diode chip having a raised pad formed on the lower surface; a wavelength conversion component covering the side surface and the upper surface of the light-emitting diode chip, and the upper surface comprises a long side and a short side; a white blocking component covering both side surfaces of the long side of the wavelength conversion component and the lower surface of the light-emitting diode chip; and a conductive adhesive component formed at the lower portion of the light-emitting diode chip, wherein the white blocking component comprises a through hole located at the lower portion of the light-emitting diode chip, the conductive adhesive component fills the through hole, the white blocking component exposes both side surfaces of the short side of the wavelength conversion component, and the plurality of light-emitting elements are arranged so that the side surfaces of adjacent light-emitting elements exposed to the wavelength conversion component face each other.

Description

Technical Field

[0001] This application is a divisional application of the invention patent application with the application date of December 18, 2018, application number 201880005641.2, and invention name “Light-emitting element and light-emitting module including the light-emitting element”. Background Art

[0002] Generally, light-emitting elements are used as light sources in various fields such as backlight light sources of display devices. In particular, as backlight light sources, light-emitting elements can be roughly divided into top-emitting elements and side-emitting elements. Side-emitting elements are used in edge-type backlight modules to direct light toward the side of the light guide plate.

[0003] The light emitting element used in the edge type backlight module usually needs to emit light narrowly in the thickness direction of the light guide plate, that is, in the up and down direction, and emit light widely in the side direction along the edge of the light guide plate. For this reason, the side light emitting element used in the backlight module is generally formed into a rectangular shape having an elongated shape in one side direction.

[0004] In addition, a solution is being studied recently: a chip-scale package-shaped light-emitting element is directly mounted on a circuit substrate to form an edge-type backlight module as a light source. When a chip-scale package is used, the size of the light-emitting element can be reduced and the module production process becomes simpler than the existing side-emitting diode package using a lead frame.

[0005] When a chip-scale package-shaped light-emitting element is used as a side-emitting element, a light-emitting diode chip mounted on the side-emitting element has a shape that is elongated in one direction. Summary of the invention

[0006] Technical issues

[0007] The problem to be solved by the present invention is to provide a light emitting element for preventing the occurrence of a dark spot phenomenon and a light emitting module including the light emitting element.

[0008] Another problem to be solved by the present invention is to provide a light emitting element capable of maintaining miniaturization and improving luminous efficiency, and a light emitting module including the light emitting element.

[0009] Technical Solution

[0010] According to one embodiment of the present invention, there is provided a light-emitting element including a light-emitting diode chip, a light-transmitting component, a white blocking component and a conductive adhesive component. A raised pad is formed on the lower surface of the light-emitting diode chip. The light-transmitting component covers the side and upper surface of the light-emitting diode chip, and the upper surface is a rectangular shape including a long side and a short side. The white blocking component covers the two side surfaces of the long side of the light-transmitting component and the lower surface of the light-emitting diode chip. The conductive adhesive component is formed to penetrate the white blocking component at the lower part of the light-emitting diode chip. At this time, the upper surface of the conductive adhesive component is connected to the raised pad of the light-emitting diode chip, and the lower surface of the conductive adhesive component is exposed from the lower surface of the white blocking component. In addition, the white blocking component exposes the two side surfaces of the short side of the light-transmitting component.

[0011] According to other embodiments of the present invention, a circuit substrate and a plurality of light-emitting elements mounted on the substrate and including long sides and short sides are provided. Here, the light-emitting element includes a light-emitting diode chip, a light-transmitting component, a white blocking component and a conductive adhesive component. A raised pad is formed on the lower surface of the light-emitting diode chip. The light-transmitting component covers the side and upper surface of the light-emitting diode chip. At this time, the upper surface of the light-transmitting component includes a long side and a short side. The white blocking component covers both side surfaces of the long side of the light-transmitting component and the lower surface of the light-emitting diode chip. The conductive adhesive component is formed to penetrate the white blocking component at the lower part of the light-emitting diode chip. At this time, the upper surface of the conductive adhesive component is connected to the raised pad of the light-emitting diode chip, and the lower surface of the conductive adhesive component is exposed to the lower surface of the white blocking component. The white blocking component exposes both side surfaces of the short side of the light-transmitting component. In addition, the plurality of light-emitting elements are configured so that the side surfaces of the light-transmitting components exposed between adjacent light-emitting elements face each other.

[0012] Effects of the Invention

[0013] The light emitting element and the light emitting module including the light emitting element according to the embodiment of the present invention reduce the distance between the light emitting diode chips disposed inside the adjacent light emitting elements, so that light can fully reach the area between the light emitting elements.

[0014] The light emitting element and the light emitting module including the light emitting element according to the embodiment of the present invention can maintain miniaturization and improve light emitting efficiency.

[0015] Other features and advantages of the present invention will become apparent from the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 and Figure 2 FIG. 1 is an exemplary diagram showing a light emitting diode chip according to a first embodiment of the present invention.

[0017] Figure 3 FIG. 1 is an exemplary diagram showing a light emitting diode chip according to a second embodiment of the present invention.

[0018] Figures 4 to 6 FIG. 1 is a diagram showing an example of another light emitting element according to the first embodiment of the present invention.

[0019] Figures 7 to 9 1 is a diagram showing an example of a light emitting element according to a second embodiment of the present invention.

[0020] Figures 10 to 12 1 is an exemplary diagram showing a light emitting element according to a third embodiment of the present invention.

[0021] Fig.13 FIG. 1 is an exemplary diagram showing a light emitting module according to a first embodiment of the present invention.

[0022] Fig.14 FIG. 1 is an exemplary diagram showing a light emitting module according to a second embodiment of the present invention.

[0023] Figures 15 to 18 1 is an exemplary diagram showing a light emitting element according to a fourth embodiment of the present invention.

[0024] Figures 19 to 30 1 is a diagram showing an example of a production process of a light emitting element according to an embodiment of the present invention.

[0025] Figure 31 to Figure 33 1 is an exemplary diagram showing a light emitting element according to a fifth embodiment of the present invention.

[0026] Fig.34 and Fig.35 is an exemplary diagram showing a display device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0027] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In order to fully convey the idea of ​​the present invention to those skilled in the art, the embodiments described below are provided as examples. Therefore, the present invention is not limited to the embodiments described below, and may be embodied in other forms. In addition, in the accompanying drawings, the width, length, thickness, etc. of the constituent elements may be exaggerated for convenience. Throughout the specification, the same reference numerals represent the same constituent elements, and similar reference numerals represent similar constituent elements.

[0028] In this specification, the term "light-emitting diode chip" refers to a chip formed by growing an epitaxial layer of a wafer and completing the formation of electrodes and bump pads, and then separating into individual chips through a singulation process. In addition, a "light-emitting element" means a unit element that can be individually mounted on a circuit substrate, etc. A light-emitting element includes a light-emitting diode chip separated into individual chips through a singulation process.

[0029] The light-emitting element according to an embodiment of the present invention comprises: a substrate; a light-emitting structure located at the lower part of the substrate; a first protruding pad located at the lower part of the light-emitting structure and electrically connected to the first conductive type semiconductor layer; and a second protruding pad formed at the lower part of the light-emitting structure, separated from the first protruding pad, and electrically connected to the second conductive type semiconductor layer. The light-emitting structure comprises a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer formed between the first conductive type semiconductor layer and the second semiconductor layer located at the lower part of the substrate. The lower surface of the substrate has a rectangular shape including a long side and a short side. The first protruding pad is slenderly arranged along one long side of the substrate. And, the second protruding pad is slenderly arranged along the other long side of the substrate.

[0030] At least one of the first raised pad and the second raised pad crosses a center line parallel to a short side of the lower surface of the substrate.

[0031] The first protruding pad may include a first elongated portion disposed elongated along a long side of the substrate, and a first extending portion formed from the first elongated portion along a short side of the substrate.

[0032] The second protruding pad may include a second elongated portion slenderly disposed along the other long side of the substrate, and a second extending portion formed from the second elongated portion along the other short side of the substrate.

[0033] The light emitting element further includes a wavelength conversion layer formed to cover the side surfaces and the upper surface of the substrate.

[0034] The thickness of the wavelength conversion component on the side surface of the substrate is smaller than the height from the upper surface of the substrate to the positions of the first protruding pad and the second protruding pad, and is larger than the thickness of the wavelength conversion component on the upper surface of the substrate.

[0035] The light emitting element may further include a white blocking layer covering the side of the wavelength conversion layer and the lower part of the light emitting structure. The white blocking layer covers the side of the wavelength conversion layer along the long sides of both sides of the substrate so as to expose the side of the wavelength conversion component covering the short sides of both sides of the substrate.

[0036] Here, the white blocking layer includes silicone resin or epoxy resin.

[0037] Also, an inner wall of the white barrier layer covering the side surface of the wavelength conversion layer may be formed to have an inclination.

[0038] The light emitting element may further include a conductive adhesive component connected to the first protruding pad and the second protruding pad. The white blocking component covering the lower portion of the light emitting structure has a plurality of through holes, and the conductive adhesive component fills the plurality of through holes.

[0039] A light-emitting module according to an embodiment of the present invention includes a circuit substrate and a light-emitting element mounted on the circuit substrate. The light-emitting element includes: a substrate; a light-emitting structure located at the lower part of the substrate; a first protruding pad located at the lower part of the light-emitting structure and electrically connected to the first conductive semiconductor layer; and a second protruding pad formed at the lower part of the light-emitting structure, laterally spaced from the first protruding pad, and electrically connected to the second conductive semiconductor layer. The light-emitting structure includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer formed between the first conductive semiconductor layer and the second semiconductor layer located at the lower part of the substrate. The lower surface of the substrate has a rectangular shape including a long side and a short side. The first protruding pad is slenderly arranged along one long side of the substrate. The second protruding pad is slenderly arranged along the other long side of the substrate.

[0040] At least one of the first raised pad and the second raised pad crosses a center line parallel to a short side of the lower surface of the substrate.

[0041] The first protruding pad may include a first elongated portion slenderly disposed along a long side of the substrate and a first extending portion formed from the first elongated portion along a short side of the substrate.

[0042] The second protruding pad may include a second elongated portion slenderly disposed along the other long side of the substrate and a second extending portion formed from the second elongated portion along the other short side of the substrate.

[0043] The light emitting module may further include a wavelength conversion member formed to cover the side and upper surfaces of the substrate.

[0044] The light emitting module may further include a white blocking layer covering the side of the wavelength conversion layer and the lower part of the light emitting structure. The white blocking layer covers the side of the wavelength conversion layer along the long sides of both sides of the substrate and exposes the side of the wavelength conversion layer covering the short sides of both sides of the substrate.

[0045] The light emitting module may further include a conductive adhesive member connected to the first protruding pad and the second protruding pad.

[0046] The white barrier layer covering the lower portion of the light emitting structure has a plurality of through holes, and the conductive adhesive member fills the plurality of through holes.

[0047] The circuit substrate of the light emitting module includes a first area where the light emitting element is disposed and a second area perpendicular to the first area.

[0048] Furthermore, the light emitting module may further include a circuit board mounted on the circuit board to be located on one short side of the board of the light emitting element, and may further include a voltage stabilizing element including a voltage stabilizing diode.

[0049] The voltage stabilizing element may further include a white barrier layer covering the voltage stabilizing diode.

[0050] According to another embodiment of the present invention, a light-emitting element includes a light-emitting diode chip, a light-transmitting component, a white blocking component and a conductive adhesive component. A raised pad is formed on the lower surface of the light-emitting diode chip. The light-transmitting component covers the side and upper surface of the light-emitting diode chip, and the upper surface is a rectangular shape including a long side and a short side. The white blocking component covers the two side surfaces of the long side of the light-transmitting component and the lower surface of the light-emitting diode chip. The conductive adhesive component is formed to pass through the white blocking component at the lower part of the light-emitting diode chip. At this time, the upper surface of the conductive adhesive component is connected to the raised pad of the light-emitting diode chip, and the lower surface of the conductive adhesive component is exposed on the lower surface of the white blocking component. In addition, the white blocking component exposes the two side surfaces of the short side of the light-transmitting component.

[0051] The light emitting diode chip includes a substrate, a light emitting structure, a first raised pad and a second raised pad. The light emitting structure is located at the bottom of the substrate and includes a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer formed between the first conductive semiconductor layer and the second semiconductor layer. The first raised pad is located at the bottom of the light emitting structure and is electrically connected to the first conductive semiconductor layer. The second raised pad is formed at the bottom of the light emitting structure, is separated from the first raised pad, and is electrically connected to the second conductive semiconductor layer. At this time, the lower surface of the substrate has a rectangular shape including a long side and a short side. In addition, the first raised pad and the second raised pad are arranged side by side along the long side of the lower surface of the substrate.

[0052] The light emitting element further includes a wavelength conversion component formed to cover the side surfaces and the upper surface of the substrate, wherein the portion of the wavelength conversion component covering the side surfaces of the short sides of the light emitting diode chip is thinner than the portion covering the side surfaces of the long sides of the light emitting diode chip.

[0053] As an embodiment, an inner wall of the white blocking member covering a side surface of the wavelength conversion member has an inclination.

[0054] Furthermore, the inner wall of the white blocking member may include a first inner wall connected to the bottom surface of the white blocking member and a second inner wall connected to the first inner wall and extending to the upper surface of the white blocking member. In this case, the first inner wall and the second inner wall may have different inclinations.

[0055] Furthermore, the white blocking member may have a larger inclination angle of the first inner wall than the second inner wall based on the side surface of the light emitting diode chip.

[0056] The light emitting element may further include a wavelength conversion substance dispersed in the light transmissive member.

[0057] According to other embodiments of the present invention, there may be provided: a circuit substrate; and a plurality of light-emitting elements mounted on the circuit substrate and including long sides and short sides. Here, the light-emitting element includes a light-emitting diode chip, a light-transmitting component, a white blocking component and a conductive adhesive component. A raised pad is formed on the lower surface of the light-emitting diode chip. The light-transmitting component covers the side and upper surface of the light-emitting diode chip. At this time, the upper surface of the light-transmitting component includes a long side and a short side. The white blocking component covers both side surfaces of the long side of the light-transmitting component and the lower surface of the light-emitting diode chip. The conductive adhesive component is formed to penetrate the white blocking component at the lower part of the light-emitting diode chip. At this time, the upper surface of the conductive adhesive component is connected to the raised pad of the light-emitting diode chip, and the lower surface of the conductive adhesive component is exposed to the lower surface of the white blocking component. The white blocking component exposes both side surfaces of the short side of the light-transmitting component. In addition, the plurality of light-emitting elements are configured so that the side surfaces of the light-transmitting components exposed between adjacent light-emitting elements face each other.

[0058] The light emitting diode chip includes a substrate, a light emitting structure, a first raised pad and a second raised pad. The light emitting structure is located at the bottom of the substrate and includes a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer formed between the first conductive semiconductor layer and the second semiconductor layer. The first raised pad is located at the bottom of the light emitting structure and is electrically connected to the first conductive semiconductor layer. The second raised pad is formed at the bottom of the light emitting structure, is separated from the first raised pad, and is electrically connected to the second conductive semiconductor layer. At this time, the lower surface of the substrate has a rectangular shape including a long side and a short side. In addition, the first raised pad and the second raised pad are arranged side by side along the long side of the lower surface of the substrate.

[0059] The light emitting element further includes a wavelength conversion component formed to cover the side and upper surface of the substrate, wherein the portion of the wavelength conversion component covering the side of the short side of the light emitting diode chip is thinner than the portion covering the side of the long side of the light emitting diode chip.

[0060] As an example, an inner wall of the white blocking member covering the side surface of the wavelength conversion member may have an inclination.

[0061] Furthermore, the inner wall of the white blocking member may include a first inner wall connected to the bottom surface of the white blocking member and a second inner wall connected to the first inner wall and extending to the upper surface of the white blocking member. In this case, the first inner wall and the second inner wall may have different inclination angles.

[0062] Furthermore, the white blocking component may be such that the inclination of the first inner wall is greater than the inclination angle of the second inner wall based on the side surface of the light emitting diode chip.

[0063] Furthermore, portions of the light-transmitting member covering both side surfaces of the short sides of the light-emitting element are exposed by the white blocking member.

[0064] A conductive circuit pattern is formed on the circuit substrate, and the plurality of light emitting elements are electrically connected to the circuit pattern.

[0065] Furthermore, the plurality of light emitting elements may be connected in series with each other through the circuit pattern.

[0066] The light emitting element may further include a wavelength conversion substance dispersed in the light transmissive member.

[0067] The following is a detailed description with reference to the accompanying drawings.

[0068] Figure 1 and Figure 2 FIG. 1 is an exemplary diagram showing a light emitting diode chip according to a first embodiment of the present invention.

[0069] Figure 1 is a lower plan view of a light emitting diode chip 100 according to a first embodiment of the present invention, Figure 2 is a cross-sectional view ( A1 - A2 ) of a light emitting diode chip 100 according to a first embodiment of the present invention.

[0070] refer to Figure 1 and Figure 2The light emitting diode chip 100 includes a substrate 110, a light emitting structure 120, an ohmic reflective layer 130, a first insulating layer 140, a first pad metal layer 151, a second pad metal layer 152, a second insulating layer 160, a first convex pad 170 and a second convex pad 180. The lower frame of the light emitting diode chip 100 including the above structure has a rectangular structure including a long side and a short side. Here, the long side is a longer side in the lower frame, and the short side is a side shorter than the long side.

[0071] The substrate 110 is not particularly limited as long as it is a substrate capable of growing a gallium nitride-based semiconductor layer. For example, the substrate 110 may be a sapphire substrate, a gallium nitride substrate, a silicon carbide (SiC) substrate, or a variety of other substrates, and may be a patterned sapphire substrate. The substrate 110 has a rectangular shape including a long side and a short side.

[0072] A light emitting structure 120 is formed under the substrate 110 . The light emitting structure 120 includes a first conductive semiconductor layer 121 , an active layer 122 , and a second conductive semiconductor layer 123 .

[0073] The first conductive semiconductor layer 121 is formed at the lower part of the substrate 110. The first conductive semiconductor layer 121 may be a layer grown on the substrate 110, and may be a gallium nitride-based semiconductor layer. The first conductive semiconductor layer 121 may be a gallium nitride-based semiconductor layer doped with impurities (e.g., silicon). Here, although the first conductive semiconductor layer 121 is described as being distinguished from the substrate 110, in the case where the substrate 110 is a gallium nitride substrate, the boundary between the two may not be particularly clearly distinguished.

[0074] A mesa M is disposed at the lower portion of the first conductive semiconductor layer 121. The mesa M may be located within the first conductive semiconductor layer 121. Thus, an edge region of the first conductive semiconductor layer may be exposed to the outside without being covered by the mesa M. Furthermore, the mesa M may include a portion of the first conductive semiconductor layer 121.

[0075] The mesa M includes a second conductive semiconductor layer 123 and an active layer. The active layer 122 is formed at the lower portion of the first conductive semiconductor layer 121, and the second conductive semiconductor layer 123 is formed at the lower portion of the active layer 122. The active layer 122 may have a single quantum well structure or a multi-quantum well structure. The composition and thickness of the well layer in the active layer 122 determine the wavelength of the generated light. In particular, by adjusting the composition of the well layer, an active layer that generates ultraviolet light, blue light, or green light can be provided.

[0076] The second conductive type semiconductor layer 123 may be a gallium nitride-based semiconductor layer doped with p-type impurities (eg, magnesium (Mg)).

[0077] The first conductive type semiconductor layer 121 and the second conductive type semiconductor layer 123 may be a single layer, but are not limited thereto. The first conductive type semiconductor layer 121 and the second conductive type semiconductor layer 123 may be multiple layers, and may also include a super lattice layer.

[0078] The first conductive semiconductor layer 121 , the active layer 122 , and the second conductive semiconductor layer may be grown on the substrate 110 in a chamber using a known method such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).

[0079] The mesa M has an inclined side surface so that the area gradually becomes narrower as it is away from the first conductive type semiconductor layer. Thus, a layer covering the side surface of the mesa M can be stably formed.

[0080] In addition, the mesa M may have an elongated rectangular shape according to the shape of the substrate 110, and may include a groove exposing the first conductive type semiconductor layer 121 along the length direction of the substrate 110. Figure 1 As shown in FIG. 1 , the groove may pass through the center of the mesa M along the long side of the substrate 110 from the center of the short side of the mesa M adjacent to one short side of the substrate. The length of the groove is shorter than the length of the long side of the mesa M, so that the other short side of the mesa M is separated from the groove.

[0081] The ohmic reflective layer 130 is formed at the lower portion of the second conductive semiconductor layer 123 to contact the second conductive semiconductor layer 123. The ohmic reflective layer 130 may be disposed in the upper region of the mesa M and spread over almost the entire area of ​​the mesa. Figure 2 , the ohmic reflective layer 130 is not configured to cover the entire upper region of the mesa M. For example, the ohmic reflective layer 130 may cover more than 80% of the upper region of the mesa M. Furthermore, the ohmic reflective layer 130 may cover more than 90% of the upper region of the mesa M. Although not shown in this figure, an ohmic oxide layer (not shown) is also formed in the upper region of the mesa M to cover the mesa M around the ohmic reflective layer 130. In the case where the ohmic oxide layer (not shown) is configured around the ohmic reflective layer 130, the forward voltage of the light-emitting diode can be reduced because the ohmic contact area becomes wider.

[0082] The ohmic reflective layer 130 may include a metal layer having reflectivity. Thus, the ohmic reflective layer 130 may reflect light generated from the active layer 122 and traveling toward the ohmic reflective layer 130 toward the substrate 110. For example, the ohmic reflective layer 130 may be formed as a single metal layer, or may include an ohmic layer and a reflective layer. For example, the ohmic layer may include a metal such as nickel, and the reflective layer may include a metal with a high reflectivity such as silver or aluminum. In addition, the ohmic reflective layer 130 may include a barrier layer. The barrier layer may include nickel, titanium, and gold. For example, the ohmic reflective layer 130 may be formed as a multilayer structure of nickel / silver / nickel / titanium / nickel / titanium / gold / titanium.

[0083] In other embodiments, the ohmic reflective layer 130 may include: a transparent oxide layer, ohmically contacting the second conductive semiconductor layer 123; an insulating layer, covering the transparent oxide layer and having an opening portion exposing the transparent oxide layer; and a metal reflective layer, covering the insulating layer and connected to the transparent oxide layer through the opening portion of the insulating layer. According to this structure, an omnidirectional reflector may be provided.

[0084] In addition, the first insulating layer 140 covers the mesa M and the ohmic reflective layer 130. Furthermore, the first insulating layer 140 may cover the side of the mesa M. At this time, the first insulating layer 140 may cover a portion of the first conductive semiconductor layer exposed on the side of the mesa M. The first insulating layer 140 formed in this way exposes the first conductive semiconductor layer 121 disposed along the periphery of the mesa M.

[0085] Furthermore, the first insulating layer 140 is formed with at least one opening portion exposing the ohmic reflective layer 130. The opening portion 141 formed in the first insulating layer 140 is formed under the mesa M where the second pad metal layer 152 will be formed later. Through the opening portion 141, the second pad metal layer 152 is connected to the second conductive semiconductor layer 123, thereby forming an electrical connection.

[0086] The first insulating layer 140 may be formed of a single layer of SiO2 or Si3N4. However, the first insulating layer 140 is not limited thereto. For example, the first insulating layer 140 may be formed as a multilayer structure including a silicon nitride film and a silicon oxide film, or may include a distributed Bragg reflector in which silicon oxide films and titanium oxide films are alternately stacked.

[0087] The first pad metal layer 151 is formed under the first insulating layer 140 and under a portion of the first conductive semiconductor layer 121 exposed by the first insulating layer 140. The first pad metal layer 151 is insulated from the mesa M and the ohmic reflective layer 130 by the first insulating layer 140. The first pad metal layer 151 formed in this way contacts the first conductive semiconductor layer 121 and is electrically connected to each other.

[0088] The second pad metal layer 152 is formed under the first insulating layer 140 and at the opening 141, and is separated from the first pad metal layer 151. The second pad metal layer 152 is electrically connected to the ohmic reflective layer 130 through the opening 141.

[0089] The first pad metal layer 151 and the second pad metal layer 152 may be formed of the same material in the same process. For example, the first pad metal layer 151 and the second pad metal layer 152 may be formed into a multilayer structure of Cr / Al / Ni / Ti / Ni / Ti / Au / Ti.

[0090] The second insulating layer 160 is formed to cover the first pad metal layer 151 and the second pad metal layer 152. The second insulating layer 160 may cover the first conductive semiconductor layer 121 exposed along the periphery of the mesa M. At this time, the second insulating layer 160 may expose the first conductive semiconductor layer 121 at the edge of the substrate 110.

[0091] The second insulating layer includes a first opening 161 exposing the first pad metal layer 151 and a second opening 162 exposing the second pad metal layer 152. The first opening 161 and the second opening 162 may be disposed in a region below the mesa M.

[0092] Combination Figure 1 and Figure 2 For reference, the first opening 161 and the second opening 162 of the second insulating layer 160 are spaced apart from each other and are formed elongated along the long side of the substrate 110. Also, at least one of the first opening 161 and the second opening 162 may be formed to cross the center line C. Here, the center line C is a line parallel to the short side of the lower surface of the light emitting diode chip 100 or the substrate 110 and passing through the center of the lower surface. That is, the center line C is a line extending from the center between the two short sides of the light emitting diode chip toward the long side. Figure 1 The first opening 161 and the second opening 162 are all formed in a manner of crossing the center line C.

[0093] The second insulating layer 160 may be formed of a single layer of SiO2 or Si3N4, but is not limited thereto. For example, the second insulating layer 160 may have a multilayer structure including a silicon nitride film and a silicon oxide film, or may include a distributed Bragg reflector in which silicon oxide films and titanium oxide films are alternately stacked.

[0094] The first protruding pad 170 and the second protruding pad 180 are respectively formed on the first pad metal layer 151 and the second pad metal layer 152 , and are formed to protrude in a lower direction than the second insulating layer 160 .

[0095] The first protruding pad 170 is formed at the lower portion of the first pad metal layer 151 exposed by the first opening 161 of the second insulating layer 160. Also, the lower portion of the first protruding pad 170 may be formed to have a wider width than the upper portion thereof, thereby covering a portion of the lower surface of the second insulating layer 160. The first protruding pad 170 thus formed is electrically connected to the first conductive type semiconductor layer 121 through the first pad metal layer 151.

[0096] The second protruding pad 180 is formed at the lower portion of the second pad metal layer 152 exposed by the second opening portion 162 of the second insulating layer 160. Also, the lower portion of the second protruding pad 180 may be formed to have a wider width than the upper portion thereof, thereby covering a portion of the lower surface of the second insulating layer 160. The second protruding pad 180 formed in this way is electrically connected to the second conductive type semiconductor layer 123 through the second pad metal layer 152 and the ohmic reflective layer 130. Also, the second pad metal layer 152 may be omitted. At this time, the second protruding pad 180 may directly contact the ohmic reflective layer 130.

[0097] The first and second protruding pads 170 and 180 are formed such that their lower portions can cover the lower surface of the second insulating layer, thereby having a larger adhesion area to the external structure, thereby achieving reliable connection between the LED chip 100 and the external structure.

[0098] In the present embodiment, the light emitting diode chip 100 is described as including a first protruding pad 170 and a second protruding pad 180 covering the lower surface of the second insulating layer 160. However, the structure of the light emitting diode chip 100 is not limited thereto. For example, the first protruding pad 170 may be provided in the first pad metal layer 151 exposed through the first opening 161 of the second insulating layer 160. Also, the second protruding pad 180 may be provided in the second pad metal layer 152 exposed through the second opening 162 of the second insulating layer 160.

[0099] The first protruding pad 170 and the second protruding pad 180 are formed along the first opening 161 and the second opening 162 of the second insulating layer 160. Therefore, the first protruding pad 170 is arranged along one long side of the LED chip 100. And the second protruding pad 180 is arranged along the other long side of the LED chip 100. That is, the first protruding pad 170 and the second protruding pad 180 are spaced apart from each other in the lateral direction and are arranged along both long sides of the LED chip 100. Figure 1 The first protruding pad 170 and the second protruding pad both have a length that can cross the center line.

[0100] The first raised pad 170 and the second raised pad 180 include a conductive material. For example, the first raised pad 170 and the second raised pad 180 may be formed as a single metal layer including gold or TiN, or may be a multi-layer metal layer stacked by a gold layer and a TiN layer. This is only an embodiment, and the material of the first raised pad 170 and the second raised pad 180 is not limited thereto, and may be formed using any metal among conductive metals.

[0101] In the prior art, a light-emitting diode chip with a rectangular frame is formed with two raised pads on both sides of the center line. The metal density on both sides of the light-emitting diode chip formed in this way is higher than the metal density at the center. Therefore, the light-emitting diode chip with an elongated shape has the problem of being easily bent or broken based on the center line.

[0102] However, the light emitting diode chip according to the present embodiment is formed such that the first and second protruding pads 170 and 180 cross the center line, thereby preventing the problem of bending or breaking based on the center line.

[0103] In this embodiment, although the first protruding pad 170 and the second protruding pad 180 are formed to cross the center line C, the present invention is not limited thereto. That is, the light emitting diode chip 100 may also be formed such that at least one of the first protruding pad 170 and the second protruding pad 180 crosses the center line C. In this case, metal is also disposed on the center line C and its periphery, so the strength near the center line C is increased, thereby preventing the light emitting diode chip 100 from bending or breaking.

[0104] Figure 3 FIG. 1 is an exemplary diagram showing a light emitting diode chip according to a second embodiment of the present invention.

[0105] Figure 3 is a lower plan view showing a light emitting diode chip 200 according to the second embodiment.

[0106] The internal structure of the light emitting diode chip 200 according to the second embodiment is different from that of the light emitting diode chip ( Figure 1 and Figure 2 The description of the same parts of the internal structure of 100 is omitted. The omitted description should refer to the description of the light emitting diode chip ( Figure 1 and Figure 2 100).

[0107] The first opening 161 of the second insulating layer 160 is formed along one long side of the substrate 110 and is continuously formed along one short side. Also, the second opening 162 of the second insulating layer 160 is formed along the other long side of the substrate 110 and is continuously formed along the other short side. Also, the first opening 161 and the second opening 162 of the second insulating layer 160 are arranged to cross the center line of the substrate. The first opening 161 of the second insulating layer 160 thus formed is formed with a first protruding pad 270, and the second protruding pad 280 is formed at the second opening 162. The first protruding pad 270 includes a first elongated portion 271 and a first extending portion 272.

[0108] The first elongated portion 271 is formed elongated along one long side of the substrate 110. The first elongated portion 271 is connected to the light emitting diode chip ( Figure 1 and Figure 2 The first raised pad (100) Figure 1 and Figure 2 The same as 170).

[0109] The first extension portion 272 extends from one end of the first elongated portion 271 and is formed along one short side of the substrate 110 . That is, the first extension portion 272 is formed to protrude from the first elongated portion 271 toward the other long side of the substrate 110 .

[0110] The second raised pad 280 includes a second elongated portion 281 and a second extending portion 282 .

[0111] The second elongated portion 281 is formed elongated along the other long side of the substrate 110. The second elongated portion 281 is connected to the light emitting diode chip ( Figure 1 and Figure 2 The second raised pad of 100) is the same.

[0112] The second extension portion 282 extends from one end of the second elongated portion 281 and is formed along the other short side of the substrate 110 . That is, the second extension portion 282 is formed to protrude from the second elongated portion 281 toward one long side of the substrate 110 .

[0113] Thus, at least a portion of the first elongated portion 271 and the second elongated portion 281 of the first protruding pad 270 and the second protruding pad 280 will face each other, and at least a portion of the first extension portion 272 and the second extension portion 282 will face each other. In addition, the first elongated portion 271 of the first protruding pad 270 and the second elongated portion 281 of the second protruding pad 280 are arranged to cross the center line C.

[0114] The light emitting diode chip 200 of the present embodiment can be prevented from being bent or broken by the structures of the first elongated portion 271 of the first protruding pad 270 and the second elongated portion 281 of the second protruding pad 280 .

[0115] Furthermore, since the first elongated portion 271 is extended with the first extension portion 272, and the second elongated portion 281 is extended with the second extension portion 282, the light-emitting diode chip 200 can have the first protruding pad 270 and the second protruding pad 280 with a wider area than that of the first embodiment. Thus, the light-emitting diode chip 200 can have a wider bonding area for bonding with the external component. Furthermore, when testing the light-emitting diode chip 200 or the package including the light-emitting diode chip, the wider area of ​​the first protruding pad 270 and the second protruding pad 280 is easy to be contacted by a probe. That is, the probe contacts the wider part of the first protruding pad and the second protruding pad, so that the test error due to poor contact can be prevented, thereby realizing reliable testing.

[0116] Figures 4 to 6 FIG. 1 is a diagram showing another exemplary light emitting element according to the first embodiment of the present invention.

[0117] Figure 4 is a plan view of a light emitting element 300 according to the first embodiment, Figure 5 yes Figure 4 Side profile (B1-B2), Figure 6 yes Figure 4 The other side cross-section (B3-B4).

[0118] refer to Figures 4 to 6 According to the first embodiment, the light emitting element 300 includes a light emitting diode chip 100 , a wavelength conversion component 310 and a white blocking component 320 .

[0119] In this embodiment, the light emitting diode chip 100 is the light emitting diode chip according to the first embodiment ( Figure 1 and Figure 2 Therefore, the structure and description of the internal structure of the light emitting diode chip 100 should be referred to. Figure 1 and Figure 2 The light emitting diode chip 100 of the light emitting element 300 according to the first embodiment is not limited to the light emitting diode chip ( Figure 1 and Figure 2 100), may also be the light emitting diode chip according to the second embodiment ( Figure 3 of 200).

[0120] The wavelength conversion component 310 is formed to surround the side and upper surface of the light emitting diode chip 100. The wavelength conversion component 310 converts the wavelength of light emitted from the light emitting diode chip 100, so that white light or light of a color required by the user can be emitted from the light emitting element 300. As an example, the wavelength conversion component can be a phosphor layer in which a phosphor that can convert the wavelength of light is mixed in a transparent resin. For example, the transparent resin can be transparent silicone. As the phosphor, a yellow phosphor, a red phosphor, a green phosphor, etc. can be used.

[0121] As an example of a yellow phosphor, YAG: Ce (T3Al5O4) which is yttrium (Y) aluminum (Al) garnet doped with cerium (Ce) and having a main wavelength of 530 to 570 nm can be cited. 12 : Ce) series phosphors or silicate series phosphors.

[0122] As an example of a red (R) phosphor, there can be mentioned a YOX (Y2O3:EU) series phosphor composed of a compound of yttrium oxide (Y2O3) and europium (Eu) having a main wavelength of 611 nm or a nitride phosphor.

[0123] As an example of a green (G) phosphor, there can be mentioned a LAP (LaPO 4 :Ce, Tb) series phosphor which is a compound of phosphoric acid (PO 4 ), lanthanum (La), and terbium (Tb) having a main wavelength of 544 nm.

[0124] In a specific embodiment, the wavelength conversion component 310 may include a blue phosphor. As an example of a blue (B) phosphor, BAM (BaMgAl2O3) which is a compound of a substance of a series of barium (Ba) and magnesium (Mg) with a wavelength of 450 nm as the main wavelength and europium (Eu) may be cited. 10 O 17 :Eu) series of phosphors are taken as examples.

[0125] Also, the phosphor may include a KSF phosphor (K2SiF6) which is a fluorine-containing compound of a Mn4+ active agent phosphor that facilitates wide color gamut reproduction.

[0126] According to the present embodiment, the thickness t1 of the wavelength conversion member 310 formed on the side of the LED chip 100 is smaller than the thickness t2 of the LED chip 100. Here, the thickness of the LED chip 100 is the thickness from the upper surface to the small face of the LED chip 100.

[0127] Furthermore, the thickness t1 of the wavelength conversion member 310 formed on the side surface of the LED chip 100 is greater than the thickness t3 of the wavelength conversion member formed on the upper surface of the LED chip 100 .

[0128] If the thickness t1 of the wavelength conversion component 310 formed on the side of the LED chip 100 is too small, the light emitted from the side of the LED chip 100 is reflected by the side of the white blocking component 320, and can be reabsorbed into the LED chip 100. In order to prevent this, the sides of the LED chip 100 and the white blocking component 320 should have a sufficient distance from each other. Here, the side of the white blocking component 320 is the inner wall facing the side of the LED chip 100. Therefore, the wavelength conversion component 310 formed between the side of the LED chip and the white blocking component 320 should be formed to have a sufficient thickness. However, if the thickness t1 of the wavelength conversion component 310 formed on the side of the LED chip 100 is too thick, the size of the light emitting element 300 will become larger. Therefore, the wavelength conversion component 310 formed on the side of the LED chip 100 can be formed to be smaller than the thickness t2 of the LED chip 100.

[0129] The white blocking member 320 only covers the two side surfaces of the long sides of the wavelength conversion member 310. Figure 4The white blocking member 320 covers the side surfaces of the wavelength conversion member 310 along the two long sides of the substrate 110 to expose the side surfaces of the wavelength conversion member 310 covering the two short sides of the substrate 110. Since the white blocking member 320 is formed to cover only the two side surfaces of the long sides of the wavelength conversion member 310, the lower surface of the wavelength conversion member 310 and the lower surface of the light emitting diode chip 100 are exposed to the outside.

[0130] By means of the white blocking member formed in this way, the first protruding pad 170 and the second protruding pad 180 of the light emitting diode chip 100 protrude from the lower surface of the light emitting element 300. Since the first protruding pad 170 and the second protruding pad 180 protrude, when the light emitting element 300 is fixed to the external structure, it is easy to accurately align with the external pad of the external structure. Therefore, the light emitting element 300 of this embodiment can achieve reliable adhesion with the external structure. Although Figures 4 to 6 Although not shown in the figure, the lower surface of the first protruding pad 170 and the second protruding pad 180 of the light emitting element 300 may be provided with a conductive adhesive component for adhesion with external components. Since the first protruding pad 170 and the second protruding pad 180 of the light emitting element 300 of this embodiment are exposed to the outside, not only a paste type adhesive component such as solder can be used, but also a film type adhesive component can be used. In the case of the film type adhesive component, the fluidity is lower than that of the paste type, so the short circuit phenomenon between the first protruding pad and the second protruding pad due to the adhesive component can be reduced.

[0131] Furthermore, the white blocking member 320 is formed so that its upper surface has an inclined surface. One end of the upper surface of the white blocking member 320 and the upper surface of the wavelength conversion member 310 may be located on the same line. Here, one end of the upper surface of the white blocking member 320 is an edge including the upper corner of the inner wall on the upper surface, and the other end is an edge including the upper corner of the outer wall. Furthermore, the height of the upper surface of the white blocking member 320 gradually increases from the inner wall toward the outer wall of the white blocking member 320.

[0132] If one end of the upper surface of the white blocking member 320 is located at a higher position than the upper surface of the wavelength conversion member 310, part of the light emitted from the wavelength conversion member 310 will hit the inner wall of the white blocking member 320. That is, the directivity angle of the light emitting element 300 will be narrowed, and the light extraction efficiency will be reduced.

[0133] Furthermore, if one end of the upper surface of the white blocking member 320 is located at a lower height than the upper surface of the wavelength conversion member 310, a portion of the upper surface of the white blocking member 320 may be covered by a process or an external environment. In this case, since the light from the LED chip 100 cannot reach the wavelength conversion member 310 on the white blocking member 320, a color corresponding to the phosphor of the wavelength conversion member 310 may be emitted from a portion of the wavelength conversion member 310.

[0134] Thus, one end of the upper surface of the white blocking member 320 should be located on the same line as the upper surface of the wavelength conversion member 310 , and the other end should be located at a higher position than the one end to prevent the wavelength conversion member 310 from covering the upper surface of the white blocking member 320 .

[0135] Furthermore, the directivity angle of the light from the light emitting element 300 can be changed by changing the inclination of the upper surface of the white blocking member 320 .

[0136] The white blocking member 320 may include epoxy molding compound (EMC) or silicone molding compound (SMC).

[0137] Figures 7 to 9 1 is a diagram showing an example of a light emitting element according to a second embodiment of the present invention.

[0138] Figure 7 is a plan view of a light emitting element 400 according to a second embodiment, Figure 8 yes Figure 7 Side profile (D1-D2), Fig. 9 yes Figure 7 The other side cross-section (D3-D4)

[0139] refer to Figures 7 to 9 According to the second embodiment, the light emitting element 400 includes a light emitting diode chip 100 , a wavelength conversion component 310 and a white blocking component 420 .

[0140] In this embodiment, the light emitting diode chip 100 is different from the light emitting diode chip according to the first embodiment ( Figure 1 and Figure 2 Therefore, the structure and description of the internal structure of the light emitting diode chip 100 should be referred to. Figure 1 and Figure 2 .

[0141] The white blocking member 420 includes a bottom portion 421 and a side portion 422. Here, the bottom portion 421 includes a bottom surface on which the light emitting diode chip 100 is mounted, and the side portion 422 includes a side surface of the light emitting diode chip 100.

[0142] The bottom portion 421 of the white blocking member 420 is formed to be arranged on the lower surface of the light emitting diode chip 100 to cover the lower surface. The side portion 422 of the white blocking member 420 is formed to be arranged on the upper portion of the bottom portion 421 to cover the side of the wavelength conversion member 310. That is, the light emitting element 400 has a structure in which the light emitting diode chip 100 formed with the wavelength conversion member 310 is installed in the cavity 423 formed by the bottom portion 421 and the side portion. The white blocking member 420 may include a substance that reflects light. Alternatively, the inner wall of the white blocking member 420 forming the cavity 423 may be plated with an emitting substance.

[0143] The bottom surface 421 is formed such that a portion of the upper surface protrudes upward. The portion protruding upward is located between the first protruding pad 170 and the second protruding pad 180 of the light emitting element 400 when the light emitting element 400 is mounted on the cavity 423 of the white blocking member 420 .

[0144] The protruding portion of the bottom surface 421 plays a guiding role in guiding the mounting position of the light emitting element 400. Therefore, the light emitting element 400 can be mounted at the correct position by the protruding portion of the bottom surface 421. Accordingly, accurate alignment between the light emitting element 400 and the conductive adhesive component 430 can be achieved.

[0145] Furthermore, a plurality of through holes 424 are formed in the bottom surface portion 421. The through holes 424 are filled with a conductive adhesive member 430. For example, the conductive adhesive member 430 may be solder.

[0146] The through hole 424 has an inclined inner wall. Since the inner wall of the through hole 424 is inclined, the bonding area with the conductive adhesive component 430 is increased compared to the case where the inside of the through hole is perpendicular to the bottom. Accordingly, the bonding force between the conductive adhesive component 430 and the white blocking component 420 can be increased. In addition, the path from the lower surface of the white blocking component 420 to the first protruding pad 170 and the second protruding pad 180 of the light-emitting diode chip 100 will be increased. Thus, the problem of moisture or dust penetrating from the outside of the light-emitting element 400 to the inside is reduced.

[0147] Also, the through hole 424 may be formed to have a width gradually reduced from the upper portion to the lower portion, thereby preventing the conductive adhesive member 430 filling the through hole 424 from being separated to the outside of the white blocking member 420 due to external impact after being hardened.

[0148] Furthermore, the through hole 424 is formed such that the width of the upper portion thereof is smaller than the width of the lower surface of the first protruding pad 170 and the second protruding pad 180 of the LED chip 100. Accordingly, the conductive adhesive member 430 filling the through hole 424 also has a smaller width than the first protruding pad 170 and the second protruding pad 180. Therefore, when the LED chip 100 is mounted on the white blocking member 420, even if a slight alignment error occurs, poor contact in which the LED chip 100 does not contact or mistakenly contacts the conductive adhesive member 430 can be prevented from occurring.

[0149] Also, the conductive adhesive member 430 has a width that gradually decreases from the upper portion to the lower portion thereof. Thus, when the light emitting element 400 is fixed to an external structure, proper adhesion between the light emitting element 400 and the external structure can be easily achieved.

[0150] Furthermore, the width of the through hole 424 gradually decreases toward the bottom, so the distance between the first conductive adhesive component 431 and the second conductive adhesive component 432 gradually increases toward the bottom. Here, the first conductive adhesive component 431 is adhered to the first protruding pad 170, and the second conductive adhesive component 432 is adhered to the second protruding pad 180. Therefore, when the light emitting element 400 is connected to an external structure, the first conductive adhesive component 431 and the second conductive adhesive component 432 are simultaneously adhered to the same pad of the external structure to prevent a short circuit.

[0151] The conductive adhesive member 430 filled in the plurality of through holes 424 is connected to the first bump pad 170 and the second bump pad 180 of the LED chip 100 disposed in the cavity 423 of the white blocking member 420. At this time, the first bump pad 170 and the second bump pad 180 are connected to the conductive adhesive member 430 filled in different through holes 424.

[0152] For example, the through hole 424 may be formed in a shape corresponding to the first protruding pad 170 and the second protruding pad 180 of the light emitting diode chip 100. However, the structure of the through hole 424 is not limited thereto. As long as the light emitting diode chip 100 and the external structure can be electrically connected through the conductive adhesive member 430 filled in the through hole 424, the through hole 424 may be formed in any structure.

[0153] When describing this embodiment, the light emitting diode chip ( Figure 1 and Figure 2 100) is used as an example. However, the light emitting element 400 according to this embodiment can also be applied to the light emitting diode chip ( Figure 3 of 200).

[0154] Figures 10 to 12 1 is an exemplary diagram showing a light emitting element according to a third embodiment of the present invention.

[0155] Fig.10 is a plan view of a light emitting element 500 according to a third embodiment, Fig.11 yes Fig.10 A side cross-sectional view (E1-E2) of Fig.12 yes Fig.10 The other side cross-section view (E3-E4).

[0156] refer to Figures 10 to 12 According to the third embodiment, the light emitting element 500 includes a light emitting diode chip 200 , a wavelength conversion component 310 and a white blocking component 520 .

[0157] The light emitting element 500 according to the third embodiment includes the light emitting diode chip ( Figure 3 Alternatively, in this embodiment, although the light emitting element 500 includes the light emitting diode chip ( Figure 3 200) is described as an example, but the light emitting diode chip ( Figure 1 and Figure 2 of 100).

[0158] The white blocking member 520 includes a bottom portion 521 and a side portion 522. The bottom portion 521 of the white blocking member 520 is formed with through holes 524 formed in a structure corresponding to the first and second bump pads 270 and 280 of the LED chip 200. Fig.10 The structures of the through holes 524 at E1-E2 and E3-E4 are respectively Fig.11 and Fig.12 The structure is the same as shown in the figure.

[0159] The inner wall of the side surface portion 522 of the white blocking member 520 of the light emitting element 500 according to the third embodiment has an inclination. That is, the side surface portion 522 of the white blocking member 520 is formed so that the diameter of the cavity 523 gradually increases from the lower surface to the upper surface. The inclined inner wall of the side surface portion 522 of the white blocking member 520 can reflect the light emitted from the side surface of the light emitting diode chip 200 toward the upper direction. Thus, the light efficiency of the light emitting element 500 can be improved.

[0160] In addition, a through hole 524 filled with the conductive adhesive member 430 is formed in the white blocking member 520. The inner wall of the white blocking member 520 constituting the through hole 524 is also formed in an inclined manner. The inner wall of the white blocking member 520 constituting the cavity 523 in the white blocking member 520 and the inner wall of the white blocking member 520 constituting the through hole 524 may have different inclinations from each other. For example, the inclination angle α1 of the inner wall of the white blocking member 520 constituting the through hole 524 may be greater than the inclination angle α2 of the inner wall of the white blocking member 520 constituting the cavity 523. The smaller the inclination α1 of the inner wall of the white blocking member 520 constituting the through hole 524, the greater the adhesion area between the white blocking member 520 and the conductive adhesive member 430.

[0161] Fig.13 FIG. 1 is a diagram showing an example of a light emitting module according to a first embodiment of the present invention.

[0162] refer to Fig.13 According to the first embodiment, the light emitting module 600 includes a circuit substrate 610 and a light emitting element 630 .

[0163] A light emitting element 630 is mounted on the circuit substrate 610. In addition, wiring electrically connected to the mounted light emitting element 630 is formed on the circuit substrate 610. For example, the circuit substrate 610 may be a printed circuit board or a flexible printed circuit board having wiring formed on an insulating layer. Alternatively, the circuit substrate 610 may be a metal substrate having wiring formed on an insulating layer formed on the surface of a metal layer. Alternatively, the circuit substrate 610 may be a synthetic resin substrate such as resin, glass epoxy resin, or a ceramic substrate. Alternatively, the circuit substrate 610 may be formed by selecting any one or more of epoxy mold compound (EMC: Epoxy Mold Compound), polyimide (PI), ceramic, graphene, glass synthetic fiber, and a combination thereof.

[0164] The circuit substrate 610 is divided into a first area 611 and a second area 612 .

[0165] The first region 611 is mounted with a light emitting element 630. The light emitting element 630 is mounted on the first region 611 so as to be electrically connected to the wiring of the circuit substrate. Although not shown in the drawings, a circuit pattern for electrical connection with the light emitting element 630 is formed in the first region 611 of the circuit substrate 610. The circuit pattern formed on the circuit substrate 610 is formed into a structure corresponding to the lower surface of the protruding pad (not shown) of the light emitting element 630.

[0166] The first region 611 is disposed to face the side surface of the light guide plate 620 into which the light emitted from the light emitting element 630 is incident.

[0167] The second region 612 is folded to be perpendicular to the first region 611. That is, the second region 612 is configured to protrude from the first region 611 toward the light guide plate 620 or to face the lower surface of the light guide plate 620.

[0168] A plurality of light emitting elements 630 are disposed in the first region 611 of the circuit substrate 610. The light emitting element 630 may be a light emitting diode chip ( Figures 1 to 3 100,200) packages.

[0169] For example, in the first region 611 of the circuit substrate 610, a circuit pattern pair including two circuit patterns formed elongated along the long side direction and parallel to each other may be exposed to the outside. The circuit substrate 610 as described above may be configured with a light emitting diode chip ( Figure 1 and Figure 2 100) of the light emitting element 630.

[0170] Furthermore, in the first region 611 of the circuit substrate 610, a pair of circuit patterns formed elongated along the long side direction and bent toward each other may be exposed to the outside. Here, one end of one circuit pattern may be bent toward the other circuit pattern, and one end of the other circuit pattern may be bent toward the one circuit pattern. At this time, the circuit substrate 610 may be provided with a light emitting diode chip ( Figure 3 200) of the light emitting element 630.

[0171] Furthermore, the light emitting element 630 may include the light emitting element ( Figures 3 to 12 For detailed description of the light emitting diode chip, wavelength conversion component and white blocking component constituting the light emitting element 630, please refer to Figures 1 to 12 .

[0172] The plurality of light emitting elements 630 are arranged side by side along the length direction of the first region 611 .

[0173] The light emitting diode chip is the light emitting diode chip according to the second embodiment ( Figure 3 200), a first protruding pad is formed along the short side ( Figure 3 270) or the second raised pad ( Figure 3 That is, due to the LED chip ( Figure 3A protruding pad is formed on both short sides of the light emitting element 200, so there is no space between the protruding pads. Therefore, the light emitting element 630 does not absorb the light emitted from the side of other light emitting elements arranged side by side, but can be reflected by the protruding pad. Accordingly, the light emitting module 600 can reduce the occurrence of dark spots between the light emitting elements 630 and improve the light extraction efficiency.

[0174] As an embodiment, the first raised pad ( Figure 3 270) and the second raised pad ( Figure 3 280) includes a gold layer, thereby having a color similar to yellow. Also, the light emitting diode chip ( Figure 3 200) can emit blue light, the wavelength conversion component ( Figure 3 310) may include a yellow phosphor. At this time, the light emitted by the light emitting element is the light excited by the yellow phosphor, so the light emitted from the side of another adjacent light emitting element 630 may be on the first protruding pad ( Figure 3 270) and the second raised pad ( Figure 3 Therefore, since the light emitting module 600 according to the present embodiment can also reflect light at the side of the light emitting element 630, the light reflectivity can be improved.

[0175] Fig.14 FIG. 1 is a diagram showing an example of a light emitting module according to a second embodiment of the present invention.

[0176] refer to Fig.14 According to the second embodiment, the light emitting module 700 includes a circuit substrate 610 , a light emitting element 630 and a Zener element 710 .

[0177] The description of the circuit substrate 610 and the light emitting element 630 should refer to the description of the light emitting module according to the first embodiment ( Fig.13 600) A circuit substrate and a light emitting element.

[0178] A plurality of light emitting elements 630 and a plurality of voltage stabilizing elements 710 are disposed in the first region 611 of the circuit substrate 610. The voltage stabilizing elements 710 are disposed between the light emitting elements 630. In addition, each voltage stabilizing element 710 is connected in parallel with each light emitting element 630. The voltage stabilizing elements 710 bypass a sudden high voltage such as electrostatic discharge (ESD) or surge to prevent it from being applied to the light emitting diode chip, thereby protecting the light emitting diode chip.

[0179] The voltage stabilizing element includes a voltage stabilizing diode chip (not shown) and a white blocking component (711) surrounding the voltage stabilizing diode chip. The white blocking component 711 of the voltage stabilizing element 710 may include silicone resin or epoxy resin.

[0180] In this example, light generated from the light emitting element 630 and directed toward the voltage stabilizing element 710 is reflected by the white blocking member 711 of the voltage stabilizing element 710. The reflected light may be directed toward the side of the light guide plate 620, thereby improving the light efficiency of the light emitting module 700.

[0181] Figures 15 to 18 1 is an exemplary diagram showing a light emitting element according to a fourth embodiment of the present invention.

[0182] Fig.15 is a plan view of a light emitting element 1100 according to the fourth embodiment. Fig.16 and Fig.17 is a cross-sectional view (F1-F2, F3-F4) of the light emitting element 1100 according to the fourth embodiment. And, Fig.18 FIG. 1 is a bottom view of the light emitting element 1100 according to the fourth embodiment.

[0183] The light emitting element 1100 according to the fourth embodiment includes a light emitting diode chip 1110 , a wavelength conversion member 1120 , a white blocking member 1130 , and a conductive adhesive member 1140 .

[0184] The LED chip 1110 of this embodiment has a cross section with a lower frame of a rectangular structure including a long side and a short side. Here, the long side is a longer side of the lower frame, and the short side is a side shorter than the long side.

[0185] The light emitting diode chip 1110 is a structure in which a light emitting structure, an ohmic reflective layer, a pad metal layer and a protruding pad are patterned and stacked on a substrate. The description of the light emitting structure, the ohmic reflective layer and the pad metal layer of the light emitting diode chip 1110 should refer to the description of the light emitting diode chip described above. However, the light emitting diode chip of this embodiment is as follows: Fig.16 and Fig.18 As shown in FIG. 1 , the first protruding pad 1115 and the second protruding pad 1116 may be arranged side by side along the longer side. Also, the first protruding pad 1115 and the second protruding pad 1116 may be symmetrical structures to each other.

[0186] The wavelength conversion component 1120 is formed to surround the side and upper surface of the light-emitting diode chip 1110. The wavelength conversion component 1120 converts the wavelength of the light emitted from the light-emitting diode chip 1110, so that the light-emitting element 1100 emits white light or light of the color required by the user. As an example, the wavelength conversion component 1120 can be a component in which a wavelength conversion substance that converts the wavelength of light is mixed in a light-transmitting resin. For example, the light-transmitting resin can be a transparent silicone resin. In addition, the wavelength conversion substance can be a phosphor. As the phosphor, a yellow phosphor, a red phosphor, and a green phosphor can be used. In this embodiment, although the wavelength conversion component 1120 converts the wavelength of the light emitted from the light-emitting diode chip 1110, it is not limited to this. The light-emitting diode chip 1110 can also be surrounded by a light-transmitting resin without a wavelength conversion substance instead of the wavelength conversion component 1120.

[0187] The white blocking member 1130 covers the lower surface of the light emitting diode chip 1110 and the lower surface and side surfaces of the wavelength conversion member 1120 .

[0188] refer to Fig.16 The white blocking member 1130 covers the lower surface of the LED chip 1110 and the lower surface of the wavelength conversion member 1120 except the lower portions of the first protruding pads 1115 and the second protruding pads 1116. The white blocking member 1130 also fills the space between the first protruding pads 1115 and the second protruding pads 1116 of the LED chip 1110.

[0189] And, reference Fig.15 and Fig.17 , the white blocking member 1130 covers only the two side surfaces of the long sides of the wavelength conversion member 1120. That is, the white blocking member 1130 exposes the two side surfaces of the short sides of the wavelength conversion member 1120.

[0190] Therefore, the white blocking member 1130 exposes the upper surface and both sides of the short side of the wavelength conversion member 1120, and the portion exposed by the white blocking member 1130 becomes an emission surface for emitting light. That is, the light emitting element 1100 according to this embodiment emits light from the upper surface and both sides of the short side. The light emitting element 1100 can reduce the directional angle of the light emitted from the upper surface by the white blocking member 1130 having the structure as described above.

[0191] Furthermore, the inner wall of the white blocking member 1130 is an inclined structure, and the inner wall of the white blocking member 1130 is inclined so as to gradually move away from the side surface of the light emitting diode chip 1110 from the bottom to the top.

[0192] The inclined inner wall of the white blocking member 1130 can reflect the light emitted from the side of the LED chip 1110 upward. Therefore, the light emitted from the side of the long side of the LED chip 1110 is reflected toward the upper surface as the emission surface, thereby improving the light efficiency of the light emitting element 1100.

[0193] The white blocking member 1130 may include epoxy molding compound (EMC) or silicone molding compound (SMC).

[0194] The conductive adhesive component 1140 is located at the lower part of the LED chip 1110 and passes through the white blocking component 1130. The conductive adhesive component 1140 is connected to the first protruding pad 1115 and the second protruding pad 1116 of the LED chip 1110 respectively. Fig.18 As shown, the lower surface of the conductive adhesive member 1140 is exposed at the lower surface of the white blocking member 1130. The conductive adhesive member 1140 formed in this way plays a role of electrically connecting the light emitting diode chip 1110 and the outside. For example, the conductive adhesive member 1140 may include solder.

[0195] According to the present embodiment, the thickness W1 of the wavelength conversion member 1120 formed on the side of the long side of the LED chip 1110 is greater than the thickness W2 of the wavelength conversion member 1120 formed on the shorter side.

[0196] If the LED chip 1110 and the white blocking member 1130 are too close, the light reflected from the white blocking member 1130 is incident on the LED chip 1110 again, thereby reducing the light efficiency of the light emitting element 1100. Therefore, the LED chip 1110 and the white blocking member 1130 should be spaced apart from each other to such an extent that the light reflected from the white blocking member 1130 is prevented from being incident on the LED chip 1110 again. That is, the thickness of the wavelength conversion member 1120 formed on the side of the long side of the LED chip 1110 should be thick.

[0197] Furthermore, when a plurality of light emitting elements 1100 are arranged side by side in such a manner that the exposed sides of the wavelength conversion member 1120 face each other, a dark spot phenomenon may occur because light cannot reach the region between the adjacent light emitting elements 1100. Therefore, in order to arrange the light emitting diode chips 1110 of the light emitting elements 1100 close to each other to prevent the dark spot phenomenon, the thickness of the wavelength conversion member 1120 formed on the side of the short side of the light emitting diode chip 1110 should be thin.

[0198] Figures 19 to 301 is a diagram showing an example of a light emitting element production process according to an embodiment of the present invention.

[0199] refer to Fig.19 A first adhesive film 20 is stacked on the support substrate 10. The first adhesive film 20 fixes the light-emitting diode chip to the support substrate 10 so that the light-emitting diode chip does not move during the production process. For example, the first adhesive film 20 may be a heat-peelable adhesive film whose adhesive force decreases when heated.

[0200] refer to Fig. 20 A first light-transmitting component 1121 is formed on the first adhesive film 20 .

[0201] The first light-transmitting component 1121 may be plated on the first adhesive film 20 by screen printing. After the first light-transmitting component 1121 is plated on the first adhesive film 20, the first light-transmitting component 1121 may be ground to flatten the upper surface. For example, the first light-transmitting component 1121 may be ground by fly cuntting.

[0202] For example, the first light-transmitting member 1121 may be a transparent silicone resin. Alternatively, the first light-transmitting member 1121 may include a wavelength conversion substance in the transparent silicone resin. For example, the wavelength conversion substance may be a fluorescent substance.

[0203] refer to Fig.21 A plurality of light emitting diode chips 1110 are disposed on the first light transmissive member 1121 . The light emitting diode chips 1110 are disposed with the first protruding pads 1115 and the second protruding pads 1116 facing upward, and the upper surfaces thereof are in contact with the first light transmissive member 1121 .

[0204] refer to Fig. 22 A conductive adhesive component 1140 is formed on the first bump pad 1115 and the second bump pad 1116 of the light emitting diode chip 1110. For example, the conductive adhesive component 1140 may be formed by plating solder on the first bump pad 1115 and the second bump pad 1116 by screen printing.

[0205] refer to Fig.23, a second light-transmitting component 1122 is formed. The second light-transmitting component 1122 is formed to cover the side of the light-emitting diode chip 1110 on the first light-transmitting component 1121. At this time, the second light-transmitting component 1122 is plated to fill the space between adjacent light-emitting diode chips 1110. At this time, the second light-transmitting component 1122 is plated to such an extent that it does not cover the side of the conductive adhesive component. For example, the second light-transmitting component 1122 can be plated using a dispenser that can discharge a predetermined amount of resin. The first light-transmitting component 1121 and the second light-transmitting component 1122 can be made of the same material. If the first light-transmitting component 1121 and the second light-transmitting component 1122 can be made of the same material, they can become a light-transmitting component 1123. If a wavelength conversion substance is dispersed in the light-transmitting component 1123, the light-transmitting component 1123 of this embodiment corresponds to the light-emitting element according to the fourth embodiment ( Figures 15 to 18 1100) wavelength conversion component ( Figures 15 to 18 of 1120).

[0206] refer to Fig.24 , the light-transmitting member 1123 is patterned. The light-transmitting member 1123 is cut to be inclined on the side. For example, the light-transmitting member 1123 gradually becomes thicker from the upper part to the lower part. That is, the light-transmitting member 1123 may have a thickness that gradually becomes thicker from the upper surface to the lower surface of the light-emitting diode chip 1110.

[0207] refer to Fig.25 A white blocking component 1130 is formed on the first adhesive film 20 to cover the light-transmitting component 1123 , the light-emitting diode chip 1110 and the conductive adhesive component 1140 .

[0208] For example, the white blocking member 1130 may be formed by plating epoxy resin or silicone resin in a screen printing manner.

[0209] According to the present embodiment, the white blocking member 1130 is plated to cover the LED chips 1110 and the conductive adhesive member 1140 exposed to the outside through the light-transmitting member 1123, so as to fill the space between the first protruding pad 1115 and the second protruding pad 1116 of each LED chip 1110. Therefore, the method for producing the light-emitting element of the present embodiment can omit the underfill process of filling the space between the first protruding pad 1115 and the second protruding pad of the LED chip 1110.

[0210] refer to Fig.26 , the upper portion of the white blocking member 1130 is ground. For example, the white blocking member 1130 is ground in a fly-cutting manner until the conductive adhesive member 1140 is exposed to the outside.

[0211] refer to Fig. 27The white blocking member 1130 between adjacent light emitting diode chips 1110 is cut by a cutting process. Fig. 27 The dicing process is performed along the dicing line DL shown in the figure. Through the dicing process, the LED chip 1110, the light-transmitting component 1123 and the white blocking component are separated into individual light-emitting elements 1100. In addition, each light-emitting element 1100 can be marked on the white blocking component 1130 using a laser so that the electrode direction of each LED chip 1110 can be known.

[0212] refer to Fig.28 , the individually distinguished light emitting elements 1100 are separated from the first adhesive film 20 .

[0213] If the first adhesive film is a heat-peelable adhesive film, the first adhesive film 20 may be heated to reduce the adhesive force so as to separate the plurality of light-emitting elements from the first adhesive film 20 .

[0214] refer to Fig.29 The light emitting elements 1100 separated from each other are arranged on the second adhesive film 30 formed on the support substrate 10. At this time, the light emitting elements 1100 are arranged with their upper surfaces facing upward. Therefore, the lower surface of the white blocking member 1130 of the light emitting element 1100 is adhered to the second adhesive film 30.

[0215] refer to Fig.30 The upper surface of the light emitting element 1100 is ground and planarized. For example, the upper surface of the light emitting element 1100 may be ground by fly cutting.

[0216] Afterwards, the second adhesive film 30 may be removed. Also, the individually separated light emitting elements 1100 are transferred to another adhesive film for subsequent processes.

[0217] Figure 31 to Figure 33 1 is an exemplary diagram showing a light emitting element according to a fifth embodiment of the present invention.

[0218] Fig.31 is a plan view of a light emitting element 1200 according to the fifth embodiment. Fig.32 and Fig.33 are cross-sectional views ( G1 - G2 , G3 - G4 ) of a light emitting element 1200 according to a fifth embodiment.

[0219] The light emitting element 1200 includes a light emitting diode chip 1110 , a wavelength conversion component 1120 , and a white blocking component 1230 .

[0220] The LED chip 1110 and the wavelength conversion component 1120 of the light emitting element 1200 according to the fifth embodiment are the same as those of the other embodiments described above, so detailed description of the LED chip 1110 and the wavelength conversion component 1120 is omitted.

[0221] refer to Fig.32 According to this embodiment, the inner wall 1233 of the white blocking member 1230 located on the side of the long side of the light emitting element 1200 includes a first inner wall 1231 and a second inner wall 1232 .

[0222] The first inner wall 1231 of the white blocking member 1230 is connected to the lower portion of the LED chip 1110 or the bottom surface of the white blocking member 1230 , and the second inner wall 1232 is connected to the first inner wall 1231 and extends to the upper surface of the white blocking member 1230 .

[0223] According to the present embodiment, the first inner wall 1231 and the second inner wall 1232 of the white blocking member 1230 have different inclination angles from each other.

[0224] The first inner wall 1231 of the white blocking member 1230 is inclined in a manner having a larger inclination angle than the second inner wall 1232 with respect to the side surface of the light-emitting diode chip 1110. The first inner wall 1231 reflects most of the light emitted from the lower portion of the side surface of the light-emitting diode chip 1110. At this time, the first inner wall 1231 is inclined greatly with respect to the side surface of the light-emitting diode chip 1110, so that the light can be reflected toward the upper surface direction of the light-emitting element 1200. That is, the light-emitting element 1200 of the present embodiment can prevent the light reflected from the first inner wall 1231 from being incident on the light-emitting diode chip 1110 again. Therefore, the light-emitting element 1200 can improve the light-emitting efficiency by means of the first inner wall 1231 of the white blocking member 1230.

[0225] The second inner wall 1232 of the white blocking member 1230 is located above the first inner wall 1231 , and thus reflects most of the light toward the upper surface of the light emitting element 1200 even if it is inclined at a small inclination angle.

[0226] If the inner wall of the white blocking member 1230 is composed of only the first inner wall 1231, the width of the light emitting element 1200 should be larger in order to make the wavelength conversion member 1120 located above the light emitting diode chip 1110 have a sufficient thickness. Therefore, the light emitting element 1200 makes the second inner wall 1232 located above the first inner wall 1231 of the white blocking member 1230 have a smaller inclination angle than the first inner wall 1231, thereby eliminating the need to increase the size of the light emitting element 1200.

[0227] refer to Fig.33The bottom surface 1235 of the white blocking member 1230 located between the two side surfaces of the short side of the light emitting element 1200 and the two side surfaces of the light emitting diode chip 1110 has an inclined angle. Therefore, the height of the bottom surface 1235 of the white blocking member 1230 gradually increases toward the two side surfaces of the light emitting element 1200.

[0228] Therefore, light emitted from the light emitting diode chip toward a lower direction is reflected at the inclined bottom surface 1235 of the white blocking member 1230 to be directed toward an upper surface of the light emitting element 1200 or toward an upper direction of a side surface of the light emitting element 1200 .

[0229] The light emitting element 1200 can maintain miniaturization and improve light emitting efficiency by using the white blocking component 1230 of this embodiment.

[0230] Fig.34 and Fig.35 is an exemplary diagram showing a display device according to an embodiment of the present invention.

[0231] The display device 1300 according to the present embodiment includes a display panel 1310 displaying an image, a backlight unit, a first frame 1321 and a second frame 1322 .

[0232] The first frame 1321 and the second frame 1322 are combined with each other to accommodate the display panel 1310 and the backlight unit.

[0233] The display panel 1310 includes a color filter substrate 1311 and a thin film transistor substrate 1312 that are bonded to face each other and maintain a uniform cell gap. The display panel 1310 may further include a liquid crystal layer disposed between the color filter substrate 1311 and the thin film transistor substrate 1312 depending on the type.

[0234] The backlight unit providing light to the display panel 1310 includes a light emitting module 1330 , a light guide plate 1340 , an optical sheet 1350 , and a reflective sheet 1360 .

[0235] The light emitting module 1330 includes a circuit substrate 1331 and a plurality of light emitting elements 1335 .

[0236] A conductive circuit pattern 1332 for electrically connecting a plurality of light emitting elements 1335 to each other is formed on the circuit substrate 1331 . Fig.35 1 is a diagram showing an example of a circuit substrate 1331 on which a circuit pattern 1332 is formed. Fig.35As shown in the figure, if a light emitting element 1335 is disposed on a circuit pattern 1332 of a circuit substrate 1331, adjacent light emitting elements 1335 are electrically connected in series with each other via the circuit pattern 1332. If a voltage stabilizing element 1339 is also disposed on the circuit substrate 1331, each light emitting element 1335 can be connected in parallel with the voltage stabilizing element 1339 via the circuit pattern 1332.

[0237] The circuit substrate 1331 is arranged such that the light emitting surface of the light emitting element 1335 faces the side of the light guide plate 1340. That is, the backlight unit of the present embodiment is an edge type.

[0238] A plurality of light emitting elements 1335 are arranged at predetermined intervals on the circuit substrate 1331. Here, the light emitting elements 1335 are light emitting elements described in various embodiments of the present invention.

[0239] The two side surfaces of the long sides of the light emitting element 1335 are covered by the white blocking member 1336, thereby reducing the directivity angle of the light emitted from the upper surface of the light emitting element 1335. Therefore, the backlight unit according to this embodiment directs all the light emitted from the upper surface of the light emitting element 1335 toward the side surface of the light guide plate 1340 corresponding to the incident surface, thereby improving the light efficiency.

[0240] Furthermore, the wavelength conversion component 1337 is exposed on both sides of the short side of the light emitting element 1335. That is, the light emitting element 1335 can also emit light from both sides of its short side. Furthermore, the thickness of the wavelength conversion component 1337 exposed on both sides of the short side of the light emitting element 1335 is relatively thin.

[0241] According to the present embodiment, the plurality of light emitting elements 1335 are arranged side by side in such a manner that the exposed sides of the wavelength conversion member 1337 face each other. At this time, light is emitted from the sides of the plurality of light emitting elements 1335, so that the light also reaches the area between the adjacent light emitting elements 1335. However, if the distance between the light emitting diode chips located inside each light emitting element 1335 is large, the light may not be able to fully reach the area between the light emitting elements 1335.

[0242] In this embodiment, since the adjacent light emitting elements 1335 are configured such that the side surfaces formed by the wavelength conversion member 1337 with a relatively thin thickness face each other, the distance between the adjacent light emitting diode chips 1338 can be reduced. Therefore, the light can be fully irradiated to the entire area between the plurality of light emitting elements 1335. Accordingly, the backlight unit can prevent the occurrence of dark spots in the light guide plate 1340 or the display panel 1310 receiving the light emitted from the light guide plate 1340 due to insufficient light in a predetermined area.

[0243] The light guide plate 1340 converts point light emitted from the light emitting element 1335 into surface light.

[0244] The optical sheet 1350 is positioned on the light guide plate 1340 to diffuse and collect light emitted from the light guide plate 1340 .

[0245] The reflective sheet 1360 is located at the lower portion of the light guide plate 1340 , thereby reflecting the light emitted toward the lower portion of the light guide plate 1340 back to the light guide plate 1340 .

[0246] The above detailed description of the present invention is carried out by referring to the embodiments of the accompanying drawings. However, the above embodiments are only preferred examples of the present invention and are not to be understood as being limited to the embodiments of the present invention. Instead, the scope of rights of the present invention should be understood by the scope of the claims and their equivalent concepts.

Claims

1. A light emitting element, comprising: A light emitting diode chip having a first convex pad and a second convex pad formed on the lower surface; A light-transmitting component, covering the side surfaces and the upper surface of the light-emitting diode chip, wherein the upper surface includes a long side and a short side; a white blocking member covering the long sides of the light-transmitting member; and A conductive component is arranged at the bottom of the light emitting diode chip to electrically connect the light emitting diode chip to the outside. The upper surface of the conductive component is connected to the first raised pad and the second raised pad of the light-emitting diode chip. When the light-transmitting member is viewed from the short side, a portion of the light-transmitting member is exposed. The inner wall of the white blocking component is arranged with reflective material, The first protruding pads and the second protruding pads are arranged to be spaced apart from each other in parallel with the long side surfaces of the light transmitting member.

2. The light-emitting element according to claim 1, wherein The light-transmitting component has wavelength conversion material dispersed therein.

3. The light-emitting element according to claim 2, wherein The white blocking member is formed such that an upper surface thereof has an inclined surface.

4. The light-emitting element according to claim 3, wherein The height of the upper surface of the white blocking member gradually increases from the inner wall toward the outer wall of the white blocking member.

5. The light emitting element according to claim 1, wherein The white blocking member includes a bottom portion and a side portion, the bottom portion includes a bottom surface on which the light emitting diode chip is mounted, and the side portion includes a side surface of the light emitting diode chip.

6. The light-emitting element according to claim 5, wherein The bottom surface portion is formed such that a portion of an upper surface protrudes upward, and the portion protruding upward is located between the first protruding pad and the second protruding pad.

7. The light emitting element according to claim 5, wherein: The side surface portion has an inner wall formed so as to be inclined so as to reflect light emitted from the side surface of the light emitting diode chip toward an upper direction.

8. The light-emitting element according to claim 1, wherein An inner wall of the white blocking member covering a side surface of the light-transmitting member has an inclination.

9. The light-emitting element according to claim 8, wherein The inner wall of the white blocking component comprises: a first inner wall connected to the bottom surface of the white blocking component; and a second inner wall connected to the first inner wall and extending to the upper surface of the white blocking component, The first inner wall and the second inner wall have different inclinations from each other.

10. The light emitting element according to claim 9, wherein The white blocking component takes the side surface of the light emitting diode chip as a reference, and the first inner wall has an inclination angle greater than that of the second inner wall.

Images