This includes the main components, as well as the power components for sensor and transmitter units, and systems with power components.

Abstract

A power assembly (100-300) comprises: two electrical terminals (111, 112, 211, 212, 311, 312); an assembly housing (120, 220, 320); a main assembly (110, 210, 310) at least partially enclosed by the assembly housing (120, 220, 320), connected with the two terminals (111, 112, 211, 212, 311, 312), and configured to carry an electric supply current flowing between the two electrical terminals (111, 112, 211, 212, 311, 312); and a sensor and transmitter unit (130, 230, 330) configured to measure a value of a physical quantity (T, V, ΔV) characterizing an operating state of the main assembly (110, 210, 310) and to emit an electromagnetic signal, the measured value of the physical quantity being encoded in the electromagnetic signal. The sensor and transmitter unit (130, 230, 330) comprises an antenna (133) for emitting the electromagnetic signal, the antenna (133) being spaced apart from the main assembly (110, 210, 310) and arranged in, on and / or at the assembly housing (120, 220, 320).

Description

Technical Field

[0001] Embodiments of the present invention relate to power components, particularly power fuses and power semiconductor devices, and to modules and systems having power components, as well as related methods. Background Technology

[0002] In the field of power electronics, power semiconductors capable of switching large currents and / or operating at high voltages, along with corresponding semiconductor fuses, are widely used for various purposes, such as in amplifiers, rectifiers, and converters. The power semiconductor diodes and switches used are typically capable of operating over voltage differences exceeding several 100V and / or handling large currents, such as at least several amperes within the same semiconductor block or body. To further enhance current handling capability, several power semiconductors can be connected in parallel. For safety reasons, one or more power semiconductors can be protected by one or more semiconductor fuses.

[0003] Depending on the load, the temperature of the power semiconductor (semiconductor body) and / or fuse body may change during operation. Consequently, the electronic properties of the devices (such as current-voltage characteristics, diode forward voltage drop, and semiconductor switch switching properties) may change during operation. This can even lead to current imbalances between parallel-coupled power semiconductors. Similarly, temperature can alter fuse operating parameters, such as resistance and voltage drop at a given current, and thus change its breaking capacity.

[0004] Reliably measuring the temperature and other parameters of devices in high-power / high-voltage applications during operation is complex and / or expensive. This is likely because sensors need to be adapted to (physical) conditions under which they must operate without significantly impacting device operation.

[0005] For example, fiber optic sensors are theoretically suitable for measurements under high-voltage conditions, but they are typically relatively large (fiber optic coils). Furthermore, multiple different sensors may be required. The setup can become more complex due to the large number of fibers involved. This can also make assembly and maintenance more difficult. Additionally, measuring and evaluating the measurement data can be complex. Furthermore, additional (optical) interfaces may be required.

[0006] Therefore, the characteristics of the power components need to be further improved during operation. Summary of the Invention

[0007] In summary, the following are provided: the power component according to claim 1, the power module according to claim 17, the system according to claim 20, the method according to claim 28, the method according to claim 30, and the method according to claim 31.

[0008] According to one embodiment of the power assembly, the power assembly includes two electrical terminals, an assembly housing, a main assembly, and sensor and transmitter units. The main assembly is at least partially surrounded by the assembly housing, connected to the two terminals, and configured to carry a power supply current flowing between the two electrical terminals. The sensor and transmitter units are configured to measure values ​​of physical quantities characterizing the operating state of the main assembly and to transmit electromagnetic signals, the measured values ​​of the physical quantities being encoded in the electromagnetic signals. The sensor and transmitter units include an antenna for transmitting the electromagnetic signals. The antenna is spaced apart from the main assembly and arranged within, on, and / or at the assembly housing.

[0009] Because the antenna is spaced apart from the normally conductive main component, the antenna's carrying / receiving properties are not significantly (negatively) affected by the main component, and the antenna does not significantly affect the properties of the main component. Furthermore, since the antenna is used to transmit electromagnetic signals, the measured values ​​of physical quantities can be read out non-contactly.

[0010] This leads to several further advantages. In particular, the wiring of the general setup, especially the power modules and systems using one or more of these power components, can remain unchanged. Even a large number of relevant measurements characterizing the operating state of the main components—one, several, or even a large number of power components—can be read out in this way in a simple and cost-effective manner. Note that the sensor and transmitter units can be relatively small and / or manufactured in large quantities at a relatively low cost using existing technologies. Furthermore, the measured values ​​can be further analyzed (subsequently). In particular, the measured values ​​can be used for condition-based monitoring and / or protection of (one or more) power components, for collecting lifetime data of (one or more) power components, and generally for statistical analysis, for adjusting or even optimizing the operation of power components, and / or even for adjusting or even optimizing the design of (one or more) power components.

[0011] Electromagnetic signals are typically radio frequency signals, such as ultra-high frequency (UHF) radio signals, which are in the frequency range of 300 MHz to 3 GHz.

[0012] The term “high voltage” as used in this application shall encompass AC and DC voltages of at least about 600V, more typically at least about 1kV, or even at least about 5kV.

[0013] The terms “high current” and “supply current” as used in this application shall cover AC and DC currents of at least about 10A, more typically at least about 50A, or even at least about 100A or 1kA.

[0014] The term "high power" as used in this application shall cover electrical power of at least about 2 kW, more typically at least about 5 kW, or even at least about 15 kW.

[0015] Similarly, the term "power assembly" as used in this application should encompass electrical power of at least about 2 kW, more typically at least about 5 kW, or even at least about 15 kW.

[0016] Therefore, the rated current of the main component is at least about 10A and / or the rated power of the main component is at least about 2kW.

[0017] In addition, power components are typically high-voltage components.

[0018] Specifically, the rated voltage of the main components is typically at least about 600V, more typically at least about 680V, ​​or even at least about 1kV or even about 5kV.

[0019] Power components can be configured to control power supply current, particularly to amplify, switch, and / or interrupt power supply current.

[0020] Specifically, the power component can be a power semiconductor device, particularly a vertical power semiconductor device, or a power fuse, typically a so-called semiconductor fuse, i.e., a fuse suitable for protecting a power semiconductor device from overload and / or short circuit. The breaking capacity (the maximum current that the fuse can safely break) can, for example, correspond to ten times the rated current of the power semiconductor device to which the fuse is applicable.

[0021] Power semiconductor devices can be implemented as power semiconductor diodes, power semiconductor transistors, and / or power semiconductor switches, and / or may include one or more power semiconductor diodes and / or one or more power semiconductor switches, particularly corresponding power transistors such as power thyristors, power MOSFETs, or power IGBTs.

[0022] The main components of power semiconductor diodes and power semiconductor switches typically include a corresponding (structured) semiconductor body or die. The semiconductor body or die may include a rectifier junction, particularly a pn junction, functionally coupled between two electrical terminals. Depending on the device type, the semiconductor body or die may also include several pn junctions. Similarly, the two electrical terminals may include more than two terminals, such as two power supply terminals, such as anode and cathode terminals (e.g., in embodiments involving diodes and / or thyristors), and switching terminals, such as a gate terminal for controlling and / or switching the current between the two power supply terminals (e.g., in embodiments involving MOSFETs and / or thyristors).

[0023] The main components of a power fuse typically include or are formed of a conductive element, particularly a calibrated conductor. The conductive element may be surrounded by a filler and enclosed by both a housing and the fuse body. Additionally, a power fuse may include an auxiliary switch for indication and / or remote signaling of fuse tripping.

[0024] Sensor and transmitter units are typically low-power units. In the following text, sensor and transmitter units will also be referred to as sensing and transmitting units.

[0025] As used in this application, the term "low power" should cover a maximum of about 5W of electrical power, more typically about 2W or even about 1W.

[0026] Therefore, the rated power of the sensor and transmitter units is at most 5W, more typically about 2W or even about 1W.

[0027] This allows the sensor and transmitter units to operate for longer periods without needing to be recharged or have their internal power supply replaced.

[0028] Typically, sensor and transmitter units include low-power transmitters, and in particular low-power repeaters for bidirectional communication with readers.

[0029] Low-power repeaters can be corresponding Bluetooth repeaters or RFID repeaters, especially active RFID tags or even passive RFID tags.

[0030] In addition, the sensor and transmitter unit can be provided by one or more RFID sensors or one or more Bluetooth sensors.

[0031] In addition to low cost, RFID tags offer the further advantage of allowing small size, which can facilitate their integration into power components.

[0032] Passive RFID tags have the added advantage that they do not require an internal power source, as they can be powered by electromagnetic energy carried from the RFID reader.

[0033] Furthermore, sensor and transmitter units with Bluetooth or RFID transponders may have been designed and configured to additionally encode the identifiers of the power components into the electromagnetic signals. This can facilitate subsequent evaluation of the measured values ​​of the load.

[0034] Alternatively or additionally, the sensor and transmitter unit may be configured to at least temporarily store several measurements of a physical quantity and encode several measurements of the physical quantity into an electromagnetic signal, typically along with the corresponding measurement time.

[0035] In addition, the sensor and transmitter unit may include a sensor unit and a transmitter unit, the transmitter unit being functionally connected to the sensor unit, typically via a wired connection, and including or at least connected to an antenna.

[0036] Sensor units are typically configured to convert analog input signals representing physical quantities into digital values, store digital values, process digital values, and / or transmit digital values ​​and / or processed digital values ​​to transmitter units.

[0037] The transmitter unit can even be spaced apart from the sensor unit. This facilitates the measurement and transmission of (one or more) measurement values ​​because the sensor unit can be positioned closer to the measurement point, and (one or more) corresponding digital values ​​can be safely transmitted to the transmitter unit, which is positioned at least close to the antenna, even under noisy conditions.

[0038] The sensor and transmitter unit may also include two or more sensor units that are functionally coupled to a transmitter unit.

[0039] Alternatively, the power assembly may include two or more sensor and transmitter units.

[0040] One or more sensor and transmitter units may include and / or implement at least two sensors, each configured to measure a value of a corresponding physical quantity characterizing the operating state of the main component. For example, one or more sensor and transmitter units may be configured to measure two or more temperature values ​​(also referred to as temperatures).

[0041] Specifically, the sensor and transmitter units can be configured to measure the values ​​of different physical quantities, each of which characterizes the operating state of the main component.

[0042] For example, the sensor and transmitter units can be configured to measure the temperature of the main component, the temperature of one or even each of the two electrical terminals, the voltage of one or even each of the two electrical terminals, and / or the voltage drop across the main component and the two terminals, respectively.

[0043] Antennas are typically at least substantially flat and / or implemented as coil antennas.

[0044] Furthermore, the antenna can be positioned on the outside or surface of the component housing. This is because the load-bearing and reception conditions are typically particularly good there.

[0045] At least the antenna is typically attached to the component housing, for example, to the outer surface of the component housing.

[0046] In particular, in embodiments where a power component having one or more RFID tags and RFID sensors is used as the sensor and transmitter units respectively, the sensor and transmitter units can be simply bonded to the component housing.

[0047] The component housing typically includes or is made of dielectric or ceramic.

[0048] The component housing can substantially enclose the main component and typically includes corresponding openings, conduits, or through-holes for two electrical terminals and optionally for wiring used to connect the sensor and transmitter units to one or more measurement points at the main component, to the electrical terminals and / or even to one or more measurement terminals provided by the main component.

[0049] For example, the measuring terminal can make electrical contact with an integrated structure that allows temperature measurement, such as a corresponding integrated resistor structure arranged near the pn junction of the main component, near the center of the semiconductor body of the main component, or near the center of the fuse body.

[0050] In this respect, it should be noted that junction temperature is generally particularly important for characterizing the operating state of semiconductor devices. For fuses, the temperature at the terminals and / or the core temperature of the fuse body may be particularly important for characterizing the operating state.

[0051] The term “shell” as used in this application shall encompass the term “outer shell”.

[0052] In embodiments where the reference power semiconductor device is used as a power component, the main component is typically at least substantially shaped as a cylinder, more typically at least substantially shaped as a generally flat straight cylinder, particularly shaped as a (semiconductor) wafer disk. Similarly, one or more electrical terminals may be at least substantially shaped as corresponding cylinders, and / or the component housing may be at least substantially shaped as a hollow cylinder, typically a corresponding straight hollow cylinder.

[0053] In addition, the diameter of the main component and / or the semiconductor body of the main component is at least about 2 inches, typically in the range of about 2 inches to about 6 inches.

[0054] The semiconductor body typically includes a rectifier junction.

[0055] In a cross-section of a semiconductor body that is at least substantially cylindrical, particularly in a cross-section parallel to one or more main surfaces formed by a top substrate and a bottom substrate, the rectifier junction may extend at least substantially through the semiconductor body and / or may be oriented at least substantially parallel to one or more main surfaces.

[0056] In addition, the rectifier junction can be functionally connected between two electrical terminals and / or configured to carry current between the two electrical terminals.

[0057] Specifically, the rectifier junction can be a PN junction formed between the p-type semiconductor region and the n-type semiconductor region of the semiconductor body.

[0058] Typically, each of the p-type and n-type semiconductor regions is in ohmic contact with one of the two electrical terminals and / or is at least substantially covered by one of the two electrical terminals.

[0059] The sensor and transmitter unit can be configured to measure the temperature of the rectifier junction and / or the core temperature of the semiconductor body.

[0060] For this purpose, the power component may have an integrated resistor structure that contacts the sensor and transmitter unit (ohm) and is arranged at or near the rectifier junction, and / or an integrated resistor structure that contacts the sensor and transmitter unit (ohm) and is arranged at or near the center of the semiconductor body, particularly relative to the cylindrical axis of the at least substantially cylindrical semiconductor body and / or at or near the cylindrical axis of the at least substantially cylindrical semiconductor body.

[0061] In addition, power semiconductor devices can be press-packaged semiconductor devices or press-pack semiconductor devices.

[0062] In embodiments where the reference power fuse is used as a power component, the component housing typically provides the fuse body.

[0063] The main components of a power fuse can also be at least substantially cylindrical (right), but are not typically cylindrical. In particular, a power fuse can have a square body design. The electrical terminals of a power fuse can be flush-end designed.

[0064] The resistive structure in contact with the sensor and transmitter unit (ohm) can be arranged at or near the center of the fuse body, particularly at the center of the longitudinal axis and / or cylindrical axis of the fuse body and / or the main assembly, and / or at or near the main assembly, particularly at or near the side surface of the main assembly.

[0065] According to one embodiment, the power module includes at least two power components as explained herein, such as multiple corresponding components.

[0066] Typically, power components are connected to each other in pairs.

[0067] More specifically, a power module may include at least two or more corresponding power semiconductor devices connected in parallel or series in pairs, such as two or more corresponding power thyristors connected in parallel. A power module may even include multiple corresponding power semiconductor devices connected in parallel and / or series in pairs, such as up to 24 or more power thyristors connected in parallel in pairs.

[0068] Alternatively or additionally, a power module may include one or more pairs of power semiconductor devices and power fuses connected in series.

[0069] Alternatively or additionally, the power module may include a first submodule having a first power semiconductor device and a first power fuse connected in series, and a second submodule connected to the first submodule and having a second power semiconductor device and a second power fuse connected in series.

[0070] Power modules can form part of or be part of power electronic devices, such as power converters, especially power rectifiers or power inverters.

[0071] According to one embodiment, a system includes one or more power components as explained herein, or includes one or more power modules as explained herein, and includes a receiving unit and an evaluation unit. The receiving unit is configured to receive electromagnetic signals from the power components and decode measurements of the physical quantities. The evaluation unit is connectable to the receiving unit and is configured to use the decoded measurements of the physical quantities to analyze the operating state of the main components of the power components and / or the operating state of the power modules.

[0072] The receiving unit can be implemented as a corresponding reader, such as an active RFID reader.

[0073] In addition, the receiving unit may include a network interface for connecting the receiving unit to a data network, particularly a network interface configured to transmit and receive digital signals and / or digital data between the receiving unit and the data network, especially a global data network, such as a corresponding wireless interface (e.g., a Wi-Fi interface).

[0074] Data networks can be Ethernet networks using TCP / IP, such as LANs, WANs, or the Internet. Data networks can include distributed storage units, such as the cloud. Depending on the application, the cloud can be a public cloud, a private cloud, a hybrid cloud, or a community cloud.

[0075] The receiving unit is typically operatively connected to a network interface to execute commands received from the data network. Commands may include control commands for controlling the receiving unit and one or more power components. Commands may include status requests. In response to a status request, or in the absence of a prior status request, the receiving unit may be adapted to send status information to the network interface, and the network interface may then be adapted to transmit the status information over the network. Commands may include update commands, which include update data. In this case, the receiving unit may be adapted to initiate an update in response to the update command and using the update data.

[0076] Similarly, the evaluation unit may also include a corresponding network interface for connecting the evaluation unit to the data network.

[0077] Therefore, the evaluation unit can be located far from the receiving unit.

[0078] The evaluation unit is typically configured to estimate the aging status of one or more power components using one or more decoded measurements, and / or determine warning messages, maintenance recommendations, and / or control parameters for one or more power components.

[0079] Specifically, the evaluation unit can be configured to determine at least one of the current intensity of the power supply current and the current distribution between at least two power components using one or more decoded measurements. These values ​​can be used, for example, to determine one or more control parameters of the power components, particularly those relating to current intensity and / or switching characteristics and / or maintenance recommendations.

[0080] The evaluation unit can even be configured to use one or more control parameters to influence the current distribution.

[0081] In addition, the evaluation unit can be configured to decode measurements of different physical quantities of the power component, and / or decode one or more measurements of the power component's temperature, voltage, and / or voltage drop.

[0082] Furthermore, the evaluation unit can be configured to determine the current temperature-dependent properties of the power components, particularly the resistance, resistivity, conductance, and / or conductivity of the power components.

[0083] According to an embodiment of a method, the method includes using a sensor and transmitter unit of a power component configured to carry a power supply current, particularly a sensor and transmitter unit of a power component as explained herein, to measure the value of a physical quantity characterizing the operating state of a main component of the power component; and using an antenna of the sensor and transmitter unit to transmit an electromagnetic signal in which the measured value of the physical quantity is encoded.

[0084] This method typically also includes receiving electromagnetic signals and decoding encoded values.

[0085] In addition, the method may also include using decoded values ​​to determine the operating status, changing the control parameters of the power components, estimating the aging status of the power components, and / or determining warning messages and / or maintenance recommendations for the power components.

[0086] According to an embodiment of a method for manufacturing a power component, particularly a power component as explained herein, the method includes providing a main component configured to carry a power supply current, and a sensor and transmitter unit configured to measure values ​​of physical quantities characterizing the operating state of the main component and to transmit electromagnetic signals, the measured values ​​of the physical quantities being encoded in the electromagnetic signals; and at least partially enclosing the main component with a dielectric, and attaching the sensor and transmitter unit to, at, and / or on the dielectric such that the antennas of the sensor and transmitter unit are spaced apart from the main component.

[0087] For example, the main component can be encapsulated with a dielectric material to form a module housing. Subsequently, the sensor and transmitter units can be attached to the module housing and the dielectric material, respectively, for example, glued to the outside of the module housing. The sensor and transmitter units can then be connected to terminals and / or measurement points at the main component.

[0088] Other embodiments include (non-volatile) computer-readable storage media or devices, and one or more computer programs recorded on one or more computer-readable storage media or computer storage devices. One or more computer programs may be configured to perform a particular operation or process by including instructions that, when executed by one or more processors of a system, particularly a system as explained herein, cause the system to perform the operation or process.

[0089] According to an embodiment of a method, particularly a monitoring method, the method includes providing a power module as explained herein, receiving one or more corresponding measurements of a physical quantity from at least one of the sensor and transmitter units of at least two power components of the power module, and further processing the received measurements(s).

[0090] Further processing typically includes at least one of the following processes: determining temperature, determining temperature distribution, monitoring temperature, monitoring temperature distribution, determining current, determining current distribution, monitoring current, monitoring current distribution, and detecting imbalances in temperature distribution and / or current distribution, such as potentially harmful imbalances when the duration exceeds a predefined time.

[0091] Determining the current and / or current distribution may include taking into account the given resistance between the electrical terminals of the power module's power fuse, and in particular the corresponding cold resistance of the power fuse.

[0092] The method may further include estimating the aging of the power module, issuing a warning (message), scheduling maintenance or repair of the power module, determining at least one updated control parameter for operating the power module, and / or controlling the power module using the at least one updated control parameter after detecting (potentially harmful) (one or more) imbalances, (one or more) temperatures and / or currents.

[0093] After reading the following detailed description and reviewing the accompanying drawings, those skilled in the art will be able to recognize the additional features and advantages. Attached Figure Description

[0094] The components in the figures are not necessarily drawn to scale, but rather to emphasize the principles of the invention. Furthermore, in the figures, the same reference numerals denote corresponding parts. In the figures:

[0095] Figure 1AA cross-section of a power component according to one embodiment is shown;

[0096] Figure 1B A view of a power component according to one embodiment is shown;

[0097] Figure 1C A view of a power component according to one embodiment is shown;

[0098] Figure 1D A cross-section of a power component according to one embodiment is shown;

[0099] Figure 1E A cross-section of a power component according to one embodiment is shown;

[0100] Figure 2A This is a schematic diagram of a power module according to one embodiment;

[0101] Figure 2B This is a schematic diagram of a power module according to one embodiment;

[0102] Figure 2C This is a block diagram of a system according to one embodiment;

[0103] Figure 2D This is a flowchart of a method for monitoring power components according to an embodiment;

[0104] Figure 2E This is a flowchart of a method for manufacturing a power component according to an embodiment;

[0105] Figure 3A This is a schematic diagram of a power module according to one embodiment;

[0106] Figure 3B This is a schematic diagram of a power module according to one embodiment; and

[0107] Figure 3C This is a flowchart of a method according to one embodiment. Detailed Implementation

[0108] Reference will now be made in detail to various embodiments, with one or more examples illustrated in each figure. Each example is provided by way of explanation and is not intended to be limiting. For example, features shown or described as part of an embodiment may be used in or in combination with any other embodiment to produce yet another embodiment. This disclosure is intended to include such modifications and variations.

[0109] In the following description of the accompanying drawings, the same reference numerals refer to the same or similar components. Generally, only differences with respect to individual embodiments are described. Unless otherwise stated, the description of parts or aspects of one embodiment also applies to corresponding parts or aspects of another embodiment.

[0110] Figure 1A A schematic cross-section of a power assembly 100 is shown. In an exemplary embodiment, the power assembly 100 is a power fuse having a conductive element 110 as a main functional component, which is laterally surrounded by a ceramic fuse body forming an assembly housing 120. The fuse body 120 may, for example, be formed as a hollow cylinder. The conductive element is in electrical contact with two electrical terminals 111, 112 and can carry current between the terminals 111, 112 and disconnect the current above a predetermined threshold current. A sensor and transmitter unit 130 has an antenna 133 for transmitting electromagnetic signals and is arranged on and attached to the outer surface of the fuse body 120. As shown by wiring 135, the sensor and transmitter unit 130 may be connected to a measuring tip arranged next to or even on the surface of the conductive element 110. Note that any wiring in the figure may correspond to a single wire, a pair of wires, or even more than two wires.

[0111] Therefore, the sensor and transmitter unit 130 can measure the core temperature value of the conductive element 110 during device operation and transmit the core temperature value encoded as an electromagnetic signal to a reader (not shown) via antenna 133. For clarity, Figure 1A Other optional details of the power fuse 100, such as filler, are also not shown.

[0112] This allows for contactless transmission of measured temperature values ​​and remote further processing to at least characterize the operating status of the power component 100.

[0113] As shown by dashed line 135', the sensor and transmitter unit 130 can optionally or additionally measure the temperature value of terminal 112 (or even both terminals) and transmit the terminal temperature value in coded form along with an electromagnetic signal.

[0114] It can measure the corresponding temperature values ​​for a temperature range of approximately -40°C to approximately 125°C (for measuring core temperature) or approximately -40°C to approximately +85°C (for measuring terminal temperature) and / or with an accuracy of at least 0.5°C.

[0115] Figure 1B A schematic diagram of a portion of power component 100' is shown. Power component 100' is similar to the one described above. Figure 1AThe power component 100 is explained, and could also be a power fuse. However, the sensor and transmitter unit 130' of the power component 100' is implemented as an RFID temperature sensor. The RFID temperature sensor 130' has a sensor unit 131 with a suitable measurement circuit system and a transmitter unit 132 with a flat coil antenna 133.

[0116] like Figure 1C As shown, Figure 1C A schematic diagram of a portion of the power assembly 100” is shown. The sensor unit 131 and transmitter unit 132 of the RFID sensor 130” may be spaced apart from each other, but are functionally coupled to each other, typically via a wired connection.

[0117] Figure 1D A schematic cross-section of the power component 200 is shown. The power component 200 is generally similar to the one described above. Figures 1A to 1C The explanation refers to power components 100 to 100", and these are typically power fuses, particularly corresponding semiconductor fuses. However, in Figure 1D In an exemplary embodiment, the sensor and transmitter unit 230 attached to the fuse body (assembly housing) 220 is connected to two electrical terminals 211, 212 via corresponding wires 235.

[0118] The sensor and transmitter unit 230 is typically configured to measure the voltage at terminals 211, 212. Additionally, the sensor and transmitter unit 230 can be configured to determine the voltage drop between the two terminals 211, 212.

[0119] As described above, in an exemplary embodiment, the sensor and transmitter unit 230 can be implemented as a Bluetooth sensor or an RFID sensor, for example, as an RFID voltage measurement sensor, particularly a corresponding battery-free RFID tag.

[0120] More specifically, the sensor and transmitter unit 230 can be configured to measure the AC voltage drop across the semiconductor fuse 200 and its main component (conductive element) 211, even under high power conditions / in high power applications, particularly in high power rectifier applications (see [link to documentation]). Figure 2A , Figure 2B )middle.

[0121] Voltage measurements can be used, for example, to monitor current distribution (online) in these applications. Alternatively or additionally, information about the operating status of fuse 200 can be determined from the measured values.

[0122] The sensor and transmitter unit 230 can be configured to measure the AC voltage pulse across the fuse 200 and calculate the corresponding RMS value that can be averaged. In this regard, it should be noted that the measured voltage may not be a sinusoidal waveform; for example, even a pulsed DC voltage may be used and may be distorted.

[0123] Furthermore, the sensor and transmitter unit 230 is typically protected so that no arc is generated when the (AC) fuse 200 blows, and a full voltage drop of, for example, 2kV AC is applied across the fuse 200 and therefore across the sensor and transmitter unit 230. However, this typically depends on the specifications of the power semiconductor device to which the semiconductor fuse 200 is to be connected in series.

[0124] For example, the sensor and transmitter unit 230 may meet one or more, or even all, of the following specifications:

[0125] Rated measuring voltage: 80…250mV;

[0126] Rated frequency: 50 / 60Hz;

[0127] Measurement modes: RMS, average value, optional;

[0128] Measure the update cycle rate: ≤10s;

[0129] Isolation voltage input / output: 5kV;

[0130] Temperature measurement range: -40…≥125℃;

[0131] Type: RFID;

[0132] Frequency range for communication with the reader: UHF; and

[0133] Size: a few square centimeters, usually less than 25cm 2 .

[0134] The sensor and transmitter unit 230 can be positioned similarly to the auxiliary contacts (not shown) on the fuse body 220.

[0135] Furthermore, the circuitry of the sensor and transmitter unit 230 is typically enclosed in a non-conductive housing material. This is because it is usually used under high voltage (HV) conditions, such as in HV electron stacks. Additionally, the sensor and transmitter unit 230 is typically used in environments where there is a lot of metal nearby (stainless steel, aluminum, copper).

[0136] Optionally, the sensor and transmitter unit 230 is also configured for use as described above regarding Figures 1A-1C Explanation of temperature measurement, especially for measuring terminal (connection) temperature.

[0137] Figure 1E A schematic cross-section of a power assembly 300 implemented as a vertical power semiconductor device, and more specifically as a power semiconductor diode, is shown. This is indicated by dashed lines representing the PN junction between the p-type and n-type semiconductor regions of the semiconductor body 310, where each semiconductor region is in ohmic contact with one of the two power terminals 311, 312.

[0138] In an exemplary embodiment, the semiconductor body 310 is laterally enclosed by a dielectric component housing 320, which may be, for example, substantially annular (viewed from above).

[0139] In addition, the sensor and transmitter unit 330 is arranged on the lateral outer side and the lateral outer side of the housing 320.

[0140] As shown in wiring 335, the sensor and transmitter unit 330 is typically functionally connected to the semiconductor body 310 and configured to measure the core temperature of the semiconductor body 310, and more specifically, to measure the temperature at least close to the PN junction of the power diode 300.

[0141] For this purpose, the integrated resistor structure is arranged at or near the rectifier junction and at or near the center of the semiconductor body 310 relative to the central axis of the semiconductor body, which is typically at least substantially perpendicular to the PN junction (cylindrical axis).

[0142] Alternatively or additionally, the sensor and transmitter unit 330 may be configured to measure the voltage at power supply terminals 311, 312 and / or determine the voltage drop between power supply terminals 311, 312. These measurements may, for example, be used to directly measure the current imbalance between power diodes connected in parallel.

[0143] Furthermore, the sensor and transmitter units can be configured to measure the temperature at different points within the semiconductor body. Therefore, the temperature distribution can be determined during device operation. In particular, in embodiments involving power MOSFETs and power IGBTs that typically have multiple corresponding units, the temperature difference between units can provide information about the current distribution between units or even about aging.

[0144] In another embodiment, the sensor and transmitter units may alternatively or additionally be configured to measure the values ​​of one or more other physical quantities characterizing the operating state of the respective devices.

[0145] The sensor and transmitter unit 330 may also be at least partially arranged in the component housing 320. For example, the sensor and transmitter unit 330 may be cast into a casting compound for encapsulating the semiconductor body 310.

[0146] Figure 2AA schematic diagram of a power module 500 formed by two power components 200 and 300 connected in series is shown, i.e., as described above regarding... Figure 1E Explanation of power semiconductor diode 300 and as mentioned above regarding Figure 1D The corresponding semiconductor fuse 200 is explained.

[0147] For clarity, in Figure 2A The corresponding sensors and transmitting units, which can be used to measure the core and terminal temperatures of the non-contact power semiconductor diode 300 and the voltage drop across the fuse 200, are not shown. These values ​​can be used to monitor the power module 500 or even several power modules during operation.

[0148] Several power modules in Figure 2B As shown in the figure, Figure 2B A schematic diagram of an exemplary three-phase power rectifier 600, consisting of six power modules 501-506, is shown. Each power module typically corresponds to, as described above... Figure 2A The power module 500 is explained, and Figure 3A A schematic diagram of an exemplary power rectifier 550 is shown, consisting of N power modules 501-50N (N is a positive integer greater than 3, 7, or even 15), each power module typically corresponding to, as shown in the diagram. Figure 2A The power module 500 is explained. The power modules 501-506 and 501-50N shown can be considered as corresponding sub-modules, each sub-module including and / or consisting of power semiconductor devices and power fuses connected in series.

[0149] Based on temperature and voltage drop measurement of power fuse 200, current flows through six modules 501-506 (in... Figure 2A The corresponding currents I1-I6 for each of the N modules and the currents flowing through the N modules 501-50N (in the middle) Figure 3A The corresponding current I1-I in each of the (in the middle) N They can be determined individually with high accuracy because the voltage drop across each fuse 200 is measured and the resistance of each fuse 200 can be corrected based on the measured temperature of the corresponding fuse.

[0150] In addition, measuring the temperature of the power diode 300 is not necessary for determining the current distribution within the power rectifiers 550 and 600, but it can be used for long-term monitoring of power devices, estimating aging and / or scheduling maintenance or repair.

[0151] In other words, it is sufficient for the power diode 200 to be equipped with the corresponding sensor and transmitter unit.

[0152] In other embodiments, it may be sufficient to simply provide a power semiconductor device with the corresponding sensor and transmitter units.

[0153] This is Figure 3B As shown in the figure, Figure 3B A schematic diagram of an exemplary power electronic device 570 consisting of M power modules 300', which are generally at least substantially identical, is shown, where M is a positive integer greater than 1, 3, 7, or even 15. Each power module 300' may correspond to, as per [reference to...] Figure 1E The power diode 300 is explained. In this embodiment, the power electronic device 570 may be a power rectifier. In embodiments involving power electronic switching devices, each power module 300' may be, for example, a power thyristor.

[0154] Based on temperature measurements, for example, using the sensor and transmitter unit of power module 300', the temperature imbalance of power module 300' can be determined. Based on this, and assuming, for example, that the properties of power modules 300' are at least substantially the same, the current I1-I flowing through the M modules 501-50M can be determined. M The imbalance.

[0155] In some applications, it may even be sufficient to provide a corresponding sensor and transmitter unit for one of the power modules in the power module.

[0156] like Figure 2C As shown above regarding Figures 1A to 2B The monitoring and / or control system 701 for one or more power components 100-300 and one or more power modules 500-600 typically has a receiving unit 710 and an evaluation unit 720. The receiving unit 710 is configured to receive electromagnetic signals from one or more power components 100-300 and decode one or more measured values ​​of physical quantities T, V, ΔV. The evaluation unit 720 is connected to the receiving unit 710 and is configured to determine or even analyze one or more corresponding operating states based on the decoded measured values ​​of physical quantities T, V, ΔV.

[0157] The receiving unit 710 and the evaluation unit 720 may be formed by a single device, or they may be located far apart from each other and / or connected to each other via a data network.

[0158] Depending on the determined / analyzed operating state of one or more power modules, the evaluation unit 720 can, for example, issue a warning message and / or determine the control parameters of (one or more) power components, and operate (one or more) power modules using the determined control parameters. The latter in... Figure 2C The dashed arrow indicates this.

[0159] The system 700, consisting of a monitoring and / or control system 701 and one or more power components 100-300 and one or more power modules 500-600, allows for the control and long-term monitoring of one or more power components.

[0160] System 700 can execute Figure 2D Method 1000 is shown in the flowchart.

[0161] In the first block 1100, the sensor and transmitter units of the power component, particularly the sensor and transmitter units of the power component as explained herein, are used to measure the values ​​of physical quantities characterizing the operating state of the power component.

[0162] Subsequently, in box 1200, an electromagnetic signal encoding the measured value of a physical quantity is transmitted via the antenna of the sensor and transmitter unit.

[0163] Typically, in box 1300, electromagnetic signals are received and the encoded values ​​are decoded.

[0164] Boxes 1100 to 1300 can be executed several times, for example at regular intervals, and / or, for several power components, typically in parallel.

[0165] One or more coded values ​​are typically used to determine and / or characterize operating status, determine warning messages for one or more power components, maintenance recommendations, and / or control parameters.

[0166] Figure 2E A flowchart of a method 2000 for manufacturing power components, particularly power components as explained herein, is shown.

[0167] In box 2100, a main component configured to carry current, as well as sensor and transmitter units, are provided.

[0168] In block 2200, the main component is provided with a dielectric component housing and a sensor and a transmitting unit. This is done so that the antennas of the sensor and transmitting unit are attached to the component housing and spaced apart from the main component, and so that the sensor and transmitting unit can measure the values ​​of physical quantities characterizing the operating state of the main component and transmit electromagnetic signals via the antennas in which the measured values ​​of the physical quantities are encoded.

[0169] Figure 3C A flowchart of method 3000 is shown.

[0170] In the first block 3100, a power module as explained herein may be provided.

[0171] In box 3200, corresponding measurements of one or more physical quantities are received from one, typically two, or even all, of the sensor and transmitter units of the power module's power components.

[0172] The measured value can specifically refer to the temperature of the corresponding main component, the voltage of at least one of the two corresponding electrical terminals, or the corresponding voltage drop across the main component and the two terminals.

[0173] Subsequently, the received measurements (one or more) are further processed in box 3300.

[0174] like Figure 3C As shown by the dashed arrows in the diagram, boxes 3200 and 3300 can, for example, repeat periodically (several times).

[0175] Further processing may include one or more of the following steps:

[0176] Determine the temperature distribution of the main components.

[0177] Monitor temperature distribution.

[0178] Determine the current flowing through one or more main components.

[0179] Determine the current distribution among the main components.

[0180] Monitoring current and / or current distribution, and

[0181] Detect imbalances in temperature and / or current distribution.

[0182] For example, the power module provided could be as described above. Figure 3B The power module 570 is explained, or as mentioned above. Figure 2B , Figure 3A Explanation of power modules 550 and 600. In embodiments of power modules 550 and 600, the current and / or current distribution can be determined taking into account a given resistance between the electrical terminals of the power fuse, and in particular the corresponding cold resistance of the power fuse.

[0183] Alternatively or additionally, further processing may include one or more of the following steps:

[0184] Estimate the aging of the power module or one or more of its power components.

[0185] Maintenance or repair of the power scheduling module.

[0186] Determine at least one updated control parameter used to operate the power module, and

[0187] Use at least one updated control parameter to control the power module.

[0188] For example, the switching characteristics and / or current intensity of one or more controllable power components in a power module and power electronic device can be modified separately to better balance current and / or temperature distribution. This can increase lifespan.

[0189] Aging can be estimated based on the monitored peak load and / or combined load of the power module and its power components, respectively.

[0190] The monitored load can refer to thermal load, current load, or a combination thereof.

[0191] Although various exemplary embodiments of the invention have been disclosed, it will be apparent to those skilled in the art that various changes and modifications can be made to achieve some of the advantages of the invention without departing from the spirit and scope thereof. It will also be apparent to those skilled in the art that other components performing the same function can be appropriately substituted. It should be noted that features explained with reference to specific drawings may be combined with features in other drawings, even if not explicitly stated therein.

[0192] For ease of description, spatial relative terms such as "below," "below," "lower part," "above," and "upper part" are used to explain the positioning of one element relative to a second element. These terms are intended to cover different orientations of the device as well as orientations different from those depicted in the figures. Furthermore, terms such as "first" and "second" are also used to describe various elements, regions, parts, etc., and are not intended to be limiting. Similar terms refer to similar elements throughout the description.

[0193] As used herein, the terms “having,” “containing,” “including,” “comprising,” etc., are open-ended terms indicating the presence of the stated element or feature, but not excluding additional elements or features. The articles “a,” “an,” and “the” are intended to include both plural and singular forms unless the context clearly indicates otherwise.

[0194] In light of the above changes and scope of application, it should be understood that the present invention is not limited to the above description or the accompanying drawings. Rather, the present invention is limited only to the following claims and their legal equivalents.

[0195] Figure Labels

[0196] 100-300: Power Components

[0197] 110, 210, 310: Main components of the power module

[0198] 111, 112, 211, 212, 311, 312: Electrical terminals

[0199] 120, 220, 320: Housings of power components

[0200] 130, 230, 330: Sensor and transmitter units

[0201] 133: Antenna

[0202] 500-600: Power Module

[0203] 700: System

[0204] 1000-3300: Methods and Procedures

Claims

1. A power semiconductor device, comprising: - two electrical terminals; - a component housing; - a main component at least partially enclosed by the component housing, connected with the two terminals, and configured to carry a power current flowing between the two electrical terminals; and - a sensor and transmitter unit configured to measure a plurality of values of a respective physical quantity characterizing an operating state of the main component, and to transmit an electromagnetic signal, the plurality of measured values of the physical quantity being encoded in the electromagnetic signal together with a respective measurement time, the sensor and transmitter unit comprising an antenna for transmitting the electromagnetic signal, the antenna being spaced apart from the main component and arranged in, on and / or at the component housing; wherein the plurality of measured values of the physical quantity comprises a temperature of the main component and a voltage of at least one of the two electrical terminals.

2. The power semiconductor device according to claim 1, wherein a rated current of the main component is at least about 10 A, wherein the power semiconductor device is a high-voltage component, wherein a rated voltage of the main component is at least about 600 V, wherein a rated power of the main component is at least about 2 kW, and / or wherein the power semiconductor device is configured to control and / or interrupt the power current.

3. The power semiconductor device according to claim 1 or 2, wherein the power semiconductor device is a vertical power semiconductor device, and / or comprises a power semiconductor diode and / or a power semiconductor switch, and / or wherein the power semiconductor device is one of a power semiconductor diode, a power semiconductor switch.

4. The power semiconductor device according to claim 3, wherein the power semiconductor switch is a power thyristor, a power MOSFET or a power IGBT.

5. The power semiconductor device according to claim 1 or 2, wherein the sensor and transmitter unit comprises a low-power transponder, wherein the sensor and transmitter unit is configured to store at least temporarily several measurement values of the physical quantity, wherein the sensor and transmitter unit is configured to encode the several measurement values of the physical quantity into the electromagnetic signal, and / or wherein the sensor and transmitter unit is configured to encode an identifier for the power semiconductor device into the electromagnetic signal.

6. The power semiconductor device according to claim 5, wherein the low-power transponder is a Bluetooth transponder or an RFID transponder.

7. The power semiconductor device according to claim 6, wherein the RFID transponder is an active RFID tag or a passive RFID tag. ​ 8. The power semiconductor device according to claim 1 or 2, wherein the sensor and transmitter unit comprises a sensor unit and a transmitter unit, the transmitter unit comprising the antenna, wherein the transmitter unit is spaced apart from the sensor unit, wherein the sensor unit is configured to convert an analog input signal representing the physical quantity into a digital value, to store the digital value, to process the digital value and / or to transmit the digital value and / or the processed digital value to the transmitter unit, wherein the sensor and transmitter unit is provided by one or more RFID sensors, and / or wherein the sensor and transmitter unit has a power rating of at most 5 W.

9. The power semiconductor device according to claim 1 or 2, wherein the sensor and transmitter unit comprises two sensors, each of the two sensors being configured to measure a respective physical quantity characterizing the operating state of the main assembly, wherein the sensor and transmitter unit is configured to measure different physical quantities, each of the different physical quantities characterizing the operating state of the main assembly, and / or wherein the sensor and transmitter unit is configured to measure a voltage drop across the main assembly and / or the two terminals.

10. The power semiconductor device according to claim 1 or 2, wherein the main assembly is shaped at least as a cylinder, wherein at least one of the two electrical terminals is shaped at least as a cylinder, wherein the assembly housing is shaped at least as a hollow cylinder, wherein the main assembly comprises a semiconductor body comprising a rectifying junction, wherein the main assembly and / or the semiconductor body has a diameter of at least 2 inches, and / or wherein the power semiconductor device comprises a press-pack design or a press design.

11. The power semiconductor device according to claim 10, wherein the main assembly and / or the semiconductor body has a diameter in a range of 2 inches to 6 inches.

12. The power semiconductor device according to claim 10, wherein the sensor and transmitter unit is configured to measure a temperature of the rectifying junction and / or a core temperature of the semiconductor body.

13. The power semiconductor device according to claim 12, wherein the rectifying junction extends in a cross section at least through the semiconductor body, wherein the rectifying junction is functionally connected between the two electrical terminals, wherein the rectifying junction is configured to carry a power current between the two electrical terminals, and / or wherein the rectifying junction is a PN junction formed between a p-type semiconductor region and an n-type semiconductor region of the semiconductor body.

14. The power semiconductor device according to claim 13, wherein each of the p-type semiconductor region and the n-type semiconductor region is in ohmic contact with and / or covered by at least one of the two electrical terminals.

15. The power semiconductor device according to claim 10, further comprising an integrated resistance structure arranged at or in the vicinity of the rectifying junction, and / or an integrated resistance structure arranged at or in the vicinity of a center of the semiconductor body.

16. The power semiconductor device according to claim 1 or 2, wherein the component housing comprises a dielectric and / or a ceramic, wherein the component housing encloses the main component, wherein the antenna is a flat antenna and / or a coil antenna, and / or wherein the antenna is arranged outside the component housing.

17. A power module comprising at least two power components, the at least two power components being at least pairwise connected to each other, at least one of the at least two power components being a power semiconductor device according to claim 1, each of the at least two power components comprising: - two respective electrical terminals; - a respective component housing; - a respective main component, at least partially enclosed by the component housing, connected with the two terminals, and configured to carry a power current flowing between the two electrical terminals; and - a respective sensor and transmitter unit configured to measure a value of a physical quantity characterizing an operating state of the respective main component, and to emit an electromagnetic signal, the measured value of the physical quantity being encoded in the electromagnetic signal, the sensor and transmitter unit comprising an antenna for emitting the electromagnetic signal, the antenna being spaced apart from the main component and arranged in, on and / or at the respective component housing.

18. The power module according to claim 17, wherein the power module is part of or forms a power converter, and / or comprises at least one of: - two power semiconductor devices connected in parallel; - the power semiconductor device and a power fuse connected in series; - a first sub-module comprising a first power semiconductor device and a first power fuse connected in series; and - a second sub-module connected with the first sub-module and comprising a second power semiconductor device and a second power fuse connected in series.

19. The power module according to claim 18, wherein the power converter is a power rectifier.

20. The power module according to claim 18, wherein the component housing of the power fuse provides a fuse body, wherein the main component and the power fuse are at least shaped as a cylinder, wherein the power fuse comprises a square body design, and / or wherein the electrical terminals of the power fuse comprise a flush end design.

21. The power module according to claim 20, wherein the power fuse comprises a resistance structure arranged at or close to a center of the fuse body, and / or close to the main component.

22. The power module according to claim 21, wherein the center of the fuse body is a center with respect to a longitudinal axis and / or a cylinder axis of the fuse body and / or the main component.

23. The power module according to claim 21, wherein the resistance structure is arranged at or close to a lateral surface of the main component.

24. An electronic system comprising: - at least one of the power component according to claim 1 or 2 and the power module according to claim 17, the power component being a power semiconductor device; - a receiving unit configured to receive the electromagnetic signal from at least one of the power component and / or at least two power components of the power module and to decode the measured values of the physical quantities; and - an evaluation unit connectable with the receiving unit and configured to analyze the operating state of the main component of the respective power component and / or an operating state of the power module using the decoded measured values of the physical quantities.

25. The electronic system according to claim 24, wherein the evaluation unit is configured to estimate an aging state of the power component and / or to determine at least one of a control parameter and a warning message for the power component using the decoded measured values, wherein the evaluation unit comprises a network interface for connecting the evaluation unit to a data network, and / or wherein the receiving unit comprises a network interface for connecting the receiving unit to the data network.

26. The electronic system according to claim 25, wherein the network interface is configured to transceive digital signals and / or digital data between the evaluation unit and the data network.

27. The electronic system according to claim 24, wherein the evaluation unit is configured to at least one of: - determine at least one of a current strength of the power current and a current distribution between two of the power components using the decoded measured values; - determine one or more control parameters for at least one of the power components, in particular a control parameter related to the current strength; - influence the current distribution; - decode measured values of different physical quantities of the power components; - decode measured values of a temperature, a voltage and / or a voltage drop of the power components; and - determine a current temperature-dependent property of the power components.

28. The electronic system according to claim 27, wherein the current temperature-dependent property of the power components is a resistance, a resistivity, a conductance and / or a conductivity of the power components.

29. A method for a power component, comprising: - measuring a value of a physical quantity characterizing an operating state of a main component of the power component using a sensor and a transmitter unit of the power component, the main component being configured to carry a power current; and - transmitting an electromagnetic signal using an antenna of the sensor and transmitter unit, the measured value of the physical quantity being encoded in the electromagnetic signal; wherein the power component is a power semiconductor device according to claim 1 or 2 and / or provided by a power module according to claim 17.

30. A method for manufacturing a power semiconductor device according to claim 1 or 2, the method comprising: - providing a main component configured to carry a power current, and a sensor and transmitter unit configured to measure a value of a physical quantity characterizing an operating state of the main component and to transmit an electromagnetic signal, the measured value of the physical quantity being encoded in the electromagnetic signal; - at least partially wrapping said main assembly with a dielectric, and attaching said sensor and transmitter unit in, at, and / or on said dielectric such that an antenna of said sensor and transmitter unit is spaced apart from said main assembly.

31. A method for a power module, comprising: - providing a power module according to any one of claims 17 to 21 ; - receiving respective measurement values of physical quantities from at least one of said sensor and transmitter units of said at least two power assemblies; and - further processing said received measurement values.

32. The method according to claim 31, wherein further processing comprises at least one of: - determining a temperature profile; - monitoring a temperature profile; - determining a current and / or a current profile; - monitoring said current and / or said current profile; - detecting an imbalance of said temperature profile and / or said current profile; - estimating an aging of said power module; - scheduling a maintenance or repair for said power module; - determining at least one updated control parameter for operating said power module; and - controlling said power module using said at least one updated control parameter.

33. The method according to claim 32, wherein said current and / or said current profile is determined taking into account a given resistance between said electrical terminals of a power fuse of said power module.

34. The method according to claim 33, wherein said given resistance is a respective cold resistance of said power fuse.

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