Method for enhancing the output of Au / 4H-SiC Schottky junction based on piezoelectric optoelectronics effect

Abstract

The present invention belongs to the field of photoelectric detection and relates to a method for enhancing the output of an Au / 4H-SiC Schottky junction based on the piezoelectric optoelectronics effect. A pretreated 4H-SiC single crystal is vertically corroded by an electrochemical etching method to obtain a 4H-SiC nanowire array, which is then wrapped by spin coating with a PMMA solution after washing and drying. The top of the nanowire is exposed by an oxygen plasma cleaning technique, and an Au electrode is deposited on the top of the nanowire array to form an Au / 4H-SiC Schottky junction. Finally, a piezoelectric motor is used to apply compressive strain to the top of the nanowire to enhance the photoelectric response of the Au / 4H-SiC Schottky junction. The Au / 4H-SiC Schottky junction in the present invention can produce different responses to different mechanical forces by applying strain, which can significantly change the output performance of the device. The output performance of the device can be optimized and further used for direct interaction between external mechanical stimulation and SiC-based electronic devices.

Description

Technical Field

[0001] The invention belongs to the field of photoelectric detection and relates to a method for enhancing the output of an Au / 4H-SiC Schottky junction based on a piezoelectric optoelectronics effect. Background Art

[0002] Ultraviolet light is a powerful electromagnetic wave found in nature, exerting a strong influence on most organic and inorganic substances. Consequently, it is widely used in a wide range of fields, including military, health, industry, agriculture, and environmental protection. Consequently, UV detection devices and products have attracted significant attention worldwide, generating enormous market demand. For example, arrays of UV detectors can be used for precision missile guidance and early warning. Highly sensitive UV detectors also play a vital role in environmental monitoring and food disinfection. Currently, UV photomultiplier tubes (PMTs) are widely used in most UV detection applications due to their mature technology and excellent UV detection properties. However, their inherent drawbacks—large size, potential for damage, high voltage requirements, and difficulty in operation—have become increasingly prominent in the current era of miniaturization, integration, and portability. This has prompted the search for new UV detectors that meet the requirements of high sensitivity, high signal-to-noise ratio, high speed, high spectral selectivity, and high stability, while also being compact, easy to integrate, simple to operate, and stable in performance and resistant to interference.

[0003] With the rapid development of semiconductor technology, semiconductor ultraviolet photodetectors have emerged. 4H-SiC is one of the important materials of the third generation of wide bandgap semiconductors. The 4H-SiC ultraviolet photodetector made of it not only has all the advantages mentioned above, but also has more excellent features. (1) As a wide bandgap semiconductor, 4H-SiC has a bandgap width of about 3.26eV at room temperature, which means that the photodetector is "visible light blind" and has an extremely high ultraviolet / visible light suppression ratio. (2) Near the detection peak wavelength (280nm), the penetration depth of 4H-SiC is about 1μm, which ensures sufficient absorption of the light signal and makes the photodetector have a high quantum efficiency. (3) The intrinsic carrier concentration of 4H-SiC is extremely low, which ensures that the 4H-SiC ultraviolet photodetector has an extremely low leakage current. (4) The excellent crystal structure of 4H-SiC enables the 4H-SiC ultraviolet photodetector to work normally under extreme conditions such as high radiation and high temperature. (5) 4H-SiC has its own substrate and only needs to be doped to obtain p-type and n-type, which greatly reduces the lattice mismatch caused by heteroepitaxial growth.

[0004] However, most current 4H-SiC-based UV photodetectors consist of a Schottky junction formed by metal and 4H-SiC material. Their main operating band is in the 260-280nm range, and their response to other near-ultraviolet bands is weak. The transmittance and reflection of the metal electrode also affect the photoresponse performance of the Schottky junction (Wang Liangjun. Development of Au / 4H-SiC semi-transparent Schottky UV photodiode; Wang Liangjun. 2006; Cai Xiaolong. Preparation and characterization of a new 4H-SiC UV avalanche photodetector [J]. 2018.). Summary of the Invention

[0005] To address the technical issues in existing technologies where the Schottky junction formed by metal and 4H-SiC material exhibits weak response in near-ultraviolet bands other than the 260-280nm band, and where the reflection of incident light by the metal electrode further weakens the Schottky junction's photoelectric response, this paper proposes a method for enhancing the output of an Au / 4H-SiC Schottky junction based on the piezoelectric optoelectronic effect. This method utilizes the piezoelectric optoelectronic effect of a 4H-SiC nanowire array to enhance the output of the Au / 4H-SiC Schottky junction, thereby optimizing the Schottky junction's photoelectric response in the near-ultraviolet band.

[0006] In order to achieve the above object, the technical solution of the present invention is achieved as follows:

[0007] A method for enhancing the output of an Au / 4H-SiC Schottky junction based on the piezoelectric optoelectronics effect, wherein the Schottky junction is composed of a 4H-SiC nanowire array and a gold electrode.

[0008] Furthermore, the 4H-SiC nanowire array is formed by vertically etching a 4H-SiC single crystal wafer through an electrochemical etching method.

[0009] Furthermore, the 4H-SiC single crystal wafer used is N-type doped and has good piezoelectricity.

[0010] Furthermore, the preparation method of the Au / 4H-SiC nanowire array Schottky junction is as follows:

[0011] (1) Place the 4H-SiC single crystal in acetone, deionized water and ethanol for ultrasonic cleaning in sequence, and dry it for later use;

[0012] (2) Soaking the cleaned 4H-SiC single crystal obtained in step (1) in a mixed solution of ethanol and hydrofluoric acid (40 wt%) to remove surface oxides;

[0013] (3) The rough surface of the 4H-SiC single crystal obtained in step (2) is brought into contact with the electrode sheet of the Pt electrode, and the smooth surface is opposite to the graphite electrode. The Pt electrode serves as the anode and the graphite electrode serves as the cathode. The crystals are immersed in a pre-prepared supersaturated aqueous solution of ammonium bifluoride for pre-corrosion for 80-100 s. The pulse power supply used is SOYI-3601M produced by Shanghai Suoyi Electronics Co., Ltd. The corrosion parameters are constant current pulse, current of 100-130 mA, frequency of 1250 Hz, and duty cycle of 50%. The corrosion solution is replaced with a mixed solution of hydrofluoric acid (40 wt%), ethanol (AR), and hydrogen peroxide (30 wt%) in a volume ratio of 3:6:1. The corrosion parameters are constant current pulse, current of 100-130 mA, frequency of 1250 Hz, and duty cycle of 50%, until the cap layer falls off and the 4H-SiC nanowire array is exposed.

[0014] (4) The 4H-SiC nanowire array obtained after the corrosion in step (3) is sequentially placed in deionized water and ethanol for cleaning to remove the corrosive liquid on the surface, and then dried for use;

[0015] (5) Wrapping the 4H-SiC nanowire array obtained in step (4) by spin coating PMMA solution, exposing the top of the nanowire using oxygen plasma cleaning technology, and depositing Au electrodes on the top of the nanowire array to form Au / 4H-SiC Schottky junctions;

[0016] (6) The photoelectric response of the Au / 4H-SiC Schottky junction is enhanced by applying compressive strain at the top of the nanowire using a piezoelectric motor.

[0017] Furthermore, in step (1), the ultrasonic cleaning time in acetone, deionized water and ethanol is 20-30 minutes.

[0018] Preferably, the ultrasonic cleaning time in acetone, deionized water and ethanol in step (1) is 20 minutes.

[0019] Furthermore, in step (2), the mass fraction of hydrofluoric acid is 40%, and the volume ratio of ethanol to hydrofluoric acid is 1:1.

[0020] Furthermore, in step (5), the spin coating is performed using a glue spreader, the rotation speed of the glue spreader is 3800-4800 r / s, and the glue spread time is 30-40s.

[0021] Preferably, the spin coating in step (5) is performed by a glue spreader, the rotation speed of the glue spreader is 4800 r / s, and the glue spread time is 30 s.

[0022] Furthermore, the voltage of the oxygen plasma cleaning technology in step (5) is 600-700V, and the time is 3-5 minutes.

[0023] Preferably, the voltage of the oxygen plasma cleaning technology in step (5) is 700 V and the time is 3 minutes.

[0024] Furthermore, the electrode deposition method in step (5) is as follows: a pair of gold electrodes are deposited on the top of the nanowire array by a small ion sputtering apparatus to form an Au / 4H-SiC Schottky junction, and then the electrodes are immersed in acetone for 10-12 hours to remove the PMMA coating.

[0025] Preferably, the electrode deposition method in step (5) is: depositing a pair of gold electrodes on the top of the nanowire array by a small ion sputtering device to form an Au / 4H-SiC Schottky junction, and then soaking it in acetone for 12 hours to remove the PMMA coating.

[0026] The present invention has the following beneficial effects:

[0027] 1. The Au / 4H-SiC Schottky junction based on the nanowire array structure in the present invention can be used to optimize the output performance of the device by applying strain on the surface of the Schottky junction, and can also be further used for direct interaction between external mechanical stimulation and SiC-based electronic devices.

[0028] 2. The Schottky junction structure in the present invention is a nanowire array obtained by electrochemical corrosion, which is relatively more conducive to the application of strain.

[0029] 3. The Au / 4H-SiC Schottky junction in this invention responds differently to varying mechanical forces through the application of strain, significantly altering the device's output performance. At maximum compressive strain, the Schottky junction's output performance improved by approximately 160% in the dark state and by approximately 25% when exposed to light. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0031] Figure 1 Scanning electron microscope images A and B of the 4H-SiC nanowire array prepared in Example 1 of the present invention.

[0032] Figure 2 Schematic diagram of the structure and test of the Au / 4H-SiC Schottky junction prepared in Example 1 of the present invention. 1, 2, 3, 4, and 5 represent the test instrument (Keithley 4200), the stress application position, the light source incident position, the gold electrode, and the 4H-SiC nanowire array, respectively.

[0033] Figure 3 Graph showing test data of the Au / 4H-SiC Schottky junction prepared in Example 1 of the present invention under dark (left) and light-added (right) conditions.

[0034] Figure 4 Schematic diagram of stress regulation in Example 1 of the present invention. The red solid line is the band structure under strain, and the black dotted line is the band structure under original state. DETAILED DESCRIPTION

[0035] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without creative work are within the scope of protection of the present invention.

[0036] Example 1

[0037] This embodiment is a method for enhancing the output of an Au / 4H-SiC Schottky junction based on the piezoelectric optoelectronics effect, and the steps are as follows:

[0038] 1) A 10×10 mm N-type doped 4H-SiC single crystal (Hefei Kejing) was ultrasonically cleaned in acetone, ethanol, and deionized water for 20 min, and then dried for later use.

[0039] 2) Prepare 20 mL of a 1:1 volume ratio of ethanol and 40 wt% hydrofluoric acid solution and soak the cleaned wafer in it for 2 minutes to remove the surface oxide layer.

[0040] 3) The rough surface of a 4H-SiC single crystal was placed in contact with a Pt electrode, with the smooth surface facing a graphite electrode. The Pt electrode served as the anode and the graphite electrode served as the cathode. The crystal was then immersed in a pre-prepared supersaturated aqueous solution of ammonium bifluoride for 80 seconds. The pulse power supply used was a SOYI-3601M manufactured by Shanghai Suoyi Electronics Co., Ltd. The etching parameters were constant current pulses of 130 mA, 1250 Hz frequency, and a 50% duty cycle.

[0041] 4) The etching solution was replaced with a mixed solution of hydrofluoric acid (40 wt%), ethanol (AR) and hydrogen peroxide (30 wt%) in a volume ratio of 3:6:1. The etching parameters were the same as above until the cap layer fell off and the nanowires were exposed. Figure 1 As shown;

[0042] 5) Rinse the corroded nanowire array with ethanol and deionized water to remove the residual corrosive solution on the surface;

[0043] 6) Spin-coat the PMMA solution onto the etched 4H-SiC nanowire array at a spin coater speed of 4800 rpm for 30 seconds.

[0044] 7) Place the spin-coated nanowire array into an oxygen plasma cleaner for cleaning at a voltage of 700 V for 4 minutes to expose the tips of the 4H-SiC nanowires.

[0045] 8) Deposit a pair of gold electrodes on top of the nanowire array using a small ion sputtering device to form a Schottky junction, and then soak it in acetone for 12 hours to remove the PMMA coating;

[0046] 9) The Au / 4H-SiC Schottky junction based on the nanowire array structure is now fabricated. Copper wires are attached to each pair of gold electrodes for data collection.

[0047] Figure 1 Scanning electron micrographs A and B of the 4H-SiC nanowire array fabricated in this example show that the electrochemical etching method successfully fabricated a uniform and dense nanowire array with a large aspect ratio and effectively removed the cap layer at the top of the nanowire array.

[0048] Figure 2 Schematic diagram of the Au / 4H-SiC Schottky junction structure and test diagram prepared in this example. 1, 2, 3, 4, and 5 represent the test instrument (Keithley 4200), the stress application position, the light source incident position, the gold electrode, and the 4H-SiC nanowire array, respectively.

[0049] Figure 3 The Au / 4H-SiC Schottky junction fabricated in this example shows test data in dark (left) and light-exposed (right) conditions. The specific test conditions are as follows: First, the IV curve of the Schottky junction is measured in the dark, and stress is applied to the top of the nanowire array using a piezoelectric motor. Figure 3 As shown in the data, it can be seen that as the stress increases, the current through the Schottky junction also gradually increases, indicating that the piezoelectric potential induced by stress at the Schottky junction can effectively regulate its electrical properties. On this basis, after removing the stress, we irradiated a 360nm light source at the top of the nanowire and tested the response of the nanowire array Schottky junction to 360nm light. Subsequently, stress was applied to the top of the nanowire array. It can be seen that the response of the Schottky junction to 360nm light is enhanced with the application of stress, indicating that this method can be used to enhance the optical response capability of the Au / 4H-SiC Schottky junction in the 360nm band. At the maximum compressive strain, the output performance of the Schottky junction in the dark state increased by about 160%, and the output performance after the addition of light increased by about 25%.

[0050] Figure 4 Schematic diagram of stress regulation in this embodiment. The red solid line is the band structure under strain, and the black dotted line is the band structure under original state. Figure 4 As shown in the figure, 20, 40, 60, and 80 nm represent the displacement of the piezoelectric motor. The larger the displacement, the greater the corresponding strain. Figure 2 When displacement is applied to the top of the nanowire array, the nanowires will be strained, and piezoelectric polarization charge will be induced at the Schottky junction formed by the gold electrode and 4H-SiC, further changing the potential barrier height at the junction, regulating the efficiency of carriers crossing the potential barrier, and realizing a change in the output current.

[0051] Example 2

[0052] This embodiment is a method for enhancing the output of an Au / 4H-SiC Schottky junction based on the piezoelectric optoelectronics effect, and the steps are as follows:

[0053] 1) A 10×10 mm N-type doped 4H-SiC single crystal (Hefei Kejing) was ultrasonically cleaned in acetone, ethanol, and deionized water for 25 min, and then dried for later use.

[0054] 2) Prepare 20 mL of a 1:1 volume ratio of ethanol and 40 wt% hydrofluoric acid solution and soak the cleaned wafer in it for 2 minutes to remove the surface oxide layer.

[0055] 3) The rough surface of a 4H-SiC single crystal was placed in contact with a Pt electrode, with the smooth surface facing a graphite electrode. The Pt electrode served as the anode and the graphite electrode served as the cathode. The crystal was then immersed in a pre-prepared supersaturated aqueous solution of ammonium bifluoride for 85 seconds. The pulse power supply used was a SOYI-3601M manufactured by Shanghai Suoyi Electronics Co., Ltd. The etching parameters were a constant current pulse of 100 mA, a frequency of 1250 Hz, and a duty cycle of 50%.

[0056] 4) The etching solution was replaced with a mixed solution of hydrofluoric acid (40 wt%), ethanol (AR) and hydrogen peroxide (30 wt%) in a volume ratio of 3:6:1. The etching parameters were the same as above until the cap layer fell off and the nanowires were exposed. Figure 1 As shown;

[0057] 5) Rinse the corroded nanowire array with ethanol and deionized water to remove the residual corrosive solution on the surface;

[0058] 6) Spin-coat the PMMA solution onto the etched 4H-SiC nanowire array at a spin coater speed of 3800 rpm for 32 seconds.

[0059] 7) Place the spin-coated nanowire array into an oxygen plasma cleaner for cleaning at a voltage of 600 V for 5 minutes to expose the tips of the 4H-SiC nanowires.

[0060] 8) Depositing a pair of gold electrodes on top of the nanowire array using a small ion sputtering device to form a Schottky junction, and then soaking it in acetone for 10 hours to remove the PMMA coating;

[0061] 9) The Au / 4H-SiC Schottky junction based on the nanowire array structure is now fabricated. Copper wires are attached to each pair of gold electrodes for data collection.

[0062] Example 3

[0063] This embodiment is a method for enhancing the output of an Au / 4H-SiC Schottky junction based on the piezoelectric optoelectronics effect, and the steps are as follows:

[0064] 1) A 10×10 mm N-type doped 4H-SiC single crystal (Hefei Kejing) was ultrasonically cleaned in acetone, ethanol, and deionized water for 30 min, and then dried for later use.

[0065] 2) Prepare 20 mL of a 1:1 volume ratio of ethanol and 40 wt% hydrofluoric acid solution and soak the cleaned wafer in it for 2 minutes to remove the surface oxide layer.

[0066] 3) The rough surface of a 4H-SiC single crystal was placed in contact with a Pt electrode, with the smooth surface facing a graphite electrode. The Pt electrode served as the anode and the graphite electrode served as the cathode. The crystal was then immersed in a pre-prepared supersaturated aqueous solution of ammonium bifluoride for 90 seconds. The pulse power supply used was a SOYI-3601M manufactured by Shanghai Suoyi Electronics Co., Ltd. The etching parameters were a constant current pulse of 110 mA, a frequency of 1250 Hz, and a duty cycle of 50%.

[0067] 4) The etching solution was replaced with a mixed solution of hydrofluoric acid (40 wt%), ethanol (AR) and hydrogen peroxide (30 wt%) in a volume ratio of 3:6:1. The etching parameters were the same as above until the cap layer fell off and the nanowires were exposed. Figure 1 As shown;

[0068] 5) Rinse the corroded nanowire array with ethanol and deionized water to remove the residual corrosive solution on the surface;

[0069] 6) Spin-coat the PMMA solution onto the etched 4H-SiC nanowire array at a spin coater speed of 4000 r / s for 35 s.

[0070] 7) Place the spin-coated nanowire array into an oxygen plasma cleaner to clean the 4H-SiC nanowire tips at a voltage of 650 V for 4 minutes.

[0071] 8) Depositing a pair of gold electrodes on top of the nanowire array using a small ion sputtering device to form a Schottky junction, and then soaking it in acetone for 11 hours to remove the PMMA coating;

[0072] 9) The Au / 4H-SiC Schottky junction based on the nanowire array structure is now fabricated. Copper wires are attached to each pair of gold electrodes for data collection.

[0073] Example 4

[0074] This embodiment is a method for enhancing the output of an Au / 4H-SiC Schottky junction based on the piezoelectric optoelectronics effect, and the steps are as follows:

[0075] 1) A 10×10 mm N-type doped 4H-SiC single crystal (Hefei Kejing) was ultrasonically cleaned in acetone, ethanol, and deionized water for 30 min, and then dried for later use.

[0076] 2) Prepare 20 mL of a 1:1 volume ratio of ethanol and 40 wt% hydrofluoric acid solution and soak the cleaned wafer in it for 2 minutes to remove the surface oxide layer.

[0077] 3) The rough surface of a 4H-SiC single crystal was placed in contact with a Pt electrode, with the smooth surface facing a graphite electrode. The Pt electrode served as the anode and the graphite electrode served as the cathode. The crystal was then immersed in a pre-prepared supersaturated aqueous solution of ammonium bifluoride for 100 seconds. The pulse power supply used was a SOYI-3601M manufactured by Shanghai Suoyi Electronics Co., Ltd. The etching parameters were constant current pulses of 120 mA, 1250 Hz frequency, and a 50% duty cycle.

[0078] 4) The etching solution was replaced with a mixed solution of hydrofluoric acid (40 wt%), ethanol (AR) and hydrogen peroxide (30 wt%) in a volume ratio of 3:6:1. The etching parameters were the same as above until the cap layer fell off and the nanowires were exposed. Figure 1 As shown;

[0079] 5) Rinse the corroded nanowire array with ethanol and deionized water to remove the residual corrosive solution on the surface;

[0080] 6) Spin-coat the PMMA solution onto the etched 4H-SiC nanowire array at a spin coater speed of 4500 rpm for 40 s.

[0081] 7) Place the spin-coated nanowire array into an oxygen plasma cleaner for cleaning at a voltage of 700 V for 3 minutes to expose the tips of the 4H-SiC nanowires.

[0082] 8) Deposit a pair of gold electrodes on top of the nanowire array using a small ion sputtering device to form a Schottky junction, and then soak it in acetone for 12 hours to remove the PMMA coating;

[0083] 9) The Au / 4H-SiC Schottky junction based on the nanowire array structure is now fabricated. Copper wires are attached to each pair of gold electrodes for data collection.

[0084] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A method for enhancing the output of an Au / 4H-SiC Schottky junction based on the piezoelectric optoelectronics effect, characterized in that: The pretreated 4H-SiC single crystal wafer was vertically etched by electrochemical etching to obtain a 4H-SiC nanowire array. The 4H-SiC nanowire array was then wrapped by spin coating with a PMMA solution. The nanowire tops were exposed using an oxygen plasma cleaning technique. Au electrodes were deposited on the tops of the 4H-SiC nanowire arrays to form an Au / 4H-SiC Schottky junction. Finally, a piezoelectric motor was used to apply compressive strain to the nanowire tops to enhance the photoelectric response of the Au / 4H-SiC Schottky junction. The pretreatment method is: (1) Place the 4H-SiC single crystal in acetone, deionized water and ethanol in sequence for ultrasonic cleaning, and dry it for later use; (2) Soaking the cleaned 4H-SiC single crystal obtained in step (1) in a mixed solution of ethanol and hydrofluoric acid to remove surface oxides; In step (1), the 4H-SiC single crystal is N-type doped, and the ultrasonic cleaning time in acetone, deionized water, and ethanol is 20-30 minutes.

2. The method for enhancing the output of Au / 4H-SiC Schottky junction based on the piezoelectric optoelectronics effect according to claim 1, characterized in that: In step (2), the mass fraction of hydrofluoric acid is 40%, and the volume ratio of ethanol to hydrofluoric acid is 1:1; The electrochemical etching method comprises the following steps: connecting a 4H-SiC single crystal wafer to the anode of an electrochemical etching device, using a graphite electrode as a cathode, placing the wafer in a pre-etching solution for pre-etching, and then placing the wafer in the etching solution for further etching until the cap layer falls off, thereby obtaining a 4H-SiC nanowire array. The etched 4H-SiC nanowire array is then rinsed with ethanol and deionized water, respectively, to remove residual etching solution on the surface.

3. The method for enhancing the output of Au / 4H-SiC Schottky junction based on the piezoelectric optoelectronics effect according to claim 2, characterized in that: The anode is a Pt electrode, the pre-corrosion liquid is a supersaturated aqueous solution of ammonium fluoride, the pre-corrosion time is 80-100s, the pre-corrosion parameters are constant current pulse, the current is 100-130mA, the frequency is 1250Hz, and the duty cycle is 50%.

4. The method for enhancing the output of Au / 4H-SiC Schottky junction based on the piezoelectric optoelectronics effect according to claim 3, characterized in that: The etching solution is a mixed solution of 40wt% hydrofluoric acid, ethanol and 30wt% hydrogen peroxide, the volume ratio of 40wt% hydrofluoric acid, ethanol and 30wt% hydrogen peroxide is 3:6:1, and the etching parameters are constant current pulse, current is 100-130mA, frequency is 1250Hz, and duty cycle is 50%.

5. The method for enhancing the output of Au / 4H-SiC Schottky junction based on the piezoelectric optoelectronics effect according to claim 1, characterized in that: The spin coating is performed by using a glue spreader, the rotation speed of the glue spreader is 3800-4800r / s, and the glue spread time is 30-40s.

6. The method for enhancing the output of Au / 4H-SiC Schottky junction based on the piezoelectric optoelectronics effect according to claim 5, characterized in that: The voltage of the oxygen plasma cleaning technology is 600-700V and the time is 3-5 minutes.

7. The method for enhancing the output of Au / 4H-SiC Schottky junction based on the piezoelectric optoelectronics effect according to any one of claims 1 to 6, characterized in that: The electrode deposition method is as follows: a pair of gold electrodes are deposited on the top of the nanowire array by a small ion sputtering device to form an Au / 4H-SiC Schottky junction, and then the nanowire array is immersed in acetone for 10-12 hours to remove the PMMA coating.

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