Semiconductor processing apparatus

Abstract

The application discloses a semiconductor process equipment, and relates to the technical field of semiconductor processes. The semiconductor process equipment comprises a process chamber, a chuck for carrying a wafer and a wafer lifting mechanism are arranged in the process chamber, the wafer lifting mechanism is movable along a vertical direction, the wafer lifting mechanism comprises a lifting ring and at least two wafer support frames, the at least two wafer support frames are arranged on the lifting ring, the at least two wafer support frames are arranged at intervals along the circumference of the lifting ring, the lifting ring is arranged around the chuck, the inner diameter of the lifting ring is greater than the diameter of the chuck, and the wafer support frames extend towards the inner side of the lifting ring to support the wafer. The scheme can solve the problem that the structure of the chuck is relatively complex.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of semiconductor process, and particularly relates to a semiconductor process equipment. BACKGROUND

[0002] In the field of semiconductors, in the process of processing a wafer, the wafer is placed on a wafer lifting mechanism by a mechanical hand, the wafer lifting mechanism is lowered from a wafer transfer position to a process position, so that the wafer is placed on a chuck that carries the wafer, and after the wafer completes a process in a process chamber, the wafer is lifted to the wafer transfer position by the wafer lifting mechanism.

[0003] At present, most wafer lifting mechanisms include a needle assembly and a driving mechanism and the like, and the needle assembly is driven to ascend or descend by the driving mechanism, so as to realize the movement of the wafer between the wafer transfer position and the process position. However, the wafer lifting mechanism needs to be provided with a through hole on the chuck that carries the wafer to accommodate the needle assembly, so as to cause the structure of the chuck to be relatively complex. SUMMARY

[0004] The purpose of the embodiment of the application is to provide a semiconductor process equipment, which can solve the problem that the structure of the chuck is relatively complex.

[0005] In order to solve the above technical problems, the application is implemented as follows:

[0006] The embodiment of the application provides a semiconductor process equipment, which comprises a process chamber, a chuck for carrying a wafer and a wafer lifting mechanism are arranged in the process chamber, the wafer lifting mechanism is movable in a vertical direction, the wafer lifting mechanism comprises a lifting ring and at least two wafer support frames, the at least two wafer support frames are arranged on the lifting ring, and the at least two wafer support frames are arranged at intervals along the circumference of the lifting ring, the lifting ring is arranged around the chuck, and the inner diameter of the lifting ring is greater than the diameter of the chuck, and the wafer support frame extends towards the inner side of the lifting ring to support the wafer.

[0007] Optionally, the chuck has a first wafer support surface, the wafer support frame has a second wafer support surface, and the wafer lifting mechanism is movable in the vertical direction between a process position and a wafer transfer position,

[0008] When the wafer lifting mechanism is located at the process position, the first wafer support surface is flush with the second wafer support surface, or the first wafer support surface is higher than the second wafer support surface.

[0009] Optionally, the wafer support frame comprises a connecting portion and a supporting portion, one end of the connecting portion is connected with the lifting ring, the other end of the connecting portion is connected with the supporting portion, the supporting portion extends towards the inner side of the lifting ring and is arranged opposite to the lifting ring, the supporting portion has the second wafer supporting surface, the edge of the chuck is provided with a positioning groove,

[0010] When the wafer lifting mechanism is located at the process position, the supporting portion is positioned and matched with the positioning groove.

[0011] Optionally, a chuck fixing member is further arranged in the process chamber, the chuck fixing member is arranged between the outer circumferential surface of the chuck and the side wall of the process chamber.

[0012] Optionally, a heat insulation space is arranged between the chuck and the bottom wall of the process chamber.

[0013] Optionally, the chuck fixing member comprises a first arc-shaped plate, a second arc-shaped plate and a connecting member, the connecting member is connected between the first arc-shaped plate and the second arc-shaped plate, the first arc-shaped plate is matched and fixedly connected with the outer circumferential surface of the chuck, and the second arc-shaped plate is matched and fixedly connected with the side wall of the process chamber.

[0014] Optionally, the process chamber is provided with a plasma channel, an inner liner and a heating member are further arranged in the process chamber, the inner liner comprises a top plate and an annular side plate which are connected, the top plate is arranged opposite to the top of the process chamber, the top plate is provided with a plurality of through holes, the plasma channel is communicated with the inner space of the inner liner through the plurality of through holes, the heating member is arranged on one side of the top plate facing the top, and the annular side plate is provided with a first transmission port.

[0015] Optionally, the heating member comprises a first straight line segment, an arc-shaped segment and a second straight line segment which are connected in sequence, the first straight line segment is arranged opposite to the second straight line segment, and the arc-shaped segment is arranged around the plasma channel.

[0016] Optionally, in the direction that the center of the top plate extends to the edge of the top plate, the distance between the top plate and the top of the process chamber gradually increases.

[0017] Optionally, the process chamber is provided with a first avoiding hole, a driving mechanism, an extension rod and a sealing sleeve are arranged outside the process chamber, the sealing sleeve is sealingly arranged on the outer wall of the process chamber, the driving mechanism is arranged on the outer wall of the sealing sleeve, the sealing sleeve is provided with a second avoiding hole, the output shaft of the driving mechanism extends into the sealing sleeve through the second avoiding hole and is connected with one end of the extension rod, and the other end of the extension rod is connected with the lifting ring through the first avoiding hole.

[0018] Optionally, the semiconductor process equipment further comprises a first sealing ring and a second sealing ring, one side of the driving mechanism towards the sealing sleeve is provided with a first mounting groove, the first mounting groove is arranged around the output shaft of the driving mechanism, the first sealing ring is arranged in the first mounting groove, the first sealing ring is in sealing cooperation with the sealing sleeve, the outer surface of the process chamber is provided with a second mounting groove, the second sealing ring is arranged in the second mounting groove, and the second sealing ring is in sealing cooperation with the sealing sleeve.

[0019] Optionally, the semiconductor process equipment in any of the above embodiments further comprises at least one wafer transfer chamber, the at least one wafer transfer chamber is stacked with the process chamber.

[0020] Optionally, the semiconductor process equipment further comprises a vacuum pumping device, a vacuum main pipeline and at least two vacuum branch pipelines, the first end of each of the vacuum branch pipelines is in communication with the process chamber, the second end of each of the vacuum branch pipelines is in communication with the first end of the vacuum main pipeline, the vacuum branch pipelines are arranged in sequence and spaced apart along the circumference of the process chamber, and the second end of the vacuum main pipeline is in communication with the vacuum pumping device.

[0021] Optionally, the vacuum main pipeline and the vacuum pumping device are arranged on the side of the wafer transfer chamber away from the process chamber, and the port of the second end of each of the vacuum branch pipelines is arranged at a position lower than the first wafer support surface.

[0022] Optionally, the process chamber and the at least one wafer transfer chamber are detachably stacked.

[0023] Optionally, one of the wafer transfer chamber and the process chamber is provided with a positioning hole, and the other is provided with a positioning protrusion, the positioning protrusion is in positioning cooperation with the positioning hole, so that the wafer transfer chamber and the process chamber are coaxial.

[0024] Optionally, the process chamber in any of the above embodiments is a degumming chamber.

[0025] In the embodiment of the present application, the wafer is placed on the wafer support frame, and the wafer support frame is arranged on the lifting ring. The wafer is lifted by the lifting ring during the lifting process. Since the inner diameter of the lifting ring is larger than the diameter of the chuck, the lifting ring can avoid the chuck and freely lift, so as to place the wafer on the chuck or lift the wafer from the chuck. It can be seen that the wafer lifting mechanism does not need to be arranged in the chuck, so as to avoid opening a through hole in the chuck for avoiding the wafer lifting mechanism, so as to make the structure of the chuck more simple. Therefore, the embodiment of the present application can solve the problem that the structure of the chuck is relatively complex. BRIEF DESCRIPTION OF DRAWINGS

[0026] Figure 1A structural schematic diagram of a semiconductor process equipment disclosed by an embodiment of the present application;

[0027] Figure 2 A side view of a semiconductor process equipment disclosed by an embodiment of the present application;

[0028] Figure 3 A structural schematic diagram of a partial structure of a semiconductor process equipment disclosed by an embodiment of the present application;

[0029] Figure 4 An exploded view of a lining and a heating element disclosed by an embodiment of the present application;

[0030] Figure 5 A top view of a lining and a heating element disclosed by an embodiment of the present application;

[0031] Figures 6 to 8 Structural schematic diagrams of a lining and a heating element in different perspectives disclosed by an embodiment of the present application;

[0032] Figures 9 to 10 A sectional view of a partial structure of a semiconductor process equipment disclosed by an embodiment of the present application;

[0033] Figure 11 A sectional view of a partial structure of a semiconductor process equipment disclosed by an embodiment of the present application; Figure 10 A sectional view of a partial structure of a semiconductor process equipment disclosed by an embodiment of the present application;

[0034] Figure 12 A top view of a partial structure of a semiconductor process equipment disclosed by an embodiment of the present application;

[0035] Figure 13 A sectional view of a partial structure of a semiconductor process equipment disclosed by an embodiment of the present application; Figure 12 A sectional view of a partial structure of a semiconductor process equipment disclosed by an embodiment of the present application;

[0036] Figure 14 A sectional view of a partial structure of a semiconductor process equipment disclosed by an embodiment of the present application; Figure 13 An enlarged view of a partial structure of a semiconductor process equipment disclosed by an embodiment of the present application;

[0037] Figures 15 to 17 A sectional view of a partial structure of a semiconductor process equipment disclosed by an embodiment of the present application; Figure 14 A sectional view of a partial structure of a semiconductor process equipment disclosed by an embodiment of the present application;

[0038] Figure 18 A structural schematic diagram of a semiconductor process equipment disclosed by an embodiment of the present application;

[0039] Figure 19 A sectional view of a semiconductor process equipment disclosed by an embodiment of the present application;

[0040] Figure 20 A sectional view of a semiconductor process equipment disclosed by another embodiment of the present application.

[0041] Explanation of reference numerals:

[0042] 110-Wafer transfer chamber, 111-First wafer transfer chamber, 112-Second wafer transfer chamber, 120-Process chamber, 121-Plasma channel, 122-First clearance hole, 123-Top, 124-Second wafer transfer port, 130-Microwave source, 140-Evacuation device, 150-Chuck, 151-First wafer support surface, 152-Positioning slot, 160-Wafer lifting mechanism, 161-Lifting ring, 162-Wafer support frame, 162a-Second wafer support surface, 162b-Connecting part, 162c-Supporting part, 170-Drive mechanism, 180-Chuck fixing part, 181-First arc plate, 1 82-Second arc plate, 183-Connecting part, 190-Inner liner, 191-Top plate, 191a-Through hole, 191b-Positioning groove, 192-Annular side plate, 192a-First wafer transfer port, 210-Heating element, 211-First straight segment, 212-Arc segment, 213-Third straight segment, 220-Extension rod, 230-Sealing sleeve, 240-Main vacuum pipe, 250-Vacuum branch pipe, 260-Fixing element, 270-First sealing ring, 280-Second sealing ring, 310-Front-end module, 320-Wafer cassette, 330-Buffer decompression chamber, 340-Removal chamber, 400-Wafer. Detailed Implementation

[0043] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0044] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and the number of objects is not limited; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0045] The semiconductor process equipment provided in this application will be described in detail below with reference to the accompanying drawings, through specific embodiments and application scenarios.

[0046] like Figures 1 to 20As shown in the figure, this application provides a semiconductor process apparatus, including a process chamber 120. Optionally, the process chamber 120 can be a deposition chamber, an etching chamber, etc., without specific limitations. The process chamber 120 is provided with a chuck 150 for carrying a wafer 400 and a wafer lifting mechanism 160. Optionally, the chuck 150 can be an electrostatic chuck, a mechanical chuck, etc., without specific limitations. The wafer lifting mechanism 160 can move in a vertical direction. The wafer lifting mechanism 160 includes a lifting ring 161 and at least two wafer support frames 162. The at least two wafer support frames 162 are all disposed on the lifting ring 161, and the at least two wafer support frames 162 are spaced apart circumferentially along the lifting ring 161. The lifting ring 161 surrounds the chuck 150, and the inner diameter of the lifting ring 161 is larger than the diameter of the chuck 150. The wafer support frames 162 extend toward the inner side of the lifting ring 161 to support the wafer 400. Optionally, the diameter of the wafer 400 can be smaller than the diameter of the chuck 150; further optionally, the inner diameter of the lifting ring 161 can be 314 mm, the diameter of the chuck 150 can be 310 mm, and the diameter of the wafer 400 can be 400 mm. Of course, the dimensions of the lifting ring 161, the chuck 150, and the wafer 400 can also be selected according to actual needs, and the embodiments of this application do not impose specific limitations.

[0047] In this embodiment, the wafer 400 is placed on the wafer support 162, which is mounted on the lifting ring 161. During the lifting process of the lifting ring 161, the wafer 400 is also lifted. Since the inner diameter of the lifting ring 161 is larger than the diameter of the chuck 150, the lifting ring 161 can avoid the chuck 150 and move freely, thereby placing the wafer 400 on the chuck 150 or lifting the wafer 400 from the chuck 150. Therefore, the wafer lifting mechanism 160 does not need to pass through the chuck 150, thus avoiding the need for through holes in the chuck 150 to avoid the wafer lifting mechanism 160, making the chuck 150 simpler. Therefore, this embodiment solves the problem of the relatively complex structure of the current chuck 150.

[0048] like Figures 10 to 14As shown, in one optional embodiment, the chuck 150 has a first wafer support surface 152, the wafer support frame 162 has a second wafer support surface 162a, and the wafer lifting mechanism 160 can move vertically between the process position and the wafer transfer position. When the wafer lifting mechanism 160 is in the process position, the first wafer support surface 151 is flush with the second wafer support surface 162a, or the first wafer support surface 151 is higher than the second wafer support surface 162a. In this application, when the first wafer support surface 151 is flush with the second wafer support surface 162a, the area of ​​the support surface supporting the wafer 400 is larger, which is beneficial to improving the stability of the wafer 400 in the process. When the first wafer support surface 151 is higher than the second wafer support surface 162a, it is only necessary to ensure that the second wafer support surface 162a is lower than the first wafer support surface 151, which can reduce the control accuracy of the lifting ring 161 and reduce the control difficulty of the entire wafer lifting mechanism 160.

[0049] In an optional embodiment, the wafer support 162 can be a support rod extending along the moving direction of the lifting ring 161. The support rod can be disposed on the inner ring surface of the lifting ring 161, and one end of the support rod can support the wafer 400. In this case, the area of ​​the support surface of the support rod supporting the wafer 400 is small, resulting in poor stability of the wafer 400 during the lifting process. Based on this, in another optional embodiment, such as... Figure 11 As shown, the wafer support frame 162 includes a connecting part 162b and a supporting part 162c. One end of the connecting part 162b is connected to the lifting ring 161, and the other end of the connecting part 162b is connected to the supporting part 162c. The supporting part 162c extends toward the inside of the lifting ring 161 and is disposed opposite to the lifting ring 161. The supporting part 162c has a second wafer support surface 162a. The area of ​​this support surface is large, which is beneficial to improving the stability of the wafer 400 during the lifting process.

[0050] Optionally, the edge of the chuck 150 is provided with a positioning groove 152. When the wafer lifting mechanism 160 is in the process position, the support part 162c is positioned and engaged with the positioning groove 152, thereby reliably restricting the wafer lifting mechanism 160 from moving further, thus improving the stability of the wafer lifting mechanism 160. Optionally, at this time, the first wafer support surface 151 can be flush with the second wafer support surface 162a, which can prevent the wafer lifting ring 161 from continuing to descend after the wafer 400 is placed on the chuck 150, so that the first wafer support surface 151 and the second wafer support surface 162a reliably support the wafer 400 together, improving the utilization rate of the wafer lifting mechanism 160.

[0051] The chuck 150 can be mounted at the bottom of the process chamber 120 by a fixing device, or, as... Figure 9As shown, a chuck fixing member 180 is also provided inside the process chamber 120. The chuck fixing member 180 is disposed between the outer peripheral surface of the chuck 150 and the side wall of the process chamber 120. In this embodiment, the chuck 150 is connected to the side wall of the process chamber 120, and no space needs to be reserved between the chuck 150 and the bottom wall of the process chamber 120 for a fixing device for mounting the chuck 150. Therefore, the distance between the chuck 150 and the bottom wall of the process chamber 120 can be reduced, thereby reducing the internal space of the process chamber 120. Optionally, the chuck fixing member 180 has heat insulation properties, that is, the chuck fixing member 180 can be made of heat insulation material to prevent heat from the chuck 150 from being transferred to the side wall of the process chamber 120, thereby improving the working efficiency of the chuck 150.

[0052] In a further optional embodiment, there is a heat insulation space between the chuck 150 and the bottom wall of the process chamber 120, thereby reducing heat loss from the chuck 150 and improving the working efficiency of the chuck 150.

[0053] Optionally, the number of chuck fixing parts 180 can be one. During the installation of the chuck 150, if the size of the chuck fixing part 180 is too large or too small, it will affect the installation of the chuck 150. Therefore, only when the size of the chuck fixing part 180 is just right can the chuck 150 be successfully installed on the side wall of the transfer chamber 110, which will increase the design difficulty of the chuck fixing part 180. Optionally, the number of chuck fixing parts 180 is at least two, and each chuck fixing part 180 is arranged at intervals along the circumference of the chuck 150. This can provide a certain deformation space for the chuck fixing parts 180 and can save the manufacturing cost of the chuck fixing parts 180.

[0054] The chuck fixing component 180 can be a support rod, which is supported between the outer peripheral surface of the chuck 150 and the side wall of the process chamber 120. Because the connection area between the support rod and the chuck 150, and between the support rod and the side wall of the process chamber 120, is small, the stability of the chuck 150 is poor. Therefore, if... Figure 9 As shown, in one optional embodiment, the chuck fixing member 180 includes a first arc-shaped plate 181, a second arc-shaped plate 182, and a connector 183. The connector 183 is connected between the first arc-shaped plate 181 and the second arc-shaped plate 182. The first arc-shaped plate 181 is attached to and fixedly connected to the outer peripheral surface of the chuck 150, and the second arc-shaped plate 182 is attached to and fixedly connected to the side wall of the process chamber 120, so as to increase the connection area between the chuck fixing member 180 and the chuck 150 and the connection area between the chuck fixing member 180 and the side wall of the process chamber 120, thereby improving the stability of the chuck 150.

[0055] like Figures 3 to 8As shown, in another optional embodiment, the semiconductor process equipment further includes a microwave source 130, and a process chamber 120 is provided with a plasma channel 121. Optionally, the emitting end of the microwave source 130 is connected to the process chamber 120 through the plasma channel 121, and the outlet of the plasma channel 121 is disposed opposite to the first wafer support surface 151 of the chuck 150, so that the plasma is sputtered onto the wafer 400 as much as possible after passing through the plasma channel 121, thereby improving the process efficiency of wafer 400 processing. The process chamber 120 is also provided with a liner 190 and a heating element 210. The heating element 210 is used to heat the internal space of the process chamber 120. Optionally, the temperature of the heating element 210 can be 50-60°C, and of course, it can be selected according to actual needs, without specific limitations. The liner 190 includes a connected top plate 191 and an annular side plate 192. The top plate 191 is disposed opposite to the top 123 of the process chamber 120. The top plate 191 has multiple through holes 191a. The plasma channel 121 is connected to the internal space of the liner 190 through the multiple through holes 191a. At this time, the plasma emitted by the microwave source 130 is sputtered into the internal space of the liner 190. The liner 190 can be used to protect the process chamber 120. Optionally, the heating element 210 is disposed on the side of the top plate 191 facing the top 123 to prevent the plasma sputtered into the internal space of the liner 190 from hitting the heating element 210, thereby protecting the heating element 210. The annular side plate 192 has a first wafer transfer port 192a, and the side wall of the process chamber 120 has a second wafer transfer port 124. The second wafer transfer port 124 is disposed opposite to the first wafer transfer port 192a to facilitate the transfer of the wafer 400 by the robot arm.

[0056] Optionally, such as Figure 4 and Figure 5 As shown, the process chamber 120 is also equipped with a fixing member 260. The fixing member 260 includes a first connecting part, a positioning part, and a second connecting part connected in sequence. The positioning part has an arc-shaped structure. The top plate 191 has a positioning groove 191b on the side facing the top 123. At least a portion of the heating element 210 is disposed in the positioning groove 191b. The first connecting part and the second connecting part of the fixing member 260 are respectively connected to the two sides of the positioning groove 191b. The positioning part presses against the outer peripheral surface of the heating element 210, thereby fixing the heating element 210. Further optionally, the number of fixing members 260 is at least two, and each fixing member 260 is arranged sequentially at intervals along the extension direction of the heating element 260, thereby improving the stability of the heating element 210.

[0057] Optionally, multiple through holes 191a are radially distributed from the center region to the edge region of the top plate 191, and the diameter of each through hole gradually increases in the direction of extension from the center region to the edge region, thereby avoiding uneven gas pressure distribution in the plasma channel 121.

[0058] In one optional embodiment, the heating element 210 includes a first straight segment 211, an arc-shaped segment 212, and a second straight segment 213 connected in sequence. The first straight segment 211 and the second straight segment 213 are arranged opposite to each other, and the arc-shaped segment 212 surrounds the plasma channel 121, thereby heating the process chamber 120 from all directions and improving the heating effect. Optionally, one of the first straight segment 211 and the second straight segment 213 is the input end of the heating medium, and the other is the output end of the heating medium, so that the heating medium inside the heating element 210 circulates, thereby dissipating heat. Of course, the heating element 210 can also be an electric heating element, and no specific limitation is made here.

[0059] Optionally, when a heating medium is present inside the heating element 210, the first straight segment 211 and the second straight segment 213 can be arranged alternately. Since one of the first straight segment 211 and the second straight segment 213 is the input end of the heating medium and the other is the output end of the heating medium, when the first straight segment 211 and the second straight segment 213 can be arranged alternately, mutual interference between the two can be avoided, that is, a portion of the heat at the input end is carried away by the output end, thereby improving the heating efficiency of the heating element 210.

[0060] In a further optional embodiment, the distance between the top plate 191 and the top 123 of the process chamber 120 gradually increases in the direction extending from the center of the top plate 191 to the edge of the top plate 191, so that the plasma sputtered onto the top plate 191 can flow rapidly to the surface of the wafer 400, thereby improving the operating efficiency of the process chamber 120. Optionally, the top plate 191 has a conical structure. More optionally, the side of the top plate 191 facing away from the top 123 of the process chamber 120 is an arc-shaped surface, thereby concentrating the plasma sputtered onto the top plate 191 and allowing it to flow to the surface of the wafer 400, thereby further improving the operating efficiency of the process chamber 120.

[0061] like Figures 13 to 14As shown, in another optional embodiment, the process chamber 120 is provided with a first clearance hole 122. A drive mechanism 170, an extension rod 220, and a sealing sleeve 230 are provided outside the process chamber 120. Optionally, the drive mechanism 170 can be a motor, a hydraulic cylinder, etc., without specific limitations. The sealing sleeve 230 is sealed to the outer wall of the process chamber 120, isolating the internal space of the process chamber 120 from the external environment, thereby ensuring that the internal space of the process chamber 120 is in a more optimal process state and improving the working efficiency of the process chamber 120. A drive mechanism 170 is disposed on the outer wall of a sealing sleeve 230. The sealing sleeve 230 has a second clearance hole. The output shaft of the drive mechanism 170 extends through the second clearance hole into the sealing sleeve 230 and is connected to one end of an extension rod 220. The other end of the extension rod 220 passes through a first clearance hole 122 and is connected to a lifting ring 161. The drive mechanism 170 drives the lifting ring 161 to move vertically between the process position and the wafer transfer position via the extension rod 220. The extension rod 220 is always located inside the sealing sleeve 230. When the drive mechanism 170 drives the lifting ring 161 to rise to the wafer transfer position, the robot places the wafer 400 onto the second wafer support surface 162a of the wafer support frame 162. Then, the drive mechanism 170 drives the lifting ring 161 to descend to the process position so that the wafer 400 is placed on the chuck 150. In this embodiment, the drive mechanism 170 is disposed outside the process chamber 120, which can avoid occupying the internal space of the process chamber 120. Furthermore, without being limited by the internal space of the process chamber 120, the type and size of the drive mechanism 170 can be flexibly selected. In addition, during the processing of the wafer 400, the internal temperature of the process chamber 120 is high. Disposing the drive mechanism 170 outside the process chamber 120 can prevent the drive mechanism 170 from being damaged by high temperature, thereby extending the service life of the drive mechanism 170.

[0062] In further optional embodiments, such as Figure 14 As shown, the semiconductor process equipment also includes a first sealing ring 270 and a second sealing ring 280. A first mounting groove is provided on the side of the drive mechanism 170 facing the sealing sleeve 230, and the first mounting groove surrounds the output shaft of the drive mechanism 170. The first sealing ring 270 is disposed in the first mounting groove and seals with the sealing sleeve 230. A second mounting groove is provided on the outer surface of the process chamber 120, and the second sealing ring 280 is disposed in the second mounting groove and seals with the sealing sleeve 230, thereby further improving the sealing performance of the internal space of the process chamber 120. Optionally, both the first sealing ring 270 and the second sealing ring 280 can be O-rings; other types of sealing rings can also be used, and no specific limitations are imposed here.

[0063] like Figures 19 to 20As shown, in an optional embodiment, the semiconductor process equipment in any of the above embodiments further includes at least one wafer transfer chamber 110. The at least one wafer transfer chamber 110 is stacked with the process chamber 120. Optionally, the process chamber 120 can be disposed above or below the wafer transfer chamber 110. In this case, plasma can enter the process chamber 120 from its side wall. The specific arrangement of the process chamber 120 is not limited here. This embodiment of the application avoids the process chamber 120 occupying a separate process chamber position by stacking the process chamber 120 with the wafer transfer chamber 110, thereby improving the space utilization of the semiconductor process equipment.

[0064] Optionally, the number of wafer transfer chambers 110 can be one or at least two. When the number of wafer transfer chambers 110 is at least two, the wafer transfer chamber 110 includes a first wafer transfer chamber 111 and a second wafer transfer chamber 112 stacked together. In this case, the process chamber 120 is stacked on top or bottom of the multiple wafer transfer chambers 110, thereby further improving the space utilization of the semiconductor process equipment.

[0065] like Figures 15 to 18 As shown, in a further optional embodiment, the semiconductor process equipment also includes a vacuum pumping device 140, a main vacuum line 240, and at least two vacuum branch lines 250. The vacuum pumping device 140 is connected to the process chamber 120. Optionally, the vacuum pumping device 140 can be a pressure control component. The first end of each vacuum branch line 250 is connected to the process chamber 120. The vacuum branch lines 250 are arranged sequentially and spaced apart along the circumference of the process chamber 120. Multiple vacuum branch lines 250 facilitate the faster discharge of gas from the process chamber 120. The second end of each vacuum branch line 250 is connected to the first end of the main vacuum line 240. The second end of the main vacuum line 240 is connected to the vacuum pumping device 140. The vacuum pumping device 140 can extract the gas and particulate matter generated during the process from the process chamber 120.

[0066] Optionally, both the main vacuum line 240 and the pumping device 140 are located on the side of the wafer transfer chamber 110 away from the process chamber 120. That is, each vacuum branch line 250 bypasses the wafer transfer chamber 110 and converges at the main vacuum line 240, thus avoiding the pumping device 140 occupying space in other chambers of the semiconductor process equipment. Therefore, this arrangement of vacuum lines in the embodiments of this application is beneficial for improving the space utilization of the semiconductor process equipment.

[0067] During the process, plasma is sputtered onto the liner 190, causing a small amount of byproduct particles to detach from the liner 190. These particles will fall to the bottom of the process chamber 120. Optionally, the ports at the second ends of each vacuum branch line 250 are positioned below the first wafer support surface 151 of the chuck 150, so that the particles at the bottom of the process chamber 120 are sufficiently removed.

[0068] Optionally, the inner diameter of the main vacuum line 240 is larger than the inner diameter of each vacuum branch line 250 to facilitate smooth gas flow; further optionally, the inner diameter of the main vacuum line 240 can be 100mm and the inner diameter of the vacuum branch line 250 can be 75mm. Of course, the selection can be made according to actual needs, and no specific restrictions are imposed here.

[0069] In another alternative embodiment, the process chamber 120 is detachably stacked with at least one transfer chamber 110. Compared to non-detachable stacking methods such as welding, when the transfer chamber 110 or the process chamber 120 requires cleaning and maintenance, the detachable stacking method allows the process chamber 120 to be removed from the transfer chamber 110, thereby enabling cleaning and maintenance of either the transfer chamber 110 or the process chamber 120.

[0070] In a further optional embodiment, at least one of the wafer transfer chamber 110 and the process chamber 120 is provided with a positioning hole, and the other is provided with a positioning protrusion. The positioning protrusion engages with the positioning hole to make the wafer transfer chamber 110 and the process chamber 120 coaxial, thereby aligning the process chamber 120 and ensuring that the wafer 400 in the process chamber 120 and the wafer transfer chamber 110 are coaxial during the process. Therefore, during wafer transfer, only the vertical coordinates of the wafer 400 before and after transfer need to be changed, while the coordinates in the direction perpendicular to the height remain unchanged. This arrangement facilitates more accurate wafer transfer. After the positioning protrusion engages with the positioning hole, the process chamber 120 and the wafer transfer chamber 110 are then connected and fixed by bolts.

[0071] In another optional embodiment, the process chamber 120 in any of the above embodiments can be a photoresist removal chamber, in which the wafer 400 undergoes a photoresist removal process to remove the photoresist and residual halogen gases (such as Cl2, HBr, CF4, etc.) from the surface of the wafer 400.

[0072] like Figures 1 to 2As shown, optionally, the semiconductor process equipment also includes a front-end module 310, a wafer cassette 320, a buffer depressurization chamber 330, and a resist removal chamber. The front-end module 310 is disposed between the wafer cassette 320 and the transfer chamber 110. Optionally, the front-end module 310 includes structures such as a robotic arm; no specific limitations are imposed here. The wafer cassette 320 is connected to the transfer chamber 110 through the front-end module 310. The transfer chamber 110 and the process chamber 120 are spaced apart circumferentially along the buffer depressurization chamber 330, and the buffer depressurization chamber 330 is connected to both the transfer chamber 110 and the process chamber 120 to ensure the continuity of each process when processing the wafer 400. The resist removal chamber can be stacked with the transfer chamber 110. Optionally, the number of transfer chambers 110 can be at least two, thereby improving the transfer efficiency of the wafer 400. The resist removal chamber and the transfer chamber are arranged in a one-to-one correspondence to improve the efficiency of the resist removal process.

[0073] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. A semiconductor process apparatus, characterized in that, The system includes a process chamber (120), within which are provided a chuck (150) for carrying a wafer (400), a chuck fixing member (180), and a wafer lifting mechanism (160). The chuck fixing member (180) is disposed between the outer peripheral surface of the chuck (150) and the side wall of the process chamber (120). The wafer lifting mechanism (160) is movable in the vertical direction. The chuck fixing component (180) includes a first arc plate (181), a second arc plate (182), and a connector (183). The connector (183) is connected between the first arc plate (181) and the second arc plate (182). The first arc plate (181) is attached to and fixedly connected to the outer peripheral surface of the chuck (150). The second arc plate (182) is attached to and fixedly connected to the side wall of the process chamber (120). The wafer lifting mechanism (160) includes a lifting ring (161) and at least two wafer support frames (162). The at least two wafer support frames (162) are all disposed on the lifting ring (161) and are spaced apart circumferentially along the lifting ring (161). The lifting ring (161) surrounds the chuck (150) and the inner diameter of the lifting ring (161) is larger than the diameter of the chuck (150). The wafer support frames (162) extend toward the inner side of the lifting ring (161) to support the wafer (400).

2. The semiconductor process equipment according to claim 1, characterized in that, The chuck (150) has a first wafer support surface (151), the wafer support frame (162) has a second wafer support surface (162a), and the wafer lifting mechanism (160) can move vertically between the process position and the wafer transfer position. When the wafer lifting mechanism (160) is located in the process position, the first wafer support surface (151) is flush with the second wafer support surface (162a), or the first wafer support surface (151) is higher than the second wafer support surface (162a).

3. The semiconductor process equipment according to claim 2, characterized in that, The wafer support frame (162) includes a connecting part (162b) and a supporting part (162c). One end of the connecting part (162b) is connected to the lifting ring (161), and the other end of the connecting part (162b) is connected to the supporting part (162c). The supporting part (162c) extends toward the inside of the lifting ring (161) and is disposed opposite to the lifting ring (161). The supporting part (162c) has a second wafer support surface (162a). The edge of the chuck (150) is provided with a positioning groove (152). When the wafer lifting mechanism (160) is in the process position, the support (162c) is positioned and engaged with the positioning groove (152).

4. The semiconductor process equipment according to claim 1, characterized in that, There is a heat-insulating space between the chuck (150) and the bottom wall of the process chamber (120).

5. The semiconductor process equipment according to claim 1, characterized in that, The process chamber (120) is provided with a plasma channel (121). The process chamber (120) is also provided with a liner (190) and a heating element (210). The liner (190) includes a connected top plate (191) and an annular side plate (192). The top plate (191) is disposed opposite to the top (123) of the process chamber (120). The top plate (191) is provided with a plurality of through holes (191a). The plasma channel (121) is connected to the internal space of the liner (190) through the plurality of through holes (191a). The heating element (210) is disposed on the side of the top plate (191) facing the top (123). The annular side plate (192) is provided with a first transfer port (192a).

6. The semiconductor process equipment according to claim 5, characterized in that, The heating element (210) includes a first straight segment (211), an arc segment (212), and a second straight segment (213) connected in sequence. The first straight segment (211) and the second straight segment (213) are arranged opposite to each other, and the arc segment (212) is arranged around the plasma channel (121).

7. The semiconductor process equipment according to claim 5, characterized in that, In the direction extending from the center of the top plate (191) to the edge of the top plate (191), the distance between the top plate (191) and the top (123) of the process chamber (120) gradually increases.

8. The semiconductor process equipment according to claim 1, characterized in that, The process chamber (120) is provided with a first clearance hole (122). The process chamber (120) is provided with a drive mechanism (170), an extension rod (220) and a sealing sleeve (230) outside the process chamber (120). The sealing sleeve (230) is sealed on the outer wall of the process chamber (120). The drive mechanism (170) is provided on the outer wall of the sealing sleeve (230). The sealing sleeve (230) is provided with a second clearance hole. The output shaft of the drive mechanism (170) extends through the second clearance hole into the sealing sleeve (230) and is connected to one end of the extension rod (220). The other end of the extension rod (220) passes through the first clearance hole (122) and is connected to the lifting ring (161).

9. The semiconductor process equipment according to claim 8, characterized in that, The semiconductor process equipment further includes a first sealing ring (270) and a second sealing ring (280). The drive mechanism (170) has a first mounting groove on the side facing the sealing sleeve (230). The first mounting groove is arranged around the output shaft of the drive mechanism (170). The first sealing ring (270) is disposed in the first mounting groove and is sealed to the sealing sleeve (230). The outer surface of the process chamber (120) is provided with a second mounting groove. The second sealing ring (280) is disposed in the second mounting groove and is sealed to the sealing sleeve (230).

10. The semiconductor process equipment according to any one of claims 1-9, characterized in that, The semiconductor process equipment further includes at least one wafer transfer chamber (110), which is stacked with the process chamber (120).

11. The semiconductor process equipment according to claim 10, characterized in that, The semiconductor process equipment further includes a vacuum pump (140), a main vacuum line (240), and at least two vacuum branch lines (250). The first end of each vacuum branch line (250) is connected to the process chamber (120), and the second end of each vacuum branch line (250) is connected to the first end of the main vacuum line (240). The vacuum branch lines (250) are arranged sequentially at intervals along the circumference of the process chamber (120), and the second end of the main vacuum line (240) is connected to the vacuum pump (140).

12. The semiconductor process equipment according to claim 11, characterized in that, The vacuum main pipeline (240) and the pumping device (140) are both located on the side of the wafer transfer chamber (110) away from the process chamber (120), and the second end of each vacuum branch pipeline (250) is located below the first wafer support surface (151) of the chuck (150).

13. The semiconductor process equipment according to claim 10, characterized in that, The process chamber (120) is detachably stacked with the at least one transfer chamber (110).

14. The semiconductor process equipment according to claim 13, characterized in that, One of the transfer chamber (110) and the process chamber (120) is provided with a positioning hole, and the other is provided with a positioning protrusion. The positioning protrusion is positioned and engaged with the positioning hole so that the transfer chamber (110) and the process chamber (120) are coaxial.

15. The semiconductor process equipment according to any one of claims 1-14, characterized in that, The process chamber (120) is a degumming chamber.

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