Deposition processing equipment

Abstract

The present invention belongs to the field of film deposition technology and discloses a deposition processing device. The deposition processing device includes a furnace body, wherein an air inlet plate and an air extraction plate are provided in the furnace body. The air extraction plate and the air inlet plate are arranged opposite each other so that a substrate can be placed between the two. The air inlet plate and the air extraction plate have evenly distributed first air holes, and the air inlet plate and the air extraction plate also have second air holes. The second air holes are connected to the first air holes through an air distribution channel so that gas can flow between the first air holes and the second air holes. By evenly arranging the first air holes on the air extraction plate and the air inlet plate and placing the substrate between the air extraction plate and the air inlet plate, the reaction area of ​​the substrate is evenly covered by gas, thereby improving the uniformity of the deposited film layer.

Description

Technical Field

[0001] The present invention relates to the technical field of film deposition, and in particular to a deposition processing device. Background Art

[0002] Plasma-enhanced chemical vapor deposition (PECVD) uses microwaves or radio frequency to ionize a gas containing the atoms that make up the film, forming a localized plasma. Plasma is highly chemically active and readily reacts, depositing the desired film on the substrate. PECVD equipment primarily consists of a loading chamber, a transfer chamber, and a process deposition chamber.

[0003] Currently, the gas inlet and outlet in the deposition chamber usually use long thin tubes extending from one end to the other, resulting in the gas coming out of the thin tubes being unable to evenly cover the entire reaction area of ​​the substrate, causing uneven gas distribution, resulting in very poor uniformity of the deposited film layer, and thus low battery conversion efficiency. Summary of the Invention

[0004] The object of the present invention is to provide a deposition processing device, which adopts a plate-type gas inlet and outlet plate with evenly distributed pores, so that the reaction area of ​​the substrate is evenly covered by gas, thereby improving the uniformity of the deposited film layer.

[0005] To achieve this object, the present invention adopts the following technical solutions:

[0006] A deposition processing device comprising:

[0007] a furnace body, the furnace body being used to accommodate the substrate;

[0008] an air intake plate, the air intake plate being arranged in the furnace body;

[0009] An exhaust plate, the exhaust plate and the air inlet plate are arranged opposite to each other in the furnace body so that the substrate can be placed between the exhaust plate and the air inlet plate; wherein:

[0010] The air inlet plate and the air extraction plate are provided with uniformly arranged first air holes, second air holes communicating with external equipment, and air distribution channels communicating with the first air holes and the second air holes.

[0011] Preferably, the air distribution channel also includes a primary air distribution channel and a secondary air distribution channel, the second air hole is connected to the primary air distribution channel, the primary air distribution channel is connected to at least one secondary air distribution channel, and the secondary air distribution channel is connected to multiple first air holes.

[0012] Preferably, the air distribution channel includes a three-level air distribution channel, a plurality of the first air holes are connected via the three-level air distribution channel to form an air distribution unit, and a plurality of the air distribution units are connected to the two-level air distribution channel.

[0013] Preferably, the path lengths from the connection point between the secondary air distribution channel and the tertiary air distribution channel in the air distribution unit to the first air holes in the air distribution unit are equal.

[0014] Preferably, a closure is provided at the port of the furnace body.

[0015] Preferably, the ends of the air intake plate and / or the air extraction plate are connected to the closing member to support and fix the air intake plate and / or the air extraction plate.

[0016] Preferably, the air inlet plate and / or the air extraction plate are arranged on the inner cavity wall of the furnace body.

[0017] Preferably, the air extraction plate and the air intake plate each include two plate-like structures that are interlocked with each other, each of the plate-like structures is provided with a semi-flow channel, and the semi-flow channels on the two plate-like structures are connected to form the air distribution channel.

[0018] Preferably, the diameters of the first air holes and the second air holes on the air extraction plate are not smaller than the diameters of the first air holes and the second air holes on the air inlet plate.

[0019] Preferably, the furnace body is cylindrical or square.

[0020] Beneficial effects of the present invention:

[0021] By evenly arranging the first air holes on the air extraction plate and the air inlet plate and placing the substrate between the air extraction plate and the air inlet plate, the reaction area of ​​the substrate is evenly covered by the gas, thereby improving the uniformity of the deposited film layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 is a schematic diagram of a deposition processing apparatus of the present invention;

[0023] Figure 2 yes Figure 1 Enlarged view of point A in the middle;

[0024] Figure 3 is a side view of the chamber of the deposition processing device of the present invention;

[0025] Figure 4 Schematic diagram of an I-shaped gas distribution unit in a deposition processing device of the present invention;

[0026] Figure 5 Schematic diagram of an X-shaped gas distribution unit in a deposition processing apparatus of the present invention;

[0027] Figure 6 Schematic diagram of an X-shaped gas distribution unit when the three-stage gas distribution channel in the deposition processing device of the present invention is arc-shaped;

[0028] Figure 7A distribution diagram of the first air holes and the second air holes on the air inlet plate and the air extraction plate in the deposition processing device of the present invention;

[0029] Figure 8 is a second distribution diagram of the first air holes and the second air holes on the air inlet plate and the air extraction plate in the deposition processing device of the present invention;

[0030] Figure 9 This is a third distribution diagram of the first air holes and the second air holes on the air inlet plate and the air extraction plate in the deposition processing device of the present invention;

[0031] Figure 10 It is a cross-sectional view of a semi-flow channel on an exhaust plate or an air inlet plate in a deposition processing device of the present invention.

[0032] In the picture:

[0033] 1-first air hole; 2-second air hole; 3-exhaust plate; 4-air inlet plate; 5-base; 6-closure; 7-furnace body; 8-gas distribution channel; 81-first-level gas distribution channel; 82-second-level gas distribution channel; 83-third-level gas distribution channel; 9-semi-flow channel. DETAILED DESCRIPTION

[0034] The present invention will be further described in detail below with reference to the accompanying drawings and examples. It will be understood that the specific embodiments described herein are intended only to illustrate the present invention and are not intended to limit the present invention. It should also be noted that, for ease of description, the accompanying drawings only illustrate portions relevant to the present invention, not all structures.

[0035] In the description of the present invention, unless otherwise expressly specified or limited, the terms "connected," "connected," and "fixed" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integration; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention in specific circumstances.

[0036] In the present invention, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Furthermore, a first feature being "above," "above," and "above" a second feature may include the first feature being directly above or obliquely above the second feature, or may simply mean that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature may include the first feature being directly below or obliquely below the second feature, or may simply mean that the first feature is lower in level than the second feature.

[0037] In the description of this embodiment, terms such as "upper," "lower," "left," and "right" are used to refer to positions or locations based on those shown in the accompanying drawings. These terms are intended solely to facilitate description and simplify operation, and are not intended to indicate or imply that the devices or components referred to must have, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on the present invention. Furthermore, the terms "first" and "second" are used solely for descriptive purposes and have no special meaning.

[0038] like Figure 1-9 As shown, the present invention provides a deposition processing device, including a furnace body 7; the furnace body 7 is used to accommodate a substrate 5, and an air intake plate 4 is arranged in the furnace body 7; it also has an exhaust plate 3, and the exhaust plate 3 and the air intake plate 4 are arranged opposite to each other in the furnace body 7 so that the substrate 5 can be placed between the two; wherein: the air intake plate 4 and the exhaust plate 3 are provided with evenly arranged first air holes 1, second air holes 2 connected to external equipment, and an air distribution channel 8 connecting the first air holes 1 and the second air holes 2.

[0039] By evenly arranging the first air holes 1 on the air extraction plate 3 and the air inlet plate 4 and placing the substrate 5 between the air extraction plate 3 and the air inlet plate 4, the reaction area of ​​the substrate 5 is evenly covered by the gas, avoiding the occurrence of a reaction blind area.

[0040] The present invention is described in detail below. Figure 1 and 2As shown, a deposition processing device includes a furnace body 7. It should be noted that in this embodiment, the furnace body 7 is cylindrical and can accommodate multiple substrates 5 for deposition. The substrates 5 can be electrode plate arrays, graphite boats, etc. The furnace body 7 is made of stainless steel to increase the service life of the furnace body 7. In other embodiments, the furnace body 7 can be square and made of SiC, quartz, or other metal materials other than stainless steel. The specific size of the furnace body 7 can be pre-designed based on the size of the substrate. The furnace body 7 is provided with an air inlet plate 4 and an air extraction plate 3. The air extraction plate 3 is arranged opposite to the air inlet plate 4 so that the substrate 5 can be placed therebetween. The air inlet plate 4 and the air extraction plate 3 have evenly distributed first air holes 1. The air inlet plate 4 and the air extraction plate 3 also have second air holes 2. The second air holes 2 are connected to the first air holes 1 through an air distribution channel 8 to enable gas to flow between the first air holes 1 and the second air holes 2. It should be noted that in this embodiment, the second air holes 2 on the air inlet plate 4 are connected to an external air supply device, while the second air holes 2 on the air extraction plate 3 are connected to an air extraction device. Gas can then enter the furnace body 7 from the second air holes 2 on the air inlet plate 4 along the air distribution channel 8 from the first air holes 1 on the air inlet plate 4. Since the first air holes 1 are evenly distributed on the air inlet plate 4, the gas covers the entire base 5. Gas then passes through the first air holes 1 on the air extraction plate 3 and the air distribution channel 8 and is discharged from the second air holes 2 on the air extraction plate 3. Furthermore, the air extraction plate 3 and the air inlet plate 4 each include two mutually interlocking plate-like structures, each of which is provided with a semi-flow channel 9. The semi-flow channels 9 on the two plate-like structures are connected to form the air distribution channel 8 to facilitate the processing and forming of the air extraction plate 3 and the air inlet plate 4. In this embodiment, there is no requirement for the form of fastening. A fixed fastening method such as adhesive fastening or a detachable fastening method such as a snap fastener or bolts can also be used.

[0041] Specifically, the gas distribution channel 8 includes a primary gas distribution channel 81 and a secondary gas distribution channel 82. The second air pores 2 are connected to the primary gas distribution channel 81, the primary gas distribution channel 81 is connected to at least one secondary gas distribution channel 82, and the secondary gas distribution channel 82 is connected to multiple first air pores 1. Furthermore, the gas distribution channel 8 includes a tertiary gas distribution channel 83, and several first air pores 1 are connected through the tertiary gas distribution channel 83 to form a gas distribution unit. It is understandable that the density of the first air pores 1 on the air inlet plate 4 and the air extraction plate 3 can be designed in the early stage according to the deposition requirements, so that the gas distribution channels can be further increased, such as the fourth and fifth stages of gas distribution channels, so as to further increase the gas distribution units to increase the distribution density of the first air pores 1. In this embodiment, taking the third stage as an example, multiple gas distribution units are connected to the secondary gas distribution channel 82, and the path length from the connection point of the secondary gas distribution channel 82 and the tertiary gas distribution channel 83 in the gas distribution unit to the first air pore 1 in the gas distribution unit is equal to ensure that each first air pore 1 on the air inlet plate 4 and the air extraction plate 3 has the same gas flow rate. It should be noted that the air distribution unit can be formed as follows Figure 4In other embodiments, it can also be formed as Figure 5 The X-shaped shown in FIG. 8 can also be formed when the three-stage air distribution channel 83 adopts an arc channel. Figure 6 The air distribution units are evenly distributed on the air inlet plate 4 and the air extraction plate 3 and are connected to the second air holes 2. By repeatedly setting the air distribution units, the first air holes 1 can be evenly distributed on the air inlet plate 4 and the air extraction plate 3. Specifically, according to the size and shape of the specific air inlet plate 4 and the air extraction plate 3, the initial design can be as follows: Figure 7 、 8 9 . It should be noted that the arrangement of the air distribution unit array in this embodiment can be adjusted according to the size of the substrate 5. The arrangement can be formed into a square, parallelogram, rectangle, or other special shape based on the expansion of the air distribution unit. This ensures that the first air holes 1 are evenly distributed on the air inlet plate 4 and the air extraction plate 3 to cover the entire substrate 5, thereby achieving more uniform air distribution.

[0042] Furthermore, the diameters of the first air holes 1 and the second air holes 2 on the air extraction plate 3 are not smaller than the diameters of the first air holes 1 and the second air holes 2 on the air inlet plate 4. This prevents dust accumulation from clogging the second air holes 2 and the first air holes 1 on the air extraction plate 3, reducing the frequency of cleaning.

[0043] Furthermore, the air inlet plate 4 and / or the air extraction plate 3 are disposed on the inner cavity wall of the furnace body 7 to provide a mounting location for the air inlet plate 4 and the air extraction plate 3, and can be connected and fixed by bolts, screws, or other connecting members. It should be noted that in other embodiments, a closure member 6 is provided at the port of the furnace body 7, and the closure member 6 can be a fixed flange. An external pipe can be introduced into or extracted from the flange hole of the fixed flange. The ends of the air inlet plate 4 and / or the air extraction plate 3 are connected to the closure member 6 to support and fix the air inlet plate 4 and / or the air extraction plate 3.

[0044] In other embodiments, the air intake plate 4, the exhaust plate 3 and the inner cavity wall of the furnace body 7 can be integrally formed, for example, the upper wall of the furnace body 7 is the air intake plate 4, and the lower wall of the furnace body 7 is the exhaust plate 3, or they can be arranged opposite to each other on the left and right, front and back, which can save installation components and make the entire cavity more concise.

[0045] Obviously, the above embodiments of the present invention are merely examples for the purpose of clearly illustrating the present invention and are not intended to limit the embodiments of the present invention. A person skilled in the art would be able to make various obvious changes, readjustments, and substitutions without departing from the scope of protection of the present invention. It is not necessary and impossible to enumerate all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the claims of the present invention.

Claims

1. A deposition processing apparatus for plasma enhanced chemical vapor deposition, characterized in that: include: A furnace body (7), wherein the furnace body (7) is used to accommodate the substrate (5); an air intake plate (4), the air intake plate (4) being arranged in the furnace body (7); An air extraction plate (3), the air extraction plate (3) and the air inlet plate (4) are arranged relative to each other in the furnace body (7) so that the base (5) can be placed between the two; wherein: The air inlet plate (4) and the air extraction plate (3) are provided with uniformly arranged first air holes (1), second air holes (2) connected to external equipment, and air distribution channels (8) connected to the first air holes (1) and the second air holes (2), so that the reaction area of ​​the substrate (5) is uniformly covered by gas, thereby improving the uniformity of the deposited film layer; The air distribution channel (8) further comprises a primary air distribution channel (81) and a secondary air distribution channel (82), the second air hole (2) is connected to the primary air distribution channel (81), the primary air distribution channel (81) is connected to at least one secondary air distribution channel (82), and the secondary air distribution channel (82) is connected to a plurality of the first air holes (1); The air distribution channel (8) comprises a three-stage air distribution channel (83), a plurality of the first air holes (1) are connected via the three-stage air distribution channel (83) to form an air distribution unit, and a plurality of the air distribution units are in communication with the two-stage air distribution channel (82).

2. The deposition processing apparatus according to claim 1, wherein: The path lengths from the connection point between the secondary air distribution channel (82) and the tertiary air distribution channel (83) in the air distribution unit to the first air hole (1) in the air distribution unit are equal.

3. The deposition processing apparatus according to claim 1, wherein: The furnace body (7) has a closing piece (6) at the end thereof.

4. The deposition processing apparatus according to claim 3, wherein: The ends of the air intake plate (4) and / or the air extraction plate (3) are connected to the closing member (6) to support and fix the air intake plate (4) and / or the air extraction plate (3).

5. The deposition processing apparatus according to claim 1, wherein: The air inlet plate (4) and / or the air extraction plate (3) are arranged on the inner cavity wall of the furnace body (7).

6. The deposition processing apparatus according to claim 1, wherein: The air extraction plate (3) and the air intake plate (4) each comprise two mutually interlocking plate-like structures, each of the plate-like structures being provided with a semi-flow channel (9), and the semi-flow channels (9) on the two plate-like structures being butted together to form the air distribution channel (8).

7. The deposition processing apparatus according to claim 1, wherein: The diameters of the first air hole (1) and the second air hole (2) located on the air extraction plate (3) are not smaller than the diameters of the first air hole (1) and the second air hole (2) located on the air inlet plate (4).

8. The deposition processing apparatus according to claim 1, wherein: The furnace body (7) is cylindrical or square.

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